KR20050091563A - Forming gas nozzle for manufacturing semiconductor package - Google Patents

Forming gas nozzle for manufacturing semiconductor package Download PDF

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Publication number
KR20050091563A
KR20050091563A KR1020040017048A KR20040017048A KR20050091563A KR 20050091563 A KR20050091563 A KR 20050091563A KR 1020040017048 A KR1020040017048 A KR 1020040017048A KR 20040017048 A KR20040017048 A KR 20040017048A KR 20050091563 A KR20050091563 A KR 20050091563A
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South Korea
Prior art keywords
gas nozzle
forming gas
capillary
wire bonding
discharge
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KR1020040017048A
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Korean (ko)
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정동진
정지영
이호인
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앰코 테크놀로지 코리아 주식회사
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Priority to KR1020040017048A priority Critical patent/KR20050091563A/en
Publication of KR20050091563A publication Critical patent/KR20050091563A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • E—FIXED CONSTRUCTIONS
    • E05—LOCKS; KEYS; WINDOW OR DOOR FITTINGS; SAFES
    • E05D—HINGES OR SUSPENSION DEVICES FOR DOORS, WINDOWS OR WINGS
    • E05D7/00—Hinges or pivots of special construction
    • E05D7/08—Hinges or pivots of special construction for use in suspensions comprising two spigots placed at opposite edges of the wing, especially at the top and the bottom, e.g. trunnions
    • E05D7/081—Hinges or pivots of special construction for use in suspensions comprising two spigots placed at opposite edges of the wing, especially at the top and the bottom, e.g. trunnions the pivot axis of the wing being situated near one edge of the wing, especially at the top and bottom, e.g. trunnions
    • E—FIXED CONSTRUCTIONS
    • E05—LOCKS; KEYS; WINDOW OR DOOR FITTINGS; SAFES
    • E05D—HINGES OR SUSPENSION DEVICES FOR DOORS, WINDOWS OR WINGS
    • E05D3/00—Hinges with pins
    • E05D3/02—Hinges with pins with one pin
    • E—FIXED CONSTRUCTIONS
    • E05—LOCKS; KEYS; WINDOW OR DOOR FITTINGS; SAFES
    • E05Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES E05D AND E05F, RELATING TO CONSTRUCTION ELEMENTS, ELECTRIC CONTROL, POWER SUPPLY, POWER SIGNAL OR TRANSMISSION, USER INTERFACES, MOUNTING OR COUPLING, DETAILS, ACCESSORIES, AUXILIARY OPERATIONS NOT OTHERWISE PROVIDED FOR, APPLICATION THEREOF
    • E05Y2900/00—Application of doors, windows, wings or fittings thereof
    • E05Y2900/10—Application of doors, windows, wings or fittings thereof for buildings or parts thereof
    • E05Y2900/13—Type of wing
    • E05Y2900/132—Doors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

본 발명은 와이어 본딩 장치의 방전 방지 구조에 관한 것으로서, 더욱 상세하게는 반도체 패키지 제조 공정중 구리 와이어 본딩시, 캐필러리의 하단으로 노출되어 있는 구리 와이어 끝단에 EFO 완드에 의한 방전이 이루어지지 않고, 대향되는 위치에 있는 포밍 가스 노즐로 방전이 이루어지는 것을 방지할 수 있도록 한 와이어 본딩 장치의 방전 방지 구조에 관한 것이다.The present invention relates to a discharge preventing structure of a wire bonding apparatus, and more particularly, during the copper wire bonding during the semiconductor package manufacturing process, the discharge by the EFO wand is not made to the end of the copper wire exposed to the lower end of the capillary, Disclosed is a discharge preventing structure of a wire bonding apparatus which can prevent discharge from being generated by a forming gas nozzle at an opposite position.

이를 위해, 본 발명은 EFO완드와, 캐필러리와, 포밍 가스 노즐을 포함하는 와이어 본딩 장치에 있어서, 상기 포밍 가스 노즐의 표면에 수축튜브 또는 실리콘 도포에 의하여 절연코팅층이 형성된 것을 특징으로 하는 와이어 본딩 장치의 방전 방지 구조를 제공한다.To this end, the present invention is a wire bonding apparatus comprising an EFO wand, a capillary, and a forming gas nozzle, the wire characterized in that the insulating coating layer is formed on the surface of the forming gas nozzle by applying a shrink tube or silicon It provides a discharge preventing structure of the bonding apparatus.

