KR100852295B1 - Inorganic Particle-containing Composition, Transfer Film and Plasma Display Panel Production Process - Google Patents

Abstract

The present invention can efficiently form components (for example, partitions, electrodes, resistors, dielectric layers, phosphors, color filters, and black matrices) of PDPs having excellent surface smoothness, and efficiently form PDPs having high positional accuracy of components. The present invention relates to an inorganic particle-containing composition, a transfer film, and a method for producing a PDP using the same, which can be formed to efficiently produce a PDP having a dielectric layer having a large film thickness and excellent film uniformity and surface smoothness. .

Moreover, this invention contains the plasticizer of the specific structure represented by [A] inorganic particle, [B] binder resin, and [C] glycerin-1, 2-diacetyl-3- monolaurate. It relates to a particle-containing composition.

Inorganic particle-containing composition, transfer film, PDP, surface smoothness, positional accuracy, dielectric layer, partition, electrode, resistor, color filter, black matrix, inorganic particles, binder resin, plasticizer, glycerin-1,2-diacetyl-3-mono Laurate

Description

Inorganic Particle-containing Composition, Transfer Film and Plasma Display Panel Production Process

BRIEF DESCRIPTION OF THE DRAWINGS It is a schematic diagram which shows the cross-sectional shape of an AC plasma display panel.

Fig. 2A is a schematic cross-sectional view showing the transfer film of the present invention, and Fig. 2B is a cross-sectional view showing the layer structure of the transfer film.

3 is a schematic cross-sectional view showing an example of a partition formation step (transfer step, formation step of a resist film, exposure step) in the manufacturing method of the present invention.

4 is a schematic cross-sectional view showing an example of a partition formation step (development step, etching step, firing step) in the manufacturing method of the present invention.

<Brief description of symbols for the main parts of the drawings>

1, 2, 11 glass substrate

3, 40 bulkhead

4 transparent electrodes

5 bus electrode

6 address electrode

7 fluorescent material                 

8, 9, 13 dielectric layers

10 protective layer

F1, 22 support film

F2, 21 film-forming material layer

F3 cover film

12 electrodes

20 transfer film

25 bulkhead pattern layer

25A material layer residue

25B material layer removal

31 resist film

35 resist pattern

35A resist residue

35B resist removal

50 panel material

M Exposure Mask

MA light transmission

MB shading

TECHNICAL FIELD This invention relates to the manufacturing method of an inorganic particle containing composition, a transfer film, and a plasma display panel.

In recent years, a plasma display attracts attention as a flat fluorescent display. 1 is a schematic diagram showing a cross-sectional shape of an AC plasma display panel (hereinafter referred to as "PDP"). In FIG. 1, 1 and 2 are glass substrates arrange | positioned opposingly, 3 is a partition, and the cell is partitioned by the glass substrate 1, the glass substrate 2, and the partition 3. 4 is a transparent electrode fixed to the glass substrate 1, 5 is a bus electrode formed on the transparent electrode 4 for the purpose of lowering the resistance of the transparent electrode 4, 6 is fixed to the glass substrate 2 Address electrode, 7 is a fluorescent material retained in the cell, 8 is a dielectric layer formed on the surface of the glass substrate 1 to cover the transparent electrode 4 and the bus electrode 5, 9 is glass to cover the address electrode 6 The dielectric layer 10 formed on the surface of the substrate 2 is a protective film made of, for example, magnesium oxide.

Further, in a color PDP, a color filter (red, green, blue), a black matrix, or the like can be provided between the glass substrate and the dielectric layer in order to obtain a high contrast image.

As a method for producing dielectrics, barrier ribs, electrodes, phosphors, color filters, and black stripes (matrix) of these PDPs, (1) screen printing is performed by screen-printing a non-photosensitive inorganic particle-containing paste on a substrate to obtain a pattern and firing it. The photolithographic method which forms a pattern on a board | substrate by forming the method, (2) photosensitive inorganic particle containing resin layer on a board | substrate, and develops after irradiating an ultraviolet-ray to this film | membrane through a photomask, etc. are known. .

However, the screen printing method has a problem that the demand for pattern precision due to the enlargement and high precision of the panel is very severe, and that it is not possible to cope with normal printing.

In contrast, the photolithography method is excellent in principle in pattern accuracy, and particularly in the method of using a transfer film, it is possible to form a pattern excellent in uniformity of film thickness and uniformity of surface. However, the film formation material layer formed by apply | coating the inorganic particle containing composition containing acrylic resin on a support film did not have sufficient flexibility. Moreover, there existed a problem that the roughness of the surface called citron skin is confirmed by the obtained panel material.

This invention is made | formed in view of the above circumstances.

A first object of the present invention is to provide an inorganic particle-containing composition capable of suitably forming components (eg, partition walls, electrodes, resistors, dielectric layers, phosphors, color filters, black matrices) of PDP having excellent surface smoothness. It is in doing it.

The 2nd object of this invention is to provide the inorganic particle containing composition which can form the glass sintered compact (for example, the dielectric layer which comprises PDP) which has a high light transmittance.

A third object of the present invention is to provide an inorganic particle-containing composition capable of producing a transfer film excellent in flexibility of the film forming material layer.                         

It is a fourth object of the present invention to provide an inorganic particle-containing composition capable of producing a transfer film excellent in transferability (heat adhesion to a substrate) of a film forming material layer.

A fifth object of the present invention is to provide a transfer film capable of efficiently forming a component of a PDP having excellent surface smoothness.

A sixth object of the present invention is to provide a transfer film excellent in flexibility of the film forming material layer.

A seventh object of the present invention is to provide a transfer film excellent in transferability (heat adhesion to a substrate) of a film forming material layer.

An eighth object of the present invention is to provide a method for producing a PDP that can efficiently form components of the PDP having excellent surface smoothness.

A ninth object of the present invention is to provide a PDP manufacturing method capable of efficiently forming a PDP with high positional accuracy of components.

A tenth object of the present invention is to provide a PDP manufacturing method capable of forming a dielectric layer having a large film thickness efficiently.

An eleventh object of the present invention is to provide a PDP manufacturing method capable of efficiently forming a dielectric layer required for a large panel.

A twelfth object of the present invention is to provide a method for producing a PDP having a dielectric layer having excellent uniformity in film thickness.

A thirteenth object of the present invention is to provide a method for producing a PDP having a dielectric layer having excellent surface smoothness.

The inorganic particle containing composition of this invention contains [A] inorganic particle, [B] binder resin, and [C] the compound represented by following formula (1), It is characterized by the above-mentioned.

In the formula, one of R ¹ , R ² and R ³ represents a group represented by -CO-A (where A represents an alkyl group having 5 to 20 carbon atoms), and the other two are each independently a hydrogen atom or an acetyl group. Or propanoyl group.

The transfer film of this invention has a film formation material layer obtained from the said inorganic particle containing composition, It is characterized by the above-mentioned.

The method for producing a PDP of the present invention includes a step of transferring a film forming material layer obtained from the inorganic particle-containing composition onto a substrate and baking the transferred film forming material layer to form a dielectric layer on the substrate. It is done.

