KR101082715B1 - 마스크 블랭크 및 포토마스크 - Google Patents

마스크 블랭크 및 포토마스크 Download PDF

Info

Publication number
KR101082715B1
KR101082715B1 KR1020087018335A KR20087018335A KR101082715B1 KR 101082715 B1 KR101082715 B1 KR 101082715B1 KR 1020087018335 A KR1020087018335 A KR 1020087018335A KR 20087018335 A KR20087018335 A KR 20087018335A KR 101082715 B1 KR101082715 B1 KR 101082715B1
Authority
KR
South Korea
Prior art keywords
film
semi
transmittance
mask blank
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020087018335A
Other languages
English (en)
Korean (ko)
Other versions
KR20080088616A (ko
Inventor
마사루 미쯔이
미찌아끼 사노
Original Assignee
호야 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 호야 가부시키가이샤 filed Critical 호야 가부시키가이샤
Publication of KR20080088616A publication Critical patent/KR20080088616A/ko
Application granted granted Critical
Publication of KR101082715B1 publication Critical patent/KR101082715B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020087018335A 2005-12-26 2006-12-26 마스크 블랭크 및 포토마스크 Active KR101082715B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2005-00371970 2005-12-26
JP2005371970 2005-12-26

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020117002397A Division KR101210661B1 (ko) 2005-12-26 2006-12-26 마스크 블랭크 및 포토마스크

Publications (2)

Publication Number Publication Date
KR20080088616A KR20080088616A (ko) 2008-10-02
KR101082715B1 true KR101082715B1 (ko) 2011-11-15

Family

ID=38218030

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020087018335A Active KR101082715B1 (ko) 2005-12-26 2006-12-26 마스크 블랭크 및 포토마스크
KR1020117002397A Active KR101210661B1 (ko) 2005-12-26 2006-12-26 마스크 블랭크 및 포토마스크

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020117002397A Active KR101210661B1 (ko) 2005-12-26 2006-12-26 마스크 블랭크 및 포토마스크

Country Status (4)

Country Link
JP (1) JP4906888B2 (https=)
KR (2) KR101082715B1 (https=)
CN (1) CN101346664B (https=)
WO (1) WO2007074810A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI446105B (zh) * 2007-07-23 2014-07-21 Hoya Corp 光罩之製造方法、圖案轉印方法、光罩以及資料庫
US8273505B2 (en) 2007-09-27 2012-09-25 Hoya Corporation Mask blank and method of manufacturing an imprint mold
JP4934237B2 (ja) * 2007-09-29 2012-05-16 Ｈｏｙａ株式会社 グレートーンマスクの製造方法及びグレートーンマスク、並びにパターン転写方法
US20100294651A1 (en) * 2007-10-12 2010-11-25 Ulvac Coating Corporation Process for producing gray tone mask
CN103513508B (zh) * 2012-06-20 2016-08-10 欣兴电子股份有限公司 灰阶光掩膜与制作方法以及以灰阶光掩膜形成沟渠方法
CN107145035A (zh) * 2017-03-30 2017-09-08 惠科股份有限公司 光罩及其主动开关阵列基板的制造方法
JP7166975B2 (ja) * 2019-03-29 2022-11-08 Hoya株式会社 フォトマスクブランク、フォトマスクの製造方法、及び表示装置の製造方法
TW202443301A (zh) * 2023-03-15 2024-11-01 日商尼康股份有限公司 光罩基底、光罩、光罩基底之製造方法、光罩之製造方法、及裝置之製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100295385B1 (ko) * 1993-04-09 2001-09-17 기타지마 요시토시 하프톤위상쉬프트포토마스크,하프톤위상쉬프트포토마스크용블랭크스및이들의제조방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3262302B2 (ja) * 1993-04-09 2002-03-04 大日本印刷株式会社 位相シフトフォトマスク、位相シフトフォトマスク用ブランクス及びそれらの製造方法
JP3289606B2 (ja) * 1996-07-11 2002-06-10 凸版印刷株式会社 ハーフトーン型位相シフトマスク用ブランク及びハーフトーン型位相シフトマスク
JP2004177683A (ja) * 2002-11-27 2004-06-24 Clariant (Japan) Kk 超高耐熱ポジ型感光性組成物を用いたパターン形成方法
JP4385690B2 (ja) * 2003-09-09 2009-12-16 凸版印刷株式会社 液晶表示素子製造用露光マスク及びその製造方法
JP4919220B2 (ja) * 2005-02-28 2012-04-18 Ｈｏｙａ株式会社 グレートーンマスク
JP5076473B2 (ja) * 2005-12-05 2012-11-21 大日本印刷株式会社 マスクブランクおよび階調マスク
JP4961990B2 (ja) * 2005-12-14 2012-06-27 大日本印刷株式会社 マスクブランクおよび階調マスク

