KR101131443B1 - Set-up apparatus for wire bonding system for manufacturing of semicondutor package - Google Patents

Set-up apparatus for wire bonding system for manufacturing of semicondutor package Download PDF

Info

Publication number
KR101131443B1
KR101131443B1 KR1020090032071A KR20090032071A KR101131443B1 KR 101131443 B1 KR101131443 B1 KR 101131443B1 KR 1020090032071 A KR1020090032071 A KR 1020090032071A KR 20090032071 A KR20090032071 A KR 20090032071A KR 101131443 B1 KR101131443 B1 KR 101131443B1
Authority
KR
South Korea
Prior art keywords
gas
copper wire
inert gas
ball
wire
Prior art date
Application number
KR1020090032071A
Other languages
Korean (ko)
Other versions
KR20100113669A (en
Inventor
양용석
나석호
차세웅
Original Assignee
앰코 테크놀로지 코리아 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 앰코 테크놀로지 코리아 주식회사 filed Critical 앰코 테크놀로지 코리아 주식회사
Priority to KR1020090032071A priority Critical patent/KR101131443B1/en
Publication of KR20100113669A publication Critical patent/KR20100113669A/en
Application granted granted Critical
Publication of KR101131443B1 publication Critical patent/KR101131443B1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48617—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
    • H01L2224/48624—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/78268—Discharge electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/789—Means for monitoring the connection process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85053—Bonding environment
    • H01L2224/85054—Composition of the atmosphere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85053—Bonding environment
    • H01L2224/85054—Composition of the atmosphere
    • H01L2224/85075—Composition of the atmosphere being inert
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01007—Nitrogen [N]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Abstract

본 발명은 반도체 패키지 제조용 와이어 본딩장치의 셋업장치에 관한 것으로서, 더욱 상세하게는 유색기체를 이용하여 와이어 본더 내에 불활성기체가 구리와이어의 볼을 충분히 감싸면서 분사되는지를 판단하기 위해 가시화하거나, 가스노즐의 위치에 따른 구리와이어의 볼 표면 온도를 측정하여 가스노즐을 최적위치에 셋팅함으로써, 구리와이어의 산화발생을 방지할 수 있을 뿐만 아니라, 와이어 본딩 장치의 셋업을 용이하게 할 수 있다.The present invention relates to a device for setting up a wire bonding apparatus for manufacturing a semiconductor package, and more particularly, to visualize to determine whether an inert gas is injected while sufficiently encapsulating a ball of copper wire in a wire bonder using a colored gas, or a gas nozzle. By measuring the ball surface temperature of the copper wire according to the position of and setting the gas nozzle to the optimum position, the oxidation of the copper wire can be prevented and the setup of the wire bonding device can be facilitated.

반도체, 패키지, 와이어, 본딩, 불활성기체, 볼, 가스노즐 Semiconductor, Package, Wire, Bonding, Inert Gas, Ball, Gas Nozzle

Description

반도체 패키지 제조용 와이어 본딩장치의 셋업장치{Set-up apparatus for wire bonding system for manufacturing of semicondutor package}Set-up apparatus for wire bonding system for manufacturing of semicondutor package}

본 발명은 반도체 패키지 제조용 와이어 본딩장치에 관한 것으로서, 더욱 상세하게는 와이어 본딩이 실질적으로 이루어지는 구성들의 위치를 최적화시키는 반도체 패키지 제조용 와이어 본딩장치의 셋업장치에 관한 것이다.The present invention relates to a wire bonding apparatus for manufacturing a semiconductor package, and more particularly, to a setup device for a wire bonding apparatus for manufacturing a semiconductor package for optimizing the positions of configurations in which wire bonding is substantially performed.

일반적으로 반도체 패키지는 해당 기판의 칩부착 영역에 반도체 칩을 접착수단으로 부착하는 공정과, 반도체 칩의 본딩패드와 기판의 본딩영역간을 전기적 신호 교환 가능하게 와이어로 본딩하는 공정과, 반도체 칩과 와이어 등을 감싸는 몰딩 공정 등을 필수적으로 거쳐 제조된다.In general, a semiconductor package includes a process of attaching a semiconductor chip to a chip attaching region of a corresponding substrate by an adhesive means, a process of bonding a semiconductor chip between a bonding pad of the semiconductor chip and a bonding region of the substrate with a wire to enable electrical signal exchange, and a semiconductor chip and a wire. It is manufactured through the molding process surrounding the back.

상기 와이어 본딩 공정에 있어서, 대개는 골드(gold) 와이어를 사용하지만 통전성이 우수하고 비용이 저렴한 구리 와이어를 이용하기도 한다.In the wire bonding process, gold wire is usually used, but copper wire having good electrical conductivity and low cost may be used.

대개, 와이어 본딩은 첨부한 도 4에서 보는 바와 같이, 캐필러리(capillary)라고 하는 기구를 이용하는 바, 이 캐필러리(10)는 상하방향을 따라 와이어의 공급 경로가 되는 미세한 직경의 관통홀이 형성된 구조로서, 그 끝단으로 구리 와이어(11)가 인출된다.Usually, wire bonding uses a mechanism called capillary, as shown in the accompanying FIG. 4, wherein the capillary 10 has a fine diameter through hole that serves as a wire supply path along the vertical direction. As this formed structure, the copper wire 11 is pulled out at the end thereof.

이러한 캐필러리(10)를 이용하는 와이어 본딩은 칩의 본딩패드에 행하는 볼 본딩(1차 본딩이라고도 함)과, 기판의 본딩영역에 행하는 스티치 본딩(2차 본딩이라고도 함)이 연속 구분 동작으로 실시된다.The wire bonding using the capillary 10 is performed by ball bonding (also referred to as primary bonding) to the bonding pad of the chip and stitch bonding (also referred to as secondary bonding) to the bonding region of the substrate in a continuous division operation. do.