In addition, in the method for producing a PDP of the present invention, a film forming material layer obtained from the inorganic particle-containing composition is transferred onto a substrate, a resist film is formed on the transferred film forming material layer, and the resist film is subjected to exposure treatment to obtain a resist pattern. The latent image is formed, the resist film is developed to render the resist pattern present, the film forming material layer is etched to form a pattern layer corresponding to the resist pattern, and the pattern layer is subjected to baking to form a partition wall and an electrode. And forming a component selected from resistors, dielectric layers, phosphors, color filters, and black matrices.

Moreover, the manufacturing method of the PDP of this invention forms the laminated film of a resist film and the film formation material layer obtained from the said inorganic particle containing composition on a support film, transfers the laminated film formed on the support film on a board | substrate, and laminates this. Exposing the resist film constituting the film to form a latent image of the resist pattern; developing the resist film to present the resist pattern; etching the film forming material layer to form a pattern layer corresponding to the resist pattern; And calcining the pattern layer to form a component selected from a partition, an electrode, a resistor, a dielectric layer, a phosphor, a color filter, and a black matrix.

Hereinafter, the inorganic particle containing composition (henceforth simply a "composition") of this invention is demonstrated in detail.

The composition of this invention contains an inorganic particle, a binder resin, and the plasticizer represented by a specific chemical formula as essential components.

<Inorganic particles>

It does not specifically limit as an inorganic substance which comprises the inorganic particle which comprises the composition of this invention, It can select suitably according to the use (type of component of PDP) of the sintered compact formed with this composition.

Here, the glass powder which has a softening point in the range of 400-600 degreeC as an inorganic particle contained in the composition for forming the "dielectric layer" or the "partition wall" which comprises a PDP is mentioned. If the softening point of the glass powder is less than 400 ° C, the organic powder is formed in the dielectric layer formed because the glass powder melts in a step in which the organic material such as the binder resin is not completely decomposed and removed in the baking step of the film-forming material layer by the composition. Some of the material remains, and as a result, the dielectric layer is colored, and its light transmittance tends to be lowered. On the other hand, when the softening point of glass powder exceeds 600 degreeC, since it needs to bake at higher temperature than 600 degreeC, distortion etc. are easy to generate | occur | produce in a glass substrate.

Specific examples of suitable glass powders include (1) lead oxide, boron oxide, a mixture of silicon oxide (PbO-B ₂ O ₃ -SiO ₂ based), (2) zinc oxide, boron oxide, silicon oxide (ZnO-B ₂ O ₃ -SiO ₂ based), (3) lead oxide, boron oxide, silicon oxide, mixture of aluminum oxide (PbO-B ₂ O ₃ -SiO ₂ -Al ₂ O ₃ based), (4) lead oxide, zinc oxide , A mixture of boron oxide, silicon oxide (PbO-ZnO-B ₂ O ₃ -SiO ₂ system), and the like.

These glass powders can be contained (combined) in a composition for forming components other than the dielectric layer and the partition wall (for example, an electrode, a resistor, a phosphor, a color filter, and a black matrix). Content of the glass frit in the inorganic powder containing resin composition for obtaining such a panel material is 90 weight% or less normally with respect to inorganic powder whole quantity, Preferably it is 50 to 90 weight%.

Examples of the inorganic particles contained in the composition for forming the “electrode” constituting the PDP include metal particles made of Ag, Au, Al, Ni, Ag-Pd alloys, Cu, Cr, and the like.

These metal particles may be contained in the form used together with glass powder in the composition for forming a dielectric layer. The content of the metal particles in the dielectric layer-forming composition is usually 10% by weight or less, preferably 0.1 to 5% by weight based on the total amount of the inorganic powder.

The inorganic particles contained in the composition for forming a "resistor" to configure the PDP may be mentioned particles composed of RuO ₂ and the like.

Examples of the inorganic particles contained in the composition for forming the "phosphor" constituting the PDP include Y ₂ O ₃ : Eu ³⁺ , Y ₂ SiO ₅ : Eu ³⁺ , Y ₃ Al ₅ O ₁₂ : Eu ³⁺ , and YVO ₄ : Red fluorescent substances such as Eu ³⁺ , (Y, Gd) BO ₃ : Eu ³⁺ , Zn ₃ (PO ₄ ) ₂ : Mn; Green phosphors such as Zn ₂ SiO ₄ : Mn, BaAl ₁₂ O ₁₉ : Mn, BaMgAl ₁₄ O ₂₃ : Mn, LaPO ₄ : (Ce, Tb), Y ₃ (Al, Ga) ₅ O ₁₂ : Tb; Y ₂ SiO ₅ : Ce, BaMgAl ₁₀ O _17: Eu ²⁺ , BaMgAl ₁₄ O ₂₃ : Eu ²⁺ , (Ca, Sr, Ba) ₁₀ (PO ₄ ) ₆ Cl ₂ : Eu ²⁺ , (Zn, Cd) And particles made of a blue fluorescent substance such as S: Ag.

The inorganic particles contained in the composition for forming the "color filter" constituting the PDP include red substances such as Fe ₂ O ₃ and Pb ₃ O ₄ , green substances such as Cr ₂ O ₃ , and 2 (Al ₂ Na _And particles made of a blue substance such as ₂ Si ₃ O ₁₀ ) and Na ₂ S ₄ .

As an inorganic particle contained in the composition for forming the "black matrix" which comprises a PDP, the particle | grains which consist of Mn, Fe, Cr, etc. are mentioned.

<Binder Resin>

It is preferable that the binder resin which comprises the composition of this invention is an acrylic resin.

Since the acrylic resin is contained as the binder resin, the film forming material layer formed exhibits excellent (heating) adhesion to the substrate. Therefore, in the case of applying the composition of the present invention on a support film to produce a transfer film, the resulting transfer film is excellent in transferability (heat adhesion to a substrate) of the film forming material layer.

The acrylic resin constituting the composition of the present invention is selected from (co) polymers which have appropriate tackiness to bind inorganic particles and which are completely oxidized and removed by firing treatment (400 ° C. to 600 ° C.) of the film forming material.

As such an acrylic resin, the homopolymer of the (meth) acrylate compound represented by following formula (2), the 2 or more types of copolymer of the (meth) acrylate compound represented by following formula (2), and the (meth) acryl represented by following formula (2) Copolymers of late compounds with copolymerizable monomers are included.                     

In the formula, R ⁴ represents a hydrogen atom or a methyl group, and R ⁵ represents a monovalent organic group.

