KR100830839B1 - 증발원 - Google Patents
증발원 Download PDFInfo
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- KR100830839B1 KR100830839B1 KR1020080012558A KR20080012558A KR100830839B1 KR 100830839 B1 KR100830839 B1 KR 100830839B1 KR 1020080012558 A KR1020080012558 A KR 1020080012558A KR 20080012558 A KR20080012558 A KR 20080012558A KR 100830839 B1 KR100830839 B1 KR 100830839B1
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- 230000008020 evaporation Effects 0.000 claims abstract description 73
- 238000001704 evaporation Methods 0.000 claims abstract description 73
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 239000000463 material Substances 0.000 claims abstract description 30
- 238000010438 heat treatment Methods 0.000 claims abstract description 16
- 239000013077 target material Substances 0.000 claims abstract description 10
- 230000000903 blocking effect Effects 0.000 claims description 4
- 238000001514 detection method Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 claims 11
- 230000008021 deposition Effects 0.000 abstract description 27
- 239000010409 thin film Substances 0.000 abstract description 13
- 238000009834 vaporization Methods 0.000 abstract description 4
- 230000008016 vaporization Effects 0.000 abstract description 4
- 238000004904 shortening Methods 0.000 abstract description 3
- 238000000151 deposition Methods 0.000 description 28
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 239000011368 organic material Substances 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- WMAXWOOEPJQXEB-UHFFFAOYSA-N 2-phenyl-5-(4-phenylphenyl)-1,3,4-oxadiazole Chemical compound C1=CC=CC=C1C1=NN=C(C=2C=CC(=CC=2)C=2C=CC=CC=2)O1 WMAXWOOEPJQXEB-UHFFFAOYSA-N 0.000 description 1
- AWXGSYPUMWKTBR-UHFFFAOYSA-N 4-carbazol-9-yl-n,n-bis(4-carbazol-9-ylphenyl)aniline Chemical compound C12=CC=CC=C2C2=CC=CC=C2N1C1=CC=C(N(C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=C1 AWXGSYPUMWKTBR-UHFFFAOYSA-N 0.000 description 1
- DIVZFUBWFAOMCW-UHFFFAOYSA-N 4-n-(3-methylphenyl)-1-n,1-n-bis[4-(n-(3-methylphenyl)anilino)phenyl]-4-n-phenylbenzene-1,4-diamine Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)N(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 DIVZFUBWFAOMCW-UHFFFAOYSA-N 0.000 description 1
- 240000006829 Ficus sundaica Species 0.000 description 1
- 101000837344 Homo sapiens T-cell leukemia translocation-altered gene protein Proteins 0.000 description 1
- 102100028692 T-cell leukemia translocation-altered gene protein Human genes 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Optics & Photonics (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (12)
- 상부가 개방된 선형의 하우징;상기 하우징의 내부에 구비되어 있으며, 증발대상 물질이 충진되는 도가니;상기 도가니에 충진된 증발대상 물질을 가열하는 가열수단; 및상기 하우징의 개방된 상부에 결합되며, 상방으로 다수개의 개구홀이 형성되어 있는 덮개부재;를 포함하며,상기 덮개부재는 증착대상 기판이 속한 평면에 대한 수직 거리가 다르게 형성되되, 중심부에서 양단부쪽으로 갈수록 점진적으로 높아지는 계단형태로 형성되어 있으며, 상기 덮개 부재에 형성된 각각의 개구홀은 증발대상물질이 기판에 대하여 수직으로 배출되도록 증착 대상 기판이 속한 평면에 대하여 수직으로 배열되어 있는 것을 특징으로 하는 증발원.
- 제1항에 있어서,상기 다수개의 개구홀은 직경이 동일한 것을 특징으로 하는 증발원.
- 제1항에 있어서,상기 덮개부재는 일체로 형성되어 상기 하우징의 상부에 결합되는 것을 특징 으로 하는 증발원.
- 제1항에 있어서,상기 덮개부재는 높이에 따라 개별적으로 형성되어 상기 하우징의 상부에 결합되는 것을 특징으로 하는 증발원.
- 제1항에 있어서,상기 개구홀을 통해 분출되는 증발량을 검출하는 검출수단이 더 구비되는 것을 특징으로 하는 증발원.
