KR100994489B1 - Apparatus for plasma processong, apparatus for processing of substrate - Google Patents

Abstract

The present invention relates to a plasma processing apparatus and a substrate processing apparatus. The plasma processing apparatus according to the present invention includes: a chamber providing a processing space of a substrate; a stage provided in the processing space and supporting the substrate for processing the substrate; A stage supporter for elevating the stage from within the processing space; and a substrate supporter having one side fixed to the chamber, and the other side penetrating through the stage, the support pin protruding from the stage according to the elevation of the stage; By providing a configuration, the configuration of the equipment can be simplified by omitting the configuration of the driving device for driving the plurality of support pins.

Description

Plasma Processing Equipment, Substrate Processing Equipment {APPARATUS FOR PLASMA PROCESSONG, APPARATUS FOR PROCESSING OF SUBSTRATE}

The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus having a fixed position with respect to a changed position of a chamber to be elevated, and having a substrate support for detaching the substrate from the chamber.

Recently, with the development of the information society, the interest in information and communication devices is increasing, and the demand for display devices essential for the information and communication devices is also diversified. Accordingly, various display devices such as liquid crystal displays (LCDs) and plasma display panels (PDPs) are being developed. The user of such a display device is required to increase the size of the display device as well as the size of the display device. Therefore, in recent years, a large LCD of 50 inches or more has been developed and commercialized.

An LCD is a display device that displays information on a screen by using anisotropy of refractive indices of liquid crystals. LCDs are produced by adding and bonding liquid crystals between two substrates. One of the two substrates is a drive element array substrate, and the other is a color filter substrate. Driving element Array A plurality of pixels are formed on the substrate, and a driving element such as a thin film transistor is formed in each pixel. A color filter layer is formed on the color filter substrate, and an alignment layer for orienting the pixel electrode, the common electrode, and the liquid crystal molecules is coated.

Equipment employed in the manufacturing process of such a display device includes a plasma processing apparatus used in an etching process and an application process for forming a driving element on a substrate, and a substrate bonding apparatus for bonding two substrates together.

A typical plasma processing apparatus maintains a processing space in a high vacuum state, and upper and lower electrodes are disposed therein. The two electrodes are divided into an electrode to which RF power is applied and an electrode to ground, and the upper electrode is provided with a gas supply means for supplying a process gas therein to supply process gas into the plasma processing apparatus. The lower electrode is provided with a plurality of lift pins for mounting the substrate loaded into the plasma processing apparatus on the upper surface of the lower electrode.

On the other hand, the general substrate processing apparatus forms a processing space of the substrate by the upper chamber and the lower chamber, the processing space is provided to maintain a vacuum state. The substrate for processing is carried into the processing space and supported by the lower chamber. At this time, the substrate seats the substrate loaded in the lower chamber by the lift pin provided in the lower chamber.

In this way, a plurality of lift pins used in the plasma processing apparatus and the substrate processing apparatus are provided in a plurality so that the substrate is horizontal and can support the entire area of the substrate uniformly. In addition, the lift pins are provided together with the driving device so that the lift pins can rise and fall through the through-holes formed in the lower electrode or the lower chamber. Therefore, in order to keep the processing space in a vacuum state, it is inevitable to use an airtight member such as bellows that can seal between the through hole and the lift pin.

In the conventional plasma processing apparatus and substrate processing apparatus, the number of necessary lift pins increases with the recent increase in size of a substrate, and thus, a large number of expensive hermetic members must be used, and the burden on the driving device for driving the lift pins also increases. .

In addition, it is difficult to drive a plurality of lift pins at the same time, and to adjust the fine height of the support pin.

Accordingly, it is an object of the present invention to provide a plasma processing apparatus and a substrate processing apparatus for separating a substrate from a lower electrode or a lower chamber without a separate driving device according to the lower electrode or the lower chamber.

According to a first aspect of the present invention, there is provided a plasma processing apparatus, comprising: a chamber providing a processing space of a substrate; a stage provided in the processing space and supporting the substrate for processing the substrate; lifting and lowering the stage in the processing space And a substrate support part having one side fixed to the chamber, the other side penetrating the stage, and having a support pin protruding from the stage.

The substrate support portion may be inserted into the stage coaxially with the support pin, and may further include a bushing to prevent abrasion of the stage and the support pin due to the elevation of the stage.

The bushing may include a guide hole in contact with an outer circumferential surface of the support pin, and the guide hole may guide the lifting and lowering of the stage along the support pin.

