KR100928667B1 - Wafer defect analyzing device and control method for the same - Google Patents

Abstract

PURPOSE: A wafer defect analyzing device and a control method for the same are reduce a time of analyzing a wafer defect by making wafer defect analysis automation. CONSTITUTION: In a wafer defect analyzing device and a control method for the same, a magazine(10) receives a plurality of wafers. A transfer apparatus(50) extracts at least one wafer from a magazine and transfers it to the predetermined position. The ion extraction unit(21) receives an electrolyte, and ion extraction is performed by the electrolyte. A wafer defect decoradar(20) includes a decoration unit(22) equipped with a heater. A cleaning and drying apparatus(30) perform washing and drying of a wafer. A data storage module analyzes the defect on wafer surface and stores it.

Description

Wafer defect analysis system and its control method {WAFER DEFECT ANALYZING DEVICE AND CONTROL METHOD FOR THE SAME}

The present invention relates to a wafer defect analysis system and a control method thereof, and more particularly, to an automated system for analyzing a defect of a wafer through the decoration of a defect site of the wafer.

In general, as semiconductors are highly integrated and miniaturized, the thickness of the oxide film on the wafer surface becomes thinner, resulting in an increase in defects. Therefore, improving the quality of the wafer by improving the process through defect analysis on the wafer surface and improving the yield of the semiconductor It is directly related to product reliability.

Conventionally, in order to inspect defects on the wafer surface, defects on the wafer surface were magnified 100,000 times or 1 million times by using very expensive equipment such as SEM (Scanning Electron Microsope) or Transmission Electron Microscope (TEM).

However, the equipment such as SEM and TEM is very expensive, the analysis time is very long, and it requires a large number of advanced management personnel.

Thus, by applying an electric field to a wafer on which an oxide film has recently been grown, metal ions are adsorbed to the oxide defect site (hereinafter referred to as "decoration"), so that the state or location of the oxide film defect can be easily visually checked. A wafer defect analysis device has been developed that can check the number of defects using a counting device.

The present invention allows the virtually all processes to analyze the defects of the wafer to be made automatically so as to significantly reduce the time required for analyzing the wafer defects and to effectively improve the production process of the wafers, thereby improving productivity and reducing costs. A wafer defect analysis system and a control method thereof are provided.

Wafer defect analysis system according to the present invention, the magazine containing a plurality of wafers; A transfer device which extracts at least one wafer from the magazine and transfers the wafer to a predetermined position; A wafer defect decorator containing an electrolyte containing predetermined ions and applying an electric field to the wafer transferred and loaded by the transfer device to perform ion adsorption at a wafer defect site; And a cleaning and drying apparatus for cleaning and drying the wafer transferred and loaded from the wafer defect decorator by the transfer apparatus.

In addition, the cleaning and drying is characterized in that it further comprises an analysis device having a data storage unit for analyzing the defects of the wafer surface and the analyzed data is stored.

Preferably, the apparatus further includes an imaging device provided to image the wafer on which the cleaning and drying has been performed, and a screen display device for image outputting information captured by the imaging device.

Preferably, the method may further include an analysis device having a data storage unit for analyzing defects of the wafer from the information picked up by the imaging device and storing the analyzed data.

Preferably, the transfer apparatus is controlled to transfer a wafer from the magazine to the wafer defect decorator and from the wafer defect decorator to the cleaning dryer, wherein at least one of the magazine, the wafer defect decorator and the cleaning dryer is provided. It further comprises a control unit for controlling one operation.

In addition, preferably, the wafer defect decorator may be configured to decorate a wafer defect site by receiving an ion extracting unit for extracting a predetermined electrolyte and ion extraction into the electrolyte, and receiving an electrolyte solution from which the ion extraction is completed from the ion extracting unit. And a circulation unit for supplying the electrolyte having completed ion extraction from the ion extraction unit to the decoration unit, and discharging the electrolyte having completed decoration work from the decoration unit to supply the ion extraction unit to the ion extraction unit; Characterized in that it comprises a power supply unit for controlling the supply of power to the extraction unit, the decoration unit and the circulation unit.

On the other hand, the control method of the wafer defect analysis system according to the present invention, the step of extracting at least one of the plurality of wafers stored in the magazine is transferred to the wafer defect decorator; Decorating a wafer defect site in the wafer defect decorator; And washing and drying the wafer transferred from the wafer defect decorator to the cleaning dryer.

