KR100897187B1 - 감도저하를 방지하는 분리형 단위화소 및 상기 단위화소의구동방법 - Google Patents
감도저하를 방지하는 분리형 단위화소 및 상기 단위화소의구동방법 Download PDFInfo
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- KR100897187B1 KR100897187B1 KR1020070080160A KR20070080160A KR100897187B1 KR 100897187 B1 KR100897187 B1 KR 100897187B1 KR 1020070080160 A KR1020070080160 A KR 1020070080160A KR 20070080160 A KR20070080160 A KR 20070080160A KR 100897187 B1 KR100897187 B1 KR 100897187B1
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- 230000035945 sensitivity Effects 0.000 title claims abstract description 51
- 230000009467 reduction Effects 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 title claims abstract description 12
- 238000009792 diffusion process Methods 0.000 claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 239000004020 conductor Substances 0.000 claims abstract description 37
- 230000006866 deterioration Effects 0.000 claims abstract description 13
- 230000002265 prevention Effects 0.000 claims description 13
- 230000005540 biological transmission Effects 0.000 claims description 7
- 125000006850 spacer group Chemical group 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 2
- 239000012774 insulation material Substances 0.000 claims 1
- 230000003247 decreasing effect Effects 0.000 abstract description 2
- 230000015556 catabolic process Effects 0.000 description 8
- 238000006731 degradation reaction Methods 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 7
- 230000005684 electric field Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
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- 238000002474 experimental method Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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Abstract
Description
Claims (6)
- 빛이 하부에서 입사되며 에피텍셜 층이 상부에 형성된 기판;상기 기판의 표면 하부에 상하로 형성된 P형 확산영역 및 N형 확산영역의 접합으로 이루어진 포토다이오드;상기 기판의 표면 상부 설치되며 한 면이 상기 N형 확산영역 또는 상기 P형 확산영역과 인접하게 설치된 게이트전극용 도체;상기 게이트 전극용 도체의 다른 한 면에 인접하여 형성된 플로팅 확산영역; 및상기 포토다이오드 영역의 상부에 설치되어 상기 포토다이오드 영역을 덮는 감도저하방지용 도체를 구비하는 것을 특징으로 하는 감도저하를 방지하는 분리형 단위화소.
- 제1항에 있어서, 상기 감도저하방지용 도체는,상기 게이트전극용 도체의 일부분을 더 덮는 것을 특징으로 하는 감도저하를 방지하는 분리형 단위화소.
- 제1항에 있어서,상기 기판의 표면과 상기 게이트전극용 도체사이, 상기 기판의 표면과 상기 감도저하방지용 도체 사이에는 절연물질이 있는 것을 특징으로 하는 감도저하를 방 지하는 분리형 단위화소.
- 제1항에 있어서,상기 게이트전극용 도체는 다결정 실리콘이고,상기 감도저하방지용 도체는 금속 또는 다결정 실리콘인 것을 특징으로 하는 감도저하를 방지하는 분리형 단위화소.
- 제1항에 있어서,상기 기판은 P형이고,상기 게이트전극용 도체의 측면에는 스페이서가 설치되며,상기 P형 기판의 표면에는 상기 P형 확산영역이 형성되고,상기 P형 확산영역의 하부에는 상기 N형 확산영역이 상기 P형 확산영역보다 상기 스페이서의 두께 만큼 더 넓게 형성되는 것을 특징으로 하는 감도저하를 방지하는 분리형 단위화소.