Specific examples of the (meth) acrylate compound represented by Formula 2 include methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, isopropyl (meth) acrylate, and butyl (meth) acrylate. , Isobutyl (meth) acrylate, t-butyl (meth) acrylate, pentyl (meth) acrylate, amyl (meth) acrylate, isoamyl (meth) acrylate, hexyl (meth) acrylate, heptyl (meth ) Acrylate, octyl (meth) acrylate, isooctyl (meth) acrylate, ethylhexyl (meth) acrylate, nonyl (meth) acrylate, decyl (meth) acrylate, isodecyl (meth) acrylate, undecylenate Alkyl (meth) acrylates such as sil (meth) acrylate, dodecyl (meth) acrylate, lauryl (meth) acrylate, stearyl (meth) acrylate, and isostearyl (meth) acrylate;

Hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 3-hydroxypropyl (meth) acrylate, 2-hydroxybutyl (meth) acrylate, 3-hydroxybutyl (meth) Hydroxyalkyl (meth) acrylates such as acrylate and 4-hydroxybutyl (meth) acrylate;                     

Phenoxyalkyl (meth) acrylates such as phenoxyethyl (meth) acrylate and 2-hydroxy-3-phenoxypropyl (meth) acrylate;

2-methoxyethyl (meth) acrylate, 2-ethoxyethyl (meth) acrylate, 2-propoxyethyl (meth) acrylate, 2-butoxyethyl (meth) acrylate, 2-methoxybutyl ( Alkoxyalkyl (meth) acrylates such as meth) acrylate;

Polyethylene glycol mono (meth) acrylate, ethoxy diethylene glycol (meth) acrylate, methoxy polyethylene glycol (meth) acrylate, phenoxy polyethylene glycol (meth) acrylate, nonylphenoxy polyethylene glycol (meth) acrylate, Polyalkylene glycols such as polypropylene glycol mono (meth) acrylate, methoxy polypropylene glycol (meth) acrylate, ethoxy polypropylene glycol (meth) acrylate, and nonylphenoxy polypropylene glycol (meth) acrylate ( Meth) acrylates;

Cyclohexyl (meth) acrylate, 4-butylcyclohexyl (meth) acrylate, dicyclopentanyl (meth) acrylate, dicyclopentenyl (meth) acrylate, dicyclopentadienyl (meth) acrylate, bor Cycloalkyl (meth) acrylates such as niel (meth) acrylate, isobornyl (meth) acrylate and tricyclodecanyl (meth) acrylate;

Benzyl (meth) acrylate, tetrahydrofurfuryl (meth) acrylate, etc. are mentioned.

Of these, R ⁵ in the general formula (2) is preferably a group containing an alkyl group or an oxyalkylene group, and particularly preferred (meth) acrylate compound is butyl (meth) acrylate, ethylhexyl (meth) acrylate, lauryl ( Meth) acrylate, isodecyl (meth) acrylate, and 2-ethoxyethyl (meth) acrylate.

There is no restriction | limiting in particular if it is a compound copolymerizable with the said (meth) acrylate compound as another copolymerizable monomer, For example, Unsaturated carboxylic acids, such as (meth) acrylic acid, vinylbenzoic acid, maleic acid, vinylphthalic acid; And vinyl group-containing radically polymerizable compounds such as vinyl benzyl methyl ether, vinyl glycidyl ether, styrene, α-methyl styrene, butadiene and isoprene.

In the acrylic resin which comprises the composition of this invention, the copolymerization component derived from the (meth) acrylate compound represented by the said General formula (2) is 70 weight% or more normally, Preferably it is 90 weight% or more.

Here, as a specific example of a preferable acrylic resin, polymethyl methacrylate, polybutyl methacrylate, a methyl methacrylate- butyl methacrylate copolymer, etc. can be illustrated.

Moreover, in formation of the component of PDP using the photoresist method mentioned later, when alkali solubility is needed for the etching process of a film formation material layer, unsaturated carboxylic acid is contained as said other copolymerizable monomer (copolymerization component). It is preferable.

As the molecular weight of the acrylic resin which comprises the composition of this invention, it is preferable that it is 4,000-300,000 as a weight average molecular weight (henceforth simply a "weight average molecular weight") of polystyrene conversion by GPC, More preferably, it is 10,000-200,000. .

As content rate of the binder resin in the composition of this invention, it is preferable that it is 5-80 weight part with respect to 100 weight part of inorganic particles, More preferably, it is 10-50 weight part. When the ratio of the binder resin is too small, the inorganic particles cannot be reliably bound and maintained. On the other hand, when the ratio is excessive, the sintered body (for example, the dielectric layer) that requires a long time or is formed in the firing process has a sufficient strength or film. It may not have a thickness.

<Plasticizer>

The compound represented by the said Formula (1) is used as a plasticizer (henceforth a "specific plasticizer."). According to the composition of the present invention in which a specific plasticizer is contained, it is possible to prevent the occurrence of citron skin in the film forming material layer to be formed and to express excellent surface smoothness. In addition, even if the transfer film obtained is bent, a small crack (cracking) occurs on the surface of the film-forming material layer, and the transfer film is excellent in flexibility and can be easily wound into a roll.

In addition, since the specific plasticizer is easily decomposed and removed by heat, the light transmittance of the dielectric layer obtained by firing the film forming material layer is not reduced.

In Chemical Formula 1, which represents a specific plasticizer, one of R ¹ , R ² and R ³ represents a group represented by -CO-A (wherein A represents an alkyl group having 5 to 20 carbon atoms), and the other two are each Independently, a hydrogen atom, an acetyl group, or a propanoyl group is represented.

Carbon number of the alkyl group represented by A is 5-20, Preferably it is 10-18. When carbon number of this alkyl group is less than 5, the function as a plasticizer may be inadequate. Moreover, when it exceeds 20, the solubility of the plasticizer with respect to the solvent which comprises an inorganic particle containing composition may fall, and favorable flexibility may not be obtained.

As a specific alkyl group, n-pentyl group, n-hexyl group, n-heptyl group, n-octyl group, n-nonyl group, n-decyl group, n-undecyl group, n-dodecyl group (lauryl group), n- Pentadecyl group, n-hexadecyl group, n-heptadecyl group, n-octadecyl group (stearyl group), n-nonadecyl group, n-eicosyl group, etc. are mentioned. Among these, n-dodecyl group is especially preferable.

Although any one of R <^1> , R <^2> and R <^3> represents the group represented by -CO-A, it is especially preferable that R <^1> or R <^3> represents the group represented by -CO-A. In addition, the other two each independently represent a hydrogen atom, an acetyl group or an n-propanoyl group, but among these, a hydrogen atom and an acetyl group are preferable, and it is especially preferable to include one or more acetyl groups.

Specific examples of the compound represented by Formula 1 include glycerin-1-acetyl-3-laurate, glycerin-2-acetyl-1-laurate, glycerin-1,2-diacetyl-3-laurate, and glycerin-1- Acetyl-3-monooleate, glycerin-2-acetyl-1-monooleate, glycerin-1,2-diacetyl-3-monooleate, glycerin-1-acetyl-3-stearate, glycerin-2- Acetyl-1-stearate, glycerin-1,2-diacetyl-3-stearate, and the like. Among these, glycerin-1,2-diacetyl-3-laurate, glycerin-1,2-dimethylacetyl-3-stearate, and the like are particularly preferable.

In the composition of this invention, it is preferable that the content rate of a specific plasticizer is 0.1-20 weight part with respect to 100 weight part of inorganic particles, More preferably, it is 0.5-10 weight part. When the ratio of a specific plasticizer is too small, the surface smoothness and plasticity of the film formation material layer formed using the composition obtained cannot fully be improved. On the other hand, when this ratio is excessive, the adhesiveness (tag) of the film formation material layer formed using the composition obtained may become excessive, and the handleability of the transfer film provided with such a film formation material layer may be inferior.

<Solvent>

The composition of the present invention usually contains a solvent. As said solvent, it is preferable that affinity with an inorganic particle and the solubility of binder resin are favorable, it is possible to provide suitable viscosity to the composition obtained, and to be able to evaporate easily by drying.