In addition, preferably, the method further comprises imaging the wafer on which the cleaning and drying is performed, and outputting the captured information through an image display apparatus.

The method may further include analyzing defects of the wafer from the photographed information, and storing the analyzed data in a data storage unit.

In addition, preferably, the wafer defect site decoration step includes a step of extracting predetermined ions into the electrolyte by operating the ion extraction unit, and supplying the electrolyte solution to the decoration unit where wafer defect site decoration occurs from the ion extraction unit. And circulating the electrolyte by discharging the electrolyte solution from the decoration unit after the wafer defect site decoration operation is completed and supplying the ion extracting unit.

The wafer defect analysis system and control method thereof according to the present invention allow substantially all processes to automatically analyze defects of wafers, thereby significantly reducing the time required for wafer defect analysis and effectively improving the wafer production process. In addition to improving productivity, cost savings can be achieved.

A detailed embodiment of a wafer defect analysis system and a control method thereof according to the present invention will be described with reference to the drawings.

First, a wafer defect analysis system according to an exemplary embodiment of the present invention will be described in detail with reference to FIG. 1.

As shown in FIG. 1, a wafer defect analysis system according to an exemplary embodiment of the present invention includes a magazine 10, a wafer defect decorator 20, a cleaning and drying apparatus 30, an imaging apparatus 40, and a transfer apparatus 50. In addition, it is preferable to include the screen display device 60 and the analysis device 70.

The magazine 10 is a device for accommodating a plurality of wafers (preferably, wafers formed or deposited with an oxide film on the surface thereof. Hereinafter, "wafer" means a wafer with an oxide film formed on the surface thereof).

At least one of the plurality of wafers stored in the magazine 10 is extracted and transferred by the transfer device 50.

The magazine 10 accommodates a plurality of wafers in a predetermined arrangement one by one, it is also possible to be provided to enable the vertical movement to match the position of each of the received wafers to the transfer device 50, the transfer device 50 The magazine 10 may be provided in a fixed state as long as it can be moved up and down and can move to a stored position of each wafer.

The wafer defect decorator 20 adsorbs predetermined ions to a defect site on the wafer surface with respect to a wafer extracted from the magazine 10 and transferred by the transfer device 50. This is the device to be made.

As illustrated in FIG. 1, the wafer defect decorator 20 may include an ion extraction unit 21, a decoration unit 22, a power supply unit 23, and the like.

The ion extraction unit 21 is an apparatus for making an electrolyte to be used for decoration by extracting ions to make an electrolyte for the decoration process on the wafer.

The decoration unit 22 is a device that receives a decoration electrolyte made by the ion extraction unit 21 and performs a decoration process on the loaded wafer when the wafer is loaded.

Although not shown in the drawings, the wafer defect decorator 20 includes a circulation unit so that the circulation unit causes the electrolyte to circulate with respect to the ion extraction unit 21 and the decoration unit 22. Workers can skip cumbersome tasks such as changing electrolytes one by one, improving productivity and reducing work time.

The power supply unit 23 is a device provided to selectively supply power to and control the ion extraction unit 21, the decoration unit 22, and a circulation unit (not shown), respectively.

More specific details regarding the wafer defect decorator 20 will be described later.

On the other hand, the cleaning and drying apparatus 30 is a device that is provided to clean and dry the wafer transferred after the decoration process in the wafer defect decorator 20.

The cleaning process of the cleaning and drying apparatus 30 may be a method of cleaning the wafer surface using the washing water, or may be cleaned by any other method.

And the drying process of the washing and drying apparatus 30 may proceed to dry by centrifugal dehydration method, may proceed to dry with a dry Clean Air, etc., it is possible to dry by any other method.

Meanwhile, the transfer device 50 extracts a wafer stored in the magazine 10, transfers the wafer to the wafer defect decorator 20, and cleans the wafer that has been decorated in the wafer defect decorator 20. It is a device provided to transfer to 30.

The transfer device 50 is preferably provided as a robot arm, and is provided to enable linear movement so as to move the wafer in a vertical direction and a left and right direction, and to be rotated about a central axis. desirable.

As shown in FIG. 1, the magazine 10, the wafer defect decorator 20, and the cleaning and drying apparatus 30 are disposed closer to the left and right sides and the front side of the transfer apparatus 50 based on the transfer apparatus 50. If 50) is rotated once, it is desirable to shorten the working time by allowing the wafer to be extracted, decorated, cleaned and dried.

