WO2018026251A1 - Method and apparatus for cleaning semiconductor wafer - Google Patents

Method and apparatus for cleaning semiconductor wafer Download PDF

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Publication number
WO2018026251A1
WO2018026251A1 PCT/KR2017/008515 KR2017008515W WO2018026251A1 WO 2018026251 A1 WO2018026251 A1 WO 2018026251A1 KR 2017008515 W KR2017008515 W KR 2017008515W WO 2018026251 A1 WO2018026251 A1 WO 2018026251A1
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wafer
cleaning
semiconductor
pedestal
semiconductor wafer
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PCT/KR2017/008515
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French (fr)
Korean (ko)
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이길광
윤용혁
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무진전자 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02054—Cleaning before device manufacture, i.e. Begin-Of-Line process combining dry and wet cleaning steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation

Definitions

  • the present disclosure relates generally to a semiconductor wafer cleaning method and apparatus, and more particularly, to a semiconductor wafer cleaning method including both a dry cleaning method and a wet cleaning method, and a semiconductor wafer including both a dry cleaning module and a wet cleaning module. It relates to a cleaning method and apparatus.
  • a semiconductor device is manufactured by performing a plurality of unit processes such as diffusion, deposition, exposure, cleaning, etc., sequentially or repeatedly on a wafer. Recently, as the semiconductor pattern density is increased, the importance of the semiconductor cleaning process is increasing.
  • the semiconductor cleaning process is classified into a dry cleaning method and a wet cleaning method, but a wet cleaning method is mainly used.
  • FIG. 1 is a view showing an example of a wet cleaning device described in Korean Laid-Open Patent Publication No. 10-2008-0060935. For convenience of description, reference numerals have been changed.
  • the wet cleaning apparatus 10 of FIG. 1 includes a cleaning tank 11, a wafer guide 12, a motor rotating shaft 13, and a motor 14.
  • the wafer 15 cleaned by the wet cleaning apparatus 10 is fixed to the wafer guide 12 by the fixing portions 16 and 17.
  • the wafer 15 is cleaned by a chemical solution in the cleaning tank 11.
  • the chemical solution used for the wet cleaning apparatus 10 uses various chemical solutions depending on the use. For example, in sulfuric acid peroxide mixture (SPM), sulfuric acid (H 2 SO 4 ) and hydrogen peroxide (H 2 O 2 ) are mixed and used in an appropriate ratio.
  • FIG. 2 is a view showing an example of a dry cleaning apparatus described in Korean Laid-Open Patent Publication No. 10-2003-0049086. For convenience of description, reference numerals have been changed.
  • the dry cleaning apparatus 20 shown in FIG. 2 includes a carrier gas introducing unit 21, a plasma generating unit 22, a reactive gas introducing unit 23, a charged particle blocking unit 24, a wafer support unit 25, and a processing lamp unit ( 26). Also shown is the wafer 27 being cleaned.
  • the present disclosure is to provide a semiconductor wafer cleaning method and apparatus using a wet cleaning method using ozone water.
  • a method of cleaning a semiconductor wafer comprising: preparing a wafer; And dry cleaning the wafer; and wet cleaning the wafer.
  • a method for cleaning a semiconductor wafer wherein the wafer is heated.
  • a semiconductor wafer cleaning apparatus comprising: a dry cleaning module; And a wet cleaning module positioned below the dry cleaning module.
  • FIG. 1 is a view showing an example of a wet cleaning device described in Korean Patent Laid-Open No. 10-2008-0060935,
  • FIG. 2 is a view showing an example of a dry cleaning apparatus described in Korean Laid-Open Patent Publication No. 10-2003-0049086;
  • FIG. 3 is a view illustrating an example of a semiconductor wafer cleaning method according to the present disclosure
  • FIG. 4 is a view briefly showing an example of a semiconductor wafer cleaning apparatus according to the present disclosure.
  • FIG. 3 is a diagram illustrating an example of a semiconductor wafer cleaning method according to the present disclosure.
  • FIG. 3 shows a method of cleaning the semiconductor wafer 200.
  • the wafer 200 is prepared as shown in FIG. 3 (a).
  • the wafer 200 is of a certain shape, but is not limited to a certain size.
  • the wafer 200 is placed in the dry cleaning module 110 to dry clean the wafer.
  • the dry cleaning module 110 ashes the photoresist using a plasma 111 using at least one of oxygen (O 2 ), nitrogen (N 2 ), argon (Ar), and carbon tetrafluoride (CF 4 ). characterized by ashing).
  • the wafer 200 subjected to the process of FIG. 3 (b) is inserted into the wet cleaning module 120 as shown in FIG. 3 (c) to wet clean the wafer 200.
  • the wet cleaning module 120 may use ozone water 121 (O 3 ).
