CN101308335A - Method for removing photoresist layer and manufacture method of semiconductor element using the method - Google Patents
Method for removing photoresist layer and manufacture method of semiconductor element using the method Download PDFInfo
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- CN101308335A CN101308335A CNA2007101039441A CN200710103944A CN101308335A CN 101308335 A CN101308335 A CN 101308335A CN A2007101039441 A CNA2007101039441 A CN A2007101039441A CN 200710103944 A CN200710103944 A CN 200710103944A CN 101308335 A CN101308335 A CN 101308335A
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Abstract
Disclosed is a method for removing a photoresist layer; the photoresist layer is engaged in ion implantation process to form a hardening layer on the surface of the layer, so that a soft photoresist layer is left inside the photoresist layer. The method comprises a first removing step which is to remove the hardening layer on the surface of the photoresist layer so as to expose the soft photoresist layer, and a second removing step which is to remove the soft photoresist layer; wherein, the first removing step and the second removing step are carried through in different reaction chambers; the temperature needed in the first removing step is lower than that needed in the second removing step, and is also lower than the solvent gasification point of the photoresist layer.
Description
Technical field
The invention relates to a kind of manufacture method of integrated circuit, and particularly relevant for a kind of manufacture method of removing the method for photoresist layer and using the semiconductor element of the method.
Background technology
In semiconductor processes, can form many integrated circuit usually in the substrate.And integrated circuit comprises many electronic components such as transistor, diode, capacitor, resistance etc. usually.The preparation process of these electronic components is usually included on the specific region and deposits, removes and process such as ion implantation, and it can select the purpose of specific region by little shadow process.
Little shadow process is to form one deck photoresist earlier in substrate.Then, the irradiation of the light by passing light shield, the pattern on the light shield is transferred to the photoresist layer.Afterwards, via developer solution, the photoresist layer of part that can be removed forms the photoresistance pattern.Typical photoresist is made up of photosensitive type polymkeric substance, resin and solvent.When photoresist layer was positive photoresistance, what developer solution was removed was exposure place that produces cracking; When photoresist layer is that what developer solution removed then is not produce crosslinked unexposed place when bearing photoresistance.After the photoresistance pattern forms, then can its as the cover curtain, carry out follow-up dielectric layer etch, metal level etching or ion implantation process etc.After follow-up process is finished, then photoresist layer must be removed.Photoresist layer can dry process or damp process removes.Usually, dry process can adopt oxygen plasma; The wet type rule is to remove with organic solvent or various acid flux material.Afterwards, carry out cleaning process again, to remove residual photoresistor layer or impurity on the substrate surface.
Yet, please refer to Figure 1A, when the photoresist layer in the substrate 8 10 was cover curtain as the ion implantation process, after the ion implantation process, photoresist layer 10 can become and be very difficult to remove.This may be because when carrying out the ion implantation process, ion can pass photoresist layer 10, make the photoresist on surface form chemical bonded refractory and produce crosslinked, and cause photoresist layer 10 surfaces to form the hardened layer 14 that one deck is very difficult to remove, then coating the soft light resistance layer 12 that contains solvent in the hardened layer 14.Crosslinked reaction takes place for it may be that surperficial material becomes the C-C-C key by the H-C-H key, or reaction as follows takes place:
Please refer to Figure 1A and 1B, usually, in order to remove the photoresist layer 10 that carries out behind the ion implantation process, follow-up photoresistance removes process can utilize the very plasma of high temperature, so that photoresist layer 10 ashing.The general plasma ashing temperature that is adopted can be higher than the gasification point of the solvent in the photoresist design layer 10.In the process that removes hardened layer 14, when hardened layer 14 is not also removed when exposing its soft light resistance layer 12 that covers fully, along with the increase of temperature, the pressure in the hardened layer 14 can raise gradually.When temperature was higher than the gasification point of solvent, the solvent of hardened layer 14 inside was understood because can't escape, and made hardened layer 14 blow (popping).Because the photoresist layer fragment 10a after blowing will be dispersed in the substrate 8 and among the board, be very difficult to removal, therefore, can cause the pollution of board or the loss of substrate 8 yields.
