KR100946593B1 - Career plate and manufacturing method thereof - Google Patents

Career plate and manufacturing method thereof Download PDF

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Publication number
KR100946593B1
KR100946593B1 KR1020090046905A KR20090046905A KR100946593B1 KR 100946593 B1 KR100946593 B1 KR 100946593B1 KR 1020090046905 A KR1020090046905 A KR 1020090046905A KR 20090046905 A KR20090046905 A KR 20090046905A KR 100946593 B1 KR100946593 B1 KR 100946593B1
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KR
South Korea
Prior art keywords
silicon layer
metal plate
silicon
holes
carrier plate
Prior art date
Application number
KR1020090046905A
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Korean (ko)
Inventor
김기광
Original Assignee
유한회사 디알텍
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Priority to KR1020090046905A priority Critical patent/KR100946593B1/en
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Publication of KR100946593B1 publication Critical patent/KR100946593B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67333—Trays for chips
    • H01L21/67336—Trays for chips characterized by a material, a roughness, a coating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting substrates others than wafers, e.g. chips

Abstract

The present invention relates to a carrier plate and a method of manufacturing the same so that the silicon layer of the adsorption region attached to the device can be firmly bonded to the metal plate, thereby minimizing the separation of the silicon layer from the metal plate. The disclosed carrier plate includes a metal plate material having a plurality of through holes formed in a thickness direction, and a silicon layer formed to cover both surfaces of the metal plate material and an inner surface of the through hole, and having a support hole for supporting an electronic device in the through hole portion. And an element support region in which support holes are formed, and an adsorption region provided around the element support region so as to be adsorbed and supported by the device, wherein the adsorption region is filled with a joint reinforcing hole penetrated in the thickness direction of the metal sheet, It includes a silicon connector for connecting the silicon layer on both sides.

Description

Carrier plate and its manufacturing method {CAREER PLATE AND MANUFACTURING METHOD THEREOF}

The present invention relates to a carrier plate for supporting an electronic device, and more particularly, to a carrier plate and a method of manufacturing the same to minimize the phenomenon that the silicon layer is separated from the metal plate during use.

The carrier plate is a process of forming a contact by dipping the terminals of Miniature Electronic Components such as Chip Capacitor, Register, and Multi-layered Ceramic Capacitor (MLCC). Used to support a large number of electronic devices.

As disclosed in Japanese Unexamined Patent Publication No. 2009-39850, a conventional carrier plate has a plurality of through-holes formed in a thickness direction so as to support a plurality of electronic devices at the same time, and each through-hole supports an electronic device. The silicon layer for this is formed. That is, the silicon layer provided with the support hole in which the electronic element is inserted and supported in each through-hole of a metal plate material is provided.

When manufacturing the carrier plate, the metal plate is cut to process a plurality of through holes, and then a silicon layer is formed in such a manner that silicon is filled in both surfaces and the plurality of through holes of the metal plate. Support holes for supporting the electronic device are to be molded in the molding process of the silicon layer.

The carrier plate is mounted on a dipping facility for terminal coating of electronic devices. When the carrier plate is mounted on the device, the edge of the silicon layer (edge portion where no through hole is formed) is usually vacuum-adsorbed. Attached to the appliance.

However, since the carrier plate is a form in which the silicon layers on both sides of the metal plate are attached only to both sides of the metal plate, the edge of the silicon layer vacuum-adsorbed to the device is frequently metalized when the carrier plate is repeatedly attached to the dipping equipment due to frequent use. There was a problem of separation from the plate. When the silicon layer in the adsorption region is separated from the metal plate, there is a problem in that the carrier plate can not be used until its lifetime, resulting in a large cost loss.

The present invention is to solve this problem, an object of the present invention is to ensure that the silicon layer of the adsorption region attached to the device is firmly bonded to the metal plate material to minimize the phenomenon that the silicon layer is separated from the metal plate material And to provide a method for producing the same.

Carrier plate according to the present invention for achieving the above object is formed to cover the inner surface of the through-hole and the metal plate member and a plurality of metal plate member formed with a plurality of through holes in the thickness direction, the through hole portion to support the electronic device And a silicon layer having a support hole formed therein, wherein the carrier plate includes an element support region in which the support holes are formed, and an adsorption region provided around the element support region so as to be adsorbed and supported by the device. It characterized in that it comprises a coupling reinforcing hole penetrated in the thickness direction of the metal plate, and a silicon connection portion filled in the coupling reinforcing hole to connect the silicon layer on both sides of the metal plate.

The coupling reinforcing hole is formed by clustering a plurality of spaced apart from each other in the adsorption region, the silicon connection portion is characterized in that it is provided integrally with the silicon layer.

