KR100938044B1 - 불휘발성 메모리 장치 및 그 멀티 레벨 셀 프로그램 방법 - Google Patents

불휘발성 메모리 장치 및 그 멀티 레벨 셀 프로그램 방법 Download PDF

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Publication number
KR100938044B1
KR100938044B1 KR1020070114307A KR20070114307A KR100938044B1 KR 100938044 B1 KR100938044 B1 KR 100938044B1 KR 1020070114307 A KR1020070114307 A KR 1020070114307A KR 20070114307 A KR20070114307 A KR 20070114307A KR 100938044 B1 KR100938044 B1 KR 100938044B1
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KR
South Korea
Prior art keywords
cell
voltage
verify
verification
program
Prior art date
Application number
KR1020070114307A
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English (en)
Korean (ko)
Other versions
KR20090026710A (ko
Inventor
원삼규
차재원
백광호
Original Assignee
주식회사 하이닉스반도체
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 하이닉스반도체 filed Critical 주식회사 하이닉스반도체
Priority to US12/019,929 priority Critical patent/US7813188B2/en
Priority to JP2008049089A priority patent/JP2009070539A/ja
Priority to CN2011100977183A priority patent/CN102214484A/zh
Priority to CN2008100063876A priority patent/CN101388249B/zh
Publication of KR20090026710A publication Critical patent/KR20090026710A/ko
Application granted granted Critical
Publication of KR100938044B1 publication Critical patent/KR100938044B1/ko
Priority to US12/902,102 priority patent/US7948805B2/en

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
KR1020070114307A 2007-09-10 2007-11-09 불휘발성 메모리 장치 및 그 멀티 레벨 셀 프로그램 방법 KR100938044B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
US12/019,929 US7813188B2 (en) 2007-09-10 2008-01-25 Non-volatile memory device and a method of programming a multi level cell in the same
JP2008049089A JP2009070539A (ja) 2007-09-10 2008-02-29 不揮発性メモリ装置及びそのマルチレベルセルプログラム方法
CN2011100977183A CN102214484A (zh) 2007-09-10 2008-02-29 非易失性存储器件和对其中的多级单元进行编程的方法
CN2008100063876A CN101388249B (zh) 2007-09-10 2008-02-29 非易失性存储器件和对其中的多级单元进行编程的方法
US12/902,102 US7948805B2 (en) 2007-09-10 2010-10-11 Method of programming a multi level cell

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020070091543 2007-09-10
KR20070091543 2007-09-10

Publications (2)

Publication Number Publication Date
KR20090026710A KR20090026710A (ko) 2009-03-13
KR100938044B1 true KR100938044B1 (ko) 2010-01-21

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KR1020070114307A KR100938044B1 (ko) 2007-09-10 2007-11-09 불휘발성 메모리 장치 및 그 멀티 레벨 셀 프로그램 방법

Country Status (2)

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KR (1) KR100938044B1 (zh)
CN (2) CN102214484A (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101662277B1 (ko) 2010-05-12 2016-10-05 삼성전자주식회사 불휘발성 메모리 장치 및 그것의 프로그램 방법
US8358542B2 (en) * 2011-01-14 2013-01-22 Micron Technology, Inc. Methods, devices, and systems for adjusting sensing voltages in devices
CN105719693B (zh) * 2016-01-22 2019-09-17 清华大学 Nand存储器的多比特编程方法及装置
CN109509503B (zh) * 2017-09-14 2021-07-16 旺宏电子股份有限公司 编程非易失性存储器的方法及存储器系统

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060064856A (ko) * 2004-12-09 2006-06-14 삼성전자주식회사 불휘발성 메모리 장치의 프로그램 검증방법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3916862B2 (ja) * 2000-10-03 2007-05-23 株式会社東芝 不揮発性半導体メモリ装置
CN100364013C (zh) * 2002-09-07 2008-01-23 鸿富锦精密工业（深圳）有限公司 在闪存中存放校验码的方法及装置
JP4220319B2 (ja) * 2003-07-04 2009-02-04 株式会社東芝 不揮発性半導体記憶装置およびそのサブブロック消去方法
KR100666174B1 (ko) * 2005-04-27 2007-01-09 삼성전자주식회사 3-레벨 불휘발성 반도체 메모리 장치 및 이에 대한구동방법
KR100739967B1 (ko) * 2005-05-27 2007-07-16 주식회사 하이닉스반도체 플래시 메모리 장치의 프로그램 방법

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060064856A (ko) * 2004-12-09 2006-06-14 삼성전자주식회사 불휘발성 메모리 장치의 프로그램 검증방법

Also Published As

Publication number Publication date
CN101388249A (zh) 2009-03-18
CN101388249B (zh) 2011-09-21
CN102214484A (zh) 2011-10-12
KR20090026710A (ko) 2009-03-13

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