KR100912756B1 - 위치 제어 이중 마그네트론 - Google Patents

위치 제어 이중 마그네트론 Download PDF

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Publication number
KR100912756B1
KR100912756B1 KR1020070108288A KR20070108288A KR100912756B1 KR 100912756 B1 KR100912756 B1 KR 100912756B1 KR 1020070108288 A KR1020070108288 A KR 1020070108288A KR 20070108288 A KR20070108288 A KR 20070108288A KR 100912756 B1 KR100912756 B1 KR 100912756B1
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South Korea
Prior art keywords
magnetron
magnetic
magnetic pole
strength
target
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KR1020070108288A
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Korean (ko)
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KR20080038056A (ko
Inventor
크리스토퍼 엠. 파브로프
윈저 람
챠-징 궁
홍 에스. 양
일영 리챠드 홍
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어플라이드 머티어리얼스, 인코포레이티드
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3452—Magnet distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020070108288A 2006-10-27 2007-10-26 위치 제어 이중 마그네트론 Active KR100912756B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/553,880 US7767064B2 (en) 2006-10-27 2006-10-27 Position controlled dual magnetron
US11/553,880 2006-10-27

Publications (2)

Publication Number Publication Date
KR20080038056A KR20080038056A (ko) 2008-05-02
KR100912756B1 true KR100912756B1 (ko) 2009-08-18

Family

ID=39328815

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070108288A Active KR100912756B1 (ko) 2006-10-27 2007-10-26 위치 제어 이중 마그네트론

Country Status (5)

Country Link
US (1) US7767064B2 (enExample)
JP (1) JP5221929B2 (enExample)
KR (1) KR100912756B1 (enExample)
CN (1) CN101195906B (enExample)
TW (1) TWI367265B (enExample)

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US9771648B2 (en) 2004-08-13 2017-09-26 Zond, Inc. Method of ionized physical vapor deposition sputter coating high aspect-ratio structures
US8021527B2 (en) * 2005-09-14 2011-09-20 Applied Materials, Inc. Coaxial shafts for radial positioning of rotating magnetron
KR20120004502A (ko) * 2009-04-03 2012-01-12 어플라이드 머티어리얼스, 인코포레이티드 고압 ｒｆ-ｄｃ 스퍼터링과 이 프로세스의 단차 도포성 및 막 균일성을 개선하기 위한 방법
CN101994092B (zh) * 2009-08-28 2012-10-31 北京北方微电子基地设备工艺研究中心有限责任公司 磁控管装置
US8624496B2 (en) 2009-10-20 2014-01-07 Muons, Inc. Phase and frequency locked magnetron
US9249082B2 (en) 2010-02-09 2016-02-02 King Abdulaziz City for Science and Technology (KACST) Synthesis of dimethyl carbonate from carbon dioxide and methanol
US20120024229A1 (en) * 2010-08-02 2012-02-02 Applied Materials, Inc. Control of plasma profile using magnetic null arrangement by auxiliary magnets
CN102560387B (zh) * 2010-12-10 2014-05-28 北京北方微电子基地设备工艺研究中心有限责任公司 磁控源和磁控溅射设备、以及磁控溅射方法
US20120181166A1 (en) * 2011-01-14 2012-07-19 Applied Materials, Inc. Pvd process with synchronized process parameters and magnet position
US20130015055A1 (en) * 2011-07-11 2013-01-17 Hariharakeshava Sarpangala Hegde Dual plasma source systems and methods for reactive plasma deposition
CN102994966B (zh) * 2011-09-16 2015-02-25 北京北方微电子基地设备工艺研究中心有限责任公司 扫描机构、磁控源和磁控溅射设备
EP2938752A4 (en) * 2012-12-28 2016-05-25 Sputtering Components Inc PLASMA ACTIVATED CHEMICAL VAPOR DEPOSITION SOURCE (PECVD)
EP2778253B1 (de) 2013-02-26 2018-10-24 Oerlikon Surface Solutions AG, Pfäffikon Zylinderförmige Verdampfungsquelle
US9281167B2 (en) 2013-02-26 2016-03-08 Applied Materials, Inc. Variable radius dual magnetron
US9812303B2 (en) 2013-03-01 2017-11-07 Applied Materials, Inc. Configurable variable position closed track magnetron
JP6480445B2 (ja) 2013-08-14 2019-03-13 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ カプセル化されたマグネトロン
US9831075B2 (en) 2013-09-17 2017-11-28 Applied Materials, Inc. Source magnet for improved resputtering uniformity in direct current (DC) physical vapor deposition (PVD) processes
JP6471000B2 (ja) * 2015-02-24 2019-02-13 株式会社アルバック マグネトロンスパッタリング装置用の磁石ユニット及びこの磁石ユニットを用いたスパッタリング方法
CN107799375B (zh) * 2016-08-30 2019-10-11 北京北方华创微电子装备有限公司 一种磁控元件和磁控溅射装置
CN108950499B (zh) * 2017-05-18 2023-10-13 北京北方华创微电子装备有限公司 磁控管旋转结构、磁控管组件及反应腔室
US10513432B2 (en) * 2017-07-31 2019-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. Anti-stiction process for MEMS device
CN109841468B (zh) * 2017-11-28 2021-06-08 北京北方华创微电子装备有限公司 磁控管组件、磁控溅射腔室及半导体加工设备
TWI850717B (zh) * 2018-06-19 2024-08-01 美商應用材料股份有限公司 具有多陰極的沉積系統
US11462394B2 (en) * 2018-09-28 2022-10-04 Taiwan Semiconductor Manufacturing Co., Ltd. Physical vapor deposition apparatus and method thereof
US11846013B2 (en) * 2020-07-31 2023-12-19 Applied Materials, Inc. Methods and apparatus for extended chamber for through silicon via deposition
KR102240243B1 (ko) * 2020-11-19 2021-04-14 주식회사 바코솔루션 스퍼터링 건
KR102631073B1 (ko) * 2021-01-13 2024-01-30 에이피시스템 주식회사 스퍼터링 장치 및 스퍼터링 방법
JP7581953B2 (ja) * 2021-02-24 2024-11-13 東京エレクトロン株式会社 スパッタリング処理を行う装置、及び方法
CN116783324B (zh) * 2021-05-21 2025-11-28 株式会社爱发科 磁控溅射装置用阴极单元及磁控溅射装置
CN115679278B (zh) * 2021-07-29 2025-01-14 北京北方华创微电子装备有限公司 一种双磁控管溅射装置及半导体工艺设备
CN114774872B (zh) * 2022-04-29 2023-09-08 北京北方华创微电子装备有限公司 磁控管装置及磁控溅射设备
CN115305454B (zh) * 2022-08-26 2023-09-08 北京北方华创微电子装备有限公司 磁控管装置及磁控溅射设备

