KR100838732B1 - 비정질 형성능이 우수한 철계 벌크비정질 합금 - Google Patents
비정질 형성능이 우수한 철계 벌크비정질 합금 Download PDFInfo
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- KR100838732B1 KR100838732B1 KR1020060131398A KR20060131398A KR100838732B1 KR 100838732 B1 KR100838732 B1 KR 100838732B1 KR 1020060131398 A KR1020060131398 A KR 1020060131398A KR 20060131398 A KR20060131398 A KR 20060131398A KR 100838732 B1 KR100838732 B1 KR 100838732B1
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C45/00—Amorphous alloys
- C22C45/02—Amorphous alloys with iron as the major constituent
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C2200/00—Crystalline structure
- C22C2200/02—Amorphous
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C2202/00—Physical properties
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Abstract
Description
Alloy Composition | Tx (K) | Tg (K) | Tl (K) | Tx (Tx-Tg) | Trg (Tg/Tl) | 압축 강도 (GPa) | 파괴 연신율 (%) | 경도 (Hv) |
Metalloid 10% | ||||||||
Fe73Cr12Mo2(C4B4P2)Si1Nb2 | - | - | 1429 | - | - | 2.32 | 27.03 | 481 |
Fe73Cr12Mo2(C4B2P4)Si1Nb2 | - | - | 1385 | - | - | 2.27 | 27.34 | 469 |
Fe73Cr12Mo2(C2B4P4)Si1Nb2 | - | - | 1416 | - | - | 2.30 | 25.80 | 474 |
Fe73Cr12Mo2(C6B2P2)Si1Nb2 | - | - | 1428 | - | - | 3.72 | 14.92 | 905 |
Fe73Cr12Mo2(C2B6P2)Si1Nb2 | - | - | 1447 | - | - | 2.23 | 18.70 | 483 |
Fe73Cr12Mo2(C2B2P6)Si1Nb2 RIBA 601 | 942 | 898 | 1348 | 44 | 0.62 | 2.40 | 25.16 | 504 |
Fe73Cr12Mo2(C8B1P1)Si1Nb2 RIBA 602 | 900 | 851 | 1460 | 49 | 0.58 | 3.50 | 20.80 | 632 |
Fe73Cr12Mo2(C1B8P1)Si1Nb2 | - | - | 1463 | - | - | 2.32 | 12.67 | 520 |
Fe73Cr12Mo2(C1B1P8)Si1Nb2 RIBA 603 | 932 | 885 | 1364 | 48 | 0.65 | 2.21 | 26.25 | 460 |
Fe73Cr12Mo2(C4B3P3)Si1Nb2 | - | - | 1401 | - | - | 2.14 | 18.80 | 486 |
Metalloid 15% | ||||||||
Fe68Cr12Mo2(C6B6P3)Si1Nb2 | - | - | 1412 | - | - | 2.70 | 9.81 | 771 |
Fe68Cr12Mo2(C6B3P6)Si1Nb2 | - | - | 1480 | - | - | 2.21 | 8.65 | 803 |
Fe68Cr12Mo2(C3B3P6)Si1Nb2 | - | - | 1413 | - | - | 2.50 | 10.49 | 673 |
Fe68Cr12Mo2(C7B4P4)Si1Nb2 | - | - | 1471 | - | - | 2.79 | 9.80 | 811 |
Fe68Cr12Mo2(C4B7P4)Si1Nb2 | - | - | 1421 | - | - | 2.17 | 9.27 | 703 |
Fe68Cr12Mo2(C4B4P7)Si1Nb2 | - | - | 1367 | - | - | 2.31 | 9.59 | 681 |
Fe68Cr12Mo2(C11B2P2)Si1Nb2 RIBA 604 | 897 | 852 | 1297 | 44.7 | 0.66 | 3.27 | 13.83 | 844 |
Fe68Cr12Mo2(C2B11P2)Si1Nb2 | - | - | 1445 | - | - | 2.48 | 8.60 | 971 |
Fe68Cr12Mo2(C2B2P11)Si1Nb2 | - | - | 1336 | - | - | 2.35 | 10.68 | 610 |
Fe68Cr12Mo2(C5B5P5)Si1Nb2 | - | - | 1453 | - | - | 2.52 | 9.73 | 781 |
Metalloid 21% | ||||||||
Fe63Cr12Mo2(C9B6P6)Si1Nb2 | 1071 | 1009 | 1411 | 62.3 | 0.71 | 0.89 | 3.82 | 1049 |
Fe63Cr12Mo2(C6B9P6)Si1Nb2 | 1007 | 982 | 1506 | 25.2 | 0.65 | 2.09 | 7.38 | 926 |
Fe63Cr12Mo2(C6B6P9)Si1Nb2 RIBA 605 | 810 | 787 | 1361 | 22.7 | 0.58 | 0.54 | 4.08 | 979 |
Fe63Cr12Mo2(C13B4P4)Si1Nb2 | 1005 | 981 | 1487 | 23.9 | 0.66 | 2.25 | 7.86 | 899 |
Fe63Cr12Mo2(C4B13P4)Si1Nb2 | - | - | 1386 | - | - | 2.01 | 7.59 | 933 |
Fe63Cr12Mo2(C4B4P13)Si1Nb2 | - | - | 1328 | - | - | 0.98 | 3.95 | 1083 |
Fe63Cr12Mo2(C17B2P2)Si1Nb2 | - | - | 1521 | - | - | 2.64 | 8.65 | 1094 |
Fe63Cr12Mo2(C2B17P2)Si1Nb2 | - | - | 1424 | - | - | 2.48 | 8.59 | 974 |
Fe63Cr12Mo2(C2B2P17)Si1Nb2 | - | - | 1371 | - | - | 2.37 | 8.54 | 1048 |
Fe63Cr12Mo2(C7B7P7)Si1Nb2 | - | - | 1450 | - | - | 0.96 | 4.69 | 1064 |
Claims (8)
- 삭제
- Cr : 12 ± 0.1at%, Mo : 2± 0.1at%, Si : 1± 0.1at%, Nb : 2± 0.1at%, C : 2± 0.1at%, B : 2± 0.1at%, P : 6± 0.1at%, 나머지는 Fe와 불순물의 조성비를 갖는 비정질 형성능이 우수한 철계 벌크비정질 합금.
