KR101037961B1 - Substrate processing apparatus and method of manufacturing semiconductor device - Google Patents

Abstract

The present invention promotes the supply of gas to adjacent substrates without reducing the number of substrates that can be batch processed.

A processing chamber for storing and processing substrates stacked in multiple stages in a horizontal position; one or more processing gas supply nozzles extending in the stacking direction of the substrate so as to follow the processing chamber inner wall and supplying the processing gas into the processing chamber; And a pair of inert gas supply nozzles arranged to extend in the stacking direction of the substrate and to hold the process gas supply nozzles from both sides along the circumferential direction of the substrate and to supply the inert gas into the process chamber, and an exhaust line for exhausting the inside of the process chamber. .

Process gas, exhaust unit, inert gas

Description

SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

TECHNICAL FIELD This invention relates to the substrate processing apparatus including the process of processing a substrate, and the manufacturing method of a semiconductor device.

Conventionally, the substrate processing process of forming a thin film on a board | substrate has been performed as one process of semiconductor device manufacturing processes, such as DRAM, for example. This substrate processing step is performed by a substrate processing apparatus including a processing chamber for storing and processing substrates stacked in multiple stages in a horizontal posture, a processing gas supply nozzle for supplying a processing gas into the processing chamber, and an exhaust line for exhausting the interior of the processing chamber. Has been implemented. Then, a substrate holding tool supporting a plurality of substrates is brought into the processing chamber, and gas is supplied from the processing gas supply nozzle into the processing chamber while exhausting the inside of the processing chamber by the exhaust line, thereby allowing the gas to pass between the substrates. A thin film was formed on the substrate.

However, in the above-mentioned substrate processing process, gas hardly flows to the center vicinity of each board | substrate, the gas supply amount differs in the vicinity of the outer periphery and center of each board | substrate, and in-plane uniformity of substrate processing may fall. For example, the thin film formed near the outer periphery of a board | substrate may become thick compared with the thin film formed near the center of a board | substrate.

In order to promote the supply of gas to the vicinity of the center of each substrate, a method of providing a ring-shaped rectifying plate between the periphery of each substrate supported by the substrate holding tool and the inner wall of the processing chamber can also be considered. have. However, in such a method, the substrate transfer mechanism which transfers a board | substrate to a board | substrate holding | maintenance opening and a rectifying plate may interfere (contact). In order to avoid such interference, when the lamination pitch of a board | substrate is ensured widely, the number of board | substrates which can be processed collectively may become small. Moreover, the board | substrate holding tool provided with the ring-shaped rectifying plate was complicated, and it was easy to be damaged, and was expensive.

It is an object of the present invention to provide a substrate processing apparatus and a semiconductor device manufacturing method capable of promoting supply of gas to the vicinity of the center of each substrate without reducing the number of substrates that can be collectively processed.

One embodiment of the present invention is a processing chamber for storing and processing substrates stacked in multiple stages in a horizontal posture, a processing gas supply unit for supplying one or more kinds of processing gases into the processing chamber, and an inert gas for supplying an inert gas into the processing chamber. A supply unit, an exhaust unit for exhausting the inside of the processing chamber, and a control unit for controlling at least the processing gas supply unit and the inert gas supply unit, wherein the processing gas supply unit follows the inner wall of the processing chamber. At least one processing gas supply nozzle which extends in the stacking direction of the substrate and supplies the processing gas into the processing chamber, wherein the inert gas supply unit is configured to stack the substrate along an inner wall of the processing chamber. The process gas supply nozzles in both directions along the circumferential direction of the substrate, And a pair of inert gas supply nozzles for supplying an inert gas into the processing chamber, wherein the control unit includes the processing gas supply unit so that the supply flow rate of the inert gas is greater than the supply flow rate of the process gas; It is a substrate processing apparatus which controls the said inert gas supply unit.

According to another aspect of the present invention, there is provided an outer tube, an inner tube provided inside the outer tube, at least the lower end of which is housed in a multi-stage stack in a horizontal posture, and one or more kinds of processing gases in the inner tube. A processing gas supply unit for supplying a gas, an inert gas supply unit for supplying an inert gas into the inner tube, and an exhaust hole provided at a position opposite to the processing gas supply nozzle as a sidewall of the inner tube; The processing gas supply unit includes one or more processing gas supply nozzles which are installed inside the inner tube so as to extend in the stacking direction of the substrate, and have one or more processing gas ejection ports for supplying the processing gas. The inert gas supply unit extends along the circumferential direction of the substrate while extending in the stacking direction of the substrate. Group put between both ends from the process gas supply nozzle is ipseol inside the inner tube, a substrate processing apparatus comprising a pair of inert gas feeding nozzle provided with at least one inert gas jet port for supplying the inert gas.

Still another aspect of the present invention is a process of carrying in a substrate stacked in multiple stages in a horizontal posture into a processing chamber, and processing in the processing chamber from one or more processing gas supply nozzles extending in the stacking direction of the substrate along an inner wall of the processing chamber. While supplying gas, it extends in the stacking direction of the substrate so as to follow the inner wall of the processing chamber and from the pair of inert gas supply nozzles arranged to sandwich the processing gas supply nozzle from both sides along the circumferential direction of the substrate into the processing chamber. It is a manufacturing method of the semiconductor device including the process of supplying an inert gas, and processing a board | substrate, and the process of carrying out the board | substrate after processing from the said process chamber.

According to the method for manufacturing a substrate processing apparatus and a semiconductor device according to the present invention, it is possible to promote the supply of gas to the vicinity of the center of each substrate without reducing the number of substrates that can be collectively processed.

As described above, in the above-described substrate processing step, gas hardly flows to the vicinity of the center of each substrate, and there is a difference in the gas supply amount near the outer periphery and the center of each substrate, and the in-plane uniformity of the substrate processing is lowered. There was. For example, an Hf oxide film (HfO film) formed by supplying an amine-based Hf source gas and an O ₃ gas on a substrate, or an amine-based Zr source gas and an O ₃ gas formed on a substrate. In the Zr oxide film (ZrO film) or the like, the film formed near the outer periphery of the substrate may be thinner than the film formed near the center of the substrate.

In order to promote the supply of gas between adjacent substrates, a method of providing a ring-shaped rectifying plate between the periphery of each substrate supported by the substrate holding tool and the inner wall of the processing chamber can also be considered. 4 is a schematic configuration diagram of a substrate holding tool provided with such a rectifying plate. By providing a ring-shaped rectifying plate so as to surround the periphery of each substrate, a film of a part of the processing gas can be attached to the rectifying plate and the film formed near the outer periphery of the substrate can be made thin. 5 is a schematic block diagram of the board | substrate holding tool which does not contain a rectifying plate.

However, in such a method, the substrate transfer mechanism and the rectifier plate, which transfer the substrate to the substrate holding tool, sometimes interfere (contact). In order to avoid such interference, when the lamination pitch of a board | substrate is ensured widely, the number of board | substrates which can be batch-processed may become small, and the productivity of a board | substrate process may fall. Moreover, the board | substrate holding tool which provides the ring-shaped rectifying plate was complicated, its structure was easy to be damaged, and was expensive.

Therefore, the inventors and others have diligently studied a method of promoting the supply of gas to the vicinity of the center of each substrate without reducing the number of substrates that can be collectively processed. As a result, the supply of gas to the vicinity of the center of each substrate can be promoted by simultaneously flowing inert gas from both sides of the processing gas when supplying the processing gas into the processing chamber, so that the gas in the vicinity of the outer periphery and the center of each substrate can be promoted. The knowledge has been gained that the supply can be more homogenized. This invention is invention made based on the knowledge acquired by inventors.

<1st embodiment of this invention>

EMBODIMENT OF THE INVENTION Below, 1st Embodiment of this invention is described according to drawing.

(1) Structure of Substrate Processing Apparatus

First, the structural example of the substrate processing apparatus 101 which performs the substrate processing process as one process of the manufacturing process of a semiconductor device is demonstrated. 6 is a perspective view of the substrate processing apparatus 101 according to the present embodiment.

As shown in FIG. 6, the substrate processing apparatus 101 according to the present embodiment includes an enclosure 111. In order to transport the wafer (substrate) 10 made of silicon or the like into or out of the housing 111, a cassette 110 as a wafer carrier for storing a plurality of wafers 10 is used. In the front of the inside of the housing 111, a cassette stage 114 is provided. The cassette 110 is mounted on the cassette stage 114 by an in-process conveying apparatus (not shown), and is configured to be carried out from the cassette stage 114 to the outside of the housing 111.

The cassette 110 is placed on the cassette stage 114 by the in-process transport apparatus so that the wafer 10 in the cassette 110 is in a vertical posture, and the wafer entrance and exit of the cassette 110 faces upward. The cassette stage 114 rotates the cassette 110 90 degrees in the longitudinal direction toward the rear of the housing 111, and with the wafer 10 in the cassette 110 in a horizontal position, opens the wafer entrance and exit of the cassette 110. It is configured to face rearward in the housing 111.

The cassette shelf (substrate storage container placing shelf) 105 is provided in the substantially center part of the front-back direction in the housing 111. The cassette shelf 105 is configured to store the plurality of cassettes 110 in plural stages and plural rows. The cassette shelf 105 is provided with a transfer shelf 123 in which the cassette 110 to be conveyed by the wafer transfer mechanism 125 described later is accommodated. In addition, above the cassette stage 114, a spare cassette shelf 107 is provided, and is configured to store the cassette 110 preliminarily.

The cassette conveyance apparatus (substrate storage container conveyance apparatus) 118 is provided between the cassette stage 114 and the cassette shelf 105. The cassette conveying apparatus 118 is a cassette elevator (substrate storage container elevating mechanism) 118a which can be elevated in the state holding the cassette 110 and the conveyance mechanism which can move horizontally in the state holding the cassette 110. The cassette conveyance mechanism (substrate storage container conveyance mechanism) 118b is provided. The cassette 110 is moved between the cassette stage 114, the cassette shelf 105, the spare cassette shelf 107, and the transfer shelf 123 by the linkage operation between the cassette elevator 118a and the cassette conveyance mechanism 118b. Configured to return to each other.

Wafer transfer mechanism (substrate transfer mechanism) 125 is provided at the rear of the cassette shelf 105. The wafer transfer mechanism 125 includes a wafer transfer device (substrate transfer device) 125a capable of rotating or directing the wafer 10 in a horizontal direction, and a wafer transfer device elevator for lifting and lowering the wafer transfer device 125a. (Substrate Transfer Device Lifting Mechanism) 125b is provided. On the other hand, the wafer transfer device 125a includes a tweezer 125c for holding the wafer 10 in a horizontal position. By the interlocking operation of the wafer transfer device 125a and the wafer transfer device elevator 125b, the wafer 10 is picked up from the cassette 110 on the transfer shelf 123 to be described later. Or the wafer 10 is discharged from the boat 11 to be stored in the cassette 110 on the transfer rack 123.

