KR100849619B1 - 알칼리 용해성 중합체 및 이를 포함하는 감광성과 절연성을지니는 조성물 - Google Patents
알칼리 용해성 중합체 및 이를 포함하는 감광성과 절연성을지니는 조성물 Download PDFInfo
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- KR100849619B1 KR100849619B1 KR1020060108361A KR20060108361A KR100849619B1 KR 100849619 B1 KR100849619 B1 KR 100849619B1 KR 1020060108361 A KR1020060108361 A KR 1020060108361A KR 20060108361 A KR20060108361 A KR 20060108361A KR 100849619 B1 KR100849619 B1 KR 100849619B1
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- formula
- alkali
- soluble polymer
- carbon atoms
- monomer
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- VMUDYLXQDGDGSH-UHFFFAOYSA-N COc(c1c2C3C=CC1C3)ccc2OC#[I] Chemical compound COc(c1c2C3C=CC1C3)ccc2OC#[I] VMUDYLXQDGDGSH-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F232/00—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F32/00—Homopolymers and copolymers of cyclic compounds having no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
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- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
Claims (12)
- 제 1 항에 있어서,1,000~10,000의 중량평균분자량을 가지는 알칼리 용해성 중합체.
- 제 1 항에 있어서,m=0.2~0.5, n=0.2~0.4, o=0.1~0.3, p=0.2~0.5인 알칼리 용해성 중합체.
- 제 4 항에 있어서,상기 유기용매는 테트라하이드로퓨란인 알칼리 용해성 중합체의 제조방법.
- 삭제
- 삭제
- 제 8 항에 있어서,상기 광개시제는 350~450nm의 파장을 갖는 브로드밴드(broad band) 영역에서 감광성을 지니는 조성물.
- 제 8 항에 있어서,알칼리 용해성 중합체: DPHA: 광개시제가 1.4~1.8: 1.4~1.8: 1의 중량비로 포함되는 조성물.
- 소정의 하부구조가 형성된 웨이퍼 상에 제 8 항, 제 10 항 및 제 11 항 중 어느 한 항에 의한 조성물을 도포하는 단계; 및상기 조성물이 도포된 웨이퍼에 대하여 노광 및 현상공정을 진행하여 패턴을 형성하는 단계를 포함하는 네거티브형 패턴의 형성방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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KR1020050106487 | 2005-11-08 | ||
KR20050106487 | 2005-11-08 |
Publications (2)
Publication Number | Publication Date |
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KR20070049564A KR20070049564A (ko) | 2007-05-11 |
KR100849619B1 true KR100849619B1 (ko) | 2008-07-31 |
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KR1020060108361A KR100849619B1 (ko) | 2005-11-08 | 2006-11-03 | 알칼리 용해성 중합체 및 이를 포함하는 감광성과 절연성을지니는 조성물 |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19990081720A (ko) * | 1998-04-30 | 1999-11-15 | 김영환 | 중합체 및 이를 이용한 미세패턴의 형성방법 |
KR20010011604A (ko) * | 1999-07-29 | 2001-02-15 | 윤종용 | 실리콘을 포함하는 포토레지스트 조성물 |
US6444408B1 (en) | 2000-02-28 | 2002-09-03 | International Business Machines Corporation | High silicon content monomers and polymers suitable for 193 nm bilayer resists |
US6670093B2 (en) | 2001-04-06 | 2003-12-30 | Industrial Technology Research Institute | Silicon-containing copolymer and photosensitive resin composition containing the same |
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2006
- 2006-11-03 KR KR1020060108361A patent/KR100849619B1/ko active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19990081720A (ko) * | 1998-04-30 | 1999-11-15 | 김영환 | 중합체 및 이를 이용한 미세패턴의 형성방법 |
KR20010011604A (ko) * | 1999-07-29 | 2001-02-15 | 윤종용 | 실리콘을 포함하는 포토레지스트 조성물 |
US6444408B1 (en) | 2000-02-28 | 2002-09-03 | International Business Machines Corporation | High silicon content monomers and polymers suitable for 193 nm bilayer resists |
US6670093B2 (en) | 2001-04-06 | 2003-12-30 | Industrial Technology Research Institute | Silicon-containing copolymer and photosensitive resin composition containing the same |
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KR20070049564A (ko) | 2007-05-11 |
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