Summary of the invention
The invention provides a kind of method of effective removal photoresist layer, cause board to pollute or cause the problem of yield loss to avoid photoresist layer to blow.
The invention provides a kind of manufacture method of semiconductor element,, avoid photoresist layer to blow and cause board to pollute or cause the loss of yield with effective removal photoresist layer.
The present invention proposes a kind of removal method of photoresist layer, and this photoresist layer has carried out a process makes its surface form hardened layer, and hardened layer coats the soft light resistance layer.The method comprises that carrying out first removes step and second and remove step.First to remove step be to remove hardened layer, to expose the soft light resistance layer; Second to remove step be to remove the soft light resistance layer.First removes step and second, and to remove step be to carry out at different reaction chambers, and carry out first temperature that removes step and be lower than and carry out second and remove the temperature of step, and be lower than the gasification point of the solvent in this soft light resistance layer.
Described according to the embodiment of the invention, in the removal method of above-mentioned photoresist layer, the temperature of carrying out first step is lower than the gasification point of the solvent in the soft light resistance layer.
Described according to the embodiment of the invention, in the removal method of above-mentioned photoresist layer, said process is the ion implantation process.
Described according to the embodiment of the invention, in the removal method of above-mentioned photoresist layer, first removes step and second removes step and all adopts dry type to remove process.
Described according to the embodiment of the invention, in the removal method of above-mentioned photoresist layer, dry type removes process and comprises that plasma removes process.
Described according to the embodiment of the invention, in the removal method of above-mentioned photoresist layer, it is to carry out in the mode of thimble decline (pin down) that first plasma that removes step removes process.
Described according to the embodiment of the invention, in the removal method of above-mentioned photoresist layer, the temperature that first dry type that removes step removes process is 30 to 100 degree Celsius.
Described according to the embodiment of the invention, in the removal method of above-mentioned photoresist layer, first removes step and second removes step and all adopts wet type to remove process.
Described according to the embodiment of the invention, in the removal method of above-mentioned photoresist layer, the temperature that first wet type that removes step removes process is 50 to 140 degrees centigrade.
Described according to the embodiment of the invention, in the removal method of above-mentioned photoresist layer, first removes step and second removes that a kind of employing dry type removes process in the step, and the another kind of wet type that adopts removes process.
Described according to the embodiment of the invention, in the removal method of above-mentioned photoresist layer, dry type removes process and comprises that plasma removes process.
Described according to the embodiment of the invention, in the removal method of above-mentioned photoresist layer, first removes the step using plasma removes process, and is to carry out in the mode that thimble descends.
Described according to the embodiment of the invention, in the removal method of above-mentioned photoresist layer, first removes step adopts dry type to remove process, and its temperature is 30 to 100 degrees centigrade.
Described according to the embodiment of the invention, in the removal method of above-mentioned photoresist layer, first removes step adopts wet type to remove process, and its temperature is 50 to 140 degrees centigrade.
Described according to the embodiment of the invention, in the removal method of above-mentioned photoresist layer, said process comprises the ion implantation process.
The present invention proposes a kind of manufacture method of semiconductor element.The method is included in and forms the photoresist layer in the substrate, then, patterning photoresist layer, to form first photoresist design layer and second photoresist design layer, the area of first photoresist design layer is less than the area of second photoresist design layer.Afterwards, with first photoresist design layer and second photoresist design layer is the cover curtain, carry out the ion implantation process, in substrate, to form doped region, wherein first photoresist design layer is completed into first hardened layer, and the surface of second photoresist layer forms second hardened layer and is positioned at soft light resistance layer among second hardened layer., carry out first remove step, remove first hardened layer and second hardened layer, to expose the soft light resistance layer thereafter.Afterwards, carry out second and remove step, remove the soft light resistance layer.First removes step and second removes step and carries out in different reaction chambers, and carries out first temperature that removes step and be lower than and carry out second and remove the temperature of step and be lower than the gasification point of the solvent in this soft light resistance layer.
