KR100841585B1 - 듀얼 뱅크 기입-중-판독 플래시를 동작시키는 시스템 및방법 - Google Patents

듀얼 뱅크 기입-중-판독 플래시를 동작시키는 시스템 및방법 Download PDF

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Publication number
KR100841585B1
KR100841585B1 KR1020067010384A KR20067010384A KR100841585B1 KR 100841585 B1 KR100841585 B1 KR 100841585B1 KR 1020067010384 A KR1020067010384 A KR 1020067010384A KR 20067010384 A KR20067010384 A KR 20067010384A KR 100841585 B1 KR100841585 B1 KR 100841585B1
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South Korea
Prior art keywords
bank
data
code
flash
flash memory
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KR1020067010384A
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English (en)
Korean (ko)
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KR20060092273A (ko
Inventor
클리프턴 이 스콧
존 가티
라야푸디 락스미
Original Assignee
퀄컴 인코포레이티드
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/102—External programming circuits, e.g. EPROM programmers; In-circuit programming or reprogramming; EPROM emulators
    • G11C16/105—Circuits or methods for updating contents of nonvolatile memory, especially with 'security' features to ensure reliable replacement, i.e. preventing that old data is lost before new data is reliably written
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/102—External programming circuits, e.g. EPROM programmers; In-circuit programming or reprogramming; EPROM emulators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
    • G11C2216/22—Nonvolatile memory in which reading can be carried out from one memory bank or array whilst a word or sector in another bank or array is being erased or programmed simultaneously

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  • Engineering & Computer Science (AREA)
  • Computer Security & Cryptography (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Read Only Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Mobile Radio Communication Systems (AREA)
KR1020067010384A 2003-11-19 2004-11-15 듀얼 뱅크 기입-중-판독 플래시를 동작시키는 시스템 및방법 Expired - Fee Related KR100841585B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/718,279 US7210002B2 (en) 2003-11-19 2003-11-19 System and method for operating dual bank read-while-write flash
US10/718,279 2003-11-19

Publications (2)

Publication Number Publication Date
KR20060092273A KR20060092273A (ko) 2006-08-22
KR100841585B1 true KR100841585B1 (ko) 2008-06-26

Family

ID=34574660

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020067010384A Expired - Fee Related KR100841585B1 (ko) 2003-11-19 2004-11-15 듀얼 뱅크 기입-중-판독 플래시를 동작시키는 시스템 및방법

Country Status (7)

Country Link
US (1) US7210002B2 (https=)
EP (1) EP1687723A2 (https=)
JP (1) JP4515459B2 (https=)
KR (1) KR100841585B1 (https=)
CN (1) CN1882922A (https=)
CA (1) CA2545451C (https=)
WO (1) WO2005052799A2 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7257023B2 (en) * 2005-08-10 2007-08-14 Taiwan Semiconductor Manufacturing Co. Hybrid non-volatile memory device
CN1963787A (zh) * 2005-11-10 2007-05-16 其乐达科技股份有限公司 嵌入式系统的快闪存储器存取方法及存取电路
KR100842577B1 (ko) 2006-11-07 2008-07-01 삼성전자주식회사 소프트웨어 다운로드 기능을 갖춘 임베디드 시스템과 그운용 방법
US20090199014A1 (en) * 2008-02-04 2009-08-06 Honeywell International Inc. System and method for securing and executing a flash routine
US8392762B2 (en) * 2008-02-04 2013-03-05 Honeywell International Inc. System and method for detection and prevention of flash corruption
WO2009105362A1 (en) * 2008-02-19 2009-08-27 Rambus Inc. Multi-bank flash memory architecture with assignable resources
US20130268780A1 (en) * 2012-04-10 2013-10-10 John Wong Portable access and power supply apparatus

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020169923A1 (en) * 2001-05-11 2002-11-14 Pei-Chao Chen Microcomputer with reduced memory usage and associated method

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2251324B (en) * 1990-12-31 1995-05-10 Intel Corp File structure for a non-volatile semiconductor memory
JPH07261997A (ja) * 1994-03-22 1995-10-13 Fanuc Ltd フラッシュｒｏｍ管理方式
GB9601900D0 (en) 1996-01-31 1996-04-03 Neopost Ltd Electronic apparatus including a memory device and method of reprogramming the memory device
US6493788B1 (en) * 1996-10-28 2002-12-10 Macronix International Co., Ltd. Processor with embedded in-circuit programming structures
US6032248A (en) * 1998-04-29 2000-02-29 Atmel Corporation Microcontroller including a single memory module having a data memory sector and a code memory sector and supporting simultaneous read/write access to both sectors
US6275894B1 (en) * 1998-09-23 2001-08-14 Advanced Micro Devices, Inc. Bank selector circuit for a simultaneous operation flash memory device with a flexible bank partition architecture
US6401160B1 (en) * 1999-03-31 2002-06-04 Intel Corporation Method and apparatus to permit adjustable code/data boundary in a nonvolatile memory
US6324628B1 (en) * 1999-08-24 2001-11-27 Trimble Navigation Limited Programming flash in a closed system
US6407949B1 (en) * 1999-12-17 2002-06-18 Qualcomm, Incorporated Mobile communication device having integrated embedded flash and SRAM memory
US6240040B1 (en) * 2000-03-15 2001-05-29 Advanced Micro Devices, Inc. Multiple bank simultaneous operation for a flash memory
GB2371887A (en) 2001-01-31 2002-08-07 Nokia Mobile Phones Ltd Client-server system for games playing
JP3574078B2 (ja) * 2001-03-16 2004-10-06 東京エレクトロンデバイス株式会社 記憶装置と記憶装置制御方法
US6614685B2 (en) * 2001-08-09 2003-09-02 Multi Level Memory Technology Flash memory array partitioning architectures
ITRM20010524A1 (it) * 2001-08-30 2003-02-28 Micron Technology Inc Struttura a schiera di memoria flash.
EP1345236B1 (en) 2002-03-14 2011-05-11 STMicroelectronics Srl A non-volatile memory device
JP2003303132A (ja) * 2002-04-08 2003-10-24 Matsushita Electric Ind Co Ltd 半導体メモリ制御装置
US7526598B2 (en) * 2003-03-03 2009-04-28 Sandisk Il, Ltd. Efficient flash memory device driver
US8108588B2 (en) * 2003-04-16 2012-01-31 Sandisk Il Ltd. Monolithic read-while-write flash memory device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020169923A1 (en) * 2001-05-11 2002-11-14 Pei-Chao Chen Microcomputer with reduced memory usage and associated method

Also Published As

Publication number Publication date
KR20060092273A (ko) 2006-08-22
US20050108467A1 (en) 2005-05-19
JP4515459B2 (ja) 2010-07-28
CA2545451C (en) 2010-11-09
JP2007511850A (ja) 2007-05-10
CN1882922A (zh) 2006-12-20
EP1687723A2 (en) 2006-08-09
WO2005052799A2 (en) 2005-06-09
WO2005052799A3 (en) 2006-05-26
US7210002B2 (en) 2007-04-24
CA2545451A1 (en) 2005-06-09

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