KR101109075B1 - Apparatus and method for treating substrate - Google Patents

Abstract

The present invention discloses a substrate processing apparatus, comprising: a process chamber in which a substrate processing process is performed; A spin chuck provided in the process chamber and chucking a substrate; A drain cup provided in the process chamber and accommodating the processing liquid such that the processing liquid scattered from the substrate does not splash on the inner surface of the process chamber; And a rotation drive unit provided at an outer lower portion of the process chamber and rotating the spin chuck.

Spin chuck, rotary axis, supercritical, housing

Description

Substrate processing apparatus and method {APPARATUS AND METHOD FOR TREATING SUBSTRATE}

The present invention relates to a substrate processing apparatus and method, and more particularly, to a substrate processing apparatus and method for performing a substrate processing process using a supercritical fluid.

As the design rules of semiconductor devices decrease, there is a need for a deep and narrow contact forming process having a high aspect ratio and accompanying etching or cleaning processes. In the case where a wafer having a structure having such a large aspect ratio is formed, a predetermined processing step, for example, etching, cleaning, drying, or the like, is performed, when a normal wet process is used, a different film quality on the surface of the wafer is used. Defects due to damage and water spots frequently occur. In addition, in the etching process for removing a mold oxide film used as a sacrificial film when forming a storage node of a capacitor, for example, a capacitor having a relatively large thickness, the mold oxide film may be formed due to the high surface tension of pure water when the wet etching process is used. After this removal, the storage node may collapse.

In an effort to solve this problem, methods for etching, cleaning or drying a predetermined film on a wafer using carbon dioxide in a supercritical state as a solvent have been proposed.

The present invention is to provide a substrate processing apparatus and method capable of improving the productivity of the substrate processing process.

The present invention is to provide a substrate processing apparatus and method capable of performing a chemical treatment process and a supercritical drying process in a single chamber.

It is an object of the present invention to provide a substrate processing apparatus and method capable of minimizing damage inside a chamber by chemicals used in substrate processing.

 The objects of the present invention are not limited thereto, and other objects not mentioned can be clearly understood by those skilled in the art from the following description.

In order to achieve the above object, a substrate processing apparatus according to the present invention includes a process chamber in which a substrate processing process is performed; A spin chuck provided in the process chamber and chucking a substrate; A drain cup provided in the process chamber and accommodating the processing liquid such that the processing liquid scattered from the substrate does not splash on the inner surface of the process chamber; And a rotation drive unit provided at an outer lower portion of the process chamber and rotating the spin chuck.

According to an embodiment of the present invention, the drain cup is positioned between the process chamber and the substrate and is spaced apart from the process chamber.

According to an embodiment of the present invention, the drain cup may include a ceiling positioned adjacent to an upper surface of the process chamber to face a processing surface of the substrate; A sidewall portion extending from an edge of the ceiling and positioned adjacent to a side within the process chamber; And a bottom portion extending from the side wall portion and positioned adjacent to a bottom surface in the process chamber.

According to an embodiment of the present invention, the bottom portion provides a receiving space in which the treatment liquid scattered to the ceiling portion and the side wall portion are collected at a lower height than the substrate.

According to an embodiment of the invention, the drain cup is formed extending from the bottom portion, and further comprises an extension surrounding the edge of the side of the spin chuck and the upper surface on which the substrate is located.

According to an embodiment of the present invention, the substrate processing apparatus further includes an injection nozzle for injecting the supercritical and processing liquid into the center of the substrate.

According to an embodiment of the present invention, the ceiling is formed with a central hole so that the injection nozzle for injecting the supercritical and processing liquid into the center of the substrate.

According to an embodiment of the present invention, the drain cup further includes a drain pipe connected to the bottom part through the process chamber to discharge the processing liquid contained in the bottom part out of the process chamber.

According to an embodiment of the present invention, the spin chuck includes an exhaust passage having an exhaust hole through which gas inside the process chamber exits on an upper surface facing the bottom surface of the substrate.

According to an embodiment of the present invention, the rotary drive unit, one end is coupled to the spin chuck, the other end is exposed to the outside of the process chamber, and the rotating shaft is installed on the exposed outer circumferential surface; A driving magnetic body provided to face the driven magnetic body in a radial direction of the rotation axis; And a driving member for rotating the driving magnetic body about the rotation axis.