  • the concentration of ozone water 121 is preferably 30 ppm or more and 200 ppm or less. Because, the concentration of ozone water 121 The best cleaning between 30ppm ⁇ 200ppm, and less than 30ppm, the concentration of ozone water 121 is low, the washing is not good, the flow rate of ozone water 121 produced by the ozone water generator is not enough at 200ppm or more wafer 200 This is because the washing is not good.
  • the temperature of ozone water 121 is between 25 degreeC-80 degreeC. This is because the reactivity is lowered at 25 ° C. or lower, and the detergency is lowered.
  • the wet cleaning module 120 has an advantage of significantly reducing environmental pollution due to the use of a chemical solution by using the ozone water 121 for wet cleaning.
  • ozone water 121 has a lower cleaning capacity than other chemical products. Therefore, when wet cleaning only with ozone water 121, there is a problem that the cleaning of the wafer 200 is difficult.
  • the wet cleaning module 120 includes a pedestal 122 supporting the wafer 200, and the pedestal 122 is provided with a semiconductor light emitting device 123. Like the pedestal 122 of FIG.
  • the semiconductor light emitting device 123 is provided in the groove of the pedestal 122, and when the semiconductor light emitting device 123 is cleaned, the semiconductor light emitting device 123 may be sealed so as not to contact the ozone water 121. have.
  • the semiconductor light emitting device 123 provided in the pedestal 122 emits near ultraviolet light to the wafer 200.
  • the wafer 200 may pass light having a wavelength longer than that of near ultraviolet light, and thus, the wafer 200 may not be sufficiently heated. For example, when infrared rays are shot, infrared rays do not generate heat through the wafer 200, and when near ultraviolet rays are used, near ultraviolet rays do not pass through the wafer 200, and heat is generated in the wafer 200.
  • the semiconductor light emitting element 123 preferably emits near ultraviolet rays.
  • the wafer 200 is preferably heated to between 25 ° C and 250 ° C. This is because the wafer 200 is activated while the wafer 200 is heated, thereby increasing the insufficient cleaning power of the ozone water 121.
  • the wafer 200 is first warmed by near ultraviolet rays, and then washed with ozone water 121.
  • the heating of the wafer 200 in the state submerged in the ozone water 121 takes a long time for the wafer 200 to be heated, and the temperature of the morning water 121 may be unexpectedly increased.
  • the ozone water 121 may be sprayed from above as shown in FIG. 3 (c), and the wafer 200 and the pedestal 122 may be cleaned together in the container containing the ozone water 121.
  • the semiconductor wafer cleaning apparatus 100 includes a dry cleaning module 110 and a wet cleaning module 120.
  • the wet cleaning module 120 is positioned below the dry cleaning module 110. As the wet cleaning module 120 is positioned below the dry cleaning module 110, the moving distance of the wafer may be shortened, and the size of the horizontal space occupied by the photoresist cleaning device 100 may be greatly reduced.
  • the dry clean module 110 cleans the wafer, and the wet clean module 120 cleans the wafer.
  • a semiconductor wafer cleaning method comprising the steps of: preparing a wafer; And dry cleaning the wafer; and wet cleaning the wafer, wherein the wafer is heated.
  • the semiconductor light emitting element heats the wafer between 25 ° C and 250 ° C.
  • a semiconductor wafer cleaning apparatus comprising: a dry cleaning module; And a wet cleaning module located under the dry cleaning module.
  • a semiconductor wafer cleaning apparatus characterized by using ozone water in a wet cleaning module.
  • the wet cleaning module includes a pedestal for supporting the wafer, wherein the pedestal is provided with a semiconductor light emitting element.
  • a semiconductor wafer cleaning apparatus wherein the semiconductor light emitting element provided in the pedestal emits near ultraviolet light.
  • a semiconductor wafer cleaning apparatus wherein the semiconductor light emitting element provided in the pedestal heats the wafer between 25 ° C and 250 ° C.
  • the wafer of the wet cleaning module is positioned on the pedestal, the pedestal is provided with a semiconductor light emitting device, and the semiconductor light emitting device provided in the pedestal emits near ultraviolet light. Wafer cleaning apparatus.
  • a semiconductor wafer cleaning method and apparatus for effectively cleaning a wafer are provided.

Abstract

The present disclosure relates to a method for cleaning a semiconductor wafer, comprising the steps of: preparing a wafer; dry-cleaning the wafer; and wet-cleaning the wafer, wherein the wafer is heated during the step of wet-cleaning the wafer.

Description

반도체 웨이퍼 세정 방법 및 장치Semiconductor Wafer Cleaning Method and Apparatus
본 개시(Disclosure)는 전체적으로 반도체 웨이퍼 세정 방법 및 장치에 관한 것으로, 특히 건식 세정 방법과 습식 세정 방법을 모두 포함하고 있는 반도체 웨이퍼 세정 방법과, 건식 세정 모듈과 습식 세정 모듈을 모두 포함하고 있는 반도체 웨이퍼 세정 방법 및 장치에 관한 것이다.The present disclosure relates generally to a semiconductor wafer cleaning method and apparatus, and more particularly, to a semiconductor wafer cleaning method including both a dry cleaning method and a wet cleaning method, and a semiconductor wafer including both a dry cleaning module and a wet cleaning module. It relates to a cleaning method and apparatus.