The process furnace 202 is provided above the rear part of the housing 111. An opening is provided in the lower end of the processing furnace 202. This opening is configured to be opened and closed by a furnace shutter (furnace opening and closing mechanism) 147. In addition, the structure of the process furnace 202 is mentioned later.

Below the processing furnace 202, a boat elevator (substrate holding tool lifting mechanism) 115 is provided as a lifting mechanism which lifts and lowers the boat 11 and transfers it into and out of the processing furnace 202. An arm 128 as a connector is provided on the platform of the boat elevator 115. The cover which supports the boat 11 vertically on the arm 128, and closes the lower end part of the process furnace 202 airtightly when the boat 11 is raised by the boat elevator 115. As a seal cap 9 is installed in a horizontal position.

The boat 11 includes a plurality of holding members, and the plurality of wafers 10 (for example, about 50 sheets to about 150 sheets) are aligned in a vertical direction in a state in which the wafers 10 are aligned in a horizontal position. Configured to hold. The detailed structure of the boat 11 is mentioned later.

Above the cassette shelf 105, the clean unit 134a provided with a supply pan and a dustproof filter is provided. The clean unit 134a is configured to distribute clean air, which is a clean atmosphere, into the housing 111.

In addition, a clean unit (not shown) including a supply fan and a dustproof filter is provided at the left end of the housing 111 opposite to the wafer transfer device elevator 125b and the boat elevator 115 side. Is installed. The clean air taken out from the clean unit (not shown) is configured to be sucked into the exhaust device (not shown) and exhausted to the outside of the housing 111 after the wafer transfer device 125a and the boat 11 are distributed. do.

(2) operation of the substrate processing apparatus

Next, the operation of the substrate processing apparatus 101 according to the present embodiment will be described.

First, the cassette 110 is placed on the cassette stage 114 so that the wafer 10 is in a vertical posture and the wafer entrance and exit of the cassette 110 faces upward by an in-process transfer device (not shown). Thereafter, the cassette 110 is rotated 90 ° in the longitudinal direction toward the rear of the housing 111 by the cassette stage 114. As a result, the wafer 10 in the cassette 110 is in a horizontal position, and the wafer entrance and exit of the cassette 110 faces rearward in the housing 111.

Next, the cassette 110 is automatically conveyed to the designated shelf position of the cassette shelf 105 to the spare cassette shelf 107 by the cassette conveying apparatus 118, and then temporarily stored after the cassette is stored. Transfer from the shelf 105 to the spare cassette shelf 107 to the transfer shelf 123 or directly to the transfer shelf 123.

When the cassette 110 is transferred to the transfer rack 123, the wafer 10 is picked up from the cassette 110 through the wafer entrance and exit by the tweezers 125c of the wafer transfer apparatus 125a, and the wafer transfer apparatus 125a. ) And the wafer transfer device elevator 125b are charged to the boat 11 behind the transfer room 124. The wafer transfer mechanism 125 which transfers the wafer 10 to the boat 11 returns to the cassette 110 and loads the next wafer 10 into the boat 11.

When the predetermined number of wafers 10 are loaded in the boat 11, the openings in the lower end of the processing furnace 202 that are closed by the furnace shutter 147 are opened by the furnace shutter 147. Subsequently, as the seal cap 9 is lifted by the boat elevator 115, the boat 11 holding the wafer 10 group to be processed is loaded into the processing furnace 202. After loading, the wafer 10 is subjected to arbitrary processing in the processing furnace 202. This processing will be described later. After the processing, the wafer 10 and the cassette 110 are taken out of the housing 111 in an order opposite to that described above.

(3) Configuration to processing

Next, the structure of the processing furnace 202 which is a substrate processing apparatus which concerns on this embodiment is demonstrated. 1 is a vertical cross-sectional view of a processing furnace of a substrate processing apparatus according to an embodiment of the present invention. 2 is a horizontal cross-sectional view of a processing furnace of the substrate processing apparatus according to one embodiment of the present invention. 3 is a schematic view showing a flow of a processing gas and an inert gas in the processing furnace. On the other hand, the processing furnace 202 which concerns on this embodiment is comprised as a CVD apparatus (batch type | mold hot-wall type reduced pressure CVD apparatus) as shown in FIG.

<Process tube>

The treatment furnace 202 has a longitudinal process tube 1 arranged longitudinally so that the centerline is vertical and fixedly supported by the housing 111. The process tube 1 has an inner tube 2 and an outer tube 3. The inner tube 2 and the outer tube 3 are each formed integrally in a cylindrical shape by a material having high heat resistance such as quartz (SiO ₂ ) or silicon carbide (SiC).

The inner tube 2 is formed in the cylindrical shape which closed the upper end and opened the lower end. In the inner tube 2, a processing chamber 4 for storing and processing wafers 10 stacked in multiple stages in a horizontal posture by a boat 11 serving as a substrate holding tool is formed. The lower opening of the inner tube 2 constitutes a furnace port 5 for entering and exiting the boat 11 holding the wafer 10 group. Therefore, the inner diameter of the inner tube 2 is set larger than the maximum outer diameter of the boat 11 holding the wafer 10 group. The outer tube 3 is somewhat larger than the inner tube 2, and is formed in a cylindrical shape with a closed upper end and an open lower end, and is covered with concentric circles to surround the outer side of the inner tube 2. The lower end part between the inner tube 2 and the outer tube 3 is hermetically sealed by the manifold 6 formed in circular ring shape, respectively. The manifold 6 is attached to the inner tube 2 and the outer tube 3 so that attachment or detachment is freely possible for maintenance inspection work or cleaning operation on the inner tube 2 and the outer tube 3. By the manifold 6 being supported by the housing 111, the process tube 1 is in a vertically fixed state.

<Exhaust unit>

An exhaust pipe 7a serving as an exhaust line for exhausting the atmosphere in the processing chamber 4 is connected to a part of the side wall of the manifold 6. The exhaust port 7 which exhausts the atmosphere in the process chamber 4 is formed in the connection part of the manifold 6 and the exhaust pipe 7a. The exhaust pipe 7a communicates with the exhaust passage 8 formed between the inner tubes 2 and the outer tubes 3 via the exhaust ports 7. The cross-sectional shape of the exhaust path 8 has a circular ring shape with a constant width. The exhaust pipe 7a is provided with a pressure sensor 7d, an APC (Auto®Pressure® Controller) valve 7b as a pressure regulating valve, and a vacuum pump 7c as a vacuum exhaust device in order from the upstream. The vacuum pump 7c is comprised so that a vacuum may be exhausted so that the pressure in the process chamber 4 may become predetermined pressure (vacuum degree). The pressure control part 236 is electrically connected to the APC valve 7b and the pressure sensor 7d. The pressure control unit 236 is configured to control the opening degree of the APC valve 7b based on the pressure detected by the pressure sensor 7d so that the pressure in the processing chamber 4 becomes the desired pressure at a desired timing. The exhaust unit according to the present embodiment is mainly constituted by the exhaust pipe 7a, the exhaust port 7, the exhaust path 8, the pressure sensor 7d, the APC valve 7b, and the vacuum pump 7c.

<Board board>

In the manifold 6, the seal cap 9 which closes the lower end opening of the manifold 6 is abutted from the lower side in the vertical direction. The seal cap 9 is formed in a disk shape equal to or larger than the outer diameter of the outer tube 3 and configured to be lifted in the vertical direction in a horizontal position by a boat elevator 115 vertically provided on the outside of the process tube 1. do.

On the seal cap 9, the boat 11 as a board | substrate holding tool holding the wafer 10 is vertically supported, and is supported. The boat 11 is provided with a pair of end plates 12 and 13 up and down, and the several holding member 14 provided perpendicularly between the end plates 12 and 13. As shown in FIG. The end plates 12 and 13 and the holding member 14 are made of a heat resistant material such as quartz (SiO ₂ ) or silicon carbide (SiC), for example. Each holding member 14 is provided with a plurality of holding grooves 15 at equal intervals in the longitudinal direction. Each holding member 14 is provided so that the holding grooves 15 face each other. The circumferential edges of the wafer 10 are respectively inserted into the holding grooves 15 of the same stage in the plurality of holding members 14, so that the plurality of wafers 10 are horizontally positioned and mutually It is comprised so that it may be laminated | stacked and hold | maintained in multiple stages in the state centered.

In addition, between the boat 11 and the seal cap 9, a pair of auxiliary end plates 16, 17 are supported by the plurality of auxiliary holding members 18, and are provided up and down. Each auxiliary holding member 18 is provided with a plurality of holding grooves 19. The holding groove 19 is configured such that, for example, a plurality of heat insulating plates 216 having a disk shape made of a heat resistant material such as quartz (SiO ₂ ) or silicon carbide (SiC) are loaded in multiple stages in a horizontal posture. The heat insulation board 216 is comprised so that heat from the heater unit 20 mentioned later may be hard to be transmitted to the manifold 6 side.

On the side opposite to the processing chamber 4 of the seal cap 9, a rotating mechanism 254 for rotating the boat is provided. The rotating shaft 255 of the rotating mechanism 254 penetrates the seal cap 9 and supports the boat 11 from below. It is comprised so that the wafer 10 may be rotated in the process chamber 4 by rotating the rotating shaft 255. The seal cap 9 is configured to be moved up and down in the vertical direction by the boat elevator 115 described above, whereby the boat 11 can be transported into and out of the processing chamber 4.

The drive control part 237 is electrically connected to the rotating mechanism 254 and the boat elevator 115. The drive control unit 237 is configured to control the rotating mechanism 254 and the boat elevator 115 to perform a desired operation at a desired timing.

<Heater unit>

Outside the outer tube 3, a heater unit 20 as a heating mechanism for heating the inside of the process tube 1 to a uniform or predetermined temperature distribution is provided so as to surround the outer tube 3. The heater unit 20 is vertically installed by being supported by the housing 111 of the substrate processing apparatus 101, and is configured as, for example, a resistance heating heater such as a carbon heater.

In the process tube 1, a temperature sensor (not shown) is provided as a temperature detector. The temperature control unit 238 is electrically connected to the heater unit 20 and the temperature sensor. The temperature control unit 238 is configured to control the energization state of the heater unit 20 based on the temperature information detected by the temperature sensor so that the temperature in the processing chamber 4 becomes a desired temperature distribution at a desired timing.