- 제1항에 있어서,상기 증발물질이 상기 개구홀에서 응축되는 것을 방지하기 위하여 상기 덮개부재를 가열하는 보조 가열수단이 더 구비되는 것을 특징으로 하는 증발원.
- 제1항에 있어서,상기 개구홀은 상부의 내경이 하부의 내경보다 확대되도록 내벽이 경사지게 형성되는 것을 특징으로 하는 증발원.
- 제7항에 있어서,상기 개구홀의 내벽은 수평선을 기준으로 120∼150°의 경사각으로 형성되는 것을 특징으로 하는 증발원.
- 제1항에 있어서,상기 개구홀에는 상방으로 연장되어 돌출된 노즐이 더 구비되는 것을 특징으로 하는 증발원.
- 제1항에 있어서,상기 개구홀의 하방에는 상기 증발물질의 튐현상을 방지하기 위한 차단판이 더 구비되는 것을 특징으로 하는 증발원.
- 제1항에 있어서,상기 개구홀에는 하방으로 연장되는 가이드 부재가 더 구비되는 것을 특징으 로 하는 증발원.
- 제11항에 있어서,상기 가이드 부재는 내부가 중공 형성된 원통 또는 다각통인 것을 특징으로 하는 증발원.
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KR1020080012558A KR100830839B1 (ko) | 2008-02-12 | 2008-02-12 | 증발원 |
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KR1020080012558A KR100830839B1 (ko) | 2008-02-12 | 2008-02-12 | 증발원 |
Related Parent Applications (1)
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KR1020060027767A Division KR20070097633A (ko) | 2006-03-28 | 2006-03-28 | 증착 장치 |
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KR20080016720A KR20080016720A (ko) | 2008-02-21 |
KR100830839B1 true KR100830839B1 (ko) | 2008-05-20 |
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Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101094299B1 (ko) | 2009-12-17 | 2011-12-19 | 삼성모바일디스플레이주식회사 | 선형 증발원 및 이를 포함하는 증착 장치 |
KR102218677B1 (ko) * | 2014-01-03 | 2021-02-23 | 삼성디스플레이 주식회사 | 증착원 |
KR102227546B1 (ko) * | 2014-01-20 | 2021-03-15 | 주식회사 선익시스템 | 대용량 증발원 및 이를 포함하는 증착장치 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001247959A (ja) | 1999-12-27 | 2001-09-14 | Semiconductor Energy Lab Co Ltd | 成膜装置及び成膜方法 |
KR20030063015A (ko) * | 2002-01-22 | 2003-07-28 | 학교법인연세대학교 | 박막두께분포를 조절 가능한 선형 및 평면형 증발원 |
JP2003297570A (ja) | 2002-03-08 | 2003-10-17 | Eastman Kodak Co | 有機発光デバイス製造用のコーティング方法及び細長い熱物理蒸着源 |
JP2004269948A (ja) | 2003-03-07 | 2004-09-30 | Sony Corp | 成膜装置、成膜方法および表示装置の製造方法 |
KR20060111040A (ko) * | 2005-04-21 | 2006-10-26 | 황창훈 | 대용량도가니를 사용하는 대면적 유기박막 소자의 양산용증발원 |
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2008
- 2008-02-12 KR KR1020080012558A patent/KR100830839B1/ko active IP Right Grant
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001247959A (ja) | 1999-12-27 | 2001-09-14 | Semiconductor Energy Lab Co Ltd | 成膜装置及び成膜方法 |
KR20030063015A (ko) * | 2002-01-22 | 2003-07-28 | 학교법인연세대학교 | 박막두께분포를 조절 가능한 선형 및 평면형 증발원 |
JP2003297570A (ja) | 2002-03-08 | 2003-10-17 | Eastman Kodak Co | 有機発光デバイス製造用のコーティング方法及び細長い熱物理蒸着源 |
JP2004269948A (ja) | 2003-03-07 | 2004-09-30 | Sony Corp | 成膜装置、成膜方法および表示装置の製造方法 |
KR20060111040A (ko) * | 2005-04-21 | 2006-10-26 | 황창훈 | 대용량도가니를 사용하는 대면적 유기박막 소자의 양산용증발원 |
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