KR100817107B1 - Method for manufacturing color tile using thin film deposition method - Google Patents

Abstract

The present invention relates to a method of manufacturing a color tile using a thin film deposition method, and more particularly, to a method of manufacturing a color tile using a thin film deposition method capable of realizing various colors by using a metal and an alloy having high reflectance of visible light and an interference phenomenon of visible light by an oxide- And a manufacturing method thereof. For this purpose, the present invention provides a method of manufacturing a semiconductor device, including the steps of depositing aluminum (Al), silver (Ag), titanium (Ti), and chromium (Cr) using any one of a vacuum evaporation method, a sputtering method, and an ion plating method. A metal thin film deposition step of depositing a metal thin film on a tile in a thickness of 10 to 700 nm by depositing any one of nickel (Ni), tin (Sn), copper (Cu), stainless steel, and alloys thereof on a tile; And a protective film coating step of coating a transparent paint on the metal thin film to form a protective film. According to the present invention, it is possible to manufacture color tiles of various metal colors, and at the same time, it is possible to reduce the manufacturing cost by reducing the material compared to the case of using the tile as a metal material, and by using the interference phenomenon of visible light It is possible to manufacture a color tile of various colors, thereby enabling various designs to be implemented in an interior and exterior of a building, and it is possible to manufacture a color tile having a unique color of a ceramic material.

Color tile, thin film deposition, metal thin film, ceramic thin film, transparent oxide thin film,

Description

[0001] The present invention relates to a method of manufacturing a color tile using a thin film deposition method,

FIGS. 1A and 1B are a schematic view (a) of a color tile fabricated by a color tile manufacturing method using the thin film deposition method according to the first embodiment of the present invention, a photograph (b) of a tile used as a base material, Photo of color tiles of metallic color (c).

FIGS. 2A and 2B are a schematic (a) and a photograph (b) of a color tile produced by the method of manufacturing a color tile using the thin film deposition method according to the second embodiment of the present invention.

FIGS. 3A and 3B are a schematic (a) and a photograph (b) of a color tile produced by the method of manufacturing a color tile using the thin film deposition method according to the third embodiment of the present invention.

Description of the Related Art [0002]

10: color tile 110: base metal tile

120: metal thin film 130: protective film

240: Transparent oxide thin film 350: Ceramic thin film

The present invention relates to a method of manufacturing a color tile using a thin film deposition method, and more particularly, to a method of manufacturing a color tile by depositing a metal and an alloy thereof having a high reflectance of visible light on a tile to a thickness of several hundreds nm by using a thin film deposition method, The present invention relates to a method of manufacturing a color tile using a thin film deposition method capable of realizing various colors using an interference phenomenon of a visible light ray by depositing an oxide based transparent thin film on a tile formed thereon to a predetermined thickness.

In recent years, tiles used as interior and exterior materials have been manufactured to have various colors and shapes in order to add design elements in addition to their original functions.

However, since the color of a general tile is very limited due to the combination of paints, there is a problem that it is difficult to realize a unique color or unique color for highlighting a design element.

On the other hand, when a tile is used as a metal material, a thickness of at least 2 mm is required. Therefore, when the material itself is expensive, such as titanium, the manufacturing cost is increased.

Disclosure of Invention Technical Problem [8] The present invention has been proposed in order to solve the above-mentioned problems, and it is an object of the present invention to provide a method for manufacturing a thin film transistor, which comprises depositing a metal having high reflectance of visible light and an alloy thereof to a thickness of several hundred nm using a thin film deposition method, And a method of manufacturing a color tile using the thin film deposition method capable of realizing various colors by using an interference phenomenon of a visible light ray by vapor deposition at a predetermined thickness.

According to an aspect of the present invention, there is provided a method of manufacturing a semiconductor device, including: forming a first electrode on a substrate; forming a first electrode on the first electrode; depositing a first electrode on the first electrode; ), Chromium (Cr), nickel (Ni), tin (Sn), copper (Cu), stainless steel and alloys thereof are deposited on a tile to a thickness of 10 to 700 nm to form a metal thin film A metal thin film deposition step; And a protective film coating step of coating a transparent paint on the metal thin film to form a protective film.

