KR100903251B1 - 소결된 다결정질 갈륨 니트라이드 - Google Patents

소결된 다결정질 갈륨 니트라이드 Download PDF

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Publication number
KR100903251B1
KR100903251B1 KR1020047006467A KR20047006467A KR100903251B1 KR 100903251 B1 KR100903251 B1 KR 100903251B1 KR 1020047006467 A KR1020047006467 A KR 1020047006467A KR 20047006467 A KR20047006467 A KR 20047006467A KR 100903251 B1 KR100903251 B1 KR 100903251B1
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South Korea
Prior art keywords
gallium nitride
polycrystalline gallium
sintered polycrystalline
gan
vessel
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KR1020047006467A
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English (en)
Korean (ko)
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KR20040053234A (ko
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데벨린마크피
펜더데이비드씨
바가랄리수레쉬에스
박동-실
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제너럴 일렉트릭 캄파니
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
    • B01J3/062—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies characterised by the composition of the materials to be processed
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G15/00—Compounds of gallium, indium or thallium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/065—Composition of the material produced
    • B01J2203/0665—Gallium nitrides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/0675—Structural or physico-chemical features of the materials processed
    • B01J2203/0685—Crystal sintering

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Ceramic Products (AREA)
KR1020047006467A 2001-11-02 2002-10-30 소결된 다결정질 갈륨 니트라이드 KR100903251B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/001,575 2001-11-02
US10/001,575 US6861130B2 (en) 2001-11-02 2001-11-02 Sintered polycrystalline gallium nitride and its production
PCT/US2002/034792 WO2003041138A2 (en) 2001-11-02 2002-10-30 Sintered polycrystalline gallium nitride

Publications (2)

Publication Number Publication Date
KR20040053234A KR20040053234A (ko) 2004-06-23
KR100903251B1 true KR100903251B1 (ko) 2009-06-17

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KR1020047006467A KR100903251B1 (ko) 2001-11-02 2002-10-30 소결된 다결정질 갈륨 니트라이드

Country Status (9)

Country Link
US (1) US6861130B2 (xx)
EP (1) EP1444165A2 (xx)
JP (1) JP4349907B2 (xx)
KR (1) KR100903251B1 (xx)
CN (1) CN1280182C (xx)
AU (1) AU2002363469A1 (xx)
PL (1) PL368506A1 (xx)
WO (1) WO2003041138A2 (xx)
ZA (1) ZA200403783B (xx)

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US6270569B1 (en) 1997-06-11 2001-08-07 Hitachi Cable Ltd. Method of fabricating nitride crystal, mixture, liquid phase growth method, nitride crystal, nitride crystal powders, and vapor phase growth method

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US6113985A (en) 1999-04-27 2000-09-05 The United States Of America As Represented By Secretary Of The Air Force Process for the manufacture of group III nitride targets for use in sputtering and similar equipment

Also Published As

Publication number Publication date
US20030086856A1 (en) 2003-05-08
EP1444165A2 (en) 2004-08-11
US6861130B2 (en) 2005-03-01
KR20040053234A (ko) 2004-06-23
ZA200403783B (en) 2005-11-21
CN1280182C (zh) 2006-10-18
AU2002363469A1 (en) 2003-05-19
CN1582256A (zh) 2005-02-16
PL368506A1 (en) 2005-04-04
JP4349907B2 (ja) 2009-10-21
JP2005508822A (ja) 2005-04-07
WO2003041138A2 (en) 2003-05-15
WO2003041138A3 (en) 2004-02-19

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