KR100943495B1

KR100943495B1 - Method for manufacturing semiconductor device

Info

Publication number: KR100943495B1
Application number: KR1020070137176A
Authority: KR
Inventors: 정순욱
Original assignee: 주식회사 동부하이텍
Priority date: 2007-12-26
Filing date: 2007-12-26
Publication date: 2010-02-22
Also published as: KR20090069490A

Abstract

A method for manufacturing a semiconductor device is provided. The method comprises stacking at least one insulating layer on top of a pad connected to a conductive region formed on a semiconductor substrate, forming a photoresist pattern on the top of the insulating layer for opening the pad, and Etching the insulating layer using the etching mask to open the pad, coating the photosensitive film on the top of the insulating layer including the open pad, and only the photosensitive film on the upper surface of the open pad of the coated photosensitive film as a protective film. Retaining and removing the remainder, coating a buffer protection film on the front surface of the protective film and the insulating layer, patterning the buffer protection film and leaving it on top of the insulating layer, and removing material remaining on the top of the opened pad. Characterized in that it comprises a step. The occurrence of abnormal surface reaction phenomenon of the aluminum pad can be prevented in advance, and the polyimide passivation process can be stably performed.

Semiconductor Devices, Pads, Open, Polyimide, Aluminum Corrosion

Description

Method for manufacturing semiconductor device

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to semiconductor devices, and more particularly, to a method for manufacturing a semiconductor device including a polyimide manufacturing process.

In the etching process of opening the pad PAD for wire bonding, polyimide is commonly used as a buffer in the packaging process and to protect the device from external particles.

Unlike the polyimide process, in which the aluminum pad is opened after the pattern is formed using the polyimide film, the polyimide process in which the aluminum pad is already open may cause severe corrosion on the aluminum surface.

Hereinafter, a polyimide manufacturing process in a conventional method of manufacturing a semiconductor device will be described with reference to the accompanying drawings.

1A to 1E are cross-sectional views showing a process by a conventional method for manufacturing a semiconductor device.

Referring to FIG. 1A, aluminum 6 and TiNs 4 formed above and below 6 form a pad 10. The insulating films 12 and 14 are sequentially stacked on the pad 10, and a photoresist pattern 16 for opening the pad 10 is formed on the insulating film 14. Referring to FIG. 1B, the pad 10A is obtained by etching the insulating layers 12 and 14 and the TiN 4 on the aluminum 6 using the photoresist pattern 16 as an etching mask. As shown in FIG. 1C, the photo register pattern 16 is removed. As shown in FIG. 1D, the polyimide film 16 is coded on the opened pad 10A and the insulating film 14. The polyimide film 16 is patterned as shown in FIG. 1E. As such, in the process of depositing the polyimide material 16, since the chemical solution reacts with the surface of the aluminum 6A that is already open, the surface of the aluminum pad 6A is severely corroded as shown in FIG. 1F. There is a problem that can occur.

The technical problem to be achieved by the present invention is to provide a passivation process for a pad, so that even if a polyimide film is used, a surface abnormality caused by a chemical reaction does not occur on the surface of a pad such as aluminum. It is to provide a manufacturing method.

In accordance with an aspect of the present invention, there is provided a method of fabricating a semiconductor device, the method comprising: forming at least one insulating layer on top of a pad connected to a conductive region formed on a semiconductor substrate, and forming the pad on the insulating layer; Forming a photoresist pattern for opening of the photoresist, using the photoresist pattern as an etch mask, etching the insulating layer to open the pad and removing the photoresist pattern, and the open pad Coating a photoresist film on top of the insulating layer, remaining only the photoresist film as a protective film on the upper surface of the open pad of the coated photoresist as a protective film, and removing the remainder; a buffer protection film on the entire surface of the protective film and the insulating layer Coating a pattern, patterning the buffer protection layer, and remaining the upper portion of the insulating layer; It is formed of a step of removing material remaining on top of the peundoen pad is preferred.

Since the method for manufacturing a semiconductor device according to the present invention covers the protective film on the open pad before forming the polyimide on the open pad, the aluminum pad caused by the integrated contact of the polyimide on the open pad as in the prior art is caused. The occurrence of anomalous reaction phenomenon on the surface can be prevented in advance, and the polyimide passivation process can be stably performed.

Hereinafter, with reference to the accompanying drawings, an embodiment of a method of manufacturing a semiconductor device according to the present invention will be described as follows.

2A to 2H are cross-sectional views illustrating a method of manufacturing a semiconductor device in accordance with an embodiment of the present invention.

Referring to FIG. 2A, at least one insulating layer 40 and 50 may be stacked on the pad 30 connected to the conductive region 20 formed on a semiconductor substrate (not shown). Here, in FIG. 2A, although the insulating layer is composed of two layers 40 and 50, the insulating layer may be provided as a single layer or as three or more layers. The insulating layer 40 may be formed of an oxide layer, and the insulating layer 50 may be formed of a nitride layer protecting the oxide layer 40. Thereafter, the photoresist pattern 60 for opening the pad 30 is formed on the insulating layer 50.

According to the present invention, the pad 30 may be formed of the first diffusion barrier layer 32, the metal layer 34, and the second diffusion barrier layer 36. That is, before forming the insulating layer 40, the first diffusion barrier 32, the metal layer 34, and the second diffusion barrier 36 may be sequentially stacked on the conductive region 20. . Each of the first and second diffusion barrier layers 32 and 36 may be made of TiN, and the metal layer 34 may be made of aluminum (Al).