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000002614A (ko) * 1998-06-22 2000-01-15 김덕중 스퍼터링 장치
KR20010052285A (ko) * 1998-05-20 2001-06-25 조셉 제이. 스위니 스퍼터링 장치 및 마그네트론 유닛
US20050211548A1 (en) 2004-03-24 2005-09-29 Tza-Jing Gung Selectable dual position magnetron
US20060060470A1 (en) 2004-09-23 2006-03-23 Tza-Jing Gung Pressure switched dual magnetron

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03229867A (ja) * 1990-02-02 1991-10-11 Nec Corp マグネトロン型スパッタ装置
JPH04154966A (ja) * 1990-10-16 1992-05-27 Hitachi Ltd プラズマ処理方法および装置
DE4128340C2 (de) * 1991-08-27 1999-09-23 Leybold Ag Zerstäubungskathodenanordnung nach dem Magnetron-Prinzip für die Beschichtung einer kreisringförmigen Beschichtungsfläche
US6228236B1 (en) * 1999-10-22 2001-05-08 Applied Materials, Inc. Sputter magnetron having two rotation diameters
KR100439474B1 (ko) * 2001-09-12 2004-07-09 삼성전자주식회사 스퍼터링 장치

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010052285A (ko) * 1998-05-20 2001-06-25 조셉 제이. 스위니 스퍼터링 장치 및 마그네트론 유닛
KR20000002614A (ko) * 1998-06-22 2000-01-15 김덕중 스퍼터링 장치
US20050211548A1 (en) 2004-03-24 2005-09-29 Tza-Jing Gung Selectable dual position magnetron
US20060060470A1 (en) 2004-09-23 2006-03-23 Tza-Jing Gung Pressure switched dual magnetron

Also Published As

Publication number Publication date
JP5221929B2 (ja) 2013-06-26
US7767064B2 (en) 2010-08-03
JP2008163451A (ja) 2008-07-17
TWI367265B (en) 2012-07-01
TW200837204A (en) 2008-09-16
CN101195906A (zh) 2008-06-11
US20080099329A1 (en) 2008-05-01
KR20080038056A (ko) 2008-05-02
CN101195906B (zh) 2010-11-10

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