KR101088487B1 - Resistance change memory device array including selection device and 3-dimensional resistance change memory device, electronic product, and method for fabricating the device array - Google Patents

Abstract

A resistance change memory device array, an electronic product, and a method of manufacturing the device having a selection device and a three-dimensional structure resistance change memory device. The device array includes a plurality of first directional data lines arranged parallel to each other on a substrate. A plurality of conductive pillars are disposed in a line between the sidewalls of the first directional data lines that face each other. A resistance change material layer is positioned between the sidewalls of the conductive pillars and the sidewalls of the data lines adjacent thereto. Select elements are electrically connected to the conductive pillars, respectively.

Description

Resistance change memory device array including selection device and 3-dimensional resistance change memory device, electronic product, and method for fabricating the device array}

The present invention relates to a nonvolatile memory device, and more particularly to a resistance change memory device.

Flash memory, which is currently commercially available as a nonvolatile memory, uses a change in threshold voltage due to storing or removing charge in the charge storage layer. The charge storage layer may be a floating gate that is a polysilicon layer or a charge trap layer that is a silicon nitride layer. Recently, new next-generation nonvolatile memory devices having low power consumption and high integration compared to the flash memory devices have been studied. Examples of the next generation nonvolatile memory devices include a phase change RAM (PRAM), a magnetic RAM (MRAM), and a resistance change RAM (ReRAM).

Among the next generation nonvolatile memory devices, PRAM has been commercialized first, but the PRAM faces a difficulty in improving the degree of integration. As an alternative to this, ReRAM has been developed, but specific methods for improving the density have not been studied.

SUMMARY OF THE INVENTION An object of the present invention is to provide a resistance change memory device array, an electronic product, and a method of manufacturing the device array having a three-dimensional structure resistance change memory device and a selection device capable of improving the degree of integration.

Technical problems of the present invention are not limited to the technical problems mentioned above, and other technical problems not mentioned will be clearly understood by those skilled in the art from the following description.

One aspect of the present invention to achieve the above object provides a resistance change memory device array. The device array includes a plurality of first directional data lines arranged parallel to each other on a substrate. A plurality of conductive pillars are disposed in a line between the sidewalls of the first directional data lines that face each other. A resistance change material layer is positioned between the sidewalls of the conductive pillars and the sidewalls of the data lines adjacent thereto. Select elements are electrically connected to the conductive pillars, respectively.

The select elements are select transistors, the select transistors are respectively located at intersections of a plurality of word lines parallel to each other and bit lines crossing the word lines, and a gate of each select transistor is connected to each word line. An electrical connection may be made, one of the sources / drains may be electrically connected to each of the bit lines, and the other of the sources / drains may be electrically connected to each of the conductive pillars.

And second direction data lines intersecting the first direction data lines and arranged in parallel to each other on the first direction data lines, wherein the conductive pillars are formed of sidewalls facing each other of the first direction data lines and the first direction data lines. Each of the second directional data lines may be positioned in spaces surrounded by opposite sidewalls.

The tunneling barrier insulating layer may be positioned between the sidewall of the conductive pillar and the resistance change material layer or between the resistance change material layer and the data line.

The resistance change material film includes a transition metal oxide layer, a Pr _1-X Ca _x MnO ₃ , 0 <X <1) film, a chalcogenide film, and a perovskite film. Or a metal-doped solid electrolyte membrane.

To achieve the above object, another aspect of the present invention provides a resistance change memory device array. The device array has an active region defined by a device isolation film formed in a substrate. A word line crosses the active region. At least a pair of first directional data lines are arranged parallel to each other on the word line. A conductive pillar is disposed between the sidewalls of the first directional data lines facing each other to electrically connect to an active region exposed at one side of the word line. A resistive change material layer is positioned between the sidewall of the conductive pillar and the sidewall of the data line adjacent thereto.

A bit line electrically connected to the active area exposed to the other side of the word line and crossing the upper part of the word line may be provided.

Another aspect of the present invention to achieve the above object provides a method of manufacturing a resistance change memory device array. First, an isolation region is formed in a substrate to define an active region. A word line is formed across the active region. At least one pair of first directional data lines arranged parallel to each other on the word line is formed. A conductive pillar is formed between the sidewalls of the first directional data lines facing each other and electrically connected to an active region exposed at one side of the word line. Before forming the conductive pillar, a resistance change material layer is formed on sidewalls of the data lines.

Second direction data lines arranged parallel to each other crossing the first direction data lines may be formed on the first direction data lines. In this case, the conductive pillars may be formed in spaces surrounded by sidewalls facing each other of the first directional data lines and sidewalls facing each other.

Another aspect of the present invention to achieve the above object provides an electronic product. The electronic product includes a resistance change memory device and a processor connected thereto. The resistance change memory device includes a plurality of first directional data lines arranged parallel to each other on a substrate. A plurality of conductive pillars are arranged in a line between the sidewalls of the first directional data lines that face each other. A resistance change material layer is positioned between the sidewalls of the conductive pillars and the sidewalls of the data lines adjacent thereto. Select elements are electrically connected to the conductive pillars, respectively.