The method of manufacturing a color tile using the thin film deposition method according to another aspect of the present invention may include a method of manufacturing a color tile using aluminum (Al), silver (Ag), titanium (Ti), chromium (Cr), or the like using any one of a vacuum deposition method, a sputtering method, A metal thin film deposition step of depositing a metal thin film by depositing nickel (Ni), tin (Sn), copper (Cu), stainless steel and alloys thereof on a tile to a thickness of 10 to 300 nm; (TiO ₂ ), silicon oxide (SiO ₂ ), aluminum oxide (Al ₂ O ₃ ), zirconium oxide (ZrO ₂ ), and chromium oxide (Cr ₂ ) by any one of the reactive sputtering method and the reactive arc ion plating method. A transparent thin film deposition step of depositing any one of tin oxide (O ₃ ), tin oxide (SnO ₂ ) and zinc oxide (ZnO) to a thickness of 30 to 500 nm on the metal thin film to form a transparent thin film; And a protective film coating step of coating a transparent paint on the transparent thin film to form a protective film.

(TiN), zirconium nitride (ZrN), chromium nitride (CrN), and the like may be formed using any one of the reactive sputtering method and the reactive arc ion plating method according to another embodiment of the present invention. , Titanium carbide (TiC) on a tile at a thickness of 30 to 500 nm to form a ceramic thin film; And a protective film coating step of forming a protective film by coating a transparent paint on the ceramic thin film.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

FIGS. 1A and 1B are a schematic view (a) of a color tile fabricated by a color tile manufacturing method using the thin film deposition method according to the first embodiment of the present invention, a photograph (b) of a tile used as a base material, It is a photograph (c) of color tile of metallic color.

1A, a method of manufacturing a color tile using a thin film deposition method according to a first embodiment of the present invention includes the steps of forming an aluminum (Al), a silver (Ag), a titanium (Ti), a chromium (Cr ), Nickel (Ni), tin (Sn), copper (Cu), stainless steel, or an alloy thereof is deposited on the base material tile 110 to a thickness of 10-700 nm to form the metal thin film 120 And then a transparent paint is coated on the upper surface of the metal thin film 120 to increase the durability, thereby forming the protective film 130.

1B, a metal or an alloy thereof having a high reflectance of visible light is deposited and a transparent paint is coated on the surface of the base metal tile 110 to obtain a color tile of a metal color as shown in FIG. (10) is completed.

Here, the thin film deposition method for forming the metal thin film 120 on the base material tile 110 uses a vacuum deposition method, a sputtering method, an ion plating method, or the like. Hereinafter, a method of forming the metal thin film 120 using each thin film deposition method Will be described in more detail.

First, in the method of forming the metal thin film 120 by the vacuum vapor deposition method, aluminum (Al) and silver (Ag) having a high reflectance of visible light are irradiated to a heating source while maintaining the degree of vacuum in the vacuum chamber at 10 ^-6 to 10 ^-5 torr. , Copper (Cu), titanium (Ti), chromium (Cr), nickel (Ni), tin (Sn), molybdenum (Mo), tantalum (Ta), copper And then evaporated using electric energy, electron collision, laser heating or the like to deposit the metal thin film 120 on the base material tile 110.

In this case, depending on the material to be evaporated, a heating source may be a boat type or a coil type, and the heating source material may be tungsten (W) or molybdenum (Mo).

For example, aluminum (Al), which is a typical material with high visible light reflectance, mainly uses a tungsten coil heating source, and silver (Ag), copper (Cu), gold Lt; / RTI >

A factor of determining the type of the heating source is the vapor pressure of the material in the vacuum state. When the evaporation pressure at the melting temperature is high, a coil type heating source is used. When the evaporation pressure at the melting temperature is low, Type heating source shall be used.

In addition, the deposition rate is determined according to the kind of the material and the temperature of the heating source. In the present invention, the metal thin film 120 is deposited at a deposition rate of about 30 nm / min.

Although the deposition rate of the metal thin film 120 is not critical to the production of the metal color tile 10, if the deposition is performed at an excessively high rate, peeling between the base metal tile 110 and the metal thin film 120 may occur Lt; / RTI >

Secondly, the metal thin film 120 is formed by a sputtering apparatus composed of a vacuum chamber, a vacuum pumping apparatus, a plasma generating apparatus, a gas injecting apparatus, and a sputtering target.

More specifically, after the initial vacuum degree in the chamber is maintained at about 10 ^-6 to 10 ^-5 torr, argon (Ar), which is an inert gas, is injected through a precision gas injecting device to generate plasma in the sputter target, Is maintained at about 10 < ^-3 & gt ^; to 10 < ^{-2 &} gt ^; torr, a negative potential is applied to the sputter target by using a plasma generating power supply, and the target material is evaporated by using plasma energy A metal thin film 120 is formed on the base metal tile 110.

In this case, the negative voltage is applied in the range of -1000 to -300 V, and the vacuum degree of the chamber by the argon (Ar) gas injection is adjusted within the range of ¹ × 10 ^-3 to 2 × 10 ^-2 torr.