여기서는, 본 개시에 관한 배경기술이 제공되며, 이들이 반드시 공지기술을 의미하는 것은 아니다(This section provides background information related to the present disclosure which is not necessarily prior art).This section provides background information related to the present disclosure which is not necessarily prior art.
일반적으로 반도체 소자는 웨이퍼 상에 확산, 증착, 노광, 세정 등과 같은 다수의 단위 공정들이 순차적 또는 반복적으로 행하여짐으로써 제조된다. 최근에는 반도체 패턴 밀도가 증가됨에 따라 반도체 세정 공정에 대한 중요성이 증가하고 있다. 반도체 세정 공정은 건식 세정 방식과 습식 세정 방식으로 구분되나, 주로 습식 세정 방식이 사용되고 있다.Generally, a semiconductor device is manufactured by performing a plurality of unit processes such as diffusion, deposition, exposure, cleaning, etc., sequentially or repeatedly on a wafer. Recently, as the semiconductor pattern density is increased, the importance of the semiconductor cleaning process is increasing. The semiconductor cleaning process is classified into a dry cleaning method and a wet cleaning method, but a wet cleaning method is mainly used.
도 1은 한국 공개특허공보 제10-2008-0060935호에 기재된 습식 세정 장치의 일 예를 보여주는 도면이다. 설명의 편의를 위해 도면 부호를 변경하였다.1 is a view showing an example of a wet cleaning device described in Korean Laid-Open Patent Publication No. 10-2008-0060935. For convenience of description, reference numerals have been changed.
도 1의 습식 세정 장치(10)는 세정조(11), 웨이퍼 가이드(12), 모터 회전축(13) 및 모터(14)를 포함하고 있다. 습식 세정 장치(10)에 의해 세정되는 웨이퍼(15)는 웨이퍼 가이드(12)에 고정부(16, 17)에 의해 고정된다. 웨이퍼(15)는 세정조(11)에 있는 화학 용액에 의해 세정된다. 습식 세정 장치(10)에 사용되는 화학 용액은 용도에 따라 다양한 화학 용액을 사용한다. 예를 들어 SPM(Surfuric acid peroxide mixture)에서는 황산(H2SO4)와 과산화수소(H2O2)를 적정비율로 혼합하여 사용한다.The wet cleaning apparatus 10 of FIG. 1 includes a cleaning tank 11, a wafer guide 12, a motor rotating shaft 13, and a motor 14. The wafer 15 cleaned by the wet cleaning apparatus 10 is fixed to the wafer guide 12 by the fixing portions 16 and 17. The wafer 15 is cleaned by a chemical solution in the cleaning tank 11. The chemical solution used for the wet cleaning apparatus 10 uses various chemical solutions depending on the use. For example, in sulfuric acid peroxide mixture (SPM), sulfuric acid (H 2 SO 4 ) and hydrogen peroxide (H 2 O 2 ) are mixed and used in an appropriate ratio.
그러나 습식 세정 방식의 경우 사용되는 화학 용액으로 인한 환경오염문제, 장치의 거대화 및 유지비의 상승 등에 의한 문제가 있었다. 이에 최근에는 건식 세정 방식에 대한 관심이 높아지고 있다.However, in the case of the wet cleaning method, there was a problem due to environmental pollution due to the chemical solution used, the size of the device and the increase in maintenance costs. Recently, the interest in the dry cleaning method is increasing.
도 2는 한국 공개특허공보 제10-2003-0049086호에 기재된 건식 세정 장치의 일 예를 보여주는 도면이다. 설명의 편의를 위해 도면 부호를 변경하였다.2 is a view showing an example of a dry cleaning apparatus described in Korean Laid-Open Patent Publication No. 10-2003-0049086. For convenience of description, reference numerals have been changed.
도 2에 기재된 건식 세정 장치(20)는 캐리어 가스 도입부(21), 플라즈마 발생부(22), 반응 가스 도입부(23), 하전입자 차단부(24), 웨이퍼 지지부(25) 및 처리 램프부(26)를 포함하고 있는 것을 보여주고 있다. 세정 되는 웨이퍼(27)도 도시되어 있다.The dry cleaning apparatus 20 shown in FIG. 2 includes a carrier gas introducing unit 21, a plasma generating unit 22, a reactive gas introducing unit 23, a charged particle blocking unit 24, a wafer support unit 25, and a processing lamp unit ( 26). Also shown is the wafer 27 being cleaned.
그러나 건식 세정 방식의 경우 웨이퍼 세정에 한계를 보여주고 있다. 이에 최근에는 건식 세정 방식의 세정의 한계를 극복하고, 습식 세정 방식의 문제를 해결하고자 오존수를 사용하는 습식 세정 방식에 대한 관심이 높아지고 있다.  However, dry cleaning has shown a limitation in wafer cleaning. Recently, in order to overcome the limitations of the dry cleaning method and to solve the problem of the wet cleaning method, an interest in the wet cleaning method using ozone water has increased.