As described above, when the magazine 10, the wafer defect decorator 20, the cleaning drying apparatus 30, and the like are disposed close to the transfer apparatus 50, the transfer apparatus 50 is implemented as a robot arm having multiple joints. As a result, the wafer can be transferred stably and accurately.

And although the robot arm constituting the transfer device 50 may be one, it may be composed of a plurality of robot arms.

That is, the first robot arm extracts the wafer from the magazine 10 and transfers the wafer to the wafer defect decorator 20. At this time, the second robot arm picks up the decorated wafer from the wafer defect decorator 20 to clean and dry the device 30. It is possible to configure to transfer to).

As such, when the transfer apparatus is implemented using a plurality of robot arms, the plurality of wafers may be substantially simultaneously processed through each process, thereby reducing the time for decorating the wafer and analyzing defects on the wafer.

Meanwhile, the magazine 10, the wafer defect decorator 20, the cleaning drying apparatus 30, and the like are preferably provided on the shelf 1 as shown in FIG. 1.

That is, the complex structure of each of the magazine 10, the wafer defect decorator 20, and the cleaning and drying apparatus 30 is located inside the shelf 1, and only the necessary parts of the respective devices are exposed on the shelf 1, It is possible to have a beautiful appearance.

For example, in the case of the wafer defect decorator 20, the ion extraction unit 21 and the circulation unit (not shown) are disposed inside the shelf 1, and the decoration unit 22 is disposed thereon, but the upper portion of the decoration unit 22 is disposed. By simplifying the exposure to the shelf (1) can be simplified in appearance.

As described above, the surface of the wafer, which has undergone both the decoration process and the cleaning and drying process, can be confirmed that the defect is decorated to a size that can be visually identified, and with this, in a predetermined counting device, The number of defects may be grasped, the location or state of the defects may be confirmed by an electron microscope, etc., and the defects may be analyzed based on such information, and the analyzed data may be stored.

In order to automate the analysis process on the decorated and cleaned and dried wafers as described above to be automated in a series of processes by connecting with the decoration, cleaning and drying processes as described above, as shown in FIG. 40, the screen display device 60, the analysis device 70, and the like is preferably further provided.

The imaging device 40 is an apparatus for imaging an entire surface or any portion of a wafer to generate image information or image information about the photographed wafer.

As shown in FIG. 1, the imaging device 40 is installed between the cleaning and drying device 30 and the magazine 10 so that the transfer device 50 may move the wafer without additional movement. By imaging by the imaging device 40, it is possible to shorten the time required and to improve work efficiency.

On the other hand, the image information or image information on the wafer surface picked up by the imaging device 40 is transmitted to the screen display device 60 so that the image or video of the wafer picked up by the screen display device 60 is output image It is desirable to be able to.

The operator may check the number of defects on the surface of the wafer through an image or an image of the wafer image output on the screen display device 60, and enlarge the size of the defect to check information on the position or state of the defect.

In this way, it is possible to include a separate analysis device 70 for analyzing the wafer defects through the image or image information on the wafer.

The analyzing apparatus 70 analyzes the number of defects, the location and state of the defects, and the like by using information about the wafer defects obtained through the image or image information on the wafer using a predetermined program or the like.

In addition, data about the result of analysis is generated and stored in a data storage unit (not shown) so that it can be used when analyzing the whole process later.

At this time, the unique number or lot number of the wafer is checked from the image or image information obtained when the wafer is picked up by the imaging device 40, and the data is sorted based on the unique number or lot number of the wafer. It is possible to store.

Meanwhile, with reference to FIG. 2, an example of a specific configuration of the wafer defect decorator of the wafer defect analysis system illustrated in FIG. 1 will be described. FIG. 2 is a schematic cross-sectional view of an example of the wafer defect decorator illustrated in FIG. 1.

As shown in FIG. 2, the wafer defect decorator of the wafer defect analysis system according to the present invention includes an ion extraction unit 21, a decoration unit 22, a circulation unit and a power supply unit (not shown in FIG. 1). It is done by

The ion extraction unit 21 is preferably provided with an ion extraction housing 201 for accommodating a predetermined electrolyte therein, and a cover 202 covering the top of the ion extraction housing 201.

In addition, the ion extracting unit 21 includes a first electrode 210 and a second electrode 233 provided at a position opposite to the first electrode 210. An electric field may be applied between the electrodes 233.