According to the present invention, a resistance change memory device array includes a plurality of first directional data lines arranged in parallel with each other on a substrate, a plurality of conductive pillars between sidewalls of the first directional data lines facing each other, and the respective angles. A device resistance layer may be provided between the sidewall of the conductive pillar and the sidewall of the data line adjacent thereto to improve device integration. Specifically, when a pair of data lines overlapping both sidewalls of one conductive pillar are formed, the pair of unit elements share one conductive pillar as an electrode, so that the area of each unit element can be reduced. Therefore, the degree of integration of the resistance change memory device can be improved. Furthermore, when two pairs of data lines are formed that overlap each other on both sidewalls and the other sidewalls of one conductive pillar, the two pairs of unit elements share one conductive pillar as an electrode, so that the area of each unit element is Can be further reduced.

In addition, it is possible to selectively apply voltage to the conductive pillars by electrically connecting the select elements to the conductive pillars, respectively.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings in order to describe the present invention in more detail. However, the present invention is not limited to the embodiments described herein but may be embodied in other forms. In the figures, where a layer is said to be "on" another layer or substrate, it may be formed directly on the other layer or substrate, or a third layer may be interposed therebetween.

1 is an equivalent circuit diagram of a portion of a resistance change memory device array according to an embodiment of the present invention.

Referring to FIG. 1, a resistance change memory device array includes a plurality of word lines W / L parallel to each other and a plurality of bit lines B / L crossing the word lines W / L. do. A plurality of unit cells UC are disposed at cross points of the bit lines B / L and the word lines W / L, respectively.

The unit memory elements R _{(i, 1)} , R _{(i, 2)} , R _{(i, 3)} , and R _{(i, 4)} provided in the unit cell UC may have one ends thereof as one node. The node may be a common electrode CF. The other ends of the unit memory elements R _{(i, 1)} , R _{(i, 2)} , R _{(i, 3)} , and R _{(i, 4)} provided in the unit cell UC are each pair of first. The first direction data lines D _{V (i)} and the pair of second direction data lines D _{H (i)} may be connected to each other. The first directional data lines D _{V (i)} and the second directional data lines D _{H (i)} may be disposed to cross each other.

The common electrode CF may have the form of a conductive pillar, and the first directional data lines DV _(i ) and the second directional data lines DH _(i) may be formed of i layers. In this case, the unit memory elements R _{(i, 1)} , R _{(i, 2)} , R _{(i, 3)} , and R _{(i, 4)} provided in the unit cell C may also be i It can be formed in layers.

FIG. 1 illustrates that the unit memory elements R _{(i, 1)} , R _{(i, 2)} , R _{(i, 3)} , and R _{(i, 4)} of the unit cells UC are two pairs. The case is illustrated by way of example. However, the present invention is not limited thereto, and each unit cell UC may include a pair of unit memory elements, for example, R _{(i, 1)} and R _{(i, 2)} , and the unit memory elements R _{( When i, 1)} , R _{(i, 2)} , R _{(i, 3)} , and R _{(i, 4)} are stacked in i layers, 2i pairs, i.e., 4i unit memory elements may be provided.

The selection device SD may be a transistor. In this case, the gate of the selection element SD is electrically connected to the word line W / L. One of the sources / drains of the selection device SD is electrically connected to the bit line B / L, and the other is electrically connected to the common electrode CF.

FIG. 2 is a layout diagram corresponding to the equivalent circuit diagram of FIG. 1 and illustrates a part of the resistance change memory device array according to the exemplary embodiment of the present invention limited to the selection device layer SDL. 3 is a layout diagram corresponding to the equivalent circuit diagram of FIG. 1 and illustrates a portion of a resistance change memory device array according to an exemplary embodiment of the present invention limited to a memory device layer MDL. 4 is a perspective view illustrating a resistance change memory device array according to an exemplary embodiment of the present invention. FIG. 5 is a cross-sectional view taken along the cut line II ′ of FIGS. 2, 3, and 4. 6 is _a cross-sectional view taken along the cut lines II _a -II _a ′ and III _a -III _a ′ of FIGS. 2, 3 and 4.

2, 5, and 6, the device isolation layer 100a may be formed in the substrate 100 to define active regions act. The active regions act may be formed parallel to each other in one direction, and each column of the active regions act may include a plurality of active regions. The substrate 100 may be a semiconductor substrate, and the device isolation layer 100a may be formed using a shallow trench isolation (STI) method.

After forming the gate insulating layer 10 and the gate conductive layer on the substrate 100 on which the device isolation layer 100a is formed, word lines W / L may be formed by patterning the gate conductive layer. In this case, a pair of word lines W / L may cross the upper portion of each active region act. Source / drain regions S / D may be formed by doping conductive impurities in the active region act using the word line W / L as a mask.

After forming a first interlayer dielectric layer 20 on the word lines W / L, first contact holes C ₁ are formed in the first interlayer dielectric layer 20. Each pair of first contact holes C ₁ exposes both ends of each of the active regions act. The first contact plugs CP ₁ may be formed by filling a conductive material in the first contact holes C ₁ .

Subsequently, interconnection patterns IC may be formed on the first interlayer insulating layer 20 to respectively connect the first contact plugs CP ₁ .

A second interlayer insulating film 30 may be formed on the interconnection patterns IC. Second contact holes C ₂ may be formed in the second interlayer insulating layer 30 and the first interlayer insulating layer 20. Each of the second contact holes C ₂ exposes an active region act between the pair of word lines W / L. The second contact plugs CP ₂ may be formed by filling a conductive material in the second contact holes C ₂ . Subsequently, bit lines B / L connected to the second contact plugs CP ₂ may be formed on the second interlayer insulating layer 30. The bit lines B / L may be formed in parallel with the columns of the active regions act.

A third interlayer insulating film 40 may be formed on the bit lines B / L.