Referring to FIG. 2B, using the photoresist pattern 60 as an etching mask, the insulating layers 50 and 40 are etched to open the pad 30, and the photoresist pattern 60 is removed by an ashing process. do.

When the pad 30 is formed of the first diffusion barrier layer 32, the metal layer 34, and the second diffusion barrier layer 36, the photoresist layer pattern 60 may be used as an etching mask as well as the insulating layers 40 and 50. The diffusion barrier layer 36 may be etched to open a metal layer 34A such as aluminum 34A of the pad 30. In this case, in an etching process for opening the pad 30, a portion of the upper portion of the metal layer 34 may be etched. The opened pad 30A may be formed of the first diffusion barrier layer 32, the metal layer 34A having the partially etched top surface, and the second diffusion barrier pattern 36A etched by the etching mask 60.

As shown in FIG. 2C, the photoresist 60 is formed by coating the photoresist 60 on the upper side of the insulating layer 50A and the inner side of the insulating layers 40A and 50A, including the opened pad 30A.

As shown in FIG. 2D, only the photoresist film is left as the protective film 60A on the upper surface of the opened pad 30A among the coated photoresist film 60 and the remaining photoresist film is removed. To this end, a descum process is performed on the photoresist layer 60 illustrated in FIG. 2C, so that the protective layer 60A remains only in the opened pad 30A and the remaining photoresist layer 60 is shown in FIG. 2D. Can be removed.

According to an embodiment of the present invention, in order to control the thickness of the protective film 60A, a dry etching process may be further performed on the resultant shown in FIG. 2D. For example, the thickness of the protective film 60A may be left at 3000 kPa or more.

As shown in FIG. 2E, the buffer protection film 70 is formed by coating the entire surface of the protective film 60A and the insulating layer 50A, that is, the top of the insulating layer 50A and the side surfaces of the insulating layers 40A and 50A. . Here, the buffer protection layer 70 may be polyimide. Unlike the related art, the polyimide 70 and the aluminum pad 34A do not contact each other because the protective film 60A is blocked.

Thereafter, the buffer protection film 70 is patterned to leave the patterned buffer protection film 70A on top of the insulating layer 50A.

For example, as shown in FIG. 2F, when the buffer protection film 70 is patterned, the material remaining on the opened pad 30A may be the photosensitive film 60A. That is, the protective film 60A can be opened by patterning the buffer protective film 70.

Alternatively, as shown in FIG. 2G, a portion of the buffer protection film 70B may be left on the photosensitive film 60A remaining on the open pad 30A. If the remaining buffer protection film 70B maintains a thickness of 5000 kPa, the subsequent treatment process is not significantly affected by the remaining buffer protection film 70B.

When the buffer protection film 70 is polyimide, the buffer protection film 70 is patterned as shown in FIG. 2F or 2G by using the difference in photosensitivity between the buffer protection film 70 and the photosensitive film 60A shown in FIG. 2E. The protective film 60A may be left on the pad 30A that is opened, or the buffer protective film 70B may be further left.

As shown in FIG. 2H, the material 60B or 62 remaining on top of the opened pad 30A is removed. For example, the material 60B or 62 remaining on the opened pad 30A may be removed using a decom process by oxygen (O ₂ ) gas. In this case, since the aluminum 34A is sufficiently open, subsequent test processes or bonding processes are not affected.

Since the descom process proceeds isotropically, as shown in FIG. 2H, the polyimide pattern 70C is somewhat widened laterally compared to the polyimide pattern 70A shown in FIG. 2F or 2G. However, the general passivation process is not affected by this somewhat wider width.

The present invention described above is not limited to the above-described embodiment and the accompanying drawings, and it is common in the art that various substitutions, modifications, and changes can be made without departing from the technical spirit of the present invention. It will be evident to those who have knowledge of.

1A to 1F are cross-sectional views showing a process by a conventional method for manufacturing a semiconductor device.

* Description of the main parts of the drawing

20: challenge area 30: pad

40, 50: insulation layer 60: photosensitive film pattern

60A: protective film 70: polyimide

Claims

Forming a pad including a first diffusion barrier layer, a metal layer, and a second diffusion barrier layer formed sequentially on the conductive region formed on the semiconductor substrate;

Stacking and forming at least one insulating layer on the second diffusion barrier layer;

Forming a photoresist pattern for opening the pad on the insulating layer;

Etching the upper portion of the insulating layer, the second diffusion barrier layer, and the metal layer by using the photoresist pattern as an etch mask to open the pad and remove the photoresist pattern;

Coating a photoresist film on top of the insulating layer, including the open pad;

Leaving only the photoresist as a protective film on the upper surface of the open pad of the coated photoresist and removing the rest;

Coating a buffer protection film on the entire surface of the protective film and the insulating layer;

Patterning the buffer passivation layer to remain on top of the insulating layer, or to remain on top of the insulating layer and on the passivation layer; And

And removing the material remaining on the opened pad.

The method of claim 1, wherein the material remaining on the opened pad is the photosensitive film.

The method of claim 1, wherein the remaining material on the opened pad is the photosensitive film and the buffer protection film.

The method of claim 1, wherein the material remaining on the opened pad is removed using a Descum process using oxygen gas.

The method of claim 1, wherein the buffer protection film is polyimide and the patterning of the buffer protection film is performed by using a difference in photosensitivity between the buffer protection film and the photosensitive film.

delete

The method of claim 1, wherein the semiconductor device is manufactured.

And adjusting the thickness of the protective film by an etching process.