According to an embodiment of the present invention, the rotation shaft further includes an exhaust passage connected to the exhaust passage formed in the spin chuck.

According to an embodiment of the present invention, the process chamber includes an upper structure having a side and an upper surface, and a lower structure having a bottom surface on which the spin chuck is positioned, wherein the lower structure includes: loading and unloading a substrate; Can be moved up and down for maintenance work.

Substrate processing apparatus of the present invention for achieving the above object is a process chamber that the substrate processing process is in progress and including an upper structure and a lower structure; A spin chuck provided in the process chamber and chucking a substrate; A rotating shaft for transmitting rotational force to the spin chuck through the lower structure; An injection nozzle installed through the upper structure of the process chamber and configured to inject a supercritical and processing liquid into a center of the substrate; And a drain cup installed inside the process chamber and configured to receive a treatment liquid sprayed onto the substrate through the injection nozzle and to be scattered to the outside.

According to an embodiment of the present invention, the spin chuck is formed with an exhaust passage having an exhaust hole for the exhaust of the supercritical fluid supplied into the process chamber, the rotating shaft has a hollow structure to be connected to the exhaust passage Is done.

According to an embodiment of the present invention, the drain cup is installed spaced apart from the process chamber.

The substrate processing method of the present invention for achieving the above object is to supply a processing liquid to a process chamber loaded with a spin chuck substrate, and to process the substrate with the processing liquid while rotating the substrate; The processing liquid scattered from the substrate is received in a drain cup installed in the process chamber and then drained to the outside.

According to an embodiment of the present invention, after treating the substrate with the treatment liquid, a supercritical fluid is supplied to the process chamber, and the substrate is treated with the supercritical fluid while the substrate is rotated; The supercritical fluid supplied to the process chamber is exhausted to the outside through an exhaust passage formed in the spin chuck.

According to the present invention, since the substrate treatment process (cleaning, etching) and the supercritical drying process by chemical (chemical liquid) are performed in a single chamber, the substrate treatment efficiency can be improved.

In addition, according to the present invention it is possible to prevent the chemical (chemical liquid) provided as a substrate from contacting the inner surface of the process chamber to minimize the contamination of the process chamber by the chemical.

Moreover, according to this invention, process time can be shortened and productivity of a board | substrate can be improved.

In addition, according to the present invention, it is possible to prevent the generation of particles due to friction / wear of the rotating support member such as a bearing.

Hereinafter, a substrate processing apparatus and a method according to a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings. First, in adding reference numerals to the components of each drawing, it should be noted that the same reference numerals are assigned to the same components as much as possible, even if shown on different drawings. In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.

(Example)

The cleaning and etching process of the substrate may include, for example, a chemical solution process, a rinse process, and a drying process. The chemical liquid on the substrate treated in the chemical liquid process is rinsed with deionized water, the deionized water on the substrate treated in the rinse process is replaced by isopropyl alcohol (IPA), and the residual isopropyl alcohol (IPA) on the substrate is dried. Can be dried by a supercritical fluid.

The substrate treating apparatus according to the present invention is used in an apparatus for carrying out a chemical liquid process, a rinse process and a drying process using a supercritical fluid in one chamber. This will be described in detail below. In this case, the substrate carried into the substrate processing apparatus is a substrate on which the cleaning and etching process is to be performed.

1 is a view showing an example of a substrate processing apparatus according to the present invention.

1 and 3, the substrate processing apparatus according to the present invention includes a process chamber 100, a processing fluid supply unit 200, a drain cup 900, a spin chuck 400, an exhaust unit 300, And a rotation drive unit 500.

The process chamber 100 is a cylindrical upper structure (hereinafter referred to as a process chamber 120) having an open bottom, and a lower structure (hereinafter referred to as a lower wall 140) that opens and closes an opened lower part of the process chamber 120. Include. An injection nozzle 123 for injecting a processing fluid to the center of the substrate is installed in the upper wall 122 of the processing chamber 120, and a processing fluid supply unit 200 is connected to the injection nozzle 123. In addition, a stepped step surface 124-2 having a step shape is formed on the inner surface 124-1 of the side wall 124 of the processing chamber 120.