Described according to the embodiment of the invention, in the manufacture method of above-mentioned semiconductor element, the temperature of carrying out first step is lower than the gasification point of the solvent in the soft light resistance layer.
Described according to the embodiment of the invention, in the manufacture method of above-mentioned semiconductor element, first removes step and second removes step and all adopts dry type to remove process.
Described according to the embodiment of the invention, in the manufacture method of above-mentioned semiconductor element, dry type removes process and comprises that plasma removes process.
Described according to the embodiment of the invention, in the manufacture method of above-mentioned semiconductor element, it is to carry out in the mode that thimble descends that this first plasma that removes step removes process.
Described according to the embodiment of the invention, in the manufacture method of above-mentioned semiconductor element, the temperature that this first dry type that removes step removes process is 30 to 100 degrees centigrade.
Described according to the embodiment of the invention, in the manufacture method of above-mentioned semiconductor element, first removes step and second removes step and all adopts wet type to remove process.
Described according to the embodiment of the invention, in the manufacture method of above-mentioned semiconductor element, the temperature that this first wet type that removes step removes process is 50 to 140 degrees centigrade.
Described according to the embodiment of the invention, in the manufacture method of above-mentioned semiconductor element, first removes step and second removes that a kind of employing dry type removes process in the step, and the another kind of wet type that adopts removes process.
Described according to the embodiment of the invention, in the manufacture method of above-mentioned semiconductor element, dry type removes process and comprises that plasma removes process.
Described according to the embodiment of the invention, in the manufacture method of above-mentioned semiconductor element, this first removes the step using plasma and removes process, and is to carry out in the mode that thimble descends.
Described according to the embodiment of the invention, in the manufacture method of above-mentioned semiconductor element, first removes step adopts dry type to remove process, and its temperature is 30 to 100 degrees centigrade.
Described according to the embodiment of the invention, in the manufacture method of above-mentioned semiconductor element, first removes step adopts wet type to remove process, and its temperature is 50 to 140 degrees centigrade.
Described according to the embodiment of the invention, in the manufacture method of above-mentioned semiconductor element, first photoresist design layer is to cover on the active area of substrate.
The method of removal photoresist layer of the present invention, can avoid photoresist layer in the process that removes, blow the board that causes pollute or cause the problem of substrate yield loss.
The manufacture method of semiconductor element of the present invention can effectively be removed photoresist layer, avoid photoresist layer blow the board that causes pollute or cause the problem of substrate yield loss.
For above and other objects of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
Description of drawings
Figure 1A is the synoptic diagram that illustrates after a kind of photoresist layer in the prior art carries out the ion implantation process.
Figure 1B illustrates that a kind of photoresist layer removes the synoptic diagram that photoresist layer is blown in the process in the prior art.
Fig. 2 is a kind of process flow diagram of removing photoresist layer that illustrates according to the embodiment of the invention.
Fig. 3 A to Fig. 3 E is the diagrammatic cross-section of the manufacture method of a kind of semiconductor element of illustrating according to the embodiment of the invention.
Main description of reference numerals
8,300: substrate
10: photoresist layer
10a: photoresistance fragment
12: the soft light resistance layer
14: hardened layer
200,202: step
301: active area
302: the photoresist layer
304,306: photoresist design layer
304a, 306a: hardened layer
306b: soft light resistance layer
308: the ion implantation process
310: doped region
Embodiment
Fig. 2 is a kind of process flow diagram of removing photoresist layer according to the embodiment of the invention illustrated.The method of removal photoresist layer of the present invention can be used for carrying out the photoresist layer of a process.The material of this photoresist layer comprises photosensitive type polymkeric substance, resin and solvent, and it crosslinked reaction can take place carrying out the said process rear surface, and it may be to be become the C-C-C key or reaction as follows is taken place by the H-C-H key:
And make that the photoresist layer surface produces hardened layer and hardened layer is coating the soft light resistance layer.The process that it carried out for example is the ion implantation process, and the ion of being implanted for example is phosphorus, nitrogen, arsenic, antimony, carbon, germanium, boron, gallium, indium etc.