The heating unit which concerns on this embodiment is mainly comprised by the heater unit 20 and the temperature sensor not shown.

<Process Gas Supply Unit, Inert Gas Supply Unit>

On the side wall of the inner tube 2 (the position opposite to the exhaust hole 25 to be described later), a channel-shaped preliminary chamber 21 is connected to the inner tube 2 from the side wall of the inner tube 2. It protrudes outward in the radial direction and is formed to extend in the vertical direction. The side wall 26 of the preliminary chamber 21 constitutes a part of the side wall of the inner tube 2. Moreover, the inner wall of the preliminary chamber 21 is comprised so that a part of inner wall of the process chamber 4 may be formed. Inside the preliminary chamber 21, a process gas is extended in the stacking direction of the wafer 10 along the inner wall of the preliminary chamber 21 (that is, the inner wall of the process chamber 4) and supplies a process gas into the process chamber 4. Supply nozzles 22a and 22b are provided. Further, inside the preliminary chamber 21, it extends in the stacking direction of the wafer 10 along the inner wall of the preliminary chamber 21 (that is, the inner wall of the processing chamber 4) and along the circumferential direction of the wafer 10. The process gas supply nozzles 22a and 22b are provided between both sides, and a pair of inert gas supply nozzles 22c and 22d for supplying an inert gas into the process chamber 4 are provided.

The process gas inlet ports 23a, 23b which are upstream ends of the process gas supply nozzles 22a, 22b and the inert gas inlet ports 23c, 23d which are upstream ends of the inert gas supply nozzles 22c, 22d are respectively. The side wall of the manifold 6 penetrates radially outward of the manifold 6 and protrudes outside the process tube 1.

Process gas supply pipes 25a and 25b as process gas supply lines are respectively connected to the process gas inlet ports 23a and 23b.

In the process gas supply pipe 25a, TEMAH (Hf [NCH ₃ C ₂ H ₅ ] ₄ , Tetrakis ethylmethylamino hafnium) or TEMAZ (Zr [NCH ₃ C ₂ H ₅ ] ₄ ) as a liquid raw material is sequentially provided from the upstream side. , a process gas supply source 28a for supplying a process gas such as gas (TEMAH gas or TEMAZ gas) vaporized with tetrakis ethylmethylamino zirconium), a mass flow controller (MFC) 27a as a flow control device, and an on / off valve 26a Each is installed. In this way, as the processing gas sandwiched between the two sides by an inert gas, a gas having a pyrolysis temperature lower than the processing temperature (deposition temperature), for example, a gas in which TEMAH or TEMAZ is vaporized (TEMAH gas or TEMAZ gas) Used. On the other hand, a carrier gas supply pipe (not shown) is connected to the downstream side of the on-off valve 26a of the process gas supply pipe 25a. By supplying N ₂ gas as a carrier gas from such a carrier gas supply pipe, the processing gas can be diluted to promote the supply of the processing gas into the processing chamber 4 or the diffusion of the processing gas in the processing chamber 4. .

The process gas supply pipe 25b is a process gas supply source 28b for supplying a process gas such as, for example, O ₃ (ozone) gas in order from the upstream side, and a mass flow controller (MFC) as a flow control device ( 27b) and an on-off valve 26b are respectively provided. On the other hand, a carrier gas supply pipe (not shown) is connected to the downstream side of the on-off valve 26b of the processing gas supply pipe 25b. By supplying N ₂ gas as a carrier gas from such a carrier gas supply pipe, the processing gas can be diluted to promote supply of processing gas to the processing chamber 4 or diffusion of the processing gas in the processing chamber 4. .

Inert gas supply pipes 25c and 25d as inert gas supply lines are connected to the inert gas inlet portions 23c and 23d, respectively. Inert gas supply pipes 25c and 25d are sequentially supplied from the upstream side, for example, inert gas supply sources 28c and 28d for supplying inert gas such as N ₂ gas, Ar gas and He gas, and MFC as a flow control device ( mass flow controllers 27c and 27d and on-off valves 26c and 26d are respectively provided.

Mainly, process gas supply nozzles 22a and 22b, process gas supply pipes 25a and 25b, process gas supply sources 28a and 28b, MFC 27a and 27b, open / close valves 26a and 26b, and two not shown. The processing gas supply unit which concerns on this embodiment is comprised by the carrier gas supply pipe. In addition, the inert gas supply nozzles 22c and 22d, the inert gas supply pipes 25c and 25d, the inert gas supply sources 28c and 28d, the MFCs 27c and 27d, and the on / off valves 26c and 26d are mainly used. An inert gas supply unit according to the embodiment is configured.

The gas supply / flow control unit 235 is electrically connected to the MFCs 27a, 27b, 27c, 27d and the on / off valves 26a, 26b, 26c, 26d. The gas supply / flow control unit 235 is configured such that the type of gas supplied into the process chamber 4 is a desired gas species at a desired timing in each step described later, and the flow rate of the gas to be supplied is a desired amount at a desired timing, and And the MFCs 27a, 27b, 27c, 27d and the opening / closing valves 26a, 26b, 26c, 26d so that the concentration of the processing gas with respect to the inert gas becomes the desired concentration at the desired timing.

In the cylinder part of the process gas supply nozzle 22a, 22b in the process chamber 4, it is provided so that several jet ports 24a, 24b may arrange in a vertical direction, and the inert gas in the process chamber 4 In the cylinder part of supply nozzle 22c, 22d, several injection ports 24c, 24d are provided so that it may arrange in a vertical direction.

The process gas supply nozzles 22a and 22b and the inert gas supply nozzles 22c and 22d are provided in the preliminary chamber 21, whereby the ejection openings 24a and 24b and the inert gas supply nozzles of the process gas supply nozzles 22a and 22b. The ejection openings 24c and 24d of 22c and 22d are arrange | positioned radially outward of the inner tube 2 rather than the inner peripheral surface of the inner tube 2.

The number of blower outlets 24a, 24b, 24c, and 24d is configured to match the number of wafers 10 held by the boat 11, for example. The positions of the heights of the ejection openings 24a, 24b, 24c, and 24d are set to face the spaces between the wafers 10 adjacent to each other, for example, above and below held by the boat 11. On the other hand, the diameters of the jets 24a, 24b, 24c, and 24d may be set to different sizes so that the gas supply amount to each wafer 10 is uniform. In addition, you may provide the ejection openings 24a, 24b, 24c, 24d one by one with respect to several wafer 10 (for example, one with respect to several wafer 10).

At the position opposite the process gas supply nozzles 22a and 22b as the side wall of the inner tube 2, that is, the position opposite to the preliminary chamber 21 by 180 °, exhaust, which is, for example, a slit through hole, is provided. The ball 25 is elongated in the vertical direction. The process chamber 4 and the exhaust passage 8 communicate with each other via an exhaust hole 25. Therefore, the processing chamber 4 is supplied from the ejection openings 24a and 24b of the processing gas supply nozzles 22a and 22b into the processing chamber 4 from the ejection openings 24a and 24b of the inert gas supply nozzles 22c and 22d. ), The processing gas supplied into the exhaust gas flows into the exhaust path 8 through the exhaust hole 25, flows into the exhaust pipe 7a through the exhaust port 7, and is discharged to the outside of the processing furnace 202. . In addition, the exhaust hole 25 is not limited to the case where it is comprised as a slit-shaped through hole, and may be comprised by the some hole.

2, the straight line connecting the process gas supply nozzle 22a and the exhaust hole 25 and the first straight line connecting the process gas supply nozzle 22b and the exhaust hole 25 are each a wafer. It is configured to pass near the center of (10). On the other hand, the direction of the blower openings 24a and 24b is set substantially in parallel with these 1st straight lines. The second straight line connecting the inert gas supply nozzle 22c and the exhaust hole 25 and the third straight line connecting the inert gas supply nozzle 22c and the exhaust hole 25 are the process gas supply nozzle 22a. And a first straight line connecting the exhaust hole 25 and a first straight line connecting the process gas supply nozzle 22b and the exhaust hole 25 from each other. In addition, the direction of blower outlet 24c, 24d may be set to the direction open | released outside these straight lines, and may be set to be substantially parallel with these straight lines. That is, the blower opening 24c may be comprised so that it may open in the direction opened outward rather than a 2nd straight line, and may be comprised so that it may open substantially in parallel with a 2nd straight line. In addition, the direction of the blower outlet 24d may be comprised so that it may open in the direction open | released rather than a 3rd straight line, and you may be comprised so that it may open substantially in parallel with a 3rd straight line.

Therefore, as shown in FIG. 3, when the processing gas and the inert gas are simultaneously supplied into the processing chamber 4, the processing supplied into the processing chamber 4 from the ejection openings 24a and 24b of the processing gas supply nozzles 22a and 22b. The gas streams 30a and 30b of the gas are separated from both sides by the gas streams 30c and 30d of the inert gas supplied into the process chamber 4 from the ejection openings 24c and 24d of the inert gas supply nozzles 22c and 22d. The flow path is restricted to the flow path. For example, when an inert gas is supplied to the gap between the periphery of the wafer 10 and the processing chamber 4, the pressure in this region becomes relatively high, and the processing is performed between the periphery of the wafer 10 and the gap between the processing chamber 4. Inflow of gas is suppressed. As a result, the processing gas supply to the vicinity of the center of each wafer 10 is promoted, and the amount of processing gas supply in the vicinity of the outer periphery and the center of each wafer 10 is further uniformized. In addition, the processing gas in the gap between the periphery of the wafer 10 and the processing chamber 4 is diluted by an inert gas, and the formation of an excessively thick film in the vicinity of the outer circumference of the wafer 10 is suppressed.

<Controller>

The gas supply / flow control unit 235, the pressure control unit 236, the drive control unit 237, and the temperature control unit 238 constitute an operation unit and an input / output unit, and are electrically connected to the main control unit 239 that controls the entire substrate processing apparatus. Connected. The gas supply / flow control unit 235, the pressure control unit 236, the drive control unit 237, the temperature control unit 238, and the main control unit 239 are configured as the controller 240.

