KR101040076B1 - 스퍼터링 타겟트/배킹 플레이트 접합체 - Google Patents

스퍼터링 타겟트/배킹 플레이트 접합체 Download PDF

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Publication number
KR101040076B1
KR101040076B1 KR1020087031070A KR20087031070A KR101040076B1 KR 101040076 B1 KR101040076 B1 KR 101040076B1 KR 1020087031070 A KR1020087031070 A KR 1020087031070A KR 20087031070 A KR20087031070 A KR 20087031070A KR 101040076 B1 KR101040076 B1 KR 101040076B1
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KR
South Korea
Prior art keywords
backing plate
copper
target
sputtering target
zinc alloy
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KR1020087031070A
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English (en)
Korean (ko)
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KR20090016599A (ko
Inventor
쿠니히로 오다
아츠시 후쿠시마
Original Assignee
Jx닛코 닛세끼 킨조쿠 가부시키가이샤
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Publication of KR20090016599A publication Critical patent/KR20090016599A/ko
Application granted granted Critical
Publication of KR101040076B1 publication Critical patent/KR101040076B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/02—Alloys based on copper with tin as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/04—Alloys based on copper with zinc as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
KR1020087031070A 2006-06-29 2007-05-02 스퍼터링 타겟트/배킹 플레이트 접합체 KR101040076B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2006-179930 2006-06-29
JP2006179930 2006-06-29

Publications (2)

Publication Number Publication Date
KR20090016599A KR20090016599A (ko) 2009-02-16
KR101040076B1 true KR101040076B1 (ko) 2011-06-09

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020087031070A KR101040076B1 (ko) 2006-06-29 2007-05-02 스퍼터링 타겟트/배킹 플레이트 접합체

Country Status (7)

Country Link
US (1) US8157973B2 (de)
EP (1) EP2039797B1 (de)
JP (1) JP4879986B2 (de)
KR (1) KR101040076B1 (de)
CN (1) CN101479400B (de)
TW (1) TW200801216A (de)
WO (1) WO2008001547A1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102263414B1 (ko) 2020-02-19 2021-06-10 주식회사 엘에이티 스퍼터 전극체