3, 4, 5, and 6, a plurality of first directional data lines DV _(i) and i = 1 are disposed on the third interlayer insulating layer 40. The first directional data lines D _{V (i)} and i = 1 may be parallel to each other. The first interwire insulating layer 110_i and i = 1 may be disposed on the first directional data lines DV ( _i) and i = 1.

Second directional data lines D _{H (i} intersecting the first directional data lines DV _(i) and i = 1 on the first interwire insulating layer 110_i and i = 1 and arranged in parallel with each other. ₎ , i = 1) may be located. The second interwire insulating layers 120_i and i = 1 may be disposed on the second directional data lines D _{H (i)} and i = 1.

The first directional data lines DV ( _i) and i = 1, the first interwire insulating film 110_i and i = 1, the second directional data lines DH _(i) and i = 1, and the second insulating film (120_i, i = 1) between the wire may constitute the first unit layer _{(L i, i = 1)} .

A plurality of unit layers may be stacked. As an example, FIG. 4, the first unit layer (L _{i, i} = 1) to form a second unit layer (L _{i, i} = 2) on the second unit, as illustrated in Figs. 5 and 6 it is possible to form the third layer unit layers (L _{i, i} = 3) on the _{(L i, i = 2)} .

The first directional data lines D _{V (i)} provided in each of the unit layers are aligned with the first directional data lines D _{V (i)} provided in the other unit layers. The second direction data lines D _{H (i)} may also be aligned with the second direction data lines D _{H (i)} provided in the other unit layer.

Third contact holes in spaces surrounded by sidewalls facing each other of the first directional data lines D _{V (i)} and facing sidewalls of the second directional data lines D _{H (i)} . C ₃ ) may be formed respectively. Each of the third contact holes C ₃ may have sidewalls facing each other of the first directional data lines DV _(i) and sidewalls of the second directional data lines DH _(i) . Exposed sidewalls may be exposed, and the interconnection pattern IC may be exposed at the bottom thereof.

Conductive pillars CF are disposed in the third contact holes C ₃ , respectively. Between the sidewalls of the conductive pillars and the sidewalls of the data lines adjacent thereto, for example, the sidewalls of the conductive pillars CF and the sidewalls of the first directional data lines DV _(i) adjacent thereto. The resistance change material film RCL is positioned between the sidewalls of the two-directional data lines D _{H (i)} . The resistance change material layer RCL may be formed to surround an outer circumference of the conductive pillar CF.

In the present exemplary embodiment, each of the unit memory elements R _{(i, 1)} , R _{(i, 2)} , R _{(i, 3)} , and R _{(i, 4)} each includes one conductive pillar CF and the conductive element. One data line D _{H (i)} or D _{V (i)} overlapping the sidewall of the pillar CF, and the sidewall of the conductive pillar CF and the data line D _{H (i)} or D _{V ( i)} and a resistance change material film (RCL) located between). A conductive path is formed (low resistance state) or formed in the resistance change material film RCL according to the voltage difference between the conductive pillar CF and the data line D _{H (i)} or D _{V (i)} . The path may be broken (high resistance state). Since the conductive path is generated only in an extremely small area where the conductive pillar CF and the data line D _{H (i)} or D _{V (i)} overlap, the plurality of unit memory elements R _{(i, 1)} Although, R _{(i, 2)} , R _{(i, 3)} and R _{(i, 4)} share one conductive pillar CF as an electrode, these unit memory elements R _{(i, 1)} , R ₍ Separate data can be written to each of _{i, 2)} , R _{(i, 3)} , and R _{(i, 4)} ) _, and the written data can be read without confusion.

If only one unit layer is stacked, two pairs of unit memory elements R _{(i, 1)} , R _{(i, 2)} , R _{(i, 3)} , and R _{(i, 4 )} in the unit cell UC ₎ ) Can be formed, and thus the degree of integration of the resistance change memory device can be improved. However, each of the unit layers may include the first directional data lines D _{V (} except the second directional data lines D _{H (i)} and i = 1 and the second interwire insulating layer 120_i and i = 1). _i) , i = 1) and the first interwire insulating film 110_i and i = 1. In this case, a pair of unit elements R _{(i, 1)} and R _{(i, 2)} may be formed in the unit cell UC. In this case, the degree of integration may be improved compared to the case where one unit element is formed in the unit cell UC.

In addition, when the unit layer is formed of i layers, device integration may be further improved.

The resistance change material layer RCL may be formed to surround an outer circumference of the conductive pillar CF. The resistance change material film includes a transition metal oxide layer, a Pr _1-X Ca _x MnO ₃ , 0 <X <1) film, a chalcogenide film, and a perovskite film. Or a metal-doped solid electrolyte membrane. The metal oxide film may be SiO ₂ , Al ₂ O ₃ , or a transition metal oxide film. The transition metal oxide film may be HfO ₂ , ZrO ₂ , Y ₂ O ₃ , TiO ₂ , NiO, Nb ₂ O ₅ , Ta ₂ O ₅ , CuO, Fe ₂ O ₃ , or a lanthanoids oxide layer. have. The lanthanoid may be La (Lanthanum), Ce (Cerium), Pr (Praseodymium), Nd (Neodymium), Sm (Samarium), Gd (Gadolinium), or Dy (Dysprosium). May makil the chalcogenide film GeSbTe, the perovskite SrTiO ₃ film, may be Cr or Nb-doped SrZrO ₃ makil. In addition, the metal doped solid electrolyte layer may be a Ag doped layer, that is, an AgGeSe layer in GeSe.

