KR100952672B1 - Apparatus and method for treating substrate - Google Patents

Abstract

The present invention relates to an apparatus and method for processing a substrate. The present invention includes a wet cleaning unit for cleaning a substrate by spraying a processing fluid on the substrate, a plasma processing unit for performing a plasma processing process on the substrate moved to the wet cleaning unit, and linearly moving the substrate from the plasma generating unit to the wet cleaning unit. Has a transfer unit. The present invention can efficiently handle the dry etching process and the wet cleaning process in one apparatus.

Semiconductor, dry, wet, etch, clean, plasma,

Description

Substrate processing apparatus and method {APPARATUS AND METHOD FOR TREATING SUBSTRATE}

The present invention relates to an apparatus and method for processing a substrate, and more particularly, to an apparatus for processing a semiconductor substrate in a dry and wet manner, and a substrate processing method of the apparatus.

In order to manufacture substrates such as a wafer for semiconductor integrated circuit chip manufacturing and a glass substrate for flat panel display manufacturing, a dry etching apparatus for generating a plasma to remove an unnecessary photoresist film on a wafer is widely used.

The wafer subjected to the dry etching process is subjected to a cleaning process to remove foreign substances remaining on the wafer surface as a subsequent process. In general, when the dry etching process is completed, the wafer is moved from the dry etching apparatus to the cleaning apparatus. This wafer movement increases the time required for the entire process. In addition, since the dry etching apparatus and the cleaning apparatus are respectively provided at separate positions, the total occupied area of the facility is large.

The present invention provides a substrate processing apparatus and method for improving the efficiency of a dry etching process and a wet cleaning process.

The present invention provides a substrate processing apparatus and method which can collectively perform a wet treatment process and a dry treatment process in one apparatus.

The present invention provides a substrate processing apparatus and method for shortening the time of a substrate processing process to improve the substrate throughput of the apparatus.

A substrate processing apparatus according to the present invention includes a wet cleaning unit for cleaning a substrate by spraying a processing fluid on the substrate, a plasma processing unit for performing a plasma processing process on a substrate which is installed and moved on one side in a side of the wet cleaning unit; And a transfer unit for linearly moving the substrate from the plasma processing unit to the wet cleaning unit.

According to an embodiment of the present invention, the substrate processing apparatus further includes a base having a bottom wall and sidewalls perpendicular to the bottom wall, the wet cleaning unit is installed on the bottom wall, and the plasma processing unit is the It is installed on the side wall.

According to an embodiment of the present invention, the plasma processing unit is disposed at a higher position than the wet cleaning unit.

According to an embodiment of the present invention, the plasma processing unit includes a plasma supply module for supplying a plasma on a moving path of a substrate and a vertical guide installed vertically on the side wall to guide the vertical movement of the plasma supply module. The transfer unit includes a blade for mounting a substrate and a horizontal guide installed horizontally on the side wall at a position lower than the horizontal guide to guide the horizontal movement of the blade.

According to an embodiment of the present invention, the plasma supply module includes a supply member supplying plasma to a substrate, a suction member provided on one side of the supply member to suck reaction by-products and residual gas generated during the process from the substrate, and the It is provided on the other side of the supply member includes a heating member for heating the substrate before the plasma processing process is performed.

According to an embodiment of the present invention, the suction member is disposed closer to the supply member based on the wet cleaning unit.

According to an embodiment of the present invention, the plasma supply module has a rod shape that is equal to or longer than the length of the diameter of the substrate.

According to an embodiment of the invention, the heating member is disposed farther than the supply member on the basis of the wet cleaning unit.

According to an embodiment of the present invention, the wet cleaning unit sprays the processing fluid onto the spin chuck on which the substrate moved along the movement path is placed and the processing surface of the wafer placed on the spin chuck after the plasma processing process is performed. A spray nozzle is included.

The substrate treating method according to the present invention performs a plasma treatment process on a substrate while transferring the substrate to the wet cleaning unit, and then cleans the substrate in the wet cleaning unit.

According to an embodiment of the present invention, the substrate is linearly moved in a horizontal state while the plasma processing process is performed.

According to an embodiment of the present invention, the plasma treatment process includes heating a substrate before the plasma treatment is performed, supplying plasma to the heated substrate, and reacting byproducts and residual gas generated during the process from the substrate. Inhaling.

According to an embodiment of the present invention, the cleaning of the substrate includes placing the substrate on the movement path on the spin chuck in a horizontal state and spraying the processing fluid onto the processing surface of the substrate placed on the spin chuck.