The lower wall 140 has a plate shape and is accommodated in a space where the step surface 124-2 of the processing chamber 120 is in contact with each other to close the open lower portion of the processing chamber 120. The sealing member 160 is installed at the edge of the upper surface 142 of the lower wall 140. The sealing member 160 has a stepped surface 124-2 of the processing chamber 120 and an upper surface 142 edge of the lower wall 140 when the lower wall 140 closes the open lower portion of the processing chamber 120. Seal between. In the central region of the lower wall 140 is formed a through hole 146 into which the rotation shaft 510 is inserted.

The housing 520 is fixedly installed on the lower surface 144 of the lower wall 140, and the housing 520 is moved up and down by the elevating unit 600. When loading the substrate into the process chamber 100 and unloading the substrate from the process chamber 100, the lower wall 140 is lowered by the elevating unit 600, and the lower wall 140 is elevated by the elevating unit for processing. 600).

2 is a diagram for explaining the configuration of a processing fluid supply unit.

Referring to FIG. 2, the processing fluid supply unit 200 supplies a liquid processing fluid to the process chamber 100 through the first supply line 210, and supplies the second supply line 240 to the process chamber 100. Supercritical dry fluid.

One end of the first supply line 210 is connected to the injection nozzle 123, and the other end of the first supply line 210 is branched into a plurality of branch lines 212, 214, 216, and 218. The liquid chemical supply source 222 is connected to the first branch line 212, and a valve 213 is provided on the first branch line 212 to open and close the flow of the chemical liquid. A liquid deionized water (DIW) source 224 is connected to the second branch line 214, and a valve 215 is provided on the second branch line 214 to open and close the flow of deionized water. A third isopropyl alcohol (IPA) source 226 is connected to the third branch line 216, and a valve 217 is provided on the third branch line 216 to open and close the flow of isopropyl alcohol. The fourth branch line 218 is connected to a liquid carbon dioxide (CO ₂ (1)) source 228, and the fourth branch line 218 is provided with a valve 219 for opening and closing the flow of liquid carbon dioxide.

The heater 232 and the pump 234 may be installed on the first supply line 210. The heater 232 may heat the liquid processing fluid supplied to the process chamber 100 to a process temperature, and the pump 234 pressurizes the liquid processing fluid supplied to the process chamber 100 to process chamber 100. The inside can be kept at the process pressure.

The chemical liquid supplied from the chemical liquid source 222 may use various kinds of chemical liquids. For example, the chemical liquid may be SPM (Sulfuric Peroxide Mixture), a mixture of sulfuric acid (H ₂ SO ₄ ) and hydrogen peroxide (H ₂ O ₂ ), or hydrogen fluoride (HF) for etching an oxide film on a substrate. ) May be used.

SPM is used to remove the hardened layer on the surface of the photoresist after the ion implantation process. For efficient removal of the hardened layer, SPM is higher than the break point (180 ° C) at room temperature / atmospheric pressure It must be heated to a high temperature of 200 ° C. or higher. However, since the S.P.M evaporates before reaching the process temperature (200 ° C) in the normal temperature / atmospheric pressure, there is a limit to increasing the process temperature of the S.P.M in the normal temperature / atmospheric pressure. However, in the present invention, since the S.P.M is supplied to the process chamber 100 by being pressurized to a pressure higher than the normal pressure by the pump 234, the break point of the S.P.M at room temperature / atmospheric pressure ( Heating to a high temperature of 200 ° C. or higher, which is higher than 180 ° C.).

One end of the second supply line 240 is connected to the injection nozzle 123 of the process chamber 100, and the other end of the second supply line 240 is connected to the mixer 250. The mixer 250 receives liquid carbon dioxide, a surfactant, and a cosolvent, and mixes them under a predetermined process temperature / pressure to generate carbon dioxide (scCO ₂ ) in a supercritical state. Supercritical carbon dioxide produced in the mixer 250 is supplied to the injection nozzle through the second supply line 240. The heater 242, the pump 244, and the valve 246 may be installed on the second supply line 240.

