KR100957601B1 - 집적된 고성능의 실리사이드 응집 퓨즈를 갖는 ｃｍｏｓ 공정 - Google Patents

집적된 고성능의 실리사이드 응집 퓨즈를 갖는 ｃｍｏｓ 공정 Download PDF

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Publication number
KR100957601B1
KR100957601B1 KR1020047008979A KR20047008979A KR100957601B1 KR 100957601 B1 KR100957601 B1 KR 100957601B1 KR 1020047008979 A KR1020047008979 A KR 1020047008979A KR 20047008979 A KR20047008979 A KR 20047008979A KR 100957601 B1 KR100957601 B1 KR 100957601B1
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South Korea
Prior art keywords
fuse
insulator
polysilicon layer
layer
region
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Expired - Fee Related
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KR1020047008979A
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Korean (ko)
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KR20040064302A (ko
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두루시일시비
피셔필립에이.
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어드밴스드 마이크로 디바이시즈, 인코포레이티드
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Assigned to 글로벌파운드리즈 인크. reassignment 글로벌파운드리즈 인크. 권리의 전부이전등록 Assignors: 어드밴스드 마이크로 디바이시즈, 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0172—Manufacturing their gate conductors
    • H10D84/0177—Manufacturing their gate conductors the gate conductors having different materials or different implants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS

Landscapes

  • Design And Manufacture Of Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
KR1020047008979A 2001-12-10 2002-12-09 집적된 고성능의 실리사이드 응집 퓨즈를 갖는 ｃｍｏｓ 공정 Expired - Fee Related KR100957601B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/014,064 2001-12-10
US10/014,064 US6756255B1 (en) 2001-12-10 2001-12-10 CMOS process with an integrated, high performance, silicide agglomeration fuse
PCT/US2002/039482 WO2003050858A1 (en) 2001-12-10 2002-12-09 Cmos process with an integrated, high performance, silicide agglomeration fuse

Publications (2)

Publication Number Publication Date
KR20040064302A KR20040064302A (ko) 2004-07-16
KR100957601B1 true KR100957601B1 (ko) 2010-05-13

Family

ID=21763328

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020047008979A Expired - Fee Related KR100957601B1 (ko) 2001-12-10 2002-12-09 집적된 고성능의 실리사이드 응집 퓨즈를 갖는 ｃｍｏｓ 공정

Country Status (9)

Country Link
US (1) US6756255B1 (https=)
EP (1) EP1451860B1 (https=)
JP (1) JP4651941B2 (https=)
KR (1) KR100957601B1 (https=)
CN (1) CN100352009C (https=)
AU (1) AU2002357140A1 (https=)
DE (1) DE60224712T2 (https=)
TW (1) TWI270961B (https=)
WO (1) WO2003050858A1 (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050124097A1 (en) * 2003-12-05 2005-06-09 Advanced Micro Devices, Inc Integrated circuit with two phase fuse material and method of using and making same
US7645687B2 (en) * 2005-01-20 2010-01-12 Chartered Semiconductor Manufacturing, Ltd. Method to fabricate variable work function gates for FUSI devices
US7817455B2 (en) * 2005-08-31 2010-10-19 International Business Machines Corporation Random access electrically programmable e-fuse ROM
US7645645B2 (en) * 2006-03-09 2010-01-12 International Business Machines Corporation Electrically programmable fuse structures with terminal portions residing at different heights, and methods of fabrication thereof
US7417300B2 (en) 2006-03-09 2008-08-26 International Business Machines Corporation Electrically programmable fuse structures with narrowed width regions configured to enhance current crowding and methods of fabrication thereof
US7288804B2 (en) 2006-03-09 2007-10-30 International Business Machines Corporation Electrically programmable π-shaped fuse structures and methods of fabrication thereof
US7784009B2 (en) * 2006-03-09 2010-08-24 International Business Machines Corporation Electrically programmable π-shaped fuse structures and design process therefore
US7460003B2 (en) * 2006-03-09 2008-12-02 International Business Machines Corporation Electronic fuse with conformal fuse element formed over a freestanding dielectric spacer
US7924597B2 (en) * 2007-10-31 2011-04-12 Hewlett-Packard Development Company, L.P. Data storage in circuit elements with changed resistance
US8354304B2 (en) * 2008-12-05 2013-01-15 Stats Chippac, Ltd. Semiconductor device and method of forming conductive posts embedded in photosensitive encapsulant
CN102549737B (zh) * 2009-08-27 2014-09-24 松下电器产业株式会社 半导体装置及其制造方法
US8912626B2 (en) 2011-01-25 2014-12-16 International Business Machines Corporation eFuse and method of fabrication
US12408563B1 (en) * 2020-08-24 2025-09-02 Synopsys, Inc. Superconducting anti-fuse based field programmable gate array