보다 상세하게는, 볼 본딩은 캐필러리(10)의 끝단으로 인출된 구리 와이어(11)에 방전에 의하여 전기스파크를 가하며 볼 형태로 만들어주는 동시에 이 볼 형태의 와이어가 칩의 본딩패드에 본딩되고, 스티치 본딩(stitch)은 상기 캐필러리(10)가 기판의 본딩영역으로 이동하는 동시에 기판의 본딩영역에 구리 와이어(11)를 부착시키면서 끊어주는 동작으로 이루어진다.More specifically, the ball bonding applies an electric spark to the copper wire 11 drawn out to the end of the capillary 10 by electric discharge and makes it into a ball shape, and at the same time, the ball-shaped wire is bonded to the bonding pad of the chip. The stitch bonding is performed by the capillary 10 moving to the bonding region of the substrate and breaking while attaching the copper wire 11 to the bonding region of the substrate.

상기 구리 와이어 본딩용 캐필러리(10)의 일측에는 EFO(Electro Flame-Off) 완드(wand)(14)가 위치되어 있고, 상기 EFO 완드(14)에 높은 전압을 걸어주어 그 전압이 상기 캐필러리(10)의 하단에 노출된 구리 와이어(11)에 방전되게 함으로써, 구리 와이어(11)의 끝단이 녹으면서 볼 본딩을 위한 원형의 볼 형태가 만들어지는 것이다.An EFO (Electro Flame-Off) wand 14 is positioned at one side of the capillary 10 for copper wire bonding, and a high voltage is applied to the EFO wand 14 so that the voltage is applied to the capillary 10. By discharging to the copper wire 11 exposed to the lower end of the filler 10, the end of the copper wire 11 is melted to form a circular ball shape for ball bonding.

그러나, 상기 구리와이어(11) 본딩 시 캐필러리(10) 하단으로 노출된 구리 와이어(11)에 산화현상이 발생하고, 이는 다음과 같은 큰 문제를 야기한다.However, oxidation occurs in the copper wire 11 exposed to the lower end of the capillary 10 during the bonding of the copper wire 11, which causes a large problem as follows.

상기 산화된 구리는 알루미늄 본드패드와 같은 본드패드와의 금속간 결합을 형성하는데 방해를 하고, 구리의 경화도를 증가시켜 본딩시에 크레이터링(Cratering)과 같은 품질 문제를 유발할 가능성이 커지게 된다.The oxidized copper interferes with forming intermetallic bonds with bond pads, such as aluminum bond pads, and increases the degree of hardening of copper, which increases the likelihood of causing quality problems such as cratering during bonding.

이와 같은 문제점을 해결하기 위해 현재까지 구리와이어(11)의 산화를 최소화하기 위해 캐필러리를 통해 인출된 구리와이어(11)의 하단부에 불활성가스를 분사시켜 주는 불활성가스 가스노즐(14)이 제안되었다.In order to solve such a problem, an inert gas gas nozzle 14 for injecting an inert gas into the lower end of the copper wire 11 drawn out through the capillary to minimize oxidation of the copper wire 11 is proposed to date. It became.

상기 EFO 완드(14)의 반대쪽 위치에는 불활성가스 가스노즐(14)이 위치되어 있고, 상기 불활성가스 가스노즐(14)는 구리 와이어(11)의 끝단을 향하여 질소 또는 포밍가스(질소에 수소가 5%정도 포함된 것)를 분사/공급해주는 역할을 하는 바, 캐필러리(10) 하단으로 노출된 구리 와이어(11)의 산화 현상이 상기 분사된 불활성가스(3)에 의하여 용이하게 방지된다.An inert gas gas nozzle 14 is positioned at an opposite side of the EFO wand 14, and the inert gas gas nozzle 14 has nitrogen or forming gas (5 hydrogen in nitrogen toward the end of the copper wire 11). Bar included), the oxidation phenomenon of the copper wire 11 exposed to the lower end of the capillary 10 is easily prevented by the injected inert gas (3).

즉, 상기 불활성가스(3)가 볼본딩을 위해 볼을 형성하는 구리 와이어(11)의 끝단부에 분사되어 일종의 차폐막 역할을 하게 되므로, 구리 와이어(11)는 외부공기와 차단된 상태가 되어 산화 방지가 되는 것이다.That is, since the inert gas (3) is injected to the end of the copper wire 11 forming the ball for ball bonding to serve as a kind of shielding film, the copper wire 11 is blocked from the external air and oxidized It is prevented.

그러나, 상기 불활성가스는 무색이므로 불활성 가스가 구리와이어에 형성된 볼을 충분히 감싸고 있는지 확인할 수 없고, 상기 불활성가스 분사노즐이 사용자가 원하는 위치에 정확히 위치되어 불활성가스가 구리와이어의 볼을 감싸고 있는지도 확인하기가 어렵다.However, since the inert gas is colorless, it is impossible to check whether the inert gas is sufficiently enclosed in the ball formed on the copper wire, and the inert gas injection nozzle is correctly positioned at a desired position to check whether the inert gas is enclosed in the ball of the copper wire. Is difficult.

따라서, 종래에는 상기 와이어 본딩을 위한 셋업시 캐필러리에서 인출된 구리와이어에 전기스파크를 가하여 볼(FAB;Free Air Ball)을 만듦과 동시에 가스노즐을 통해 불활성기체를 분사시킨 후, 볼의 일부(샘플)를 채취하여 현미경(microscope)을 통해 별도로 볼의 산화발생여부를 확인하는 작업을 반복적으로 실시하였으나, 산화가 발생하지 않을 때까지 분사노즐의 최적 위치를 찾아야 하는 번거로움이 있었다.Therefore, in the related art, an electric spark is applied to the copper wire drawn out of the capillary during the setup for wire bonding to make a ball (FAB; Free Air Ball), and at the same time, spraying an inert gas through a gas nozzle, (Sample) was repeatedly performed to check whether the ball was oxidized separately through a microscope, but it was troublesome to find the optimum position of the injection nozzle until the oxidation did not occur.

