KR100889346B1 - Wire bonding apparatus - Google Patents

Wire bonding apparatus Download PDF

Info

Publication number
KR100889346B1
KR100889346B1 KR1020070055575A KR20070055575A KR100889346B1 KR 100889346 B1 KR100889346 B1 KR 100889346B1 KR 1020070055575 A KR1020070055575 A KR 1020070055575A KR 20070055575 A KR20070055575 A KR 20070055575A KR 100889346 B1 KR100889346 B1 KR 100889346B1
Authority
KR
South Korea
Prior art keywords
wire
inert gas
bonding apparatus
heating
bonding
Prior art date
Application number
KR1020070055575A
Other languages
Korean (ko)
Other versions
KR20080107610A (en
Inventor
고병완
Original Assignee
고병완
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 고병완 filed Critical 고병완
Priority to KR1020070055575A priority Critical patent/KR100889346B1/en
Publication of KR20080107610A publication Critical patent/KR20080107610A/en
Application granted granted Critical
Publication of KR100889346B1 publication Critical patent/KR100889346B1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85053—Bonding environment
    • H01L2224/85054—Composition of the atmosphere
    • H01L2224/85065—Composition of the atmosphere being reducing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85053—Bonding environment
    • H01L2224/85054—Composition of the atmosphere
    • H01L2224/85075—Composition of the atmosphere being inert
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85203—Thermocompression bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01007—Nitrogen [N]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)

Abstract

본 발명에 의한 와이어 본딩장치는, 본딩 영역에 불활성 가스를 분사하여 와이어에 산화막이 형성되는 현상을 방지하도록 구성되는 와이어 본딩장치에 있어서, 상기 불활성 가스가 분사되기 이전에 상기 불활성 가스를 가열하는 가열부를 더 포함하여, 구리 또는 구리 합금으로 제작되는 와이어를 칩 패드 및 리드에 본딩시킬 수 있도록 구성된다.The wire bonding apparatus according to the present invention is a wire bonding apparatus configured to inject an inert gas into a bonding region to prevent an oxide film from being formed on the wire, wherein the heating is performed to heat the inert gas before the inert gas is injected. It further comprises a portion, is configured to be able to bond the wire made of copper or copper alloy to the chip pad and the lead.

본 발명에 의한 와이어 본딩장치를 이용하면, 와이어 본딩 공정 시 와이어나 칩패드, 리드 등에 산화막이 형성되는 현상을 방지할 수 있고, 구리와 같이 금보다 용융점이 낮은 재질의 와이어라도 칩 패드 및 리드에 안정적으로 본딩시킬 수 있으며, 고가의 금 와이어를 구리 와이어 또는 구리합금 와이어로 대체시킬 수 있으므로 제조원가를 절감시킬 수 있다는 장점이 있다.By using the wire bonding apparatus according to the present invention, it is possible to prevent a phenomenon in which an oxide film is formed in a wire, a chip pad, a lead, or the like during the wire bonding process, and even a wire having a lower melting point than gold, such as copper, may be formed on the chip pad and the lead. Since it can be stably bonded and expensive gold wires can be replaced with copper wires or copper alloy wires, manufacturing costs can be reduced.

와이어, 본딩, 금, 구리, 질소, 수소, 가열 Wire, bonding, gold, copper, nitrogen, hydrogen, heating

Description

와이어 본딩 장치{Wire bonding apparatus}Wire bonding apparatus

도 1은 본 발명에 의한 와이어 본딩장치의 구성을 도시하는 개략도이다.1 is a schematic view showing the configuration of a wire bonding apparatus according to the present invention.

도 2는 본 발명에 의한 와이어 본딩장치의 본딩 영역을 확대한 개략도이다.2 is an enlarged schematic view of the bonding area of the wire bonding apparatus according to the present invention.

도 3 내지 도 5는 본 발명에 의한 와이어 본딩장치의 동작을 순차적으로 도시하는 개략도이다.3 to 5 are schematic diagrams sequentially showing operations of the wire bonding apparatus according to the present invention.

<도면의 주요부분에 대한 부호의 설명><Description of the symbols for the main parts of the drawings>

10 : 반도체 칩 12 : 칩패드10 semiconductor chip 12 chip pad

20 : 리드 30 : 히팅블록20: lead 30: heating block

40 : 와이어 42 : 와이어볼40: wire 42: wire ball

100 : 캐필러리 110 : 스풀100: capillary 110: spool

200 : 질소탱크 210 : 와이어 가스공급관200: nitrogen tank 210: wire gas supply pipe

300 : 수소탱크 310 : 본딩영역 가스공급관300: hydrogen tank 310: bonding area gas supply pipe

400 : 가열부 500 : 제어부400: heating part 500: control part

510 : 조작패널 520 : 디스플레이부510: operation panel 520: display unit

본 발명은 구리 재질의 와이어를 이용하여 반도체 패키지의 칩 패드와 리드를 전기적으로 연결시킬 수 있도록 구성되는 와이어 본딩장치에 관한 것으로, 더 상세하게는 가열된 불활성 가스를 와이어 끝단과 본딩 영역에 분사시킴으로써 보다 효과적으로 구리 재질의 와이어를 본딩시킬 수 있도록 구성되는 와이어 본딩장치에 관한 것이다.The present invention relates to a wire bonding apparatus configured to electrically connect a chip pad and a lead of a semiconductor package using a wire made of copper, and more particularly, by spraying a heated inert gas to the wire end and the bonding region. The present invention relates to a wire bonding apparatus configured to more effectively bond copper wire.