The material of the sputter target is the same metal as the reflective material, such as aluminum, silver, copper, titanium, chromium, nickel, tin, molybdenum Mo), tantalum (Ta), stainless steel, an aluminum-based alloy, a silver-based alloy, or the like.

The deposition rate differs depending on the applied plasma power, the degree of vacuum, and the kind of the material. In the present invention, the metal thin film 120 is formed at a deposition rate of 5 nm / min to 30 nm / min.

The process conditions for forming the metal thin film 120 using aluminum (Al) and titanium (Ti) according to the sputtering method are shown in the following table.

Metal thin film Aluminum (Al) Titanium (Ti) Initial vacuum degree 1 x 10 ^-5 torr 1 x 10 ^-5 torr Plasma power 380 V x 10 A (3.8 kW) 400 V x 12 A (5.0 kW) Target size and material 130 mm x 1200 mm, Al (99.9%), 130 mm x 1200 mm, Ti (99.7%), Working vacuum degree 2 x 10 ^-3 torr 2 x 10 ^-3 torr Coating layer thickness 100 to 110 nm 100 to 120 nm Deposition rate 10 nm / min 5 to 10 nm / min Inflow gas Argon (purity 99.999%)

Finally, in the ion plating method, arc ion plating is a typical method. The apparatus used in the present invention is similar to the sputtering apparatus, and an arc generating apparatus and an arc target exist instead of the sputter target.

In the method of forming the metal thin film 120 by the arc ion plating method, the initial vacuum degree is maintained at 10 ^-6 to 10 ^-5 torr, and the argon (Ar) gas is supplied through the gas injecting apparatus to 1 × 10 ^-4 to 1 × 10 ^-3 torr A negative voltage of -100 to -30 V and a current of 30 to 120 A are applied to the arc target from the arc generating power source to deposit the metal thin film 120.

At this time, the arc target material uses the same material as the deposition material. For example, an aluminum (Al) arc target should be used to deposit an aluminum (Al) thin film.

The process conditions for forming the metal thin film 120 using aluminum (Al) and titanium (Ti) according to the ion plating method are shown in the following table.

Metal thin film Aluminum (Al) Titanium (Ti) Initial vacuum degree 1 x 10 ^-5 torr 1 x 10 ^-5 torr Arc / plasma power 60V x 40A (2.4 kW) 60V x 35A (2.1 kW) Target size and material 80 mm (diameter) x 40 mm (height), Al (99.9%), 80 mm (diameter) x 40 mm (height), Ti (99.7%), Working vacuum degree 3 x 10 ^-4 torr 1.5 × 10 ^-4 torr Coating layer thickness 100 to 110 nm 100 to 120 nm Deposition rate 10 to 12 nm / min 8 to 10 nm / min

After the metal thin film 120 is formed on the base material tile 110 by the above three methods, the protection film 130 is formed to improve the environmental characteristics. Generally, the protection film 130 is made of transparent The color tiles 10 manufactured in this manner have a color of each metal constituting the metal thin film 120.

2A and 2B are a schematic (a) and a photograph (b) of a color tile manufactured by the method of manufacturing a color tile using the thin film deposition method according to the second embodiment of the present invention.

2A, a method of fabricating a color tile using a thin film deposition method according to a second embodiment of the present invention includes forming an aluminum (Al), a silver (Ag), a titanium (Ti), a chromium (Cr ), Nickel (Ni), tin (Sn), copper (Cu), stainless steel, and alloys thereof are deposited on the base material tile 210 to a thickness of 10 to 300 nm to form a metal thin film 220 , Titanium oxide (TiO ₂ ), silicon oxide (SiO ₂ ), aluminum oxide (Al ₂ O ₃ ), zirconium oxide (ZrO ₂ ), chromium oxide (Cr ₂ O ₃ ), tin oxide (SnO ₂ ) ZnO) is deposited on the metal thin film 220 to a thickness of 30 to 500 nm to form a transparent oxide thin film 240. In order to protect the thin film layer formed, a transparent paint is applied on the transparent oxide thin film 240 And a protective film 230 is formed by coating.

As described above, a metal or an alloy thereof having a high reflectance of visible light is deposited on the base material tile 210 as shown in FIG. 1B, a transparent oxide thin film 240 is formed on the top surface thereof, The color tiles 20 of various colors such as red, orange, yellow, green, blue, indigo, purple, sky blue and the like may be used as shown in FIG. 2B in addition to the metal color using the phenomenon of interference of the visible light ray by the oxide thin film 240 Is completed.