(4) substrate processing process

Next, one process of the manufacturing process of the semiconductor device performed by the substrate processing apparatus 101 described above will be described. As described above, the processing gas sandwiched between the two sides by an inert gas is a gas whose pyrolysis temperature is lower than the processing temperature (deposition temperature), for example, a gas in which TEMAH or TEMAZ is vaporized (TEMAH gas or TEMAZ gas). Etc. can be used. Hereinafter, an example in which a HfO ₂ film is formed by an ALD (Atomic Layer Deposition) method using a TEMAH gas and an O ₃ gas as the processing gas will be described. In the following description, the operation of each part constituting the substrate processing apparatus 101 is controlled by the controller 240.

The ALD method, which is one of CVD (Chemical Vapor Deposition) methods, alternately supplies at least two types of mutually reacting processing gases used for film formation on a substrate under a certain film forming condition (temperature, time, etc.) alternately. It adsorbs on a board | substrate by 1 atomic unit, and forms a film using surface reaction. At this time, the film thickness is controlled by the number of cycles for supplying the reactive gas (for example, if the film formation rate is 1 ms / cycle, 20 cycles are performed when a film of 20 ms is formed). For example, when HfO ₂ film is formed by ALD method, TEMAH (Hf [NCH ₃ C ₂ H ₅ ] ₄ , Tetrakis ethylmethylamino hafnium) gas and O ₃ (ozone) gas are used for high quality at a low temperature of 180 to 250 ° C. The film formation of is possible.

First, as described above, the group of wafers 10 to be processed is loaded into the boat 11 and brought into the processing chamber 4. After bringing the boat 11 into the processing chamber 4, the pressure in the processing chamber 4 is within a range of 10 to 1000 Pa, for example, 50 Pa, and the temperature in the processing chamber 4 is 180 to 250 ° C. For example, when it becomes 220 degreeC, this cycle is repeated the predetermined number of times, making four steps (steps 1-4) shown below into 1 cycle. On the other hand, by rotating the rotating mechanism 254 during the following steps 1 to 4, the flow rate of the gas supplied to the surface of the wafer 10 can be made more uniform.

<Step 1>

The process gas supply nozzle 22a opens the open / close valve 26a of the process gas supply pipe 25a and the APC valve 7b of the exhaust pipe 7a together, and exhausts the inside of the process chamber 4 by the vacuum pump 7c. TEMAH gas as the processing gas is supplied into the processing chamber 4 from the blower outlet 24a of the (). TEMAH gas is diluted supplied by the carrier gas (N ₂ gas) supplied from the carrier gas supply pipe (not shown).

On the other hand, TEMAH gas is a gas having a great influence on in-plane uniformity (in-plane uniformity of HfO ₂ film thickness formed on the surface of the wafer 10) of substrate processing. Therefore, in step 1 which concerns on this embodiment, when TEMAH gas is supplied into the process chamber 4, the switching valves 26c, 26d of the inert gas supply pipes 25c, 25d are opened simultaneously, and an inert gas supply nozzle ( N ₂ gas as an inert gas is supplied into the process chamber 4 from the blowing ports 24c and 24d of 22c and 22d, respectively. As a result, the TEMAH gas supplied into the process chamber 4 from the jet port 24a of the process gas supply nozzle 22a is supplied into the process chamber 4 from the jet ports 24c and 24d of the inert gas supply nozzles 22c and 22d. The N ₂ gas is interposed from both sides, and the flow path is restricted. For example, when an inert gas is supplied between the periphery of the wafer 10 and the process chamber 4, the pressure in this region becomes relatively high, and the TEMAH is spaced between the periphery of the wafer 10 and the process chamber 4. It is suppressed that gas flows in (emission). As a result, the supply of TEMAH gas to the vicinity of the center of each wafer 10 is promoted, and the supply amount of the TEMAH gas in the vicinity of the outer periphery and the center of each wafer 10 is further uniformized. Further, the TEMAH gas is diluted by the N ₂ gas between the periphery of the wafer 10 and the processing chamber 4, and the formation of an excessively thick film in the vicinity of the outer circumference of the wafer 10 is suppressed. In this way, the inert gas (N ₂ gas) supplied from the inert gas supply pipes 25c and 25d in step 1 restricts the flow path of the processing gas and assists the gas supply to the wafer 10 to be uniform. It functions as (assist gas).

On the other hand, when the inert gas supply nozzles 22c and 22d supply the TEMAH gas from the process gas supply nozzle 22a, the inert gas supply nozzles 22c and 22d supply N ₂ gas at a flow rate equal to or higher than the flow rate of the TEMAH gas supplied from the process gas supply nozzle 22a. It is desirable to. That is, the flow rate of the N ₂ gas supplied from the ejection port 24c of the inert gas supply nozzle 22c and the flow rate of the N ₂ gas supplied from the ejection port 24d of the inert gas supply nozzle 22d are respectively processed gas supply nozzles. It is preferable to make it more than the flow volume of the TEMAH gas supplied from the blower outlet 24a of 22a. The flow rates of the TEMAH gas and the flow rates of the N ₂ gas are controlled by the MFCs 27a, 27c, and 27d, respectively. As a result, the supply of TEMAH gas to the vicinity of the center of each wafer 10 is further promoted. Further, dilution of the TEMAH gas by the N ₂ gas is further promoted between the periphery of the wafer 10 and the processing chamber 4.

During the execution of step 1, the pressure in the processing chamber 4 is adjusted within a range of 20 to 900 Pa, for example, 50 Pa. In addition, the supply flow volume of the TEMAH gas from the process gas supply nozzle 22a is adjusted to be 0.3 g / min, for example, in the range of 0.01-0.35 g / min. The supply flow rate of the N ₂ gas (carrier gas) from the carrier gas supply pipe (not shown) connected to the process gas supply pipe 25a is adjusted to be 1.0 slm, for example, in the range of 0.1 to 0.5 g / slm. . The supply flow rates of the N ₂ gas (assist gas) from the inert gas supply nozzles 22c and 22d are each adjusted within a range of 20 to 30 slm, for example, to 30 slm. In addition, the temperature in the process chamber 4 is adjusted so that it may become 220 degreeC, for example as 180-250 degreeC. In addition, the time (the execution time of step 1) which exposes the wafer 10 to TEMAH gas is 30 to 180 second, for example, shall be 120 second.

By supplying the TEMAH gas into the processing chamber 4, gas molecules of the TEMAH gas react with the surface portion of the underlayer or the like on the wafer 10 (chemical adsorption).

<Step 2>

The opening / closing valve 26a of the processing gas supply pipe 25a is closed to stop the supply of TEMAH gas to the processing chamber 4. At this time, the APC valve 7b of the exhaust pipe 7a is kept open, and the vacuum chamber 7c is evacuated into the processing chamber 4 until it becomes 20 Pa or less, for example, and the remaining TEMAH gas is discharged. It removes from the process chamber 4. In addition, by opening and closing the valves 26c and 26d of the inert gas supply pipes 25c and 25d and supplying the N ₂ gas into the processing chamber 4, the effect of excluding the remaining TEMAH gas from the processing chamber 4 is further increased. Increases. In Step 2, the N ₂ gas supplied from the inert gas supply pipes 25c and 25d functions as a purge gas for promoting the discharge of residual gas in the processing chamber 4.

During the execution of step 2, the pressure in the processing chamber 4 is adjusted to be 20 Pa or less, for example. In addition, the adjustment such that the supply flow rate of N ₂ gas (purge gas) from the inert gas supply nozzles (22c, 22d) are, as in the range of 0.5 ~ 20slm respectively, e.g. 12slm. In addition, the temperature in the process chamber 4 is adjusted so that it may become 220 degreeC, for example as 180-250 degreeC. In addition, the execution time of step 2 is made into 60 second in the range of 30 to 150 second.

<Step 3>

Process gas while opening / closing valve 26b of process gas supply pipe 25b with the APC valve 7b of exhaust pipe 7a open, and evacuating the inside of process chamber 4 by vacuum pump 7c. O ₃ gas as a processing gas is supplied into the processing chamber 4 from the jet port 24b of the supply nozzle 22b. The O ₃ gas is diluted and supplied by a carrier gas (N ₂ gas) supplied from a carrier gas supply pipe (not shown).

On the other hand, O ₃ gas is a gas having a small influence on in-plane uniformity (in-plane uniformity of HfO ₂ film thickness formed on the surface of wafer 10) of substrate processing. Therefore, in the step 3 according to this exemplary type state, and to not supply the N ₂ gas (assist gas) from the inert gas supply nozzles (22c, 22d). However, when the process gas supplied in step 3 is a gas which affects in-plane uniformity of substrate processing, also in step 3, similarly to step 1, the N ₂ gas (assist gas) is supplied from the inert gas supply nozzles 22c and 22d. Is preferably supplied. In addition, even when O ₃ gas is supplied, N ₂ gas (assist gas) may be supplied from the inert gas supply nozzles 22c and 22d.

During the execution of step 3, the pressure in the processing chamber 4 is adjusted within a range of 20 to 900 Pa, for example, 50 Pa. The supply flow rate of the O ₃ gas from the process gas supply nozzle 22b is adjusted to be 17 slm, for example, within the range of 6 to 20 slm. The supply flow rate of the N ₂ gas (carrier gas) from a carrier gas supply pipe (not shown) connected to the processing gas supply pipe 25b is within a range of 0 to 2 slm, and is adjusted to be 0.5 slm, for example. In addition, the temperature in the process chamber 4 is adjusted so that it may become 220 degreeC, for example as 180-250 degreeC. In addition, the time (the execution time of step 3) which exposes the wafer 10 to TEMAH gas is in the range of 10 to 300 second, for example, 120 seconds.

By supplying the O ₃ gas into the processing chamber 4, the TEMAH gas and the O ₃ gas chemically adsorbed on the surface of the wafer 10 react with each other to form a HfO ₂ film on the wafer 10.

<Step 4>

The opening / closing valve 26b of the processing gas supply pipe 25b is closed to stop the supply of the O ₃ gas into the processing chamber 4. At this time, the APC valve 7b of the exhaust pipe 7a is kept open, and the vacuum chamber 7c exhausts the inside of the processing chamber 4 until it becomes 20 Pa or less, and the remaining O ₃ gas is discharged. Excluded from the inside. In addition, when the on / off valves 26c and 26d of the inert gas supply pipes 25c and 25d are opened to supply the N ₂ gas into the processing chamber 4, the effect of excluding residual O ₃ gas from the processing chamber 4 is further increased. Increases. In Step 4, the N ₂ gas supplied from the inert gas supply pipes 25c and 25d functions as a purge gas for promoting the discharge of residual gas in the processing chamber 4.