본 발명은 상기와 같은 점을 감안하여 안출한 것으로서, 유색기체를 이용하여 와이어 본더 내에 불활성기체가 구리와이어의 볼을 충분히 감싸면서 분사되는지를 판단하기 위해 가시화하거나, 가스노즐의 위치에 따른 구리와이어의 볼 표면 온도를 측정하여 가스노즐을 최적위치에 셋팅할 수 있는 반도체 패키지 제조용 와이어 본딩장치의 셋업장치를 제공하는데 그 목적이 있다.The present invention has been made in view of the above, and visualized to determine whether the inert gas is injected while fully wrapping the ball of the copper wire using a colored gas, or copper wire according to the position of the gas nozzle It is an object of the present invention to provide a device for setting up a wire bonding apparatus for manufacturing a semiconductor package that can set a gas nozzle at an optimal position by measuring a ball surface temperature of a.

상기한 목적은 구리와이어를 공급하기 위해 내부에 관통홀이 형성된 캐필러리; 상기 캐필러리를 통해 인출된 구리와이어에 전기스파크를 가하여 볼을 만들어주는 EFO 완드; 상기 캐필러리를 통해 인출된 구리와이어의 하단부에 구리와이어의 산화방지를 위해 불활성 기체를 분사시키는 가스노즐; 및 와이어 본딩 장치의 셋업시 상기 가스노즐의 내부에 유색기체를 흘려보내 불활성 기체의 유동을 가시화하는 불활성 기체의 유동가시화 수단을 포함하는 것을 특징으로 하는 반도체 패키지 제조용 와이어 본딩장치의 셋업장치에 의해 달성된다.
본 발명에 따른 상기 불활성 기체의 유동가시화 수단은: 상기 가스노즐에 불활성기체를 공급하는 관로에 설치되는 제1연결관과, 상기 제1연결관에서 분기되는 제2연결관을 포함하는 피팅관; 제2연결관에 설치된 3방향 개폐밸브 및 압력계; 상기 제2연결관과 연결되고, 유색기체가 저장된 제2저장탱크; 를 포함하는 것을 특징으로 한다.
바람직하게는, 상기 유색기체는 갈색을 나타내도록 이산화탄소에 소량의 이산화질소가 혼합된 가스 또는 흰색의 드라이 아이스 냉동 가스인 것을 특징으로 한다.The above object is a capillary formed with a through hole therein for supplying a copper wire; An EFO wand for making balls by applying an electric spark to the copper wire drawn out through the capillary; A gas nozzle for injecting an inert gas to prevent oxidation of the copper wire at the lower end of the copper wire drawn out through the capillary; And flow visualizing means of inert gas for visualizing the flow of inert gas by flowing colored gas into the gas nozzle during setup of the wire bonding apparatus. do.
The flow visualization means of the inert gas according to the present invention includes: a fitting pipe including a first connecting pipe installed in a conduit for supplying an inert gas to the gas nozzle and a second connecting pipe branched from the first connecting pipe; A three-way shutoff valve and a pressure gauge installed in the second connecting pipe; A second storage tank connected to the second connecting pipe and storing colored gas; Characterized in that it comprises a.
Preferably, the colored gas is characterized in that the gas is mixed with a small amount of nitrogen dioxide in a carbon dioxide or white dry ice frozen gas to have a brown color.

또한 상기한 목적은 구리와이어를 공급하기 위해 내부에 관통홀이 형성된 캐필러리; 상기 캐필러리를 통해 인출된 구리와이어에 방전으로 전기스파크를 가하여 볼을 만들어주는 EFO 완드; 상기 캐필러리를 통해 인출된 구리와이어의 하단부에 구리와이어의 산화방지를 위해 불활성 기체를 분사시키는 가스노즐; 및 상기 캐필 러리를 통해 인출된 구리와이어의 볼 온도를 측정하는 온도측정수단을 포함하여 구성되고, 와이어 본딩 장치의 셋업시 상기 가스노즐의 위치를 변화시키는 동시에 온도측정수단으로부터 볼의 시간에 따른 온도변화율을 감지하여, 이 온도변화율의 기울기가 가장 급할때 가스노즐를 찾아내는 것을 특징으로 하는 반도체 패키지 제조용 와이어 본딩장치의 셋업장치에 의해 달성된다.In addition, the above object is a capillary formed with a through hole therein for supplying a copper wire; An EFO wand for producing balls by applying an electric spark to the discharged copper wire through the capillary; A gas nozzle for injecting an inert gas to prevent oxidation of the copper wire at the lower end of the copper wire drawn out through the capillary; And a temperature measuring means for measuring the ball temperature of the copper wire drawn out through the capillary, and changing the position of the gas nozzle at the time of setting up a wire bonding device and at the same time the temperature of the ball from the temperature measuring means. It is achieved by the setup device of the wire bonding apparatus for manufacturing a semiconductor package which detects the rate of change and finds the gas nozzle when the slope of the temperature change rate is the steepest.

이에 따라 본 발명에 따른 반도체 패키지 제조용 와이어 본딩장치의 셋업장치에 의하면, 셋업시 유색기체를 가스노즐에 공급하여 불활성기체를 착색시킴으로써, 불활성기체의 유동을 가시화하여 불활성기체가 구리와이어의 볼을 충분히 감싸고 있는 지를 확인할 수 있다.Accordingly, according to the setup apparatus of the wire bonding apparatus for manufacturing a semiconductor package according to the present invention, by supplying a colored gas to the gas nozzle during coloring and coloring the inert gas, the flow of the inert gas is visualized so that the inert gas is sufficiently filled with balls of copper wire. You can check whether you are wrapping.