The bushing is provided with an inner space spaced apart from the support pin, the support pin is formed with a support projection protruding at a point located in the inner space, the substrate support portion the inner wall of the bushing toward the stage and the support jaw It may further include an elastic member for elastically supporting.

On the other hand, the plasma processing apparatus according to the second embodiment of the present invention includes a first chamber; a second chamber for providing a processing space of the substrate together with the first chamber; the chamber lifting to lift the second chamber to the first chamber side And a substrate support having one side fixed to the outside of the processing space and a supporting pin protruding into the processing space while the other side passes through the second chamber as the second chamber moves up and down.

The substrate support portion may be inserted into the second chamber coaxially with the support pin and further include a bushing for preventing abrasion of the second chamber and the support pin due to the elevation of the second chamber. Can be.

The bushing may include a guide hole in contact with an outer circumferential surface of the support pin, and the guide hole may guide the lifting and lowering of the second chamber along the support pin.

The bushing is provided with an inner space spaced apart from the support pin, the support pin is formed in the support jaw protruding at a point located in the inner space, the substrate support portion and the inner wall of the bushing toward the second chamber and the It may further include an elastic member for elastically supporting the support jaw.

The plasma processing apparatus according to the third embodiment of the present invention may include a first chamber; a second chamber providing a processing space of a substrate together with the first chamber; at least one of the first chamber and the second chamber. A chamber elevating unit for elevating; a stage provided in the processing space to support the substrate for processing the substrate; a stage elevating unit for elevating the stage in the processing space; and one side of which is fixed to the second chamber; And a substrate support part having a support pin protruding from the stage while the other side passes through the stage as the stage moves up and down.

The substrate support portion may be inserted into the stage coaxially with the support pin, and may further include a bushing to prevent abrasion of the stage and the support pin due to the elevation of the stage.

The bushing may include a guide hole in contact with an outer circumferential surface of the support pin, and the guide hole may guide the lifting and lowering of the stage along the support pin.

 The bushing is provided with an inner space spaced apart from the support pin, the support pin is formed in the support jaw protruding at a point located in the inner space, the substrate support is the inner wall of the bushing and the support toward the stage It may further include an elastic member for elastically supporting the jaw.

On the other hand, the substrate processing apparatus according to the first embodiment of the present invention provides a processing space of the substrate, the chamber having a door through which the substrate is entered; provided in the processing space, to support the substrate for processing of the substrate A stage elevating unit for elevating the stage from within the processing space; and one side is fixed to the lower portion of the chamber, and the other side protrudes from the stage to support the substrate spaced apart from the stage as the stage is lowered. And, as the stage is raised, the other side is provided with a support pin for mounting the substrate on the stage to the other side into the stage.

The substrate support portion may be inserted into the stage coaxially with the support pin, and may further include a bushing to prevent abrasion of the stage and the support pin due to the elevation of the stage.

The bushing may include a guide hole in contact with an outer circumferential surface of the support pin, and the guide hole may guide the lifting and lowering of the stage along the support pin.

The bushing is provided with an inner space spaced apart from the support pin, the support pin is formed with a support jaw protruding at a point located in the inner space, the substrate support portion the inner wall of the bushing toward the stage and the support jaw It may further include an elastic member for elastically supporting.

On the other hand, a substrate processing apparatus according to a second embodiment of the present invention includes an upper chamber; a lower chamber providing a processing space of a substrate together with the upper chamber; raising the lower chamber to seal the processing space, the lower chamber A chamber lifting part configured to descend to open the processing space; and one side is fixed to the outside of the processing space, and the other side protrudes from the lower chamber to support the substrate from the lower chamber according to the opening of the processing space. And a substrate support part having a support pin for receiving the other side into the lower chamber and seating the substrate on the lower chamber according to the sealing of the processing space.

The substrate support portion may be inserted into the second chamber coaxially with the support pin and further include a bushing for preventing abrasion of the second chamber and the support pin due to the elevation of the second chamber. Can be.

The bushing may include a guide hole in contact with an outer circumferential surface of the support pin, and the guide hole may guide the lifting and lowering of the second chamber along the support pin.

The bushing is provided with an inner space spaced apart from the support pin, the support pin is formed in the support jaw protruding at a point located in the inner space, the substrate support portion and the inner wall of the bushing toward the second chamber and the It may further include an elastic member for elastically supporting the support jaw.