The first electrode 210 is preferably provided in the form of a plate (Plate) as shown in Figure 2, the second electrode 233 is fixed on one side to the cover 202 and the other side ion The source plate 230 to be supplied is preferably provided in the form of an electrode pole (Electrode Pole) is fixed.

The source plate 230 includes a material that is a raw material for extracting and supplying ions to the electrolyte in the ion extraction housing 201. For example, when the copper ions are extracted, the source plate 230 includes a copper material in all or part thereof.

As shown in FIG. 2, the source plate 230 may have a plurality of subplates 231 and 232 fixed to the second electrode 233.

Preferably, the upper end of the first electrode 210 is provided with an insulating member 220 made of a non-conductive material for electricity, and the insulating member 220 is an upper end of the first electrode 210 having an electrode plate shape. It is provided to cover all or part of the.

Meanwhile, the decoration unit 22 includes a decoration housing 101 accommodating an electrolyte solution containing predetermined ions therein for a decoration operation and a top cover 102 covering an upper end of the decoration housing 101. It is preferable to.

The decoration unit 22 may include a first electrode part 110 and a second electrode part 120 provided at a position opposite to the first electrode part 110. An electric field may be applied between the second electrode parts 120.

The first electrode 110 is preferably provided in the form of a plate (Plate), as shown in Figure 2, the second electrode 120 is connected to the electrode connecting member 121 and the top cover ( It is preferably provided to be fixed to 102.

In the embodiment shown in FIG. 2, the second electrode part 120 is provided to be fixed to the chucking device 130. However, the present invention is not limited thereto, but may be provided separately from each other.

The chucking device 130 is a device provided to chuck the wafer W to load the first electrode part 110, and as shown in FIG. 2, a vacuum chuck. It may be provided as or may be provided in any other form.

Therefore, when the chucking device 130 chucks the wafer W and loads the wafer W onto the first electrode part 110, the wafer W is positioned between the first electrode part 110 and the second electrode part 120. When an electric field is applied between the first electrode part 110 and the second electrode part 120, the ions contained in the electrolyte are adsorbed to the defect site on the surface of the wafer W, thereby decorating.

In this case, it is preferable that the ions contained in the electrolyte solution in the decoration housing 101 are uniformly distributed in the electrolyte solution. In order to uniformly distribute the ions, a predetermined heat is applied to the electrolyte solution so as to increase the activity of the ions so that the temperature is increased. The height is preferably to install the heater 140.

On the other hand, the circulation unit is to discharge the electrolyte of the decoration unit 22 is supplied to the ion extraction unit 21, the electrolyte is completed ion extraction from the ion extraction unit 21 to the decoration unit 22 It serves to circulate the electrolyte by being supplied.

The circulation unit includes a drain part and a supply part, and the drain part connects the outlet 103 of the decoration housing 101 and the supply port 203 of the cover 202 so that the electrolyte solution of the decoration device 100 is discharged. It includes a drain pipe 310 provided to flow to the ion extracting device 200, and a drain valve 311 is installed in the drain pipe 310 to control the flow of the electrolyte flowing through the drain pipe 310 It is desirable to.

In addition, as shown in Figure 2, it is preferable that the drain filter 312 is installed in the drain pipe 310, the drain filter 312 is foreign matter that can be mixed in the electrolyte inside the decoration housing 101 It is responsible for filtering.

One side of the drain pipe 310, as shown in Figure 2 is connected to the water supply pipe 320 and the water supply pipe 320 is preferably installed so that the water supply valve 321, the ion extraction apparatus 200 When the electrolyte is insufficient or when the electrolyte needs to be replaced according to the long time use of the electrolyte, new electrolyte may be supplied through the water supply pipe 320, and the supply of the electrolyte may be controlled by the water supply valve 321. Make sure

The supply unit comprises a discharge pipe 33 and the discharge valve 331 installed in the discharge pipe 330, the supply pipe 350 and the control valve 351 provided in the supply pipe 350, and the pumping device 340 to be made It is preferable to.

The discharge pipe 330 is connected to the discharge port 204 is provided so that the electrolyte in the ion extraction housing 201 is discharged through the discharge port 204 and flows. The discharge valve 331 controls the discharge of the electrolyte by opening and closing the discharge pipe 330.

