KR100946758B1 - Light emitting diode and manufacturing method thereof - Google Patents

Light emitting diode and manufacturing method thereof Download PDF

Info

Publication number
KR100946758B1
KR100946758B1 KR1020070114217A KR20070114217A KR100946758B1 KR 100946758 B1 KR100946758 B1 KR 100946758B1 KR 1020070114217 A KR1020070114217 A KR 1020070114217A KR 20070114217 A KR20070114217 A KR 20070114217A KR 100946758 B1 KR100946758 B1 KR 100946758B1
Authority
KR
South Korea
Prior art keywords
light emitting
semiconductor layer
layer
emitting diode
capacitor
Prior art date
Application number
KR1020070114217A
Other languages
Korean (ko)
Other versions
KR20090048030A (en
Inventor
이종희
Original Assignee
(주)더리즈
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by (주)더리즈 filed Critical (주)더리즈
Priority to KR1020070114217A priority Critical patent/KR100946758B1/en
Publication of KR20090048030A publication Critical patent/KR20090048030A/en
Application granted granted Critical
Publication of KR100946758B1 publication Critical patent/KR100946758B1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body

Abstract

The present invention provides a light emitting diode and a method of manufacturing the same, which can simplify the process, minimize package area loss, and improve luminous efficiency by configuring an ESD circuit in the light emitting diode device itself. A light emitting diode device according to the present invention includes a light emitting stack structure including a semiconductor layer for emitting light, a pair of pad electrodes formed on the light emitting stack structure to supply power to the semiconductor layer, and a stack of the light emitting diodes. And a capacitor formed on top of the structure, the capacitor being disposed in parallel with the light emitting stack structure between the pair of pad electrodes.

Light Emitting Diodes, ESD Protection Circuits, Capacitors

Description

LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF

The present invention relates to a light emitting diode device and a method for manufacturing the same, and more particularly, to a light emitting diode and a method for manufacturing the same by forming an ESD protection circuit in the device chip itself, reducing the cross-sectional area of the package, increase the light emitting efficiency and production yield It is about.

BACKGROUND ART In general, light emitting diodes used as devices for emitting light have been spotlighted as next-generation lighting replacing incandescent bulbs or fluorescent lamps. In particular, as blue light emitting diodes using nitride compound semiconductors such as gallium nitride (GaN) have been developed, all colors can be realized, and thus, demands are increasing in various ways.

As in other general semiconductor devices, light emitting diode devices further form an electrostatic discharge (ESD) protection circuit in the device package. ESD protection circuit is a kind of protection circuit to prevent the device from being destroyed by external static electricity or instantaneous high voltage shock such as static electricity by human contact. This circuit allows current to be grounded without going directly through the device.

1 is an equivalent circuit diagram of a conventional ESD protection circuit.

As illustrated, a configuration in which a pair of zener diodes 12 are arranged in parallel with the light emitting diode circuit 10 is typical. Zener diode is a diode using the zener phenomenon, which refers to the dielectric breakdown phenomenon due to the increase in the reverse voltage. The zener diode usually adjusts the zener breakdown voltage generated at a reverse voltage of several tens of volts or more, so that a breakdown phenomenon occurs at a relatively low reverse voltage. Means a diode formed so that. Zener diodes are used for applications where a constant reference voltage is always required, regardless of the current or voltage conditions of the surrounding circuit or device.

In the ESD protection circuit shown in FIG. 1, when a momentary high voltage is applied to both ends of the light emitting diodes 10, a breakdown phenomenon occurs in the zener diodes 12 arranged in parallel with the light emitting diodes so that a current is generated in the zener diodes 12. Since it flows through), it is possible to prevent the current flowing by the high voltage to the light emitting diode (10).

However, in order to arrange the zener diode in addition to the light emitting diode in this way, a separate process for this is added, as well as disadvantages in terms of package area. It will bring a lot of losses.

The present invention is to solve the above problems, to provide a light emitting diode and a method of manufacturing the same to configure the ESD protection circuit in the light emitting diode device itself to simplify the process, minimize the package area loss and increase the luminous efficiency. The purpose.

In order to achieve the above technical problem, a light emitting diode device according to the present invention includes a light emitting stack structure including a semiconductor layer for emitting light, and a pair of pad electrodes formed on the light emitting stack structure to supply power to the semiconductor layer. And a capacitor formed over the stacked structure of the light emitting diodes and disposed in parallel with the light emitting stacked structure between the pair of pad electrodes.