또한 도 1 및 도 2에 도시된 건식 세정 장치와 습식 세정 장치를 각각 별도로 설치함에 따라, 세정 장치를 설치하는 공간이 많이 필요한 문제점이 있었다.In addition, as the dry cleaning device and the wet cleaning device shown in FIG.
본 개시는 오존수를 사용하는 습식 세정 방식을 사용한 반도체 웨이퍼 세정 방법 및 장치를 제공하고자 한다. 또한, 세정 장치를 설치하는 공간이 적게 필요한 반도체 웨이퍼 세정 방법 및 장치를 제공하고자 한다.The present disclosure is to provide a semiconductor wafer cleaning method and apparatus using a wet cleaning method using ozone water. In addition, it is an object of the present invention to provide a semiconductor wafer cleaning method and apparatus requiring less space for installing the cleaning apparatus.
이에 대하여 '발명의 실시를 위한 구체적인 내용'의 후단에 기술한다.This is described later in the section titled 'Details of the Invention.'
여기서는, 본 개시의 전체적인 요약(Summary)이 제공되며, 이것이 본 개시의 외연을 제한하는 것으로 이해되어서는 아니된다(This section provides a general summary of the disclosure and is not a comprehensive disclosure of its full scope or all of its features).This section provides a general summary of the disclosure and is not a comprehensive disclosure of its full scope or all, provided that this is a summary of the disclosure. of its features).
본 개시에 따른 일 태양에 의하면(According to one aspect of the present disclosure), 반도체 웨이퍼 세정 방법에 있어서, 웨이퍼를 준비하는 단계; 웨이퍼를 건식 세정 하는 단계;그리고, 웨이퍼를 습식 세정 하는 단계;를 포함하며, 웨이퍼를 습식 세정 하는 단계;에서, 웨이퍼를 가열하는 것을 특징으로 하는 반도체 웨이퍼 세정방법이 제공된다.According to one aspect of the present disclosure (According to one aspect of the present disclosure), a method of cleaning a semiconductor wafer, comprising: preparing a wafer; And dry cleaning the wafer; and wet cleaning the wafer. Provided is a method for cleaning a semiconductor wafer, wherein the wafer is heated.
본 개시에 따른 다른 태양에 의하면(According to another aspect of the present disclosure),반도체 웨이퍼 세정 장치에 있어서, 건식 세정 모듈; 그리고 건식 세정 모듈 하부에 위치하는 습식 세정 모듈;을 포함하는 것을 특징으로 하는 반도체 웨이퍼 세정 장치가 제공된다.According to another aspect of the present disclosure, A semiconductor wafer cleaning apparatus comprising: a dry cleaning module; And a wet cleaning module positioned below the dry cleaning module.
이에 대하여 '발명의 실시를 위한 구체적인 내용'의 후단에 기술한다.This is described later in the section titled 'Details of the Invention.'
도 1은 한국 공개특허공보 제10-2008-0060935호에 기재된 습식 세정 장치의 일 예를 보여주는 도면,1 is a view showing an example of a wet cleaning device described in Korean Patent Laid-Open No. 10-2008-0060935,
도 2는 한국 공개특허공보 제10-2003-0049086호에 기재된 건식 세정 장치의 일 예를 보여주는 도면,2 is a view showing an example of a dry cleaning apparatus described in Korean Laid-Open Patent Publication No. 10-2003-0049086;
도 3은 본 개시에 따른 반도체 웨이퍼 세정 방법의 일 예를 보여주는 도면,3 is a view illustrating an example of a semiconductor wafer cleaning method according to the present disclosure;
도 4는 본 개시에 따른 반도체 웨이퍼 세정 장치의 일 예를 간략히 보여주는 도면.4 is a view briefly showing an example of a semiconductor wafer cleaning apparatus according to the present disclosure.
이하, 본 개시를 첨부된 도면을 참고로 하여 자세하게 설명한다(The present disclosure will now be described in detail with reference to the accompanying drawing(s)). The present disclosure will now be described in detail with reference to the accompanying drawing (s).
도 3은 본 개시에 따른 반도체 웨이퍼 세정 방법의 일 예를 보여주는 도면이다.3 is a diagram illustrating an example of a semiconductor wafer cleaning method according to the present disclosure.
