KR101099580B1 - Method for preventing oxidation of Cu wire for semiconductor package - Google Patents
Method for preventing oxidation of Cu wire for semiconductor package Download PDFInfo
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- KR101099580B1 KR101099580B1 KR20090130474A KR20090130474A KR101099580B1 KR 101099580 B1 KR101099580 B1 KR 101099580B1 KR 20090130474 A KR20090130474 A KR 20090130474A KR 20090130474 A KR20090130474 A KR 20090130474A KR 101099580 B1 KR101099580 B1 KR 101099580B1
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Abstract
본 발명은 반도체 패키지의 구리 와이어 산화 방지 방법에 관한 것으로서, 더욱 상세하게는 반도체 패키지의 제조 공정중 기판과 칩간을 구리 와이어로 전기적으로 연결할 때, 산화층을 플럭싱하는 저분자재료를 단독 또는 불활성가스와 혼합하여 구리 와이어쪽으로 분사해줌으로써, 구리 와이어의 산화를 보다 용이하게 방지시킬 수 있는 반도체 패키지의 구리 와이어 산화 방지 방법에 관한 것이다.The present invention relates to a method for preventing copper wire oxidation of a semiconductor package, and more particularly, when a substrate and a chip are electrically connected to each other by copper wire during a manufacturing process of a semiconductor package, a low molecular material for fluxing an oxide layer may be used alone or with an inert gas. The present invention relates to a method for preventing oxidation of a copper wire in a semiconductor package by mixing and spraying the copper wire toward the copper wire.
이를 위해, 본 발명은 반도체 패키지의 제조 공정중 기판과 칩간을 구리 와이어로 전기적으로 연결하는 와이어 본딩 공정중, 저분자재료로서 탄소수 1 내지 5의 카르복실산을 구리 와이어로 분사시켜, 구리 와이어의 산화층에 대한 플럭싱이 이루어질 수 있도록 한 것을 특징으로 하는 반도체 패키지의 구리 와이어 산화 방지 방법을 제공한다.To this end, the present invention in the wire bonding process of electrically connecting the substrate and the chip between the copper wires during the manufacturing process of the semiconductor package, by spraying a carboxylic acid having 1 to 5 carbon atoms as a low molecular material to the copper wire, the oxide layer of the copper wire It provides a method for preventing copper wire oxidation of a semiconductor package, characterized in that the flux for the.
반도체 패키지, 구리 와이어, 산화, 방지, 저분자재료, 플럭싱, 불활성가스 Semiconductor Package, Copper Wire, Oxidation, Prevention, Low Molecular Materials, Fluxing, Inert Gas
Description
본 발명은 반도체 패키지의 구리 와이어 산화 방지 방법에 관한 것으로서, 더욱 상세하게는 반도체 패키지의 제조 공정중 기판과 칩간을 구리 와이어로 전기적으로 연결할 때, 산화층을 플럭싱하는 저분자재료를 단독 또는 불활성가스와 혼합하여 구리 와이어쪽으로 분사해줌으로써, 구리 와이어의 산화를 보다 용이하게 방지시킬 수 있는 반도체 패키지의 구리 와이어 산화 방지 방법에 관한 것이다.The present invention relates to a method for preventing copper wire oxidation of a semiconductor package, and more particularly, when a substrate and a chip are electrically connected to each other by copper wire during a manufacturing process of a semiconductor package, a low molecular material for fluxing an oxide layer may be used alone or with an inert gas. The present invention relates to a method for preventing oxidation of a copper wire in a semiconductor package by mixing and spraying the copper wire toward the copper wire.
통상적으로, 반도체 패키지는 리드프레임, 인쇄회로기판, 회로필름 등 여러가지 기판을 이용하여 다양한 구조로 제조되고 있으며, 그 크기 및 두께 또한 패키지의 종류에 따라 다양하게 제조되고 있다.In general, semiconductor packages are manufactured in various structures using various substrates such as lead frames, printed circuit boards, and circuit films, and their sizes and thicknesses are also variously manufactured according to the type of package.