The method of manufacturing a carrier plate according to the present invention includes a cutting process of cutting a metal plate and forming a plurality of through holes for supporting an electronic device in the cut metal plate, and at the same time the carrier plate is adsorbed and supported by the device. A punching process for forming bonding reinforcing holes, an adhesive strengthening agent applying step of applying an adhesive strengthening agent to both sides of the metal plate material which has been subjected to the drilling process, and a support hole on both surfaces of the metal plate member and the through holes coated with the adhesive strengthening agent; A silicon forming process for forming a silicon connection in the bonding reinforcement holes, a foreign material washing process for removing foreign matters attached to the silicon layer, and a polishing process for polishing the surface of the silicon layer. Include.

The adhesive strengthening step is performed by repeatedly applying a coating process for applying the adhesive strengthening agent to the molding area of the silicon layer by a silk printing method, and a drying step of drying the applied adhesive strengthening agent at a temperature of 65 to 75 ° C. for a predetermined time. It is characterized by.

The silicon molding process includes the steps of injecting the metal plate material coated with the adhesive strengthening agent into the molding space of the mold, and injecting the liquid silicone mixed with a curing agent into the molding space of the mold to form the silicon layer; And curing the silicon layer at 135 to 145 ° C. for a predetermined time, and taking out the metal plate material after curing the silicon layer.

The carrier plate according to the present invention has an adsorption region provided around the element support region so as to be adsorbed and supported by a device such as a dipping facility, and the adsorption region is filled with a bonding reinforcement hole and the bonding reinforcing hole to connect the silicon layers on both sides of the metal plate. Since the silicon connection portion is provided, the silicon layer of the adsorption region can be firmly bonded to both sides of the metal sheet. Therefore, even when the carrier plate is repeatedly attached to the dipping equipment due to frequent use of the carrier plate, there is an effect of minimizing the phenomenon that the silicon layer of the adsorption area is separated from the metal plate material.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a perspective view of a carrier plate according to the present invention, FIG. 2 is a plan view of a carrier plate according to the present invention, and FIG. 3 is a cross-sectional view taken along line III-III ′ of FIG. 1. As illustrated, the carrier plate 10 includes a metal plate 20 having a plurality of through holes 21 formed therein in a thickness direction to support electronic devices (not shown) such as a multilayer ceramic capacitor (MLCC), and a metal. Silicon layer 30 formed to cover both sides of the plate 20 and the inner surface of the plurality of through holes 21.

In addition, as shown in FIGS. 1 and 2, the carrier plate 10 according to the present exemplary embodiment may perform a dipping process for coating an electronic device and an element support region A on which electronic devices are supported. At this time, the carrier plate 10 is provided with an adsorption region B provided separately around the element support region A so that the carrier plate 10 can be attached to a device such as a dipping apparatus.

As shown in FIG. 3, through holes 21 are formed in the metal plate 20 so as to support electronic devices in the element support region A, and support holes 31 are formed on the inner surface of the through holes 21. ), A silicon layer 30c is formed. Since the support hole 31 formed by the silicon layer 30c may be stretched and contracted by elastic deformation, electronic devices may be inserted and supported in the support hole 31.

The adsorption area B is provided around the element support area A. FIG. In this embodiment, as shown in FIG. 2, the case where the adsorption region B is provided in the center portion that divides the edge portion of the carrier plate 10 and the element support regions A on both sides is illustrated. The position of B) is not limited to this because it can be changed according to the design of the carrier plate.

As shown in FIG. 3, the adsorption area B includes a plurality of metal plates 20 penetrated in the thickness direction of the metal plate 20 so that the silicon layers 30a and 30b on both sides of the metal plate 20 can be firmly bonded to the metal plate. And a silicon connector 32 filled in the coupling reinforcing hole 22 to connect the coupling reinforcing hole 22 and the silicon layers 30a and 30b on both sides of the metal plate 20. This is because when the silicon layers 30a and 30b are formed on both sides of the metal sheet 20, the silicon flows into the coupling reinforcing holes 22 and is molded to form the silicon layers 30a and 30b on both sides of the metal sheet 20. Through (32) it is to be firmly combined in an integrated form. As shown in FIG. 2, the coupling reinforcing holes 22 and the silicon connecting portions 32 are provided in a plurality of groups in the adsorption region B so as to be spaced apart from each other, thereby forming the silicon layers 30a and 30b of the adsorption region B. ) To be firmly coupled to both sides of the metal plate (20).

