KR100974041B1 - Apparatus for depositing film and methdod for measureing film thickness - Google Patents

Abstract

The present invention provides a chamber, a substrate support part provided in the chamber to support a substrate, a raw material supply part disposed opposite to the substrate to supply a raw material of an organic film to the substrate, and a chamber for measuring thickness of the organic film deposited on the substrate. It provides a film deposition apparatus and a film thickness measuring method comprising at least one sensor provided in the chamber and at least one regeneration means provided in the chamber for removing the organic film deposited on the surface of the sensor.

In the present invention, a plurality of sensors are provided and used for monitoring thin film thickness deposited on a substrate in a vacuum chamber, and the used sensors are cleaned and used again in the vacuum chamber. Therefore, since the sensor itself can be used semi-permanently as long as the life of the end of life, it is possible to operate the equipment for a long time without breaking the vacuum of the chamber, it is possible to reduce the replacement cost of the sensor.

Organic Film, Thin Film Thickness, Sensor, Crystal Oscillator, Thickness Measurement, Chamber

Description

Film deposition apparatus and film thickness measuring method {APPARATUS FOR DEPOSITING FILM AND METHDOD FOR MEASUREING FILM THICKNESS}

The present invention relates to a film deposition apparatus, and more particularly, to a film deposition apparatus and a film thickness measuring method for measuring the thickness of a film deposited on a substrate.

In general, in manufacturing an organic light emitting diode (OLED), the most important process is a process of forming an organic film, and a vacuum deposition method is mainly used to form such an organic film.

In the vacuum deposition method, a substrate such as glass and a point evaporation source or a linear evaporation source containing powder raw materials are opposed to each other, and the raw material evaporated by vaporizing a solid or liquid raw material contained in the evaporation source. Spraying to form an organic film on one surface of the substrate. At this time, since it is necessary to control the thickness of the organic film formed in the board | substrate, a film thickness measuring apparatus is usually provided in a chamber.

The film thickness measuring apparatus includes a sensor such as a crystal oscillator. The principle of measuring the thickness of the film deposited on the substrate is that the signal from the sensor depends on the amount of material deposited on the surface of the sensor and deposited on the surface of the sensor as soon as the film raw material provided from the evaporation source for film deposition is deposited on the substrate. Is processed to display the thickness of the film deposited on the substrate. At this time, when the thickness of the film formed on the surface of the sensor reaches a predetermined value, the sensor can no longer perform normal operation, which can be called a defective state, and should be used to measure the film thickness by replacing it with a new sensor.

The film thickness meter for long time use is a revolver composed of a disk on which one surface of the plurality of sensors is arranged in a circumferential shape, and a cover that is coupled to cover the front surface of the disk to expose only one of the plurality of sensors. Revolver type is mainly used. Such a film thickness meter can be used in a vacuum chamber to deposit a film with a predetermined thickness or more on the surface of the sensor in use, and to replace the other sensor by rotating the disk when it reaches the end of its life, so that the film forming process can be performed for a relatively long time without opening the chamber. There are advantages to it.

However, the conventional film thickness meter can only slightly increase the replacement cycle of the sensor, and when the life of all the sensors provided ends, the chamber must be opened to replace all the sensors of the film thickness meter with new ones. Therefore, not only the replacement cost of the sensor is incurred, but also the vacuum breakage is inevitable. Once the chamber is opened and the vacuum environment is destroyed, it takes a certain amount of time to recover the original vacuum environment, which makes it difficult to produce stable products.

The present invention has been proposed to solve the above problems, by reusing and using the used sensor in the chamber, by minimizing vacuum breakdown due to the replacement operation of the sensor, it is possible to stably produce the product while preventing productivity degradation It is an object to provide a film deposition apparatus and a film thickness measuring method.

In addition, another object of the present invention is to provide a film deposition apparatus and a film thickness measuring method capable of reducing a replacement cost of a sensor by reusing a used sensor.

In accordance with an aspect of the present invention, a film deposition apparatus includes: a chamber; A substrate support part provided in the chamber to support a substrate; A raw material supply unit disposed to face the substrate and supply a raw material of a film to the substrate; At least one sensor provided in the chamber for measuring a thickness of a film deposited on the substrate; And at least one regeneration means provided in the chamber to remove the film deposited on the surface of the sensor; Include.