Specific examples of such a solvent include ketones such as diethyl ketone, methyl butyl ketone, dipropyl ketone, and cyclohexanone; alcohols such as n-pentanol, 4-methyl-2-pentanol, cyclohexanol and diacetone alcohol; Ether alcohols such as ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, propylene glycol monomethyl ether and propylene glycol monoethyl ether; Saturated aliphatic monocarboxylic acid alkyl esters such as acetic acid-n-butyl and amyl acetate; Lactic acid esters such as ethyl lactate and n-butyl lactate; Ether esters such as methyl cellosolve acetate, ethyl cellosolve acetate, propylene glycol monomethyl ether acetate, and ethyl-3-ethoxypropionate, and the like can be exemplified, and these can be used alone or in combination of two or more thereof. Can be used.

It is preferable that it is 40 weight part or less with respect to 100 weight part of inorganic particles from a viewpoint of maintaining the viscosity of a composition in an appropriate range, and, as for the content rate of the solvent in the composition of this invention, More preferably, it is 5-30 weight part.

The composition of the present invention may contain, in addition to the above essential components, various additives such as dispersants, tackifiers, surface tension modifiers, stabilizers, antifoaming agents, and the like as optional components. In particular, a silyl group-containing compound may be contained for the purpose of improving the dispersion stability of the inorganic particles. As this silyl group containing compound, the silyl group containing compound (saturated alkyl group containing (alkyl) alkoxysilane) represented by following formula (3) is preferable.

In formula, p is an integer of 3-20, m is an integer of 1-3, n is an integer of 1-3, and a is an integer of 1-3.

In the said Formula (3), p which shows the carbon number of a saturated alkyl group is an integer of 3-20, Preferably it is an integer of 4-16.

When p contains a saturated alkyl group containing (alkyl) alkoxysilane of less than 3, sufficient flexibility may not be expressed in the obtained film formation material layer. On the other hand, a saturated alkyl group-containing (alkyl) alkoxysilane having a p value of more than 20 has a high decomposition temperature, and in the firing step by the method for producing a plasma display of the present invention, the organic material (the silane derivative) is completely decomposed. A part of organic substance remains in inorganic layers, such as a dielectric layer formed in the state which is not removed, and as a result, light transmittance may fall in the case of a dielectric layer.

Specific examples of the silyl group-containing compound represented by the general formula (3) include n-propyldimethylmethoxysilane, n-butyldimethylmethoxysilane, n-decyldimethylmethoxysilane, n-hexadecyldimethylmethoxysilane, n-ecosil Saturated alkyl dimethyl methoxysilanes such as dimethyl methoxysilane (a = 1, m = 1, n = 1);

saturated alkyl di such as n-propyldiethylmethoxysilane, n-butyldiethylmethoxysilane, n-decyldiethylmethoxysilane, n-hexadecyldiethylmethoxysilane, n-ecosyldiethylmethoxysilane Ethyl methoxysilanes (a = 1, m = 1, n = 2);

saturated alkyldipropyl methoxysilanes such as n-butyldipropylmethoxysilane, n-decyldipropylmethoxysilane, n-hexadecyldipropylmethoxysilane and n-ecosyldipropylmethoxysilane (a = 1 , m = 1, n = 3);

Saturated alkyl dimethyl ethoxy silanes, such as n-propyl dimethyl ethoxysilane, n-butyl dimethyl ethoxy silane, n-decyl dimethyl ethoxy silane, n-hexadecyl dimethyl ethoxy silane, n-eicosyl dimethyl ethoxy silane, etc. (a = 1, m = 2, n = 1);

Saturated alkyl di, such as n-propyldiethylethoxysilane, n-butyldiethylethoxysilane, n-decyldiethylethoxysilane, n-hexadecyldiethylethoxysilane, and n-eicosyldiethylethoxysilane Ethyl ethoxysilanes (a = 1, m = 2, n = 2);

saturated alkyldipropylethoxysilanes such as n-butyldipropylethoxysilane, n-decyldipropylethoxysilane, n-hexadecyldipropyl ethoxysilane and n-ecosyldipropylethoxysilane (a = 1 , m = 2, n = 3):

Saturated alkyl dimethyl propoxy silanes, such as n-propyl dimethyl propoxy silane, n-butyl dimethyl propoxy silane, n-decyl dimethyl propoxy silane, n-hexadecyl dimethyl propoxy silane, n-eicosyl dimethyl propoxy silane, etc. (a = 1, m = 3, n = 1);

Saturated alkyl di, such as n-propyl diethyl propoxy silane, n-butyl diethyl propoxy silane, n-decyl diethyl propoxy silane, n-hexadecyl diethyl propoxy silane, and n-ecosyl diethyl propoxy silane Ethylpropoxysilanes (a = 1, m = 3, n = 2):

Saturated alkyl dipropyl propoxy silanes, such as n-butyl dipropyl propoxy silane, n-decyl dipropyl propoxy silane, n-hexadecyl dipropyl propoxy silane, and n-eicosyl dipropyl propoxy silane (a = 1 , m = 3, n = 3);

Saturated alkyl methyl dimethoxy silanes, such as n-propylmethyldimethoxysilane, n-butylmethyldimethoxysilane, n-decylmethyldimethoxysilane, n-hexadecylmethyldimethoxysilane, and n-eicosylmethyldimethoxysilane (a = 2, m = 1, n = 1);

saturated alkylethyldimethoxysilanes such as n-propylethyldimethoxysilane, n-butylethyldimethoxysilane, n-decylethyldimethoxysilane, n-hexadecylethyldimethoxysilane, and n-ecosylethyldimethoxysilane ( a = 2, m = 1, n = 2);

Saturated alkyl propyl dimethoxy silanes, such as n-butyl propyl dimethoxy silane, n-decyl propyl dimethoxy silane, n-hexadecyl propyl dimethoxy silane, and n-eicosyl propyl dimethoxy silane (a = 2, m = 1). , n = 3)                     

Saturated alkylmethyl diethoxysilanes, such as n-propylmethyl diethoxysilane, n-butylmethyl diethoxysilane, n-decylmethyl diethoxysilane, n-hexadecylmethyl diethoxysilane, and n-eicosylmethyl diethoxysilane (a = 2, m = 2, n = 1):

Saturated alkyl ethyl diethoxysilanes, such as n-propyl ethyl diethoxy silane, n-butyl ethyl diethoxy silane, n-decyl ethyl diethoxy silane, n-hexadecyl ethyl diethoxy silane, and n-eicosyl ethyl diethoxy silane. (a = 2, m = 2, n = 2);

Saturated alkyl propyl diethoxysilanes, such as n-butyl propyl diethoxysilane, n-decyl propyl diethoxy silane, n-hexadecyl propyl diethoxy silane, and n- ethoxy propyl diethoxy silane (a = 2, m = 2) , n = 3);

saturated alkyls such as n-propylmethyldipropoxysilane, n-butylmethyldipropoxysilane, n-decylmethyldipropoxysilane, n-hexadecylmethyldipropoxysilane, n-ecosylmethyldipropoxysilane Methyldipropoxysilanes (a = 2, m = 3, n = 1);

saturated alkyls such as n-propylethyldipropoxysilane, n-butylethyldipropoxysilane, n-decylethyldipropoxysilane, n-hexadecylethyldipropoxysilane, n-ecosylethyldipropoxysilane Ethyldipropoxysilanes (a = 2, m = 3, n = 2);

