JP4299580B2 - Light emitting element and light emitting device - Google Patents

Description

[0001]
[Patent Document 1]
JP 2000-216442 A [Patent Document 2]
JP 2001-230448 A [Patent Document 3]
JP 2002-94121 A
BACKGROUND OF THE INVENTION
The present invention relates to a light emitting element using a semiconductor film formed on a substrate and a light emitting device using the light emitting element.
[0003]
[Prior art]
In recent years, light-emitting elements using gallium nitride-based materials have been incorporated and commercialized as light sources for blue, green, or white light-emitting devices. This type of light-emitting element has a light-emitting functional part (hereinafter referred to as “semiconductor light-emitting element” in this specification) composed of a semiconductor film using a gallium nitride-based compound semiconductor, an anode electrode, and a cathode electrode. LED chips (hereinafter referred to as “light emitting elements” in the present specification) in which a semiconductor light emitting element is formed on an insulating substrate are assembled in an appropriate case to manufacture a light emitting device. is doing.
[0004]
When the light-emitting device configured as described above is actually used, since the high insulation between the anode electrode and the cathode electrode has been conventionally applied, when a high voltage is applied between both electrodes due to static electricity, There is a problem that the light emitting element is destroyed (electrostatic breakdown, ESD).
[0005]
In order to solve this problem, conventionally, electronic components such as resistors, capacitors, and varistors are incorporated on an electric circuit board outside the light emitting device (LED lamp) to cause electrostatic breakdown of the semiconductor light emitting element inside the light emitting device. A configuration in which a diode is connected in parallel with the semiconductor light emitting element in the light emitting device (for example, see Patent Document 1 and Patent Document 2), or a configuration in which a resistor is connected in the light emitting device (for example, Patent Document 3) has been proposed.
[0006]
[Problems to be solved by the invention]
However, according to the configuration in which the electronic components are mounted outside the light emitting device, the number of components to be mounted on the circuit board increases, the size of the circuit board increases due to the occupied space, and the mounting of the components As the number of processes increases, there is a problem that the cost of the apparatus is increased and the size is increased. In addition, according to the configuration in which components for preventing electrostatic breakdown are incorporated in the light emitting device, a very small size resistor, capacitor, etc. are mounted inside the device, so that the process becomes complicated and the cost increases. Has a point. In any case, since the individual electronic components are attached to the light emitting element, the manufacturing cost is inevitably increased due to the attachment.
[0007]
An object of the present invention is to provide a light-emitting element and a light-emitting device having a high resistance to electrostatic breakdown that can solve the above-mentioned problems in the prior art.
[0008]
An object of the present invention is to use a light emitting element capable of preventing destruction of the element due to static electricity without increasing an occupied space and mounting process by adding additional components, and using the light emitting element An object of the present invention is to provide a light emitting device.
[0009]
[Means for Solving the Problems]
In order to solve the above problems, in the present invention, in a light-emitting element in which a semiconductor light-emitting element formed using a compound semiconductor film is formed on a substrate, the film-like anode electrode or film-like cathode is formed on the semiconductor light-emitting element. A thin film capacitor using electrodes is provided, and the thin film capacitor and the semiconductor light emitting element are electrically connected in parallel. Since the thin film capacitor is electrically connected in parallel with the semiconductor light emitting device, it is possible to prevent electrostatic breakdown of the semiconductor light emitting device even if an abnormal high voltage pulse caused by static electricity is applied to the semiconductor light emitting device. It becomes. Since this thin film capacitor is formed on the same substrate so as to be in close contact with the semiconductor light emitting element, it is possible to reduce the size and cost.
[0012]
According to the invention of claim 1 , an N-type semiconductor layer, an active layer formed on the N-type semiconductor layer, a P-type semiconductor layer formed on the active layer, on a single crystalline substrate, In a light emitting device formed by forming a semiconductor light emitting device comprising a film-like anode electrode formed on the P-type semiconductor layer,
Comprising a thin film capacitor comprising said on the anode electrode and the insulating film and the transparent conductive film is laminated, the transparent conductive film light emitting element characterized in that it is connected to the N-type semiconductor layer is proposed.
