KR101098910B1 - 진공압력 제어 시스템 및 진공압력 제어 프로그램 - Google Patents

진공압력 제어 시스템 및 진공압력 제어 프로그램 Download PDF

Info

Publication number
KR101098910B1
KR101098910B1 KR1020090130439A KR20090130439A KR101098910B1 KR 101098910 B1 KR101098910 B1 KR 101098910B1 KR 1020090130439 A KR1020090130439 A KR 1020090130439A KR 20090130439 A KR20090130439 A KR 20090130439A KR 101098910 B1 KR101098910 B1 KR 101098910B1
Authority
KR
South Korea
Prior art keywords
vacuum pressure
pressure
vacuum
valve
reaction chamber
Prior art date
Application number
KR1020090130439A
Other languages
English (en)
Korean (ko)
Other versions
KR20100076898A (ko
Inventor
테츠지로 코노
Original Assignee
씨케이디 가부시키 가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 씨케이디 가부시키 가이샤 filed Critical 씨케이디 가부시키 가이샤
Publication of KR20100076898A publication Critical patent/KR20100076898A/ko
Application granted granted Critical
Publication of KR101098910B1 publication Critical patent/KR101098910B1/ko

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Control Of Fluid Pressure (AREA)
  • Details Of Valves (AREA)
KR1020090130439A 2008-12-26 2009-12-24 진공압력 제어 시스템 및 진공압력 제어 프로그램 KR101098910B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2008-331674 2008-12-26
JP2008331674A JP4778549B2 (ja) 2008-12-26 2008-12-26 真空圧力制御システム及び真空圧力制御プログラム

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020110069728A Division KR101098914B1 (ko) 2008-12-26 2011-07-14 진공압력 제어 시스템 및 진공압력 제어 프로그램

Publications (2)

Publication Number Publication Date
KR20100076898A KR20100076898A (ko) 2010-07-06
KR101098910B1 true KR101098910B1 (ko) 2011-12-27

Family

ID=42571754

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020090130439A KR101098910B1 (ko) 2008-12-26 2009-12-24 진공압력 제어 시스템 및 진공압력 제어 프로그램
KR1020110069728A KR101098914B1 (ko) 2008-12-26 2011-07-14 진공압력 제어 시스템 및 진공압력 제어 프로그램

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020110069728A KR101098914B1 (ko) 2008-12-26 2011-07-14 진공압력 제어 시스템 및 진공압력 제어 프로그램

Country Status (2)

Country Link
JP (1) JP4778549B2 (ja)
KR (2) KR101098910B1 (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012090583A1 (ja) * 2010-12-28 2012-07-05 シーケーディ株式会社 静電容量式変位センサ及び静電容量式変位センサを有する比例制御弁
JP5331867B2 (ja) * 2011-01-13 2013-10-30 Ｃｋｄ株式会社 真空圧力制御装置
CN104991581B (zh) * 2015-06-08 2019-08-23 北京北方华创微电子装备有限公司 一种工艺腔室的压力控制方法和装置
JP6681452B1 (ja) * 2018-10-19 2020-04-15 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置及び半導体装置の製造方法
CN111831022B (zh) * 2019-04-18 2022-03-18 北京七星华创流量计有限公司 腔室压力控制方法及装置、半导体设备
JP7103995B2 (ja) * 2019-05-22 2022-07-20 Ckd株式会社 真空開閉弁

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000163137A (ja) 1998-11-27 2000-06-16 Ckd Corp 真空圧力制御システム
JP2008069787A (ja) * 2007-10-03 2008-03-27 Ckd Corp 真空圧力制御システム

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000163137A (ja) 1998-11-27 2000-06-16 Ckd Corp 真空圧力制御システム
JP2008069787A (ja) * 2007-10-03 2008-03-27 Ckd Corp 真空圧力制御システム

Also Published As

Publication number Publication date
KR20110099191A (ko) 2011-09-07
JP2010152763A (ja) 2010-07-08
KR101098914B1 (ko) 2011-12-27
JP4778549B2 (ja) 2011-09-21
KR20100076898A (ko) 2010-07-06

Similar Documents

Publication Publication Date Title
KR101098914B1 (ko) 진공압력 제어 시스템 및 진공압력 제어 프로그램
TWI405059B (zh) Automatic pressure regulator for thermal mass flow regulators
KR100604106B1 (ko) 진공 압력 제어 시스템
US6508268B1 (en) Vacuum pressure control apparatus
KR101211365B1 (ko) 복수의 압력 검출기를 가지는 약액 공급 시스템
KR101117747B1 (ko) 진공 압력 제어 시스템
US11216016B2 (en) Flow rate control method and flow rate control device
JP5118216B2 (ja) 真空圧力制御システム及び真空圧力制御プログラム
JP2017215025A (ja) 真空弁及びそれを用いた真空圧力制御システム
JP2006316711A (ja) 薬液供給システム及び薬液供給ポンプ
US20210180599A1 (en) Vacuum pressure control system
JP2008069787A (ja) 真空圧力制御システム
JP3590030B2 (ja) 真空圧力制御システム及びコントローラ
JP6241483B2 (ja) フィードバック制御装置
KR101312378B1 (ko) 진공압력제어장치
US6089101A (en) Material testing machine including a control system for feedback-controlling the operation of a servo system
JP2000161236A (ja) 真空圧力制御システム
US11873916B2 (en) Fluid control device, fluid supply system, and fluid supply method
JP4327314B2 (ja) 真空圧力制御システム
KR20230114984A (ko) 챔버 압력에 따라 다른 기준값을 적용하는 압력제어시스템의 챔버 압력제어 방법 및 그를 위한 압력제어시스템

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
A107 Divisional application of patent
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20141205

Year of fee payment: 4

FPAY Annual fee payment

Payment date: 20151118

Year of fee payment: 5

FPAY Annual fee payment

Payment date: 20161123

Year of fee payment: 6

FPAY Annual fee payment

Payment date: 20171117

Year of fee payment: 7

FPAY Annual fee payment

Payment date: 20181115

Year of fee payment: 8