Saturated alkyl propyl dipropoxy silanes, such as n-butyl propyl dipropoxy silane, n-decyl propyl dipropoxy silane, n-hexadecyl propyl dipropoxy silane, and n- ecoxy propyl dipropoxy silane (a = 2, m = 3, n = 3);

Saturated alkyl trimethoxysilanes, such as n-propyl trimethoxysilane, n-butyl trimethoxysilane, n-decyl trimethoxysilane, n-hexadecyl trimethoxysilane, and n-eicosyl trimethoxysilane (a = 3, m = 1);

Saturated alkyl triethoxysilanes, such as n-propyl triethoxysilane, n-butyl triethoxysilane, n-decyl triethoxysilane, n-hexadecyl triethoxysilane, and n-eicosyl triethoxysilane (a = 3, m = 2);

Saturated alkyl tripropoxy silanes, such as n-propyl tripropoxy silane, n-butyl tripropoxy silane, n-decyl tripropoxy silane, n-hexadecyl tripropoxy silane, and n-eicosyl tripropoxy silane (a = 3, m = 3), etc. These can be used individually or in combination of 2 or more types.

Among them, n-butyltrimethoxysilane, n-decyltrimethoxysilane, n-hexadecyltrimethoxysilane, n-decyldimethylmethoxysilane, n-hexadecyldimethylmethoxysilane, n-butyltrie Oxysilane, n-decyltriethoxysilane, n-hexadecyltriethoxysilane, n-decylethyl diethoxysilane, n-hexadecylethyl diethoxysilane, n-butyl tripropoxysilane, n-decyl triprop Foxysilane, n-hexadecyl tripropoxysilane, etc. are especially preferable.

As a content rate of a silyl group containing compound, it is preferable that it is 5 mass parts or less with respect to 100 mass parts of inorganic particles, More preferably, it is 3 mass parts or less. When the proportion of the silyl group-containing compound is excessive, when preserving the inorganic particle-containing composition obtained, the viscosity increases over time, or when the silyl group-containing compounds react, which may cause organic substances to remain after firing. There is.

Examples of the composition for forming the dielectric layer, which is preferable as an example of the inorganic particle-containing composition, include inorganic particles (glass powder) at 50 to 80 wt% of lead oxide, 5 to 20 wt% of boron oxide, and 10 to 30 wt% of silicon oxide. A composition containing 100 parts by weight of the mixture, 10 to 30 parts by weight of polybutyl methacrylate as a binder resin, 0.1 to 10 parts by weight of a specific plasticizer, and 10 to 50 parts by weight of propylene glycol monomethyl ether as a solvent as essential components. Can be mentioned.

The composition of this invention can be manufactured by kneading the said inorganic particle, binder resin, a specific plasticizer and a solvent, and arbitrary components using kneading machines, such as a roll kneader, a mixer, and a homo mixer.

The composition of the present invention prepared as described above is a paste-like composition having fluidity suitable for application, and its viscosity is usually 1,000 to 30,000 cp, preferably 3,000 to 10,000 cp.

The composition of this invention can be used especially suitably in order to manufacture the transfer film (transfer film of this invention) mentioned below.

The composition of the present invention is also suitable for a method of forming a film forming material layer by applying the composition directly to the surface of a substrate by a method of forming a film forming material layer known in the art, that is, a screen printing method or the like, and drying the coating film. Can be used.

<Transfer film>

The transfer film of the present invention is a composite film suitably used in the process of forming a component of a PDP, in particular, the process of forming a dielectric layer, and is a film forming material formed by applying the composition of the present invention onto a support film and drying the coating film. Made of layers.                     

That is, in the transfer film of the present invention, a film forming material layer containing inorganic particles, a binder resin, and a specific plasticizer is formed on a support film.

The transfer film of the present invention may be a laminate (laminated film) formed by forming a resist film to be described later on a support film, applying the composition of the present invention thereon, and drying the film.

(1) Composition of the transfer film:

Fig. 2 (a) is a schematic sectional view which shows the transfer film of this invention wound up in roll shape, and Fig. 2 (b) is sectional drawing (partial detail drawing of (a)] which shows the laminated constitution of this transfer film.

The transfer film shown in FIG. 2 is a composite film used in order to form the dielectric layer which comprises a PDP as an example of the transfer film of this invention, and can peel normally on the support film F1 and the surface of this support film F1. It is comprised by the film formation material layer F2 formed easily, and the cover film F3 provided in the surface of this film formation material layer F2 so that peeling is easy. The cover film F3 may not be used depending on the property of the film forming material layer F2.

It is preferable that the support film (F1) which comprises a transfer film is a resin film which has heat resistance and solvent resistance, and has flexibility. Since the support film F1 is flexible, a paste-like composition (composition of the present invention) can be applied using a roll coater, a blade coater, or the like, thereby forming a film forming material layer with a uniform film thickness. At the same time, the formed film forming material layer can be stored and supplied in a rolled state.

As the resin forming the supporting film (F1), for example, fluorine resins such as polyethylene terephthalate, polyester, polyethylene, polypropylene, polystyrene, polyimide, polyvinyl alcohol, polyvinyl chloride, polyfluoroethylene, nylon, Cellulose, and the like. The thickness of the support film F1 is 20-100 micrometers, for example.

The film formation material layer (F2) which comprises a transfer film is a layer which becomes a glass sintered compact (dielectric layer) by baking, and contains glass powder (inorganic particle), binder resin, and a specific plasticizer as essential components.

The thickness of the film forming material layer (F2) also varies depending on the content of the glass powder, the type and size of the panel, and the like, for example, 5 to 200 µm, preferably 10 to 100 µm. When the thickness is less than 5 µm, the film thickness of the finally formed dielectric layer becomes too small, and desired dielectric properties may not be secured. Usually, when this thickness is 10-100 micrometers, the film thickness of the dielectric layer calculated | required for a large panel can fully be ensured.

The cover film F3 which comprises a transfer film is a film for protecting the surface (contact surface with a glass substrate) of the film formation material layer F2. It is preferable that this cover film (F3) is also a resin film which has flexibility. As resin which forms cover film F3, resin illustrated as forming support film F1 is mentioned. The thickness of cover film F3 is 20-100 micrometers, for example.

(2) Manufacturing Method of Transfer Film:                     

The transfer film of this invention can be manufactured by forming a film forming material layer F2 on the support film F1, and providing (pressing) the cover film F3 on the said film forming material layer F2.

As a formation method of a film formation material layer, the method of apply | coating the composition of this invention containing an inorganic particle, binder resin, a specific plasticizer, and a solvent on a support film, drying a coating film, and removing part or all of the said solvent is mentioned. .

As a method of apply | coating the composition of this invention on a support film, it is apply | coated by a roll coater from a viewpoint that a film thickness is large and it can form efficiently the coating film excellent in the uniformity of film thickness, for example. The method, the coating method by blade coaters, such as a doctor blade, the coating method by a curtain coater, the coating method by a wire coater, etc. are mentioned as a preferable thing.