The liquid carbon dioxide is supplied to the mixer 250 via the liquid carbon dioxide supply line 218a branched from the fourth branch line 218, and the surfactant is supplied to the surfactant source 262 through the surfactant supply line 261-1. Co-solvent is supplied from the co-solvent source 264 through the co-solvent supply line (263-1). A valve 218a-2 is installed in the liquid carbon dioxide supply line 218a, a valve 261-2 is installed in the surfactant supply line 261-1, and a valve is provided in the cosolvent supply line 263-1. 263-2 may be installed.

3 is a view illustrating a process chamber structure of FIG. 1. 4 is a view showing that the chemical liquid scattered from the substrate is discharged after being received in the drain cup.

3 and 4, the drain cup 900 is located in the process chamber 100. The drain cup 900 has a structure capable of accommodating the processing fluid so that the processing fluid scattered from the substrate W (mainly, the processing fluid used in the chemical liquid process and the rinse process) does not splash on the inner surface of the process chamber 100. In particular, the drain cup 900 is located between the process chamber 100 and the substrate (W), it is preferably installed in a state spaced 2mm from the process chamber 100. Therefore, the drain cup 900 is installed in a state spaced apart from the process chamber 100 by a plurality of support pins 901. Because, in the drying process, the inside of the process chamber 100 maintains a high pressure. When the drain cup 900 is installed to be in close contact with the inner wall of the process chamber 100, pressure is applied only to one surface, and damage to the drain cup 900 is caused. (Stress) may be generated, but when the drain cup 900 is spaced apart from the inner wall of the process chamber 100, pressure is applied to the entire surface to cancel the damage due to high pressure (stress).

The drain cup 900 includes a ceiling 910, a side wall 920, a bottom 930, and an extension 940. The ceiling 910 is positioned adjacent to the top surface in the process chamber 100 to face the processing surface of the substrate W. As shown in FIG. The center hole 912 is formed in the center of the ceiling 910 so that the injection nozzle 123 can be located.

The side wall portion 920 extends from an edge of the ceiling 910 and is positioned adjacent to a side surface in the process chamber 100.

The bottom portion 930 extends from the sidewall portion 920 and is positioned adjacent to the bottom surface of the process chamber 100. The bottom part 930 is positioned at a lower level than the substrate to provide a receiving space 932 in which the treatment liquid scattered to the ceiling part 910 and the side wall part 920 collects.

The extension part 940 is formed to extend from the bottom part 930 and is positioned to surround the edge of the side surface of the spin chuck 400 and the upper surface on which the substrate W is located. That is, the extension part 940 is a part for receiving the processing fluid scattered close to or flowing from the substrate. Here, care should be taken not to overlap the extension portion 940 with the substrate (W). If overlapping with the substrate W, it may collide during loading / unloading of the substrate.

Meanwhile, a drain pipe 950 may be installed in the process chamber 100 to discharge the processing fluid contained in the bottom 930 of the drain cup 900 out of the process chamber 100. The drain pipe 950 penetrates the side surface of the process chamber 100 and is connected to the bottom part 930. Although not shown, the drain pipe 950 is omitted, and an outlet is formed at the bottom of the process chamber 100 so that the treatment fluid collected at the bottom 930 flows to the bottom of the process chamber, and the process chamber bottom is disposed through the outlet. The collected processing fluid may be discharged to the outside.

The drain pipe 950 is connected to the first discharge line 310, the valve 312 and the pump 314 is installed in the first discharge line 310. The pump 314 may apply a negative pressure to the process chamber 100 to forcibly discharge the processing fluid (mainly, chemical and rinse liquid) contained in the drain cup 900.

As in the present invention, when performing a plurality of substrate processing process in a single process chamber 100 may affect the material of the process chamber 100 according to the type of processing fluid. In particular, in the case of using a supercritical fluid, the inside of the process chamber 100 is preferably made of a material having a high strength that can withstand high pressure. Therefore, in the present invention, by installing a drain cup 900 made of synthetic resin (PEEK / PTFE) material having high corrosion resistance in the process chamber 100, a chemical solution (sulfuric acid (H ₂ SO ₄ ), hydrogen peroxide (H ₂ O ₂ ) mixture , Hydrogen fluoride (HF), etc.) to minimize direct contact with the process chamber. The process chamber 100 is made of a metal material having a strong strength.