반도체 패키지의 제조 공정을 보면, 회로 등의 소자가 집적화된 반도체 칩과 기판의 제공 단계와, 기판의 칩탑재영역에 반도체칩을 접착수단으로 접착하는 칩 부착 단계과와, 상기 기판과 칩간을 전기적 신호 교환을 위하여 와이어로 연결하는 와이어 본딩 단계와, 상기 칩과 와이어 등을 외부 충격이나 자극으로부터 보호하기 위하여 몰딩 컴파운드 수지로 몰딩하는 몰딩 단계 등을 포함한다.According to the manufacturing process of the semiconductor package, the steps of providing a semiconductor chip and a substrate in which devices such as a circuit are integrated, attaching the chip to the semiconductor chip mounting region by an adhesive means, and an electrical signal between the substrate and the chip A wire bonding step of connecting with wires for exchange, and a molding step of molding with a molding compound resin to protect the chips and wires from external impact or stimulus.
상기 반도체 패키지의 제조 공정중 와이어 본딩 공정을 보다 구체적으로 살펴보면 다음과 같다.Looking at the wire bonding process of the semiconductor package manufacturing process in more detail as follows.
와이어 본딩 공정에 있어서, 대개는 골드(gold) 와이어를 사용하지만 통전성이 우수하고 비용이 저렴한 구리 와이어를 이용하기도 한다.In the wire bonding process, gold wire is usually used, but copper wire having good electrical conductivity and low cost is also used.
첨부한 도 2에 도시된 바와 같이, 와이어 본딩 공정은 와이어의 공급 경로가 되는 미세한 직경의 관통홀이 형성된 캐필러리(10)를 이용하여 이루어지는데, 캐필러리가 반도체 칩의 본딩패드와 기판의 본딩영역간을 왕복 운동하면서 반도체 칩의 본딩패드와 기판의 본딩영역을 와이어로 연결하게 된다.As shown in FIG. 2, the wire bonding process is performed by using a capillary 10 having a through hole having a small diameter, which is a supply path of the wire, wherein the capillary is formed of a bonding pad of a semiconductor chip and a substrate. While reciprocating between the bonding regions, the bonding pad of the semiconductor chip and the bonding region of the substrate are connected by wires.
즉, 캐필러리(10)를 이용하는 와이어 본딩은 칩의 본딩패드에 행하는 볼 본딩(1차 본딩이라고도 함)과, 기판의 본딩영역에 행하는 스티치 본딩(2차 본딩이라고도 함)이 연속 구분 동작으로 실시된다.That is, the wire bonding using the capillary 10 is a continuous division operation of ball bonding (also referred to as primary bonding) to the bonding pad of the chip and stitch bonding (also referred to as secondary bonding) to the bonding region of the substrate. Is carried out.
보다 상세하게는, 볼 본딩은 캐필러리(10)의 끝단으로 인출된 구리 와이어(12)에 방전에 의하여 열을 가하며 볼 형태로 만들어주는 동시에 이 볼 형태의 와이어가 칩의 본딩패드에 본딩되고, 스티치 본딩(stitch)은 상기 캐필러리(10)가 기판의 본딩영역으로 이동하는 동시에 기판의 본딩영역에 구리 와이어(12)를 부착시키면서 끊어주는 동작으로 이루어진다.More specifically, the ball bonding heats the
이때, 상기 구리 와이어 본딩을 위한 캐필러리(10)의 일측에는 EFO(Electro Flame-Off) 완드(wand)(14)가 위치되어 있고, 상기 EFO 완드(14)에 높은 전압을 걸 어주어 그 전압이 상기 캐필러리(10)의 하단에 노출된 구리 와이어(12)에 방전되게 함으로써, 구리 와이어(12)의 끝단이 녹으면서 볼 본딩을 위한 원형의 볼 형태가 만들어지는 것이다.At this time, an EFO (Electro Flame-Off)
그러나, 반도체 패키지의 와이어 본딩 공정에 있어서, 캐필러리 하단으로 노출된 구리 와이어가 외기에 노출되는 상태가 되어 산화 현상이 발생하게 되고, 산화된 구리 와이어는 칩의 본딩패드에 볼 본딩에 의한 금속간 결합을 형성하는데 방해를 하며, 구리의 경화도를 증가시켜 볼 본딩 부위에 크레이터링(Cratering)과 같은 품질 문제를 유발하게 된다.However, in the wire bonding process of the semiconductor package, the copper wire exposed to the lower end of the capillary is exposed to the outside air so that oxidation occurs, and the oxidized copper wire is formed by ball bonding to the bonding pad of the chip. It interferes with the formation of interbonds and increases the degree of hardening of copper, causing quality problems such as cratering in the ball bonding site.
