KR101125031B1 - Substrate supporting means including focus ring for aligning substrate and Method for aligning substrate using the same - Google Patents

Abstract

The present invention discloses a substrate mounting means capable of aligning a substrate in the process of seating the substrate on the substrate support and an alignment method using the same. Substrate mounting means of the present invention, the substrate support for placing the substrate; It is installed on the periphery of the substrate stabilizer, and includes a focus ring having a gas injection port for aligning the substrate.

According to the present invention, since the gas is continuously injected from the focus ring installed on the periphery of the electrostatic chuck in the process of placing the substrate can be aligned to the position of the substrate. In addition, since the substrate can be accurately positioned on top of the electrostatic chuck, it is possible to prevent the damage of the electrostatic chuck and extend the service life of the electrostatic chuck. In addition, the maintenance rate of the electrostatic chuck can be reduced, thereby improving the equipment operation rate.

Board, Align

Description

Substrate supporting means including focus ring for aligning substrate and method for aligning substrate using the same}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus for manufacturing a semiconductor element, and more particularly, to a substrate processing apparatus for aligning a substrate placed in a substrate placing means through gas injection.

In general, to manufacture a semiconductor device, a thin film deposition process for depositing a thin film of a specific material on a substrate, a photolithography process for exposing or hiding selected areas of the thin films using a photosensitive material, and removing the thin film of the selected area as desired An etching process for patterning and the like must be performed, and each of these processes is performed in a substrate processing apparatus designed for an optimal environment for the process.

Recently, a substrate processing apparatus for converting a raw material into a plasma state to perform etching or thin film deposition on a substrate has been widely used.

1 is a diagram schematically showing the configuration of such a substrate processing apparatus 10. Accordingly, the substrate processing apparatus 10 may include a chamber 11 forming a reaction space, an electrostatic chuck 12 positioned inside the chamber 11, and having a substrate s placed on an upper surface thereof, of the chamber 11. The RF electrode 15 which seals the upper part and is connected to the RF power source 17, a gas distribution plate 14 installed at the lower part of the RF electrode 15 to inject a raw material to the upper part of the electrostatic chuck 12, the RF It is provided through the central portion of the electrode 15 and the raw material supply pipe 16 for supplying the raw material, and an exhaust pipe 18 connected to the lower portion of the chamber 11 for discharging the residual material.

Although not shown, the electrostatic chuck 12 typically includes an aluminum body and an insulating plate installed on the upper portion of the body, and the insulating plate is provided with a DC electrode for generating an electrostatic force to fix the substrate s.

The focus ring 13 is coupled to the periphery of the electrostatic chuck 12. The focus ring 13 is usually made of ceramic and extends the region of the plasma formed on the electrostatic chuck 12 to the outside of the substrate s so that the entire surface of the substrate s can be included in the uniform plasma region. Play a role.

The electrostatic chuck 12 is moved up and down between the reference position and the process position where the substrate exchange is made, for this purpose, the drive shaft 19 is connected to the lower central portion of the electrostatic chuck 12.

The electrostatic chuck 12 is also provided with a lift pin 21 for elevating the substrate s with respect to the electrostatic chuck 12 for substrate exchange. The lift pin 21 is inserted into a pinhole formed in the electrostatic chuck 12, and a lower end thereof is connected to the pin lifting means 22.

Therefore, as shown in FIG. 2, when the pin elevating means 22 is raised, the lift pin 21 pushes up the substrate s to separate it from the electrostatic chuck 12. In addition, when the pin lifting means 22 is lowered, the substrate s placed on the upper end of the lift pin 21 is seated on the upper surface of the electrostatic chuck 12.

However, in the process of placing the substrate s in the electrostatic chuck 12, the alignment of the substrate s often occurs. Such a phenomenon may occur due to an operation error or a teaching failure of a transfer robot (not shown) that transfers the substrate s, or may be caused by vibration generated while the lift pin 21 descends. In addition, such misalignment may occur due to vibration generated in the substrate processing apparatus.

In this case, an inclined surface was formed on the outer surface of the focus ring 13. However, since the diameter of the outer surface of the focus ring 13 is much larger than that of the substrate s, the focus ring 13 may be formed. It does not prevent misalignment that occurs inside the slope.