In this case, the capacitor may have a stacked structure of a lower electrode-dielectric layer-upper electrode, and at least one of the lower electrode and the upper electrode may be a transparent electrode. The light emitting diode may include a first semiconductor layer and a second semiconductor layer formed on the first semiconductor layer, and an upper electrode of the capacitor may be electrically connected to the first semiconductor layer. The semiconductor device may further include a metal connection layer penetrating the light emitting diode and the capacitor to electrically connect the upper electrode of the capacitor and the first semiconductor layer. The dielectric layer of the capacitor may include a lower electrode of the capacitor and the second semiconductor. It can be formed to electrically separate the metal connecting layer from the layer.

According to another aspect of the present invention, there is provided a method of manufacturing a light emitting diode device, including: forming a semiconductor layer having a laminated structure on a prepared substrate; Forming a lower electrode on the semiconductor layer of the stacked structure; Etching a portion of the lower electrode and the semiconductor layer to expose a portion of the lower semiconductor layer of the semiconductor layer; Forming a dielectric layer on the lower electrode; Forming an upper electrode over the dielectric layer; And forming a metal connection layer connecting the upper electrode and the exposed lower semiconductor layer.

Here, the semiconductor layer of the stacked structure is formed in order from below to include an n-type semiconductor layer, an active layer, and a p-type semiconductor layer, and etching a portion of the semiconductor layer is the lower electrode, the p-type semiconductor layer, Proceeding to form a hole shape penetrating the active layer, the bottom of the hole shape may be the n-type semiconductor layer. In the forming of the dielectric layer, an insulating spacer covering the inner wall of the hole shape may be formed, and in the forming of the metal connection layer, a metal pad may also be formed on the semiconductor layer.

According to the embodiment of the present invention, since the ESD protection circuit is configured on the light emitting diode device itself, the effect of simplifying the ESD protection circuit forming process, minimizing package area loss, and reducing the light efficiency reduced by the separate ESD protection circuit is improved. can do.

In particular, since the capacitor is manufactured using a transparent electrode on the stacked structure of the light emitting diode, light loss can be minimized. In addition, it is possible to increase the production yield of the package by saving the space required to form a separate ESD protection circuit, and to maximize the area of the light emitting diode in a limited size chip.

Hereinafter, a method of manufacturing a light emitting diode according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. When a part of a layer, film, region, plate, etc. is said to be "on" another part, this includes not only the other part being "right over" but also another part in the middle. On the contrary, when a part is "just above" another part, there is no other part in the middle.

2 is an equivalent circuit diagram of an ESD protection circuit according to an embodiment of the present invention. As illustrated, the capacitor 110 and the resistor 120 are disposed in parallel with the LED circuit 100. When there is a capacitor and a resistor arranged in parallel with the light emitting diode, there is an effect that all the applied voltage is not transferred to the light emitting diode until the charge is charged up to the capacitance of the capacitor.

3 is a graph for explaining a change in voltage substantially applied to a light emitting diode according to a time change after the maximum voltage Va is applied. As shown in the figure, only a part of the maximum voltage applied to the light emitting diode is applied to the initial portion of the voltage applied, and after a predetermined time, all of the maximum applied voltages affect the light emitting diode. The reason for this phenomenon is that even when a voltage is applied to the circuit, the maximum voltage is not applied to the circuit until the capacitance of the capacitor is sufficiently filled, so that only a part of the maximum voltage is applied to the light emitting diode arranged in parallel with the capacitor. Only after enough time has filled the capacitor's capacitance will the maximum voltage affect the light emitting diode.

Since most of the ESD phenomena, such as the generation of static electricity, generate a high voltage instantaneously, an ESD protection circuit of a method of delaying the application of the maximum voltage as in the present invention may be effective. In such an ESD protection circuit, the capacitor should be as large as possible in the capacity. The larger the capacitor's capacity, the greater the effect of lowering the instantaneous voltage. As a method of increasing the capacity of the capacitor, a method of increasing the area of the capacitor electrode or using a high dielectric material for the material used for the capacitor dielectric may be adopted.

4 is a schematic cross-sectional view of a light emitting diode device according to an embodiment of the present invention. This applies the equivalent circuit diagram shown in FIG. 2 to a light emitting diode element.

As shown in FIG. 4, a light emitting diode device according to an embodiment of the present invention includes a light emitting diode 100, a pair of pad electrodes 132 and 134 disposed at both ends of the light emitting diode, and a pair of light emitting diodes. A capacitor 110 disposed in parallel with the light emitting diode 100 between the pad electrodes 132 and 134 and a metal connection layer 122 as a resistance component.