Plasma processing apparatus and substrate processing apparatus according to the present invention comprises a substrate support having a fixed position with respect to the position of the lower electrode or the lower chamber that is changed in accordance with the lifting, thereby forming a drive device for driving a plurality of support pins By omitting, the configuration of the equipment can be simplified.

In addition, by supporting the substrate with a support, it is possible to eliminate the difficulty of adjusting the individual height of the plurality of support pins, and to reduce the number of the plurality of support pins penetrating the stage, to maintain the airtightness of the processing space The cost of equipment can be reduced by reducing the number of airtight members such as expensive bellows.

Hereinafter, a plasma processing apparatus according to a first embodiment of the present invention will be described in detail with reference to the accompanying drawings.

1 is a cross-sectional view schematically showing a plasma processing apparatus according to a first embodiment of the present invention. Referring to FIG. 1, the plasma processing apparatus 100 includes a chamber 110, a stage 130, a stage lifter 140, and a substrate supporter 150.

The chamber 110 is integrally provided to provide the processing space 101 of the substrate S, and the door 111 is provided at one side wall to allow the substrate S to enter and exit.

The stage 130 is a lower electrode and is disposed below the processing space 101 to support the substrate S for processing the substrate S. At this time, the upper electrode 120 is disposed above the processing space 101, the upper electrode 120 is provided with a gas supply means (not shown) for supplying a process gas therein, the processing space 101 To supply process gas.

The upper end of the stage 130 may be provided with a substrate chuck for stable support of the substrate. The substrate chuck 131 may be one of a vacuum chuck attaching the substrate S by a vacuum suction force and an electrostatic chuck (ESC) attaching the substrate S by an electrostatic force.

The stage 130 is supported by the stage lifter 140 and is provided to be lifted by the stage lifter 140.

The stage lifting unit 140 may include a lifting shaft 141 that supports and lifts the stage 130, and a lifting motor 143 that provides power to the lifting shaft 141. Here, as shown in Figure 1, the lifting shaft 141 may be adopted as a hydraulic cylinder, and thus the lifting motor 143 may be adopted as a hydraulic pump motor. Although not shown, in another embodiment, the stage elevating unit 140 is adopted as an elevating screw in which the elevating shaft 141 rotates while supporting the stage 130, and thus the elevating motor 143 is a DC motor having a speed reducer. (DC moter), low pressure motor (AC-moter) can be adopted. When the lifting motor 143 is adopted as a low pressure motor, it is preferable to be adopted together with the motor encoder.

Meanwhile, the substrate support part 150 guides the substrate S, which is carried into the processing space 101, to the stage 130 and guides the substrate S seated on the stage 130 to discharge the substrate S. It is provided for spaced apart from the stage 130.

FIG. 2 is an enlarged perspective view showing part “I” shown in FIG. 1, and FIG. 3 is a partial cross-sectional perspective view illustrating a coupling relationship of a substrate supporter of the plasma processing apparatus according to the first embodiment of the present invention.

2 to 3, the substrate supporter 150 includes a support pin 151 and a support 153. The support pin 151 is provided to penetrate the stage 130 in the lifting direction of the stage 130. Accordingly, the through hole 133 through which the support pin 151 passes is formed in the stage 130 and the substrate chuck 131.

One end of the support pin 151 penetrating the stage 130 is coupled to the bottom surface of the chamber 110, and the other end thereof is coupled to the support 153. The support pins 151 may be provided in plural so as to maintain the horizontality of the substrate S and to support the substrate S.

The support 153 may be provided in the form of a bar connecting the other ends of the support pins 151 to each other. The support 153 is lifted in accordance with the lift of the support pin 151 and contacts the substrate S to support the substrate S. The stage 130 is provided with a recess 153a into which the support 153 is inserted so as not to interfere with the mounting of the substrate S when the substrate S is mounted on the stage 130.

The support 153 allows the plurality of support pins 151 to have an alignment position according to each through hole 133, and the heights of the plurality of support pins 151 are aligned to support the substrate S flat. Do it.

As such, the stage 130 is changed in position by the stage lifter 140, while the support pin 151 and the support 153 are fixed by the support pin 151 in the chamber 110. Does not change.