Preferably, the sensor is provided in plurality.

It is preferable to include a cover member disposed in front of the plurality of sensors and a container member in which an opening is covered by the cover member and in which the plurality of sensors are accommodated.

Preferably, the cover member has a first opening that exposes a sensor to be used for thickness measurement.

Preferably, the cover member is provided with a second opening that exposes a sensor to be regenerated after being used for thickness measurement.

At least one of the first and second openings is preferably provided with a shutter for opening and closing the passage.

The plurality of sensors are sequentially selected and used, and it is preferable that the sensors used for the thickness measurement are reproduced by the reproducing means and used again.

The raw material supply unit preferably includes at least one organic material evaporation source arranged in the form of dots or lines.

At least one of the raw material supply unit and the substrate preferably includes a driving member for relative movement between each other.

In the above, the regeneration means preferably comprises at least one of radiant energy means, direct heating means, ion milling means and plasma etching means. In this case, the radiant energy means may include at least one of an infrared lamp, a lamp, a laser, a coil heater, and a plate heater, and the direct heating means may include a resistance heating heater and an induction heating heater.

According to another aspect of the present invention, there is provided a method for measuring a film thickness, the method including: providing a film thickness measuring device having a sensor for measuring film thickness in a chamber; Measuring the thickness of a film deposited on a substrate in the chamber using the sensor; And regenerating the sensor by removing a film deposited on the surface of the sensor in the chamber. It includes.

The sensor may be provided in plurality, and the thickness measurement of the film may be performed by sequentially selecting the plurality of sensors.

It is preferable that a plurality of the sensors are provided, and at the same time as the regenerating step, a sensor not used in the measuring step is selected to continuously measure the thickness of the film deposited on the substrate.

It is preferable that the film thickness measuring device is provided in plural, and at the same time as the regenerating step, another film thickness device having a sensor not used in the measuring step is selected to continuously measure the thickness of the film deposited on the substrate.

The removing of the film is preferably performed using at least one of the radiant energy means, direct heating means, ion milling means and plasma etching means.

After removal of the film, measuring the thickness of the film deposited on the substrate using the sensor from which the film was removed; It is preferable to further include.

In the present invention, a plurality of sensors for monitoring film thickness deposited on a substrate in a vacuum chamber are alternately used, and the used sensors are regenerated and used again in the vacuum chamber. Therefore, since it can be used semi-permanently as long as the life of the sensor itself is not used, it is possible to reduce the replacement cost of the sensor.

In addition, the present invention can minimize the vacuum breakdown due to the replacement operation of the sensor, it is possible to produce a product stably while preventing a decrease in productivity due to the interruption of the process.

Hereinafter, with reference to the accompanying drawings will be described an embodiment according to the present invention in more detail. It will be apparent to those skilled in the art that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, It is provided to let you know. Like reference numerals in the drawings refer to like elements.

1 is a schematic diagram of a film deposition apparatus including a film thickness measurement apparatus according to a first embodiment of the present invention, and FIG. 2 is a cross-sectional view of the film thickness measurement apparatus according to the first embodiment of the present invention. 3 and 4 are plan views of the film thickness measuring apparatus according to the first embodiment of the present invention, which are shown in the direction 'A' of FIG.

Referring to FIG. 1, the film deposition apparatus includes a chamber 110, a substrate support part 120 provided in the chamber 110 to support the substrate G, and a substrate facing the substrate G. A raw material supply unit 150 for supplying a raw material to (G) and a film thickness measuring device 170 for detecting the thickness of the film deposited on the substrate (G).

The chamber 110 is formed in a cylindrical or rectangular box shape, and a predetermined reaction space is provided inside the chamber 110 to process the substrate G. In the above, the chamber 110 is formed in a cylindrical or rectangular box shape, but is not limited thereto. The chamber 110 may be formed in a shape corresponding to the shape of the substrate G. In addition, a gate 111 for entering and exiting the substrate G may be formed at one side wall of the chamber 110, and an exhaust 112 for internal exhaust may be provided at the other side wall of the chamber 110. Can be. Here, the gate 111 may be configured as a slit valve, and the exhaust 112 may be configured as a vacuum pump. On the other hand, while the chamber 110 has been described as an integrated unit, the chamber 110 may be divided into a lower chamber with an open upper portion and a chamber lid covering the upper portion of the lower chamber.