As described above, the carrier plate 10 according to the present embodiment is firmly bonded by the silicon layers 30a and 30b of the adsorption region B by the silicon connecting portions 32, and thus the carrier plate 10 may be frequently used. Even when 10) is repeatedly attached to the dipping equipment, the phenomenon that the silicon layers 30a and 30b of the adsorption region B are separated from the metal plate 20 can be minimized. The adsorption region B can prevent the silicon layer from being separated until the silicon layer of the element support region A is worn or damaged and becomes no longer usable (until the end of life). Therefore, the user using the same may provide an advantage in terms of cost.

When manufacturing the carrier plate 10, as shown in Figure 4, the metal plate material cutting step 41 of cutting the metal plate material 20 in accordance with the product specifications, the element support region (A) of the metal plate material 20 An adhesive strengthening agent is applied to both sides of the metal plate 20 prior to the forming of the silicon layer 30, and the drilling process 42 for drilling the coupling reinforcing holes 22 of the through-holes 21 and the adsorption region B located therein. Bonding reinforcing process (43) to apply, forming the silicon layer (30a, 30b, 30c) having a support hole 31 on both sides of the metal plate 20 and the inner surface of the through-holes (21) and bonding reinforcement ( 22, a silicon forming step 44 for molding the silicon connection portion 32, a foreign material washing step 45 for removing foreign matter from the silicon layer 30, and a polishing step 46 for polishing the surface of the silicon layer.

The drilling process 42 for forming the through holes 21 and the coupling reinforcing holes 22 in the metal plate 20 is performed by a conventional etching process followed by pretreatment, masking, exposure, development, etching, and peeling. Of course, such a drilling process 42 may also be made by cutting by pressing or multi-axis drill. After the perforation of the metal plate 20, a plating process may be added as necessary.

The adhesive strengthening step 43 is a coating step of applying a so-called primer to the area where the silicone layer 30 is formed by a silk printing method, and applying the applied adhesive enhancer in an oven with 65-75 ° C. hot air. Drying process for approximately 10 minutes. In this case, the coating step and the drying step are repeated several times.

In the silicon molding process 44, the step of injecting the metal plate material 20 coated with the adhesive strengthening agent into the molding space of the mold, and injecting the liquid silicone mixed with the curing agent into the molding space of the mold, molding the silicon layer 30. The step of curing the molded silicon layer 30 at 135 ~ 145 ° C for a predetermined time, and the step of taking out the carrier plate from the mold after the silicon layer 30 is cured. Since the mold has a plurality of pin-shaped cores that enter the through holes 21 when the metal plate 20 is placed in the molding space, the support holes 31 may be molded in the molding process. In addition, since silicon is introduced into the coupling reinforcing hole 22 of the adsorption region B in the forming process, the silicon layers 30a and 30b and the silicon connecting portions 32 on both sides of the metal plate 20 are integrally formed.

The foreign material washing process 45 removes foreign matter remaining in the silicon layer 30 by spraying high pressure water onto the molded silicon layer 30. Part of the burr formed during the molding of the silicon layer 30 is also removed at this time.

In the polishing process 46, the upper and lower surfaces of the silicon layer 30 are polished by rotating polishing members to uniform the thickness of the silicon layers 30a and 30b, thereby increasing the flatness of the silicon layer surface. At this time, since the burr etc. which exist in the support hole 31 side are removed, the support hole 31 can be processed finely.

1 is a perspective view of a carrier plate according to the present invention.

2 is a plan view of a carrier plate according to the invention.

3 is a cross-sectional view taken along line III-III ′ of FIG. 1.

4 is a process chart showing a manufacturing process of a carrier plate according to the present invention.

Explanation of symbols on the main parts of the drawings

10: carrier plate, 20: metal plate,

21: through hole, 22: joint strengthener,

30: silicon layer, 31: support hole,

32: silicon connection, A: device support region,

B: adsorption zone.

Claims (5)

