KR100792780B1 - A low voltage flexible organic thin film transistor and manufacturing method thereof - Google Patents

Abstract

 The present invention relates to a method for manufacturing an organic thin film transistor, and more particularly, to a method for manufacturing an organic thin film transistor in which a gate electrode is formed in an economical roll-to-roll manner. In the organic thin film transistor according to the present invention, a gate electrode is formed on a flexible substrate using a lamination process and an electro-polishing process, and then a gate insulating layer, an organic active layer, and a source / drain electrode are formed. Are manufactured. In the present invention, a commercially produced aluminum foil is used to form a base of the gate electrode using a roll-to-roll laminator on the flexible substrate, thereby reducing the roughness of the surface. It is characterized by performing a polishing treatment. And a method of securing a high capacitance of the gate insulating layer for driving at a low voltage.

Organic Thin Film Transistor, Organic Semiconductor, Flexible, Low Voltage Drive

Description

Low voltage driving flexible organic thin film transistor and method for manufacturing same {A LOW VOLTAGE FLEXIBLE ORGANIC THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF}

1 is a cross-sectional view schematically showing the structure of an organic thin film transistor according to an embodiment of the present invention.

(A)-(g) is sectional drawing which shows typically the manufacturing method of the organic thin-film transistor which concerns on embodiment of this invention.

3A is an atomic force microscopy (AFM) photograph of an aluminum foil surface formed by a lamination process on a flexible substrate.

FIG. 3B is an atomic force microscopy (AFM) photograph of the surface of an aluminum foil gate electrode subjected to electropolishing; FIG.

Figure 3 (c) is an atomic force microscope (atomic force microscopy, AFM) photograph of the surface of the gate insulating layer to form a polymer thin film by spin coating after anodizing the aluminum foil gate electrode subjected to electropolishing.

4 is a bent photo of an organic thin film transistor test body according to an embodiment of the present invention.

Fig. 5 is a diagram showing the relationship between the gate voltage VG, the drain current ID, and the square root of the drain current ID1 / 2 in the saturation regime of the test body according to the embodiment of the present invention.

Fig. 6 is a diagram showing a relationship between the drain voltage VD and the drain current ID of the test body according to the embodiment of the present invention.

<Description of the symbols for the main parts of the drawings>

100: flexible substrate 102: double-sided adhesive film

104: aluminum foil

105: electrolytically polished aluminum foil gate electrode

106: inorganic insulating layer 108: polymer insulating layer

110: organic active layer 112: source electrode

114: drain electrode

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the field of organic thin film transistors. In particular, a low voltage driving flexible device is formed by forming a gate electrode using a roll-to-roll lamination and an electropolishing process. It relates to a method for manufacturing an organic thin film transistor.

Recently, as a semiconductor material for thin film transistors, it is possible to replace a conventional inorganic semiconductor material requiring high temperature and high vacuum processes and complex pattern processes. The material is getting attention. However, since the performance of the organic semiconductor material is limited by lower carrier mobility compared to the inorganic semiconductor material, it is difficult to be applied to a memory device or a central processing unit (CPU) where fast switching speed is required. Therefore, organic semiconductor materials are expected to be applied to low-cost electronic products such as electronic newspapers, smart cards, RFIDs, and disposable electronic papers utilizing the aforementioned characteristics. In addition, the production cost should be lowered because the continuous process is easy even at low temperature and normal pressure.

However, the conventional technology requires not only a high voltage of 20V or more to drive an organic thin film transistor, but also a silicon wafer which does not deposit or be flexible at high temperature and high vacuum to form a gate electrode. There is a difficulty in the practical use of the transistor.

An object of the present invention is to provide a method for manufacturing an organic thin film transistor that forms a gate electrode in a roll-to-roll manner.

Another object of the present invention is to provide an organic thin film transistor including a gate electrode formed in a roll-to-roll manner.

It is still another object of the present invention to provide a method for manufacturing an organic thin film transistor capable of driving at low voltage.

Still another object of the present invention is to provide an organic thin film transistor which is driven at a low voltage.

Still another object of the present invention is to provide a method of forming a gate electrode in a roll-to-roll method on an organic thin film transistor.

Another object of the present invention is a roll-to-roll lamination process and a solution process capable of a high productivity continuous process at room temperature and pressure using an inexpensive aluminum foil, unlike conventional gate electrode formation, and industrially widely The present invention provides a method for manufacturing a flexible organic thin film transistor which can reduce production costs, make practical use, and can operate at low voltage by forming a gate electrode using an electropolishing process.

In order to achieve the above object, the organic thin film transistor according to the present invention

And a gate electrode made of a laminated metal layer.

In the present invention, the metal layer laminated to form the gate electrode is selected from titanium, tungsten, titanium, molybdenum, aluminum, gold, copper, yttrium, zinc, hafnium, zirconium, or an alloy thereof. In the practice of the present invention, the metal layer may be prepared and provided in the form of a film, a thin film, or a foil that may be provided in a form that can be easily laminated. In a preferred embodiment of the invention, the laminated metal layer is preferably in the form of a foil that can be laminated in a roll-to-roll manner, it is most preferable to use aluminum or aluminum alloy foil from the economic point of view.

In the present invention, the metal layer to be laminated may be formed into various thicknesses and laminated on a substrate as necessary, and preferably, a metal foil having a thickness of 1 to 100 μm, more preferably 10 to 80 μm, may be used.

In the present invention, the laminated metal layer forming the gate electrode is not limited in theory, but affects the surface roughness of the gate insulating layer formed thereon, and the surface roughness of the gate insulating layer is formed on the organic active layer. It is preferable that the lamination metal layer has a low surface roughness because it affects the charge mobility and the driving voltage.