이러한 문제점을 해결하기 위하여, EFO 완드의 반대편에 불활성가스 분사노즐을 배치하여, 캐필러리를 통해 인출된 구리와이어의 하단부에 향하여 불활성가스(N2, Ar, N2에 H(수소)가 5%정도 포함된 포밍가스 등)를 분사함으로써, 구리 와이어의 산화를 방지하고 있다.In order to solve this problem, an inert gas injection nozzle is disposed on the opposite side of the EFO wand, so that the inert gas (N 2 , Ar, N 2 to H) is directed toward the lower end of the copper wire drawn out through the capillary. The injection of a forming gas containing about%) prevents oxidation of the copper wire.
즉, 구리 와이어의 끝단부에 분사된 불활성가스가 외기와의 차폐막 역할을 하여, 구리 와이어의 산화를 방지하게 된다.That is, the inert gas injected at the end of the copper wire serves as a shielding film to the outside air, thereby preventing the oxidation of the copper wire.
하지만, 캐릴러리로부터 인출되는 구리와이어의 주변 외기를 불활성가스가 완벽하게 차단하지 못하므로, 완전한 산화 방지 효과를 얻지 못하는 단점이 있다.However, since the inert gas does not completely block the ambient air of the copper wire drawn out from the carrier, there is a disadvantage in that a full oxidation prevention effect is not obtained.
또한, 와이어 본더 장비에 탑재전에 제품화된 상태로 반입되는 구리 와이어에 이미 산화층이 형성된 경우, 이를 확인하지 못한 채로 산화층이 형성된 구리 와이어를 와이어 본더 장비에 탑재하여 와이어 본딩이 이루어지는 경우에는 불활성가 스를 분사하더라도, 산화 방지의 목적을 실현할 수 없는 문제점이 있다.In addition, when an oxide layer is already formed on the copper wire brought into the wire bonder in a commercialized state before mounting on the wire bonder, inert gas is sprayed when the wire bond is formed by mounting the copper wire having the oxide layer on the wire bonder without confirming this. Even if there is a problem that the purpose of the oxidation prevention can not be realized.
본 발명은 상기와 같은 점을 감안하여 안출한 것으로서, 반도체 패키지의 제조 공정중 캐필러리를 통해 기판과 칩간을 구리 와이어로 전기적으로 연결하는 와이어 본딩 공정중, 캐필러리로부터 인출되는 구리 와이어를 향하여 산화층을 플럭싱할 수 있는 저분자재료를 단독으로 분사하거나, 또는 불활성가스와 혼합 분사하여, 산화방지막을 형성함과 더불어 구리 와이어에 산화가 발생되면 저분자재료에 의한 산화층 제거 플럭싱이 이루어지도록 함으로써, 와이어 본딩시 구리 와이어의 산화를 보다 용이하게 방지시킬 수 있도록 한 반도체 패키지의 구리 와이어 산화 방지 방법을 제공하는데 그 목적이 있다.The present invention has been made in view of the above, and the copper wire drawn from the capillary during the wire bonding step of electrically connecting the substrate and the chip with the copper wire through the capillary during the manufacturing process of the semiconductor package. By spraying a low molecular material capable of fluxing the oxide layer alone or by injecting a mixture with an inert gas to form an anti-oxidation film. It is an object of the present invention to provide a method for preventing the oxidation of copper wires in a semiconductor package to more easily prevent the oxidation of copper wires during wire bonding.