The substrate processing apparatus and method according to the present invention efficiently perform the dry etching process and the wet cleaning process in one apparatus.

The substrate processing apparatus and method according to the present invention shorten the transfer time of the substrate to improve the substrate throughput of the apparatus.

The substrate processing apparatus and method according to the present invention can reduce the occupied area of the apparatus.

Hereinafter, with reference to the accompanying drawings will be described in detail a substrate processing apparatus and method according to an embodiment of the present invention. Embodiment of the present invention may be modified in various forms, the scope of the present invention is not limited to the embodiments described below. This embodiment is provided to more fully explain the present invention to those skilled in the art, that is, to those skilled in the art. Accordingly, the shape of elements in the figures is exaggerated to emphasize clear explanation.

In the embodiment of the present invention, an apparatus for generating an plasma to remove an unnecessary photoresist film on a semiconductor substrate will be described as an example. However, the present invention may be applicable to any apparatus for processing a substrate.

1 is a perspective view showing a substrate processing apparatus according to the present invention, Figure 2 is a side view showing the internal configuration of the substrate processing apparatus shown in FIG.

Referring to FIG. 1, an apparatus for treating substrate 10 according to the present invention performs a process of processing a semiconductor substrate (hereinafter, referred to as a “wafer”) W. FIG. The substrate processing apparatus 10 includes a base having a bottom wall 12 and sidewalls 14, a plasma treating unit 100, a wet cleaning unit 200, and a transfer. Has a transfer unit 300.

The cleaning unit 200 is installed on the bottom wall 12, and the plasma processing unit 100 and the transfer unit 300 are installed on the side wall 14 perpendicular to the bottom wall 12. The plasma processing unit 100 is disposed at a position higher than that of the wet cleaning unit 200. In addition, the plasma processing unit 100 and the wet cleaning unit 200 are disposed so as not to face up and down. The plasma processing unit 100 is located above one side of the wet cleaning unit 200. For example, the plasma processing unit 100 is installed on the side wall 14 provided in the lateral direction of the wet cleaning unit 200 with respect to the wet cleaning unit 200. The transfer unit 300 linearly moves the wafer W in a horizontal state between the plasma processing unit 100 and the wet cleaning unit 200.

The plasma processing unit 100 generates plasma to etch the photoresist film on the surface of the wafer (W). When the plasma processing unit 100 passes under the wafer W plasma processing unit 100 in a state where the wafer W is placed on the blade 310 to be described later, the plasma processing unit 100 supplies plasma to the wafer W to perform plasma processing. To perform. The plasma processing unit 100 has a plasma supply module 102 and an elevator 140. The plasma supply module 102 has a generally long bar shape. The plasma supply module 102 has a supply member 110, a suction member 120, and a heating member 130.

The supply member 110 supplies plasma to the processing surface of the wafer W during the plasma processing process. The supply member 110 has at least one electrode (not shown) and a reaction gas supply line 112 for supplying a reaction gas. The electrode is installed inside the supply member 110. The reaction gas supply line 112 supplies the reaction gas to the supply member 110. During the process, the reaction gas supplied to the supply member 110 is activated in a plasma state by the electrode 112 and then supplied onto the wafer W.

The suction member 120 sucks reaction by-products and residual gas generated during the plasma treatment process. The suction member 120 is disposed adjacent to one side 111a of the supply member 110. The suction line 122 is connected to the suction member 120. The suction line 122 sucks the reaction by-products and residual gas and discharges them to the outside of the apparatus 1.

The heating member 130 heats the surface of the wafer W to a predetermined temperature during the plasma treatment process. The heating member 130 is disposed adjacent to the other side 111b of the supply member 110.

Here, the suction member 120 is disposed closer to the wet cleaning unit 200 than the supply member 110, and the heating member 130 is disposed farther from the wet cleaning unit 200 than the supply member 110. And, the heating member 130 is located on one side of the supply member 110 along the longitudinal direction of the horizontal guide 324, the suction member 120 is opposite to the heating member 130 the other side of the supply member 110 Located in

The elevator 140 lifts and lowers the plasma supply module 102 up and down. The elevator 140 has a vertical guide 142 and the lifting shaft 144. The vertical guide 142 is generally vertically disposed on the side wall 14 to guide the vertical movement of the lifting shaft 114. One end of the lifting shaft 144 is connected to the plasma supply module 102, and the other end of the lifting shaft 144 is connected to the vertical guide 142. The lifting shaft 144 is moved up and down along the guide groove 142a formed in the vertical guide 142. Here, the elevator 140 moves the plasma supply module 102 between the process position (a) and the standby position (b). Process position (a) is the position of the plasma supply module 102 for the plasma supply module 102 to supply the plasma on the wafer (W), the standby position (b) is the plasma supply module 102 is the process position ( The position of the plasma supply module 102 to wait before moving to a).

