KR100888438B1 - 백색 발광소자 및 그 제조방법 - Google Patents
백색 발광소자 및 그 제조방법 Download PDFInfo
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- KR100888438B1 KR100888438B1 KR1020070119898A KR20070119898A KR100888438B1 KR 100888438 B1 KR100888438 B1 KR 100888438B1 KR 1020070119898 A KR1020070119898 A KR 1020070119898A KR 20070119898 A KR20070119898 A KR 20070119898A KR 100888438 B1 KR100888438 B1 KR 100888438B1
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- reflective film
- light emitting
- emitting device
- white light
- led chip
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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- H01L2224/32257—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the layer connector connecting to a bonding area disposed in a recess of the surface of the item
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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Abstract
Description
Claims (31)
- 리플렉터 컵(reflector cup);상기 리플렉터 컵의 저면에 실장된 LED 칩;상기 LED 칩을 둘러싸는 투명수지;상기 투명수지 상부의 형광층; 및상기 투명수지와 형광층 사이에 개재되어, 상기 형광층으로부터 하부방향으로 향하는 형광((phosphorescence)을 상부방향으로 반사시키는 반사필름;을 포함하며,상기 반사필름의 플라즈마 파장(λP)은, 상기 LED 칩으로부터 발생된 광의 파장(λ1)보다 크고, 상기 형광층(λ2)으로부터 발생된 형광의 파장보다 작은 백색 발광소자.
- 제1항에 있어서,상기 투명수지는, 아크릴수지(PMMA : Polymethly Methacrylate), 폴리스티렌(polysterene), 폴리우레탄(polyuretane), 벤조구아나민 수지(benzoguanamine resin), 에폭시(epoxy) 및 실리콘 수지(silicone resin) 로 이루어진 군으로부터 선택된 것을 특징으로 하는 백색 발광소자.
- 제1항에 있어서,상기 형광층은, 투명수지와 형광물질이 혼합되어 형성된 것을 특징으로 하는 백색 발광소자.
- 제3항에 있어서,상기 형광층에 형성된 투명수지는, 아크릴수지(PMMA : Polymethly Methacrylate), 폴리스티렌(polysterene), 폴리우레탄(polyuretane), 벤조구아나민 수지(benzoguanamine resin), 에폭시(epoxy) 및 실리콘 수지(silicone resin) 로 이루어진 군으로부터 선택된 것을 특징으로 하는 백색 발광소자.
- 제1항에 있어서,상기 반사필름은, 나노필름인 것을 특징을 하는 백색 발광소자.
- 제1항에 있어서,상기 반사필름의 두께는 1 ~ 10 ㎚ 인 것을 특징으로 하는 백색 발광소자.
- 제1항에 있어서,상기 반사필름은, 상기 LED 칩으로부터 발생된 광은 투과시키고, 상기 형광 층으로부터 발생된 형광은 반사시키는 것을 특징으로 하는 백색 발광소자.
- 삭제
- 제1항에 있어서,상기 반사필름은, 금속물질로 이루어진 것을 특징으로 하는 백색 발광소자.
- 제9항에 있어서,상기 반사필름은, Cs(세슘)으로 이루어진 것을 특징으로 하는 백색 발광소자.
- 제1항에 있어서,상기 반사필름은, 반금속(quasi-metallic)물질로 이루어진 것을 특징으로 하는 백색 발광소자.
- 제11항에 있어서,상기 반사필름은, 도핑농도가 5 × 1021 cm-3 이상인 반도체로 이루어진 것을 특징으로 하는 백색 발광소자.
- 제1항에 있어서,상기 LED 칩은, 청색(blue), 적색(red), 녹색(green) 및 UV 파장을 발생시키는 발광소자 중 적어도 하나 이상을 포함하여 구성된 것을 특징으로 하는 백색 발광소자.
- 제1항에 있어서,상기 형광층은, 황색(yellow), 적색(red) 및 녹색(green) 중 어느 하나로 파장을 변환시키는 형광물질 중 적어도 하나 이상을 포함하여 구성된 것을 특징으로 하는 백색 발광소자.
- 상부를 향하여 경사진 리플렉터 컵(reflector cup);상기 리플렉터 컵의 저면에 실장된 LED 칩;상기 리플렉터 컵 내부에 상기 LED 칩을 둘러싸는 봉지재;상기 봉지재 상부의 형광층;상기 봉지재와 형광층 사이에 개재되어, 상기 LED 칩으로부터 입사되는 광은 투과시키고, 상기 형광층으로부터 입사되는 형광(phosphorescence)은 반사시키는 반사필름;을 포함하며,상기 반사필름의 플라즈마 파장(λP)은, 상기 LED 칩으로부터 발생된 광의 파장(λ1)보다 크고, 상기 형광층(λ2)으로부터 발생된 형광의 파장보다 작은 백색 발광소자.
- 제15항에 있어서,상기 반사필름의 두께는, 1 ~ 10 ㎚ 인 것을 특징으로 하는 백색 발광소자.
- 삭제
- 제15항에 있어서,상기 반사필름은, 금속물질로 이루어진 것을 특징으로 하는 백색 발광소자.