일반적인 반도체 패키지 조립 공정은 리드프레임의 다이패드에 반도체 칩을 부착하는 다이 어태치 공정과, 반도체 칩과 리드프레임의 리드를 도전성 와이어로 연결하는 와이어 본딩 공정과, 성형수지를 이용하여 도전성 와이어와 반도체 칩에 외관을 형성하는 몰딩 공정과, 성형 수지 외부로 노출된 리드 표면을 도금하는 도금 공정과, 아웃터 리드를 소정 길이로 절단하고 반도체 패키지 특성에 맞게 소정모양으로 절곡하는 트림/폼 공정 순으로 진행된다.Typical semiconductor package assembly processes include a die attach process for attaching a semiconductor chip to a die pad of a lead frame, a wire bonding process for connecting a semiconductor chip and a lead of a lead frame with a conductive wire, and a conductive wire and a semiconductor using a molding resin. The molding process for forming the appearance on the chip, the plating process for plating the lead surface exposed to the outside of the molding resin, and the trim / foam process for cutting the outer lead to a predetermined length and bending it to a predetermined shape according to the characteristics of the semiconductor package. do.

여기서, 리드프레임은 반도체 패키지의 골격을 형성하고 반도체 칩과 외부와의 전기적 신호 전달을 수행함과 동시에 반도체 칩에서 발생되는 열을 외부로 발산시키는 구성요소로서, 일반적으로 구리(Cu)로 제작된다. 또한 상기 와이어는 반도체 칩의 칩 패드와 패키지 기판의 리드를 전기적으로 연결시키는 구성요소로서, 일반적으로 알루미늄 또는 금으로 제작된다. Here, the lead frame forms a skeleton of the semiconductor package, transmits electrical signals between the semiconductor chip and the outside, and simultaneously dissipates heat generated from the semiconductor chip to the outside, and is generally made of copper (Cu). In addition, the wire is a component that electrically connects the chip pad of the semiconductor chip and the lead of the package substrate, and is generally made of aluminum or gold.

상기 와이어를 리드에 본딩시키고자 할 때에는 토치나 고주파 가열기 등으로 상기 와이어를 가열하여 와이어 끝단에 볼 형상의 와이어볼을 형성하는 과정과 상기 와이어볼을 칩패드에 본딩시키는 과정을 거치게 되는데, 이때 공기 중의 산소에 의해 와이어에 산화막이 형성되어 상기 와이어가 칩패드 및 리드에 정상적으로 본딩되지 아니하는 경우가 빈번히 발생되는바, 최근 들어서는 상기 리드 및 와이어에 산화막이 형성되는 현상을 방지하기 위하여 질소가스와 같은 불활성 가스를 본딩 영역에 분사하도록 할 수 있도록 구성된 와이어 본딩 장치가 많이 사용되고 있다.In order to bond the wire to the lead, a process of heating the wire with a torch or a high frequency heater to form a ball-shaped wire ball at the end of the wire and bonding the wire ball to the chip pad are performed. Oxide film is formed on the wire by oxygen in the wire, so that the wire is not normally bonded to the chip pad and the lead. In recent years, in order to prevent the oxide film from being formed on the lead and the wire, such as nitrogen gas. Many wire bonding devices are constructed so that inert gas can be injected into the bonding region.

이때, 상기 와이어가 알루미늄으로 제작되는 경우 금에 비해 도전성이 낮으므로 통상적으로 금으로 제작된 와이어를 주로 사용하게 되는데, 이와 같이 금으로 와이어를 제작하게 되면 와이어 제조비용이 상승된다는 문제점이 있다.In this case, when the wire is made of aluminum, since the conductivity is lower than that of gold, the wire is usually made of gold. The wire manufacturing cost is increased when the wire is made of gold.

이와 같은 문제점을 해결하기 위하여 구리와 같이 가격이 저렴하면서도 전도성이 높은 재료로 와이어를 제작하는 방안이 제안된 바 있으나, 구리는 금에 비해 용융점이 높기 때문에 칩 패드와의 결합성이 낮아지게 된다는 단점이 있다. 더욱이, 산화막 형성을 방지하기 위하여 본딩 영역으로 분사되는 불활성 가스가 액체 질소로부터 기화된 질소가스로 적용되는 경우, 상기 질소가스가 본딩 영역의 온도를 낮추게 되어 와이어볼이 정상적으로 형성되지 아니하므로, 상기 와이어가 칩 패드 또는 리드에 확실하게 본딩되지 못하게 된다는 문제점이 있다.In order to solve this problem, a method of manufacturing a wire using a low-cost and high-conductivity material such as copper has been proposed. However, since copper has a higher melting point than gold, the bond with the chip pad is reduced. There is this. Further, when the inert gas injected into the bonding region is applied to the vaporized nitrogen gas from the liquid nitrogen to prevent the formation of the oxide film, the nitrogen gas lowers the temperature of the bonding region, so that the wire ball is not formed normally, the wire There is a problem that is not securely bonded to the chip pad or lead.