The substrate support part 120 is provided at an upper portion of the chamber 110 and supports the substrate G introduced into the chamber 110. In the present exemplary embodiment, a shadow mask 140 having a predetermined deposition pattern is disposed on a deposition surface of the substrate G, that is, a lower surface thereof, and the shadow mask 140 has an inner side at the sidewall of the chamber 110. It is coupled to the frame 130 protruding toward and fixed to the side wall of the chamber 110. In addition, the shadow mask 140 or the frame 130 is formed with a plurality of through holes 131 penetrating up and down, and through the plurality of through holes 131 protrusions of the substrate support 120 up and down It is comprised so that it may be elevated and supports the board | substrate G. The substrate support part 120 may be configured to include a plurality of protrusions extending upward to support the bottom surface of the substrate G and a lifting part (not shown) for moving the protrusions up and down. Of course, the substrate supporter 120 may be disposed on the substrate G as well as the substrate G if the substrate G can support the substrate G. For example, the substrate support 120 may include a support for supporting the substrate G on a lower surface thereof, and a driver for moving the support. Here, the support may be further configured with a variety of chuck means for holding the substrate (G) using a mechanical force, vacuum suction force, electrostatic force and the like. In addition, the driving unit may also rotate the support while moving the support vertically or horizontally.

Meanwhile, a means (not shown) for controlling the temperature of the shadow mask 140 in or around the frame 130 holding the shadow mask 140, for example, a resistance heating heater or a lamp heater. Cooling means, such as heating means or cooling lines, may be further provided. Although not shown, a cooling line is embedded in the frame 140 of the present embodiment to prevent a sudden temperature rise of a shadow mask disposed on the bottom surface of the substrate G.

The raw material supply unit 150 is provided at a lower portion or a side of the chamber 110 so as to face the substrate G supported by the substrate support 120, and serves to evaporate and supply the raw material to the substrate G. The raw material supply unit 150 has at least one evaporation source disposed in the form of points or lines. The evaporation source includes a crucible 152 in which the raw material 152 is stored, a shutter 153 for opening and closing the crucible 152, and a heating member (not shown) for heating the crucible 152. The crucible 152 is formed in a box shape with an open top, and the raw material 152 is filled in the crucible 152. The heating member serves to provide heat to the crucible 152 to evaporate the raw material 152 stored in the crucible 152. Here, the heating member may be embedded in the body of the crucible 152 or may be separately provided outside or inside. The shutter 153 opens or blocks a path through which the raw material evaporated from the crucible 152 is supplied to the substrate G.

2 and 3, the film thickness measuring apparatus 170 includes a plurality of sensors 210a and 210b spaced apart in the circumferential direction and a rotating member for integrally rotating the plurality of sensors 210a and 210b. An opening is covered by the cover member 230 and the cover member 230 which covers the outside of the plurality of sensors 210a and 210b and covers the outside of the plurality of sensors 210a and 210b. The plurality of sensors (210a, 210b) and the rotating member 220 includes a container member 260 that is accommodated therein, is provided on the outside of the cover member 230 of the plurality of sensors (210a, 210b) It further comprises a radiation energy means 250 disposed in front of one. The film thickness measuring apparatus 170 is mounted to the support 160 extending in the center direction from the side wall of the chamber 110 by a predetermined length, the radiant energy means 250 may be configured in one piece or separate.

The sensors 210a and 210b detect the film thickness deposited on the surface to monitor the film thickness deposited on the substrate G. When the film is deposited on the surface of the sensor (210a, 210b), the natural frequency of the crystal oscillator 211 is changed, it is preferable to use a crystal oscillator sensor that can know the thickness of the film through this. Of course, a separate control circuit (not shown) for measuring the frequency change of the sensors 210a and 210b and converting the measured frequency change into the thickness of the film deposited on the substrate G may be applied to the sensor body 212 itself. It will be built in or externally. The sensors 210a and 210b are provided in plural in one chamber 110, mounted on one surface of the flat plate member 240, and spaced apart from each other by a constant distance along the circumferential direction.