When the substrate s is not seated in this manner, plasma arcing may occur on the exposed top surface of the electrostatic chuck 12, resulting in damage to the electrostatic chuck 12, thereby increasing the service life of the electrostatic chuck 12. There is a problem that is shortened.

Although not shown, grooves are formed on the top of the electrostatic chuck 12 to inject and flow helium gas during the process. If the substrate is misaligned, helium gas flows out to the top of the substrate during the process to worsen the process uniformity. Cause problems such as.

SUMMARY OF THE INVENTION The present invention has been made to solve this problem, and the object of the present invention is to increase the service life of the electrostatic chuck by preventing the electrostatic chuck from being damaged.

Substrate mounting means according to the present invention for achieving the above object, the substrate support for placing the substrate; And a focus ring installed at a periphery of the substrate stabilizer and having a gas injection hole for substrate alignment.

In the substrate mounting means as described above, the gas injection port is characterized in that formed in the direction of 30 to 60 degrees to the outside of the focus ring with respect to a line perpendicular to the upper surface of the substrate holder.

In the substrate mounting means as described above, the focus ring has a first surface formed in the same direction as the upper surface of the substrate stabilizer, and a second surface protruding along the outer edge of the first surface, the gas injection port is It is formed on the first surface.

In the substrate mounting means as described above, the gas injection port is characterized in that formed on the outer side than the edge of the substrate on the basis of the state in which the substrate is placed in place.

In the substrate mounting means as described above, a plurality of gas injection ports are formed, and the focus ring has a first flow passage therein for communicating with each of the plurality of gas injection holes, while supplying gas to the first flow passage. The gas supply port is characterized in that formed in the substrate mounting means or the focus ring.

In the substrate set-up means as described above, a second flow passage communicating with the first flow path through the gas supply port of the focus ring is formed inside the substrate set.

In the substrate mounting means as described above, the plurality of gas injection port of the focus ring is characterized in that the denser is formed away from the gas supply port.

In the substrate mounting means as described above, the plurality of gas injection port of the focus ring is characterized in that the larger the diameter away from the gas supply port.

The focus ring for achieving the above object is installed on the periphery of the substrate settlement for placing the substrate, it characterized in that it comprises a gas injection port for substrate alignment.

In the focus ring as described above, the gas injection port is formed in a direction of 30 to 60 degrees outward with respect to a line perpendicular to the upper surface of the substrate support.

Substrate processing apparatus according to the present invention for achieving the above object, the chamber forming a reaction space; A substrate support stand installed in the chamber and configured to hold a substrate; A focus ring installed at a periphery of the substrate stabilizer and having a gas injection hole for substrate alignment; And gas supply means for supplying a gas for alignment to the gas injection port of the focus ring.

In the substrate processing apparatus as described above, the focus ring has a first surface in the same direction as the upper surface of the substrate stabilizer, and the gas injection port is formed on the first surface, but the substrate is placed in the correct position. It is characterized in that formed on the outer side than the edge of the substrate as a reference.

In the substrate processing apparatus as described above, the gas supply means, the first passage formed in the focus ring and in communication with the gas injection port; A second flow path formed in the substrate stabilizer and communicating with the first flow path of the focus ring; And a gas supply pipe connecting the second flow path of the substrate stabilizer and an external gas storage part.

In the substrate processing apparatus as described above, a second gas supply pipe is branched to the gas supply pipe outside the chamber, and the second gas supply pipe is connected to the chamber or an exhaust pipe connected to the chamber.

Substrate alignment method for achieving the above object, the substrate support in which the lift pin is coupled to the substrate, the substrate processing apparatus including a focus ring which is provided in the periphery of the substrate support and has a gas injection port for substrate alignment A method of aligning the method, the method comprising: placing a substrate on an upper end of the lift pin protruding to an upper portion of the substrate stabilizer; A second step of lowering the substrate while injecting the alignment gas through the gas injection port; And mounting the substrate on an upper portion of the substrate stabilizer.

In the substrate alignment method as described above, in the second step, the alignment gas is sprayed outwardly of the focus ring with an angle of 30 to 60 degrees with respect to a line perpendicular to the upper surface of the substrate support.

In the substrate alignment method as described above, after the third step, a fourth step of inspecting the alignment state of the substrate; And if it is determined in the fourth step that the alignment is poor, the fifth step of injecting the alignment gas again.