본 발명은 상기와 같은 문제점을 해결하기 위하여 제안된 것으로, 와이어 끝 단에 불활성 가스 가열한 후 공급함으로써 와이어볼이 정상적으로 형성될 수 있도록 하고, 와이어볼에 산화막이 형성되는 현상을 방지할 수 있으며, 구리와 같이 금보다 용융점이 낮은 재질의 와이어를 칩 패드 및 리드에 안정적으로 본딩시킬 수 있도록 구성되는 와이어 본딩장치를 제공하는데 목적이 있다.The present invention has been proposed to solve the above problems, by supplying after heating the inert gas to the end of the wire so that the wire ball can be formed normally, it is possible to prevent the phenomenon that the oxide film is formed on the wire ball, An object of the present invention is to provide a wire bonding apparatus configured to stably bond a wire having a lower melting point than gold, such as copper, to a chip pad and a lead.

상기와 같은 목적을 달성하기 위한 본 발명에 의한 와이어 본딩장치는,Wire bonding apparatus according to the present invention for achieving the above object,

본딩 영역에 불활성 가스를 분사하여 와이어에 산화막이 형성되는 현상을 방지하도록 구성되는 와이어 본딩장치에 있어서,In the wire bonding apparatus configured to prevent the phenomenon that the oxide film is formed on the wire by injecting an inert gas to the bonding region,

상기 불활성 가스가 분사되기 이전에 상기 불활성 가스를 가열하는 가열부를 더 포함하여, 구리 또는 구리 합금으로 제작되는 와이어를 칩패드 및 리드에 본딩시킬 수 있도록 구성된다.It further comprises a heating unit for heating the inert gas before the inert gas is injected, it is configured to bond the wire made of copper or copper alloy to the chip pad and the lead.

상기 가열부에 의해 가열된 불활성 가스를 상기 와이어의 끝단으로 공급하는 와이어 가스공급관을 더 포함한다.It further comprises a wire gas supply pipe for supplying the inert gas heated by the heating unit to the end of the wire.

상기 가열부에 의해 가열된 불활성 가스를 상기 와이어가 본딩되는 칩패드 상으로 공급하는 본딩영역 가스공급관을 더 포함한다.And a bonding area gas supply pipe for supplying the inert gas heated by the heating unit onto the chip pad to which the wire is bonded.

상기 불활성 가스는 질소로 적용된다.The inert gas is applied with nitrogen.

상기 불활성 가스는 질소와 수소의 혼합가스로 적용된다.The inert gas is applied as a mixed gas of nitrogen and hydrogen.

이때 상기 불활성 가스는, 90 내지 99 중량%의 질소와, 1 내지 10 중량%의 수소를 포함한다.At this time, the inert gas contains 90 to 99% by weight of nitrogen, and 1 to 10% by weight of hydrogen.

상기 가열부의 가열온도를 제어하는 제어부를 추가로 구비한다.A control unit for controlling the heating temperature of the heating unit is further provided.

이하 첨부된 도면을 참조하여 본 발명에 의한 와이어 본딩장치의 실시예를 상세히 설명한다.Hereinafter, embodiments of the wire bonding apparatus according to the present invention will be described in detail with reference to the accompanying drawings.

도 1은 본 발명에 의한 와이어 본딩장치의 구성을 도시하는 개략도이고, 도 2는 본 발명에 의한 와이어 본딩장치의 본딩 영역을 확대한 개략도이다.1 is a schematic diagram showing the configuration of a wire bonding apparatus according to the present invention, and FIG. 2 is a schematic diagram showing an enlarged bonding area of the wire bonding apparatus according to the present invention.

본 발명에 의한 와이어 본딩장치는, 반도체칩(10)의 칩패드(12)와 리드프레임의 리드(20)가 통전되도록 와이어(40)의 양단을 각각 상기 칩패드(12)와 리드(20)에 본딩시키기 위한 장치로서, 상기 와이어(40)의 끝단과 와이어(40)가 본딩되는 본딩 영역으로 질소가스를 분사시킴으로써 와이어(40)에 산화막이 형성되는 현상을 방지할 수 있도록 구성된다. In the wire bonding device according to the present invention, the chip pad 12 and the lead 20 are connected to both ends of the wire 40 so that the chip pad 12 of the semiconductor chip 10 and the lead 20 of the lead frame are energized. As a device for bonding to the wire 40, a phenomenon in which an oxide film is formed on the wire 40 may be prevented by injecting nitrogen gas into the end of the wire 40 and the bonding area to which the wire 40 is bonded.