또한, 방전에 의해 형성된 구리와이어의 볼 표면온도가 가스노즐의 위치에 따라 최소가 될 때 가스노즐의 위치가 최적위치이므로, 이 최적위치에 가스노즐을 셋팅함으로써, 구리와이어의 산화발생을 방지할 수 있을 뿐만 아니라, 종래와 같이 현미경을 통한 볼의 표면검사를 하지 않아도 되므로, 와이어 본딩을 위한 셋업 작업을 보다 용이하게 할 수 있다.In addition, since the position of the gas nozzle is the optimum position when the ball surface temperature of the copper wire formed by the discharge becomes minimum according to the position of the gas nozzle, the oxidation of the copper wire can be prevented by setting the gas nozzle at this optimum position. In addition, since it is not necessary to inspect the surface of the ball through the microscope as in the prior art, it is easier to set up for wire bonding.

이하, 본 발명의 바람직한 실시예를 첨부도면을 참조로 상세하게 설명한다.Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

와이어 본딩은 반도체 패키지 제조 공정 중 반도체 칩의 본딩패드와 기판의 본딩영역 사이에 전기적 신호를 서로 교환할 수 있게 와이어로 본딩하여 연결하는 공정이다.Wire bonding is a process of bonding and connecting electrical wires between the bonding pads of the semiconductor chip and the bonding area of the substrate to exchange electrical signals.

첨부한 도 1은 본 발명의 일실시예에 따른 반도체 패키지 제조용 와이어 본딩장치의 셋업장치의 구성도이다. 1 is a block diagram of a setup apparatus of a wire bonding apparatus for manufacturing a semiconductor package according to an exemplary embodiment of the present invention.

본 발명의 제1실시예에 따른 반도체 패키지 제조용 와이어 본딩장치는 캐필러리(10), EFO 완드(13), 가스 노즐(14)을 포함한다. 상기 캐필러리(10)는 칩의 본딩패드에 행하는 볼본딩과, 기판의 본딩영역에 행하는 스티치 본딩이 연속 구분 동작으로 실시되는 와이어 본딩에서 상하, 전후, 좌우방향, 즉 3차원적으로 이동한다.The wire bonding apparatus for manufacturing a semiconductor package according to the first embodiment of the present invention includes a capillary 10, an EFO wand 13, and a gas nozzle 14. The capillary 10 moves up, down, front, back, left, and right in three dimensions in ball bonding in which ball bonding is performed on a bonding pad of a chip and stitch bonding in a bonding area of a substrate is performed in a continuous division operation. .

와이어를 공급하기 위해 상기 캐필러리(10)의 내부에는 관통홀이 형성되어 있고, 관통홀 위쪽으로 클램프(12)가 설치되며, 상기 클램프(12)는 관통홀을 통해 수직방향으로 인출되는 와이어를 잡아주는 역할을 한다.A through hole is formed in the capillary 10 to supply a wire, and a clamp 12 is installed above the through hole, and the clamp 12 is drawn out in a vertical direction through the through hole. It serves to hold.

상기 EFO 완드(13)는 캐필러리(10)의 하단부 일측에 대략 수평방향으로 배치되고, 상기 EFO 완드(13)에 높은 전압을 걸어 주어 그 전압이 캐필러리(10)의 하단에 인출된 구리와이어(11)에 방전되게 함으로써, 구리와이어(11)의 끝단이 녹으면서 볼 본딩을 위한 볼(22) 형태가 만들어진다.The EFO wand 13 is disposed in a substantially horizontal direction on one side of the lower end of the capillary 10, and a high voltage is applied to the EFO wand 13 so that the voltage is drawn out at the lower end of the capillary 10. By discharging to the copper wire 11, the end of the copper wire 11 is melted to form a ball 22 for ball bonding.

상기 가스 노즐(14)은 캐필러리(10)를 통해 인출된 구리와이어(11)가 주변공기와의 접촉으로 산화되는 것을 방지하기 위해 불활성기체, 예를 들어 질소 또는 포밍가스(질소에 수소가 5% 정도 포함된 것)를 상기 구리와이어(11)의 하단부로 분사 또는 공급한다.The gas nozzle 14 has an inert gas such as nitrogen or forming gas (hydrogen in nitrogen) to prevent the copper wire 11 drawn out through the capillary 10 from being oxidized by contact with surrounding air. 5% or less) is injected or supplied to the lower end of the copper wire (11).

이때, 상기 불활성기체가 볼본딩을 위해 볼(22)을 형성하는 구리와이어(11)의 끝단부에 분사되어 일종의 차폐막 역할을 하게 되므로, 구리와이어(11)는 외부공기와 차단된 상태가 되어 산화가 방지되는 것이다.At this time, the inert gas is injected to the end of the copper wire 11 forming the ball 22 for ball bonding to serve as a kind of shielding film, the copper wire 11 is blocked by the external air and oxidized Will be avoided.

상기 가스노즐(14)의 전단부에는 분사를 위한 노즐부가 형성되어, 이 노즐부를 통해 불활성기체가 분사되고, 가스노즐(14)의 후단부에 불활성기체를 공급하기 위한 연결호스가 연결되며, 상기 연결호스는 불활성기체를 저장하고 있는 제1저장탱크(15)와 연결된다. 따라서, 상기 제1저장탱크(15)에 저장된 불활성기체는 연결호스를 거쳐 가스노즐(14)을 통해 구리와이어(11)의 하단부에 불활성기체가 분사된다.A nozzle part for injection is formed at the front end of the gas nozzle 14, an inert gas is injected through the nozzle part, and a connection hose for supplying an inert gas to the rear end of the gas nozzle 14 is connected. The connection hose is connected to the first storage tank 15 which stores the inert gas. Therefore, the inert gas stored in the first storage tank 15 is injected to the lower end of the copper wire 11 through the gas nozzle 14 through the connection hose.