도 3은 반도체 웨이퍼(200)의 세정 방법을 나타낸다. 도 3(a)와 같이 웨이퍼(200)를 준비한다. 웨이퍼(200)는 일정한 모양이나, 일정한 크기로 한정되지 않는다. 도 3(b)와 같이 웨이퍼(200)를 건식 세정 모듈(110)에 넣어 웨이퍼를 건식 세정 한다. 건식 세정 모듈(110)은 산소(O2), 질소(N2), 아르곤(Ar), 및 사불화탄소(CF4) 중 적어도 하나의 가스를 사용한 플라즈마(111)를 이용하여 포토레지스터를 에싱(ashing)하는 것을 특징으로 한다. 이후, 도 3(c)와 같이 도 3(b)의 과정을 거친 웨이퍼(200)를 습식 세정 모듈(120)에 넣어 웨이퍼(200)를 습식 세정한다. 습식 세정 모듈(120)은 오존수(121;O3)를 사용할 수 있다. 또한, 오존수(121)의 농도는 30ppm 이상이고 200ppm 이하인 것이 바람직하다. 왜냐하면, 오존수(121)의 농도는 30ppm~200ppm사이에서 가장 세정이 잘되며, 30ppm 이하에서는 오존수(121)의 농도가 낮아서 세척이 잘되지 않고, 200ppm 이상에서는 오존수 발생장치에서 만들어지는 오존수(121)의 유량이 충분치 않아서 웨이퍼(200)의 세정이 잘되지 않기 때문이다. 오존수(121)의 온도는 25℃~80℃ 사이인 것이 바람직하다. 25℃ 이하에서 반응성이 떨어져 세정력이 떨어지며, 80℃ 이상인 경우 오존이 O2로 재결합하는 비율이 높아 세정력이 떨어지기 때문이다. 습식 세정 모듈(120)은 오존수(121)를 습식 세정에 사용함으로써, 화학 용액의 사용으로 인한 환경오염을 획기적으로 줄일 수 있는 장점이 있다. 다만, 오존수(121)는 다른 화학제품보다 세정능력이 떨어진다. 따라서, 오존수(121)로만 습식 세정하는 경우, 웨이퍼(200)의 세정이 잘 되지 않는 문제점이 있다. 이를 해결하기 위해, 습식 세정 모듈(120)은 웨이퍼(200)를 받치는 받침대(122)를 포함하며, 받침대(122)에는 반도체 발광소자(123)가 구비된다. 도 3(c)의 받침대(122)와 같이 반도체 발광소자(123)는 받침대(122)의 홈에 구비되어, 반도체 발광소자(123)가 세정할 때, 오존수(121)에 닿지 않도록 밀봉할 수 있다. 받침대(122)에 구비된 반도체 발광소자(123)는 웨이퍼(200)에 근자외선을 발광한다. 웨이퍼(200)는 근자외선 보다 파장이 긴 빛은 통과되어, 웨이퍼(200)가 충분히 가열되지 못할 수 있다. 예를 들어, 적외선을 쏘이면, 적외선은 웨이퍼(200)를 통과하여 열을 발생시키지 않고, 근자외선을 사용하면, 근자외선은 웨이퍼(200)를 통과하지 못해 웨이퍼(200)에 열이 발생한다. 그러므로, 반도체 발광소자(123)는 근자외선을 발광하는 것이 바람직하다. 웨이퍼(200)는 25℃~250℃ 사이로 가열하는 것이 바람직하다. 웨이퍼(200)가 가열되면서, 웨이퍼(200)가 활성화 되어, 오존수(121)의 부족한 세정력을 높일 수 있기 때문이다. 이때, 웨이퍼(200)는 먼저 근자외선에 의해 데워진 후, 오존수(121)로 세정되는 것이 바람직하다. 오존수(121)에 잠긴 상태에서 웨이퍼(200)를 가열하는 것은 웨이퍼(200)가 가열되는데 시간이 오래걸리고, 오전수(121)의 온도를 예기치 않게 높일 수 있기 때문이다. 이때, 오존수(121)는 도 3(c)와 같이 위에서 분사해줄 수 있고, 오존수(121)가 담긴 통에 웨이퍼(200)와 받침대(122)가 함께 들어가서 세정 될 수 있다.3 shows a method of cleaning the semiconductor wafer 200. The wafer 200 is prepared as shown in FIG. 3 (a). The wafer 200 is of a certain shape, but is not limited to a certain size. As shown in FIG. 3B, the wafer 200 is placed in the dry cleaning module 110 to dry clean the wafer. The dry cleaning module 110 ashes the photoresist using a plasma 111 using at least one of oxygen (O 2 ), nitrogen (N 2 ), argon (Ar), and carbon tetrafluoride (CF 4 ). characterized by ashing). Thereafter, the wafer 200 subjected to the process of FIG. 3 (b) is inserted into the wet cleaning module 120 as shown in FIG. 3 (c) to wet clean the wafer 200. The wet cleaning module 120 may use ozone water 121 (O 3 ). In addition, the concentration of ozone water 121 is preferably 30 ppm or more and 200 ppm or less. Because, the concentration of ozone water 121 The best cleaning between 30ppm ~ 200ppm, and less than 30ppm, the concentration of ozone water 121 is low, the washing is not good, the flow rate of ozone water 121 produced by the ozone water generator is not enough at 200ppm or more wafer 200 This is because the washing is not good. It is preferable that the temperature of ozone water 121 is between 25 degreeC-80 degreeC. This is because the reactivity is lowered at 25 ° C. or lower, and the detergency is lowered. If the temperature is 80 ° C. or higher, the ozone is recombined with O 2 . The wet cleaning module 120 has an advantage of significantly reducing environmental pollution due to the use of a chemical solution by using the ozone water 121 for wet cleaning. However, ozone water 121 has a lower cleaning capacity than other chemical products. Therefore, when wet cleaning only with ozone water 121, there is a problem that the cleaning of the wafer 200 is difficult. To solve this problem, the wet cleaning module 120 includes a pedestal 122 supporting the wafer 200, and the