이때, 종래의 와이어 본딩장치는 상기 질소가스가 액체 상태로 저장되어 있다가 낮은 온도의 기체로 상변화 되어 본딩 영역에 분사되므로, 본딩 영역에 위치하는 와이어(40) 끝단이 냉각되어 와이어볼(42)이 정상적으로 형성되지 못하게 되 고, 이에 따라 와이어(40)와 칩패드(12) 간의 결합 또는 와이어(40)와 리드(20) 간의 결합에 불량이 발생되는 경우가 발생하게 된다.At this time, in the conventional wire bonding apparatus, since the nitrogen gas is stored in a liquid state and is phase-changed into a gas having a low temperature and injected into the bonding region, the end of the wire 40 located in the bonding region is cooled to form a wire ball 42. ) Is not normally formed, and thus a failure occurs in coupling between the wire 40 and the chip pad 12 or coupling between the wire 40 and the lead 20.

본 발명은 이와 같은 문제점을 해결하기 위하여 고안된 것으로서, 질소가스가 분사되더라도 와이어(40)가 정상적으로 가열될 수 있고 이에 따라 끝단에 와이어볼(42)이 정상적으로 형성될 수 있도록, 본딩 영역으로 분사되는 질소가스를 사전에 가열시키도록 구성된다는 점에 가장 큰 특징이 있다.The present invention is designed to solve such a problem, even if the nitrogen gas is injected, the wire 40 can be normally heated so that the wire ball 42 is normally formed at the end, the nitrogen is injected into the bonding region The biggest feature is that it is configured to preheat the gas.

본 발명에 의한 와이어 본딩장치의 구성은 다음과 같다.The configuration of the wire bonding apparatus according to the present invention is as follows.

본 발명에 의한 와이어 본딩장치는 도 1에 도시된 바와 같이, 와이어(40)가 관통되도록 구성되어 상기 와이어(40)를 잡아 이동시키는 캐필러리(100)(capillary)와, 액체질소가 저장된 질소탱크(200)와, 상기 질소탱크(200)로부터 인출되는 질소가스를 가열하기 위한 가열부(400)와, 상기 가열부(400)에 의해 가열된 질소가스를 와이어 끝단으로 안내하는 와이어 가스공급관(210)과, 상기 가열부(400)의 가열온도 및 시간 등을 컨트롤하기 위한 제어부(500)를 포함하여 구성된다.As shown in FIG. 1, the wire bonding apparatus according to the present invention has a capillary 100 configured to penetrate the wire 40 to move the wire 40, and nitrogen in which liquid nitrogen is stored. A wire gas supply pipe for guiding the tank 200, the heating part 400 for heating the nitrogen gas drawn out from the nitrogen tank 200, and the nitrogen gas heated by the heating part 400 to the wire end ( 210 and a control unit 500 for controlling the heating temperature and time of the heating unit 400, and the like.

이때, 와이어 본딩 공정은 서로 다른 금속을 상호 접합시키는 공정이므로, 상호 접합되는 두 금속은 일정 온도 이상으로 가열됨이 바람직하다. 따라서 상기 반도체칩(10)과 리드(20)는 고온의 열을 발생시키는 히팅블록(30)에 안착되어, 상기 히팅블록(30)에 의해 가열되도록 구성된다.In this case, since the wire bonding process is a process of bonding different metals to each other, the two metals to be bonded to each other are preferably heated to a predetermined temperature or more. Therefore, the semiconductor chip 10 and the lead 20 are mounted on the heating block 30 for generating high temperature heat, and are configured to be heated by the heating block 30.

상기 캐필러리(100)는 와이어(40)의 인출 방향을 가이드하기 위한 구성요소로서, 도 2에 도시된 바와 같이 중심축을 따라 상기 와이어(40)가 관통될 수 있는 크기의 관통구(102)가 형성되고, 별도의 이송수단(미도시)에 의해 이송되도록 구성된다. 또한 상기 와이어(40)는 스풀(110)에 감겨진 상태로 적재되며 끝단이 상기 관통구(102)를 지나 본딩 영역(도 2에서는 칩패드(12) 상부)에 위치하게 된다. 상기 와이어(40)는 토치 또는 고주파가열기(미도시)에 의해 가열되어 상기 캐필러리(100)의 하측으로 돌출되는 끝단에 구 형상의 와이어볼(42)이 형성된다.The capillary 100 is a component for guiding the drawing direction of the wire 40, and a through hole 102 having a size through which the wire 40 can penetrate along a central axis as shown in FIG. 2. Is formed and configured to be transported by a separate transport means (not shown). In addition, the wire 40 is loaded while being wound on the spool 110, and an end thereof is positioned in the bonding region (the upper portion of the chip pad 12 in FIG. 2) past the through hole 102. The wire 40 is heated by a torch or a high frequency heater (not shown), and a spherical wire ball 42 is formed at an end protruding downward of the capillary 100.