Description

와이어 본딩 장치의 방전 방지 구조{Forming gas nozzle for manufacturing semiconductor package} Discharge prevention structure of wire bonding apparatus {Forming gas nozzle for manufacturing semiconductor package}

본 발명은 와이어 본딩 장치의 방전 방지 구조에 관한 것으로서, 더욱 상세하게는 반도체 패키지 제조 공정중 구리 와이어 본딩시, 캐필러리의 하단으로 노출되어 있는 구리 와이어 끝단에 EFO 완드에 의한 방전이 이루어지지 않고, 대향되는 위치에 있는 포밍 가스 노즐로 방전이 이루어지는 것을 방지할 수 있도록 한 와이어 본딩 장치의 방전 방지 구조에 관한 것이다.The present invention relates to a discharge preventing structure of a wire bonding apparatus, and more particularly, during the copper wire bonding during the semiconductor package manufacturing process, the discharge by the EFO wand is not made to the end of the copper wire exposed to the lower end of the capillary, Disclosed is a discharge preventing structure of a wire bonding apparatus which can prevent discharge from being generated by a forming gas nozzle at an opposite position.

일반적으로 반도체 패키지는 해당 기판의 칩부착 영역에 반도체 칩을 접착수단으로 부착하는 공정과, 반도체 칩의 본딩패드와 기판의 본딩영역간을 전기적 신호 교환 가능하게 와이어로 본딩하는 공정과, 반도체 칩과 와이어 등을 감싸는 몰딩 공정 등을 필수적으로 거쳐 제조된다.In general, a semiconductor package includes a process of attaching a semiconductor chip to a chip attaching region of a corresponding substrate by an adhesive means, a process of bonding a semiconductor chip between a bonding pad of the semiconductor chip and a bonding region of the substrate with a wire to enable electrical signal exchange, and a semiconductor chip and a wire. It is manufactured through the molding process surrounding the back.

상기 와이어 본딩 공정에 있어서, 대개는 골드(gold) 와이어를 사용하지만 통전성이 우수하고 저렴한 구리 와이어를 이용하기도 한다.In the wire bonding process, gold wire is usually used, but copper wire having excellent electrical conductivity and low cost may be used.

대개, 와이어 본딩은 도 2에 도시한 바와 같이 캐필러리(capillary)라고 하는 기구를 사용하는 바, 이 캐필러리(10)는 상하방향을 따라 와이어의 공급 경로가 되는 미세한 직경의 관통홀이 형성된 구조로서, 그 끝단으로 구리 와이어(12)가 인출된다.Usually, wire bonding uses a mechanism called capillary as shown in FIG. 2, and the capillary 10 has a fine diameter through hole that serves as a wire supply path along the vertical direction. As a formed structure, the copper wire 12 is drawn out at the end thereof.

이러한 캐필러리(10)를 이용하는 와이어 본딩은 칩의 본딩패드에 행하는 1차본딩(볼 본딩이라고도 함)과, 기판의 본딩영역에 행하는 2차 본딩(스티치 본딩)이 연속 동작으로 실시된다.In the wire bonding using the capillary 10, primary bonding (also referred to as ball bonding) to the bonding pad of the chip and secondary bonding (stitch bonding) to the bonding region of the substrate are performed in a continuous operation.

보다 상세하게는, 1차 본딩은 캐필러리(10)의 끝단으로 인출된 구리 와이어(12)에 방전에 의하여 열을 가하며 볼 형태로 만들어주는 동시에 이 볼 형태의 와이어가 칩의 본딩패드에 본딩되고, 2차 본딩은 상기 캐필러리(10)가 기판의 본딩영역으로 이동하는 동시에 기판의 본딩영역에 구리 와이어(12)를 부착시키면서 끊어주는 동작으로 이루어진다.More specifically, the primary bonding heats the copper wire 12 drawn out to the end of the capillary 10 by discharging and makes a ball shape, and the ball-shaped wire is bonded to the bonding pad of the chip. The secondary bonding is performed by the capillary 10 moving to the bonding area of the substrate and breaking while attaching the copper wire 12 to the bonding area of the substrate.