Referring to FIG. 3, the spin chuck 400 is provided inside the process chamber 100 and chucks the substrate. The spin chuck 400 has a disc-shaped support plate 420. Pin members 440 for chucking the substrate are installed in an edge region of the upper surface 422 of the support plate 420, and a rotation axis 510 of the rotation drive unit 500 is disposed in the center region of the lower surface 424 of the support plate 420. Is combined. The spin chuck 400 is formed with an exhaust passage 404 having an exhaust hole 402 through which the processing fluid of the process chamber exits on an upper surface facing the bottom surface of the substrate. The exhaust passage 404 of the spin chuck 400 is connected to the exhaust passage 504 of the rotation shaft 510.

5 is an enlarged view of the rotating shaft of FIG. 1, and FIG. 6 is an enlarged view of the housing of FIG. 1.

1, 5, and 6, the rotation driving unit 500 is provided at an outer lower portion of the process chamber 100 and rotates the spin chuck 400. The rotation drive unit 500 has a rotation axis 510. One end of the rotation shaft 510 is coupled to the bottom surface 424 of the support plate 420 of the spin chuck 400, and the other end of the rotation shaft 510 is formed in the through hole formed in the lower wall 140 of the process chamber 100. 146 penetrates through and is exposed to the outer bottom of the process chamber 100. The surface of the rotating shaft 510 may be coated with a material having excellent corrosion resistance that can withstand contact with the supercritical fluid and the chemical liquid.

The axis of rotation 510 is provided such that its longitudinal direction is directed in the vertical direction. The rotation axis 510 may be divided into three regions along the length direction, and for convenience, the upper region may be the first rod 511, the central region may be the second rod 512, and the lower region may be the third region. Called rod 513. The rotary shaft 510 is hollow and provided therein with an exhaust passage 504 connected to the exhaust passage 404 of the spin chuck 400.

A driven magnetic body 516 is installed on an outer circumferential surface of the second rod 512 of the rotation shaft 510, and faces the driven magnetic body 516 in the radial direction of the rotation shaft 510 around the second rod 512. A drive magnetic body 527 is provided for viewing. The driving magnetic body 527 is rotated about the rotation shaft 510 by the driving member 530. The magnetic poles of the driven magnetic body 516 and the magnetic poles of the driving magnetic body 527 may be arranged so that magnetic attraction is applied to each other. When the driving member 530 rotates the driving magnetic body 527, the driven magnetic body 516 is rotated by the magnetic attraction between the driving magnetic body 527 and the driven magnetic body 516.

The rotating shaft 510 and the driving magnetic body 527 may be accommodated in the housing 520 which is installed adjacent to the lower wall 140 of the process chamber 100. The body 521 of the housing 520 may have a cross-sectional shape corresponding to the lower wall 140 of the process chamber 100, and may be elongated to extend in a longitudinal direction. A vertical hole 522 is elongated at the center along the longitudinal direction of the body 521 of the housing 520, and a magnetic body communicating with the vertical hole 522 and facing in the transverse direction at the inner center of the body 521 of the housing 520. Receiving grooves 525 are formed. A portion of the rotating shaft 510 that is exposed to the outside of the process chamber 100 is inserted into the vertical hole 522, and the outer shaft of the rotating shaft 510 maintains a predetermined distance from the inner peripheral surface of the vertical hole 522. Is inserted into the state. The driving magnetic body 527 is accommodated in the magnetic body accommodating groove 525. A bearing member 528 is interposed between the upper and lower surfaces of the driving magnetic body 527 and the surface of the magnetic body accommodating groove 525, and the driving magnetic body 527 is rotatably supported by the bearing member 528. In addition, an opening 526 is formed at one side of the magnetic body accommodating groove 525 so as to communicate with the outside of the housing 520. The surface of the vertical hole 522 and the magnetic material receiving groove 525 of the housing 520 may be coated with a corrosion resistant material that can withstand contact with the fluid in a supercritical state.

The drive member 530 includes a motor 532 that provides rotational force and a belt-pull assembly 534 that transmits the rotational force of the motor 532 to the drive magnetic body 527. The belt-pulley assembly 534 has a pulley 534a coupled to the axis of the motor 532 and a belt 534b that is wound around the pulley 534a and the driving magnetic body 527. The belt 534b may be led into the magnetic material receiving groove 525 through the opening 526 of the housing 520.