상기 와이어(40)가 장착된 캐필러리(100)를 이송시키는 이송수단과, 상기 와이어(40) 끝단에 와이어볼(42)을 형성하기 위한 토치 또는 고주파가열기는, 종래의 와이어 본딩장치에도 동일하게 적용되고 있는바, 이에 대한 상세한 설명은 생략한다.The conveying means for conveying the capillary 100 equipped with the wire 40, and the torch or high frequency heater for forming the wire ball 42 at the end of the wire 40, the conventional wire bonding apparatus Since the same applies to, the detailed description thereof will be omitted.

상기 가열부(400)는 질소탱크(200)로부터 인출되는 차가운 질소가스를 사용자에 의해 설정된 온도로 가열할 수 있는 구조라면 어떠한 구조로도 적용될 수 있다. 예를 들어, 질소가스가 지나는 경로에 가열코일이 장착되도록 구성될 수도 있고, 고온의 유체를 상기 와이어 가스공급관(210) 일부에 접촉시키도록 구성될 수도 있다.The heating unit 400 may be applied to any structure as long as it can heat cold nitrogen gas drawn from the nitrogen tank 200 to a temperature set by a user. For example, the heating coil may be mounted in a path through which nitrogen gas passes, or may be configured to contact a portion of the wire gas supply pipe 210 with a high temperature fluid.

또한 상기 제어부(500)는, 상기 가열부(400)의 각종 가열조건을 입력하기 위한 조작패널(510)과, 상기 가열부(400)의 동작 상태를 디스플레이하는 디스플레이부(520)를 포함하여 구성된다. 따라서 사용자는 상기 디스플레이부(520)를 보면서 조작패널(510)을 조작함으로써, 자신이 원하는 상태로 상기 가열부(400)의 동작을 자유롭게 컨트롤 할 수 있게 된다.In addition, the control unit 500 includes an operation panel 510 for inputting various heating conditions of the heating unit 400 and a display unit 520 for displaying an operation state of the heating unit 400. do. Therefore, the user can operate the operation panel 510 while watching the display unit 520, so that the user can freely control the operation of the heating unit 400 in a desired state.

도 1 및 도 2에 도시된 본 발명에 의한 와이어 본딩장치와 같이 질소가스가 본딩 영역으로 분사되기 이전에 상기 질소가스를 가열하는 가열부(400)가 추가로 구비되면, 와이어(40)가 질소가스에 의해 냉각되지 아니하므로, 토치 또는 고주파가열기 등에 의해 보다 효과적으로 가열될 수 있다. 따라서 본 발명에 의한 와이어 본딩장치를 이용하면, 상기 와이어(40)의 끝단에 보다 크고 둥근 와이어볼(42)을 형성할 수 있게 되고, 이에 따라 상기 와이어(40)를 칩패드(12) 및 리드(20)에 안정적으로 본딩시킬 수 있다는 장점이 있다. 1 and 2, if the heating unit 400 for heating the nitrogen gas before the nitrogen gas is injected into the bonding region as shown in the wire bonding apparatus shown in Figure 1, the wire 40 is nitrogen Since it is not cooled by the gas, it can be heated more effectively by a torch or a high frequency heater. Therefore, when using the wire bonding apparatus according to the present invention, it is possible to form a larger and round wire ball 42 at the end of the wire 40, accordingly the wire 40 is chip pad 12 and lead There is an advantage that can be stably bonded to (20).

이와 같이 본 발명에 의한 와이어 본딩장치를 이용하면 와이어(40)를 보다 용이하게 가열시킬 수 있으므로, 금 와이어보다 용융온도가 낮은 구리 와이어 또는 구리합금 와이어를 이용하더라도 안정적으로 칩패드(12)와 리드(20)를 연결시킬 수 있게 된다. 즉, 본 발명에 의한 와이어 본딩장치를 이용하면 종래에 통상적으로 사용되어 왔던 금 와이어를 구리 와이어 또는 구리합금 와이어로 대체할 수 있으므로, 제조 원가를 현저히 절감시킬 수 있다는 장점이 있다.As such, when the wire bonding apparatus according to the present invention can be used to heat the wire 40 more easily, even if a copper wire or a copper alloy wire having a lower melting temperature than the gold wire is used, the chip pad 12 and the lead are stably. 20 can be connected. That is, using the wire bonding apparatus according to the present invention can replace the gold wire that has been conventionally used with copper wire or copper alloy wire, there is an advantage that can significantly reduce the manufacturing cost.

본 실시예에서는 본딩 영역으로 질소가스가 분사되는 경우만을 설명하고 있으나, 상기 질소가스는 와이어(40) 주변의 산소를 차단하여 상기 와이어(40)에 산화막이 형성되는 현상을 방지할 수 있다면 어떠한 불활성 가스로도 대체될 수 있다.In this embodiment, only the case where nitrogen gas is injected into the bonding region is described, but the nitrogen gas is any inert if it can prevent the formation of an oxide film on the wire 40 by blocking the oxygen around the wire 40 It can also be replaced by a gas.