상기한 목적을 달성하기 위한 본 발명은 반도체 패키지의 제조 공정중 기판과 칩간을 구리 와이어로 전기적으로 연결하는 와이어 본딩 공정중, 저분자재료로서 탄소수 1 내지 5의 카르복실산을 구리 와이어로 분사시켜, 구리 와이어의 산화층에 대한 플럭싱이 이루어질 수 있도록 한 것을 특징으로 하는 반도체 패키지의 구리 와이어 산화 방지 방법을 제공한다.The present invention for achieving the above object is spraying carboxylic acid having 1 to 5 carbon atoms with copper wire as a low molecular material in the wire bonding process of electrically connecting the substrate and the chip between the copper wire during the manufacturing process of the semiconductor package, Provided is a method for preventing copper wire oxidation of a semiconductor package, characterized in that fluxing of an oxide layer of a copper wire can be performed.
바람직한 구현예로서, 상기 탄소수 1 내지 5의 카르복실산은 포름산(HCOOH), 아세트산(C2H5COOH), 프로피온산(C3H7COOH)중 선택된 어느 하나인 것을 특징으로 한다.In a preferred embodiment, the carboxylic acid having 1 to 5 carbon atoms is one selected from formic acid (HCOOH), acetic acid (C 2 H 5 COOH), propionic acid (C 3 H 7 COOH).
더욱 바람직한 구현예로서, 상기 탄소수 1 내지 5의 카르복실산을 불활성가스인 N2 또는 Ar과 혼합하여 분사하는 것을 특징으로 한다.In a more preferred embodiment, the carboxylic acid having 1 to 5 carbon atoms is mixed and sprayed with N 2 or Ar which is an inert gas.
상기한 과제 해결 수단을 통하여, 본 발명은 다음과 같은 효과를 제공한다.Through the above problem solving means, the present invention provides the following effects.
본 발명에 따르면, 반도체 패키지의 제조 공정중 캐필러리를 통해 기판과 칩간을 구리 와이어로 연결하는 와이어 본딩 공정중, 캐필러리로부터 인출되는 구리 와이어를 향하여 저분자재료인 탄소수 1 내지 5의 카로복실산을 단독으로 분사하거나, 또는 불활성가스와 혼합 분사함으로써, 불활성가스가 외기를 차단하는 산화방지막을 형성하여 구리 와이어의 산화를 방지할 수 있다.According to the present invention, during the wire bonding process of connecting the substrate and the chip with the copper wire through the capillary during the manufacturing process of the semiconductor package, the carboxyl having 1 to 5 carbon atoms, which is a low molecular material, is directed toward the copper wire drawn out from the capillary. By spraying the acid alone or by injecting the mixture with an inert gas, an oxidation film for blocking the outside air by the inert gas can be formed to prevent oxidation of the copper wire.
특히, 구리 와이어의 산화층이 형성된 경우 불활성가스와 함께 분사되는 저분자재료가 산화층을 플럭싱 작용으로 제거하는 효과를 얻을 수 있다.In particular, when the oxide layer of the copper wire is formed, the low molecular material injected with the inert gas can obtain the effect of removing the oxide layer by the fluxing action.
이하, 본 발명의 바람직한 실시예를 첨부도면을 참조로 상세하게 설명하기로 한다.Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.
첨부한 도 1은 본 발명에 따른 반도체 패키지의 구리 와이어 산화 방지 방법 을 설명하는 개략도이다.1 is a schematic view illustrating a method for preventing copper wire oxidation of a semiconductor package according to the present invention.
전술한 바와 같이, 반도체 패키지 제조 공정중 와이어 본딩 공정시, 기판과 칩간, 또는 칩과 칩간이 캐필러리에 의하여 구리 와이어로 연결될 때, 구리 와이어를 향하여 불활성가스(N2, Ar, N2에 H(수소)가 5%정도 포함된 포밍가스 등)를 분사하여, 구리 와이어의 산화를 방지하고 있다.As described above, in the wire bonding process during the semiconductor package manufacturing process, when the substrate and the chip or the chip and the chip are connected to the copper wire by the capillary, the inert gas (N 2 , Ar, N 2 to H) is directed toward the copper wire. (Forming gas containing 5% of hydrogen) is injected to prevent oxidation of the copper wire.