On the other hand, the through hole 133 of the stage 130 is provided with a bushing (bushing;). The bushing 155 is coaxial with the support pin 151 and is installed by being inserted into the through hole 133 of the stage 130. The bushing 155 has an inner wall spaced apart from the support pin 151 to provide an inner space, and guide holes 155a are formed at the upper and lower ends thereof in contact with the outer circumferential surface of the support pin 151.

The bushing 155 and the support pin 151 may guide the lifting of the stage 130 by allowing the inner circumferential surface of the guide hole 155a to rise and fall in contact with the outer circumferential surface of the support pin 151 when the stage 130 is elevated. have. That is, the bushing 155 and the support pin 151 allow the stage 130 to be elevated along the axial direction of the support pin 151.

In addition, during the lifting of the stage 130, the bushing 155 prevents damage to the equipment by friction between the support pin 151 and the through hole 133, which may be generated by the vibration of the equipment. Accordingly, the bushing 155 may extend the life of the stage 130 and the support pin 151, and may provide convenience of equipment management.

The bushing 155 may provide flexibility and elasticity with the support pins 151 when organic coupling with the stage 130 and vibration of the equipment due to the lifting and lowering of the stage 130 may occur, and absorb vibration and shock. It is preferable to be made of a material such as polyurethane.

An elastic member 157 may be provided in an inner space of the bushing 155, and a support jaw 151a may be formed in a section of the support pin 151 positioned in the inner space of the bushing 155. The support jaw 151a compresses the elastic member 157 as the stage 130 rises, so that the elastic member 157 exerts an extension force in the upward direction of the stage 130.

When the elastic member 157 rises of the stage 130 for seating the substrate S, an extension force is exerted in the upward direction of the stage 130 to increase the stage lifting portion 140 that raises the stage 130. Reinforce.

In addition, the elastic member 157 supports the height of the raised stage 130 by the stretching force acting in the upward direction of the stage 130, and when the stage 130 descends, the stage 130 rapidly falls. To prevent damage to the equipment.

Hereinafter, the operation of the substrate processing apparatus according to the embodiment of the present invention will be described in detail with reference to the accompanying drawings.

4, 5, and 6 are enlarged cross-sectional views showing an operating state by enlarging a part of the plasma processing apparatus according to the first embodiment of the present invention.

Referring to FIG. 4, the door 111 is opened to process the substrate S, and the substrate S is carried into the processing space 101. In this case, the stage 130 is located at the atmospheric height h1, and the support 153 protrudes from the stage 130 and is located in the processing space 101. In addition, the elastic member 157 is compressed to maintain a state in which the stretching force acts in the upward direction of the stage 130.

Referring to FIG. 5, the substrate S carried into the processing space 101 is supported by the support 153. When the substrate S is supported by the support 153, the stage 130 is lifted by the stage lifter 140. When the stage 130 is raised, the bushing 155 and the support pin 151 guide the rise of the stage 130 by contacting the outer circumferential surface of the support pin 151 with the guide hole 155a.

As the stage 130 is lifted up, the substrate S supported by the support 153 is attached to the substrate chuck 131 of the stage 130 and moves upward from the support 153 in the upward direction of the stage 130. Spaced apart. At this time, the support 153 spaced apart from the stage 130 is embedded in the recess 153, the substrate (S) is mounted on the stage 130.

On the other hand, as the stage 130 is raised, the elastic member 157 that exerts the stretching force in the upward direction of the stage 130 is extended in the upward direction of the stage 130. Accordingly, the elastic member 157 reinforces the lifting force of the stage lifting unit 140, thereby smoothly lifting the stage 130.

When the stage 130 is raised to reach the rising height h2, the elastic member 157 together with the lifting shaft 141 supports the rising height h2 of the raised stage 130.

As described above, when the substrate S is seated on the stage 130, the process is applied to the substrate S. That is, a process gas is provided to the processing space 101, and the surface of the substrate S may be etched by the process gas or a predetermined material may be applied.

 When the processing of the substrate S is finished, the substrate support part 150 separates the substrate S from the stage 130 to discharge the substrate S. FIG.

Referring to FIG. 6, the stage 130 is lowered by the stage lifter 140. When the stage 130 descends, the bushing 155 and the support pin 151 contact the outer circumferential surface of the support pin 151 to guide the lowering of the stage 130. As the stage 130 descends, the support 153 protruding from the recess 153a contacts the substrate S and spaces the substrate S away from the substrate chuck 131.

At this time, the elastic member 157 extended in the upward direction of the stage 130 is compressed by the bushing 155 descending together with the stage 130, and prevents the stage 130 from rapidly descending.