Step 200 is to carry out first to remove step, to remove the lip-deep hardened layer of photoresist layer, exposes the soft light resistance layer.First removes step can adopt dry type to remove process or wet type removes process.Carrying out the temperature that dry type removes process is the gasification point that is lower than the solvent in the soft light resistance layer.In one embodiment, carrying out the temperature that dry type removes process for example is to be about 30 to 100 degrees centigrade.It for example is that plasma removes process that dry type removes process, and it can carry out having the single reaction chamber or have in the board of a plurality of reaction chambers.Its employed gas for example is oxygen/hydrogen/nitrogen or oxygen/nitrogen; Pressure needs to be preferably greater than 5 holders greater than 1.5 holders.In one embodiment, be to carry out, so that the temperature that sets is more near the temperature of actual base in the thimble mode of (pin down) of descending.The temperature that wet type removes process is 50 to 140 degrees centigrade.In one embodiment, to remove process be to carry out in containing the organic solvent or the chemical tank of inorganic solvent to wet type.Organic solvent easily carries out structural destruction to photoresistance, and photoresistance is dissolved in the solvent.Typical solvent for example is organic solvents such as acetone or aromatic series.The deluster mode of resistance layer of inorganic solvent, its principle is different with organic solvent.Because photoresistance originally as organism, mainly by element chemical combination such as carbon, hydrogen, therefore utilizes inorganic solvent it can be dissolved.Inorganic solvent for example is sulfuric acid or hydrogen peroxide.
Thereafter, step 202 is carried out second and is removed step, removes this soft light resistance layer.Second removes step can adopt dry type to remove process or wet type removes process.Second to remove step be to remove under the temperature of step 200 and carry out being higher than first, and remove in the reaction chamber of step 200 and carry out being different from first.Reaction chamber described herein can be meant that reaction chamber or wet type that dry type removes process remove the employed chemical tank of process.In one embodiment, second removes step 202 removes process for dry type, and temperature is greater than 100 degrees centigrade, and its optimum temperature is between 200 degrees centigrade to 300 degrees centigrade.It for example is that plasma removes process that dry type removes process, and it can carry out having the single reaction chamber or have in the board of a plurality of reaction chambers.Its employed gas for example is oxygen/hydrogen/nitrogen or oxygen/nitrogen; Pressure needs to be preferably greater than 5 holders greater than 1.5 holders.In one embodiment, to remove process be to carry out in containing the organic solvent or the chemical tank of inorganic solvent to wet type.Typical solvent for example is organic solvents such as acetone or aromatic series.Typical inorganic solvent for example is sulfuric acid or hydrogen peroxide.
In one embodiment, first removes step 200 and second removes step 202 and can all adopt dry type to remove process, for example be that (in-situe) plasma of coming personally in the differential responses chamber of same board removes process, or, in the differential responses chamber of different platform, carry out non-(ex-situe) plasma when participating in the cintest and remove process with identical or different form (type) or structure (configuration).Its employed gas for example is oxygen/hydrogen/nitrogen or oxygen/nitrogen.Carrying out the mode that first plasma that removes step adopts thimble to descend when removing process, and first temperature that removes step 200 is lower than second and removes the temperature of step 202, and be lower than the gasification point of the solvent in the soft light resistance layer.
In another embodiment, first removes step 200 and second removes step 202 and can all adopt wet type to remove process, for example is the process that removes of carrying out photoresist layer in containing the different chemical tank of identical or different chemicals.Chemicals in the chemical tank is organic solvent or inorganic solvent for example.Typical solvent for example is organic solvents such as acetone or aromatic series.Typical inorganic solvent for example is sulfuric acid or hydrogen peroxide.First temperature that removes step 200 is lower than second and removes the temperature of step 202, and is lower than the gasification point of the solvent in the soft light resistance layer.