한편, 첨부한 도 2 내지 3에서 보는 바와 같이, 구리 와이어 본딩용 캐필러리(10)의 일측에는 EFO(Electro Flame-Off) 완드(wand)가 위치되고, 반대쪽 위치에는 포밍 가스 노즐(16)이 위치되어 있다.Meanwhile, as shown in FIGS. 2 to 3, an EFO (Electro Flame-Off) wand is positioned at one side of the capillary 10 for copper wire bonding, and a forming gas nozzle 16 is located at an opposite position. Is located.

상기 EFO 완드(14)에 높은 전압을 걸어주어 그 전압이 상기 캐필러리(10)의 하단에 노출된 구리 와이어(12)에 방전되게 함으로써, 구리 와이어의 끝단이 1차 본딩을 위한 볼 형태(FAB : Free-air Ball)로 만들어지는 것이다.By applying a high voltage to the EFO wand 14 so that the voltage is discharged to the copper wire 12 exposed at the lower end of the capillary 10, the end of the copper wire is ball-shaped for primary bonding ( FAB is made of free-air ball.

이때, 상기 포밍 가스 노즐(16)은 구리 와이어(12)의 끝단을 향하여 질소를 분사/공급해주는 역할을 하는 바, 캐필러리(10) 하단으로 노출된 구리 와이어(12)의 산화 현상이 상기 분사된 질소에 의하여 용이하게 방지된다.At this time, the forming gas nozzle 16 serves to inject / supply nitrogen toward the end of the copper wire 12, and the oxidation phenomenon of the copper wire 12 exposed to the lower end of the capillary 10 is It is easily prevented by injected nitrogen.

이와 같이, EFO 완드와 포밍 가스 노즐 그리고 캐필러리가 서로 인접 설치된 구조의 구리 와이어 본딩 킷(kit)은 다음과 같은 문제점이 있다.As such, the copper wire bonding kit having the structure in which the EFO wand, the forming gas nozzle, and the capillary are adjacent to each other has the following problems.

상기 EFO 완드에 높은 전압이 인가되는 동시에 그 전압이 캐필러리 하단으로 노출된 구리 와이어로 방전이 이루어져야 하지만, 보다 부피가 큰 금속재의 포밍 가스 노즐로 방전이 이루어지는 문제점이 있다.While a high voltage is applied to the EFO wand and the voltage is to be discharged by the copper wire exposed to the lower end of the capillary, there is a problem that the discharge is performed by the forming gas nozzle of a bulky metal material.

즉, EFO 완드에 의한 방전이 캐필러리 하단으로 노출된 구리 와이어 또는 금속재의 포밍 가스 노즐에 선택적으로 이루어지는 문제점이 있다.That is, there is a problem that the discharge by the EFO wand is selectively made to the forming gas nozzle of the copper wire or metal material exposed to the lower end of the capillary.

이렇게 EFO 완드에 의한 방전이 포밍 가스 노즐로 이루어지면, 캐필러리의 하단으로 노출된 구리 와이어는 1차 본딩을 위한 볼(FAB)을 형성하지 못하여, 결국 와이어 본딩 공정이 진행될 수 없게 된다.When the discharge by the EFO wand is made of a forming gas nozzle, the copper wire exposed to the lower end of the capillary does not form a ball for primary bonding (FAB), the wire bonding process can not be carried out eventually.

본 발명은 상기와 같은 문제점을 해결하기 위하여 안출한 것으로서, 와이어 본딩 장치의 포밍 가스 노즐을 절연재로 변경하여 EFO 완드에 의한 방전이 캐필러리의 하단으로 노출된 구리 와이어에만 이루어지고 포밍 가스 노즐에는 이루어지지 않게 함으로써, 와이어 본딩 공정의 신뢰성을 보다 향상시킬 수 있도록 한 와이어 본딩 장치의 방전 방지 구조를 제공하는데 그 목적이 있다. The present invention has been made in order to solve the above problems, by changing the forming gas nozzle of the wire bonding device to an insulating material, the discharge by the EFO wand is made only on the copper wire exposed to the lower end of the capillary and made to the forming gas nozzle It is an object of the present invention to provide a discharge preventing structure of a wire bonding apparatus, which can improve the reliability of the wire bonding process by not holding it.