또한, 본 발명에 의한 와이어 본딩장치는, 본딩 공정 시 와이어(40)에 산화막이 형성되는 현상을 방지하기 위하여, 와이어(40)가 본딩되는 영역 즉, 칩패드(12) 상으로 질소가스를 분사하는 본딩영역 가스공급관(310)을 추가로 구비할 수 있다.In addition, the wire bonding apparatus according to the present invention sprays nitrogen gas onto an area where the wire 40 is bonded, that is, the chip pad 12, in order to prevent the oxide film from being formed on the wire 40 during the bonding process. A bonding area gas supply pipe 310 may be further provided.

또한 본 발명에 적용되는 불활성가스는 질소가스로 적용될 수도 있으며, 질소가스에 일정량의 수소가스가 혼합된 혼합가스로 적용될 수도 있다.In addition, the inert gas applied to the present invention may be applied as nitrogen gas, or may be applied as a mixed gas in which a certain amount of hydrogen gas is mixed with nitrogen gas.

수소가스는 발화성을 갖는 기체로서, 상기 와이어(40)가 보다 용이하게 가열될 수 있도록 촉매 역할을 하게 된다. 즉, 상기 본딩 영역으로 일정량의 수소가스가 분사되면 상기 와이어(40)는 보다 용이하게 가열될 수 있으므로, 더욱 효과적으로 와이어볼(42)이 형성된다는 장점이 있다.Hydrogen gas is a gas having a flammability, and serves as a catalyst so that the wire 40 can be heated more easily. That is, when a predetermined amount of hydrogen gas is injected into the bonding region, the wire 40 may be heated more easily, and thus, the wire ball 42 may be more effectively formed.

이때, 상기 수소가스가 지나치게 많으면 폭발의 우려가 있고, 상기 수소가스가 너무 적으면 와이어(40)의 가열효과가 미미하게 된다. 따라서, 본딩 영역으로 공급되는 불활성가스는 90 내지 99 중량%의 질소와, 1 내지 10 중량%의 수소를 포함하도록 구성됨이 바람직하다.At this time, if the hydrogen gas is too much, there is a risk of explosion, if the hydrogen gas is too small, the heating effect of the wire 40 is insignificant. Therefore, the inert gas supplied to the bonding region is preferably configured to contain 90 to 99% by weight of nitrogen and 1 to 10% by weight of hydrogen.

상기 수소가스 역시 질소가스와 마찬가지로 수소탱크(300)에 액체상태로 저장되었다가 공급되는바, 상기 가열부(400)에 의해 가열된 후 본딩영역으로 분사되도록 구성됨이 바람직하다.Like the nitrogen gas, the hydrogen gas is also stored in the hydrogen tank 300 in a liquid state and then supplied, and is preferably configured to be heated by the heating unit 400 and then injected into the bonding region.

도 3 내지 도 5는 본 발명에 의한 와이어 본딩장치의 동작을 순차적으로 도 시하는 개략도이다.3 to 5 are schematic diagrams sequentially showing the operation of the wire bonding apparatus according to the present invention.

본 발명에 의한 와이어 본딩장치를 이용하여 와이어(40)를 칩패드(12) 및 리드(20)에 본딩시킬 때에는, 먼저 도 3에 도시된 바와 같이 캐필러리(100)를 하향으로 이동시켜 와이어볼(42)을 칩패드(12)에 압착된다. 이때 칩패드(12)에는 열이 가해지고, 키필러리에 초음파 진동이 가해져, 상기 와이어볼(42)이 칩패드(12)에 본딩된다. 이때, 상기 와이어볼(42)이 칩패드(12)에 본딩되는 영역에는 와이어 가스공급관(210) 및 본딩영역 가스공급관(310)을 통해 질소가스 및 수소가스가 공급되므로, 와이어(40) 및 칩패드(12)에 산화막이 형성되는 현상 없이 보다 안정적으로 와이어(40)와 칩패드(12)가 본딩된다.When the wire 40 is bonded to the chip pad 12 and the lead 20 using the wire bonding apparatus according to the present invention, first, as shown in FIG. 3, the capillary 100 is moved downward to move the wire. The ball 42 is pressed onto the chip pad 12. In this case, heat is applied to the chip pad 12, and ultrasonic vibration is applied to the key pillar so that the wire ball 42 is bonded to the chip pad 12. In this case, since the nitrogen gas and the hydrogen gas are supplied to the area where the wire ball 42 is bonded to the chip pad 12 through the wire gas supply pipe 210 and the bonding area gas supply pipe 310, the wire 40 and the chip are provided. The wire 40 and the chip pad 12 are more stably bonded without the phenomenon that an oxide film is formed on the pad 12.

상기 칩패드(12)에 와이어볼(42)의 본딩이 완료되면, 도 4에 도시된 바와 같이 캐필러리(100)를 상향으로 이동시킨 후, 리드(20) 측으로 이동시켜 도 5에 도시된 바와 같이 와이어(40) 루프를 형성한다. 이와 같이 와이어(40) 루프가 형성되면 상기 캐필러리(100)를 하향으로 이동시켜 와이어(40)를 리드(20)에 열압착시킴으로써 상기 와이어(40)를 리드(20)에 웨지 본딩시킨다.When the bonding of the wire ball 42 to the chip pad 12 is completed, the capillary 100 is moved upward as shown in FIG. 4, and then moved to the lead 20 side as shown in FIG. 5. As shown, a loop of wire 40 is formed. As described above, when the loop of the wire 40 is formed, the capillary 100 is moved downward to thermally compress the wire 40 to the lead 20 so that the wire 40 is wedge-bonded to the lead 20.