The rotation shaft 510 and the housing 520 are provided with a first axis alignment member 540a and a second axis alignment member 540b for aligning the longitudinal direction of the rotation shaft 510 in the vertical direction. The first shaft alignment member 540a faces the first alignment fixing magnetic body 544a and the first alignment fixing magnetic body 544a provided on the inner circumferential surface of the through hole 146 formed in the lower wall 140. The first alignment movable magnetic material 542a provided on the outer circumferential surface of the first rod 511 of the rotation shaft 510 is included. The second shaft alignment member 540b faces the second alignment fixing magnetic body 544b and the second alignment fixing magnetic body 544b provided on the inner circumferential surface of the lower end of the vertical hole 522 of the housing 510. The second alignment movable magnetic body 544a is provided on the outer circumferential surface of the third rod 513 of the rotation shaft 510. Magnetic attraction may be applied between the first alignment fixed magnetic body 544a and the first alignment movable magnetic body 542a and between the second alignment fixed magnetic body 544b and the second alignment movable magnetic body 544a. On the contrary, magnetic repulsive force may act. This is because, due to the annular structure of the interacting magnetic bodies, the magnetic force acts in the radial direction, so that the magnetic force or the magnetic repulsive force act on the magnetic bodies to have the same effect.

The rotation shaft 510 and the housing 520 are provided with a first shaft support member 550a and a second shaft support member 550b for supporting the rotation shaft 510.

The first shaft support member 550a includes a first flange 514, a first support movable magnetic body 552a, a first support upper fixed magnetic body 554a-1, and a first support lower fixed magnetic body 554a-. It includes 2). The first flange 514 may be coupled to an upper portion of the driven magnetic body 516 on the axis of rotation 510, for example the boundary of the first rod 511 and the second rod 512. The first support movable magnetic material 552a is provided in the edge region of the first flange 514. The first flange 514 is received in a first horizontal hole 523 that communicates with the vertical hole 522 of the housing 510, and the first flange 514 has a surface with an inner surface of the first horizontal hole 523. It can be accommodated at a constant interval. The first horizontal hole 523 may be formed horizontally on the magnetic receiving groove 525. In addition, the surface of the first flange 514 and the surface of the first horizontal hole 523 may be coated with a corrosion resistant material that can withstand contact with the fluid in a supercritical state.

The first supporting lower fixed magnetic material 554a-2 faces the lower portion of the first horizontal hole 523 so that a magnetic repulsive force acts between the first supporting movable magnetic material 552a of the first flange 514. Can be provided. The magnetic repulsive force between the first support movable magnetic material 552a and the first support lower fixed magnetic material 554a-2 pushes the first flange 514 upwards, so that the first flange 514 is coupled. Support the axis of rotation 510. The first supporting upper fixed magnetic material 554a-1 may be provided to face the upper portion of the first horizontal hole 523 so that a magnetic repulsive force acts between the first supporting movable magnetic material 552a. The magnetic repulsive force between the first support movable magnetic body 552a and the first support upper fixed magnetic body 554a-1 pushes the first flange 514 downward, so that the first support movable magnetic body 552a Excessive fluctuation of the first flange 514 may be prevented by the magnetic repulsive force acting between the first fixing lower fixing magnetic material 554a-2 and the first supporting lower fixing magnetic material 554a-2.

The second shaft support member 550b includes a second flange 515, a second support movable magnetic body 552b, a second support upper fixed magnetic body 554b-1, and a second support lower fixed magnetic body 554b. -2). The second flange 515 may be coupled to the bottom of the driven magnetic body 516 on the axis of rotation 510, for example the boundary of the second rod 512 and the third rod 513. The second support movable magnetic material 552b is provided in the edge region of the second flange 515. The second flange 515 is received in a second horizontal hole 524 that communicates with the vertical hole 522 of the housing 510, and the second flange 515 has a surface with an inner surface of the second horizontal hole 524. It can be accommodated at a constant interval. The second horizontal hole 524 may be formed horizontally in the lower portion of the magnetic body receiving groove 525. In addition, the surface of the second flange 515 and the surface of the second horizontal hole 524 may be coated with a corrosion resistant material that can withstand contact with the fluid in the supercritical state.

