KR100861088B1 - SiC 에피택셜층 성장방법 - Google Patents
SiC 에피택셜층 성장방법 Download PDFInfo
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- KR100861088B1 KR100861088B1 KR1020070002699A KR20070002699A KR100861088B1 KR 100861088 B1 KR100861088 B1 KR 100861088B1 KR 1020070002699 A KR1020070002699 A KR 1020070002699A KR 20070002699 A KR20070002699 A KR 20070002699A KR 100861088 B1 KR100861088 B1 KR 100861088B1
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- epitaxial layer
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- sic powder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02529—Silicon carbide
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02634—Homoepitaxy
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- Condensed Matter Physics & Semiconductors (AREA)
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (10)
- 도가니 하부에 SiC 파우더를 넣고 그에 대향하여 기판을 위치하는 단계;대기압에서 도가니의 온도를 상승하여 상기 SiC 파우더를 소결하는 단계;압력을 낮추어 SiC 파우더를 승화시켜 상기 기판상에 제 1 에피택셜층을 증착시키는 단계; 및상기 제 1 에피택셜층 상에 제 2 에피택셜층을 증착시키는 단계를 포함하는 SiC 에피택셜 층 성장방법.
- 제 1 항에 있어서, 상기 SiC 파우더와 기판의 거리는 약 1~2mm인 SiC 에피택셜 층 성장방법.
- 제 1 항에 있어서, 상기 기판은 4H-SiC(0001) 웨이퍼인 SiC 에피택셜 층 성장방법.
- 삭제
- 제 1 항에 있어서, 상기 기판, 제 1 에피택셜층 및 제 2 에피택셜층 각각은 n형 또는 p형 도전형인 SiC 에피택셜 층 성장방법.
- 제 1 항에 있어서, 상기 기판 및 상기 제 2 에피택셜층은 동일 도전형이고, 상기 제 1 에피택셜층은 상기 기판 및 제 2 에피택셜층과 다른 도전형인 SiC 에피택셜층 성장방법.
- 제 5 항에 있어서, 상기 제 1 또는 상기 제 2 에피택셜층의 p형 소스는 Al이 첨가된 SiC 파우더인 SiC 에피택셜층 성장방법.
- 제 7 항에 있어서, 상기 SiC 파우더는 아르곤 가스 분위기 및 1500도 내지 2000도의 온도에서 10분 내지 50분 동안 소결한 SiC 에피택셜층 성장방법.
- 제 5 항에 있어서, 상기 제 1 또는 상기 제 2 에피택셜 층의 n형 소스는 6H-SiC 파우더인 SiC 에피택셜 층 성장방법.
- 제 1 항에 있어서, 상기 에피택셜 층 성장은 1 내지 10Torr 압력에서 1500도 내지 2000도에서 성장율 10 내지 50㎛/h으로 행하는 SiC 에피택셜층 성장방법.
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KR1020070002699A KR100861088B1 (ko) | 2007-01-10 | 2007-01-10 | SiC 에피택셜층 성장방법 |
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KR1020070002699A KR100861088B1 (ko) | 2007-01-10 | 2007-01-10 | SiC 에피택셜층 성장방법 |
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KR20080065715A KR20080065715A (ko) | 2008-07-15 |
KR100861088B1 true KR100861088B1 (ko) | 2008-09-30 |
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Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20040077082A (ko) * | 2003-02-27 | 2004-09-04 | 학교법인 동의학원 | SiC 단결정 성장장치 |
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- 2007-01-10 KR KR1020070002699A patent/KR100861088B1/ko active IP Right Grant
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20040077082A (ko) * | 2003-02-27 | 2004-09-04 | 학교법인 동의학원 | SiC 단결정 성장장치 |
Non-Patent Citations (1)
Title |
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박치권 외 3인, "4H-SiC(0001) Epilayer 성장 및 쇼트키 다이오드의 전기적 특성", 한국전기전자재료학회논문지, 2006년 제19권4호, 페이지344~349, 2006년4월* |
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