[0013]
According to the invention of claim 2, in the invention of claim 1 , the insulating film is made of barium titanate, strontium titanate, SBT, BST, PZT, Ta ₂ O ₅ , Hf ₂ O ₅ , Al ₂ O ₃ , A light-emitting element that is a single layer film or a laminated film selected from SiO ₂ , Si ₃ N ₄ , Y ₂ O ₃ , Gd ₂ O ₃ , TiO ₂ , ZrO ₂ , and La ₂ O ₃ is proposed.
[0014]
According to the invention of claim 3, in the invention of claim 1 , a light emitting device is proposed in which the dielectric film has a relative dielectric constant of 20 or more.
[0015]
According to the invention of claim 4, in the invention of claim 1 , a light emitting device is proposed in which the insulating film is a dielectric material having a cubic perovskite structure.
[0016]
According to the invention of claim 5, in the invention of claim 1, wherein the transparent conductive film, ITO, ATO, FTO, AZO , In 2 O 3, SnO 2, ZnO, CdO, TiO 2, TiN, ZrN, HfN A light-emitting element that is a single layer film or a laminated film selected from Au, Ag, Pt, Cu, Pd, Al, and Cr is proposed.
[0017]
According to the invention of claim 6, in the invention of claim 1 , the anode electrode is an alloy material mainly containing any one element of Au, Ni, Pt, Ru, Ti, Pd, Mo, Rh, or A light-emitting element that is a compound material is proposed.
[0018]
According to the invention of claim 7, in the invention of claim 1 , a light-emitting element is proposed in which the semiconductor light-emitting element has a mesa shape with a side wall taper angle of 60 ° or less with respect to the substrate surface of the substrate. .
[0019]
According to the invention of claim 8, in the invention of claim 1 , the capacitance of the thin film capacitor is 50 pF or more, and the leakage current at a DC applied voltage of 4 V of the thin film capacitor is 1 × 10 ⁻⁵ A or less. A light emitting device is proposed.
[0020]
According to a ninth aspect of the present invention, there is proposed a light emitting device according to the first aspect , wherein the substrate is a sapphire substrate, and the semiconductor light emitting device is made of a group III nitride semiconductor.
[0021]
According to the invention of claim 10 , a light emitting device is proposed in which any one of the light emitting elements of claims 1 to 9 is incorporated as a light source.
[0022]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, an example of an embodiment of the present invention will be described with reference to the drawings.
[0023]
FIG. 1 is a sectional view showing an example of an embodiment of a light emitting device according to the present invention. The light-emitting element 1 is obtained by forming a semiconductor light-emitting element on a single crystal substrate 2. The semiconductor light-emitting element is obtained by using an appropriate vapor phase growth method such as a metal organic thermal decomposition method (MOCVD method). It can be manufactured by laminating compound semiconductor single crystal thin film layers, and other necessary insulating films, electrode films, etc. can be formed by using known appropriate means.
[0024]
On the substrate 2, the N-type semiconductor layer 3, the active layer 4, and the P-type semiconductor layer 5 are formed in this order. The semiconductor light emitting device K including these three layers is etched into a mesa shape. Here, a part of the N-type semiconductor layer 3 is a thinner electrode forming portion 3A, and a side wall portion adjacent to the electrode forming portion 3A is a tapered surface 3B having a side wall taper angle θ. . Here, the side wall taper angle θ is the illustrated angle with respect to the substrate surface 2 </ b> A of the substrate 2. The tapered surface 3B extends not only to the N-type semiconductor layer 3, but also to the active layer 4 and the P-type semiconductor layer 5 formed thereon.
[0025]
An anode electrode 6 for electrically connecting the P-type semiconductor layer 5 to an external circuit is formed on the P-type semiconductor layer 5. The anode electrode 6 is formed in a thin film shape on the P-type semiconductor layer 5. On the other hand, a cathode electrode 7 for electrically connecting the N-type semiconductor layer 3 to an external circuit is formed on the electrode forming portion 3A of the N-type semiconductor layer 3. The cathode electrode 7 is also formed in a thin film shape on the electrode forming portion 3A.
[0026]
The semiconductor light emitting device K configured as described above on the substrate 2 applies a voltage between the anode electrode 6 and the cathode electrode 7 with a required polarity, so that the N-type semiconductor layer 3 changes to the active layer 4. Electrons are injected, holes are injected from the P-type semiconductor layer 5 into the active layer 4, and light is emitted by recombination of these electrons and holes in the active layer 4.