Tunneling between the sidewall of the conductive pillar CF and the resistance change material layer RCL or between the resistance change material layer RCL and the data line D _{H (i)} and / or D _{V (i)} . A barrier insulating layer (not shown) may be further located. The tunneling barrier insulating film is a film capable of tunneling electrons by deforming the potential barrier when an electric field applied to both ends thereof exceeds a predetermined voltage. For example, SiO ₂ , Al ₂ O ₃ , HfO _2, or about 2-5 nm. It may have a multilayer SiO ₂ (2-nm) / HfO ₂ (3-nm) stack structure. When such a tunneling barrier insulating film is formed, a leakage current may be minimized by applying an electric field below a predetermined voltage to an unselected cell.

FIG. 7A is a schematic diagram illustrating an example of a programming operation of a resistance change memory according to an exemplary embodiment of the present invention, in which the selection device of FIG. 1 is omitted.

Referring to FIG. 7A, 1 / 2V _write is applied to the selected conductive pillars CF _{(n, m)} among the conductive pillars _, and the unselected conductive pillars CF _{(n, m + 1)} and CF _{(n, m + 2)} , CF _{(n + 1, m)} , CF _{(n + 1, m + 1)} , CF _{(n + 1, m + 2)} , CF _{(n + 2, m)} , CF _{(n + 2 (m + 1)} and CF _{(n + 2, m + 2)} ) apply ground voltage OV. This may be implemented by selectively turning on the switching element (SD of FIG. 1) electrically connected to the selected conductive pillar and turning off the switching element (SD of FIG. 1) electrically connected to the non-selected conductive pillars.

-1 / 2V _write is applied to the selected data line D _{V (i, m + 1)} among the data lines _, and the unselected data lines D _{V (i, m)} and D _{V (i, m + 2)} , D _{V (i, m + 3)} , D _{H (i, n)} , D _{H (i, n + 1)} , D _{H (i, n + 2)} , D _{H (i, n + 3)} ) Apply ground voltage. As a result, an electric field of V _write is applied to the unit element between the selected conductive pillar CF _{(n, m)} and the selected data line D _{V (i, m + 1)} , that is, the target element R _{(i, 2)} . Is applied to program data (low resistance state or high resistance state) to the target element R _{(i, 2)} .

In contrast, a unit device between the selected conductive pillar CF _{(n, m)} and the unselected data lines DV _{(i, m)} , D _{H (i, n)} , and D _{H (i, n + 1)} (R _{(i, 1)} , R _{(i, 3)} , R _{(i, 4)} ), and the selected data line _{DV (i, m + 1} ) and the unselected conductive pillars CF _{(n unit elements between, m + 1)} , CF _{(n + 1, m)} , CF _{(n + 1, m + 1)} , CF _{(n + 2, m)} , CF _{(n + 2, m + 1)} ) Field is applied with an electric field of 1 / 2V _write so no data is programmed. In addition, since the electric field is not applied to the remaining unit elements except for the unit elements, data is not programmed.

As such, it can be seen that data can be selectively programmed into a target device of the resistance change memory device array according to an embodiment of the present invention.

7B is a schematic diagram illustrating an example of a read operation of a resistance change memory according to an exemplary embodiment of the present invention.

Referring to FIG. 7B, 1 / 2V _read is applied to the selected conductive pillars CF _{(n, m)} among the conductive pillars _, and the unselected conductive pillars CF _{(n, m + 1)} and CF _{(n, m + 2)} , CF _{(n + 1, m)} , CF _{(n + 1, m + 1)} , CF _{(n + 1, m + 2)} , CF _{(n + 2, m)} , CF _{(n + 2 (m + 1)} and CF _{(n + 2, m + 2)} ) apply ground voltage. This may be implemented by selectively turning on the switching element (SD of FIG. 1) electrically connected to the selected conductive pillar and turning off the switching element (SD of FIG. 1) electrically connected to the non-selected conductive pillars.

-1 / 2V _read is applied to the selected data line D _{V (i, m + 1)} among the data lines _, and the unselected data lines D _{V (i, m)} and D _{V (i, m + 2)} , D _{V (i, m + 3)} , D _{H (i, n)} , D _{H (i, n + 1)} , D _{H (i, n + 2)} , D _{H (i, n + 3)} ) Apply ground voltage. As a result, V _read is performed in the unit memory device between the selected conductive pillar CF _{(n, m)} and the selected data line _{DV (i, m + 1)} , that is, in the target memory device R _{(i, 2)} . An electric field of is applied so that a current corresponding to the data stored in the target memory element R _{(i, 2)} flows through the selected data line _{DV (i, m + 1)} .

On the other hand, unit memory between the selected conductive pillar CF _{(n, m)} and the unselected data lines D _{V (i, m)} , D _{H (i, n)} , D _{H (i, n + 1)} Devices R _{(i, 1)} , R _{(i, 3)} , R _{(i, 4} ), and the selected data line _{DV (i, m + 1} ) and the unselected conductive pillars CF _{( n, m + 1)} , CF _{(n + 1, m)} , CF _{(n + 1, m + 1)} , CF _{(n + 2, m)} , CF _{(n + 2, m + 1)} ) The memory elements are applied with an electric field of 1 / 2V _read . In addition, no electric field is applied to the remaining unit memory elements except for the unit memory elements.