이때, 상기 와이어 가스공급관(210) 및 본딩영역 가스공급관(310)은 상기 캐필러리(100)와 함께 이송되므로, 상기 와이어(40)와 리드(20) 간의 본딩영역으로도 질소가스 및 수소가스가 지속적으로 공급되고, 이에 따라 와이어(40) 및 리드(20)는 산화막이 형성되는 현상 없이 안정적으로 본딩된다.In this case, since the wire gas supply pipe 210 and the bonding area gas supply pipe 310 are transferred together with the capillary 100, nitrogen and hydrogen gas may also be used as the bonding area between the wire 40 and the lead 20. Is continuously supplied, whereby the wire 40 and the lead 20 are stably bonded without the phenomenon that an oxide film is formed.

이상, 본 발명을 바람직한 실시 예를 사용하여 상세히 설명하였으나, 본 발 명의 범위는 특정 실시 예에 한정되는 것은 아니며, 첨부된 특허청구범위에 의하여 해석되어야 할 것이다. 또한, 이 기술분야에서 통상의 지식을 습득한 자라면, 본 발명의 범위에서 벗어나지 않으면서도 많은 수정과 변형이 가능함을 이해하여야 할 것이다.As mentioned above, although this invention was demonstrated in detail using the preferable embodiment, the scope of the present invention is not limited to a specific embodiment, Comprising: It should be interpreted by the attached Claim. In addition, those skilled in the art should understand that many modifications and variations are possible without departing from the scope of the present invention.

본 발명에 의한 와이어 본딩장치를 이용하면, 와이어 끝단에 불활성 가스 가열한 후 공급함으로써 와이어볼이 정상적으로 형성될 수 있고, 와이어볼에 산화막이 형성되는 현상을 방지할 수 있으며, 구리와 같이 금보다 용융점이 낮은 재질의 와이어를 칩 패드 및 리드에 안정적으로 본딩시킬 수 있다는 장점이 있다.By using the wire bonding apparatus according to the present invention, the wire ball can be normally formed by supplying after inert gas heating to the wire end, it is possible to prevent the phenomenon of forming an oxide film on the wire ball, melting point than gold, such as copper This low material wire can be reliably bonded to the chip pad and the lead.

Claims (7)

히팅블록(30)에 안착되는 반도체칩(10)의 칩패드(12)에 와이어(40)를 본딩시키는 본딩 영역으로 불활성 가스를 분사하여 와이어(40)에 산화막이 형성되는 현상을 방지하도록 구성되는 와이어 본딩장치에 있어서,Injecting an inert gas to the bonding region for bonding the wire 40 to the chip pad 12 of the semiconductor chip 10 seated on the heating block 30 to prevent the oxide film is formed on the wire 40 In the wire bonding apparatus, 상기 히팅블록(30)과 별개로 제작되어 상기 불활성 가스가 분사되기 이전에 상기 불활성 가스를 가열하는 가열부(400)와,A heating unit 400 which is manufactured separately from the heating block 30 and heats the inert gas before the inert gas is injected; 상기 히팅블록(30) 상에서 이동 가능하도록 상기 히팅블록(30)과 별개로 제작되어, 상기 가열부(400)에 의해 가열된 불활성 가스를 상기 와이어(40)의 끝단으로 공급하는 와이어 가스공급관(210)과, The wire gas supply pipe 210 is formed separately from the heating block 30 so as to be movable on the heating block 30, and supplies an inert gas heated by the heating unit 400 to the end of the wire 40. )and, 상기 히팅블록(30) 상에서 이동 가능하도록 상기 히팅블록(30)과 별개로 제작되어, 상기 가열부(400)에 의해 가열된 불활성 가스를 상기 와이어(40)가 본딩되는 칩패드(12) 상으로 공급하는 본딩영역 가스공급관(310)을 더 포함하여,Independently manufactured from the heating block 30 to be movable on the heating block 30, the inert gas heated by the heating unit 400 onto the chip pad 12 to which the wire 40 is bonded. Further comprising a bonding area gas supply pipe 310 for supplying, 구리 또는 구리 합금으로 제작되는 와이어(40)를 칩패드(12) 및 리드(20)에 본딩시킬 수 있도록 구성되는 것을 특징으로 하는 와이어 본딩장치.Wire bonding apparatus, characterized in that configured to bond the wire 40 made of copper or copper alloy to the chip pad (12) and the lead (20). 삭제delete 삭제delete 제1항에 있어서,The method of claim 1, 상기 불활성 가스는 질소인 것을 특징으로 하는 와이어 본딩장치.The inert gas is nitrogen, characterized in that the wire bonding device. 제1항에 있어서,The method of claim 1, 상기 불활성 가스는 질소와 수소의 혼합가스인 것을 특징으로 하는 와이어 본딩장치.The inert gas is a wire bonding device, characterized in that the mixed gas of nitrogen and hydrogen. 제5항에 있어서,The method of claim 5, 상기 불활성 가스는, 90 내지 99 중량%의 질소와, 1 내지 10 중량%의 수소를 포함하는 것을 특징으로 하는 와이어 본딩장치.The inert gas, 90 to 99% by weight of nitrogen, and 1 to 10% by weight of hydrogen bonding apparatus for wire. 제1항에 있어서,The method of claim 1, 상기 가열부(400)의 가열온도를 제어하는 제어부(500)를 추가로 구비하는 것을 특징으로 하는 와이어 본딩장치.Wire bonding apparatus further comprises a control unit 500 for controlling the heating temperature of the heating unit 400.
KR1020070055575A 2007-06-07 2007-06-07 Wire bonding apparatus KR100889346B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020070055575A KR100889346B1 (en) 2007-06-07 2007-06-07 Wire bonding apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070055575A KR100889346B1 (en) 2007-06-07 2007-06-07 Wire bonding apparatus