[0027]
A thin film capacitor 8 having the anode electrode 6 as one electrode is formed on the anode electrode 6. The thin film capacitor 8 is formed on the anode electrode 6, and a transparent conductive film 10 is further formed on the insulating film 9, and the insulating film 9 is sandwiched between the conductive film 10 and the anode electrode 6. A thin capacitor is used, and the conductive film 10 is the other electrode of the thin film capacitor 8.
[0028]
The thin film capacitor 8 is provided for the purpose of effectively preventing the semiconductor light emitting element from being electrostatically damaged even when a high voltage is applied between the anode electrode 6 and the cathode electrode 7 due to the action of static electricity. Is.
[0029]
In order to connect the thin film capacitor 8 electrically in parallel with the semiconductor light emitting device, the conductive film 10 is extended to the cathode electrode 7 along the tapered surface 3B, and the end portion 10A of the conductive film 10 is the cathode electrode 7. Are in an electrically connected state. In the present embodiment, the insulating film 9 is formed so as to extend to the tapered surface 3B, and covers the end 6A of the anode electrode 6 and the tapered surface 3B. As a result, the conductive film 10 is electrically maintained in a required insulating state from the active layer 4, the P-type semiconductor layer 5, and the anode electrode 6.
[0030]
Thus, the thin film capacitor 8 formed by laminating the anode electrode 6, the insulating film 9, and the conductive film 10 is electrically connected to the anode electrode 6 and the cathode electrode 7, and the thin film capacitor 8 and the semiconductor light emitting element are connected. Since K is connected in parallel, generation of a high voltage between the anode electrode and the cathode electrode due to static electricity can be effectively suppressed, and electrostatic breakdown of the semiconductor light emitting element K can be effectively prevented. Can do.
[0031]
Since the thin film capacitor 8 is formed on the substrate 2 as described above so as to be in close contact with the semiconductor light emitting element K using a semiconductor manufacturing process, the space for the thin film capacitor 8 is very small, There is no need for a component mounting process. For this reason, it is possible to reduce the size and eliminate the need for a mounting process of additional components, thereby realizing a small-sized and low-cost light-emitting element.
[0032]
The semiconductor light emitting element K formed on the substrate 2 can be configured using a crystalline semiconductor film made of a group 3 nitride semiconductor. In this case, the substrate 2 is preferably a sapphire substrate, a SiC substrate, or a Si substrate. The N-type semiconductor layer 3 can be formed using Si-doped GaN, the active layer 4 can be formed using GaN and InGaN quantum well structures, and the P-type conductive layer 5 can be formed using Mg-doped GaN. Of course, the present invention is not limited to this configuration. For example, the present invention can be applied to a case where the substrate 2 is a GaAs substrate or an InP substrate and a semiconductor light emitting device having a crystalline semiconductor film of InAlGaPAs is formed on this substrate. Can do.
[0033]
In the present invention, the P-type conductive layer is composed of P-type cladding layer / low-concentration doped P-type layer / high-concentration doped P-type layer (contact layer) (for example, disclosed in JP-A-2001-148507). It is also possible to adopt a configuration. In this case, since the lightly doped P-type layer increases the series resistance of the LED element, the LED operating voltage is slightly higher, but a countermeasure for preventing damage due to static electricity is applied twice, and the LED element is more excellent in electrostatic resistance. Can be.
[0034]
The materials for the anode electrode 6 and the cathode electrode 7 may be selected from materials that form ohmic junctions with the respective conductive semiconductor films. When the semiconductor film is a group III nitride semiconductor, a good ohmic junction can be obtained by making the anode electrode AuNi and the cathode electrode TiAl. In addition, the anode electrode can be formed by using an alloy material or a compound material whose main component is any one element of Au, Ni, Pt, Ru, Ti, Pd, Mo, and Rh.
[0035]
The material of the insulating film 9 can satisfy the following conditions: low absorption at the emission wavelength, high dielectric constant so that the capacitance can be maximized, and minimal leakage current when operating the semiconductor light emitting device. Choose one. For example, barium titanate, strontium titanate, SBT, BST, PZT, Ta ₂ O ₅ , Hf ₂ O ₅ , Al ₂ O ₃ , SiO ₂ , Si ₃ N ₄ , Y ₂ O ₃ , Gd ₂ O ₃ , TiO ₂ , ZrO ₂ , La ₂ O _{3 and the} like are suitable as the material of the insulating film 9. Here, the insulating film 9 can be a single layer film or a laminated film selected from these materials. Furthermore, the insulating film 9 is preferably a dielectric material having a cubic perovskite structure.