The rotation member 220 includes a rotation shaft 222 coupled to the center of the flat plate member 240 and a driving unit 221 for applying rotational force to the rotation shaft 222. Here, the driving unit 221 may preferably use a step motor or the like capable of finely rotating the rotation shaft 222 by a predetermined angle.

The cover member 230 is disposed at a front end of the sensors 210a and 210b at a predetermined distance, and among the first openings 231a and the remaining sensors exposing at least one 210a of the plurality of sensors 210a and 210b. And a second opening 231b exposing at least one 210b. At this time, the first opening 231a serves as a passage through which the film material flows into the sensor 210a in a normal state so as to detect the film thickness deposited on the substrate G during the film process. It is preferably formed to be fully open toward 150). On the other hand, since the second opening 231b serves as a passage through which radiant energy is applied to remove the film material deposited on the surface of the used sensor 210b, the outlet direction is formed so as to be blocked toward the raw material supply unit 150. Preferably, the radiant energy means 250 is provided in front of the outlet. At least one of the first opening 231a and the second opening 231b may be further provided with a shutter (not shown) for opening or closing the opening area.

The radiant energy means 250 plays a role of regenerating the sensor 210b, which is no longer usable, by regenerating an organic film having a predetermined thickness on its surface and reusing it to an initial state. That is, by applying radiant energy, the surface of the sensor 210b is heated, and the film material deposited on the surface of the sensor 210b is evaporated and removed to remove the film 210b. Restore the state. The radiant energy means 250 has a radiant energy source 251 for generating radiant energy, and may further include a reflector 252 for concentrating the radiant energy in one direction as necessary. have. In this case, as the radiant energy source 251, at least one of an infrared lamp, a lamp, a laser, a coil heater, and a plate heater that may emit light may be used, and the reflector 252 may be used. The furnace may use a hemispherical reflective surface with a radiant energy source 251 disposed in the center.

Meanwhile, in the above, the radiant energy means 250 is installed on the outside (or front) of the cover member 230, but may be installed on the inside (or back) of the cover member 230. In this case, the cover member 230 should be manufactured to a size that can accommodate the radiant energy means 250, and the second opening 231b for exposing the already used sensor will be unnecessary. In addition, in the above, a plurality of sensors 210a and 210b are moved while the radiant energy means 250 is fixed, so that the sensor 210a or the sensor 210b to be regenerated to be used for measuring the film thickness is selected. It is also possible. For example, the radiation energy means 250 may be moved while the plurality of sensors 210a and 210b are fixed to select the sensor 210a or the sensor 210b to be regenerated to be used for measuring the film thickness. The radiation energy means 250 and the plurality of sensors 210a and 210b may be moved together to select the sensor 210a or the sensor 210b to be regenerated to be used for measuring the film thickness. As such, when the radiant energy means 250 is movable, the radiant energy means 250 may be moved to the front end of the second opening 231b only when necessary. Therefore, since the operation of the sensor 210a exposed through the first opening 231a and used for measuring the film thickness is not disturbed by the radiant energy means 250, the thickness of the film deposited on the substrate G can be measured more reliably. can do.

An operation process of the film thickness measuring apparatus according to the present embodiment configured as described above will be briefly described with reference to FIGS. 1 to 4.