The wet cleaning unit 200 performs a process of removing foreign substances on the surface of the wafer (W). For example, the wet cleaning unit 200 performs a process of removing the reaction by-products and other foreign matter on the wafer (W). The wet cleaning unit 200 has a bowl 210, a spin chuck 220, and an injection nozzle 230.

The container 210 provides a space therein for performing a cleaning process. The container 210 has a cup shape with an open top. The open top 212 of the vessel 210 serves as a passage for the wafer W to move into the space in the vessel 210 during the process.

The spin chuck 220 supports and rotates the wafer W in the container 210 during the cleaning process. The spin chuck 220 has a spin head 222, a rotation shaft 224, and a driver 226. Spinhead 222 has a generally cylindrical shape. The rotating shaft 224 is installed to vertically penetrate the lower wall of the housing 210. The upper end of the rotation shaft 224 is connected to the lower portion of the spin head 222, and the lower end of the rotation shaft 224 is connected to the driver 226. Therefore, when the driver 226 rotates the rotation shaft 224, the wafer W placed on the spin head 222 during the cleaning process is rotated at a predetermined rotation speed.

The injection nozzle 230 injects a processing fluid to the processing surface of the wafer W placed on the spin chuck 220 during the cleaning process. The injection nozzle 230 has a first nozzle 232 and a second nozzle 234. The first nozzle 232 injects the cleaning liquid, and the second nozzle 234 injects the dry gas. The cleaning liquid is a processing liquid for removing unnecessary photoresist film and other foreign matter on the surface of the wafer W, and the drying gas is a gas for drying the wafer W. Various kinds of acidic or alkaline chemical liquids or ultrapure water may be used as the cleaning liquid, and isopropyl alcohol gas (IPA) or nitrogen gas (N 2 gas) may be used as the drying gas.

The transfer unit 300 transfers the wafer W between the plasma generating unit 100 and the wet cleaning unit 200. At this time, the transfer unit 300 moves the wafer W in a horizontal state between the plasma generating unit 100 and the wet cleaning unit 200. The transfer unit 300 has a blade 310 and a blade driving part 320.

The blade 310 supports the wafer (W). The blade 310 has an upper surface 312 on which the wafer W is placed. Support pins (not shown) for supporting the wafer W placed on the blade 310 may be installed on the upper surface 312 of the blade 310.

The blade driver 320 drives the blade 310. The blade driver 320 includes a moving shaft 322 and a horizontal guide 324. One end of the moving shaft 322 is coupled to the blade 310. The horizontal guide 324 is installed substantially horizontally on the side wall 14. The horizontal guide 324 is located at a height between the position where the wet cleaning unit 200 is provided and the position where the plasma processing unit 100 is provided. In this case, the horizontal guide 324 is installed at a position lower than the vertical guide 142. The moving shaft 322 is moved in the first direction X1 and the second direction X2 along the guide groove 324a formed in the horizontal guide 324. During the process, the horizontal guide 324 linearly moves the blade 310 in the first direction X1 so that the wafer W placed on the blade 310 is sequentially moved from the plasma processing unit 100 to the cleaning unit 200. To be moved.

Here, the blade driver 320 moves the blade 310 between the first to third positions (c, d, e) during the process. The first position (c) is a position for the robot arm (not shown) provided outside the apparatus 10 to load / unload the wafer W to / from the blade 310. The second position d is a position of the blade 310 for performing a plasma processing process on the wafer W placed on the blade 310. The third position e is a position for loading the wafer W, on which the plasma processing process is performed, onto the spin head 222.

Hereinafter, a process of the substrate processing apparatus 10 according to the present invention will be described in detail with reference to FIG. 3. 3 is a flowchart showing a substrate processing method according to the present invention. 4A to 4D are diagrams for describing a process of the substrate processing apparatus according to the present invention.

When the substrate treating process is started, the wafer W is seated on the blade 310 (S110). That is, referring to FIG. 4A, the blade driver 320 positions the blade 310 at the first position c. In addition, a robot arm (not shown) provided outside the apparatus 10 seats the wafer W on the upper surface 312 of the blade 310 located at the first position (c).