The light emitting diode 100 includes a first semiconductor layer 104, an active layer 106, and a second semiconductor layer 108 that are sequentially stacked on the substrate 102, and includes a substrate and a first semiconductor layer. A buffer layer (not shown) may be formed therebetween to improve interfacial properties. In this case, the first semiconductor layer 104 and the second semiconductor layer 108 have different conductivity types. For example, the first semiconductor layer 104 is an n-type semiconductor layer, and the second semiconductor layer 108 is a p-type semiconductor layer. To form. A pn junction is formed at an interface between the first semiconductor layer 104 and the second semiconductor layer 108, and emits light by recombination of electron-hole pairs when current flows through the pn junction. In this case, the wavelength of the emitted light may be adjusted according to the material properties of the active layer 106 inserted into the pn junction region.

The capacitor 110 is formed on the stacked structure of the light emitting diode 100 to connect the lower electrode 112, the dielectric layer 114, and the upper electrode 116 electrically connected to the upper pad electrode 132. It is formed into a laminated structure containing. Here, the lower electrode 112 and the upper electrode 116 may be formed as a transparent electrode, and in the case of forming the transparent electrode, since the light is emitted from the light emitting diode to the outside, it is advantageous in terms of luminous efficiency.

The upper electrode 116 is electrically connected to the lower region of the first semiconductor layer 104 through the metal connection layer 122 to the lower pad electrode 134. In this case, the lower electrode 112, the second semiconductor layer 108, the active layer 106 and the like are formed to be electrically separated from the metal connection layer 122, as shown in the dielectric layer of the capacitor It is formed as a spacer for the metal connection layer 122 to function as an insulating layer for electrical separation.

According to the above structure, the capacitor 110 is electrically arranged in parallel with the light emitting diode 100 between the pair of pad electrodes 132 and 134, and the metal connection layer 122 and the first electrode are arranged in parallel. The lower region of the semiconductor layer 104 functions as the resistive component 120 on the equivalent circuit diagram of FIG. 2.

5A to 5D are cross-sectional views illustrating exemplary steps in the method of manufacturing a light emitting diode device according to an embodiment of the present invention.

First, as shown in FIG. 5A, the semiconductor layers 104, 106 and 108 having a stacked structure are formed on the prepared substrate 102, and the lower electrode 112 is disposed on the semiconductor layers 104, 106 and 108 having the stacked structure. ) And then selectively etch upper portions of the lower electrode 112, the second semiconductor layer 108, the active layer 106, and the first semiconductor layer 104 of the semiconductor layer. A portion of layer 104 is exposed.

The selective etching may be generally performed through a dry etching method after forming a pattern using a mask, but other methods such as wet etching may also be used. In the etching step, the lower electrode 112, the second semiconductor layer 108, and the active layer 106 may be etched in a pattern having a hole H shape. Since the pattern of the hole H shape is a portion where the metal connection layer 122 is to be formed in a plug shape in a subsequent process, it is advantageous that the area of the hole H is large for stable connection, but the area of the hole H is large. Since the effective area of the light emitting diode 110 decreases as it becomes larger, it is desirable to design the size and shape of the hole H by making a compromise between these limitations.

Thereafter, as illustrated in FIG. 5B, a dielectric layer 114 is formed on the lower electrode 112. Materials usable for forming the dielectric layer 114 include SiO 2 , SiN x , Al 2 O 3 , TiO 2 , ZrO 2 , BaTiO 3 , SrTiO 3 , Ta 2 O 3, and the like. It may be selected in consideration of ease and the like. The dielectric layer 114 is used as a dielectric material of the capacitor 110 and at the same time, the metal connection layer 122 formed in a subsequent process includes the lower electrode 112, the second semiconductor layer 108, and the active layer 106. It is also used as an insulating layer that electrically separates from. Therefore, the dielectric layer 114 is formed in the form of a spacer covering the surface of the lower electrode 112 and at the same time covering the inner wall of the hole (H). However, the dielectric layer remaining at the bottom of the hole H is removed for the electrical connection between the metal connection layer 122 and the first semiconductor layer 102 in a subsequent process. The process of removing the dielectric layer remaining at the bottom of the hole H does not necessarily need to be performed in the step of FIG. 5B, but only before forming the metal connection layer 122. After the dielectric layer 114 is formed, the dielectric layer 114 is removed in a region where the pad electrode 132 is to be formed through a patterning process. In FIG. 5B, the patterning process is performed immediately after the dielectric layer 114 is formed. However, the patterning process may be patterned together with the upper electrode 116 after the formation of the upper electrode 116 is completed.