여기서, 본 발명에 따른 일실시예는 불활성 기체의 유동가시화 수단을 이용하여 가스노즐(14)에 유색기체를 유입시켜 불활성기체를 착색함으로써, 가스노즐(14)을 통해 분사되는 불활성기체의 유동을 가시화 하여 불활성기체가 구리와이어(11)의 하단부를 완벽하게 감싸고 있는지를 확인할 수 있다.Here, one embodiment according to the present invention by using the flow visualization means of the inert gas to color the inert gas by introducing a colored gas into the gas nozzle 14, thereby preventing the flow of the inert gas injected through the gas nozzle 14 Visualization can be confirmed whether the inert gas completely wraps the lower end of the copper wire (11).

상기 유색기체는 이산화탄소에 소량의 이산화질소를 포함한 엷은 갈색의 혼합기체 또는 흰색의 드라이 아이스 냉동가스 중 선택하여 사용할 수 있다. The colored gas may be selected from pale brown mixed gas containing a small amount of nitrogen dioxide in carbon dioxide or white dry ice frozen gas.

상기 불활성 기체의 유동가시화 수단의 일 구성으로서, 제1저장탱크(15)와 가스노즐(14) 사이를 연결하는 연결호스에 3방향의 피팅관(16)가 설치된다. 상기 피팅관(16)은 제1저장탱크(15)와 가스노즐(14)을 연결하여 불활성기체를 공급하는 제1연결관(17)과, 상기 제1연결관(17)과 연결하여 유색기체를 공급하는 제2연결관(18)을 포함한다.As one configuration of the flow visualization means of the inert gas, a fitting pipe 16 in three directions is provided at a connection hose connecting the first storage tank 15 and the gas nozzle 14. The fitting pipe 16 is connected to the first storage tank 15 and the gas nozzle 14, the first connecting pipe 17 for supplying the inert gas, and the first connecting pipe 17 is connected to the colored gas It includes a second connecting pipe 18 for supplying.

상기 제2연결관(18)에는 관로를 개폐하고 관로의 유량을 제어하기 위해 3방 향 개폐밸브(19)가 설치되고, 제2연결관(18)은 유색기체를 저장하고 있는 제2저장탱크(20)와 연결된다. 또한, 상기 제2연결관(18)에는 압력계(23)가 설치되며, 이 압력계(23)에 의해 제2연결관(18)으로 흐르는 유색기체의 흐름 압력을 확인할 수 있다.The second connecting pipe 18 is provided with a three-way opening and closing valve 19 to open and close the pipe and to control the flow rate of the pipe, the second connecting pipe 18 is a second storage tank for storing the colored gas It is connected with 20. In addition, a pressure gauge 23 is installed in the second connection pipe 18, and the pressure of the colored gas flowing into the second connection pipe 18 can be confirmed by the pressure gauge 23.

여기서, 실제 공정 전에 캐필러리(10)의 높이, 구리와이어(11)의 테일(tail) 길이, EFO 완드(13) 및 가스노즐(14)의 위치 등의 셋업 작업시, 상기 제1연결관(17)을 통해 불활성 기체는 항상 가스노즐(14)로 공급되고, 동시에 유색기체도 가스노즐(14)에 공급되어 불활성 기체를 착색시킨다.Here, before the actual process, the first connecting pipe during the setup work such as the height of the capillary 10, the tail length of the copper wire 11, the position of the EFO wand 13 and the gas nozzle 14, etc. Through 17, an inert gas is always supplied to the gas nozzle 14, and at the same time, a colored gas is also supplied to the gas nozzle 14 to color the inert gas.

상기와 같은 구성에 의해, 본 발명의 제1실시예에 따른 반도체 패키지 제조용 와이어 본딩장치의 셋업장치의 작동상태를 설명하면 다음과 같다.The operation of the setup apparatus of the wire bonding apparatus for manufacturing a semiconductor package according to the first embodiment of the present invention is explained as follows.

본 발명의 일실시예에 따라 상기 캐필러리(10)는 대략 수직방향으로 일정한 높이에 배치되고, EFO 완드(13)는 캐필러리(10)의 하부에 대략 수평방향으로 배치되고, 가스노즐(14)은 EFO 완드(13)의 반대쪽에 수평방향으로 배치된다.According to one embodiment of the present invention, the capillary 10 is disposed at a constant height in a substantially vertical direction, and the EFO wand 13 is disposed in a substantially horizontal direction in a lower portion of the capillary 10, and a gas nozzle 14 is disposed in the horizontal direction opposite the EFO wand 13.

그 다음, 캐필러리(10)를 통해 와이어를 일정 길이만큼 인출시키고, EFP 완드(13)에 높은 전압을 걸고 그 전압에 의해 와이어의 하단부로 방전을 일으켜 와이어를 녹이면서 볼(22) 형태로 만든다. Then, withdraw the wire by a certain length through the capillary 10, apply a high voltage to the EFP wand 13 to generate a discharge to the lower end of the wire by the voltage to melt the wire in the form of balls 22 Make.

동시에, 가스노즐(14)을 통해 불활성기체를 분사시킨다. 이때, 3방향 개폐밸브(19)를 열어 유색기체를 제2연결관(18)에 공급하여 제1연결관(17)을 흐르는 불활성 기체에 합류하게 한다. 상기 유색기체는 불활성 기체에 혼합되어 불활성 기체를 착색시킨다. At the same time, inert gas is injected through the gas nozzle 14. At this time, the three-way opening and closing valve 19 is opened to supply the colored gas to the second connecting pipe 18 to join the inert gas flowing through the first connecting pipe 17. The colored gas is mixed with an inert gas to color the inert gas.

상기 유색기체에 의해 착색된 불활성 기체는 구리와이어(11)의 하단부, 즉 볼(22)이 형성된 부위로 향하여 분사된다. The inert gas colored by the colored gas is injected toward the lower end of the copper wire 11, that is, the area where the ball 22 is formed.