During the execution of step 4, the pressure in the processing chamber 4 is adjusted to be 20 Pa or less, for example. In addition, the adjustment such that the supply flow rate of N ₂ gas (purge gas) from the inert gas supply nozzles (22c, 22d) are, as in the range of 0.5 ~ 20slm respectively, e.g. 12slm. In addition, the temperature in the process chamber 4 is adjusted so that it may become 220 degreeC, for example as 180-250 degreeC. In addition, the execution time of step 2 is made into 60 second in the range of 30 to 150 second.

Then, the above steps 1 to 4 are used as one cycle, and the cycle is repeated several times to form a HfO ₂ film having a predetermined thickness on the wafer 10. Then, the boat 11 which hold | maintained the group of the wafer 10 after a process is carried out from the process chamber 4, and the board | substrate process process which concerns on this embodiment is complete | finished.

(5) Effect according to this embodiment

According to this embodiment, one or more effects shown below are exhibited.

According to this embodiment, in the above-mentioned step 1, the TEMAH gas supplied into the process chamber 4 from the blower outlet 24a of the process gas supply nozzle 22a is the blower outlet 24c of the inert gas supply nozzles 22c and 22d. , 24d) is interposed from both sides by the N ₂ gas supplied into the processing chamber 4, and the flow path is limited. For example, when the N ₂ gas is supplied between the periphery of the wafer 10 and the processing chamber 4, the pressure in this region becomes relatively high, and the gap between the periphery of the wafer 10 and the processing chamber 4 is increased. The flow of TEMAH gas is suppressed. As a result, the supply of TEMAH gas to the vicinity of the center of each wafer 10 is promoted, and the amount of TEMAH gas supplied in the vicinity of the outer circumference and near the center of each wafer 10 is further uniformized. Further, the TEMAH gas is diluted by the N ₂ gas between the periphery of the wafer 10 and the processing chamber 4, and the formation of an excessively thick film in the vicinity of the outer circumference of the wafer 10 is suppressed.

On the other hand, in this embodiment, when the inert gas supply nozzles 22c and 22d supply the TEMAH gas from the process gas supply nozzle 22a, the flow rate is equal to or higher than the flow rate of the TEMAH gas supplied from the process gas supply nozzle 22a. By supplying the N ₂ gas, the supply of the TEMAH gas to the vicinity of the center of each wafer 10 is further promoted. Further, dilution of the TEMAH gas by the N ₂ gas is further promoted between the periphery of the wafer 10 and the processing chamber 4, and the HfO ₂ film is formed too thick near the outer periphery of the wafer 10. It is further suppressed.

In addition, according to the present embodiment, since the O ₃ gas is a gas having a small influence on the in-plane uniformity of the HfO ₂ film thickness formed on the surface of the wafer 10, in step 3, the inert gas supply nozzles 22c and 22d are used. It is assumed that supply of N ₂ gas (assist gas) from the () is not performed. However, also, it may be supplied to N ₂ gas (assist gas) from the inert gas supply nozzles (22c, 22d) as with Step 1 to Step 3.

In this case, the O ₃ gas supplied from the jetting port 24b of the processing gas supply nozzle 22b into the processing chamber 4 is injected into the processing chamber 4 from the jetting openings 24c and 24d of the inert gas supply nozzles 22c and 22d. The supplied N ₂ gas is interposed from both sides, and the flow path is limited. For example, when the N ₂ gas is supplied between the periphery of the wafer 10 and the processing chamber 4, the pressure in this region becomes relatively high, and the gap between the periphery of the wafer 10 and the processing chamber 4 is increased. O ₃ gas is suppressed from flowing. As a result, the supply of O ₃ gas to the vicinity of the center of each wafer 10 is promoted, and the amount of O ₃ gas supplied in the vicinity of the outer circumference and near the center of each wafer 10 is further uniformized. In addition, the O ₃ gas is diluted by the N ₂ gas at the gap between the periphery of the wafer 10 and the processing chamber 4, and the formation of an excessively thick film in the vicinity of the outer circumference of the wafer 10 is suppressed.

On the other hand, in the present embodiment, when the inert gas supply nozzles 22c and 22d supply the O ₃ gas from the process gas supply nozzle 22a, the flow rate of the O ₃ gas supplied from the process gas supply nozzle 22b is equal to or greater than that. When the N ₂ gas is supplied at a flow rate, the supply of the O ₃ gas to the vicinity of the center of each wafer 10 is further promoted. Further, dilution of the O ₃ gas by the N ₂ gas is further promoted between the periphery of the wafer 10 and the processing chamber 4, and the HfO ₂ film is formed too thick near the outer periphery of the wafer 10. It is further suppressed.

In addition, in steps 2 and 4 of the present embodiment, when the on / off valves 26c and 26d of the inert gas supply pipes 25c and 25d are opened to supply the N ₂ gas into the processing chamber 4, the remaining TEMAH gas and The effect of removing O ₃ gas from the process chamber 4 is further enhanced. As a result, the time required for the execution of steps 2 and 4 can be shortened and the productivity of the substrate processing can be increased.

Moreover, according to this embodiment, it is not necessary to provide ring-shaped rectifying plates, respectively, between the periphery of each wafer 10 supported by the boat 11 and the inner wall of the processing chamber 4. Therefore, it is not necessary to ensure the lamination pitch of the wafer 10 widely, and it can suppress that the number of sheets which can be batch-processed is small. As a result, the productivity of substrate processing can be improved.

Moreover, according to this embodiment, it is not necessary to provide ring-shaped rectifying plates, respectively, between the periphery of each wafer 10 supported by the boat 11 and the inner wall of the processing chamber 4. Therefore, the production cost and substrate processing cost of the boat 11 can be reduced.

<2nd embodiment of this invention>

In the above-described embodiment, the processing chamber 4 provided with one or more processing gas supply nozzles 22a and 22b for supplying the processing gas into the processing chamber 4 and the processing gas supply nozzles 22a and 22b interposed therebetween. ), A pair of inert gas supply nozzles 22c and 22d for supplying an inert gas were respectively included. The processing gas (for example, TEMAH gas) supplied from the processing gas supply nozzle 22a and the processing gas (for example, O ₃ gas) supplied from the processing gas supply nozzle 22b are each inert gas supply nozzles. It was placed between both sides by the inert gas from (22c, 22d).

However, the present invention is not limited to this embodiment. That is, when in-plane uniformity of the supply amount of any one kind of processing gas among the plurality of types of process gases supplied from one or more process gas supply nozzles affects the in-plane uniformity of substrate processing (in-plane uniformity of other process gas supply amounts In the case where this does not affect the in-plane uniformity of the substrate treatment), only the processing gas that affects the in-plane uniformity of the substrate treatment is interposed from both sides by an inert gas, and the in-plane uniformity of the substrate treatment is greatly affected. Process gas that is not supplied does not have to be sandwiched from both sides by an inert gas.

In this case, at least one process gas supply nozzle (a process gas supply nozzle for supplying a process gas that does not significantly affect the in-plane uniformity of the substrate process) of the one or more process gas supply nozzles is another process gas supply nozzle (substrate process When supplying a process gas from the process gas supply nozzle which supplies the process gas which affects the in-plane uniformity of this process, you may be comprised so that an inert gas may be supplied by the flow volume more than the flow volume of the process gas supplied from the said other process gas supply nozzle.

For example, if the in-plane uniformity of the TEMAH gas supply greatly influences the in-plane uniformity of the substrate treatment, while the in-plane uniformity of the O ₃ gas supply does not significantly affect the in-plane uniformity of the substrate treatment, the TEMAH gas The bay may be sandwiched between both sides by N ₂ gas, and the O ₃ gas may not be sandwiched between both sides by N ₂ gas. And when supplying TEMAH gas from the process gas supply nozzle 22a, the inert gas supply nozzle 22c and the process gas supply nozzle 22b are the flow rates more than the flow volume of the TEMAH gas supplied from the process gas supply nozzle 22a. the N ₂ gas may be configured to supply, respectively. If the inert gas supply nozzle 22d is not provided, the structure of the substrate processing apparatus can be simplified, and the substrate processing cost can be reduced.

<3rd embodiment of this invention>

Below, 3rd Embodiment of this invention is described, referring FIG. In the present embodiment, the inert gas ejection ports 24c and 24d inject the inert gas into the space (between the gaps) between the inner wall of the processing chamber 4 and the outer circumferential portion of the wafer 10, not in the center direction of the wafer 10. The point of opening is different from the above-mentioned embodiment. The other structure is the same as that of embodiment mentioned above.

The straight line connecting the process gas supply nozzle 22a and the exhaust port 25 and the straight line connecting the process gas supply nozzle 22b and the exhaust port 25 are respectively configured to pass near the center of the wafer 10. On the other hand, the directions of the processing gas ejection ports 24a and 24b are set substantially in parallel with these straight lines. In other words, the processing gas ejection openings 24a and 24b are opened to supply the processing gas toward the center of the wafer 10. In addition, the straight line connecting the inert gas supply nozzle 22c and the exhaust port 25 and the straight line connecting the inert gas supply nozzle 22c and the exhaust port 25 connect the process gas supply nozzle 22a and the exhaust port 25. It is comprised so that the straight line to connect and the straight line which connects the process gas supply nozzle 22b and the exhaust port 25 may be between both sides. On the other hand, the directions of the inert gas ejection openings 24c and 24d are set in the direction which is opened outward from these straight lines. The inert gas ejection openings 24c and 24d open to inject the inert gas into the space (between the gaps) between the inner wall of the processing chamber 4 and the outer circumferential portion of the wafer 10, not in the center direction of the wafer 10. On the other hand, the side wall of the preliminary chamber 21 is comprised so that it may become substantially parallel with the direction of the inert gas ejection openings 24c and 24d.

For this reason, as shown in FIG. 10, when process gas and an inert gas are simultaneously supplied to the process chamber 4, the process chamber 4 may be discharged from process gas ejection openings 24a and 24b of process gas supply nozzles 22a and 22b. The gas flow (arrow shown in solid lines in the drawing) of the processing gas supplied into the gas is supplied to the processing chamber 4 from the inert gas ejection ports 24c and 24d of the inert gas supply nozzles 22c and 22d. The gas flows (arrows shown by solid lines in the drawing) are placed between the two sides, and the flow path is restricted. For example, when an inert gas is supplied to the space between the periphery of the wafer 10 and the processing chamber 4, the pressure in this region becomes relatively high, and the processing is performed between the periphery of the wafer 10 and the processing chamber 4. Inflow of gas is suppressed. As a result, the supply of the processing gas to the vicinity of the center of each wafer 10 is promoted, and the amount of processing gas supply in the vicinity of the outer circumference and the center of each wafer 10 is further uniformized. In addition, the process gas is diluted by an inert gas in the gap between the periphery of the wafer 10 and the processing chamber 4, and the formation of an excessively thick film in the vicinity of the outer circumference of the wafer 10 is suppressed.