[0036]
The material of the transparent conductive film 10 includes ITO, ATO, FTO, AZO, In ₂ O ₃ , SnO ₂ , ZnO, CdO, TiO ₂ , TiN, ZrN, HfN, Au, Ag, Pt, Cu, Pd, Al , Cr and the like are preferable. Here, the transparent conductive film 10 can be a single layer film or a laminated film selected from these materials.
[0037]
FIG. 2 is a sectional view showing a modification of the embodiment of the present invention shown in FIG. 2 corresponding to those in FIG. 1 are denoted by the same reference numerals. In the light emitting element 20 shown in FIG. 2, a transparent conductive film 10 ′ constituting the other electrode of the thin film capacitor 8 is extended to the electrode forming portion 3A along the tapered surface 3B. 'A differs from the light emitting device 1 shown in FIG. 1 only in that A also serves as a cathode electrode used to connect the N-type semiconductor layer 3 to an external circuit.
[0038]
According to this configuration, it is not necessary to separately form the cathode electrode 7 and the transparent conductive film 10 in FIG. 1, and it is only necessary to form the transparent conductive film 10 ′, so that the manufacturing process can be further simplified. it can.
[0039]
FIG. 3 is a cross-sectional view showing another embodiment of the present invention. 3 corresponding to those in FIG. 1 are denoted by the same reference numerals. In the light emitting element 30 shown in FIG. 3, a thin film capacitor 31 is formed on the cathode electrode 7 in the same manner as the thin film capacitor 8 of FIG. That is, the thin film capacitor 31 has a configuration in which a transparent conductive film 33 is further formed on the insulating film 32 formed on the cathode electrode 7 and the insulating film 32 is sandwiched between the conductive film 33 and the cathode electrode 7. The cathode electrode 7 is one of the electrodes, and the conductive film 33 is the other electrode.
[0040]
The insulating film 32 extends to the upper end 3Ba above the N-type semiconductor layer 3 along the tapered surface 3B. On the other hand, the transparent conductive film 33 also extends along the tapered surface 3B along the tapered surface 3B along the tapered surface 3B, and further extends from the upper end portion 3Ba to the P-type semiconductor layer 5. The end portion 33A of the conductive film 33 formed on the P-type semiconductor layer 5 is configured to function as an anode electrode for electrically connecting the P-type semiconductor layer 5 to an external circuit.
[0041]
According to the light emitting element 30, since only the transparent conductive film 33 is formed on the P-type semiconductor layer 5, the external light emission efficiency can be improved as compared with the configuration shown in FIGS. In addition, since it is not necessary to form the anode electrode in a separate process, the number of processes can be simplified, which helps to reduce costs. Furthermore, since the thin film capacitor 31 is provided on the flange portion of the tapered surface 3B, the entire thickness of the light emitting element 30 can be reduced.
[0042]
In any of the above embodiments, the height difference between the ridge and the top of the tapered surface 3B may be 1 μm or more. In the case where an insulating film or a transparent conductive film is formed on the step portion having such a height difference by vapor deposition, sputtering, CVD, etc., if they are thin films, the step is not formed when the side wall taper angle θ is 60 ° or more. There may be cases where the coating cannot be completed. In that case, problems such as disconnection of the transparent conductive film and a short circuit between the transparent conductive film and the semiconductor layer may occur in the collar portion. Therefore, the taper angle θ of the taper surface 3B is desirably 60 ° or less.
[0043]
Furthermore, if the capacitor capacity of the thin film capacitors 8 and 31 is too small, the effect of preventing electrostatic breakdown cannot be sufficiently exhibited. On the other hand, if the leakage current of the thin film capacitors 8 and 31 is too large, the power consumption of the light emitting element is increased, which is not desirable. Therefore, it is desirable that the capacitance is 50 pF or more and the leakage current at a DC applied voltage of 4 V is 1 × 10 ⁻⁵ A or less.
[0044]
Next, the relationship between securing the capacity of the thin film capacitor configured as described above and the dielectric breakdown of the insulating film will be described. As is well known, the capacitance C of a dielectric capacitor is
C = ε′ε ₀ (S / t)
ε ′: relative dielectric constant ε ₀ : vacuum dielectric constant (8.85E-12F / m)
S: capacitor area t: dielectric film thickness (distance between electrodes)
It is expressed. For example, the light emission partial area per chip of the GaN-based blue LED (approximately equal to the anode electrode area) is about 200 μm × 200 μm. Assume that a capacitor having a design capacity of 600 pF is formed with a capacitor having an area of 200 μm × 200 μm. Increasing the capacitor area simply increases the capacitance, but the capacitor occupation area also increases, which is not desirable.