The hue of the color tile 20 can be controlled by the interference phenomenon of the visible light ray according to the thickness of the transparent oxide thin film 240 formed on the tile on which the metal thin film 220 is formed with a thickness of 30 to 500 nm, For example, if the transparent oxide thin film 240 has a thickness of 35 nm, blue color and 100 nm green can be formed.

The transparent oxide thin film 240 is formed on the metal thin film 220 by a reactive sputtering method and a reactive arc ion plating method. The transparent oxide thin film 240 is formed by using the thin film deposition method. The formation method will be described in more detail.

First, reactive sputtering is a method of introducing a reactive gas capable of causing a chemical reaction into the sputtering method as described above simultaneously with argon (Ar) gas.

For example, when a transparent oxide thin film 240 is to be formed, oxygen (O ₂ ) is injected as a reactive gas.

According to the reactive sputtering method, titanium oxide (TiO ₂ ), silicon oxide (SiO ₂ ), aluminum oxide (Al ₂ O ₃ ), zirconium oxide (ZrO ₂ ), chromium oxide (Cr ₂ O ₃ ) ₂ ), zinc oxide (ZnO), and the like can be formed.

The process conditions for forming the transparent oxide thin film 240 using titanium oxide (TiO ₂ ) according to the reactive sputtering method are shown in the following table.

Initial vacuum degree 1 x 10 ^-5 torr Plasma power 420 V × 12 A (4.8 kW) Target size and material 130 mm x 1200 mm, Ti (99.7%), Working vacuum degree 1.5 × 10 ^-3 torr Inflow gas Argon (purity 99.999%), oxygen (purity 99.999%), Gas inflow ratio Argon (85%), oxygen (15%), Coating layer thickness 100 nm, 120 nm Deposition rate 3 nm / min

Next, the reactive arc ion plating method is a method of simultaneously injecting the reactive gas into the arc ion plating method as described above.

The reactive arc ion plating method may be a reactive sputtering method in which titanium oxide (TiO ₂ ), silicon oxide (SiO ₂ ), aluminum oxide (Al ₂ O ₃ ), zirconium oxide (ZrO ₂ ), chromium oxide argon (Cr ₂ O ₃ ) , Tin oxide (SnO ₂ ), and zinc oxide (ZnO). Particularly, titanium oxide, zirconium oxide, and chromium oxide can deposit a dense thin film having a higher deposition rate than the reactive sputtering method There is an advantage that it can be formed.

The process conditions for forming the transparent oxide thin film 240 using titanium oxide (TiO ₂ ) according to the reactive arc ion plating method are shown in the following table.

Initial vacuum degree 1 x 10 ^-5 torr Plasma power 60V x 40A (2.4 kW) Target size and material 80 mm (diameter) x 40 mm (height), Ti (99.7%), Working vacuum degree 1.5 × 10 ^-4 torr Inflow gas Argon (purity 99.999%), oxygen (purity 99.999%), Gas inflow ratio Argon (50%), oxygen (50% or more) Coating layer thickness 100 to 120 nm Deposition rate 3 nm / min

After the transparent oxide thin film 240 is formed on the tile on which the metal thin film 220 is formed by the above two methods, a clear paint is coded to improve the inner environment, The transparent oxide thin film 240 has various colors depending on the visible light ray interference phenomenon depending on the thickness of the transparent oxide thin film 240.

FIGS. 3A and 3B are a schematic (a) and a photograph (b) of a color tile manufactured by the method of manufacturing a color tile using the thin film deposition method according to the third embodiment of the present invention.

3A, the method of manufacturing a color tile using the thin film deposition method according to the third embodiment of the present invention is characterized in that a yellow tin nitride (TiN), zirconium nitride (ZrN), chromium nitride (CrN) (TiC) is deposited on the base material tile 310 to a thickness of 30 to 500 nm to form a ceramic thin film 350. Then, the ceramic thin film 350 is formed on the ceramic thin film 350 to increase durability A transparent coating material is coated to form a protective film 330.

As described above, the ceramic thin film 350 having the hue unique to the base material tile 310 as shown in FIG. 1B is deposited, and the transparent paint is coated on the ceramic thin film 350. As a result, The color tile 30 is completed.

Other inherent colors for such ceramic materials are, for example, titanium nitride (TiN) yellow, titanium carbide (TiC) dark gray, and zirconium nitride (ZrN) light yellow.

Here, the thin film deposition method for forming the ceramic thin film 350 on the base material tile 310 uses a reactive sputtering method, a reactive ion plating method, or the like. Hereinafter, a method of forming the ceramic thin film 350 using each thin film deposition method Will be described in more detail.