According to the present invention, since the alignment gas is continuously injected from the focus ring installed at the periphery of the electrostatic chuck in the process of placing the substrate it is possible to align the substrate to the correct position through this.

In addition, since the substrate can be accurately positioned on top of the electrostatic chuck, it is possible to prevent the damage of the electrostatic chuck and extend the service life of the electrostatic chuck. In addition, the maintenance rate of the electrostatic chuck can be reduced, thereby improving the equipment operation rate.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

3 is a view showing a substrate processing apparatus 100 according to an embodiment of the present invention, wherein the substrate processing apparatus 100 is located inside the chamber 110 and the chamber 110 forming a reaction space. An electrostatic chuck 120 which encloses the substrate s on the upper surface of the chamber 110 and seals an upper portion of the chamber 110 and is installed below the RF electrode 150 to which the RF power source 170 is connected. Gas distribution plate 140 for injecting the raw material to the upper portion of the 120, the raw material supply pipe 160 for supplying the raw material is installed through the central portion of the RF electrode 150, the chamber for discharging the residual material ( The exhaust pipe 180 is connected to the lower portion of the 110. The exhaust pipe 180 is provided with a vacuum pump 190.

Although not shown, the electrostatic chuck 120 generally includes an aluminum body and an insulation plate installed on the upper portion of the body, and the insulation plate includes a DC electrode that generates an electrostatic force to fix the substrate s.

The focus ring 130 is coupled to the periphery of the electrostatic chuck 120. In the present invention, the gas injection port 131 is formed in the focus ring 130 and the gas is placed when the substrate s is placed in the electrostatic chuck 120. It is characterized in that the alignment gas is injected through the injection hole 131 to align the substrate (s). In other words, the gas injection port 131 is formed in the vertically corresponding area in the region close to the end and the end of the substrate s so that the substrate s can be placed in the correct position, and the injection angle of the gas injection port 131 is formed. The gas flows into the inclined plane of the focus ring 130 positioned at the edge of the substrate s or at the end of the substrate s, thereby aligning the substrate s.

The focus ring 130 has a structure in which an inclined surface 134 protrudes upwardly on the outer side of the flat upper surface 133 as an annular opening having a central portion as shown in a partially cut perspective view of FIG. 4.

In addition, a plurality of gas injection holes 131 are formed on the upper surface 133 of the focus ring 130, and a first flow passage 132 communicating with the gas injection holes 131 is formed therein. In addition, a gas supply port 136 for supplying gas to the first flow passage 132 is formed at the bottom.

Although only one gas supply port 136 may be formed, a plurality of gas supply holes 136 may be formed in order to uniformize the injection pressure in each gas injection port 131. In this case, each gas supply port 136 is preferably formed symmetrically with respect to the center of the focus ring 130.

And each gas injection port 131 is preferably formed to be inclined toward the outer side of the focus ring 130. Specifically, the gas injection direction (see angle A in Fig. 5) of the gas injection port 131 is preferably in the range of 30 to 60 degrees outward with respect to the vertical line. In general, since the inclined surface 134 of the focus ring 130 is formed within the angle range, it is preferable that the inclined surface 134 of the gas injection port 131 is formed at the same angle.

In addition, the focus ring 130 may be formed in the electrostatic chuck 120 instead of the focus ring 130 as shown in FIG. 9. In addition, the position of the gas injection port 131 is located at a point corresponding to the vertical at the end of the substrate s when the substrate s is correctly aligned.

In addition, when the diameter of the upper surface of the electrostatic chuck 120 on which the outer surface of the flat upper surface 133 is flat on the focus ring 130 and the substrate s is set to L2 and the diameter of the substrate s to L3, It is preferable that L1> L3> L2. In addition, the gas injection port 131 may be formed outside the position where the edge of the substrate s is placed on the basis of the state in which the substrate s is placed at the correct position.

On the other hand, the gas injection port 131 may be composed of a plurality of holes, as shown, may be configured in the form of a plurality of slits.

In addition, as shown in FIG. 6, as the distance from the gas supply port 136 increases, the distance between the gas injection ports 131 is preferably closer. Since the gas pressure is lowered farther from the gas supply port 136, the gas can be injected at a uniform pressure as a whole by densifying the intervals.

As another method, the distance between the gas injection holes 131 is the same, but as the distance from the gas supply holes 136 increases, the diameter of the gas injection holes 131 may be increased.