One end of the supply pipe 350 is connected to the discharge pipe 330, and the other end thereof is connected to the inlet 104 so that the electrolyte flowing through the discharge pipe 330 is pumped by the pumping device 340 to allow the decoration housing. (102) to be fed into the interior. The control valve 351 opens and closes the supply pipe 350 to control the supply of the electrolyte.

One control valve 351 may be installed to control the flow of the electrolyte, and as shown in FIG. 1, one control valve is installed on one side and the other side of the supply pipe 350 to supply the supply pipe 350. It is more desirable to control the flow of the flowing electrolyte on both sides.

One side of the discharge pipe 330 or one side of the supply pipe 350 is provided with a pumping device 340 through the supply pipe 350 and the inlet 104 flows the electrolyte flowing into the discharge pipe 330 through the discharge port 204 It is desirable to be able to be supplied into the decoration housing 101.

In addition, as shown in Figure 2, one side of the discharge pipe 330 is equipped with a circulating filter 332 it is preferable to be able to filter the foreign matter mixed in the electrolyte discharged from the ion extraction housing 201.

Meanwhile, as shown in FIG. 2, the discharge pipe 330 is connected to the discharge pipe 330 and the discharge valve 371 is installed at the discharge pipe 370 to externally transfer the electrolyte solution from the ion extraction unit 21. It is possible to control the discharge valve 371 to discharge the electrolyte completely to the outside when it is to be discharged.

On the other hand, with reference to Figures 3 and 4 will be described in more detail with respect to the control method of the wafer defect analysis system according to the embodiment shown in FIG. 3 is a block diagram illustrating a control system of the wafer defect analysis system according to the embodiment shown in FIG. 1, and FIG. 4 is a flowchart of a method of controlling the wafer defect analysis system according to the control system shown in FIG. 3. .

As shown in FIG. 3, a wafer defect analysis system according to an exemplary embodiment of the present invention includes a magazine 10, a wafer defect decorator 20, a cleaning and drying apparatus 30, an imaging apparatus 40, and a transfer apparatus 50. ), The screen display device 60 and the analysis device 70 is provided to be controlled by the control unit (M).

Here, if the magazine 10 is not provided to be movable but is fixedly provided, the magazine 10 is not an object controlled by the controller M.

A control method of the wafer defect analysis system having such a control system will be described with reference to FIGS. 3 and 4.

In the standby state S10, the controller M determines whether wafer defect analysis is necessary (S20). That is, when a user issues an operation start command.

First, the control unit M controls the transfer device 50 to extract the wafer accommodated in the magazine 10 (S21). In order to allow the extraction of the wafer as described above, a means for stably chucking the wafer is provided at the end of the robot arm constituting the transfer device 50.

The control unit M controls the transfer device 50 so that the extracted wafer is transferred to the wafer defect decorator 20 (S23), and the transferred wafer is loaded into the decoration unit of the wafer defect decorator 20.

On the other hand, as soon as an operation start command is issued in the standby state, the ion extracting unit of the wafer defect decorator 20 is operated to extract ions from the electrolyte (S22).

When the ion extraction is completed, the electrolyte is supplied to the decoration unit to prepare for the decoration process (S24).

It is also possible to omit the step S22, that is, it is possible to complete the ion extraction before the start of operation, and then supply the electrolyte prepared in advance with the start of operation to the decoration unit so that the decoration can be performed immediately.

At this time, the transfer device 50 loads the wafer extracted from the magazine 10 into the decoration unit so that the defect site of the wafer surface is decorated (S25).

The controller M determines whether the decoration is completed (S30), and if the decoration is not completed yet, continues the decoration process, and if the decoration is completed, stops the operation of the decoration unit and proceeds to the next step.

That is, the controller M controls the transfer device 50 to take out the wafer from the wafer defect decorator 20, transfer the wafer to the cleaning drying apparatus 30 (S31), and load the wafer into the cleaning drying apparatus 30.

Preferably, before the wafer is loaded into the cleaning and drying apparatus 30, it is preferable to operate the cleaning and drying apparatus 30 in advance to prepare for cleaning and drying (S32).

On the other hand, when the decoration process is completed, it is preferable to drain the electrolyte of the decoration unit from the wafer defect decorator 20 and supply it to the ion extraction unit again (S33).

In addition, the wafers loaded into the cleaning and drying apparatus 30 are cleaned and dried (S34).

The controller M determines whether the washing and drying process is completed (S40), and if the washing and drying process is completed, the next step is performed.