When the wafer W is placed on the blade 310, a plasma processing process is performed (S120). That is, referring to FIG. 4B, the elevator 140 lowers the plasma supply module 102 from the standby position b to the supply position a. In addition, the blade driver 320 moves the blade 310 in the first direction X1. The blade 310 transfers the wafer W along a horizontal guide 324 provided horizontally at a height between a position where the plasma processing unit 100 is provided and a position where the wet cleaning unit 200 is provided.

In the process of moving the wafer W in the first direction X1 by the blade 310, the plasma supply module 102 performs a plasma treatment process on the wafer W. That is, when the plasma supply module 102 is located at the supply position (a), the supply member 110 generates the plasma and then supplies the generated plasma on the movement path of the wafer (W). The heater 130 heats the wafer W placed on the blade 310. Therefore, the wafer W moved in the first direction X1 by the blade 310 is first heated to a predetermined temperature by the heater 130, and the wafer W is supplied by the plasma supplied by the supply member 110. The photosensitive liquid film on) is removed. At this time, the plasma from which the photoresist film is removed is sucked from the wafer W by the suction member 120 and then discharged to the outside of the apparatus 10.

When the plasma processing process is completed, the cleaning process of the wafer W is performed (S130). That is, referring to FIGS. 4C and 4D, the blade 310 moved in the first direction X1 by the blade driver 320 is positioned at the third position e. When the blade 310 is positioned at the third position (e), the blade 310 seats the wafer W on the spin head 222 of the wet cleaning unit 200. When the blade 310 seats the wafer W on the spin head 222, the blade driver 320 further moves the blade 310 in the first direction X1 to deviate from the top of the cleaning unit 200. . In addition, the spin chuck 220 positions the wafer W seated on the spin head 222 in the container 210, and the blade driver 320 moves the blade 320 in the second direction X2. Move to the first position (a).

When the wafer W is placed on the spin head 222, the driver 226 drives the spin head 222 to position the wafer W inside the container 210, and then rotates the wafer W in a predetermined rotation. Rotate at speed The first nozzle 232 sprays the cleaning liquid toward the wafer W to be rotated. The sprayed cleaning liquid removes foreign substances remaining on the wafer W surface. When the cleaning process of the wafer W is completed, the second nozzle 234 injects dry gas toward the wafer W. The injected dry gas dries the wafer (W).

When the cleaning process of the wafer W is completed, the wafer W is unloaded from the wet cleaning unit 200 and then transported to a facility where a subsequent process is performed (S140). In other words, when the cleaning process is completed, the driver 226 raises the spin head 222 to transfer the wafer W placed on the spin head 222 to the container 210 through the open upper portion 212 of the container 210. Expose to the outside. Then, a robot arm (not shown) installed outside of the apparatus 10 unloads the wafer W from the spin head 222 and transfers it to a facility where a subsequent process is performed. Alternatively, as another embodiment, the unloading of the wafer W may be performed by the blade 310.

In the present embodiment, the plasma supply process is performed by supplying plasma on the movement path of the wafer W while the plasma supply module 102 is stopped, and passing the wafer W through the movement path through which the plasma is supplied. Although the case has been described as an example, a method of performing a plasma treatment process may be variously applied. For example, as another embodiment of the present invention, while the wafer W is stopped, the plasma supply module 102 scans the processing surface of the wafer W from one side of the wafer W to the other side. The plasma treatment process may be performed while moving in the same manner.

In addition, in the present embodiment, the transfer unit 300 moves the blade 310 in the first or second directions X1 and X2 so that the wafer W is placed on the spin head 222 of the wet cleaning unit 200. Although the loading case has been described as an example, the loading of the wafer W of the blade 310 may be performed in various ways. For example, the blade 310 may be installed to be movable in a direction perpendicular to the first and second directions X1 and X2 to load the wafer W on the spin chuck 220.

In addition, in the present embodiment, the blade 310 loads the wafer W on the spin chuck 220, and a separate robot arm (not shown) unloads the wafer W from the spin chuck 220. For example, the wafer W unloading from the spin chuck 220 may be performed by the blade 310.

As described above, the substrate processing apparatus and method according to the present invention can perform a dry etching process and a wet cleaning process in one apparatus, thereby shortening the transfer time of the substrate, improving the substrate throughput of the apparatus, and occupying the apparatus. The area can be reduced.