Thereafter, as shown in FIG. 5C, an upper electrode 116 is formed on the dielectric layer 114. In order to maximize the light emitting efficiency of the LED device, the upper electrode 116, the lower electrode 112, and the dielectric layer 114 positioned on the LED stack structure may be selected from a material having excellent light transmittance or may be formed very thinly. desirable. For example, a transparent electrode such as ITO may be used for the upper electrode 116 and the lower electrode 112, and the dielectric layer may use a transparent oxide thin film. In particular, the thinner the dielectric layer has the effect of increasing the light transmittance as well as the capacitance, it can be formed as thin as possible within the allowable process range.

Thereafter, as illustrated in FIG. 5D, a metal connection layer 122 is formed to connect the upper electrode 116 and the exposed lower semiconductor layer 102. The metal connection layer 122 is formed in the shape of a plug in the hole H to electrically connect the upper electrode 116 and the semiconductor layer 102. In this step, the pad electrodes 134 and 132 on the lower semiconductor layer 102 and the lower electrode 112 may also be formed. Therefore, as the material used for the metal connection layer 122, an electrode material commonly used in a light emitting diode device may be used, and representative examples thereof include Ti, Al, Au, Cr, Ni, Cu, Pt, W, Mo, and the like. Metals and alloys thereof.

As described above, only the process of forming the capacitor dielectric layer 114 and the upper electrode 116 and the process of forming the hole H are added to the conventional manufacturing process of the light emitting diode device. Can be implemented. In particular, it is possible to save space for forming a separate ESD circuit, and as a result, as the area of the light emitting diode increases, the capacitance of the capacitor also increases in proportion, thereby maximizing the ESD protection effect. Of course, as described above, it is also possible to increase the capacitance by using a high dielectric material in the dielectric layer while maintaining the same area.

In the above, the present invention has been described with reference to the presently considered embodiments, but the present invention should not be understood as being limited to the above embodiments. Rather, it should be construed as including all modifications of the range which are easily changed by those skilled in the art from the above-described embodiment of the present invention and considered equivalent.

1 is an equivalent circuit diagram of a conventional ESD protection circuit.

2 is an equivalent circuit diagram of an ESD protection circuit according to an embodiment of the present invention.

3 is a graph for explaining a change in voltage substantially applied to a light emitting diode according to a time change.

4 is a schematic cross-sectional view of a light emitting diode device according to an embodiment of the present invention.

5A to 5D are cross-sectional views illustrating exemplary steps in the method of manufacturing a light emitting diode device according to an embodiment of the present invention.

Claims (10)

In the light emitting diode device, A light emitting stack structure including a first semiconductor layer, an active layer formed on the first semiconductor layer, and a second semiconductor layer formed on the active layer; A capacitor formed on the light emitting stack structure, the capacitor including a lower electrode, a dielectric layer formed on the lower electrode, and an upper electrode formed on the dielectric layer; A resistor formed to penetrate the capacitor and the light emitting stack structure and electrically connecting an upper electrode of the capacitor to the first semiconductor layer; A first electrode pad electrically connected to the first semiconductor layer and the metal connection layer; And A second electrode pad electrically connected to the second semiconductor layer and the lower electrode; Including, The dielectric layer of the capacitor is formed to electrically separate the metal connection layer from the lower electrode of the capacitor and the second semiconductor layer. delete The method of claim 1, At least one of the lower electrode and the upper electrode is a transparent electrode. delete delete Forming a light emitting stack structure including a first semiconductor layer, an active layer, and a second semiconductor layer on the prepared substrate; Forming a lower electrode on the light emitting stack structure; Etching a portion of the lower electrode and the light emitting stacked structure to expose a portion of the first semiconductor layer; Forming a dielectric layer on the lower electrode; Forming an upper electrode over the dielectric layer; And Forming a metal connection layer connecting the upper electrode and the exposed first semiconductor layer; Etching a portion of the lower electrode and the light emitting stack structure may be etched into a hole shape penetrating the lower electrode, the second semiconductor layer, and the active layer, wherein the bottom of the hole shape is the first semiconductor layer. Formed inside, Forming the dielectric layer is a method of manufacturing a light emitting diode device, characterized in that the dielectric layer covers the inner wall except the bottom of the hole shape. The method of claim 6, At least one of the lower electrode and the upper electrode is formed of a transparent electrode. delete delete The method of claim 6, In the forming of the metal connection layer, the method of manufacturing a light emitting diode device, characterized in that the electrode pad is formed on the light emitting laminated structure at the same time.
KR1020070114217A 2007-11-09 2007-11-09 Light emitting diode and manufacturing method thereof KR100946758B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020070114217A KR100946758B1 (en) 2007-11-09 2007-11-09 Light emitting diode and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070114217A KR100946758B1 (en) 2007-11-09 2007-11-09 Light emitting diode and manufacturing method thereof