Moreover, it is preferable that the mold release process is given to the surface of the support film to which the composition of this invention is apply | coated. Thereby, after transferring a film forming material layer, a support film can be peeled easily from this film forming material layer.

The coating film by the composition of this invention formed on the support film is dried, and one part or all part of a solvent is removed, and it becomes a film formation material layer which comprises a transfer film. As drying conditions of the coating film by the composition of this invention, it becomes about 0.1 to 30 minutes at 40-150 degreeC, for example. The residual ratio of the solvent (the content ratio of the solvent in the film forming material layer) after drying is usually 10% by weight or less, and is 1 to 5 from the viewpoint of exhibiting the adhesiveness to the substrate and the appropriate shape retention to the film forming material layer. It is preferable that it is weight%.

It is preferable that the mold release process is performed also on the surface of the cover film (usually thermocompression-bonded) provided on the film formation material layer formed as mentioned above. Thereby, the cover film can be easily peeled from the film forming material layer before the film forming material layer is transferred.

(3) Transfer of Film Forming Material Layer (Use Method of Transfer Film):

The film forming material layer on the support film is collectively transferred to the surface of the substrate. According to the transfer film of the present invention, since the film forming material layer can be reliably formed on the glass substrate by such a simple operation, the process improvement (high efficiency) can be achieved in the process of forming components of the PDP such as the dielectric layer. At the same time, it is possible to improve the quality of the components to be formed (for example, to develop stable dielectric properties in the dielectric layer).

<Production Method of PDP (Formation of Dielectric Layer)>

The manufacturing method of the present invention includes a step of transferring a film forming material layer constituting the transfer film of the present invention to the surface of a substrate and forming a dielectric layer on the surface of the substrate by firing the transferred film forming material layer.

An example of the transfer process of the film formation material layer by the transfer film of the structure as shown in FIG. 2 is shown as follows.

(1) The transfer film of the state wound in roll shape is cut out to the magnitude | size according to the area of a board | substrate.                     

(2) After peeling off the cover film F3 from the surface of the film formation material layer F2 in the cut transfer film, the transfer film is superposed so that the surface of the film formation material layer F2 may contact the surface of a board | substrate. Let's do it.

(3) The heat roller is moved and thermocompressed on the transfer film superimposed on the substrate.

(4) The support film F1 is peeled off from the film formation material layer F2 fixed to the board | substrate by thermocompression bonding.

By the above operation, the film forming material layer F2 on the support film F1 is transferred onto the substrate. Here, as for transfer conditions, the surface temperature of a heating roller is 60-12 degreeC, the roll pressure by a heating roller is 1-5 kg / cm <^2> , and the moving speed of a heating roller is 0.2-10.0 m / min. Such an operation (transfer step) can be performed by a lamination device. In addition, the substrate may be preheated and the preheating temperature may be, for example, 40 to 100 ° C.

The film-forming material layer F2 formed on the surface of the substrate is baked to form an inorganic sintered body (dielectric layer). Here, the baking method is a method of arranging the substrate on which the film-forming material layer F2 is transferred, under a high temperature atmosphere. Thereby, the organic substance (for example, binder resin, residual solvent, a specific plasticizer, and various additives) contained in the film formation material layer F2 is decomposed and removed, and an inorganic particle is melt-sintered. Here, the firing temperature varies depending on the melting temperature of the substrate, the constituent material in the film forming material layer, and the like, but is, for example, 300 to 800 ° C, more preferably 400 to 600 ° C.                     

<Production Method of PDP (Formation of Components Using Photoresist Method)>

In the production method of the present invention, a film forming material layer constituting the transfer film of the present invention is transferred onto a substrate, a resist film is formed on the transferred film forming material layer, and the resist film is exposed to light to form a latent image of the resist pattern. The resist film is developed to present a resist pattern, the film forming material layer is etched to form a pattern layer corresponding to the resist pattern, and the pattern layer is fired to form a barrier rib, an electrode, a resistor, a dielectric layer, Forming a component selected from phosphors, color filters and black matrices.

Or a laminated film of a resist film and the film forming material layer obtained from the inorganic particle containing composition of this invention is formed on a support film, the laminated film formed on the support film is transferred onto a board | substrate, and the resist film which comprises this laminated film is The exposure process forms a latent image of the resist pattern, the resist film is developed to render the resist pattern present, the film forming material layer is etched to form a pattern layer corresponding to the resist pattern, and the pattern layer is calcined. Thereby forming a component selected from partitions, electrodes, resistors, dielectric layers, phosphors, color filters, and black matrices.

Hereinafter, the method of forming the "bump" which is a component of a PDP in the surface on a back substrate is demonstrated. In this method, [1] the film forming material layer transfer step, the [2] resist film forming step, the [3] resist film exposing step, the [4] resist film developing step, the [5] film forming material layer etching step, [6] The partition wall is formed on the surface of the substrate by the baking step of the partition pattern.

3 and 4 are schematic cross-sectional views showing a series of processes for forming the partition wall. 3 and 4, 11 is a glass substrate, and on this glass substrate, electrodes 12 for generating plasma are arranged at equal intervals, and on the surface of the glass substrate 11 so as to cover the electrodes 12. The dielectric layer 13 is formed.

In addition, in this invention, as an aspect which "transfers a film forming material layer on a board | substrate", in addition to the aspect which transfers to the surface of the said glass substrate 11, the aspect which transfers to the surface of the said dielectric layer 13 It shall also be included.

(1) Transfer process of film forming material layer:

An example of the transfer process of a film forming material layer is as follows.

After peeling off the cover film (not shown) of the transfer film, as shown in FIG. 3 (b), the transfer film 20 is brought into contact with the surface of the film forming material layer 21 on the surface of the dielectric layer 13. After overlapping and thermocompression-bonding this transfer film 20 with a heating roller etc., the support film 22 is peeled off from the film formation material layer 21. FIG. As a result, as shown in FIG. 3 (c), the film forming material layer 21 is transferred to and adhered to the surface of the dielectric layer 13. Here, the transfer conditions are, for example, the surface temperature of the heating roller is 80 to 140 ° C, the roll pressure by the heating roller is 1 to 5 kg / cm ² , the moving speed of the heating roller is from 0.1 to 0.1 m / Can represent minutes. In addition, the glass substrate 11 can be preheated, and can be 40-100 degreeC as a preheating temperature, for example.

(2) forming a resist film;

In this step, as shown in FIG. 3 (d), a resist film 31 is formed on the surface of the transferred film forming material layer 21. The resist constituting the resist film 31 may be one of a positive resist and a negative resist.

The resist film 31 can be formed by applying a resist in accordance with various methods such as a screen printing method, a roll coating method, a rotary coating method, a flexible coating method, and then drying the coating film. Here, the drying temperature of a coating film is about 60-130 degreeC normally.

Furthermore, it can form by transferring the resist film formed on the support film to the surface of the film formation material layer 21. According to this forming method, the number of steps of forming the resist film can be reduced, and the film thickness uniformity of the resulting resist film is excellent. Therefore, the development process of the resist film and the etching process of the film forming material layer are performed uniformly, and the partition wall formed. The height and shape of are uniform.