The inert gas ejection openings 24c and 24d of the inert gas supply nozzles 22c and 22d are inert in the space between the inner wall of the processing chamber 4 and the outer peripheral portion of the wafer 10, not in the center direction of the wafer 10. It is opened to inject gas. Therefore, the inert gas supplied into the process chamber 4 from the inert gas ejection ports 24c and 24d of the inert gas supply nozzles 22c and 22d mainly flows into the space between the peripheral edge of the wafer 10 and the process chamber 4. It does not flow substantially in the area | region where the wafer 10 group is hold | maintained. As a result, dilution by the inert gas of the processing gas supplied to the wafer 10 is suppressed, and a decrease in the film formation speed is avoided.

In addition, since the inflow of TEMAH gas or O ₃ gas to the gap between the peripheral edge of the wafer 10 and the processing chamber 4 is suppressed, the film formation on the side wall of the processing chamber 4 (the side wall of the inner tube 2), Adherence of raw material components and generation of foreign matter in the processing chamber 4 are suppressed. Therefore, the interval of the maintenance cycle of the substrate processing apparatus 101 can be increased, and the productivity of the substrate processing apparatus 101 can be improved.

<4th embodiment of this invention>

Below, 4th Embodiment of this invention is described, referring FIG. This embodiment differs from the above-described embodiment in that the rectifying plates 31c and 31d are included in the processing chamber 4. The other structure is the same as that of embodiment mentioned above.

The rectifying plates 31c and 31d are perpendicular to the outside of the inert gas supply nozzles 22c and 22d which are the inside (wafer 10 side) of the processing chamber 4 from the inert gas ejection openings 24c and 24d serving as inert gas ejection openings. Installed to extend. Specifically, the rectifying plate 31c is provided to extend in the vertical direction between the inert gas supply nozzle 22c and the wafer 10, and is provided to be substantially parallel to the direction of the inert gas ejection port 24c. The rectifying plate 31d is provided to extend in the vertical direction between the inert gas supply nozzle 22d and the wafer 10, and is provided to be substantially parallel to the direction of the inert gas processing gas ejection port 24d. Between the rectifying plate 31c and the side wall of the preliminary chamber 21, a gas flow path for inducing the flow of the inert gas supplied from the inert gas ejection port 24c is formed, and the rectifying plate 31d and the preliminary chamber 21 are formed. Between the side walls, a gas flow path for inducing the flow of the inert gas supplied from the inert gas processing gas ejection port 24d is formed. The rectifying plates 31c and 31d may be attached to the inert gas supply nozzles 22c and 22d, or may be directly attached to the inner wall of the inner tube 2 or the like.

By configuring in this way, inflow of inert gas to the area | region where the wafer 10 group is hold | maintained is further suppressed. As a result, dilution by the inert gas of the process gas supplied to the wafer 10 is suppressed, and the fall of the film-forming speed is further avoided.

<Fifth embodiment of the present invention>

EMBODIMENT OF THE INVENTION Below, 5th Embodiment of this invention is described, referring FIG. The process chamber 4 which concerns on this embodiment has the process gas exhaust port 35 which exhausts a process gas instead of the exhaust port 25, and the inert gas exhaust port 35c, 35d which exhausts an inert gas, respectively. It is different from one embodiment. The other structure is the same as that of embodiment mentioned above.

The process gas exhaust port 35 is configured similarly to the exhaust port 25 described above. That is, the process gas exhaust port 35 is a sidewall of the inner tube 2 and is perpendicular to the preliminary chamber 21 at a position opposite to the preliminary chamber 21, that is, at a position on the exhaust port 7 side as a slit-shaped through hole. It is opened long and thin. Further, the inert gas exhaust ports 35c and 35d are each formed long and thin in the vertical direction as slit-shaped through holes at positions where the processing gas exhaust ports 35 are interposed from both sides.

In this way, the process gas supplied from the process gas ejection openings 24a and 24b is exhausted from the process gas exhaust port 35, and the inert gas supplied from the inert gas ejection openings 24c and 24d is converted into the inert gas exhaust port ( 35c and 35d), respectively. As a result, the gas flow in the vicinity of the process gas exhaust port 35 and the inert gas exhaust ports 35c and 35d is smoothed, respectively.

<Other embodiments of the present invention>

This invention is not limited to the said embodiment, Needless to say that it can change in various ways in the range which does not deviate from the summary.

For example, the preliminary chamber 21 does not need to be provided in the inner tube 2. That is, as illustrated in FIG. 9, the process gas supply nozzles 22a and 22b and the inert gas supply nozzles 22c and 22d are disposed radially inward of the inner tube 2 than the inner circumferential surface of the inner tube 2. You may be.

In addition, as mentioned above, the number of blower openings 24a, 24b, 24c, and 24d is not limited to the case where the number of the wafers 10 matches. For example, the ejection openings 24a, 24b, 24c, and 24d are not limited to the case where the ejection openings 24a, 24b, 24c, and 24d are respectively provided at the height positions corresponding to the stacked wafers 10 (as many as the number of wafers 10). Instead of this, for example, the wafers 10 may be provided one by one.

In addition, as described above, the exhaust hole 25 formed in the side wall of the inner tube 2 is not limited to being configured as a slit-shaped through hole, and for example, a plurality of long holes and a circular shape. Ball, polygonal ball, or the like. When the exhaust hole 25 is constituted by a plurality of holes, the number of the holes can be increased or decreased without being limited to the number of the wafers 10. For example, it is limited to the case where the plurality of balls constituting the exhaust hole 25 are provided at the height positions corresponding to the stacked wafers 10 (the number equal to the number of wafers 10). For example, you may provide with respect to the several wafer 10 one by one, for example. In addition, when the exhaust hole 25 is constituted as a series of long slits, the width thereof may be increased or decreased above and below the inner tube 2. In addition, when the exhaust hole 25 is constituted by a plurality of balls, the diameters of the plurality of balls may be increased or decreased in the upper and lower portions of the inner tube 2.

In the above embodiment, the case where the processing is performed on the wafer 10 has been described. The processing target is a photo-mask, a printed circuit board, a liquid crystal panel, a compact disc (CD). ) And a magnetic disk may be used.

In the above-described embodiment, the deposition of the film by the ALD method has been described, but the present invention is not limited to ALD, but can be suitably applied to the deposition of the film by the CVD method. Moreover, the substrate processing method which concerns on this invention can be applied to the whole substrate processing methods, such as an oxide film formation method and a diffusion method.

<Examples>

Hereinafter, the Example of this invention is described with a comparative example. 8 is a diagram showing a substrate processing result according to an embodiment of the present invention. 7 is a diagram showing a substrate processing result according to a comparative example. In addition, in the present Example, the substrate processing apparatus and substrate processing process which concern on 1st Embodiment are used.

In the embodiment shown in FIG. 8, while supplying the amine-based Zr source gas as the processing gas from the processing gas supply nozzle 22a, O ₃ gas is supplied as the processing gas from the processing gas supply nozzle 22b to the ALD method. To form a Zr oxide film. The in-plane uniformity of the film thickness of the Zr oxide film is greatly influenced by the in-plane uniformity of the supply amount of the amine Zr source gas. Therefore, in the present Example, it is supposed that the amine Zr raw material gas is sandwiched from both sides with N ₂ gas (inert gas). Specifically, when the amine-based Zr source gas is supplied from the process gas supply nozzle 22a in step 1, the N ₂ gas is supplied from the inert gas supply nozzle 22c and the process gas supply nozzle 22b at a flow rate of 30 slm, respectively. was [on the other hand, N ₂ gas (inert gas), the allowable range of the supply flow is, for example, 20 ~ 30slm]. As a result, as shown in FIG. 7, in the wafer 10 loaded on the upper portion of the boat 11, the average film thickness of the Zr oxide film is 33.7 (Å) and the in-plane uniformity is ± 3.9 (%). In the wafer 10 loaded in the middle portion 11, the average film thickness of the Zr oxide film is 33.6 (3.6), and the in-plane uniformity is ± 3.7 (%), and the wafer 10 loaded in the lower part of the boat 11 is In, the average film thickness of the Zr oxide film was 33. 6 (kPa), and the in-plane uniformity became ± 4.1 (%), and it was confirmed that the in-plane uniformity of the substrate treatment was remarkably improved as compared with the comparative example described later. In addition, the uniformity between wafers became ± 0.2 (%), and it was confirmed that the uniformity between the substrates to be treated was significantly improved as compared with the comparative example described later.

In the comparative example shown in Figure 7, when supplying a amine Zr source gas from step process gas supply nozzle 1 (22a), N ₂ gas from the inert gas supply nozzles (22c, 22d) and a process gas supply nozzle (22b) Did not feed. Conditions other than that are substantially the same as the Example shown in FIG. As a result, as shown in FIG. 7, in the wafer 10 loaded on the upper portion of the boat 11, the average film thickness of the Zr oxide film is 37.6 (Å) and the in-plane uniformity is ± 9.7 (%). In the wafer 10 loaded in the middle portion 11, the average film thickness of the Zr oxide film is 36.7 (Å) and the in-plane uniformity is ± 8.5 (%), and the wafer 10 loaded in the lower part of the boat 11 is In this case, the average film thickness of the Zr oxide film was 36.5 (kPa), the in-plane uniformity was ± 7.3 (%), and the uniformity between wafers was ± 1.4 (%).

Preferred Embodiments of the Invention

Below, it adds about the preferable aspect of this invention.

According to the first aspect of the present invention,

A processing chamber for storing and processing substrates stacked in multiple stages in a horizontal position;

A processing gas supply unit supplying one or more kinds of processing gases into the processing chamber;

An inert gas supply unit for supplying an inert gas into the processing chamber;

An exhaust unit for exhausting the inside of the processing chamber

And,

The processing gas supply unit includes one or more processing gas supply nozzles which extend in the stacking direction of the substrate so as to follow the inner wall of the processing chamber and supply the processing gas into the processing chamber,

The inert gas supply unit extends in the stacking direction of the substrate so as to follow the inner wall of the process chamber, and is provided so as to sandwich the process gas supply nozzles from both sides along the circumferential direction of the substrate, thereby providing an inert gas into the process chamber. There is provided a substrate processing apparatus including a pair of inert gas supply nozzles for supplying.