[0045]
FIG. 4 is a graph showing the relationship between the dielectric constant of the dielectric and the film thickness at which the capacitor is 600 pF. FIG. 5 is a graph showing the relationship between the dielectric film thickness and the electric field strength, and shows the electric field strength at a DC voltage of 4V. The graph shown in FIG. 4 shows that in order to increase the capacitance of the capacitor to 600 pF or more, the dielectric film thickness can be increased as the relative dielectric constant is increased, and the dielectric film thickness must be decreased as the relative dielectric constant is decreased. Is shown. Further, the graph shown in FIG. 5 shows that when the operating voltage 4V of the LED is applied between the electrodes of the capacitor, the thicker the dielectric film, the weaker the electric field strength, and the thinner the dielectric film, the stronger the electric field strength. ing. From these graphs, it can be seen that the higher the dielectric constant, the thicker the dielectric film thickness for achieving the design capacity, and the smaller the electric field strength applied to the film thickness during LED operation.
[0046]
On the other hand, when the relative dielectric constant is 20 or less, the film thickness must be 118 mm or less in order to obtain 600 pF. Such a thin film has an electric field strength of 3.4 MV / cm or more. When such an electric field strength is applied for a long time, most insulating films cause dielectric breakdown. Also, the controllability of the film thickness becomes more difficult as the film becomes thinner. Therefore, in this case, it is preferable that the dielectric constant of the insulating layer is greater than 20.
[0047]
FIG. 6 is a cross-sectional view illustrating an example of an embodiment of a light emitting device configured using the light emitting element 1 illustrated in FIG. 1. In the light emitting device 40, the light emitting element 1 shown in FIG. 1 is fixed on a pedestal portion 42 formed integrally with the inner end of the first lead frame 41. The second lead frame 43 is provided so as to be substantially parallel to the first lead frame 41, and the cathode electrode 7 of the light emitting element 1 is electrically connected to the pedestal portion 42 by the first connection conductor 44. The anode electrode 6 serves as the second connection conductor 45 and is electrically connected to the second lead frame 43. The inner ends of the first lead frame 41 and the second lead frame 43 are sealed with a transparent thermosetting resin 46.
[0048]
Therefore, light emission is obtained in the light emitting element 1 by applying a voltage between the first lead frame 41 and the second lead frame 43, and the light from the light emitting element 1 passes through the transparent thermosetting resin 46 to the outside. To be released. Since the capacitor for preventing electrostatic breakdown is previously incorporated as a thin film capacitor in the light emitting element 1, it is not necessary to add external parts and the assembly process is not complicated. Further, since the light-emitting element 1 has a configuration in which a thin film capacitor is connected in parallel with the semiconductor light-emitting element, it is not necessary to increase the drive voltage applied between the first lead frame 41 and the second lead frame 43. It can be driven and consumes less power.
[0049]
【Example】
One embodiment of the present invention will be described below, but the present invention is not limited thereto.
[0050]
A light-emitting element having the structure shown in FIG. 1 was manufactured as follows. A sapphire substrate is used as the substrate 2, and an Si-doped GaN is formed as an N-type semiconductor layer 3, an GaN / InGaN multiple quantum well as an active layer 4, and an Mg-doped GaN as a P-type semiconductor layer 5 on the sapphire substrate by MOCVD. A blue light emitting diode element was formed. A thin film capacitor using a barium titanate film formed by spin coating as a dielectric was formed on the blue light emitting diode element, and the blue light emitting diode element and the thin film capacitor were electrically connected in parallel. The capacitance of the thin film capacitor was 260 pF.
[0051]
FIG. 7 is a circuit diagram for testing the resistance of the light emitting element to electrostatic discharge. Here, Vo is a variable DC power supply, Rp and R are resistors, C is a capacitor, and Sw is a changeover switch. The test was conducted as follows. The machine model (R = 0Ω, C = 200 pF) was used for electrostatic discharge to the light emitting element 1 from an electrostatically charged device or jig. The voltage of the variable DC power supply Vo in FIG. 7 is set to a certain value, the changeover switch Sw is switched as indicated by a solid line, and the capacitor C is charged via the resistor Rp, and then the changeover switch Sw is indicated by a dotted line. Then, the light emitting element 1 is discharged. After repeating this three times, the voltage-current characteristics of the blue light emitting diode element were evaluated. It is possible to determine whether or not the element is destroyed by changing the voltage-current characteristic of the blue light emitting diode element.