The film thickness of the resist film 31 is 0.1-40 micrometers normally, Preferably it is 0.5-20 micrometers.

(3) Exposure process of resist film:

In this step, as shown in FIG. 3 (E), radiation of ultraviolet rays or the like is selectively irradiated to the surface of the resist film 31 formed on the film forming material layer 21 through an exposure mask M (exposure). The latent image of a resist pattern is formed. In FIG. 3E, MA and MB are light transmitting portions and light blocking portions in the exposure mask M, respectively.

Here, as a radiation irradiation apparatus, it does not specifically limit, for example, the ultraviolet irradiation apparatus used by the said photolithographic method, the exposure apparatus used when manufacturing a semiconductor, and a liquid crystal display device.

(4) Developing process of resist film:

In this step, the exposed resist film is developed to present the resist pattern (latent image).

Here, as the development treatment conditions, depending on the kind of the resist film 31 and the like, the type, composition, and concentration of the developing solution, the developing time, the developing temperature, the developing method (for example, the dipping method, the shaking method, the shower method, the spray method, the puddle) Method), a developing apparatus, etc. can be selected suitably.

By this developing step, as shown in Fig. 4 (bar), the resist pattern 35 (pattern corresponding to the exposure mask M) composed of the resist remaining portion 35A and the resist removing portion 35B. Is formed.

This resist pattern 35 acts as an etching mask in the next step (etching step), and the constituent material (photocured resist) of the resist remaining portion 35A is formed more than the constituent material of the film forming material layer 21. It is necessary that the dissolution rate to the etching solution is small.

(5) an etching step of the film forming material layer;

In this step, the film forming material layer is etched to form a partition pattern layer corresponding to the resist pattern.

That is, as shown in Fig. 4 (g), the portion of the film forming material layer 21 corresponding to the resist removing portion 35B of the resist pattern 35 is dissolved in the etching solution and selectively removed. 4 (G) shows the state during the etching process.

Further, if the etching process is continued, as shown in Fig. 4A, a predetermined portion of the film forming material layer 21 is completely removed to expose the dielectric layer 13. As a result, the partition pattern layer 25 including the material layer remaining portion 25A and the material layer removing portion 25B is formed.

Here, as the etching treatment conditions, the type, composition, and concentration of the etching liquid, the treatment time, the treatment temperature, and the treatment method (for example, the dipping method, the shaking method, the shower method, and the spray method, depending on the kind of the film forming material layer 21, etc.). , Puddle method), a processing apparatus, etc. can be selected suitably.

Further, by selecting the types of the resist film 31 and the film forming material layer 21 so that the same solution as that used in the developing step can be used as the etching solution, the developing step and the etching step can be performed continuously. The improvement of the manufacturing efficiency by the simplification can be aimed at.

Here, it is preferable that the resist remaining portion 35A constituting the resist pattern 35 is gradually dissolved during the etching process and completely removed in the step (end time of etching process) in which the partition pattern layer 25 is formed.

In addition, even if part or all of the resist residual part 35A remains after the etching process, the resist residual part 35A is removed in the next baking step.

(6) The firing process of the partition pattern layer:

In this step, the partition pattern layer 25 is baked to form partition walls. As a result, a panel material is formed in which the organic material in the material layer remaining portion 25A is lost to form a partition wall, and the partition wall 40 is formed on the surface of the dielectric layer 13 as shown in FIG. 50) can be obtained. In this panel material 50, the space partitioned by the partition wall 40 (space derived from the material layer removal part 25B) becomes a plasma working space.

Here, the baking treatment temperature needs to be a temperature at which the organic substance in the material layer remaining portion 25A disappears, and is usually 400 to 600 ° C. In addition, baking time is 10 to 90 minutes normally.

Preferred Embodiments Using Photoresist Method

The formation method of the PDP of this invention is not limited to the method as shown in FIG. 3 and FIG.

Here, the formation method by the process of following (1)-(3) is mentioned as another preferable method for forming the component of a PDP.

(1) After forming a resist film on a support film, the film formation material layer is laminated | stacked and formed by apply | coating and drying the inorganic particle containing composition of this invention on this resist film. Here, when forming a resist film and a film forming material layer, a roll coater etc. can be used and a laminated film excellent in the uniformity of a film thickness can be formed on a support film by this.

(2) The laminated film of the resist film formed on the support film and the film forming material layer is transferred onto the substrate. The transfer conditions may be the same as those in the "transfer process of the film forming material layer".                     

(3) Operations similar to those of the above-described "exposure process of resist film", "development process of resist film", "etching process of film forming material layer" and "calcination process of partition pattern layer" are performed. In that case, it is preferable to perform the "development process of a resist film" and the "etching process of a film formation material layer" continuously, using the developing solution of a resist film and the etching liquid of a film formation material layer as the same solution as previously described.

According to the above-described method, since the film forming material layer and the resist film are transferred onto the substrate collectively, the production efficiency can be further improved by simplifying the process.

As described above, a method of forming a "partition wall" as a component of the PDP has been described, but according to this method, an electrode, a resistor, a dielectric layer, a phosphor, a color filter, a black matrix and the like constituting the PDP can be formed.

Hereinafter, although the Example of this invention is described, this invention is not limited by these. In addition, "part" shows a "weight part" below.

<Example 1>

(1) Preparation of Glass Paste Composition (Inorganic Particle Containing Composition):

As a glass powder (inorganic particles), 70% by weight of lead oxide, 10% by weight boron oxide, 100 parts of the mixture (softening point 500 ℃) of PbO-B ₂ O ₃ -SiO ₂ system having the silicon oxide 20% by weight of the composition, the binder resin 17 parts of butyl methacrylate / 2-ethylhexyl methacrylate / hydroxypropyl methacrylate copolymer (weight ratio 30/60/10, weight average molecular weight: 100,000), glycerin-1,2-diacetyl as a specific plasticizer 4 parts of -3-monolaurate, 0.5 parts of n-decyltrimethoxysilane as a silyl group-containing compound, and 34.3 parts of propylene glycol monomethyl ether as a solvent were kneaded using a disperser to obtain a composition of the present invention having a viscosity of 3000 cps. Prepared.

(2) Preparation and Evaluation of Transfer Film (Flexibility and Handleability):

The composition of the present invention prepared in the above (1) was applied on a support film (400 mm wide, 30 m long, 38 μm thick) made of polyethylene terephthalate (PET) pre-release treated, using a blade coater, and formed The solvent was removed by drying the coating film at 100 ° C. for 5 minutes, whereby a film forming material layer having a thickness of 50 μm was formed on the supporting film. Subsequently, the transfer film of the present invention having the configuration as shown in Fig. 2 was produced by adhering a cover film (400 mm wide, 30 m long, 25 μm thick) made of PET previously released on the film forming material layer. It was.

The obtained transfer film had flexibility, and the operation to wind up in roll shape could be performed easily. Further, bending of the transfer film did not cause cracking (bending cracking) on the surface of the film forming material layer, and the film forming material layer had excellent flexibility.