The second supporting lower fixed magnetic material 554b-2 faces the lower portion of the second horizontal hole 524 such that a magnetic repulsive force acts between the second supporting movable magnetic material 552b of the second flange 515. Can be provided. The magnetic repulsive force between the second support movable magnetic material 552b and the second support lower fixed magnetic material 554b-2 pushes the second flange 515 upward, so that the second flange 515 is coupled. Support the axis of rotation 510.

The second supporting upper fixed magnetic material 554b-1 may be provided to face the upper portion of the second horizontal hole 524 such that a magnetic repulsive force acts between the second supporting movable magnetic material 552b. The magnetic repulsive force between the second support movable magnetic body 552b and the second support upper fixed magnetic body 554b-1 pushes the second flange 515 downward, so that the second support movable magnetic body 552b. Excessive fluctuation of the second flange 515 may be prevented by the magnetic repulsive force acting between the second fixing lower fixing magnetic material 554b-2 and the second supporting lower fixing magnetic material 554b-2.

The lifting unit 600 includes a base 620 supporting the housing 520 and a linear driving member 640 for moving the base 620 in the vertical direction. As the linear driving member 640 moves the base 620 in the up and down direction, the housing 520 moves in the up and down direction, and in conjunction with the lower wall 140 and the spin chuck 400 of the process chamber 100. This is moved up and down. The elevating unit 600 lowers the housing 520 to position the spin chuck 400 at an outer lower portion of the process chamber 120 during substrate loading into the process chamber 100 and unloading the substrate from the process chamber 100. Can be. In addition, the elevating unit 600 may raise and lower the housing 520 to process the process so that the spin chuck 400 may be positioned inside the processing chamber 120.

The exhaust unit 300 exhausts the first exhaust line 320 connected to the exhaust passage 504, and supercritical carbon dioxide (scCO ₂ ) used for substrate processing and isopropyl alcohol (IPA) mixed thereto through the line. do. The separator 322 is disposed on the first exhaust line 320. Separator 322 separates the isopropyl alcohol (IPA) and supercritical carbon dioxide (scCO ₂₎ from a mixed iso supercritical propyl alcohol (IPA), carbon dioxide (scCO _2). The separated supercritical carbon dioxide (scCO ₂ ) is discharged through the first branch line 330, and the separated isopropyl alcohol (IPA) is discharged through the second branch line 340. The valve 332 and the pump 334 may be installed on the first branch line 330, and the valve 342 and the pump 344 may be installed on the second branch line 340. The pumps 334 and 344 installed in the first and second branch lines 330 and 340 may force negative pressure to discharge isopropyl alcohol (IPA) and supercritical carbon dioxide (scCO ₂ ).

In the substrate processing method of the substrate processing apparatus having the above-described configuration, isopropyl alcohol (IPA) is used to process a substrate using a chemical solution, a rinse process for treating the substrate with deionized water, and deionized water on the substrate treated in the rinse process. ) And drying to remove residual isopropyl alcohol (IPA) on the substrate with a supercritical fluid. Here, the chemical liquid supplied from the substrate is scattered to the edge by the rotational force of the substrate, and the chemical liquid scattered is collected in the drain cup and collected at the bottom and discharged to the outside through the drain pipe.

Meanwhile, in the process of treating the substrate with the supercritical fluid while rotating the substrate, the supercritical fluid supplied to the process chamber is exhausted to the outside through the exhaust passage formed in the spin chuck. Since the exhaust passage is formed in the spin chuck, it is possible to prevent the chemical liquid or the deionized water from being discharged into the exhaust passage and provide a uniform exhaust flow inside the process chamber.

The foregoing description is merely illustrative of the technical idea of the present invention, and various changes and modifications may be made by those skilled in the art without departing from the essential characteristics of the present invention. Therefore, the embodiments disclosed in the present invention are not intended to limit the technical idea of the present invention but to describe the present invention, and the scope of the technical idea of the present invention is not limited thereto. The protection scope of the present invention should be interpreted by the following claims, and all technical ideas within the equivalent scope should be interpreted as being included in the scope of the present invention.

The drawings described below are for illustrative purposes only and are not intended to limit the scope of the invention.

1 is a view showing an example of a substrate processing apparatus according to the present invention.

2 is a diagram for explaining the configuration of a processing fluid supply unit.