- Cr : 12± 0.1at%, Mo : 2± 0.1at%, Si : 1± 0.1at%, Nb : 2± 0.1at%, C : 8± 0.1at%, B : 1± 0.1at%, P : 1± 0.1at%, 나머지는 Fe와 불순물의 조성비를 갖는 비정질 형성능이 우수한 철계 벌크비정질 합금.
- Cr : 12± 0.1at%, Mo : 2± 0.1at%, Si : 1± 0.1at%, Nb : 2± 0.1at%, C : 1± 0.1at%, B : 1± 0.1at%, P : 8± 0.1at%, 나머지는 Fe와 불순물의 조성비를 갖는 비정질 형성능이 우수한 철계 벌크비정질 합금.
- Cr : 12± 0.1at%, Mo : 2± 0.1at%, Si : 1± 0.1at%, Nb : 2± 0.1at%, C : 11± 0.1at%, B : 2± 0.1at%, P : 2± 0.1at%, 나머지는 Fe와 불순물의 조성비를 갖는 비정질 형성능이 우수한 철계 벌크비정질 합금.
- Cr : 12± 0.1at%, Mo : 2± 0.1at%, Si : 1± 0.1at%, Nb : 2± 0.1at%, C : 6± 0.1at%, B : 6± 0.1at%, P : 2± 0.1at%, 나머지는 Fe와 불순물의 조성비를 갖는 비정질 형성능이 우수한 철계 벌크비정질 합금.
- 제 2항 내지 제 6항 중 어느 한 항의 조성비를 갖는 합금계를 스트립 캐스팅 공정을 이용하여 폭 100~150mm, 두께 1-2mm의 판상으로 제작된 것을 특징으로 하는 비정질 형성능이 우수한 철계 벌크비정질 합금.
- 제 2항 내지 제 6항 중 어느 한 항의 조성비를 갖는 합금계를 사출주조 공정을 통해 지름2mm 봉상으로 제작된 것을 특징으로 하는 비정질 형성능이 우수한 철계 벌크비정질 합금.
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US7885100B2 (en) | 2008-03-12 | 2011-02-08 | Hynix Semiconductor Inc. | Phase change random access memory and layout method of the same |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03219058A (ja) * | 1989-11-22 | 1991-09-26 | Hitachi Metals Ltd | 超微結晶磁性合金 |
KR930012182B1 (ko) * | 1989-11-22 | 1993-12-24 | 히다찌 긴조꾸 가부시끼가이샤 | 초미세 결정입자를 갖는 자기합금과 그 제조방법 |
JPH1171658A (ja) | 1996-09-30 | 1999-03-16 | Unitika Ltd | Fe族基非晶質金属薄帯及び磁気マーカ |
WO2002018667A2 (en) * | 2000-09-01 | 2002-03-07 | A.M.T.P. Advanced Metal Production Ltd. | New amorphous fe-based alloys containing chromium |
KR20060056783A (ko) * | 2004-11-22 | 2006-05-25 | 경북대학교 산학협력단 | 철계 다원소 비정질 합금조성물 |
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03219058A (ja) * | 1989-11-22 | 1991-09-26 | Hitachi Metals Ltd | 超微結晶磁性合金 |
KR930012182B1 (ko) * | 1989-11-22 | 1993-12-24 | 히다찌 긴조꾸 가부시끼가이샤 | 초미세 결정입자를 갖는 자기합금과 그 제조방법 |
JPH1171658A (ja) | 1996-09-30 | 1999-03-16 | Unitika Ltd | Fe族基非晶質金属薄帯及び磁気マーカ |
WO2002018667A2 (en) * | 2000-09-01 | 2002-03-07 | A.M.T.P. Advanced Metal Production Ltd. | New amorphous fe-based alloys containing chromium |
WO2002018667A3 (en) | 2000-09-01 | 2002-08-29 | A M T P Advanced Metal Product | New amorphous fe-based alloys containing chromium |
KR20060056783A (ko) * | 2004-11-22 | 2006-05-25 | 경북대학교 산학협력단 | 철계 다원소 비정질 합금조성물 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7885100B2 (en) | 2008-03-12 | 2011-02-08 | Hynix Semiconductor Inc. | Phase change random access memory and layout method of the same |
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