In yet another embodiment, first to remove step 200 be to adopt dry type to remove process, for example is that plasma removes process, and its employed gas for example is oxygen/hydrogen/nitrogen or oxygen/nitrogen, and the mode that adopts thimble to descend when removing is to remove hardened layer; Second removes step 202 can all adopt wet type to remove process, carries out the soft light resistance layer and remove process in the chemical tank of chemicals is housed.It is to carry out in containing the organic solvent or the chemical tank of inorganic solvent that wet type removes process.Typical solvent for example is organic solvents such as acetone or aromatic series.Typical inorganic solvent for example is sulfuric acid or hydrogen peroxide.First temperature that removes step 200 is lower than second and removes the temperature of step 202, and is lower than the gasification point of the solvent in the soft light resistance layer.
Fig. 3 A to Fig. 3 E is the diagrammatic cross-section of the manufacture method of a kind of semiconductor element of illustrating according to the embodiment of the invention.
Please refer to Fig. 3 A, in substrate 300, form photoresist layer 302.Substrate 300 for example is the semiconductor-based end, as silicon base.The material of photoresist layer 302 comprises photosensitive type polymkeric substance, resin and solvent.
Afterwards, please refer to Fig. 3 B, expose and developing process, make photoresist layer 302 form photoresist design layer 304,306.The area of photoresist design layer 304 is less than photoresist design layer 306.Photoresist design layer 304 for example is to cover on the active area 301 of substrate 300.
Then, please refer to Fig. 3 C, serves as the cover curtain with photoresist design layer 304,306, carries out ion implantation process 308, to form doped region 310 in substrate 300.The ion that the ion implantation process is implanted for example is phosphorus, nitrogen, arsenic, antimony, carbon, germanium, boron, gallium, indium etc.Doped region 310 for example is source/drain extension area, source/drain regions, diode doped region, wellblock, an implantation region, pouch-type ion implantation region, light doped source/drain doped region etc.After carrying out ion implantation process 308,, therefore, be completed into hardened layer 304a because the area of photoresist design layer 304 is less; Photoresist design layer 306 is then bigger because of area, and only has the surface to form hardened layer 306a, and inside then stays soft light resistance layer 306b.
Afterwards, please refer to Fig. 3 D,, carry out first and remove step, remove hardened layer 304a and hardened layer 306a, expose soft light resistance layer 306b according to the mode of the foregoing description.
, please refer to Fig. 3 E, according to the mode of the foregoing description, carry out second and remove step, to remove the soft light resistance layer thereafter.Second to remove step be to remove under the temperature of step and carry out being higher than first, but remove in the reaction chamber of step and carry out being different from first.Reaction chamber described herein can be meant that reaction chamber or wet type that dry type removes process remove the employed chemical tank of process.
Of the present invention first to remove step be to carry out under lower temperature, for example is less than 100 ℃, therefore can avoid photoresist layer because the gasification of solvent wherein and blow that institute's board that causes pollutes or problems such as substrate yield loss.Second to remove step be to carry out under higher temperature, therefore, can effectively remove residual soft light resistance layer.Remove the process of photoresist layer compared to the RCA that only uses high temperature, the present invention can avoid using the problem of the heavy losses oxide layer that RCA caused of high temperature.
In addition, compared to only being the process that removes photoresist layer with low temperature RCA, the present invention can avoid low temperature RCA can't remove the problem of photoresist layer fully.In addition,, therefore, not only can avoid photoresist layer to blow the pollution problem that is caused, also can increase output (throughput) because first remove step and second to remove step be to carry out in different reaction chambers.
Experimental example 1
Substrate is provided, has formed photoresist design layer on it and carried out the ion implantation process.Then, carry out first and remove step in first chamber of plasma board, this step is the mode that adopts thimble to descend, and its temperature is 90 degrees centigrade; Employed gas is O
2, N
2H
2Pressure is 5 holders; Afterwards, carry out second and remove step in the different chamber of same board, its temperature is 250 degrees centigrade; Employed gas is O
2, N
2H
2Pressure is 5 holders.Afterwards, measure suprabasil number of defects.Thereafter, clean, and measure suprabasil number of defects, its result is as shown in table 1.Wherein comparative example 1 is with the resulting result of method of the prior art.