First, the film thickness measuring apparatus 170 including a plurality of sensors for detecting film thickness, for example, two sensors 210a and 210b, is mounted in the chamber 110. At this time, the two sensors (210a, 210b) is not used both, the number of sensors may be two or more, that is, four (210a, 210b, 210c, 210d) as shown in FIG. Meanwhile, when the substrate G is introduced into the chamber 110 and mounted on the substrate support 130, the raw material 152 is evaporated from the raw material supply unit 150, and the evaporated raw material is one surface of the substrate G. That is, it is deposited on the lower surface to form a film. In this case, the film pattern formed on the substrate G is regulated according to the pattern shape of the shadow mask 140 disposed under the substrate G. In addition, the raw material 152 evaporated from the raw material supply unit 150 is also supplied toward the film thickness measuring device 170, and a film having a predetermined thickness on the surface of the sensor 210a exposed through the first opening 231a. To form. Accordingly, by using the sensor 210a exposed through the first opening 231a, a film having a desired thickness can be formed while monitoring the film thickness formed on the substrate G. In this case, in order to form a film having a uniform thickness on the large-area substrate G, the evaporation source of the raw material supply unit 150 is linearly disposed, and the linear evaporation source and the substrate G are relatively moved with each other. It would be desirable to be configured to. For example, at least one of the raw material supply unit 150 and the substrate G may be connected to a driving member for relative movement between each other. On the other hand, when a film is deposited on the surface of the sensor 210a exposed through the first opening 231a to a thickness of about a threshold value, the plate-shaped member 240 is rotated by 180 degrees so that the remaining unused sensor 210b is opened in the first opening ( 231a), and the film process is continued while monitoring the film thickness formed on the substrate G. On the other hand, the sensor 210a, which is used to measure the thickness of the film and is deposited with a thickness of about a threshold on the surface thereof, is exposed through the second opening 231b to receive radiant energy. Accordingly, the film material deposited on the exposed surface of the sensor 210a used for the thickness measurement is evaporated and removed, so that the sensor 210a used for the thickness measurement is regenerated in the original initial state in the vacuum chamber 110. Can be used again. The radiant energy source may emit radiant energy at all times or may radiate radiant energy temporarily by applying power as necessary.

If the radiant energy means 250 is movable, the radiant energy means 250 is moved to the front end of the second opening 231b with the second opening 231b closed by the shutter. Subsequently, as the shutter of the second opening 231b is opened, radiant energy is applied to evaporate and remove the film material deposited on the surface of the sensor 210a used for the thickness measurement. Thereafter, the shutter of the second opening 231b is closed, and the radiant energy means 250 is moved to a position that does not prevent deposition of the film material on the surface of the sensor exposed through the first opening 231b. In this process, the process may be suspended while the radiant energy means 250 moves and while the radiant energy means 250 regenerates the sensor 210a used to measure the thickness.

As described above, the film thickness measuring apparatus 170 according to the present invention can be used semi-permanently as long as the life of the sensor itself is not reached because the sensor used for measuring the thickness is regenerated and used again in the chamber. Therefore, not only the replacement cost of the sensor can be reduced, but also the vacuum breakage caused by the replacement work can be minimized. As a result, frequent vacuum breakage can be avoided, thereby enabling stable product production.

5 is a schematic diagram of a film deposition apparatus including a film thickness measuring apparatus according to a second embodiment of the present invention, and FIG. 6 is a cross-sectional view of the film thickness measuring apparatus according to the second embodiment of the present invention.

5 and 6, the film thickness measuring apparatus 510 is mounted on a support 520 extending from the raw material supply unit 150. As such, the film thickness measuring apparatus 510 may be a place where raw material evaporated from the raw material supply unit 510 may reach within the range of not affecting the deposition of the substrate G as well as the sidewall of the chamber 110. It can be installed anywhere inside the chamber 110. In addition, the film thickness measuring apparatus 510 has an outer cover 511 that surrounds the outside of the radiant energy means 250. The outer cover 511 prevents the film material evaporated from the defective sensor from reaching other components, for example, the sensor 210a exposed to the first opening 231a, the substrate G, and the like. . In addition, the outer cover 511 may be provided with a separate exhaust port 512 for exhausting the vaporized film material to the outside of the chamber 110.

In the meantime, in the film thickness measuring apparatuses 170 and 510 according to the first and second exemplary embodiments, a plurality of sensors 210a and 210b are provided in one chamber 110 and the remaining sensors are subjected to a regeneration process. The film forming process may be continuously performed by alternately using the plurality of sensors 210a and 210b by measuring the thickness of the film deposited on the furnace substrate G. However, alternatively, a single sensor may be provided in one chamber 110. In this case, since the thickness of the film deposited on the substrate G cannot be measured when the reproducing process is performed for the used sensor, it may be preferable to suspend the film forming process. In addition, a plurality of film thickness devices 170 and 510 are provided in the chamber 110. When a regeneration process is performed on one of the film thickness devices, the thickness of the film deposited on the substrate G is measured by the remaining film thickness devices. In such a manner, a plurality of film thickness devices may be used alternately to proceed with the film forming step continuously.