그러나, 상기 가스노즐(14)의 축선이 수평선을 기준으로 상하,전후,좌우방향으로 비틀어진 경우 또는 구리와이어(11)의 볼(22) 중심부를 향하지 않을 경우 상기 불활성 기체가 와이어의 볼(22) 중심부에서 한쪽으로 치우치게 분사될 것이다.However, when the axis of the gas nozzle 14 is twisted in the up, down, back, left and right directions with respect to the horizontal line, or does not face the center of the ball 22 of the copper wire 11, the inert gas is the ball 22 of the wire. ) Will be sprayed to one side from the center.

여기서, 상기 불활성 기체는 유색기체에 의해 착색된 상태이므로, 상기와 같이 한쪽으로 치우치게 분사되는 불활성 기체를 육안으로 확인할 수 있고, 가스노즐(14)의 위치가 원하는 위치가 아닐 경우에 바로 가스노즐(14)을 정위치, 즉 가스노즐(14)의 축선과 와이어의 볼(22) 중심부를 일직선상에 위치하도록 수정한다.Here, since the inert gas is colored by colored gas, it is possible to visually check the inert gas injected to one side as described above, and when the position of the gas nozzle 14 is not a desired position, the gas nozzle ( 14) is corrected so that the axis line of the gas nozzle 14 and the center of the ball 22 of the wire are located in a straight line.

상기 3방향 개폐밸브(19)는 반도체 패키지 제조공정을 실시하기 전에 가스노즐(14)의 위치 셋업시에만 열림상태로 되고, 그 외에는 닫힘상태로 됨으로써, 실제 와이어 본딩 공정 중에는 유색기체의 공급이 차단되어 유색기체에 의한 기판 등의 오염을 방지할 수 있다.The three-way valve 19 is opened only when the gas nozzle 14 is set in position before the semiconductor package manufacturing process is performed. Otherwise, the three-way open / close valve 19 is closed so that the supply of colored gas is blocked during the actual wire bonding process. As a result, contamination of the substrate and the like by colored gas can be prevented.

첨부한 도 2는 본 발명의 다른 실시예에 따른 반도체 패키지 제조용 와이어 본딩장치의 셋업장치의 구성도이다.2 is a block diagram of a setup apparatus of a wire bonding apparatus for manufacturing a semiconductor package according to another exemplary embodiment of the present invention.

본 발명의 제2실시예에 따른 반도체 패키지 제조용 와이어 본딩장치는 제1실시예와 같이 캐필러리(10), EFO 완드(13), 가스노즐(14)을 포함한다. 이들의 구성 및 작용은 제1실시예와 동일하므로 생략한다.The wire bonding apparatus for manufacturing a semiconductor package according to the second embodiment of the present invention includes a capillary 10, an EFO wand 13, and a gas nozzle 14 as in the first embodiment. Their configuration and operation are the same as in the first embodiment and thus will be omitted.

본 발명의 제2실시예는 구리와이어(11)의 온도변화율을 이용하여 가스노즐(14)의 최적 위치를 찾아 불활성 기체로 구리와이어(11)의 주변공기를 차단함으 로써, 구리와이어(11)의 산화를 방지한다.According to the second embodiment of the present invention, the optimum position of the gas nozzle 14 is found by using the temperature change rate of the copper wire 11, and thus the ambient air of the copper wire 11 is blocked by an inert gas, thereby the copper wire 11 is removed. To prevent oxidation.

가스노즐(14)을 통해 분사되는 불활성 기체는 일반적으로 EFO 완드(13)의 전기스파크가 가해진 구리와이어(11)의 볼(22) 온도보다 상대적으로 낮기 때문에 불활성 기체가 구리와이어(11)에 분사되면 순간적으로 구리와이어(11)의 온도가 낮아지게 된다.The inert gas injected through the gas nozzle 14 is generally lower than the ball 22 temperature of the copper wire 11 to which the electric spark of the EFO wand 13 is applied, so that the inert gas is injected into the copper wire 11. When the temperature of the copper wire 11 is lowered instantaneously.

상기 구리와이어(11)가 불활성 기체에 의해 온도가 감소하는 원리를 이용하여 가스노즐(14)가 최적위치에 있는지를 확인한다. 즉, 불활성 기체가 구리와이어(11)의 볼(22)을 최대한 감싸고 있을 때 볼(22)의 온도가 최소가 되기 때문에 시간에 따른 볼의 온도감소율의 기울기가 가장 급할 때 가스노즐(14)의 최적위치가 된다. Using the principle that the copper wire 11 is reduced in temperature by an inert gas, it is checked whether the gas nozzle 14 is in the optimum position. That is, since the temperature of the ball 22 becomes the minimum when the inert gas surrounds the ball 22 of the copper wire 11 as much as possible, the slope of the temperature decrease rate of the ball with time is highest. It is the best position.

통상적으로 가스노즐(14)에서 분사되는 불활성 기체는 가스노즐(14)과 동일축선상에서 밀도가 가장 높기 때문에, 가스노즐(14)의 축선이 구리와이어(11)의 볼(22) 중심부와 일직선상에 위치할 때 가스노즐(14)의 최적위치가 된다.In general, since the inert gas injected from the gas nozzle 14 has the highest density on the same axis as the gas nozzle 14, the axis of the gas nozzle 14 is in line with the center of the ball 22 of the copper wire 11. In this case, the optimum position of the gas nozzle 14 is achieved.

따라서, 상기 구리와이어(11)의 볼(22) 표면 온도를 측정하고, 가스노즐(14)의 위치에 따른 볼(22) 표면 온도의 순간변화율을 측정하여 가스노즐(14)의 최적위치를 찾아낸다. 상기 볼(22) 표면 온도를 측정하기 위한 온도측정수단은 당업자에게 특별히 제한되지 않고 선택될 수 있으나, 본 발명의 일실시예는 레이저를 이용한 미세온도측정장치(21)를 사용하여 구리와이어(11)의 볼(22) 표면에 인접하게 설치하고, 특히 셋업시에만 사용할 수 있도록 이동가능한 온도측정기구(21)를 사용하는 것이 바람직하다.Therefore, by measuring the surface temperature of the ball 22 of the copper wire 11, and by measuring the rate of instantaneous change of the surface temperature of the ball 22 according to the position of the gas nozzle 14 to find the optimum position of the gas nozzle (14) Serve Temperature measuring means for measuring the surface temperature of the ball 22 may be selected without particular limitation to those skilled in the art, one embodiment of the present invention is a copper wire 11 using a micro-temperature measuring device 21 using a laser It is preferable to use a temperature measuring instrument 21 which is installed adjacent to the surface of the ball 22 of the crankcase and which is movable in particular so that it can be used only during setup.