상기한 목적을 달성하기 위한 본 발명은 EFO완드와, 캐필러리와, 포밍 가스 노즐을 포함하는 와이어 본딩 장치에 있어서, 상기 포밍 가스 노즐의 표면에 수축튜브 또는 실리콘 도포에 의하여 절연코팅층이 형성된 것을 특징으로 하는 와이어 본딩 장치의 방전 방지 구조를 제공한다.In order to achieve the above object, the present invention provides a wire bonding apparatus including an EFO wand, a capillary, and a forming gas nozzle, wherein an insulating coating layer is formed on a surface of the forming gas nozzle by applying a shrink tube or silicon. A discharge preventing structure of a wire bonding apparatus is provided.

이하, 본 발명의 바람직한 실시예를 첨부도면을 참조로 상세하게 설명한다.Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

첨부한 도 1은 본 발명에 따른 와이어 본딩 장치의 방전 방지 구조를 나타내는 사시도이다.1 is a perspective view showing a discharge preventing structure of the wire bonding apparatus according to the present invention.

본 발명은 반도체 패키지 제조공정중 구리 와이어 본딩시, 캐필러리 하단으로 노출된 구리 와이어에만 EFO의 방전이 지속적으로 이루어지도록 하여, 와이어 본딩 공정의 신뢰성을 향상시킨 점에 주안점이 있다.The present invention focuses on improving the reliability of the wire bonding process by continuously discharging the EFO only to the copper wire exposed to the lower end of the capillary during copper wire bonding during the semiconductor package manufacturing process.

통상, 구리 와이어 본딩을 위한 와이어 본딩 장치의 주요 구성은 도 1에서 보는 바와 같이, 구리 와이어(12)를 하단으로 계속 인출시키는 캐필러리(10)와, 이 캐필러리(10)의 하단 일측에 위치된 EFO 완드(14)와, 반대쪽에 위치된 포밍 가스 노즐(16)로 구성되어 있다.In general, the main configuration of the wire bonding apparatus for copper wire bonding, as shown in Figure 1, the capillary 10 for continuously drawing the copper wire 12 to the lower end, and the lower side of the capillary 10 It consists of an EFO wand 14 located at and a forming gas nozzle 16 located at the opposite side.

따라서, 상기 EFO 완드(14)에 인가된 높은 전압이 캐필러리(10)의 하단으로 인출된 구리 와이어(12)에 방전되는 동시에 구리 와이어(12)의 하단이 1차 본딩을 위한 볼(FAB)로 형성되며, 이때 상기 포밍 가스 노즐(16)은 구리 와이어(12)쪽으로 질소가스를 분사하여 산소량을 최소화시키고, 이에 구리 와이어(12)의 산화가 용이하게 방지된다.Accordingly, the high voltage applied to the EFO wand 14 is discharged to the copper wire 12 drawn out to the lower end of the capillary 10 while the lower end of the copper wire 12 is used for primary bonding. In this case, the forming gas nozzle 16 sprays nitrogen gas toward the copper wire 12 to minimize the amount of oxygen, thereby easily oxidizing the copper wire 12.

여기서, 상기 금속재로 만들어진 포밍 가스 노즐(16)의 표면에 걸쳐 절연 코팅층(18)을 형성하는 바, 수축튜브 또는 실리콘 도포 방법으로 절연코팅층을 형성한다.Here, the insulating coating layer 18 is formed over the surface of the forming gas nozzle 16 made of the metal material, and the insulating coating layer is formed by a shrink tube or a silicon coating method.

즉, 포밍 가스 노즐(16)의 전단부(질소가스가 분출되는 쪽) 표면에 튜브를 삽입한 다음, 소정의 열을 가하면 수축을 하게 되는 수축튜브를 이용하여 절연코팅층(18)을 형성하거나, 실리콘을 도포하는 방법으로 절연코팅층(18)을 형성한다.That is, the insulating coating layer 18 is formed by inserting a tube into the front end of the forming gas nozzle 16 (the side on which the nitrogen gas is ejected), and then using a shrinking tube that contracts when a predetermined heat is applied thereto. An insulating coating layer 18 is formed by applying silicon.