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100295385B1 (ko) * 1993-04-09 2001-09-17 기타지마 요시토시 하프톤위상쉬프트포토마스크,하프톤위상쉬프트포토마스크용블랭크스및이들의제조방법

Also Published As

Publication number Publication date
KR20110025232A (ko) 2011-03-09
JP4906888B2 (ja) 2012-03-28
WO2007074810A1 (ja) 2007-07-05
KR101210661B1 (ko) 2012-12-11
JP2009187032A (ja) 2009-08-20
KR20080088616A (ko) 2008-10-02
CN101346664A (zh) 2009-01-14
CN101346664B (zh) 2011-12-14

Similar Documents

Publication Publication Date Title
TWI422961B (zh) 光罩及其製造方法、圖案轉印方法、以及顯示裝置之製造方法
KR101624436B1 (ko) 대형 위상 시프트 마스크 및 대형 위상 시프트 마스크의 제조 방법
TWI387845B (zh) 灰階遮罩及圖案轉印方法
KR101151685B1 (ko) 블랭크 마스크 및 포토마스크
JP4906888B2 (ja) マスクブランク及びフォトマスク
KR101071471B1 (ko) 포토마스크 블랭크 및 포토마스크와 그들의 제조 방법
JP2009258250A (ja) 多階調フォトマスク、多階調フォトマスクの製造方法、パターン転写方法、及び薄膜トランジスタの製造方法
KR101333931B1 (ko) 포토마스크 블랭크, 포토마스크 및 포토마스크의 제조방법
KR101140054B1 (ko) 다계조 포토마스크, 다계조 포토마스크의 제조 방법, 및 패턴 전사 방법
TWI417644B (zh) Mask base and mask
TWI422963B (zh) 多階調光罩及其製造方法、及圖案轉印方法
KR20110103917A (ko) 마스크 블랭크 및 포토마스크
TWI393998B (zh) Mask base and mask
KR20080089259A (ko) 마스크 블랭크 및 포토마스크
JP2980479B2 (ja) フォトマスク及び露光方法
KR101056592B1 (ko) 마스크 블랭크 및 포토마스크
JP2009237569A (ja) 多階調フォトマスク及びそれを用いたパターン転写方法

Legal Events

Date Code Title Description
A201 Request for examination
AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E14-X000 Pre-grant third party observation filed

St.27 status event code: A-2-3-E10-E14-opp-X000

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

A107 Divisional application of patent
AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A18-div-PA0104

St.27 status event code: A-0-1-A10-A16-div-PA0104

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

J201 Request for trial against refusal decision
PJ0201 Trial against decision of rejection

St.27 status event code: A-3-3-V10-V11-apl-PJ0201

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PB0901 Examination by re-examination before a trial

St.27 status event code: A-6-3-E10-E12-rex-PB0901

B701 Decision to grant
PB0701 Decision of registration after re-examination before a trial

St.27 status event code: A-3-4-F10-F13-rex-PB0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20141021

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20151016

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

FPAY Annual fee payment

Payment date: 20161020

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20171018

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20181023

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 13

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 14

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000