도 3은 시간에 따른 볼의 온도변화율을 비교하여 설명하는 그래프이다. 3 is a graph illustrating a comparison of the temperature change rate of the ball with time.

상기 EFO 완드(13)의 전기스파크에 의해 구리와이어(11)의 볼(22)의 초기 표면온도가 최고온도로 되고, 불활성 기체에 의해 볼(22)의 표면온도가 점점 감소한다. By the electric spark of the EFO wand 13, the initial surface temperature of the ball 22 of the copper wire 11 becomes the maximum temperature, and the surface temperature of the ball 22 gradually decreases due to the inert gas.

그러나, 상기 볼(22)의 표면온도에서 최소가 되는 점이 차이가 나지 않는다면, 적어도 가스노즐(14)의 유동속도가 동일한 것으로 가정할 때 가스노즐(14)의 위치를 변화시키면서 볼(22)의 표면온도를 측정한다. 이때, 상기 가스노즐(14)의 위치에 따라 볼(22)의 표면온도가 감소하는 비율, 즉 시간에 대한 볼(22)의 온도변화율의 기울기가 가장 급할 때 가스노즐(14)이 최적 위치에 있게 된다.However, if there is no difference in the minimum point in the surface temperature of the ball 22, at least assuming that the flow velocity of the gas nozzle 14 is the same, while changing the position of the gas nozzle 14 of the ball 22 Measure the surface temperature. At this time, the gas nozzle 14 is positioned at the optimum position when the surface temperature of the ball 22 decreases according to the position of the gas nozzle 14, that is, the slope of the temperature change rate of the ball 22 with respect to time is the steepest. Will be.

도 3에 도시한 바와 같이 볼(22)의 초기 표면온도(T1)에서 나중 온도(T2)로 떨어질때 최소시간(t3)이 걸리는 ③의 기울기를 갖는 가스노즐(14)의 위치로 셋팅한다.As shown in FIG. 3, the gas nozzle 14 is set to the position of the gas nozzle 14 having the inclination of 3 which takes the minimum time t3 when it falls from the initial surface temperature T1 of the ball 22 to the later temperature T2.

이와 같이 시간에 대한 볼(22)의 온도변화율의 기울기가 가장 급한 위치를 가스노즐(14)의 최적위치로 정하여 정확하게 셋팅함으로써, 기존에 별도로 현미경을 통해 볼(22)의 표면을 검사해야 하는 번거로움을 제거하면서 구리와이어 본딩의 품질 신뢰도를 높일 수 있다.In this way, by setting the position where the slope of the temperature change rate of the ball 22 with respect to time is the most urgent as the optimum position of the gas nozzle 14, it is a hassle to inspect the surface of the ball 22 through a microscope separately. It can improve the quality reliability of copper wire bonding while eliminating the draw.

도 1은 본 발명의 일실시예에 따른 반도체 패키지 제조용 와이어 본딩장치의 셋업장치를 위한 구성도이고,1 is a configuration diagram for a setup apparatus of a wire bonding apparatus for manufacturing a semiconductor package according to an embodiment of the present invention;

도 2는 본 발명의 다른 실시예에 따른 반도체 패키지 제조용 와이어 본딩장치의 셋업장치를 위한 구성도이고,2 is a configuration diagram for a setup apparatus of a wire bonding apparatus for manufacturing a semiconductor package according to another embodiment of the present invention;

도 3은 도 2에서 가스노즐의 위치에 따른 시간에 대한 볼의 온도변화율을 비교설명하는 그래프이고,3 is a graph illustrating a comparison rate of the temperature change of the ball with respect to time according to the position of the gas nozzle in FIG.

도 4는 종래의 반도체 패키지 제조용 와이어 본딩장치의 구성도이다.4 is a block diagram of a wire bonding apparatus for manufacturing a conventional semiconductor package.

<도면의 주요부분에 대한 부호의 설명><Description of the symbols for the main parts of the drawings>

10 : 캐필러리 11 : 구리와이어10 capillary 11: copper wire

12 : 클램프 13 : EFO 완드12: Clamp 13: EFO Wand

14 : 가스노즐 15 : 제1저장탱크14 gas nozzle 15 first storage tank

16 : 피팅관 17 : 제1연결관16: fitting pipe 17: the first connecting pipe

18 : 제2연결관 19 : 3방향 개폐밸브18: second connector 19: three-way open valve

20 : 제2저장탱크 21 : 온도측정기구20: second storage tank 21: temperature measuring instrument

22 : 볼 23 : 압력계22: ball 23: pressure gauge

Claims (5)