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998027595A1 (en) * 1996-12-18 1998-06-25 Intel Corporation A silicide agglomeration fuse device with notches to enhance programmability
US6022775A (en) 1998-08-17 2000-02-08 Taiwan Semiconductor Manufacturing Company High effective area capacitor for high density DRAM circuits using silicide agglomeration
US6242790B1 (en) 1999-08-30 2001-06-05 Advanced Micro Devices, Inc. Using polysilicon fuse for IC programming

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4042950A (en) * 1976-03-01 1977-08-16 Advanced Micro Devices, Inc. Platinum silicide fuse links for integrated circuit devices
JPS60261154A (ja) * 1984-06-08 1985-12-24 Hitachi Micro Comput Eng Ltd 半導体集積回路装置の製造方法
US4647340A (en) * 1986-03-31 1987-03-03 Ncr Corporation Programmable read only memory using a tungsten fuse
JPH0424945A (ja) * 1990-05-16 1992-01-28 Seiko Instr Inc 半導体装置の製造方法
US5708291A (en) * 1995-09-29 1998-01-13 Intel Corporation Silicide agglomeration fuse device
US5821160A (en) * 1996-06-06 1998-10-13 Motorola, Inc. Method for forming a laser alterable fuse area of a memory cell using an etch stop layer
US5976943A (en) * 1996-12-27 1999-11-02 Vlsi Technology, Inc. Method for bi-layer programmable resistor
FR2760563A1 (fr) * 1997-03-07 1998-09-11 Sgs Thomson Microelectronics Pseudofusible et application a un circuit d'etablissement d'une bascule a la mise sous tension
JP2001077050A (ja) * 1999-08-31 2001-03-23 Toshiba Corp 半導体装置の製造方法
US6391767B1 (en) * 2000-02-11 2002-05-21 Advanced Micro Devices, Inc. Dual silicide process to reduce gate resistance
JP2001326242A (ja) * 2000-05-16 2001-11-22 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
US6642601B2 (en) * 2000-12-18 2003-11-04 Texas Instruments Incorporated Low current substantially silicide fuse for integrated circuits

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998027595A1 (en) * 1996-12-18 1998-06-25 Intel Corporation A silicide agglomeration fuse device with notches to enhance programmability
US6022775A (en) 1998-08-17 2000-02-08 Taiwan Semiconductor Manufacturing Company High effective area capacitor for high density DRAM circuits using silicide agglomeration
US6242790B1 (en) 1999-08-30 2001-06-05 Advanced Micro Devices, Inc. Using polysilicon fuse for IC programming

Also Published As

Publication number Publication date
CN100352009C (zh) 2007-11-28
EP1451860B1 (en) 2008-01-16
WO2003050858A1 (en) 2003-06-19
JP4651941B2 (ja) 2011-03-16
CN1695232A (zh) 2005-11-09
DE60224712T2 (de) 2009-01-29
EP1451860A1 (en) 2004-09-01
TW200301549A (en) 2003-07-01
DE60224712D1 (de) 2008-03-06
AU2002357140A1 (en) 2003-06-23
JP2005513764A (ja) 2005-05-12
KR20040064302A (ko) 2004-07-16
TWI270961B (en) 2007-01-11
US6756255B1 (en) 2004-06-29

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