In this case, when the current of the selected data line _{DV (i, m + 1)} is sensed _, data stored in the target memory device R _{(i, 2)} may be read.

However, the current flowing to each of the other unit memory devices connected to the selected data line D _{V (i, m + 1)} and to which an electric field of 1 / 2V _read is applied is applied to the target memory device R _{(i, 2)} . It is preferably about 100 times lower than the current flowing in the. To this end, a tunneling barrier insulating layer may be applied to the unit memory devices as described with reference to FIGS. 3, 4, 5, and 6. In other words, by applying the tunneling barrier insulating film to the unit memory elements, current may not flow due to the potential barrier of the tunneling barrier insulating film when an electric field of 1 / 2V _read is applied, while an electric field of V _read is applied. The potential barrier of the tunneling barrier insulating layer is deformed to allow current to flow. However, the present invention is not limited thereto, and the electric field of 1 / 2V _read is applied to all the unit memory devices including the target memory device connected to the selected data line D _{V (i, m + 1)} to select the selected data line D _{V ( i, m + 1)} ), i.e., the reference current, is measured, and as described above _, the electric field of V _read is selectively applied only to the target memory element R _{(i, 2)} to select the selected data line _{DV. (i, m + 1))} the current that is read when the measurement of the current comparing the read current with the reference current, the electric field of the V _read when the unit memory device to be applied with an electric field of 1 / 2V _read flowing in Even when the difference of the current value when the is applied is not large, the data stored in the target memory element R _{(i, 2)} can be sufficiently read.

7C is a schematic diagram illustrating an example of an erase operation of a resistance change memory according to an exemplary embodiment of the present invention.

Referring to FIG. 7C, when a ground voltage is applied to all conductive pillars and V _erase is applied to all signal lines, an electric field of V _erase is applied to all unit memory elements to erase data written in all unit memory elements. Can be. Applying a ground voltage to all conductive pillars can be achieved by turning off the switching element electrically connected to all conductive pillars.

8A to 8I illustrate cross sections taken along cut lines II _a -II _a ′, II _b -II _b ′, III _a -III _a ′, and III _b -III _b ′ in FIG. 4 to the memory element layer. Cross-sectional views are shown for each process step.

4 and 8A, a substrate 100 is provided. The selection element layer SDL is formed on the substrate 100 as described with reference to FIGS. 2, 5, and 6.

First data conductive layers 105_i and i = 1 are formed on the selection element layer SDL. The thickness of the first data conductive layer 105_i and i = 1 may be set to 1F. The first data conductive film 105_i, i = 1 may be a Pt film, a Ru film, an Ir film, or an Al film, but preferably, an Al film.

4 and 8B, the first data conductive layers 105_i and i = 1 are patterned by using a photolithography process to form a plurality of first directional data lines D _{V (i)} and i = parallel to each other. To form 1). The pitch between the first directional data lines D _{V (i)} and i = 1 may be set to 2F (F: feature size).

First interlayer insulating films 110_i and i = 1 may be formed on the first directional data lines DV ( _i) and i = 1. The first interwire insulating layer 110_i and i = 1 may be formed so as to conformally cover the first directional data lines DV _(i) and i = 1. In addition, the first interwire insulating film 110_i and i = 1 may have a thickness of about F / 5, for example, so as not to fill the space between the first directional data lines DV _(i) and i = 1. It can be formed as. The first interwire insulating layer 110_i and i = 1 may be a silicon oxide layer.

4 and 8C, a second data conductive layer 115_i and i = 1 are formed on the first interwire insulating layer 110_i and i = 1. The thickness of the second data conductive layer 115_i and i = 1 may be set to 2F to fill the space between the first directional data lines D _{V (i)} and i = 1. The second data conductive film 115_i and i = 1 may be a Pt film, a Ru film, an Ir film, or an Al film, but preferably, an Al film.

Subsequently, the second data conductive film 115_i and i = 1 may be planarized by using a chemical mechanical polishing (CMP) method.

4 and 8D, the second data conductive layers 115_i and i = 1 are patterned by using a photolithography process to form a plurality of second directional data lines D _{H (i)} and i = parallel to each other. 1) can be formed. The second directional data lines D _{H (i)} and i = 1 may cross the first directional data lines D _{V (i)} and i = 1 and be arranged in parallel with each other. The pitch between the second directional data lines D _{H (i)} and i = 1 may be set to 2F (feature size).

4 and 8E, the second interwire insulating layer 120_i and i = 1 may be formed on the second directional data lines D _{H (i)} and i = 1. The second interwire insulating film 120_i and i = 1 may be set to a thickness sufficient to fill a space between the second directional data lines D _{H (i)} and i = 1, for example, 2F. Can be. The second interwire insulating film 120_i and i = 1 may be a silicon oxide film. The second interwire insulating film 120_i and i = 1 may be planarized using a CMP method or the like.

The first directional data lines DV ( _i) and i = 1, the first interwire insulating film 110_i and i = 1, the second directional data lines DH _(i) and i = 1, and the second insulating film (120_i, i = 1) between the wire may constitute the first unit layer _{(L i, i = 1)} . However, each of the unit layers may include the first directional data lines D _{V (} except the second directional data lines D _{H (i)} and i = 1 and the second interwire insulating layer 120_i and i = 1). _i) , i = 1) and the first interwire insulating film 110_i and i = 1.

4 and 8F, a plurality of unit layers may be stacked. As an example, the second unit layer (L _i , i = 2) is formed on the first unit layer (L _i , i = 1), and the third unit layer (L _i , i = 2) is formed on the third unit layer (L _i , i = 2). The unit layers _Li and i may be formed.