The reactive sputtering method is a method in which a reactive gas capable of inducing a chemical reaction in the sputtering method is introduced simultaneously with argon (Ar) gas. In order to form a transparent oxide thin film, oxygen (O ₂ ) In order to form the nitride film, a high-purity nitrogen gas is injected together with an argon gas.

The nitride based thin film such as titanium nitride (TiN) or zirconium nitride (ZrN) can be formed by the reactive sputtering method. Unlike the transparent oxide based thin film, the nitride based thin film exhibits a yellow color, A yellow color tile 30 can be produced when depositing at a thickness of 30 nm or more.

For example, if the ratio of the flow rate of argon and nitrogen is 9: 1, it is pale yellow, 8: 2 is dark yellow, and 7: 3, the color of brown is displayed.

The process conditions for forming the ceramic thin film 350 using titanium nitride (TiN) according to the reactive sputtering method are shown in the following table.

Initial vacuum degree 1 x 10 ^-5 torr Plasma power 420 V × 12 A (4.8 kW) Target size and material 130 mm x 1200 mm, Ti (99.7%), Working vacuum degree 2 x 10 ^-3 torr Inflow gas Argon (purity 99.999%), oxygen (purity 99.999%), Gas inflow ratio Argon (70 to 90%), oxygen (10 to 30% or more) Coating layer thickness 30 to 150 nm Deposition rate 3 nm / min

Next, the reactive arc ion plating method is a method of simultaneously injecting a reactive gas (nitrogen) into the arc ion plating method, as described above.

Such a reactive arc ion plating method can form a thin film having a nitride-based color such as titanium nitride (TiN), zirconium nitride (ZrN), or the like as in the reactive sputtering method and has a deposition rate higher than that of the reactive sputtering And the deposition layer can form a dense thin film.

The process conditions for forming the ceramic thin film 350 using titanium nitride (TiN) according to the reactive arc ion plating method are shown in the following table.

Initial vacuum degree 1 x 10 ^-5 torr Plasma power 60V x 40A (2.4 kW) Target size and material 80 mm (diameter) x 40 mm (height), Ti (99.7%), Working vacuum degree 1.5 × 10 ^-4 torr Inflow gas Argon (purity 99.999%), oxygen (purity 99.999%), Gas inflow ratio Argon (0 to 50%), oxygen (50 to 100%), Coating layer thickness 100 nm to 120 nm Deposition rate 3 nm / min

After the ceramic thin film 350 is formed on the base material tile 310 by the above two methods, a clear paint is coated to improve the environmental resistance, and the color tile 30 manufactured by the above- It has a unique color.

As described above, in the method of manufacturing a color tile using the thin film deposition method according to the present invention, a metal having a high reflectance of visible light and an alloy thereof are deposited on a tile to a thickness of several hundred nm using a thin film deposition method, By forming the protective film by coating the transparent paint on the upper surface thereof, color tiles of various metal colors can be manufactured, and at the same time, the manufacturing cost can be reduced by reducing the material compared with the case of using the tile as a metal material.

The present invention also relates to a method for manufacturing a thin film transistor, which comprises depositing a metal having a high visible light reflectivity and an alloy thereof to a thickness of several hundred nm using a thin film deposition method to form a metal thin film, A transparent paint is coated on the upper surface to form a protective film so that the transparent thin film is coated with a transparent thin film so as to form a protective film on the surface of the transparent thin film, It is possible to manufacture a color tile having a color, and various designs can be realized in an interior and exterior of a building.

The present invention also provides a method of forming a nitride-based thin film by depositing a ceramic material having a unique hue on a tile to a thickness of several hundred nm using a thin film deposition method and coating a transparent paint on the nitride film to form a protective film, A color tile having a unique color of the tile can be manufactured.

Claims (3)

delete (Al), silver (Ag), titanium (Ti), chromium (Cr), nickel (Ni), tin (Sn), copper (Cu), and nickel (Au) are formed by any one of a vacuum deposition method, a sputtering method, A metal thin film deposition step of depositing a metal thin film by depositing stainless steel and an alloy thereof on a tile to a thickness of 10 to 300 nm; (TiO ₂ ), silicon oxide (SiO ₂ ), aluminum oxide (Al ₂ O ₃ ), zirconium oxide (ZrO ₂ ), and chromium oxide (Cr ₂ ) by any one of the reactive sputtering method and the reactive arc ion plating method. O ₃ , tin oxide (SnO ₂ ), or zinc oxide (ZnO) is deposited on the metal thin film at a thickness of 30 to 500 nm to control the interference phenomenon of the visible light depending on its thickness to form a transparent thin film A transparent thin film deposition step; And a protective film coating step of coating a transparent paint on the transparent thin film to form a protective film. delete

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