- 빛이 하부에서 입사되며 에피텍셜 층이 상부에 형성된 기판;상기 기판의 표면 하부에 상하로 형성된 P형 확산영역 및 N형 확산영역의 접합으로 이루어진 포토다이오드;상기 기판의 표면 상부 설치되며 한 면이 상기 N형 확산영역 또는 상기 P형 확산영역과 인접하게 설치된 게이트전극용 도체;상기 게이트 전극용 도체의 다른 한 면에 인접하여 형성된 플로팅 확산영역; 및상기 포토다이오드 영역의 상부에 설치되어 상기 포토다이오드 영역을 덮는 감도저하방지용 도체를 구비하는 것을 특징으로 하는 감도저하를 방지하는 분리형 단위화소의 구동방법에 있어서,상기 게이트전극용 도체에는 전달제어신호가 인가되고, 상기 감도저하방지용 도체에는 감도저하 방지신호가 인가되며,상기 감도저하 방지신호는 상기 전달제어신호가 디스에이블 상태일 때 인에이블 되어 있고 상기 전달제어신호가 인에이블 되고 일정한 지연시간이 경과한 후 디스에이블 되며, 이 후 상기 전달제어신호가 디스에이블 되고 일정한 지연시간이 경과한 후 다시 인에이블 되는 것을 특징으로 하는 분리형 단위화소 구동방법.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070080160A KR100897187B1 (ko) | 2007-08-09 | 2007-08-09 | 감도저하를 방지하는 분리형 단위화소 및 상기 단위화소의구동방법 |
US12/670,603 US8274032B2 (en) | 2007-08-09 | 2008-08-04 | Separated unit pixel preventing sensitivity reduction and the driving method using the unit pixel |
PCT/KR2008/004506 WO2009020315A2 (en) | 2007-08-09 | 2008-08-04 | Separated unit pixel preventing sensitivity reduction and the driving method using the unit pixel |
CN2008801024684A CN101884105B (zh) | 2007-08-09 | 2008-08-04 | 防止灵敏度降低的分离的单位像素和使用该单位像素的驱动方法 |
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KR1020070080160A KR100897187B1 (ko) | 2007-08-09 | 2007-08-09 | 감도저하를 방지하는 분리형 단위화소 및 상기 단위화소의구동방법 |
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KR20090015648A KR20090015648A (ko) | 2009-02-12 |
KR100897187B1 true KR100897187B1 (ko) | 2009-05-14 |
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US (1) | US8274032B2 (ko) |
KR (1) | KR100897187B1 (ko) |
CN (1) | CN101884105B (ko) |
WO (1) | WO2009020315A2 (ko) |
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FR2961347B1 (fr) * | 2010-06-15 | 2012-08-24 | E2V Semiconductors | Capteur d'image a multiplication d'electrons |
CN104201180A (zh) * | 2014-07-11 | 2014-12-10 | 格科微电子(上海)有限公司 | 图像传感器及其形成方法 |
Citations (3)
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KR20030044333A (ko) * | 2001-11-29 | 2003-06-09 | 주식회사 하이닉스반도체 | 씨모스 이미지 센서 |
KR20060027971A (ko) * | 2004-09-24 | 2006-03-29 | 삼성전자주식회사 | 감도 제어가 가능한 광소자를 이용하는 고체 촬상 소자의픽셀 회로 및 그 구동 방법 |
US7253392B2 (en) * | 2003-09-08 | 2007-08-07 | Micron Technology, Inc. | Image sensor with photo diode gate |
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KR20040031862A (ko) * | 2002-10-04 | 2004-04-14 | (주)그래픽테크노재팬 | 생산성 및 감도가 향상된 이미지 센서 |
KR100782463B1 (ko) | 2005-04-13 | 2007-12-05 | (주)실리콘화일 | 3차원 구조를 갖는 이미지 센서의 분리형 단위화소 및 그제조방법 |
JP2007208817A (ja) * | 2006-02-03 | 2007-08-16 | Toshiba Corp | 固体撮像装置 |
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- 2008-08-04 WO PCT/KR2008/004506 patent/WO2009020315A2/en active Application Filing
- 2008-08-04 US US12/670,603 patent/US8274032B2/en active Active
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KR20030044333A (ko) * | 2001-11-29 | 2003-06-09 | 주식회사 하이닉스반도체 | 씨모스 이미지 센서 |
US7253392B2 (en) * | 2003-09-08 | 2007-08-07 | Micron Technology, Inc. | Image sensor with photo diode gate |
KR20060027971A (ko) * | 2004-09-24 | 2006-03-29 | 삼성전자주식회사 | 감도 제어가 가능한 광소자를 이용하는 고체 촬상 소자의픽셀 회로 및 그 구동 방법 |
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Publication number | Publication date |
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US8274032B2 (en) | 2012-09-25 |
CN101884105A (zh) | 2010-11-10 |
KR20090015648A (ko) | 2009-02-12 |
CN101884105B (zh) | 2012-11-14 |
WO2009020315A2 (en) | 2009-02-12 |
WO2009020315A3 (en) | 2009-04-23 |
US20100213348A1 (en) | 2010-08-26 |
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