Table 1
As shown in Table 1, the present invention can significantly reduce photoresist layer and blow the number of defects that is caused, and promotes the yield of preparation process.
Though the present invention discloses as above with preferred embodiment; yet it is not in order to limit the present invention; those of ordinary skill in the art; without departing from the spirit and scope of the present invention; should do a little change and retouching, so protection scope of the present invention should be as the criterion with defining of appending claims.
Claims (27)
1. the removal method of a photoresist layer, this photoresist layer have been carried out a process makes its surface form hardened layer, and this hardened layer coats soft light resistance layer, and this method comprises:
Carry out first and remove step, remove this hardened layer, to expose this soft light resistance layer; And
Carry out second and remove step, remove this soft light resistance layer,
Wherein this first removes step and second removes step and carry out at different reaction chambers with this, and carries out this first temperature that removes step and be lower than and carry out this and second remove the temperature of step, and is lower than the gasification point of the solvent in this photoresist layer.
2. according to the removal method of the photoresist layer of claim 1, wherein this process is the ion implantation process.
3. according to the removal method of the photoresist layer of claim 1, wherein this first removes step and this second and removes step and all adopt dry type to remove process.
4. according to the removal method of the photoresist layer of claim 3, wherein this dry type removes process and comprises that plasma removes process.
5. according to the removal method of the photoresist layer of claim 4, wherein to remove process be to carry out in the thimble mode of (pin down) of descending to this first this plasma that removes step.
6. according to the removal method of the photoresist layer of claim 3, wherein to remove the temperature of process be 30 to 100 degrees centigrade to first this dry type that removes step.
7. according to the removal method of the photoresist layer of claim 1, wherein this first removes step and this second and removes step and all adopt wet type to remove process.
8. according to the removal method of the photoresist layer of claim 7, wherein this first this wet type that removes step temperature of removing process is 50 to 140 degrees centigrade.
9. according to the removal method of the photoresist layer of claim 1, wherein this first removes step and this second and removes that a kind of employing dry type removes process in the step, and the another kind of wet type that adopts removes process.
10. according to the removal method of the photoresist layer of claim 9, wherein this dry type removes process and comprises that plasma removes process.
11. according to the removal method of the photoresist layer of claim 10, wherein this first removes step and adopts this plasma to remove process, and is to carry out in the thimble mode of (pin down) of descending.
12. according to the removal method of the photoresist layer of claim 9, wherein first remove step and adopt this dry type to remove process, its temperature is 30 to 100 degrees centigrade.
13. according to the removal method of the photoresist layer of claim 9, wherein first remove step and adopt this wet type to remove process, its temperature is 50 to 140 degrees centigrade.
14. according to the removal method of the photoresist layer of claim 1, wherein this process comprises the ion implantation process.
15. the manufacture method of a semiconductor element comprises:
In substrate, form the photoresist layer;
This photoresist layer of patterning, to form first photoresist design layer and second photoresist design layer, the area of this first photoresist design layer is less than the area of this second this photoresist design layer;
With this first photoresist design layer and second photoresist design layer is the cover curtain, carry out the ion implantation process, in this substrate, to form doped region, this first photoresist design layer is completed into first hardened layer, and the surface of this second photoresist layer forms second hardened layer and is positioned at soft light resistance layer among second hardened layer;
Carry out first and remove step, remove this first hardened layer and this second hardened layer, to expose this soft light resistance layer; And
Carry out second and remove step, remove this soft light resistance layer,
Wherein this first removes step and second removes step and carry out in different reaction chambers with this, and carries out this first temperature that removes step and be lower than and carry out this second gasification point that removes the temperature of step and be lower than the solvent in this soft light resistance layer.
16. according to the manufacture method of the semiconductor element of claim 15, wherein this first removes step and this second and removes step and all adopt dry type to remove process.
17. according to the manufacture method of the semiconductor element of claim 16, wherein this dry type removes process and comprises that plasma removes process.
18. according to the manufacture method of the semiconductor element of claim 17, wherein to remove process be to carry out in the mode that thimble descends to this first this plasma that removes step.