When the stage 130 is lowered and positioned at the atmospheric height h1, the door 111 is opened, and the substrate S is carried out of the processing space.

Here, in the above description, the chamber 110 is integrally provided, and the stage 130 is provided in the processing space 101, and the stage 130 is used as a lower electrode, and an upper electrode (on the upper portion of the stage 130). Although described as having a 120, in another embodiment the chamber 110 can be separated up and down, it can be modified to use as the upper electrode and the lower electrode.

Hereinafter, a plasma processing apparatus according to a second embodiment of the present invention will be described with reference to the accompanying drawings.

7 is a cross-sectional view schematically illustrating a plasma processing apparatus according to a second embodiment of the present invention, and FIG. 8 is a partial cross-sectional perspective view illustrating a coupling relationship of a substrate support of the plasma processing apparatus according to the second embodiment of the present invention.

7 to 8, the plasma processing apparatus 200 includes a first chamber 210a, a second chamber 210b, a chamber lifter 240, and a substrate supporter 250. The first chamber 210a may be an upper chamber, and the second chamber 210b may be a lower chamber. The first chamber 210a may include an upper electrode 220 therein, and the second chamber 210b may include a stage 230. In this case, the stage 230 is a lower electrode, and is spaced apart from the second chamber 210b in order to prevent the current flowing into the stage 230 from being applied to the second chamber 210b.

In addition, an airtight member such as an O-ring for maintaining the airtightness of the processing space 201 when the processing space 201 is closed between the first chamber 210a and the second chamber 210b. 203 is provided.

The first chamber 210a is coupled to an outer frame (not shown) forming the exterior of the plasma processing apparatus 200. The second chamber 210b is supported by the chamber lifting unit 240, and is provided to be elevated to the first chamber 210a by the chamber lifting unit 240. Accordingly, the second chamber 210b and the stage 230 are lifted together.

Here, the chamber lifter 240 and the substrate supporter 250 may be similar in structure and operation to the stage lifter 140 and the substrate supporter 150 described above. Therefore, hereinafter, detailed descriptions of the chamber lifter 240 and the substrate supporter 250 will be omitted, and the chamber lifter 240 and the substrate supporter 250 may include the stage lifter 140 and the above-described stage lifter 140. Will be understood with reference to the detailed description of the substrate support 150.

However, in the substrate support part 250 of the plasma processing apparatus 200 according to the second embodiment of the present invention, since the other side of the support pin 251 is located outside the processing space 201, the support pin 251 is fixed. The fixing plate 259 and the support pin 251 may be further provided with a bellows 258 for maintaining the airtightness of the processing space 201 as the support pin 251 passes through the second chamber 210b.

Hereinafter, the operation of the substrate processing apparatus according to the embodiment of the present invention will be described in detail with reference to the accompanying drawings.

9, 10, and 11 are enlarged cross-sectional views showing an operating state by enlarging a part of the plasma processing apparatus according to the embodiment of the present invention.

Referring to FIG. 9, in a standby state, the first chamber 210a and the second chamber 210b are spaced apart from each other, so that the processing space 201 is opened, and the second chamber 210b is located at an atmospheric height h1 '. Located.

At this time, the support 253 is spaced apart from the second chamber 210b toward the first chamber 210a and positioned in the processing space 201. In addition, the elastic member 257 is compressed to maintain a state in which the stretching force acts in the upward direction of the second chamber 210b. In addition, the bellows 258 maintains the compressed state in the downward direction of the second chamber 210b.

Referring to FIG. 10, the substrate S is carried into the processing space 201 and supported by the support 253. When the substrate S is supported by the support 253, the second chamber 210b is lifted toward the first chamber 210a by the chamber lifter 240. The guide hole 255a of the bushing 255 is in contact with the outer circumferential surface of the support pin 251 to guide the rise of the second chamber 210b.

As the second chamber 210b is raised, the substrate S supported by the support 253 is attached to the substrate chuck 231 of the second chamber 210b, and the second chamber 210 is supported from the support 253. Spaced in a rising direction of 210b). At this time, the support 253 spaced apart from the second chamber 210b is embedded in the recess 253a, and the substrate S is seated in the second chamber 210b.

Meanwhile, as the second chamber 210b is raised, the elastic member 257 exerting an extension force in the upward direction of the second chamber 210b is extended in the upward direction of the second chamber 210b. Accordingly, the elastic member 257 reinforces the lifting force of the chamber lifting unit 240 to smoothly lift the second chamber 210b. At this time, the bellows 258 extends in the upward direction of the second chamber 210b.