According to the second aspect of the present invention,

The pair of inert gas supply nozzles are provided with the substrate processing apparatus according to the first aspect including one or more inert gas ejection ports for supplying the inert gas toward the center direction of the substrate.

According to the third aspect of the present invention,

A control unit controlling at least the process gas supply unit and the inert gas supply unit,

The said control part is provided with the board | substrate processing apparatus as described in the 1st or 2nd form which controls the said processing gas supply unit and the said inert gas supply unit so that the supply flow volume of the said inert gas may become more than the supply flow volume of the said process gas.

According to the fourth aspect of the present invention,

A heating unit for heating the atmosphere in the processing chamber;

A control unit controlling at least the heating unit

Including,

The control unit,

The substrate processing apparatus as described in the 1st aspect which controls the said heating unit so that the atmosphere in the said process chamber may be predetermined process temperature is provided.

According to the fifth aspect of the present invention,

The substrate processing apparatus as described in the 4th aspect in which the thermal decomposition temperature of the said process gas is lower than the said process temperature is provided.

According to the sixth aspect of the present invention,

A control unit for controlling at least said processing gas supply unit and said inert gas supply unit,

The control unit,

The substrate processing apparatus as described in the 4th or 5th form which controls the said processing gas supply unit and the said inert gas supply unit so that the supply flow volume of the said inert gas may become more than the supply flow volume of the said process gas is provided.

According to the seventh aspect of the present invention,

With outer tube,

An inner tube installed inside the outer tube and accommodating at least a lower end of the substrate, the substrate being stacked in multiple stages in a horizontal position;

A processing gas supply unit for supplying one or more kinds of processing gases into the inner tube;

An inert gas supply unit for supplying an inert gas into the inner tube;

An exhaust hole provided at a position opposed to the processing gas supply nozzle as the inner tube side wall,

The processing gas supply unit,

One or more process gas supply nozzles installed in the inner tube so as to extend in the stacking direction of the substrate, and one or more process gas supply nozzles having one or more process gas outlets for supplying the process gas;

The inert gas supply unit,

It extends in the lamination direction of the substrate and is provided inside the inner tube so as to sandwich the process gas supply nozzle from both sides along the circumferential direction of the substrate, and has at least one inert gas jet port for supplying the inert gas. A substrate processing apparatus including a pair of inert gas supply nozzles is provided.

According to the eighth aspect of the present invention,

The inner tube is formed with a preliminary chamber protruding outward in the radial direction,

The processing gas supply nozzle is installed in the preliminary chamber,

The processing gas jet port is provided with the substrate processing apparatus according to the seventh aspect, which is disposed radially outward from the inner circumferential surface of the inner tube.

According to the ninth aspect of the present invention,

The inner tube is formed with a preliminary chamber protruding outward in the radial direction,

The pair of inert gas supply nozzles are installed in the preliminary chamber,

The said inert gas blowing port is provided with the substrate processing apparatus as described in the 7th aspect arrange | positioned radially outward from the inner peripheral surface of the said inner tube.

According to the tenth aspect of the present invention,

The 1st straight line which connects the said process gas supply nozzle and the said exhaust hole is provided with the board | substrate processing apparatus of any one of the 7th-9th forms comprised so that it may pass around the center of the said board | substrate.

According to the eleventh aspect of the present invention,

The substrate processing apparatus according to the tenth aspect, wherein the processing gas ejection port is opened to be substantially parallel to the first straight line is provided.

According to the twelfth aspect of the present invention,

The 2nd and 3rd straight line which connects the said pair of inert gas supply nozzles and the said exhaust hole is provided with the substrate processing apparatus as described in the 10th form comprised so that the said 1st straight line may respectively be interposed from both sides.

According to a thirteenth aspect of the present invention,

The substrate processing apparatus according to the twelfth aspect, wherein the inert gas blowing port is configured to open substantially in parallel with the second and third straight lines.

According to a fourteenth aspect of the present invention,

The substrate processing apparatus according to the twelfth aspect, wherein the inert gas blowing port is configured to open in a direction that is open outward from the second and third straight lines, respectively.

According to a fifteenth aspect of the present invention,

A heating unit for heating the atmosphere in the processing chamber,

A control unit controlling at least the processing gas supply unit

Including,

The control unit,

The substrate processing apparatus as described in any one of the 7th-14th aspect which controls the said heating unit so that the atmosphere in the said process chamber may be predetermined process temperature is provided.

According to the sixteenth aspect of the present invention,

The substrate processing apparatus as described in the 15th aspect whose pyrolysis temperature of the said processing gas is lower than the said processing temperature is provided.

According to the seventeenth aspect of the present invention,

A control unit controlling at least the process gas supply unit and the inert gas supply unit,

The control unit,

The substrate processing apparatus as described in any one of the 7th-14th aspect which controls the said processing gas supply unit and the said inert gas supply unit so that the supply flow volume of the said inert gas may become more than the supply flow volume of the said process gas is provided. .

According to the eighteenth aspect of the present invention,

The control unit,

The substrate processing apparatus according to the fifteenth or sixteenth aspect of controlling the processing gas supply unit and the inert gas supply unit so that the supply flow rate of the inert gas is larger than the supply flow rate of the process gas.

According to the nineteenth aspect of the present invention,

The pair of inert gas supply nozzles are provided with the substrate processing apparatus according to the seventh aspect, each of which includes one or more inert gas jet ports that supply the inert gas toward the center direction of the substrate.

According to the twentieth aspect of the present invention,

A substrate processing apparatus for supplying a surface of a substrate by repeating a predetermined number of times alternately so as not to mix two or more kinds of processing gases, and forming a thin film on the surface of the substrate,

A processing chamber for storing and processing the substrates stacked in multiple stages in a horizontal position;

A processing gas supply unit for supplying two or more kinds of the processing gases into the processing chamber;

An inert gas supply unit for supplying an inert gas into the processing chamber;

An exhaust unit for exhausting the inside of the processing chamber

Including,

The processing gas supply unit includes two or more processing gas supply nozzles which extend in the stacking direction of the substrate so as to follow the inner wall of the processing chamber and supply the processing gas into the processing chamber.

The inert gas supply unit extends in the stacking direction of the substrate along the inner wall of the processing chamber, and at least one process gas supply nozzle of the two or more process gas supply nozzles is disposed from both sides along the circumferential direction of the substrate. It is provided so that it may be provided, and the board | substrate processing apparatus which includes a pair of inert gas supply nozzle which supplies an inert gas in the said process chamber is provided.

According to the twenty first aspect of the present invention,

The at least one process gas supply nozzle sandwiched between both sides by the pair of inert gas supply nozzles has a substrate processing apparatus according to a twentieth aspect for supplying a process gas that affects in-plane uniformity of the thin film thickness. Is provided.

According to the twenty second aspect of the present invention,

The processing gas supply unit,

A first process gas supply nozzle for supplying a first process gas that affects in-plane uniformity of the thin film thickness;

A second processing gas supply nozzle for supplying a second processing gas that does not affect the in-plane uniformity of the thickness of the thin film;

Including,

The said 1st process gas supply nozzle is provided with the board | substrate processing apparatus as described in the 20th aspect interposed between both sides by the said pair of inert gas supply nozzles along the circumferential direction of the said board | substrate.

According to a twenty third aspect of the present invention,

A processing chamber for storing and processing substrates stacked in multiple stages in a horizontal position;

At least one process gas supply nozzle extending in the stacking direction of the substrate so as to follow the inner wall of the process chamber and supplying the process gas into the process chamber;

A pair of inert gas supply nozzles which extend in the stacking direction of the substrate so as to follow an inner wall of the process chamber and supply an inert gas into the process chamber;

An exhaust line for exhausting the inside of the process chamber

And,

The pair of inert gas supply nozzles are arranged such that a flow path is limited by the gas flow of the inert gas supplied from the inert gas supply nozzle so that the gas flow of the process gas supplied from the process gas supply nozzle is limited. A substrate processing apparatus is provided.

According to a twenty fourth aspect of the present invention,

A processing chamber for storing and processing substrates stacked in multiple stages in a horizontal position;

At least one process gas supply nozzle extending in the stacking direction of the substrate so as to follow the inner wall of the process chamber and supplying the process gas into the process chamber;

A pair of inert gas supply nozzles which extend in the stacking direction of the substrate so as to follow an inner wall of the process chamber and supply an inert gas into the process chamber;

An exhaust line for exhausting the inside of the process chamber

And,

The pair of inert gas supply nozzles are provided with a substrate processing apparatus for supplying the inert gas between the inner wall of the processing chamber and the gap between the substrate.

According to a twenty fifth aspect of the present invention,

Carrying out a substrate stacked in multiple stages in a horizontal posture into a processing chamber;

The process gas is supplied into the process chamber from one or more process gas supply nozzles extending in the stacking direction of the substrate so as to follow the inner wall of the process chamber, while extending in the stacking direction of the substrate so as to follow the inner wall of the process chamber. Processing a substrate by supplying an inert gas into the processing chamber from a pair of inert gas supply nozzles provided so as to sandwich the processing gas supply nozzle from both sides along a direction;

Process of carrying out the board | substrate after a process from the said process chamber

There is provided a method of manufacturing a semiconductor device comprising a.

According to a twenty sixth aspect of the present invention,

In the process of processing the said board | substrate, it described in the 25th aspect which makes the flow volume of the said inert gas supplied from each nozzle of the said pair of inert gas supply nozzles more than the flow volume of the said process gas supplied from the said process gas supply nozzle. A method of manufacturing a semiconductor device is provided.

According to the twenty-seventh aspect of the present invention,

A method for manufacturing a semiconductor device in which two or more types of processing gases are repeatedly supplied to the substrate surface alternately in a predetermined number of times so as not to mix with each other, and a predetermined thin film is formed on the surface of the substrate.

Carrying out a substrate stacked in multiple stages in a horizontal posture into a processing chamber;

A first gas supply step of supplying a first processing gas into the processing chamber;

A first exhaust step of exhausting the atmosphere in the processing chamber;

A second gas supply step of supplying a second processing gas into the processing chamber;

2nd exhaust process which exhausts the atmosphere in the said process chamber

Including,

In at least one of the first gas supply step and the second gas supply step, a semiconductor supplying an inert gas so as to sandwich a gas flow of the first processing gas or a gas flow of the second processing gas from both sides. A method of making a device is provided.