Publications (2)

Publication Number Publication Date
KR20090048030A KR20090048030A (en) 2009-05-13
KR100946758B1 true KR100946758B1 (en) 2010-03-11

Family

ID=40857279

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070114217A KR100946758B1 (en) 2007-11-09 2007-11-09 Light emitting diode and manufacturing method thereof

Country Status (1)

Country Link
KR (1) KR100946758B1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100986407B1 (en) * 2009-10-22 2010-10-08 엘지이노텍 주식회사 Light emitting device and method for fabricating the same
KR100986556B1 (en) * 2009-10-22 2010-10-07 엘지이노텍 주식회사 Light emitting device and method for fabricating the same
KR101039896B1 (en) 2009-12-03 2011-06-09 엘지이노텍 주식회사 Light emitting device and fabrication method thereof
KR101028206B1 (en) * 2010-04-08 2011-04-11 엘지이노텍 주식회사 Light emitting device, method for fabricating the same and light emitting device package
KR102100936B1 (en) * 2013-07-10 2020-04-16 서울바이오시스 주식회사 Led chip having esd protection
CN106784173B (en) * 2016-11-11 2018-09-21 聚灿光电科技股份有限公司 LED chip and preparation method thereof with capacitance structure
CN109216518B (en) * 2017-06-30 2020-06-12 苏州新纳晶光电有限公司 Preparation method and application of antistatic LED chip

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003243701A (en) 2003-03-20 2003-08-29 Toyoda Gosei Co Ltd Iii nitride-based semiconductor light emitting element
JP2004342885A (en) * 2003-05-16 2004-12-02 Sumitomo Chem Co Ltd Light emitting device and light emitting apparatus
KR20060062715A (en) * 2004-12-06 2006-06-12 삼성전기주식회사 Gan semiconductor light emitting device having esd protection diode
KR20060109728A (en) * 2005-04-18 2006-10-23 엘지전자 주식회사 Light-emitting diode union capacitor for preventing electrostatic discharge

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003243701A (en) 2003-03-20 2003-08-29 Toyoda Gosei Co Ltd Iii nitride-based semiconductor light emitting element
JP2004342885A (en) * 2003-05-16 2004-12-02 Sumitomo Chem Co Ltd Light emitting device and light emitting apparatus
KR20060062715A (en) * 2004-12-06 2006-06-12 삼성전기주식회사 Gan semiconductor light emitting device having esd protection diode
KR20060109728A (en) * 2005-04-18 2006-10-23 엘지전자 주식회사 Light-emitting diode union capacitor for preventing electrostatic discharge

Also Published As

Publication number Publication date
KR20090048030A (en) 2009-05-13

Similar Documents

Publication Publication Date Title
KR100946758B1 (en) Light emitting diode and manufacturing method thereof
JP5122817B2 (en) LED production by ion implant isolation
CN106663722B (en) Light-emitting component
CN101889354B (en) Light emitting device package and method for fabricating the same
JP4299580B2 (en) Light emitting element and light emitting device
EP2244309A1 (en) Led package structure having the led and method for fabricating the led
KR101239857B1 (en) Semiconductor light emitting device and method for manufacturing thereof
TW200805715A (en) High-efficiency, overvoltage-protected, light-emitting semiconductor device
KR101039939B1 (en) Light emitting device, method for fabricating the light emitting device, light emitting device package and lighting system including the same
EP2201616A2 (en) Light emitting device and method for fabricating the same
TW200950130A (en) Light emitting diode package capable of providing electrostatic discharge circuit protection and process of making the same
CN109659414A (en) A kind of flip LED chips and preparation method thereof
CN105531834A (en) Led chip having esd protection
US20130214247A1 (en) Ac led device and its manufacturing process for general lighting applications
KR100649642B1 (en) Compound semiconductor light emitting device having an esd protecting element and method for manufacturing the same
KR100905884B1 (en) Light emitting device having protection element
US9343633B1 (en) Light-emitting diode lighting device
CN110021691B (en) Semiconductor light emitting device
JP3935175B2 (en) Light emitting device and manufacturing method thereof
KR20110031895A (en) Led with reduced electrode area
KR101593631B1 (en) Light emitting device package and method of manufacturing the same
CN209747553U (en) High-voltage light-emitting diode chip
KR20160124718A (en) Light emitting diode array on wafer level and method of forming the same
KR101743084B1 (en) Semiconductor lighting device
US9318472B1 (en) Light-emitting diode lighting device

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E90F Notification of reason for final refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
LAPS Lapse due to unpaid annual fee