Publications (2)

Publication Number Publication Date
KR20080107610A KR20080107610A (en) 2008-12-11
KR100889346B1 true KR100889346B1 (en) 2009-03-18

Family

ID=40367792

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070055575A KR100889346B1 (en) 2007-06-07 2007-06-07 Wire bonding apparatus

Country Status (1)

Country Link
KR (1) KR100889346B1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101131449B1 (en) * 2011-02-22 2012-04-02 앰코 테크놀로지 코리아 주식회사 Set-up apparatus for wire bonding system for manufacturing of semicondutor package

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR900000969A (en) * 1988-06-02 1990-01-31 강진구 Anti-oxidation system of spool mounter of wire bonder
JPH07273138A (en) * 1994-03-31 1995-10-20 Tatsuta Electric Wire & Cable Co Ltd Wire bonding method
KR19990054212A (en) * 1997-12-26 1999-07-15 윤종용 Wire bonding device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR900000969A (en) * 1988-06-02 1990-01-31 강진구 Anti-oxidation system of spool mounter of wire bonder
JPH07273138A (en) * 1994-03-31 1995-10-20 Tatsuta Electric Wire & Cable Co Ltd Wire bonding method
KR19990054212A (en) * 1997-12-26 1999-07-15 윤종용 Wire bonding device

Also Published As

Publication number Publication date
KR20080107610A (en) 2008-12-11

Similar Documents

Publication Publication Date Title
CN100383911C (en) System for reducing oxidation of electronic devices
KR101131355B1 (en) Masking jig, substrate heating device, and coating method
US8096461B2 (en) Wire-bonding machine with cover-gas supply device
US6288376B1 (en) Method and apparatus for melting a bump by induction heating
US8313015B2 (en) Gas delivery system for reducing oxidation in wire bonding operations
JPS5832427A (en) Device and method for forming aluminum ball for ball bonding
CN100375278C (en) Semiconductor device and its mfg. method
US10022821B2 (en) Bonding method and bonding device
CN1330451C (en) Wire bonder for ball bonding insulated wire and method of using same
KR100889346B1 (en) Wire bonding apparatus
US5950100A (en) Method of manufacturing semiconductor device and apparatus for the same
US20100295180A1 (en) Wire bonding structure and manufacturing method thereof
WO2009082062A1 (en) Method of injecting molten solder into cavities of a template and apparatus for performing the same
US7938308B1 (en) Wire bonder for improved bondability of a conductive wire and method therefor
JPS60154537A (en) Method of producing semiconductor device
US20070023487A1 (en) Wire bonding method and device of performing the same
CN111448651A (en) Bonding wire manufacturing method and manufacturing device thereof
US5087590A (en) Method of manufacturing semiconductor devices
JP2011051007A (en) Ultrasonic soldering device
JP3551007B2 (en) Wire bonding method and apparatus, and wire bump forming method
KR20160004582A (en) Solder injection head apparatus, solder injection apparatus and method for attaching solder
JP5526993B2 (en) Solder supply device
KR100853272B1 (en) Injection apparatus for inert gas to prevent oxidation of copper wire
JP2012038869A (en) Wire bonding device and wire bonding method
KR101131449B1 (en) Set-up apparatus for wire bonding system for manufacturing of semicondutor package

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20130311

Year of fee payment: 5

FPAY Annual fee payment

Payment date: 20140311

Year of fee payment: 6

FPAY Annual fee payment

Payment date: 20150311

Year of fee payment: 7

FPAY Annual fee payment

Payment date: 20160311

Year of fee payment: 8

FPAY Annual fee payment

Payment date: 20170313

Year of fee payment: 9

FPAY Annual fee payment

Payment date: 20180312

Year of fee payment: 10

FPAY Annual fee payment

Payment date: 20190311

Year of fee payment: 11

FPAY Annual fee payment

Payment date: 20200311

Year of fee payment: 12