According to a twenty eighth aspect of the present invention,

A processing chamber for receiving and processing substrates stacked in multiple stages in a horizontal position;

One or more process gas supply nozzles which extend in the stacking direction of the substrate along the inner wall of the process chamber and supply the process gas into the process chamber;

A pair of inert gas supply nozzles which extend in the stacking direction of the substrate so as to follow the inner wall of the processing chamber and are arranged to sandwich the processing gas supply nozzles from both sides along the circumferential direction of the substrate and supply an inert gas into the processing chamber; ,

An inert gas jet port provided in the inert gas supply nozzle;

An exhaust line for exhausting the inside of the process chamber

Including,

The inert gas ejection port is provided with a substrate processing apparatus which is opened to inject an inert gas into a space between the processing chamber inner wall and the substrate outer peripheral portion.

According to the 29th aspect of this invention,

The substrate processing apparatus as described in any one of the 1st-28th forms provided with a pair of rectification plate in the outer side of the said inert gas nozzle which is inside of the said processing chamber from the said inert gas jet port.

According to a thirtieth aspect of the present invention,

The substrate processing apparatus as described in the twenty-eighth aspect is provided between the said inert gas supply nozzle and the said board | substrate, and a pair of rectification plates arrange | positioned so that it may become substantially parallel to the said inert gas jet port direction.

According to a thirty first aspect of the present invention,

The said rectifying plate is provided with the substrate processing apparatus as described in the 29th or 30th aspect attached to the said inert gas supply nozzle.

According to a thirty second aspect of the present invention,

The said rectifying plate is provided with the substrate processing apparatus as described in the 29th or 30th form attached to the inner wall of the said process chamber.

1 is a vertical sectional view of a processing furnace of a substrate processing apparatus according to a first embodiment of the present invention.

2 is a horizontal sectional view of a processing furnace of the substrate processing apparatus according to the first embodiment of the present invention.

3 is a schematic view showing a flow of a processing gas and an inert gas in a processing furnace.

4 is a schematic configuration diagram of a substrate holding tool provided with a ring-shaped rectifying plate;

5 is a schematic configuration diagram of a substrate holding tool not including a rectifying plate.

6 is a schematic configuration diagram of a substrate processing apparatus according to a first embodiment of the present invention.

7 is a diagram showing a substrate processing result according to a comparative example.

8 is a diagram showing a substrate processing result according to an embodiment of the present invention.

9 is a horizontal sectional view of a processing furnace of a substrate processing apparatus according to a second embodiment of the present invention.

10 is a horizontal sectional view of a processing furnace of a substrate processing apparatus according to a third embodiment of the present invention.

11 is a horizontal sectional view of a processing furnace of a substrate processing apparatus according to a fourth embodiment of the present invention.

12 is a horizontal sectional view of a processing furnace of a substrate processing apparatus according to a fifth embodiment of the present invention.

<Description of Drawing Major Symbols>

2: inner tube 3: outer tube

4: process chamber 7a: exhaust pipe (exhaust line)

10 wafer (substrate) 11 boat (substrate holding member)

20: heater unit 22a: process gas supply nozzle

22b: process gas supply nozzle 22c: inert gas supply nozzle

22d: inert gas supply nozzle 24a: process gas outlet

24b: process gas outlet 24c: inert gas outlet

24d: inert gas outlet 25: exhaust hole

101: substrate processing apparatus 202: processing furnace

240: controller (control unit)

Claims (20)

delete A processing chamber for storing and processing substrates stacked in multiple stages in a horizontal position; A processing gas supply unit supplying one or more kinds of processing gases into the processing chamber; An inert gas supply unit for supplying an inert gas into the processing chamber; An exhaust unit for exhausting the inside of the processing chamber, A control unit for controlling at least the processing gas supply unit and the inert gas supply unit, The processing gas supply unit includes one or more processing gas supply nozzles which extend in the stacking direction of the substrate so as to follow the inner wall of the processing chamber and supply the processing gas into the processing chamber. The inert gas supply unit extends in the stacking direction of the substrate so as to follow the inner wall of the process chamber, and is provided so as to sandwich the process gas supply nozzles from both sides along the circumferential direction of the substrate, thereby providing an inert gas into the process chamber. A pair of inert gas supply nozzles for supplying, The control unit controls the processing gas supply unit and the inert gas supply unit so that the supply flow rate of the inert gas is greater than the supply flow rate of the process gas. A processing chamber for storing and processing substrates stacked in multiple stages in a horizontal position; A processing gas supply unit supplying one or more kinds of processing gases into the processing chamber; An inert gas supply unit for supplying an inert gas into the processing chamber; An exhaust unit for exhausting the inside of the processing chamber, A heating unit for heating the atmosphere in the processing chamber; A control unit controlling at least the heating unit Including, The processing gas supply unit includes one or more processing gas supply nozzles which extend in the stacking direction of the substrate so as to follow the inner wall of the processing chamber and supply the processing gas into the processing chamber, The inert gas supply unit extends in the stacking direction of the substrate so as to follow the inner wall of the process chamber, and is provided so as to sandwich the process gas supply nozzles from both sides along the circumferential direction of the substrate, thereby providing an inert gas into the process chamber. A pair of inert gas supply nozzles for supplying, And the control unit controls the heating unit so that the atmosphere in the processing chamber becomes a predetermined processing temperature. The substrate processing apparatus of claim 3, wherein a thermal decomposition temperature of the processing gas is lower than the processing temperature. The method according to claim 4, wherein the control unit controls at least the processing gas supply unit, the inert gas supply unit, The control unit, And controlling the processing gas supply unit and the inert gas supply unit so that the supply flow rate of the inert gas is greater than the supply flow rate of the process gas. A processing chamber for storing and processing substrates stacked in multiple stages in a horizontal position; A processing gas supply unit supplying one or more kinds of processing gases into the processing chamber; An inert gas supply unit for supplying an inert gas into the processing chamber; An exhaust unit for exhausting the inside of the processing chamber And, The processing gas supply unit includes one or more processing gas supply nozzles which extend in the stacking direction of the substrate so as to follow the inner wall of the processing chamber and supply the processing gas into the processing chamber, The inert gas supply unit extends in the stacking direction of the substrate so as to follow the inner wall of the process chamber, and is provided so as to sandwich the process gas supply nozzles from both sides along the circumferential direction of the substrate, thereby providing an inert gas into the process chamber. A pair of inert gas supply nozzles for supplying, A pair of rectifying plates provided on the outer side of the inert gas nozzle which is an inner side of the processing chamber from the inert gas jet port; Substrate processing apparatus. A processing chamber for storing and processing substrates stacked in multiple stages in a horizontal position; A processing gas supply unit supplying one or more kinds of processing gases into the processing chamber; An inert gas supply unit for supplying an inert gas into the processing chamber; An exhaust unit for exhausting the inside of the processing chamber And, The processing gas supply unit includes one or more processing gas supply nozzles which extend in the stacking direction of the substrate so as to follow the inner wall of the processing chamber and supply the processing gas into the processing chamber. The inert gas supply unit extends in the stacking direction of the substrate so as to follow the inner wall of the process chamber, and is provided so as to sandwich the process gas supply nozzles from both sides along the circumferential direction of the substrate, thereby providing an inert gas into the process chamber. A pair of inert gas supply nozzles for supplying, And a pair of rectifying plates extending in the vertical direction between the inert gas supply nozzle and the substrate and arranged to be substantially parallel to the direction of the inert gas jet port. An outer tube, An inner tube installed inside the outer tube, the inner tube receiving at least a lower end of the substrate stacked in multiple stages in a horizontal position; A processing gas supply unit for supplying one or more kinds of processing gases into the inner tube; An inert gas supply unit for supplying an inert gas into the inner tube; An exhaust hole provided at a position opposite the process gas supply nozzle as a side wall of the inner tube; And, The processing gas supply unit, At least one processing gas supply nozzle which is placed inside the inner tube so as to extend in the stacking direction of the substrate, and has at least one processing gas outlet for supplying the processing gas; The inert gas supply unit, At least one inert gas ejection port which is installed inside the inner tube so as to extend in the lamination direction of the substrate and sandwich the processing gas supply nozzle from both sides along the circumferential direction of the substrate, and supply the inert gas; A substrate processing apparatus comprising a pair of inert gas supply nozzles provided. According to claim 8, wherein the inner tube is formed with a pre-chamber protruding outward in the radial direction, The processing gas supply nozzle is installed in the preliminary chamber, The said processing gas blowing port is arrange | positioned radially outward from the inner peripheral surface of the said inner tube. The substrate processing apparatus of Claim 8 in which the 1st straight line which connects the said process gas supply nozzle and the said exhaust hole is comprised so that it may pass around the center of the said board | substrate. The substrate processing apparatus of claim 10, wherein the processing gas jet port is configured to open substantially in parallel with the first straight line. The substrate processing apparatus according to claim 10, wherein the second and third straight lines connecting the pair of inert gas supply nozzles and the exhaust hole are configured to sandwich the first straight line from both sides, respectively. The substrate processing apparatus according to claim 12, wherein the inert gas jet port is configured to open substantially parallel to the second and third straight lines. 13. The substrate processing apparatus of claim 12, wherein the inert gas ejection port is configured to open in an open direction toward the outside than the second and third straight lines, respectively. The heating unit according to claim 8, further comprising: a heating unit for heating the atmosphere in the processing chamber; A control unit controlling at least the processing gas supply unit Including, The control unit, And the heating unit is controlled so that the atmosphere in the processing chamber becomes a predetermined processing temperature. The substrate processing apparatus of Claim 15 whose pyrolysis temperature of the said processing gas is lower than the said processing temperature. The apparatus of claim 8, further comprising a control unit controlling at least the process gas supply unit and the inert gas supply unit. The control unit, And controlling the processing gas supply unit and the inert gas supply unit so that the supply flow rate of the inert gas is greater than the supply flow rate of the process gas. The method of claim 16, The control unit, And controlling the processing gas supply unit and the inert gas supply unit so that the supply flow rate of the inert gas is greater than the supply flow rate of the process gas. delete Carrying in a substrate stacked in multiple stages in a horizontal posture into a processing chamber; The process gas is supplied into the process chamber from one or more process gas supply nozzles extending in the stacking direction of the substrate so as to follow the inner wall of the process chamber. Processing a substrate by supplying an inert gas into the processing chamber from a pair of inert gas supply nozzles provided so as to sandwich the processing gas supply nozzles from both sides along a direction; Process of carrying out the board | substrate after a process from the said process chamber &Lt; / RTI &gt; In the step of processing the substrate, a method of manufacturing a semiconductor device wherein a flow rate of the inert gas supplied from each nozzle of the pair of inert gas supply nozzles is equal to or more than a flow rate of the processing gas supplied from the processing gas supply nozzle.

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