4 and 8G, a plurality of contact holes are formed in the second interwire insulating film 120_i, i = 1, 2 and 3, and the first interwire insulating film 110_i, i = 1, 2 and 3. Form C ₃ . The contact holes C ₃ are surrounded by sidewalls facing each other of the first direction data lines D _{V (i)} and sidewalls facing each other of the second direction data lines D _{H (i)} . And sidewalls of the first directional data lines D _{V (i)} and opposite sidewalls of the second directional data lines D _{H (i)} . . The contact holes C ₃ also extend in the interlayer insulating films 30 and 40 of the selection device layer SDL, and at the bottom thereof, an interconnection pattern (see FIGS. 4 and 5). IC) can be exposed.

The diameter of the contact hole (C ₃ ) may satisfy the following equation (1).

In Equation 1, DM _H is the diameter of the contact hole (C ₃ ), a is the interval between the first direction data lines (D _{V (i)} adjacent to each other, b is second direction data adjacent to each other) Spacing between lines D _{H (i)} .

When the diameter of the contact hole C ₃ satisfies Equation 1, each of the contact holes C ₃ and the sidewalls facing each other of the first directional data lines DV _(i) are formed. Sidewalls facing each other of the two-way data lines D _{H (i)} may be exposed. In addition, an insulating film remains between the contact portion C ₃ and the corner portion where the first directional data lines D _{V (i)} and the second directional data lines D _{H (i)} meet. The first direction data lines D _{V (i)} and the second direction data lines D _{H (i)} may not be shorted to each other.

4 and may also be referred to 8h way, the contact holes (C ₃₎ said contact hole (C ₃₎ the resistance change material film (RCL) which covers the side walls as the foam cone (conformal) within the formation. As a result, the resistance change material layer RCL may have sidewalls facing each other of the first directional data lines DV ( _i) and sidewalls facing each other of the second directional data lines DH _(i) . Can cover them.

The resistance change material layer (RCL) includes a transition metal oxide layer, a Pr _1-X Ca _x MnO ₃ , 0 <X <1, film, chalcogenide film, and perovskite (perovskite) film, or metal doped solid electrolyte film. The metal oxide film may be SiO ₂ , Al ₂ O ₃ , or a transition metal oxide film. The transition metal oxide film may be HfO ₂ , ZrO ₂ , Y ₂ O ₃ , TiO ₂ , NiO, Nb ₂ O ₅ , Ta ₂ O ₅ , CuO, Fe ₂ O ₃ , or a lanthanoids oxide layer. have. The lanthanoid may be La (Lanthanum), Ce (Cerium), Pr (Praseodymium), Nd (Neodymium), Sm (Samarium), Gd (Gadolinium), or Dy (Dysprosium). May makil the chalcogenide film GeSbTe, the perovskite SrTiO ₃ film, may be Cr or Nb-doped SrZrO ₃ makil. In addition, the metal doped solid electrolyte layer may be a Ag doped layer, that is, an AgGeSe layer in GeSe.

The resistance change material layer (RCL) is a physical vapor deposition (PVD), molecular beam such as Pulsed Laser Deposition (PLD), Thermal Evaporation, Electron-beam Evaporation It may be formed using epitaxy deposition (MBE, Molecular Beam Epitaxy), or chemical vapor deposition (CVD, Chemical Vapor Deposition).

4 and 8I, a plurality of conductive pillars CF are disposed in the contact holes C ₃ surrounded by the resistance change material layer RCL. As a result, between the sidewalls of each of the conductive pillars CF and the pair of first directional data lines DV _(i) , and the pair of first sidewalls of the other sidewalls of each of the conductive pillars CF, respectively. The resistance change material film RCL is positioned between the two-directional data lines D _{H (i)} .

Forming the data lines (D _{V (i),} D _{H (i)),} the tunnel barrier insulating film (not shown) which covers the side wall of the in the contact hole (C ₃₎ before the formation of the resistance change material film (RCL), or Before forming the conductive pillar CF, a tunnel barrier insulating layer may be formed on the resistance change material layer RCL. However, considering the stability of the resistance change material layer RCL, the tunnel barrier insulating layer may be formed before the resistance change material layer RCL is formed.

9 is a partially broken perspective view illustrating a resistance change memory device array according to an exemplary embodiment of the present invention. FIG. 10 is _a cross-sectional view taken along cut lines II _a -II _a ', II _b -II _b ', III _a -III _a ', and III _b- III _b ' of FIG. It is sectional drawing shown. The resistance change memory device array and the method of manufacturing the same according to the present exemplary embodiment may be substantially similar to those described with reference to FIGS. 4 and 8A to 8I except as described below.

9 and 10, a substrate 100 is provided. The selection element layer SDL is formed on the substrate 100 as described with reference to FIGS. 2, 5, and 6.

A plurality of first directional data lines DV _(i) and i = 1 parallel to each other are formed on the selection device layer SDL. A pitch between the first directional data lines D _{V (i)} and i = 1 may be set to 1F (F: feature size). The thicknesses of the first directional data lines D _{V (i)} and i = 1 may also be set to 1F.

First interlayer insulating layers 110_i and i = 1 may be formed on the first directional data lines DV ( _i) and i = 1. The first interwire insulating film 110_i and i = 1 may be set to a thickness sufficient to fill a space between the first directional data lines DV _(i) and i = 1, for example, 2F. Can be. The first interwire insulating layer 110_i and i = 1 may be a silicon oxide layer.