When the second chamber 210b is raised to reach the rising height h2 'at which the processing space 201 is sealed, the airtight member 203 is in contact with the first chamber 210a, and the processing space 201 is sealed. do. The hermetic member 203 together with the bellows 258 maintains the airtightness of the processing space 201. At this time, the elastic member 257 supports the rising height h2 'of the second chamber 210b that is raised.

In this way, when the substrate S is seated in the second chamber 210b, the process is applied to the substrate S. FIG. After the processing of the substrate S, the substrate support 250 separates the substrate S from the second chamber 210b for discharging the substrate S.

Referring to FIG. 11, the second chamber 210b is lowered to the fixing plate 259 by the chamber lifting unit 240. The guide hole 255a of the bushing 255 contacts the outer circumferential surface of the support pin 251 to guide the lowering of the second chamber 210b. As the second chamber 210b is lowered, the support 253 protruding from the recess 253a contacts the substrate S, and spaces the substrate S away from the substrate chuck 231.

At this time, the elastic member 257 extending in the upward direction of the second chamber 210b is compressed by the bushing 255 lowered together with the second chamber 210b, and prevents the rapid descending of the second chamber 210b. do. In addition, the bellows 258 is compressed in the downward direction of the second chamber 210b. When the second chamber 210b is lowered and positioned at the atmospheric height h1 ′, the substrate S is carried out of the processing space 201.

In the above, the plasma processing apparatuses 100 and 200 have described that the substrate S is supported under the processing spaces 101 and 201. However, this is only specific embodiments for implementing the technical idea of the present invention, it is not limited to the position where the substrate (S) is supported. Therefore, in the above-described embodiments, the stages 130 and 230 may be disposed above the processing spaces 100 and 201, and the arrangement of the first chamber 210a and the second chamber 210b may be replaced with each other. Configurations and operations for implementing the technical idea of the present invention can be seen to be similar to each other.

However, when the stages 130 and 230 are disposed above the processing spaces 101 and 201, and the arrangements of the first chamber 210a and the second chamber 210b are replaced with each other, the support pins 151 and 251 are replaced. Since the substrate S is supported on the upper side of the processing spaces 101 and 201, the support pins 151 and 251 are preferably provided to adsorb and support the substrate S.

In addition, the stage 130 provided in the plasma processing apparatus 100 according to the first embodiment of the present invention is installed in the processing space 201 of the plasma processing apparatus 200 according to the second embodiment of the present invention. The plasma processing apparatus (not shown) according to the third embodiment of the present invention may be implemented.

At this time, the configuration of the stage 230 provided in the second chamber 210b of the plasma processing apparatus 200 according to the second embodiment of the present invention is omitted, so that the support pin 151 penetrates the stage 130. It is desirable to install to install.

Here, the plasma processing apparatus (100, 200, not shown) of the above-described embodiments, the etching process of the substrate (S), the physical vapor deposition process of the substrate (S), chemical vapor deposition of the substrate (S) It is used for Vapor Deposition (CVD) process. However, in addition to this, various modifications may be made to a substrate processing apparatus (not shown) which supports the substrate S and applies a predetermined treatment to the substrate S in the bonding process of the substrate S. Accordingly, modifications and variations of the embodiments of the present invention will not depart from the spirit of the present invention.

1 is a cross-sectional view schematically showing a plasma processing apparatus according to a first embodiment of the present invention.

FIG. 2 is an enlarged perspective view illustrating part “I” shown in FIG. 1.

3 is a partial cross-sectional perspective view showing a coupling relationship of the substrate support of the plasma processing apparatus according to the first embodiment of the present invention.

4, 5, and 6 are enlarged cross-sectional views showing an operating state by enlarging a part of the plasma processing apparatus according to the first embodiment of the present invention.

7 is a schematic cross-sectional view of a plasma processing apparatus according to a second embodiment of the present invention.

8 is a partial cross-sectional perspective view showing a coupling relationship of the substrate support of the plasma processing apparatus according to the second embodiment of the present invention.

9, 10, and 11 are enlarged cross-sectional views showing an operating state by enlarging a part of the plasma processing apparatus according to the second embodiment of the present invention.