pedestal 122 is provided with a semiconductor light emitting device 123. Like the pedestal 122 of FIG. 3C, the semiconductor light emitting device 123 is provided in the groove of the pedestal 122, and when the semiconductor light emitting device 123 is cleaned, the semiconductor light emitting device 123 may be sealed so as not to contact the ozone water 121. have. The semiconductor light emitting device 123 provided in the pedestal 122 emits near ultraviolet light to the wafer 200. The wafer 200 may pass light having a wavelength longer than that of near ultraviolet light, and thus, the wafer 200 may not be sufficiently heated. For example, when infrared rays are shot, infrared rays do not generate heat through the wafer 200, and when near ultraviolet rays are used, near ultraviolet rays do not pass through the wafer 200, and heat is generated in the wafer 200. Therefore, the semiconductor light emitting element 123 preferably emits near ultraviolet rays. The wafer 200 is preferably heated to between 25 ° C and 250 ° C. This is because the wafer 200 is activated while the wafer 200 is heated, thereby increasing the insufficient cleaning power of the ozone water 121. At this time, the wafer 200 is first warmed by near ultraviolet rays, and then washed with ozone water 121. The heating of the wafer 200 in the state submerged in the ozone water 121 takes a long time for the wafer 200 to be heated, and the temperature of the morning water 121 may be unexpectedly increased. At this time, the ozone water 121 may be sprayed from above as shown in FIG. 3 (c), and the wafer 200 and the pedestal 122 may be cleaned together in the container containing the ozone water 121.
도 4는 본 개시에 따른 반도체 웨이퍼 세정 장치의 일 예를 간략히 보여주는 도면이다.4 is a view briefly showing an example of a semiconductor wafer cleaning apparatus according to the present disclosure.
본 개시에 따른 반도체 웨이퍼 세정 장치(100)는 건식 세정 모듈(110)과 습식 세정 모듈(120)을 포함한다. 건식 세정 모듈(110) 하부에 습식 세정 모듈(120)이 위치한다. 습식 세정 모듈(120)이 건식 세정 모듈(110) 하부에 위치함에 따라, 웨이퍼의 이동거리가 단축되고, 포토레지스터 세정 장치(100)가 차지하는 수평 공간의 크기를 크게 줄일 수 있다. 건식 세정 모듈(110)은 웨이퍼를 세정하고, 습식 세정 모듈(120)은 웨이퍼를 세정한다. The semiconductor wafer cleaning apparatus 100 according to the present disclosure includes a dry cleaning module 110 and a wet cleaning module 120. The wet cleaning module 120 is positioned below the dry cleaning module 110. As the wet cleaning module 120 is positioned below the dry cleaning module 110, the moving distance of the wafer may be shortened, and the size of the horizontal space occupied by the photoresist cleaning device 100 may be greatly reduced. The dry clean module 110 cleans the wafer, and the wet clean module 120 cleans the wafer.
이하 본 개시의 다양한 실시 형태에 대하여 설명한다.Hereinafter, various embodiments of the present disclosure will be described.
(1) 반도체 웨이퍼 세정 방법에 있어서, 웨이퍼를 준비하는 단계; 웨이퍼를 건식 세정 하는 단계;그리고, 웨이퍼를 습식 세정 하는 단계;를 포함하며, 웨이퍼를 습식 세정 하는 단계;에서, 웨이퍼를 가열하는 것을 특징으로 하는 반도체 웨이퍼 세정방법.(1) A semiconductor wafer cleaning method comprising the steps of: preparing a wafer; And dry cleaning the wafer; and wet cleaning the wafer, wherein the wafer is heated.
(2) 웨이퍼를 습식 세정 하는 단계;에서, 웨이퍼는 받침대 위에 구비되며, 받침대에는 반도체 발광소자가 구비되어 반도체 발광소자는 웨이퍼를 가열하는 데 이용되는 것을 특징으로 하는 반도체 웨이퍼 세정방법.(2) wet cleaning the wafer; wherein the wafer is provided on a pedestal, the pedestal is provided with a semiconductor light emitting element so that the semiconductor light emitting element is used to heat the wafer.
(3) 반도체 발광소자는 근자외선을 발광하는 것을 특징으로 하는 반도체 웨이퍼 세정방법.(3) A semiconductor wafer cleaning method, wherein the semiconductor light emitting element emits near ultraviolet rays.