The foregoing detailed description illustrates the present invention. It is also to be understood that the foregoing is illustrative and explanatory of preferred embodiments of the invention only, and that the invention may be used in various other combinations, modifications and environments. That is, changes or modifications may be made within the scope of the concept of the invention disclosed in this specification, the scope equivalent to the disclosed contents, and / or the skill or knowledge in the art. The foregoing embodiments are intended to illustrate the best mode contemplated for carrying out the invention and are not intended to limit the scope of the present invention to other modes of operation known in the art for utilizing other inventions such as the present invention, Various changes are possible. Accordingly, the detailed description of the invention is not intended to limit the invention to the disclosed embodiments. Also, the appended claims should be construed to include other embodiments.

1 is a perspective view showing a substrate processing apparatus according to the present invention.

FIG. 2 is a side view illustrating internal configurations of the substrate processing apparatus shown in FIG. 1.

3 is a flowchart showing a substrate processing method according to the present invention.

4A to 4D are views for explaining a process of the substrate processing apparatus according to the present invention.

Description of the Related Art [0002]

10: substrate processing apparatus

100: plasma processing unit

110: supply member

120: suction member

130: heating member

200: wet cleaning unit

210: container

220: spin chuck

230: injection nozzle

300: transfer unit

310: Blade

320: blade drive unit

Claims (14)

A wet cleaning unit for cleaning the substrate by spraying a processing fluid on the substrate; A plasma processing unit positioned on one side of the wet cleaning unit and performing a plasma processing process on a substrate; And It includes a transfer unit for transferring the substrate from the plasma processing unit to the wet cleaning unit, The transfer unit A blade for transporting the substrate; And And a horizontal guide positioned at a height between a position at which the wet cleaning unit is provided and a position at which the plasma processing unit is provided, to guide a linear movement of the blade. A wet cleaning unit for cleaning the substrate by spraying a processing fluid on the substrate; A plasma processing unit installed at one side in the lateral direction of the wet cleaning unit and performing a plasma processing process on a substrate; A transfer unit for linearly moving the substrate from the plasma processing unit to the wet cleaning unit, and A base having a bottom wall and sidewalls perpendicular to the bottom wall, The wet cleaning unit is installed on the bottom wall, The plasma processing unit is installed on the side wall. The method of claim 2, The plasma processing unit, Substrate processing apparatus, characterized in that disposed in a position higher than the wet cleaning unit. The method according to claim 2 or 3, The plasma processing unit, A plasma supply module supplying plasma on a movement path of the substrate; A vertical guide installed vertically on the side wall to guide the vertical movement of the plasma supply module; The transfer unit, A blade for seating the substrate, And a horizontal guide installed horizontally on the sidewall at a position lower than the vertical guide to guide horizontal movement of the blade. The method of claim 4, wherein The plasma supply module, A supply member supplying plasma to the substrate, A suction member provided on one side of the supply member to suck reaction by-products and residual gas generated during the process from the substrate, and And a heating member provided on the other side of the supply member to heat the substrate before the plasma processing process is performed. The method of claim 5, The suction member, The substrate processing apparatus of claim 1, wherein the substrate is disposed closer to the supply member based on the wet cleaning unit. The method of claim 5, The plasma supply module, A substrate processing apparatus characterized by having a rod shape that is equal to or longer than the length of the diameter of the substrate. The method of claim 5, The heating member, Substrate processing apparatus, characterized in that disposed on the wet cleaning unit farther than the supply member. The method according to any one of claims 1 to 3, The wet cleaning unit, A spin chuck on which the substrate transferred by the transfer unit is placed after the plasma treatment process is performed; And an injection nozzle for injecting a processing fluid into the processing surface of the wafer placed on the spin chuck. The blade transfers the substrate along a horizontal guide provided horizontally at a height between the position where the plasma processing unit is provided and the position where the wet cleaning unit is provided. When the substrate passes under the plasma processing unit while the substrate is placed on the blade, plasma is supplied from the plasma processing unit to the substrate to perform plasma processing. And cleaning the substrate by mounting the substrate on the wet cleaning unit. delete The method of claim 10, The plasma process treatment, Heating the substrate before the plasma treatment is performed; Supplying a plasma to the heated substrate, and A substrate processing method comprising the step of sucking the reaction by-products and residual gas generated during the process from the substrate. The method of claim 10 or 12, The cleaning of the substrate, Mounting the substrate transferred to the upper portion of the wet cleaning unit on a spin chuck in a horizontal state; And spraying a processing fluid onto the processing surface of the substrate placed on the spin chuck. The method of claim 1, The plasma processing unit A supply member supplying plasma to the substrate; A heating member positioned on one side of the supply member along a longitudinal direction of the horizontal guide and heating the substrate to be transferred; And a suction member positioned on the other side of the supply member opposite to the heating member and sucking the reaction by-products and residual gas generated in the plasma processing process.

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