본 발명에 따르면, 기판과 칩간, 또는 칩과 칩간이 구리 와이어로 전기적으로 연결될 때, 캐필러리로부터 인출되는 구리 와이어를 향하여 산화층을 플럭싱할 수 있는 저분자재료를 단독으로 분사하거나, 또는 불활성가스와 혼합 분사함으로써, 외기와의 차단을 위한 산화방지막을 형성함과 더불어 구리 와이어에 이미 발생된 산화층에 대한 플럭싱 제거가 이루어지도록 한 점에 주안점이 있다.According to the present invention, when the substrate and the chip or the chip and the chip are electrically connected with each other, the low molecular material capable of fluxing the oxide layer toward the copper wire withdrawn from the capillary, or inert gas The main focus is to form an anti-oxidation film for blocking the outside air and to remove the flux of the oxide layer already generated in the copper wire by spraying with and spraying with.
보다 상세하게는, 반도체 패키지의 제조 공정중 기판과 칩간을 구리 와이어로 전기적으로 연결하는 와이어 본딩 공정중, 저분자재료로서 탄소수 1 내지 5의 카르복실산을 구리 와이어로 분사시키거나, 탄소수 1 내지 5의 카르복실산을 불활성가스인 N2 또는 Ar과 적절히 혼합하여 분사함으로써, 카르복실산과 혼합된 불활성가스가 외기와의 차단을 위한 산화방지막을 형성하는 동시에 카르복실산이 구리 와이어에 이미 발생된 산화층에 대한 플럭싱 작용을 하게 된다.More specifically, in the wire bonding step of electrically connecting the substrate and the chip with the copper wire during the manufacturing process of the semiconductor package, carboxylic acid having 1 to 5 carbon atoms is sprayed onto the copper wire as the low molecular material, or 1 to 5 carbon atoms. By spraying the carboxylic acid of amine with N 2 or Ar, which is an inert gas, the inert gas mixed with the carboxylic acid forms an anti-oxidation film for blocking external air, and the carboxylic acid is formed on the oxide layer already generated on the copper wire. It will be fluxing action.
바람직하게는, 상기 탄소수 1 내지 5의 카르복실산은 포름산(HCOOH), 아세트산(C2H5COOH), 프로피온산(C3H7COOH)중 선택된 어느 하나를 사용할 수 있다.Preferably, the carboxylic acid having 1 to 5 carbon atoms may use any one selected from formic acid (HCOOH), acetic acid (C 2 H 5 COOH), propionic acid (C 3 H 7 COOH).
따라서, 상기 포름산(HCOOH), 아세트산(C2H5COOH), 프로피온산(C3H7COOH)중 선택된 어느 하나인 카로복실산이 와이어 본딩을 위하여 캐필러리로부터 인출되는 구리 와이어쪽으로 분사되거나, 포름산(HCOOH), 아세트산(C2H5COOH), 프로피온산(C3H7COOH)중 선택된 어느 하나인 카르복실산이 불활성가스인 N2 또는 Ar과 적절히 혼합 분사되도록 함으로써, 카르복실산과 혼합된 불활성가스가 외기와의 차단을 위한 산화방지막을 형성하여 구리와이어의 산화를 방지하게 되고, 동시에 구리 와이어에 발생된 산화층을 카르복실산이 플럭싱 작용으로 제거하게 된다.Thus, any one selected from the formic acid (HCOOH), acetic acid (C 2 H 5 COOH), propionic acid (C 3 H 7 COOH) is a carboxylic acid is sprayed toward the copper wire drawn from the capillary for wire bonding, or An inert gas mixed with the carboxylic acid by allowing the carboxylic acid, which is one selected from (HCOOH), acetic acid (C 2 H 5 COOH), and propionic acid (C 3 H 7 COOH), to be properly mixed with the inert gas N 2 or Ar By forming an anti-oxidation film for blocking the outside air to prevent oxidation of the copper wire, at the same time, the oxidized layer generated on the copper wire is removed by the fluxing action.