(4) 웨이퍼를 가열할 때, 반도체 발광소자는 웨이퍼를 25℃~250℃사이로 가열하는 것을 특징으로 하는 반도체 웨이퍼 세정방법.(4) When heating the wafer, the semiconductor light emitting element heats the wafer between 25 ° C and 250 ° C.
(5) 웨이퍼를 습식 세정 하는 단계;에서, 오존수를 사용하는 것을 특징으로 하는 반도체 웨이퍼 세정 방법.(5) Wet cleaning the wafer; in the semiconductor wafer cleaning method, using ozone water.
(6) 오존수의 농도는 30ppm 이상 200ppm 이하인 것을 특징으로 하는 반도체 웨이퍼 세정 방법.(6) A method of cleaning a semiconductor wafer, wherein the concentration of ozone water is 30 ppm or more and 200 ppm or less.
(7) 웨이퍼를 건식 세정 하는 단계;에서는 산소, 질소, 아르곤, 및 사불화탄소 중 적어도 하나를 사용하여 플라즈마를 이용하여 건식 세정하는 것을 특징으로 하는 반도체 웨이퍼 세정 방법.(7) dry cleaning the wafer, wherein the semiconductor wafer cleaning method comprises dry cleaning using plasma using at least one of oxygen, nitrogen, argon, and carbon tetrafluoride.
(8) 반도체 웨이퍼 세정 장치에 있어서, 건식 세정 모듈; 그리고 건식 세정 모듈 하부에 위치하는 습식 세정 모듈;을 포함하는 것을 특징으로 하는 반도체 웨이퍼 세정 장치.(8) A semiconductor wafer cleaning apparatus comprising: a dry cleaning module; And a wet cleaning module located under the dry cleaning module.
(9) 습식 세정 모듈에서는 오존수를 사용하는 것을 특징으로 하는 반도체 웨이퍼 세정 장치.(9) A semiconductor wafer cleaning apparatus characterized by using ozone water in a wet cleaning module.
(10) 습식 세정 모듈은 웨이퍼를 받치는 받침대를 포함하며, 받침대에는 반도체 발광소자가 구비되는 것을 특징으로 하는 반도체 웨이퍼 세정 장치.(10) The wet cleaning module includes a pedestal for supporting the wafer, wherein the pedestal is provided with a semiconductor light emitting element.
(11) 받침대에 구비된 반도체 발광소자는 근자외선을 발광하는 것을 특징으로 하는 반도체 웨이퍼 세정 장치.(11) A semiconductor wafer cleaning apparatus, wherein the semiconductor light emitting element provided in the pedestal emits near ultraviolet light.
(12) 받침대에 구비된 반도체 발광소자는 웨이퍼를 25℃~250℃ 사이로 가열하는 것을 특징으로 하는 반도체 웨이퍼 세정 장치.(12) A semiconductor wafer cleaning apparatus, wherein the semiconductor light emitting element provided in the pedestal heats the wafer between 25 ° C and 250 ° C.
(13) 습식 세정 모듈에서는 오존수를 사용하며, 습식 세정 모듈의 웨이퍼는 받침대 위에 위치하며, 받침대에는 반도체 발광소자가 구비되며, 받침대에 구비된 반도체 발광소자는 근자외선을 발광하는 것을 특징으로 하는 반도체 웨이퍼 세정 장치.(13) In the wet cleaning module, ozone water is used, the wafer of the wet cleaning module is positioned on the pedestal, the pedestal is provided with a semiconductor light emitting device, and the semiconductor light emitting device provided in the pedestal emits near ultraviolet light. Wafer cleaning apparatus.
본 개시에 의하면, 웨이퍼를 효과적으로 세정하는 반도체 웨이퍼 세정 방법 및 장치를 제공한다.According to the present disclosure, a semiconductor wafer cleaning method and apparatus for effectively cleaning a wafer are provided.

Claims (13)

  1. 반도체 웨이퍼 세정 방법에 있어서,In the semiconductor wafer cleaning method,
    웨이퍼를 준비하는 단계;Preparing a wafer;
    웨이퍼를 건식 세정 하는 단계;그리고,Dry cleaning the wafer; and,
    웨이퍼를 습식 세정 하는 단계;를 포함하며,Wet cleaning the wafer; includes,
    웨이퍼를 습식 세정 하는 단계;에서,In the step of wet cleaning the wafer;
    웨이퍼를 가열하는 것을 특징으로 하는 반도체 웨이퍼 세정방법.A semiconductor wafer cleaning method comprising heating a wafer.
  2. 청구항 1에 있어서,The method according to claim 1,
    웨이퍼를 습식 세정 하는 단계;에서,In the step of wet cleaning the wafer;
    웨이퍼는 받침대 위에 구비되며, The wafer is provided on the pedestal,
    받침대에는 반도체 발광소자가 구비되어 반도체 발광소자는 웨이퍼를 가열하는 데 이용되는 것을 특징으로 하는 반도체 웨이퍼 세정방법.The pedestal is provided with a semiconductor light emitting element is a semiconductor wafer cleaning method, characterized in that used to heat the wafer.