On the other hand, the electrostatic chuck 120 is formed with a second flow path 122 for supplying gas to the gas supply port 136 of the focus ring 130. The second passage 122 is connected to the gas supply unit 220 which is located outside the chamber 110 through the first supply pipe 211.

The flow rate control unit 230 is installed between the gas supply unit 220 and the chamber 110 in the first supply pipe 211. In addition, in the first supply pipe 211 between the flow rate control unit 230 and the chamber 110, the second supply pipe 212 is branched and connected to the exhaust pipe 180.

A third supply pipe 213 connected to the bottom or bottom of the chamber 110 may be branched to the second supply pipe 212.

The second supply pipe 212 may be directly connected to the bottom or bottom of the chamber 110 without being connected to the exhaust pipe 180.

The first to third supply pipes 211, 212, 213 are provided with various valves for controlling the gas supply. For example, the first supply pipe 212 is provided with a first valve V1 between the gas supply unit 220 and the flow rate control unit 220, and is provided between the flow rate control unit 220 and the chamber 110. Install 2 valve (V2) and 3rd valve (V3). The second supply pipe 212 is branched between the second valve V2 and the third valve V3.

A fourth valve V4 and a fifth valve V5 are installed in the second supply pipe 212, and at this time, the third supply pipe 213 is branched between the fourth valve V4 and the fifth valve V5. . The sixth valve V6 is installed in the third supply pipe 213.

Hereinafter, a process of aligning the substrate s according to the exemplary embodiment of the present invention will be described with reference to the flowchart of FIG. 7.

First, the substrate s loaded from the outside is placed on the upper end of the lift pin 21 as shown in FIG. 8.

In this state, gas is not injected through the gas injection port 131, and for this purpose, the third valve V3 is locked to block the first supply pipe 211. However, in order to prevent sudden flow due to valve opening and closing, in such a standby state, the fourth valve V4 and the sixth valve V6 are opened to discharge gas to the lower portion of the chamber 110 or the fourth valve V4 and the fifth valve. The valve V5 is opened to discharge gas to the exhaust pipe 180. (ST11)

Then gas is sprayed to align the substrate s. It is preferable that the kind of gas is non-reactive, such as N2 and Ar. In this case, the second supply pipe 212 or the third supply pipe 213 is blocked and supplies gas to the first flow path 132 of the focus ring 130 through the first supply pipe 211 and the second flow path 122. The supplied gas is diffused in the first passage 132 and then injected upward through the plurality of gas injection holes 131.

The injected gas forms an air curtain along the periphery of the substrate s.

The gas supply amount is preferably controlled electronically through the flow control unit 230, it may be manually controlled by installing a needle valve (V2). (ST12)

As described above, the substrate s is lowered by using the pin elevating means 22 at the same time or after the start of the gas injection. When the edge of the descending substrate s is out of position, it receives a constant pressure from the air curtain formed by the injected gas and returns to the position. (ST13)

When the lowering substrate s is seated on the upper surface of the electrostatic chuck 120, the gas injection is stopped. At this time, it is preferable to close the third valve (V3) and discharge the alignment gas to the lower portion of the chamber 110 or the exhaust pipe 180 through the second supply pipe 212 or the third supply pipe (213). (ST14, ST15)

Next, the alignment state of the substrate s placed on the electrostatic chuck 110 is inspected. The electrostatic chuck 110 fixes the substrate s by the electrostatic force generated by the built-in DC electrode, the electrostatic force is different from the reference value when the substrate s is not seated in place. Therefore, the alignment state of the substrate s can be confirmed by measuring the electrostatic force.

As another method, the alignment state of the substrate s may be confirmed by comparing the supply pressure of helium supplied through the groove or the injection hole formed on the upper surface of the electrostatic chuck 110 with a reference value. (ST16)

If it is determined in step ST16 that the alignment state of the substrate s is good, the subsequent process is performed. (ST17)

If the alignment of the substrate s is not good at step ST16, that is, if misalignment of the substrate s and the electrostatic chuck 110 occurs, the chucking of the substrate s and the electrostatic chuck 110 is completed. In this case, the injection pressure of the helium gas, which is the cooling gas supplied through the injection hole or the groove, and the electrostatic force generated from the DC electrode embedded in the electrostatic chuck 110 are not accurately measured. Accordingly, the helium gas injection and the application of the DC voltage are blocked, and the alignment gas is injected again through the gas injection port 131 to align the substrate s. (ST18)

After spraying for a certain period of time, the gas injection must be stopped again and the substrate alignment must be inspected. (ST15, ST16)

Meanwhile, the substrate processing apparatus including the electrostatic chuck generating the electrostatic force has been described above, but the present invention may be applied to the substrate processing apparatus including the substrate settling means that does not generate the electrostatic force.