Thereafter, the first interwire insulating film 110_i and i = 1 may be planarized. The planarization may be performed by using a chemical mechanical polishing (CMP) method.

Second direction data lines D _H intersecting the first direction data lines DV _(i) and i = 1 on the planarized first interwire insulating layer 110_i and i = 1 and arranged in parallel with each other. _(i) , i = 1) can be formed. The pitch between the second directional data lines D _{H (i)} and i = 1 may be set to 1F (F: feature size). The thicknesses of the second directional data lines D _{H (i)} and i = 1 may also be set to 1F.

Second interwire insulating layers 120_i and i = 1 may be formed on the second directional data lines D _{H (i)} and i = 1. The second interwire insulating film 120_i and i = 1 may be set to a thickness sufficient to fill a space between the second directional data lines D _{H (i)} and i = 1, for example, 2F. Can be.

The first directional data lines DV ( _i) and i = 1, the first interwire insulating film 110_i and i = 1, the second directional data lines DH _(i) and i = 1, and the second insulating film (120_i, i = 1) between the wire may constitute the first unit layer _{(L i, i = 1)} . A second unit layer (L _i , i = 2) is formed on the first unit layer (L _i , i = 1), and a third unit layer (L _i , i = 2) is formed on the second unit layer (L _i , i = 2). _i , i = 3) may be formed to form a plurality of unit layers on the substrate.

A plurality of contact holes C ₃ are formed in the second interwire insulating film 120_i, i = 1, 2 and 3, and the first interwire insulating film 110_i, i = 1, 2 and 3. The contact holes C ₃ are surrounded by sidewalls facing each other of the first direction data lines D _{V (i)} and sidewalls facing each other of the second direction data lines D _{H (i)} . And sidewalls of the first directional data lines D _{V (i)} and opposite sidewalls of the second directional data lines D _{H (i)} . . The contact holes C ₃ also extend in the interlayer insulating films 30 and 40 of the selection device layer SDL, and at the bottom thereof, an interconnection pattern (see FIGS. 4 and 5). IC) can be exposed.

At this time, the diameter of the contact hole (C ₃ ) may satisfy the following equation (2).

In Equation 2, DM _H is the diameter of the contact hole (C ₃ ), a is the interval between the first direction data lines (D _{V (i)} ) adjacent to each other, b is second direction data adjacent to each other Spacing between lines D _{H (i)} .

When the diameter of the contact hole C ₃ satisfies Equation 2, sidewalls of the first directional data lines D _{V (i)} and the first sidewalls of the first contact data C ₃ are respectively formed in the contact holes C ₃ . Sidewalls facing each other of the two-way data lines D _{H (i)} may be exposed. However, the contact hole C ₃ is different from that described with reference to FIGS. 8A to 8I, in which the first direction data line _{DV (i} ) and the second direction data line D _{H (i)} meet each other. It may be formed to contact the corner portion. In this embodiment, even in this case, since the first direction data line _{DV (i)} and the second direction data line _{DH (i)} are sufficiently separated into different layers by the inter-wire insulating film, It may not be shorted to each other.

The contact holes (C ₃₎ said contact hole (C ₃₎ the resistance change material film (RCL) which covers the side walls as the foam cone (conformal) of the inside can be formed. The resistance change material layer RCL may have a spacer shape selectively formed only on sidewalls of the contact hole C ₃ . As a result, the resistance change material layer RCL may have sidewalls facing each other of the first directional data lines DV ( _i) and sidewalls facing each other of the second directional data lines DH _(i) . Can cover them.

A plurality of conductive pillars CF may be formed in the contact holes C ₃ surrounded by the resistance change material layer RCL. As a result, between the sidewalls of each of the conductive pillars CF and the pair of first directional data lines DV _(i) , and the pair of second sidewalls of the other sidewalls of the respective conductive pillars CF The resistance change material film RCL is positioned between the direction data lines D _{H (i)} . The conductive pillars CF may be a Pt film, a Ru film, an Ir film, or an Al film, but preferably, an Al film.

The contact holes (C _3), the data line (D _{V (i),} D _{H (i)),} the tunnel barrier insulating film (not shown) which covers the side wall of the inside before the formation of the resistance change material film (RCL) formed Alternatively, the tunnel barrier insulating layer may be formed on the resistance change material layer RCL before the conductive pillar CF is formed.

FIG. 11 is a schematic block diagram of an electronic product employing a resistive change memory as a data storage media in accordance with embodiments of the present invention.

Referring to FIG. 11, the electronic product 200 includes at least one resistance change memory 210, a data storage medium, a processor 220 connected to the resistance change memory 210, and an input connected to the processor 220. / Output device 230. Here, the resistance change memory 210 may include any one of the above-described resistance change memory device arrays.

The processor 220 may perform a function of controlling the resistance change memory device 210. In addition, the electronic product 200 may exchange data with other electronic products through the input / output device 230. In addition to data communication between the processor 220 and the resistance change memory device 210, data communication between the processor 220 and the input / output device 230 may be performed using data bus lines.

The electronic product 210 may be a data storage device such as a memory card, an information processing device such as a computer, a digital camera, or a cellular phone.

In the above, the present invention has been described in detail with reference to preferred embodiments, but the present invention is not limited to the above embodiments, and various modifications and changes by those skilled in the art within the spirit and scope of the present invention. This is possible.