여기서, 카르복실산에 의한 플럭싱 작용에 대하여 간략히 설명하면 다음과 같다.Here, briefly the fluxing action by the carboxylic acid is as follows.
상기 구리 와이어의 표면에 형성된 산화막(표면 산화막)을 제거하기 위해 표면 산화막이 카르복실산염으로 변화되고 나서 환원/제거되는 특징을 가지며, 따라서 표면 산화막을 균일하고 효과적으로 제거할 수 있고, 구리 와이어의 물리적 및 화학적 손상을 주지 않게 된다.In order to remove the oxide film (surface oxide film) formed on the surface of the copper wire, the surface oxide film is changed to carboxylate and then reduced / removed, and thus the surface oxide film can be removed uniformly and effectively, and the physical properties of the copper wire And no chemical damage.
즉, 본 발명에서 사용되는 카르복실산중 가스 형태의 포름산을 사용하는 경우, 구리 산화막과 반응한 후, 포름산염이 물과 이산화탄소로 분해되기 때문에, 구리 와이어의 표면에 불순물이 잔류하지 않게 되고, 구리 와이어의 물리적 및 화학적 손상을 주지 않게 된다.That is, when using formic acid in gaseous form in the carboxylic acid used in the present invention, since the formate is decomposed into water and carbon dioxide after reacting with the copper oxide film, impurities do not remain on the surface of the copper wire, and copper It will not cause physical and chemical damage to the wire.
한편, 기판 또는 반도체 칩의 와이어가 본딩되는 패드 부위가 Au 도금된 패드가 아닌 Cu 패드를 사용할 경우, 기존의 와이어 본딩 방법에서는 이미 패드 위에 형성된 산화물(oxide)를 제거할 수 있는 방법이 없지만, 상기와 같이 카르복실산을 분무하면서 Cu 패드에 소정의 온도를 가하게 되면, 기 형성된 산화물 제거가 용이하게 이루어질 수 있다.On the other hand, in the case where the pad portion where the wire of the substrate or the semiconductor chip is bonded is a Cu pad other than the Au plated pad, there is no method of removing the oxide already formed on the pad by the conventional wire bonding method. When a predetermined temperature is applied to the Cu pad while spraying the carboxylic acid as described above, the formed oxide may be easily removed.
이와 같이, 반도체 패키지의 제조 공정중 캐필러리를 통해 기판과 칩간을 구리 와이어로 연결하는 와이어 본딩 공정중, 구리 와이어를 향하여 탄소수 1 내지 5의 카로복실산을 단독, 또는 불활성가스와 적절히 혼합 분사함으로써, 불활성가스가 외기를 차단하는 산화방지막을 형성하여 구리 와이어의 산화를 방지할 수 있고, 구리 와이어에 산화막이 형성된 경우에는 카르복실산에 의한 플럭싱 작용에 의하여 산화막이 용이하게 제거되어, 구리 와이어 본딩 품질을 크게 향상시킬 수 있다.As described above, in the wire bonding process of connecting the substrate and the chip with the copper wire through the capillary during the manufacturing process of the semiconductor package, the carboxylic acid having 1 to 5 carbon atoms is mixed or sprayed with an inert gas as appropriate. As a result, an inert gas forms an anti-oxidation film that blocks outside air, thereby preventing the oxidation of the copper wire. When the oxide film is formed on the copper wire, the oxide film is easily removed by the fluxing action by the carboxylic acid, thereby preventing copper. The wire bonding quality can be greatly improved.
도 1은 본 발명에 따른 반도체 패키지의 구리 와이어 산화 방지 방법을 설명하는 개략도,1 is a schematic diagram illustrating a method for preventing copper wire oxidation of a semiconductor package according to the present invention;
도 2는 종래의 반도체 패키지의 구리 와이어 산화 방지 방법을 설명하는 개략도.2 is a schematic diagram illustrating a method for preventing copper wire oxidation of a conventional semiconductor package.
<도면의 주요 부분에 대한 부호의 설명><Explanation of symbols for the main parts of the drawings>
10 : 캐필러리10: capillary
12 : 구리 와이어12: copper wire
14 : EFO 완드14: EFO Wand
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