In addition, in the above, the electrostatic chuck according to the embodiment of the present invention has been described with reference to a semiconductor manufacturing apparatus. However, the present invention provides a liquid crystal display (LCD), a field emission display (FED), and an organic light emitting diode. The present invention can also be applied to a device for manufacturing a flat panel display device such as an organic light emitting diode device (OLED). It can also be applied to a device for manufacturing a substrate for a solar cell.

Furthermore, the present invention is not limited to the above-described embodiments and may be modified or modified in various forms. And if the modified or modified embodiment includes the technical spirit or equivalent configuration of the present invention described in the claims to be described later of course belongs to the scope of the present invention.

1 is a schematic configuration diagram of a substrate processing apparatus using plasma

Figure 2 is a view showing the lifting structure of the lift pin for placing the substrate

3 is a schematic configuration diagram of a substrate processing apparatus according to an embodiment of the present invention;

4 is a partially cutaway perspective view of a focus ring according to an embodiment of the present invention;

5 illustrates the size of a focus ring.

6 is a plan view of a focus ring according to an embodiment of the present invention;

7 is a flowchart illustrating a substrate alignment process according to an embodiment of the present invention.

8 is a view illustrating a process of placing a substrate

9 is a cross-sectional view of the substrate mounting means according to an embodiment of the present invention.

* Description of the symbols for the main parts of the drawings *

100: substrate processing apparatus 110: chamber

120: electrostatic chuck 122: second euro

130: focus ring 131: gas injection port

132: first euro 133: upper surface

134: slope 136: gas supply port

140: gas distribution plate 150: RF electrode

180: exhaust pipe 190: pump

211,212,213: 1st, 2nd, 3rd supply pipe

220: gas supply unit 230: flow rate control unit

Claims (17)

A substrate holder for placing a substrate; And A focus ring installed at a periphery of the substrate stabilizer and including a plurality of gas injection ports for aligning the substrate and a gas supply port communicating with each of the plurality of gas injection ports to supply gas; Including, The plurality of gas ejection spheres are formed denser as the distance away from the gas supply port. delete delete The method of claim 1, The gas injection port is a substrate mounting means, characterized in that formed on the outer side than the edge of the substrate on the basis of the state in which the substrate is placed in place. The method of claim 1, And a first flow passage communicating with each of the plurality of gas injection ports is formed in the focus ring. The method of claim 5, Gas supply means for supplying gas for alignment to the plurality of gas injection ports of the focus ring; A second flow path formed in the substrate stabilizer and communicating with the first flow path; And A gas supply pipe connecting the second flow path to the substrate stabilizer and an external gas storage part; Substrate settlement means comprising a. delete delete delete The method of claim 1, And the gas injection port is formed in a direction of 30 to 60 degrees outward of the focus ring with respect to a line perpendicular to the upper surface of the substrate holder. delete delete delete delete A focus set including a substrate stabilizer coupled to a lift pin, a gas supply port installed at a periphery of the substrate stabilizer, and a plurality of gas injection ports for aligning the substrate and a gas supply port communicating with each of the plurality of gas injection ports to supply gas; In the substrate processing apparatus including a ring, wherein the plurality of gas injection port is formed densely away from the gas supply port, Method for aligning the substrate, A first step of placing a substrate on an upper end of the lift pin protruding to an upper portion of the substrate stabilizer; A second step of lowering the substrate while injecting a gas for alignment through the gas injection port; And A third step of mounting the substrate on an upper portion of the substrate stabilizer; Substrate alignment method comprising a. The method of claim 15, In the second step, the alignment gas is sprayed at an angle of 30 to 60 degrees to the outside of the focus ring with respect to the line perpendicular to the upper surface of the substrate support. The method of claim 15, After the third step, A fourth step of inspecting an alignment of the substrate; A fifth step of injecting the alignment gas again when it is determined that the alignment is poor in the fourth step; Substrate alignment method comprising a.

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