In addition, in the film thickness measuring apparatuses 170 and 510 according to the first and second embodiments described above, the radiant energy means 250 may be applied to the surface of the sensor used in the chamber 110 without breaking the vacuum of the chamber 110. Any other means can be substituted if the deposited film material can be removed. For example, the organic film used for manufacturing the organic light emitting device is easily vaporized and evaporated at a temperature of about 300 to 600 ℃. Accordingly, the film material deposited on the surface of the sensor can be removed by applying heat to the surface of the sensor using radiant energy using a lamp, a heater, a laser, or the like, or direct heating by contact with the heater. The direct heating means is a means for heating the sensor and the surface of the sensor to a high temperature by directly contacting the wire heater or the plate heater to the sensor to evaporate the material deposited on the surface of the sensor, resistance heating heaters and induction heating heaters of various types And the like. In addition, even when dry etching by plasma or ion milling or the like is used, organic substances deposited on the surface of the sensor can be easily removed. On the other hand, in the case of a metal film vaporized at a high temperature of about 1000 ° C. or more, or a mixed film of an organic material and an inorganic material, it is not easy to remove it by heating. Therefore, in order to remove the material from the surface of the sensor, a method such as dry etching or ion milling by plasma may be more advantageous. The above process technology is not only widely used and stabilized in the semiconductor process, but also has a low process temperature, and thus, there is little concern about damage to the sensor itself. Hereinafter, a case in which dry etching or ion milling by plasma is used as the regeneration means will be described in more detail.

7 is a cross-sectional view of a film thickness measuring apparatus according to a third embodiment of the present invention.

Referring to FIG. 7, in the film thickness measuring apparatus, ion milling means 600 is provided in front of the cover member 260 in which the plurality of sensors 210a and 210b are accommodated. The ion milling means 600 accelerates the positive ions generated by the plasma to a predetermined voltage, impinges the accelerated positive ions on the surface of the used sensor 210b and physically deposits them on the surface of the sensor 210b. It can be constructed in a variety of ways as a means to remove the material, ie organic, inorganic, or metal film. For example, the ion milling means 600 is disposed in front of the container portion 610 and the opening portion of the container portion 610 having at least one open inner space and a gas injection port communicating with the inner space. It may be configured as an ion beam generating device including a grid (620) and the power supply unit 630 for applying a plasma voltage and an acceleration voltage to the container portion and the grid 620. After injecting a gas, for example, oxygen or argon gas into the container part 610, and then applying a plasma power source, for example, RF power to the container part 610, a plasma P1 is formed therein to positively charge. Particles, that is, positive ions are generated, and positive ions are accelerated toward the grid 620 to which an accelerating voltage, for example, DC power is applied, are emitted to the outside and collide with the surface of the sensor 210b. The regeneration of the ion milling means 600 has the advantage of removing not only organic films but also all films such as metal films, SiO ₂ , and Si ₃ N ₄ .

8 is a cross-sectional view of a film thickness measuring apparatus according to a fourth embodiment of the present invention.

Referring to FIG. 8, the film thickness measuring apparatus is provided with plasma etching means in front of the cover member 260 in which the plurality of sensors 210a and 210b are accommodated. The plasma etching may be configured in various ways as a means for etching the material deposited on the surface of the sensor 210b used by generating the plasma P2 by the plasma. For example, the plasma generating means may include an antenna for emitting electromagnetic waves for generating plasma P2, and a power supply unit 710 for applying plasma power to the antenna. In this case, a cover member 260 for accommodating the sensors 210a and 210b may be used as the antenna, or an additional shutter (not shown) may be disposed in front of the cover member 260 and the shutter may be an antenna. It can also be used. In addition, the power supply unit 250 may further include a matcher for impedance matching.

On the other hand, in the above it is illustrated that the film thickness measuring apparatus that can be reused in the sensor is applied to the film deposition apparatus of the method of forming a film by evaporating the raw material in vacuum, the present invention is not limited to this, PECVD (Plasma Enhanced Chemical Vapor) Deposition), sputtering (sputtering) may be applied to various film deposition apparatus.

As mentioned above, although this invention was demonstrated with reference to the above-mentioned Example and an accompanying drawing, this invention is not limited to this, It is limited by the following claims. Therefore, it will be apparent to those skilled in the art that the present invention may be variously modified and modified without departing from the technical spirit of the following claims.