바람직하게는 상기 절연코팅층(18)은 와이어 본딩시 발생하는 고온에서도 견딜 수 있도록 150℃ 이상에서도 절연성을 갖도록 한다.Preferably, the insulation coating layer 18 has insulation at 150 ° C. or higher to withstand high temperatures generated during wire bonding.

이렇게 상기 포밍 가스 노즐(16)에 절연코팅층(18)을 형성함으로써, 종래에 EFO 완드(14)에 의한 방전이 포밍 가스 노즐(16)로 이루어지는 현상을 용이하게 방지할 수 있고, 결국 EFO 완드(14)에 의한 방전이 캐필러리(10)의 하단으로 인출된 구리 와이어(12)에만 이루어져 와이어 본딩공정의 신뢰성을 향상시킬 수 있게 된다.By forming the insulating coating layer 18 on the forming gas nozzle 16 in this way, it is possible to easily prevent the phenomenon in which the discharge by the EFO wand 14 is formed in the forming gas nozzle 16 conventionally, and eventually the EFO wand ( Discharge by 14) is made only to the copper wire 12 drawn out to the lower end of the capillary 10 it is possible to improve the reliability of the wire bonding process.

이상에서 본 바와 같이, 본 발명에 따른 와이어 본딩 장치의 방전 방지 구조에 의하면, 포밍 가스 노즐의 표면에 절연코팅층을 형성함으로써, EFO 완드에 의한 방전이 포밍 가스 노즐로 이루어지는 현상을 용이하게 방지하는 동시에 EFO 완드에 의한 방전이 캐필러리의 하단으로 인출된 구리 와이어에만 이루어져, 결국 와이어 본딩공정의 신뢰성을 크게 향상시킬 수 있다.As described above, according to the discharge preventing structure of the wire bonding apparatus according to the present invention, by forming an insulating coating layer on the surface of the forming gas nozzle, the discharge caused by the EFO wand easily forms the forming gas nozzle, The discharge by the EFO wand is made only to the copper wire drawn out to the lower end of the capillary, which can greatly improve the reliability of the wire bonding process.

도 1은 본 발명에 따른 와이어 본딩 장치의 방전 방지 구조를 나타내는 사시도,1 is a perspective view showing a discharge preventing structure of a wire bonding apparatus according to the present invention;

도 2는 종래의 와이어 본딩 장치의 방전 방지 구조를 나타내는 사시도,2 is a perspective view showing a discharge preventing structure of a conventional wire bonding apparatus;

도 3은 종래의 반도체 패키지 제조함에 있어서, EFO 완드에서 포밍 가스 노즐로 방전이 일어나는 현상을 설명하는 사시도,3 is a perspective view illustrating a phenomenon in which a discharge occurs to a forming gas nozzle in an EFO wand in manufacturing a conventional semiconductor package;

<도면의 주요 부분에 대한 부호의 설명><Explanation of symbols for main parts of the drawings>

10 : 캐필러리 12 : 구리 와이어10 capillary 12 copper wire

14 : EFO 완드 16 : 포밍 가스 노즐14: EFO Wand 16: Forming Gas Nozzle

18 : 절연코팅층18: insulation coating layer

Claims (1)

EFO완드와, 캐필러리와, 포밍 가스 노즐을 포함하는 와이어 본딩 장치에 있어서, In the wire bonding apparatus containing an EFO wand, a capillary, and a forming gas nozzle, 상기 포밍 가스 노즐의 표면에 수축튜브 또는 실리콘 도포에 의하여 절연코팅층이 형성된 것을 특징으로 하는 와이어 본딩 장치의 방전 방지 구조.Discharge prevention structure of the wire bonding device, characterized in that the insulating coating layer is formed on the surface of the forming gas nozzle by applying a shrink tube or silicon.
KR1020040017048A 2004-03-12 2004-03-12 Forming gas nozzle for manufacturing semiconductor package KR20050091563A (en)

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