A carrier plate including a metal plate having a plurality of through holes formed in a thickness direction, and a silicon layer having both surfaces of the metal plate and covering the inner surface of the through hole, and having a support hole in the through hole for supporting an electronic device. In The carrier plate includes an element support region in which the support holes are formed, and an adsorption region provided around the element support region so as to be supported by the device. The adsorption region includes a coupling reinforcing hole penetrating in the thickness direction of the metal plate, and a silicon connection part filled in the coupling reinforcing hole to connect silicon layers on both sides of the metal plate. The method of claim 1, The coupling reinforcing hole is formed by crowding a plurality of spaced apart state in the adsorption region, The silicon connection portion is a carrier plate, characterized in that provided integrally with the silicon layer. A cutting process of cutting the metal sheet; Forming a plurality of through holes for supporting the electronic device on the cut metal plate and simultaneously forming strengthening holes in the region where the carrier plate is adsorbed and supported by the device; An adhesive strengthening agent applying step of applying an adhesive strengthening agent to both surfaces of the metal sheet having undergone the drilling process; A silicon molding process of forming a silicon layer having support holes on both sides of the metal plate member and the through holes coated with the adhesive strengthening agent, and simultaneously forming a silicon connection part in the joint reinforcing holes; A foreign material washing step of removing foreign substances attached to the silicon layer; And a polishing step of polishing the surface of the silicon layer. The method of claim 3, The adhesive strengthening step is performed by repeatedly applying a coating process for applying the adhesive strengthening agent to the molding area of the silicon layer by a silk printing method, and a drying step of drying the applied adhesive strengthening agent at a temperature of 65 to 75 ° C. for a predetermined time. Method for producing a carrier plate, characterized in that. The method of claim 3, The silicon molding process includes the steps of injecting the metal plate material coated with the adhesive strengthening agent into the molding space of the mold, and injecting the liquid silicone mixed with a curing agent into the molding space of the mold to form the silicon layer; And curing the silicon layer at 135 to 145 ° C. for a predetermined time, and taking out the metal plate material after curing the silicon layer.
KR1020090046905A 2009-05-28 2009-05-28 Career plate and manufacturing method thereof KR100946593B1 (en)

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101177564B1 (en) 2012-04-03 2012-08-27 (주)한올페이 Guide pin array device and method of manufacturing the same
KR101224720B1 (en) 2011-11-21 2013-01-21 삼성전기주식회사 Carrier plate
KR101251932B1 (en) * 2011-10-27 2013-04-08 유한회사 디알텍 Career plate
KR101258162B1 (en) 2011-01-13 2013-04-25 (주)에이피텍 Unit and Method for Transferring of LED Chip
KR200471175Y1 (en) * 2013-09-12 2014-02-07 서경성 Cleaning dummy of mold for semiconductor
CN103915349A (en) * 2012-12-28 2014-07-09 三星电机株式会社 Bearing plate for manufacturing semiconductor chip
KR20200042796A (en) * 2018-10-16 2020-04-24 주식회사 루멘스 Method for arraying micro LED chips for manufacturing a LED display and a multi-chip carrier

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06176989A (en) * 1992-12-07 1994-06-24 Murata Mfg Co Ltd Holder for electronic-component chip
JP2005150418A (en) 2003-11-17 2005-06-09 Shin Etsu Polymer Co Ltd Retaining plate for coating external electrode of electronic component
JP2007180356A (en) 2005-12-28 2007-07-12 Arai Pump Mfg Co Ltd Carrier plate
JP2007207898A (en) 2006-01-31 2007-08-16 Arai Pump Mfg Co Ltd Carrier plate, and method of manufacturing same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06176989A (en) * 1992-12-07 1994-06-24 Murata Mfg Co Ltd Holder for electronic-component chip
JP2005150418A (en) 2003-11-17 2005-06-09 Shin Etsu Polymer Co Ltd Retaining plate for coating external electrode of electronic component
JP2007180356A (en) 2005-12-28 2007-07-12 Arai Pump Mfg Co Ltd Carrier plate
JP2007207898A (en) 2006-01-31 2007-08-16 Arai Pump Mfg Co Ltd Carrier plate, and method of manufacturing same

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101258162B1 (en) 2011-01-13 2013-04-25 (주)에이피텍 Unit and Method for Transferring of LED Chip
KR101251932B1 (en) * 2011-10-27 2013-04-08 유한회사 디알텍 Career plate
KR101224720B1 (en) 2011-11-21 2013-01-21 삼성전기주식회사 Carrier plate
KR101177564B1 (en) 2012-04-03 2012-08-27 (주)한올페이 Guide pin array device and method of manufacturing the same
CN103915349A (en) * 2012-12-28 2014-07-09 三星电机株式会社 Bearing plate for manufacturing semiconductor chip
KR101420540B1 (en) 2012-12-28 2014-07-16 삼성전기주식회사 Carrier plate for manufacturing semiconductor chip
KR200471175Y1 (en) * 2013-09-12 2014-02-07 서경성 Cleaning dummy of mold for semiconductor
KR20200042796A (en) * 2018-10-16 2020-04-24 주식회사 루멘스 Method for arraying micro LED chips for manufacturing a LED display and a multi-chip carrier
KR102646798B1 (en) * 2018-10-16 2024-03-13 주식회사 루멘스 Method for arraying micro LED chips for manufacturing a LED display and a multi-chip carrier

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