KR101024194B1 - 막 형성 프로세스들에서 반응성 식각 및 성장 종의 인-시튜생성 방법 - Google Patents

막 형성 프로세스들에서 반응성 식각 및 성장 종의 인-시튜생성 방법 Download PDF

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KR101024194B1
KR101024194B1 KR1020087020262A KR20087020262A KR101024194B1 KR 101024194 B1 KR101024194 B1 KR 101024194B1 KR 1020087020262 A KR1020087020262 A KR 1020087020262A KR 20087020262 A KR20087020262 A KR 20087020262A KR 101024194 B1 KR101024194 B1 KR 101024194B1
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reaction
wafer
film
etching
hydrogen
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KR20090012206A (ko
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사디쉬 쿠퍼라오
데이비드 케이. 칼슨
하워드 벡포드
에롤 산체스
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어플라이드 머티어리얼스, 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3408—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020087020262A 2006-01-20 2007-01-09 막 형성 프로세스들에서 반응성 식각 및 성장 종의 인-시튜생성 방법 Expired - Fee Related KR101024194B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/336,178 US7709391B2 (en) 2006-01-20 2006-01-20 Methods for in-situ generation of reactive etch and growth specie in film formation processes
US11/336,178 2006-01-20

Related Child Applications (1)

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KR1020117000355A Division KR101237868B1 (ko) 2006-01-20 2007-01-09 막 형성 프로세스들에서 반응성 식각 및 성장 종의 인-시튜 생성 방법

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KR20090012206A KR20090012206A (ko) 2009-02-02
KR101024194B1 true KR101024194B1 (ko) 2011-03-22

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KR1020087020262A Expired - Fee Related KR101024194B1 (ko) 2006-01-20 2007-01-09 막 형성 프로세스들에서 반응성 식각 및 성장 종의 인-시튜생성 방법
KR1020117000355A Expired - Fee Related KR101237868B1 (ko) 2006-01-20 2007-01-09 막 형성 프로세스들에서 반응성 식각 및 성장 종의 인-시튜 생성 방법

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Country Link
US (1) US7709391B2 (https=)
JP (1) JP5420397B2 (https=)
KR (2) KR101024194B1 (https=)
TW (1) TWI379346B (https=)
WO (1) WO2008127220A2 (https=)

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US7976634B2 (en) * 2006-11-21 2011-07-12 Applied Materials, Inc. Independent radiant gas preheating for precursor disassociation control and gas reaction kinetics in low temperature CVD systems
US7935419B1 (en) * 2008-02-07 2011-05-03 Los Alamos National Security, Llc Thick-shell nanocrystal quantum dots
KR101064873B1 (ko) * 2009-10-23 2011-09-16 주성엔지니어링(주) 기판 처리 장치 및 방법
CN103228827B (zh) 2010-11-17 2015-01-21 新日铁住金株式会社 外延碳化硅单晶基板的制造方法
WO2012128783A1 (en) * 2011-03-22 2012-09-27 Applied Materials, Inc. Liner assembly for chemical vapor deposition chamber
US9499905B2 (en) * 2011-07-22 2016-11-22 Applied Materials, Inc. Methods and apparatus for the deposition of materials on a substrate
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US20140116336A1 (en) * 2012-10-26 2014-05-01 Applied Materials, Inc. Substrate process chamber exhaust
US11414759B2 (en) 2013-11-29 2022-08-16 Taiwan Semiconductor Manufacturing Co., Ltd Mechanisms for supplying process gas into wafer process apparatus
KR102150728B1 (ko) * 2013-12-16 2020-09-01 에스케이실트론 주식회사 공정 챔버의 세정 장치 및 세정 방법
KR102705337B1 (ko) 2015-12-04 2024-09-11 어플라이드 머티어리얼스, 인코포레이티드 InGaAs(또는 Ⅲ-Ⅴ) 기판들을 세정하기 위한 방법들 및 해법들
KR102408720B1 (ko) 2017-06-07 2022-06-14 삼성전자주식회사 상부 돔을 포함하는 반도체 공정 챔버
JP6971823B2 (ja) * 2017-12-13 2021-11-24 東京エレクトロン株式会社 シリコン含有膜のエッチング方法、コンピュータ記憶媒体、及びシリコン含有膜のエッチング装置
CN214848503U (zh) 2018-08-29 2021-11-23 应用材料公司 注入器设备、基板处理设备及在机器可读介质中实现的结构
US11257671B2 (en) * 2018-09-28 2022-02-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system of control of epitaxial growth
FI128855B (en) * 2019-09-24 2021-01-29 Picosun Oy FLUID DISTRIBUTOR FOR THIN FILM GROWING EQUIPMENT, RELATED EQUIPMENT AND METHODS
TWI749521B (zh) * 2020-04-13 2021-12-11 大陸商蘇州雨竹機電有限公司 具串聯式冷卻室之多流道氣體噴射器
TW202223136A (zh) * 2020-10-28 2022-06-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於在基板上形成層之方法、及半導體處理系統
US20220290293A1 (en) * 2021-03-15 2022-09-15 HelioSource Tech, LLC Hardware and processes for in operando deposition shield replacement/surface cleaning
CN119889750B (zh) * 2025-01-13 2025-11-28 西北工业大学 一种棱柱型triso颗粒弥散增材燃料元件及其制备方法和应用

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Publication number Publication date
KR101237868B1 (ko) 2013-03-04
TW200729304A (en) 2007-08-01
KR20110023880A (ko) 2011-03-08
KR20090012206A (ko) 2009-02-02
WO2008127220A3 (en) 2009-04-16
WO2008127220A2 (en) 2008-10-23
JP2009531872A (ja) 2009-09-03
TWI379346B (en) 2012-12-11
JP5420397B2 (ja) 2014-02-19
US20070170148A1 (en) 2007-07-26
US7709391B2 (en) 2010-05-04

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