  3. 청구항 2에 있어서,The method according to claim 2,
    반도체 발광소자는 근자외선을 발광하는 것을 특징으로 하는 반도체 웨이퍼 세정방법.A semiconductor wafer cleaning method, wherein the semiconductor light emitting device emits near ultraviolet rays.
  4. 청구항 3에 있어서,The method according to claim 3,
    웨이퍼를 가열할 때, 반도체 발광소자는 웨이퍼를 25℃~250℃사이로 가열하는 것을 특징으로 하는 반도체 웨이퍼 세정방법.When heating the wafer, the semiconductor light emitting element is a semiconductor wafer cleaning method, characterized in that for heating the wafer between 25 ℃ to 250 ℃.
  5. 청구항 1에 있어서,The method according to claim 1,
    웨이퍼를 습식 세정 하는 단계;에서,In the step of wet cleaning the wafer;
    오존수를 사용하는 것을 특징으로 하는 반도체 웨이퍼 세정 방법.A method of cleaning a semiconductor wafer, using ozone water.
  6. 청구항 5에 있어서,The method according to claim 5,
    오존수의 농도는 30ppm 이상 200ppm 이하인 것을 특징으로 하는 반도체 웨이퍼 세정 방법.The concentration of ozone water is 30 ppm or more and 200 ppm or less, The semiconductor wafer cleaning method characterized by the above-mentioned.
  7. 청구항 1에 있어서,The method according to claim 1,
    웨이퍼를 건식 세정 하는 단계;에서는Dry cleaning the wafer;
    산소, 질소, 아르곤, 및 사불화탄소 중 적어도 하나를 사용하여 플라즈마를 이용하여 건식 세정하는 것을 특징으로 하는 반도체 웨이퍼 세정 방법.A dry cleaning method using a plasma using at least one of oxygen, nitrogen, argon, and carbon tetrafluoride.
  8. 반도체 웨이퍼 세정 장치에 있어서,In the semiconductor wafer cleaning apparatus,
    건식 세정 모듈; 그리고Dry cleaning modules; And
    건식 세정 모듈 하부에 위치하는 습식 세정 모듈;을 포함하는 것을 특징으로 하는 반도체 웨이퍼 세정 장치.And a wet cleaning module located under the dry cleaning module.
  9. 청구항 8에 있어서,The method according to claim 8,
    습식 세정 모듈에서는 오존수를 사용하는 것을 특징으로 하는 반도체 웨이퍼 세정 장치.In a wet cleaning module, ozone water is used.
  10. 청구항 8에 있어서,The method according to claim 8,
    습식 세정 모듈은 웨이퍼를 받치는 받침대를 포함하며,The wet cleaning module includes a pedestal that supports the wafer,
    받침대에는 반도체 발광소자가 구비되는 것을 특징으로 하는 반도체 웨이퍼 세정 장치.The pedestal is provided with a semiconductor light emitting element, characterized in that the semiconductor wafer cleaning apparatus.
  11. 청구항 10에 있어서,The method according to claim 10,
    받침대에 구비된 반도체 발광소자는 근자외선을 발광하는 것을 특징으로 하는 반도체 웨이퍼 세정 장치.A semiconductor wafer cleaning apparatus, characterized in that the semiconductor light emitting element provided in the pedestal emits near ultraviolet light.
  12. 청구항 8에 있어서,The method according to claim 8,
    받침대에 구비된 반도체 발광소자는 웨이퍼를 25℃~250℃ 사이로 가열하는 것을 특징으로 하는 반도체 웨이퍼 세정 장치.The semiconductor light emitting device provided in the pedestal is a semiconductor wafer cleaning apparatus, characterized in that for heating the wafer between 25 ℃ ~ 250 ℃.
  13. 청구항 8에 있어서,The method according to claim 8,
    습식 세정 모듈에서는 오존수를 사용하며,The wet cleaning module uses ozone water,
    습식 세정 모듈의 웨이퍼는 받침대 위에 위치하며,The wafer of the wet cleaning module is placed on the pedestal,
    받침대에는 반도체 발광소자가 구비되며,The pedestal is provided with a semiconductor light emitting element,
    받침대에 구비된 반도체 발광소자는 근자외선을 발광하는 것을 특징으로 하는 반도체 웨이퍼 세정 장치.A semiconductor wafer cleaning apparatus, characterized in that the semiconductor light emitting element provided in the pedestal emits near ultraviolet light.
PCT/KR2017/008515 2016-08-05 2017-08-07 Method and apparatus for cleaning semiconductor wafer WO2018026251A1 (en)

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KR100952672B1 (en) * 2007-12-18 2010-04-13 세메스 주식회사 Apparatus and method for treating substrate
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