1 is a schematic diagram of a film deposition apparatus including a film thickness measurement apparatus according to a first embodiment of the present invention.

2 is a cross-sectional view of a film thickness measuring apparatus according to a first embodiment of the present invention.

3 and 4 are plan views of the film thickness measuring apparatus according to the first embodiment of the present invention.

5 is a schematic view of a film deposition apparatus including a film thickness measurement apparatus according to a second embodiment of the present invention.

6 is a cross-sectional view of a film thickness measuring apparatus according to a second embodiment of the present invention.

7 is a cross-sectional view of a film thickness measuring apparatus according to a third embodiment of the present invention.

8 is a cross-sectional view of a film thickness measuring apparatus according to a fourth embodiment of the present invention.

<Explanation of symbols for the main parts of the drawings>

110: chamber 120: substrate support

140: shadow mask 160: support

170,510: film thickness measuring device 210a to 210d: sensor

220: rotating member 230: cover member

240: plate member 250: radiant energy means

260: container member 511: outer cover

G: Substrate

Claims (18)

chamber; A substrate support part provided in the chamber to support a substrate; A raw material supply unit disposed to face the substrate and supply a raw material of a film to the substrate; A plurality of sensors provided in the chamber for measuring a thickness of a film deposited on the substrate; A container member accommodating the plurality of sensors and having one surface open; A cover member provided to cover the opening of the container member to cover the outside of the plurality of sensors and to expose one of the plurality of sensors; And And at least one regenerating means provided inside or outside the cover member inside the chamber and disposed in front of one of the plurality of sensors to remove the film deposited on the surface of the sensor. The method according to claim 1, The sensor is a film deposition apparatus provided in plurality. delete The method according to claim 1, And the cover member is formed with a first opening for exposing a sensor to be used for thickness measurement. The method according to claim 4, And a second opening formed in the cover member to expose a sensor to be regenerated after being used for thickness measurement. The method according to claim 5, At least one of the first and second openings is provided with a shutter for opening and closing the passage. The method according to claim 2, And the plurality of sensors are selected and used sequentially, and the sensor used for the thickness measurement is reproduced by the regenerating means and used again. The method according to claim 1, The raw material supply unit film deposition apparatus including at least one organic material evaporation source disposed in the form of points or lines. The method according to claim 8, At least one of the raw material supply unit and the substrate includes a drive member for relative movement between each other. The method according to any one of claims 1, 2, 4 to 9, The regeneration means, A film deposition apparatus comprising at least one of radiant energy means, direct heating means, ion milling means and plasma etching means. The method according to claim 10, And said radiant energy means comprises at least one of an infrared lamp, a lamp, a laser, a coil heater and a plate heater. The method according to claim 10, The direct heating means includes a resistive heating heater and an induction heating heater. A plurality of sensors for measuring the film thickness are accommodated in the container member in the chamber, and are provided to cover the opening of the container member so as to cover the outside of the plurality of sensors to expose one of the plurality of sensors. Providing a film thickness measuring apparatus provided in the apparatus, the film thickness measuring apparatus including regeneration means disposed in front of one of the plurality of sensors; Measuring the thickness of a film deposited on a substrate in the chamber using the sensor; And And regenerating the sensor by removing the film deposited on the surface of the sensor in the chamber by using the regeneration means provided in the chamber. 14. The method of claim 13, The sensor is provided in plurality, The thickness measuring step of the film thickness measuring method using the plurality of sensors sequentially selected. 14. The method of claim 13, The sensor is provided in plurality, And measuring a thickness of the film deposited on the substrate by selecting a sensor not used in the measuring step simultaneously with the regenerating step. 14. The method of claim 13, The film thickness measuring device is provided in plurality, At the same time as the regenerating step, another film thickness device having a sensor not used in the measuring step is selected to continuously measure the thickness of the film deposited on the substrate. The method according to any one of claims 13 to 16, Removing the membrane, A film thickness measuring method performed using at least one of radiant energy means, direct heating means, ion milling means, and plasma etching means. The method according to any one of claims 13 to 16, After removal of the membrane, Measuring the thickness of the film deposited on the substrate using the sensor from which the film was removed again; The film thickness measuring method further comprising.

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