반도체 패키지 제조용 와이어 본딩장치의 셋업장치에 있어서,In the setup apparatus of the wire bonding apparatus for semiconductor package manufacture, 구리와이어를 공급하기 위해 내부에 관통홀이 형성된 캐필러리(10);A capillary 10 having a through hole formed therein for supplying copper wires; 상기 캐필러리(10)를 통해 인출된 구리와이어에 방전으로 전기스파크를 가하여 볼(22)을 만들어주는 EFO 완드(13);An EFO wand (13) for applying an electric spark to the copper wire drawn out through the capillary (10) to make a ball (22); 상기 캐필러리(10)를 통해 인출된 구리와이어의 하단부에 구리와이어의 산화방지를 위해 불활성 기체를 분사시키는 가스노즐(14); 및A gas nozzle 14 for injecting an inert gas to prevent oxidation of the copper wire at the lower end of the copper wire drawn out through the capillary 10; And 와이어 본딩 장치의 셋업시 상기 가스노즐(14)의 내부에 유색기체를 흘려보내 불활성 기체의 유동을 가시화하는 불활성 기체의 유동가시화 수단;Flow visualization means for inert gas for visualizing a flow of inert gas by flowing colored gas into the gas nozzle (14) when the wire bonding device is set up; 을 포함하는 것을 특징으로 하는 반도체 패키지 제조용 와이어 본딩장치의 셋업장치.Setup device for a wire bonding device for manufacturing a semiconductor package comprising a. 청구항 1에 있어서, 상기 불활성 기체의 유동가시화 수단은:The flow visualization means of claim 1, wherein 상기 가스노즐에 불활성기체를 공급하는 관로에 설치되는 제1연결관(17)과, 상기 제1연결관(17)에서 분기되는 제2연결관(18)을 포함하는 피팅관(16);A fitting pipe 16 including a first connecting pipe 17 installed in a pipe for supplying an inert gas to the gas nozzle, and a second connecting pipe 18 branched from the first connecting pipe 17; 상기 제2연결관(18)에 설치된 3방향 개폐밸브(19) 및 압력계(23);A three-way open / close valve 19 and a pressure gauge 23 installed in the second connecting pipe 18; 상기 제2연결관(18)과 연결되고, 유색기체가 저장된 제2저장탱크(20);A second storage tank 20 connected to the second connecting pipe 18 and storing colored gas; 를 포함하는 것을 특징으로 하는 반도체 패키지 제조용 와이어 본딩장치의 셋업장치.Setup device for a wire bonding device for manufacturing a semiconductor package comprising a. 청구항 1에 있어서, 상기 유색기체는 갈색을 나타내도록 이산화탄소에 소량의 이산화질소가 혼합된 가스 또는 흰색의 드라이 아이스 냉동 가스인 것을 특징으로 하는 반도체 패키지 제조용 와이어 본딩장치의 셋업장치.The apparatus of claim 1, wherein the colored gas is a gas in which a small amount of nitrogen dioxide is mixed with carbon dioxide or a white dry ice refrigeration gas to produce a brown color. 삭제delete 삭제delete
KR1020090032071A 2009-04-14 2009-04-14 Set-up apparatus for wire bonding system for manufacturing of semicondutor package KR101131443B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020090032071A KR101131443B1 (en) 2009-04-14 2009-04-14 Set-up apparatus for wire bonding system for manufacturing of semicondutor package

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020090032071A KR101131443B1 (en) 2009-04-14 2009-04-14 Set-up apparatus for wire bonding system for manufacturing of semicondutor package

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020110015380A Division KR101131449B1 (en) 2011-02-22 2011-02-22 Set-up apparatus for wire bonding system for manufacturing of semicondutor package

Publications (2)

Publication Number Publication Date
KR20100113669A KR20100113669A (en) 2010-10-22
KR101131443B1 true KR101131443B1 (en) 2012-03-29

Family

ID=43133078

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020090032071A KR101131443B1 (en) 2009-04-14 2009-04-14 Set-up apparatus for wire bonding system for manufacturing of semicondutor package

Country Status (1)

Country Link
KR (1) KR101131443B1 (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10125714A (en) 1996-10-17 1998-05-15 Shinkawa Ltd Method of forming ball for wire bonding

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10125714A (en) 1996-10-17 1998-05-15 Shinkawa Ltd Method of forming ball for wire bonding

Also Published As

Publication number Publication date
KR20100113669A (en) 2010-10-22

Similar Documents

Publication Publication Date Title
US8313015B2 (en) Gas delivery system for reducing oxidation in wire bonding operations
US6229215B1 (en) Semiconductor device and manufacturing method thereof
KR101378324B1 (en) Automatic wire tail adjustment system for wire bonders
US20070284421A1 (en) Device clamp for reducing oxidation in wire bonding
US8096461B2 (en) Wire-bonding machine with cover-gas supply device
JP2007184385A (en) Semiconductor device, and method of manufacturing same
US7481351B2 (en) Wire bonding apparatus and method for clamping a wire
CN100478117C (en) Wirebonding insulated wire and capillary therefor
KR101131449B1 (en) Set-up apparatus for wire bonding system for manufacturing of semicondutor package
CN1330451C (en) Wire bonder for ball bonding insulated wire and method of using same
KR101131443B1 (en) Set-up apparatus for wire bonding system for manufacturing of semicondutor package
CN102800602A (en) Method of manufacturing semiconductor device
US20210339443A1 (en) Injection mould and injection moulding method
US20140151341A1 (en) Wire bonding apparatus
US5226582A (en) Method for wire-bonding an integrated circuit
US20100078464A1 (en) Wire bonding apparatus and ball forming method
KR100853272B1 (en) Injection apparatus for inert gas to prevent oxidation of copper wire
TW201221273A (en) Wire feeding apparatus for wire bonders
US6250539B1 (en) Wire bonding method
KR101099580B1 (en) Method for preventing oxidation of Cu wire for semiconductor package
KR100294694B1 (en) multi-needle dispenser for potting process in fabrication of TCP
KR100889346B1 (en) Wire bonding apparatus
JPH0465840A (en) Resin-sealed semiconductor device and its manufacture
JPH09232392A (en) Semiconductor device provided with semiconductor chip, semiconductor chip and method for repairing function test trace for the chip
JPH05235080A (en) Wire bonding device using solder wire

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
A107 Divisional application of patent
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20150303

Year of fee payment: 4

FPAY Annual fee payment

Payment date: 20160303

Year of fee payment: 5

FPAY Annual fee payment

Payment date: 20170313

Year of fee payment: 6

FPAY Annual fee payment

Payment date: 20180309

Year of fee payment: 7

FPAY Annual fee payment

Payment date: 20190313

Year of fee payment: 8