1 is an equivalent circuit diagram of a portion of a resistance change memory device array according to an embodiment of the present invention.

FIG. 2 is a layout diagram corresponding to the equivalent circuit diagram of FIG. 1 and illustrates a part of the resistance change memory device array according to an embodiment of the present invention limited to a selection device layer.

3 is a layout diagram corresponding to the equivalent circuit diagram of FIG. 1 and illustrates a part of a resistance change memory device array according to an exemplary embodiment of the present invention limited to a memory device layer.

4 is a perspective view illustrating a resistance change memory device array according to an exemplary embodiment of the present invention.

FIG. 5 is a cross-sectional view taken along the cut line II ′ of FIGS. 2, 3, and 4.

6 is _a cross-sectional view taken along the cut lines II _a -II _a ′ and III _a -III _a ′ of FIGS. 2, 3 and 4.

7A is a schematic diagram illustrating an example of a programming operation of a resistance change memory according to an exemplary embodiment of the present invention.

7B is a schematic diagram illustrating an example of a read operation of a resistance change memory according to an exemplary embodiment of the present invention.

7C is a schematic diagram illustrating an example of an erase operation of a resistance change memory according to an exemplary embodiment of the present invention.

8A to 8I illustrate cross sections taken along cut lines II _a -II _a ′, II _b -II _b ′, III _a -III _a ′, and III _b -III _b ′ in FIG. 4 to the memory element layer. Cross-sectional views are shown for each process step.

9 is a partially broken perspective view illustrating a resistance change memory device array according to an exemplary embodiment of the present invention.

FIG. 10 is _a cross-sectional view taken along cut lines II _a -II _a ', II _b -II _b ', III _a -III _a ', and III _b- III _b ' of FIG. It is sectional drawing shown.

FIG. 11 is a schematic block diagram of an electronic product employing a resistive change memory as a data storage media in accordance with embodiments of the present invention.

Claims (15)

A pair of first directional data lines arranged parallel to each other on the substrate; A pair of second directional data lines intersecting the first directional data lines and arranged in parallel with each other on the first directional data lines; A conductive pillar disposed in a space surrounded by opposite sidewalls of the first directional data lines and opposite sidewalls of the second directional data lines; A resistance change material layer positioned between the sidewall of the conductive pillar and the sidewall of the data line adjacent thereto; And And a selection device electrically connected to the conductive pillars. The method of claim 1, The selection elements are selection transistors, The select transistors are respectively located at intersections of a plurality of word lines parallel to each other and bit lines crossing the word lines. A gate of each select transistor is electrically connected to each word line, one of the sources / drains is electrically connected to the respective bit line, and the other of the source / drains is electrically connected to the respective conductive pillars. A resistance change memory device array. delete The method of claim 1, And a tunneling barrier insulating layer disposed between the sidewalls of the conductive pillars and the resistance change material layer or between the resistance change material layer and the data line. The method of claim 1, The resistance change material film includes a transition metal oxide layer, a Pr _1-X Ca _x MnO ₃ , 0 <X <1) film, a chalcogenide film, and a perovskite film. And / or a metal doped solid electrolyte film. An active region defined by an isolation layer formed in the substrate; A word line across the active area; A pair of first directional data lines arranged parallel to each other on the word line; A pair of second directional data lines intersecting the first directional data lines and arranged in parallel with each other on the first directional data lines; A conductive pillar located in a space surrounded by opposite sidewalls of the first directional data lines and opposite sidewalls of the second directional data lines and electrically connected to an active region exposed at one side of the word line; And And a resistance change material layer disposed between the sidewall of the conductive pillar and the sidewall of the data line adjacent thereto. The method of claim 6, And a bit line electrically connected to an active region exposed to the other side of the word line and crossing the upper portion of the word line. delete The method of claim 6, And a tunneling barrier insulating layer disposed between the sidewalls of the conductive pillars and the resistance change material layer or between the resistance change material layer and the data line. Forming an isolation layer in the substrate to define an active region; Forming a word line across the active region; Forming at least a pair of first directional data lines arranged parallel to each other on the word line; Forming second directional data lines intersecting the first directional data lines and arranged in parallel with each other on the first directional data lines; A conductive pillar positioned in a space surrounded by the sidewalls facing each other of the first directional data lines and the sidewalls facing each other, and electrically connected to an active region exposed at one side of the word line; Forming; And And forming a resistive change material layer on sidewalls of the data lines before forming the conductive pillars. delete In an electronic product having a resistance change memory device and a processor connected thereto, the resistance change memory device includes: A pair of first directional data lines arranged parallel to each other on the substrate; A pair of second directional data lines intersecting the first directional data lines and arranged in parallel with each other on the first directional data lines; A conductive pillar disposed in a space surrounded by opposite sidewalls of the first directional data lines and opposite sidewalls of the second directional data lines; A resistance change material layer positioned between the sidewall of the conductive pillar and the sidewall of the data line adjacent thereto; And An electronic product comprising a selection device electrically connected to the conductive pillar. The method of claim 12, The selection elements are selection transistors, The select transistors are respectively located at intersections of a plurality of word lines parallel to each other and bit lines crossing the word lines. A gate of each select transistor is electrically connected to each word line, one of the sources / drains is electrically connected to the respective bit line, and the other of the source / drains is electrically connected to the respective conductive pillars. Electronics made. delete The method of claim 12, And a tunneling barrier insulating layer disposed between the sidewall of the conductive pillar and the resistance change material layer or between the resistance change material layer and the data line.

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