19. according to the manufacture method of the semiconductor element of claim 16, wherein this first this dry type that removes step temperature of removing process is 30 to 100 degrees centigrade.
20. according to the manufacture method of the semiconductor element of claim 15, wherein this first removes step and this second and removes step and all adopt wet type to remove process.
21. according to the manufacture method of the semiconductor element of claim 20, wherein this first this wet type that removes step temperature of removing process is 50 to 140 degrees centigrade.
22. according to the manufacture method of the semiconductor element of claim 15, wherein this first removes step and this second and remove that a kind of employing dry type removes process in the step, the another kind of wet type that adopts removes process.
23. according to the manufacture method of the semiconductor element of claim 22, wherein this dry type removes process and comprises that plasma removes process.
24. according to the manufacture method of the semiconductor element of claim 23, wherein this first removes step and adopts this plasma to remove process, and is to carry out in the mode that thimble descends.
25. according to the manufacture method of the semiconductor element of claim 22, wherein this first removes step and adopt this dry type to remove process, its temperature is 30 to 100 degrees centigrade.
26. according to the manufacture method of the semiconductor element of claim 22, wherein this first removes step and adopt this wet type to remove process, its temperature is 50 to 140 degrees centigrade.
27. according to the manufacture method of the semiconductor element of claim 15, wherein first photoresist design layer is to cover on the active area of this substrate.
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| CNA2007101039441A CN101308335A (en) | 2007-05-15 | 2007-05-15 | Method for removing photoresist layer and manufacture method of semiconductor element using the method |
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| CNA2007101039441A CN101308335A (en) | 2007-05-15 | 2007-05-15 | Method for removing photoresist layer and manufacture method of semiconductor element using the method |
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| CN102968003A (en) * | 2012-11-29 | 2013-03-13 | 上海华力微电子有限公司 | Method for removing photoresist |
| CN103545259A (en) * | 2012-07-13 | 2014-01-29 | 中芯国际集成电路制造(上海)有限公司 | Method of removing PMOS replacement gate of CMOS transistor |
| CN103592827A (en) * | 2012-08-16 | 2014-02-19 | 中芯国际集成电路制造(上海)有限公司 | Method used for removing photoresist layer after high-dosage ion implantation |
| CN104051258A (en) * | 2013-03-13 | 2014-09-17 | 中芯国际集成电路制造(上海)有限公司 | Photoresist removing method applied to gate last process |
| CN104752226A (en) * | 2013-12-31 | 2015-07-01 | 中芯国际集成电路制造(上海)有限公司 | Forming method of transistor |
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| CN103545259B (en) * | 2012-07-13 | 2016-11-02 | 中芯国际集成电路制造(上海)有限公司 | The minimizing technology of the PMOS replacement gate of CMOS tube |
| CN103592827A (en) * | 2012-08-16 | 2014-02-19 | 中芯国际集成电路制造(上海)有限公司 | Method used for removing photoresist layer after high-dosage ion implantation |
| CN103592827B (en) * | 2012-08-16 | 2016-08-03 | 中芯国际集成电路制造(上海)有限公司 | The method removing the photoresist layer after high dose ion is injected |
| CN102968003A (en) * | 2012-11-29 | 2013-03-13 | 上海华力微电子有限公司 | Method for removing photoresist |
| CN102968003B (en) * | 2012-11-29 | 2015-03-18 | 上海华力微电子有限公司 | Method for removing photoresist |
| CN104051258A (en) * | 2013-03-13 | 2014-09-17 | 中芯国际集成电路制造(上海)有限公司 | Photoresist removing method applied to gate last process |
| CN104051258B (en) * | 2013-03-13 | 2017-02-15 | 中芯国际集成电路制造(上海)有限公司 | Photoresist removing method applied to gate last process |
| CN104752226A (en) * | 2013-12-31 | 2015-07-01 | 中芯国际集成电路制造(上海)有限公司 | Forming method of transistor |
| CN106373873A (en) * | 2016-08-31 | 2017-02-01 | 上海华力微电子有限公司 | Method for overcoming photoresist-caused spherical shortcoming |
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