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101065511A (zh) * 2004-11-17 2007-10-31 日矿金属株式会社 溅射靶、溅射靶－背衬板组装体以及成膜装置
KR101337306B1 (ko) * 2008-04-21 2013-12-09 허니웰 인터내셔널 인코포레이티드 필드-강화 스퍼터링 타겟 및 그 생산 방법
WO2011062002A1 (ja) 2009-11-20 2011-05-26 Jx日鉱日石金属株式会社 スパッタリングターゲット－バッキングプレート接合体及びその製造方法
US10167547B2 (en) 2009-12-24 2019-01-01 Jx Nippon Mining & Metals Corporation Gadolinium sputtering target and production method of said target
JP5694360B2 (ja) 2010-10-27 2015-04-01 Jx日鉱日石金属株式会社 スパッタリングターゲット−バッキングプレート接合体及びその製造方法
US8968537B2 (en) * 2011-02-09 2015-03-03 Applied Materials, Inc. PVD sputtering target with a protected backing plate
WO2013003458A1 (en) 2011-06-27 2013-01-03 Soleras Ltd. Sputtering target
CN105209657A (zh) * 2013-11-06 2015-12-30 吉坤日矿日石金属株式会社 溅射靶/背衬板组件
WO2016017432A1 (ja) 2014-07-31 2016-02-04 Jx日鉱日石金属株式会社 防食性の金属とＭｏ又はＭｏ合金を拡散接合したバッキングプレート、及び該バッキングプレートを備えたスパッタリングターゲット－バッキングプレート組立体
JP6021861B2 (ja) * 2014-08-06 2016-11-09 Ｊｘ金属株式会社 スパッタリングターゲット−バッキングプレート接合体
KR101649794B1 (ko) 2014-08-20 2016-08-19 김정욱 타워램프 상태 모니터링용 무선 타워램프 정보 관리 시스템
JP6546953B2 (ja) 2017-03-31 2019-07-17 Ｊｘ金属株式会社 スパッタリングターゲット−バッキングプレート接合体及びその製造方法
US11244815B2 (en) 2017-04-20 2022-02-08 Honeywell International Inc. Profiled sputtering target and method of making the same
CN113173284B (zh) * 2021-04-26 2022-07-15 宁波江丰电子材料股份有限公司 一种半成品靶材背板的管理方法
KR102707659B1 (ko) 2021-11-17 2024-09-19 바짐테크놀로지 주식회사 스퍼터링 타겟 접합체
KR20240072544A (ko) 2022-11-17 2024-05-24 바짐테크놀로지 주식회사 스퍼터링 타겟 접합방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002129316A (ja) 2000-10-31 2002-05-09 Nikko Materials Co Ltd タンタル又はタングステンターゲット−銅合金製バッキングプレート組立体及びその製造方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6345368A (ja) 1986-08-13 1988-02-26 Toshiba Corp スパツタ装置
JPH01222047A (ja) 1988-03-01 1989-09-05 Nippon Mining Co Ltd 銅又は銅合金製バッキングプレート
JPH0774436B2 (ja) 1990-09-20 1995-08-09 富士通株式会社 薄膜形成方法
US5693203A (en) 1992-09-29 1997-12-02 Japan Energy Corporation Sputtering target assembly having solid-phase bonded interface
JP3660014B2 (ja) 1995-03-31 2005-06-15 株式会社テクノファイン スパッタ用ターゲット
JPH11189870A (ja) 1997-12-25 1999-07-13 Nisshin Steel Co Ltd スパッタリング用ターゲットおよびその冷却方法
JP2001329362A (ja) 2000-05-17 2001-11-27 Nikko Materials Co Ltd バッキングプレート及びスパッタリングターゲット−バッキングプレート組立体
JP3791829B2 (ja) 2000-08-25 2006-06-28 株式会社日鉱マテリアルズ パーティクル発生の少ないスパッタリングターゲット
JP3905295B2 (ja) 2000-10-02 2007-04-18 日鉱金属株式会社 高純度コバルトターゲットと銅合金製バッキングプレートとの拡散接合ターゲット組立体及びその製造方法
KR100631275B1 (ko) 2000-11-17 2006-10-02 닛코킨조쿠 가부시키가이샤 파티클 발생이 적은 스퍼터링 타겟트 또는 배킹 플레이트 및 파티클 발생이 적은 스퍼터링 방법
KR100581139B1 (ko) 2001-03-14 2006-05-16 가부시키 가이샤 닛코 마테리알즈 파티클 발생이 적은 스퍼터링 타겟트, 배킹 플레이트 또는스퍼터링 장치 내의 기기 및 방전 가공에 의한 조화방법
WO2003052161A1 (fr) 2001-12-19 2003-06-26 Nikko Materials Company, Limited Procede pour assembler une cible en substance magnetique avec une plaque dorsale, et cible en substance magnetique
US6709557B1 (en) * 2002-02-28 2004-03-23 Novellus Systems, Inc. Sputter apparatus for producing multi-component metal alloy films and method for making the same
TWI269815B (en) * 2002-05-20 2007-01-01 Tosoh Smd Inc Replaceable target sidewall insert with texturing
US20040016635A1 (en) * 2002-07-19 2004-01-29 Ford Robert B. Monolithic sputtering target assembly
KR20060033013A (ko) * 2003-07-14 2006-04-18 토소우 에스엠디, 인크 저 전도 백킹 플레이트를 갖는 스퍼터링 타겟 조립체 및 그제조 방법
EP1715077A4 (de) 2003-12-25 2010-09-29 Nippon Mining Co Anordnung aus kupfer- oder kupferlegierungstarget und kupferlegierungsträgerplatte
CN101065511A (zh) 2004-11-17 2007-10-31 日矿金属株式会社 溅射靶、溅射靶－背衬板组装体以及成膜装置
EP1876258A4 (de) 2005-04-28 2008-08-13 Nippon Mining Co Sputtertarget
KR100994663B1 (ko) 2005-10-04 2010-11-16 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 스퍼터링 타깃
US8647484B2 (en) * 2005-11-25 2014-02-11 Applied Materials, Inc. Target for sputtering chamber
US20080236738A1 (en) * 2007-03-30 2008-10-02 Chi-Fung Lo Bonded sputtering target and methods of manufacture

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002129316A (ja) 2000-10-31 2002-05-09 Nikko Materials Co Ltd タンタル又はタングステンターゲット−銅合金製バッキングプレート組立体及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102263414B1 (ko) 2020-02-19 2021-06-10 주식회사 엘에이티 스퍼터 전극체

Also Published As

Publication number Publication date
JP4879986B2 (ja) 2012-02-22
TW200801216A (en) 2008-01-01
CN101479400A (zh) 2009-07-08
KR20090016599A (ko) 2009-02-16
WO2008001547A1 (fr) 2008-01-03
US20090277788A1 (en) 2009-11-12
CN101479400B (zh) 2011-06-22
EP2039797A4 (de) 2010-04-28
TWI353390B (de) 2011-12-01
US8157973B2 (en) 2012-04-17
EP2039797B1 (de) 2012-08-29
EP2039797A1 (de) 2009-03-25
JPWO2008001547A1 (ja) 2009-11-26

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