KR100984256B1 - 자기 정렬 그라비어인쇄를 이용한 중첩정밀도 제어 방법 - Google Patents

자기 정렬 그라비어인쇄를 이용한 중첩정밀도 제어 방법 Download PDF

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Publication number
KR100984256B1
KR100984256B1 KR1020090075652A KR20090075652A KR100984256B1 KR 100984256 B1 KR100984256 B1 KR 100984256B1 KR 1020090075652 A KR1020090075652 A KR 1020090075652A KR 20090075652 A KR20090075652 A KR 20090075652A KR 100984256 B1 KR100984256 B1 KR 100984256B1
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KR
South Korea
Prior art keywords
gate electrode
region
gate
drain
thin film
Prior art date
Application number
KR1020090075652A
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English (en)
Korean (ko)
Inventor
조규진
김재영
임채민
오형록
Original Assignee
(주) 파루
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by (주) 파루 filed Critical (주) 파루
Priority to KR1020090075652A priority Critical patent/KR100984256B1/ko
Priority to PCT/KR2010/002639 priority patent/WO2011021763A1/fr
Application granted granted Critical
Publication of KR100984256B1 publication Critical patent/KR100984256B1/ko

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H10K71/611—Forming conductive regions or layers, e.g. electrodes using printing deposition, e.g. ink jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
KR1020090075652A 2009-08-17 2009-08-17 자기 정렬 그라비어인쇄를 이용한 중첩정밀도 제어 방법 KR100984256B1 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020090075652A KR100984256B1 (ko) 2009-08-17 2009-08-17 자기 정렬 그라비어인쇄를 이용한 중첩정밀도 제어 방법
PCT/KR2010/002639 WO2011021763A1 (fr) 2009-08-17 2010-04-27 Méthode de contrôle de la précision de recouvrement recourant à l’impression de gravures à autoalignement

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020090075652A KR100984256B1 (ko) 2009-08-17 2009-08-17 자기 정렬 그라비어인쇄를 이용한 중첩정밀도 제어 방법

Publications (1)

Publication Number Publication Date
KR100984256B1 true KR100984256B1 (ko) 2010-09-30

Family

ID=43010522

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020090075652A KR100984256B1 (ko) 2009-08-17 2009-08-17 자기 정렬 그라비어인쇄를 이용한 중첩정밀도 제어 방법

Country Status (2)

Country Link
KR (1) KR100984256B1 (fr)
WO (1) WO2011021763A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016085029A1 (fr) * 2014-11-25 2016-06-02 순천대학교 산학협력단 Procédé de fabrication de transistor à couches minces sur la base d'une impression en creux rouleau à rouleau, procédé de fabrication de fond de panier de transistor à couches minces, et capteur de pression de fond de panier et procédé de fabrication de plancher intelligent
KR101631923B1 (ko) 2015-10-27 2016-06-20 국방과학연구소 전도성 잉크와 대기압 플라즈마 젯을 이용한 다양한 패턴의 유연 플라즈마 전극 제작 방법

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11185918B2 (en) 2015-07-03 2021-11-30 National Research Council Of Canada Self-aligning metal patterning based on photonic sintering of metal nanoparticles
EP3318111B1 (fr) 2015-07-03 2023-10-04 National Research Council of Canada Procédé d'impression de lignes à écarts ultra-étroits
EP3318110B1 (fr) 2015-07-03 2021-01-13 National Research Council of Canada Procédé d'impression d'une ligne utlra-étroite

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008078339A (ja) * 2006-09-21 2008-04-03 Konica Minolta Holdings Inc 有機半導体層の成膜方法、有機薄膜トランジスタの製造方法
JP2008124445A (ja) * 2006-10-17 2008-05-29 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW554538B (en) * 2002-05-29 2003-09-21 Toppoly Optoelectronics Corp TFT planar display panel structure and process for producing same
JP2006269709A (ja) * 2005-03-24 2006-10-05 Hitachi Ltd 有機薄膜トランジスタを有する半導体装置の製造方法
US7655566B2 (en) * 2005-07-27 2010-02-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8937013B2 (en) * 2006-10-17 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008078339A (ja) * 2006-09-21 2008-04-03 Konica Minolta Holdings Inc 有機半導体層の成膜方法、有機薄膜トランジスタの製造方法
JP2008124445A (ja) * 2006-10-17 2008-05-29 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016085029A1 (fr) * 2014-11-25 2016-06-02 순천대학교 산학협력단 Procédé de fabrication de transistor à couches minces sur la base d'une impression en creux rouleau à rouleau, procédé de fabrication de fond de panier de transistor à couches minces, et capteur de pression de fond de panier et procédé de fabrication de plancher intelligent
KR101680433B1 (ko) * 2014-11-25 2016-11-29 순천대학교 산학협력단 롤대롤 그라비아 인쇄기반 박막트랜지스터 제조방법, 박막트랜지스터 백플랜 제조방법, 백플랜 압력센서 및 스마트 장판의 제조방법
KR101631923B1 (ko) 2015-10-27 2016-06-20 국방과학연구소 전도성 잉크와 대기압 플라즈마 젯을 이용한 다양한 패턴의 유연 플라즈마 전극 제작 방법

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Publication number Publication date
WO2011021763A1 (fr) 2011-02-24

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