<Description of Signs of Major Parts of Drawings>

100: plasma processing apparatus 110: chamber

120: upper electrode 130: stage

140: stage lift unit 150: stage lift unit

Claims (20)

A chamber providing a processing space of the substrate; A stage disposed inside the chamber to support the substrate A stage lifting unit for elevating the stage inside the chamber; A support pin having one side fixed to the chamber and the other side penetrating through the stage and rising from the stage as the stage moves up and down; A bushing coaxial with the support pin and inserted into the stage such that the support pin penetrates, and an inner wall of the bushing is spaced apart from the support pin; A support jaw protruding from the support pin inside the bushing; And an elastic member for elastically supporting the support jaw from the bushing. delete delete delete A first chamber; A second chamber providing a processing space of a substrate together with the first chamber; A chamber elevating unit for elevating the second chamber to the first chamber side; A substrate support having one side fixed to the outside of the processing space and having a support pin protruding into the processing space while the other side passes through the second chamber as the second chamber moves up and down. Processing unit. The method of claim 5, wherein the substrate support portion, Is inserted into the second chamber having a coaxial with the support pin, And a bushing for preventing abrasion of the second chamber and the support pins due to the lifting and lowering of the second chamber. The method of claim 6, wherein the bushing, Guide holes are formed in contact with the outer peripheral surface of the support pin, The guide hole is a plasma processing apparatus, characterized in that for guiding the lifting of the second chamber along the support pin. The method according to claim 6, The bushing is provided with an inner space spaced apart from the support pin, The support pin is formed to protrude a support jaw at a point located in the inner space, And the substrate support further includes an elastic member for elastically supporting the inner wall of the bushing toward the second chamber and the support jaw. A first chamber; A second chamber providing a processing space of a substrate together with the first chamber; A chamber elevating unit configured to elevate at least one of the first chamber and the second chamber; A stage provided in the processing space to support the substrate for processing the substrate; A stage lifter for elevating the stage inside the processing space; And a substrate supporter having one side fixed to the second chamber and the other side penetrating through the stage, the support pin protruding from the stage as the stage moves up and down. The method of claim 9, wherein the substrate support portion, It is inserted into the stage having a coaxial with the support pin, Plasma processing apparatus further comprises a bushing (bushing) to prevent the wear of the stage and the support pins according to the lifting of the stage. The method of claim 10, wherein the bushing, Guide holes are formed in contact with the outer peripheral surface of the support pin, The guide hole is a plasma processing apparatus, characterized in that for guiding the lifting of the stage along the support pin. 12. The method of claim 11, The bushing is provided with an inner space spaced apart from the support pin, The support pin is formed to protrude a support jaw at a point located in the inner space, The substrate support unit further comprises an elastic member for elastically supporting the inner wall of the bushing toward the stage and the support jaw. A chamber providing a processing space of the substrate; A stage disposed inside the chamber to support the substrate A stage lifting unit for elevating the stage inside the chamber; A support pin having one side fixed to the chamber and the other side penetrating through the stage and rising from the stage as the stage moves up and down; A bushing coaxial with the support pin and inserted into the stage such that the support pin penetrates, and an inner wall of the bushing is spaced apart from the support pin; A support jaw protruding from the support pin inside the bushing; And an elastic member for elastically supporting the support jaw from the bushing. delete delete delete Upper chamber; A lower chamber providing a processing space of a substrate together with the upper chamber; A chamber elevating unit that raises the lower chamber to seal the processing space and lowers the lower chamber to open the processing space; One side is fixed to the outside of the processing space, in accordance with the opening of the processing space, the other side protrudes from the lower chamber to support the substrate spaced from the lower chamber, the other side of the lower portion in accordance with the sealing of the processing space And a substrate support having a support pin embedded in the chamber and seating the substrate on the lower chamber. The method of claim 17, wherein the substrate support portion, It is inserted into the lower chamber having a coaxial with the support pin, And a bushing for preventing abrasion of the lower chamber and the support pin due to the lower chamber lift. The method of claim 18, wherein the bushing, Guide holes are formed in contact with the outer peripheral surface of the support pin, The guide hole is substrate processing apparatus, characterized in that for guiding the lifting of the lower chamber along the support pin. 19. The method of claim 18, The bushing is provided with an inner space spaced apart from the support pin, The support pin is formed to protrude a support jaw at a point located in the inner space, The substrate support unit further comprises an elastic member for elastically supporting the inner wall of the bushing toward the lower chamber and the support jaw.

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