3 is a view illustrating a process chamber structure of FIG. 1.

4 is a view showing that the chemical liquid scattered from the substrate is discharged after being received in the drain cup.

5 is an enlarged view of the rotation shaft of FIG. 1.

6 is an enlarged view of the housing of FIG. 1.

<Description of Symbols for Main Parts of Drawings>

100: process chamber 200: processing fluid supply unit

300: exhaust unit 400: spin chuck

500: rotation drive unit 510: rotation axis

520: housing 530: drive member

600: lifting unit 900: drain cup

Claims (17)

In the substrate processing apparatus: A process chamber in which a substrate processing process is performed; A spin chuck provided in the process chamber and chucking a substrate; A drain cup provided in the process chamber and accommodating the processing liquid such that the processing liquid scattered from the substrate does not splash on the inner surface of the process chamber; And A rotary drive unit provided at an outer lower portion of the process chamber and rotating the spin chuck; The spin chuck is And an exhaust passage having an exhaust hole through which the internal gas of the process chamber escapes on an upper surface facing the bottom surface of the substrate. The method of claim 1, The drain cup And a substrate disposed between the process chamber and the substrate and spaced apart from the process chamber. The method of claim 1, The drain cup A ceiling positioned adjacent to an upper surface in the process chamber to face a processing surface of the substrate; A sidewall portion extending from an edge of the ceiling and positioned adjacent to a side within the process chamber; And And a bottom portion extending from the sidewall portion and positioned adjacent to a bottom surface in the process chamber. The method of claim 3, wherein The bottom part And a receiving space for collecting the processing liquid scattered to the ceiling portion and the side wall portion at a height lower than that of the substrate. The method of claim 3, wherein The drain cup And an extension part formed extending from the bottom part and surrounding an edge from a side surface of the spin chuck and an upper surface on which the substrate is located. The method of claim 3, wherein The substrate processing apparatus And a spray nozzle for injecting supercritical and processing liquid into the center of the substrate. The method of claim 3, wherein The ceiling is And a central hole formed so that the injection nozzle for injecting the supercritical and processing liquid into the center of the substrate is positioned. The method of claim 3, wherein The drain cup And a drain pipe connected to the bottom part through the process chamber to discharge the processing liquid contained in the bottom part out of the process chamber. delete The method of claim 1, The rotation drive unit, A rotating shaft having one end coupled to the spin chuck and the other end exposed to the outside of the process chamber, and a driven magnetic body installed on the exposed outer peripheral surface; A driving magnetic body provided to face the driven magnetic body in a radial direction of the rotation axis; And And a drive member for rotating the drive magnetic body about the rotation axis. 11. The method of claim 10, The rotating shaft further comprises an exhaust pipe connected to the exhaust passage formed in the spin chuck. The method of claim 1, The process chamber includes an upper structure having side and top surfaces, and a lower structure having a bottom surface on which the spin chuck is positioned, And the lower structure is movable up and down for loading and unloading and maintenance of the substrate. delete In the substrate processing apparatus: A process chamber in which a substrate processing process is in progress and including an upper structure and a lower structure; A spin chuck provided in the process chamber and chucking a substrate; A rotating shaft for transmitting rotational force to the spin chuck through the lower structure; An injection nozzle installed through the upper structure of the process chamber and configured to inject a supercritical and processing liquid into a center of the substrate; And A drain cup installed inside the process chamber and configured to receive a processing liquid sprayed onto the substrate through the injection nozzle and to be scattered to the outside; The spin chuck is provided with an exhaust passage having an exhaust hole for exhausting the supercritical fluid supplied into the process chamber, And the rotating shaft has a hollow structure to be connected to the exhaust passage. The method of claim 14, And the drain cup is spaced apart from the process chamber. delete In the substrate processing method: Supplying a processing liquid to a process chamber loaded with a spin chuck and treating the substrate with the processing liquid while rotating the substrate; The processing liquid scattered from the substrate is received in a drain cup installed in the process chamber and then drained to the outside, After treating the substrate with the processing liquid, supplying a supercritical fluid to the process chamber, and treating the substrate with the supercritical fluid while rotating the substrate; The supercritical fluid supplied to the process chamber is exhausted to the outside through the exhaust passage formed in the spin chuck.

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