[0052]
In a blue light emitting diode element having a conventional structure, 50% of the elements tested at 60 V were destroyed. On the other hand, in the example in which a 260 pF thin film capacitor was connected in parallel to the blue light emitting diode element, 50% of the elements were destroyed at 150V. That is, it was confirmed that the breakdown voltage leading to electrostatic breakdown was improved by 90V.
[0053]
【The invention's effect】
According to the present invention, it is possible to prevent destruction of a semiconductor light emitting element due to static electricity, and the light emitting element and the light emitting element can be used as a light source without increasing an occupied space by adding an additional part or increasing a mounting process. The light emitting device incorporated as can be provided.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view illustrating an example of an embodiment of a light-emitting element according to the present invention.
FIG. 2 is a cross-sectional view showing a modification of the embodiment shown in FIG.
FIG. 3 is a cross-sectional view showing another embodiment of a light emitting device according to the present invention.
FIG. 4 is a graph showing the relationship between the relative dielectric constant of a dielectric and the film thickness at which the capacitor is 600 pF.
FIG. 5 is a graph showing the relationship between dielectric film thickness and electric field strength.
FIG. 6 is a cross-sectional view illustrating an example of an embodiment of a light-emitting device according to the present invention.
FIG. 7 is a circuit diagram for testing the resistance of the light emitting element to electrostatic discharge.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1, 20, 30 Light emitting element 2 Substrate 3 N type semiconductor layer 3A Electrode formation part 3B Tapered surface 4 Active layer 5 P type semiconductor layer 6 Anode electrode 7 Cathode electrode 8 Thin film capacitor 9, 32 Insulating film 10, 33 Conductive film θ Side wall taper angle K Semiconductor light emitting device

Claims (10)

On a single crystalline substrate, an N-type semiconductor layer, an active layer formed on the N-type semiconductor layer, a P-type semiconductor layer formed on the active layer, and formed on the P-type semiconductor layer In a light emitting device formed by forming a semiconductor light emitting device comprising a film-like anode electrode formed,
A light emitting device comprising a thin film capacitor in which an insulating film and a transparent conductive film are laminated on the anode electrode, wherein the transparent conductive film is connected to the N-type semiconductor layer. The insulating film is made of barium titanate, strontium titanate, SBT, BST, PZT, Ta ₂ O _Five , Hf ₂ O _Five , Al ₂ O _Three , SiO ₂ , Si _Three N _Four , Y ₂ O _Three , Gd ₂ O _Three TiO ₂ , ZrO ₂ , La ₂ O _Three The light emitting device according to claim 1, wherein the light emitting device is a single layer film or a laminated film selected from the group consisting of: The light emitting device according to claim 1, wherein the insulating film has a relative dielectric constant of 20 or more. The light emitting device according to claim 1, wherein the insulating film is a dielectric material having a cubic perovskite structure. The transparent conductive film is made of ITO, ATO, FTO, AZO, In ₂ O _Three , SnO ₂ ZnO, CdO, TiO ₂ The light emitting device according to claim 1, which is a single layer film or a laminated film selected from TiN, ZrN, HfN, Au, Ag, Pt, Cu, Pd, Al, and Cr. The light-emitting element according to claim 1, wherein the anode electrode is an alloy material or a compound material mainly containing any one element of Au, Ni, Pt, Ru, Ti, Pd, Mo, and Rh. The light-emitting element according to claim 1, wherein the semiconductor light-emitting element has a mesa shape with a side wall taper angle of 60 ° or less with respect to the substrate surface of the substrate. The capacitance of the thin film capacitor is 50 pF or more, and the leakage current of the thin film capacitor at a DC applied voltage of 4 V is 1 × 10 ^-Five The light emitting device according to claim 1, which is A or less. The light-emitting element according to claim 1, wherein the substrate is a sapphire substrate, and the semiconductor light-emitting element is made of a group III nitride semiconductor. A light-emitting device in which any one of the light-emitting elements according to claim 1 is incorporated as a light source.

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