- 제18항에 있어서,상기 반사필름은, Cs(세슘)으로 이루어진 것을 특징으로 하는 백색 발광소자.
- 제15항에 있어서,상기 반사필름은, 반금속(quasi-metallic)물질로 이루어진 것을 특징으로 하는 백색 발광소자.
- 제20항에 있어서,상기 반사필름은, 도핑농도가 5 × 1021 cm-3 이상인 반도체로 이루어진 것을 특징으로 하는 백색 발광소자.
- 리플렉터 컵(reflector cup)을 준비하는 단계;상기 리플렉터 컵의 저면에 LED 칩을 실장하는 단계;상기 리플렉터 컵 내부에 상기 LED 칩을 둘러싸는 봉지재를 형성하는 단계;상기 봉지재 상부에 반사필름을 형성하는 단계; 및상기 반사필름 상에 형광층을 형성하는 단계;를 포함하며,상기 반사필름은, 플라즈마 파장(λP)이 상기 LED 칩으로부터 발생된 광의 파장(λ1)보다 크고, 상기 형광층(λ2)으로부터 발생된 형광의 파장보다 작은 것으로 형성하는 백색 발광소자의 제조방법.
- 제22항에 있어서,상기 봉지재는, 아크릴수지(PMMA : Polymethly Methacrylate), 폴리스티렌(polysterene), 폴리우레탄(polyuretane), 벤조구아나민 수지(benzoguanamine resin), 에폭시(epoxy) 및 실리콘 수지(silicone resin) 중 어느 하나를 선택하여 형성하는 것을 특징으로 하는 백색 발광소자의 제조방법.
- 제22항에 있어서,상기 반사필름 상에 형광층을 형성하는 단계는,투명수지에 형광물질을 혼합한 후, 이를 반사필름 상에 디스펜싱 하는 단계; 및상기 반사필름 상에 디스펜싱된 투명수지 및 형광물질을 경화시키는 단계로 이루어지는 것을 특징으로 하는 백색 발광소자의 제조방법.
- 제24항에 있어서,상기 투명수지는, 아크릴수지(PMMA : Polymethly Methacrylate), 폴리스티렌(polysterene), 폴리우레탄(polyuretane), 벤조구아나민 수지(benzoguanamine resin), 에폭시(epoxy) 및 실리콘 수지(silicone resin) 중 어느 하나를 선택하여 형성하는 것을 특징으로 하는 백색 발광소자의 제조방법.
- 제22항에 있어서,상기 반사필름의 두께는, 1 ~ 10 ㎚ 로 형성하는 것을 특징으로 하는 백색 발광소자의 제조방법.
- 삭제
- 제22항에 있어서,상기 반사필름은, 금속물질로 형성하는 것을 특징으로 하는 백색 발광소자의 제조방법
- 제28항에 있어서,상기 반사필름은, Cs(세슘)으로 형성하는 것을 특징으로 하는 백색 발광소자의 제조방법.
- 제22항에 있어서,상기 반사필름은, 반금속(quasi-metallic)물질로 형성하는 것을 특징으로 하는 백색 발광소자의 제조방법.
- 제30항에 있어서,상기 반사필름은, 도핑농도가 5 × 1021 cm-3 이상인 반도체로 형성하는 것을 특징으로 하는 백색 발광소자의 제조방법.
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US12/081,273 US7812362B2 (en) | 2007-11-22 | 2008-04-14 | White light emitting diode and method of manufacturing the same |
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KR101156096B1 (ko) | 2010-07-20 | 2012-06-20 | 엘지이노텍 주식회사 | 양자점 시트를 이용한 백라이트 유닛 및 그 제조방법 |
KR20180062842A (ko) | 2016-12-01 | 2018-06-11 | 연세대학교 산학협력단 | 발광다이오드 패키지 및 그 제조방법 |
WO2018230916A1 (ko) * | 2017-06-14 | 2018-12-20 | 엘지이노텍 주식회사 | 반도체소자 및 반도체소자 패키지 |
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KR101458077B1 (ko) * | 2008-05-01 | 2014-11-04 | 삼성전자 주식회사 | 발광 소자 및 그의 제조방법 |
JP2011171327A (ja) * | 2010-02-16 | 2011-09-01 | Toshiba Corp | 発光素子およびその製造方法、並びに発光装置 |
TW201135980A (en) * | 2010-04-02 | 2011-10-16 | Icp Technology Co Ltd | Light-emitting diode with substrate having surrounding wall and manufacturing method thereof |
US8461609B2 (en) * | 2010-05-26 | 2013-06-11 | Lg Innotek Co., Ltd. | Light emitting device package |
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Cited By (3)
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KR101156096B1 (ko) | 2010-07-20 | 2012-06-20 | 엘지이노텍 주식회사 | 양자점 시트를 이용한 백라이트 유닛 및 그 제조방법 |
KR20180062842A (ko) | 2016-12-01 | 2018-06-11 | 연세대학교 산학협력단 | 발광다이오드 패키지 및 그 제조방법 |
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