That is, the control unit M controls the transfer device 50 to take out the wafer from the cleaning and drying device 30 and transfer the wafer to the imaging device 40 (S41).

The wafer transferred to the imaging device 40 is imaged on all or part of the wafer surface by the imaging device 40 (S42), and the captured image information or image information is transferred to the screen display device 60. An image or an image of the photographed wafer is outputted (S43).

The analyzer 70 counts the number of defects on the surface of the wafer through the image or image information of the photographed wafer, or analyzes the defect of the wafer from information on the position or state of the defect, and stores the analyzed data in the data storage unit. Save at 72.

At this time, since each wafer has a unique number, it is preferable to classify each unique number to store data.

As described above, the wafer defect analysis system according to the present invention allows the decoration process, cleaning and drying process, imaging process, and defect analysis process of the wafer to be performed automatically. This allows for faster and more accurate process improvements, which can lead to higher productivity, lower costs, and less time and effort.

1 is a perspective view schematically showing the configuration of a wafer defect analysis system according to an embodiment of the present invention.

FIG. 2 is a side cross-sectional view schematically illustrating a configuration of an example of a wafer defect decorator of the wafer defect analysis system according to the embodiment illustrated in FIG. 1.

3 is a block diagram illustrating a control system of the wafer defect analysis system according to the embodiment shown in FIG. 1.

4 is a flowchart illustrating a method of controlling a wafer defect analysis system according to the control system shown in FIG. 3.

Claims (10)

A magazine containing a plurality of wafers; A transfer device which extracts at least one wafer from the magazine and transfers the wafer to a predetermined position; An ion extracting unit for accommodating a predetermined electrolyte and extracting ions into the electrolyte, and receiving an electrolyte from the ion extracting unit and applying an electric field to the wafer transferred and loaded by the transfer device to the wafer defect site. A wafer defect decorator including a decorating unit which performs a decorating operation to perform ion adsorption, and includes a heater for applying heat to increase the activity of ions in the electrolyte; And A cleaning and drying apparatus for cleaning and drying the wafer transferred and loaded from the wafer defect decorator by the transfer apparatus; Wafer defect analysis system comprising a. The method of claim 1, Wafer defect analysis system characterized in that it further comprises an analysis device for analyzing the defects on the surface of the wafer is washed and dried and the analyzed data is stored. The method of claim 1, An imaging device provided to image the wafer on which the cleaning and drying is performed; And a screen display device for outputting an image output of the information picked up by the image pickup device. The method of claim 3, Wafer defect analysis system characterized in that it further comprises an analysis device for analyzing the defect of the wafer from the information picked up by the imaging device and having a data storage unit for storing the analyzed data. The method of claim 1, Controlling the transfer device such that a wafer is transferred from the magazine to the wafer defect decorator and from the wafer defect decorator to the cleaning dryer, and controlling the operation of at least one of the magazine, the wafer defect decorator and the cleaning dryer. Wafer defect analysis system further comprising a control unit. The method of claim 1, wherein the wafer defect decorator, A circulation unit for supplying the electrolyte extracting the ion extraction from the ion extraction unit to the decoration unit and discharging the electrolyte solution having completed the decoration work from the decoration unit to supply the ion extraction unit to the ion extraction unit; Wafer defect analysis system comprising a power supply unit for supplying power to the ion extraction unit, the decoration unit and the circulation unit. At least one of a plurality of wafers stored in the magazine is extracted and transferred to a wafer defect decorator; Heat is supplied to the electrolyte in the wafer defect decorator and decoration of the wafer defect site is performed by ions of the electrolyte solution; And Cleaning and drying a wafer transferred from the wafer defect decorator to a cleaning dryer; Method of controlling a wafer defect analysis system comprising a. The method of claim 7, wherein Imaging the wafer on which the cleaning and drying have been performed; And outputting the photographed information through a screen display device. The method of claim 8, Analyzing defects of the wafer from the captured information; And storing the analyzed data in a data storage unit. The method of claim 7, wherein the wafer defect site decoration step, Operating the ion extracting unit to extract predetermined ions into the electrolyte; Supplying electrolyte from the ion extraction unit to a decoration unit where wafer defect site decoration occurs; And circulating the electrolyte by discharging the electrolyte solution from the decoration unit after the wafer defect site decoration operation is completed and supplying the ion extracting unit to the ion extracting unit.

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