Moreover, the cover film is peeled from this transfer film, and it superpose | polymerizes without pressing the said transfer film (laminated body of a support film and a film formation material layer) so that the surface of a film formation material layer may contact the surface of a glass substrate, Subsequently, when the said transfer film was peeled off from the surface of a glass substrate, the said film formation material layer showed a moderate adhesiveness with respect to a glass substrate, and can also peel a transfer film without causing cohesive failure to the said film formation material layer, The handleability (handling property) as a transfer film was good.

(3) transfer of the film forming material layer:

After peeling a cover film from the transfer film obtained by said (2), the said transfer film (support film and a so that the surface of a film formation material layer may contact the surface (fixed surface of a bus electrode) of the glass substrate for 20-inch panels). Laminated body with a film formation material layer), and this transfer film was thermocompression-bonded by the heating roll. Here, as crimping | compression-bonding conditions, the surface temperature of the heating roll was 110 degreeC, the roll pressure was 3 kg / cm, and the moving speed of the heating roll was 1 m / min.

After completion of the thermocompression treatment, the support film was peeled off from the film forming material layer fixed (heat-bonded) to the surface of the glass substrate, and transfer of the film forming material layer was completed.

In this transfer process, when peeling a support film, the film forming material layer did not cause cohesive failure, and the film forming material layer had sufficiently large film strength. In addition, the transferred film forming material layer had good adhesion to the surface of the glass substrate.

(4) Firing of Film Forming Material Layer (Formation of Dielectric Layer):

The glass substrate which transfer-formed the film formation material layer by said (3) is arrange | positioned in a baking furnace, the temperature in a furnace is heated up to 590 degreeC with the temperature increase rate of 10 degree-C / min from normal temperature, and it is 30 minutes in 590 degreeC temperature atmosphere. By baking over, the colorless transparent dielectric layer which consists of glass sintered compact was formed on the surface of a glass substrate.                     

When the film thickness (average film thickness and tolerance) of this dielectric layer was measured, it was the range of 30 micrometers + -0.4 micrometers, and was excellent in the uniformity of film thickness.

In addition, three-dimensional measurement was performed on the surface of the obtained dielectric layer using a non-contact film thickness meter (NH-3, manufactured by Ryoko Corporation), and surface roughness (Ra, Rb, Rc) was determined according to JIS standard (B O601). Moreover, Ra = 0.23 micrometer, Rb = 0.90 micrometer, Rc = O55 micrometer, and it was excellent in surface smoothness. Surface smoothness which satisfies all Ra = 0.5 micrometer or less, Rb = 1.5 micrometers or less, and Rc = 1.0 micrometer or less was made favorable.

In this way, five panel materials made of a glass substrate having a dielectric layer were produced, and the light transmittance (measurement wavelength 600 nm) of the formed dielectric layer was measured. As a result, it was confirmed that it was 89% and had good transparency.

<Example 2>

The glass paste composition was manufactured by the same composition and the same method as Example 1 except having contained 2 weight% of chromium powder in glass powder. Thereafter, a transfer film was produced in the same manner as in Example 1, and a dielectric layer was formed in the same manner as in Example 1.

When the film thickness (average film thickness and tolerance) of this dielectric layer was measured, it was 30 micrometers +/- 0.5 micrometer, and was excellent in the uniformity of film thickness.

Further, the surface roughness (Ra, Rb, Rc) was determined in the same manner as in Example 1 with respect to the surface of the obtained dielectric layer, and Ra = 0.25 µm, Rb = 0.94 µm and Rc = 0.57 µm, and the surface smoothness was excellent.                     

In addition, in this way, five panel materials made of a glass substrate having a dielectric layer were produced, and the light transmittance (measurement wavelength 600 nm) of the formed dielectric layer was measured, and it was confirmed that it was 89% and had good transparency.

According to the composition of this invention, the following effects are exhibited.

(1) Components of the PDP (eg, partition walls, electrodes, resistors, dielectric layers, phosphors, color filters, and black matrices) having excellent surface smoothness can be formed suitably.

(2) A glass sintered body having a high light transmittance (for example, dielectric layers and partition walls constituting PDP) can be suitably formed.

(3) The transfer film excellent in the flexibility of the film forming material layer can be manufactured.

(4) A transfer film excellent in transferability (heat adhesion to a substrate) of the film forming material layer can be produced.

According to the transfer film of this invention, the following effects are exhibited.

(1) The component (especially dielectric layer) of PDP which is excellent in surface smoothness can be formed efficiently.

(2) The flexibility of the film forming material layer is excellent, and bending cracks (cracking) do not occur on the surface of the film forming material layer.

(3) It is excellent in flexibility, and the operation to wind up in roll shape can be performed easily.

(4) The film-forming material layer exhibited suitable adhesion, and its handleability (handling property) was also good.                     

(5) The transfer property (heat adhesion to the substrate) of the film forming material layer is excellent.

According to the manufacturing method of this invention, the following effects are exhibited.

(1) Components of the PDP (eg, partition walls, electrodes, resistors, dielectric layers, phosphors, color filters, and black matrices) having excellent surface smoothness can be effectively formed.

(2) PDPs with high positional accuracy of components can be efficiently formed.

(4) A dielectric layer having a large film thickness can be efficiently formed.

(5) A dielectric layer required for a large panel can be efficiently formed.

(6) A PDP having a dielectric layer excellent in film uniformity and surface smoothness can be efficiently produced.

Claims (5)

[A] inorganic particles, [B] an acrylic resin, and [C] a compound represented by Chemical Formula 1 And an inorganic particle containing 5 to 80 parts by weight of the [B] acrylic resin and 0.1 to 20 parts by weight of the compound represented by the following [C]: . <Formula 1>

Wherein one of R ¹ , R ² and R ³ represents a group represented by -CO-A (wherein A represents an alkyl group having 5 to 20 carbon atoms), and the other two are each independently a hydrogen atom, acetyl Group or propanoyl group. The film forming material layer obtained from the inorganic particle containing composition of Claim 1 is included, The transfer film characterized by the above-mentioned. A process for forming a dielectric layer on the substrate by transferring the film forming material layer obtained from the inorganic particle-containing composition according to claim 1 onto a substrate and firing the transferred film forming material layer. Method of manufacturing the panel. The film forming material layer obtained from the inorganic particle-containing composition according to claim 1 is transferred onto a substrate, a resist film is formed on the transferred film forming material layer, and the resist film is exposed to light to form a latent image of the resist pattern. The resist film is developed to present a resist pattern, the film forming material layer is etched to form a pattern layer corresponding to the resist pattern, and the pattern layer is fired to form a partition wall, an electrode, a resistor, a dielectric layer, a phosphor, and a color. A method of manufacturing a plasma display panel, comprising the step of forming a component selected from a filter and a black matrix. A laminated film of a resist film and a film forming material layer obtained from the inorganic particle-containing composition according to claim 1 is formed on a supporting film, the laminated film formed on the supporting film is transferred onto a substrate, and the resist film constituting the laminated film is formed. The exposure process forms a latent image of the resist pattern, the resist film is developed to render the resist pattern present, the film forming material layer is etched to form a pattern layer corresponding to the resist pattern, and the pattern layer is calcined. Thereby forming a component selected from partitions, electrodes, resistors, dielectric layers, phosphors, color filters, and black matrices.

Images