In a preferred embodiment of the present invention, the lamination metal layer forming the gate electrode may be a polished lamination metal layer with improved surface roughness. In a preferred embodiment of the invention, it is preferable that the lamination metal layer uses an electropolished lamination metal layer.

The organic thin film transistor according to the present invention in one aspect,

Board;

A gate electrode made of a polished metal laminate layer;

A gate insulating layer formed on the gate electrode;

An organic active layer formed on the gate insulating layer; And

Drain and source electrodes formed on the organic active layer

It is made to include.

In the present invention, the organic thin film transistor may further include an adhesive layer between the gate electrode and the substrate so that the polished metal laminate layer constituting the gate electrode can be more easily laminated to the substrate.

In the present invention, the adhesive layer is not particularly limited as long as it can provide sufficient adhesiveness between the substrate and the metal laminate layer. In one embodiment of the invention, the adhesive layer is a double-sided adhesive polypropylene or polyethylene terephthalate film, it is preferable to use a product having a thickness of 10-30 ㎛.

In the present invention, the glass, plastic, sapphire or quartz substrate can be used, and the like, although not limited to the rigidity of the substrate, it is preferable to use a flexible plastic substrate.

In the present invention, the gate insulating layer may use an inorganic insulating layer, in order to lower the roughness of the surface of the gate insulating layer and further improve compatibility with the organic active layer 110, preferably an organic insulating layer, A polymer insulating layer can be formed.

In one embodiment of the present invention, the inorganic gate insulating layer may be an oxide film formed by oxidizing the gate electrode. Oxidation of the gate electrode may be performed using an anodic oxidation, plasma oxidation, or UV ozone oxidation. In a preferred embodiment of the present invention, the inorganic gate insulating film is preferably formed using an anodization method which is easy to apply a roll-to-roll method.

In the present invention, the inorganic gate insulating layer is a component of the laminated metal layer forming the gate electrode, for example, aluminum (Al), yttrium (Y), zinc (Zn), hafnium (Hf), zirconium (Zr) , Tantalum (Ta), titanium (Ti) and alloys thereof. In one preferred embodiment of the invention, the inorganic gate insulating layer is an aluminum material film formed by anodizing a foil made of aluminum or an aluminum alloy.

In the present invention, the organic gate insulating film that can be formed on the inorganic gate insulating layer is a vinyl polymer, styrene polymer, acrylic polymer, epoxy polymer, ester polymer, phenolic polymer, imide polymer and cyclo alkenes At least one material film selected from the group consisting of. In detail, the organic gate insulating layer may include polyethylene (PE), polypropylene (PP), polytetrafluoroethylene (PTFE), polyvinyl chloride (PVC) , Poly (vinyl alchol) (PVA), polyvinyl pyrrolidone (poly (vinyl pyrrolidone); PVP), polystyrene (PS), polyacrylate, polymethyl methacrylate (poly (methylmethacrylate); PMMA), polyacrylonitrile (PAN), polycarbonate (PC), polyethylene terephthalate (PET), parylene, polyphenylene It may be at least one material film selected from the group consisting of sulfide (poly (phenylene sulfide) (PPS), polyimide (PI), benzocyclobutene (BCB) and cyclopentene (CyPee).

In the present invention, the organic active layer may be a conventional organic active layer known in the organic thin film transistor, there is no particular limitation. In the practice of the invention, the organic active layer is polyacetylene (polyacetylene), polythiophene (polythiophene), P3HT (poly (3-hexylthiophene-2,5-diyl)), F8T2 (poly (9,9'-dioctylfluorene- co-bithiophene), PTV (poly (thienylene vinylene)), pentacene (pentacene), tetracene (tetracene), at least one selected from the group consisting of (rubrene) and α-6T (alpha-hexathienylene) It may be a material film.

In the present invention, the drain and source electrodes can be used in the electrode used in the conventional organic thin film transistor. In another embodiment of the present invention, the drain and source electrodes may be changed in the stacking order with the organic active layer.

In one aspect, the invention provides a method for forming a polished metal laminate layer for use as a gate electrode on a substrate;

Forming an insulating film on the gate electrode; and

Forming an organic active layer, a drain electrode, and a source electrode on the insulating film;

It consists of a method for manufacturing an organic thin film transistor comprising a.

In the present invention, the forming of the gate electrode may include forming the metal laminate layer and polishing the metal laminate layer.

In the practice of the present invention, the forming of the metal laminate layer may include forming an adhesive layer on the substrate; And forming a metal thin film on the adhesive layer. In one embodiment of the invention, the adhesive layer may be made by attaching the double-sided adhesive film to the substrate in a roll-to-roll manner.

In the present invention, the metal laminate layer may be formed by forming a foil in a roll-to-roll manner by processing the metal in the form of a foil. In one embodiment of the invention, the metal foil is a metal selected from the group consisting of titanium, tungsten, titanium, molybdenum, aluminum, gold, copper, yttrium, zinc, hafnium, zirconium, or alloys thereof. It can be made by processing in a foil manufacturing manner.

The present invention in one aspect, the step of forming an adhesive layer on the substrate;

Attaching an aluminum foil layer to the adhesive layer;

Polishing the aluminum foil layer to form a gate electrode;

Forming an insulating film on the gate electrode; and

Forming an organic active layer, a drain electrode, and a source electrode on the insulating film;

It consists of a method for manufacturing an organic thin film transistor comprising a.

In the present invention, the adhesive layer is formed by adhering the double-sided adhesive film with a roll-to-roll laminator. In the practice of the present invention, the double-sided adhesive film is, for example, PP or PET film having double-sided adhesiveness having a thickness of 10-30 μm.

In the present invention, the aluminum foil is formed by bonding the aluminum foil to the substrate with a roll-to-roll laminator. In the practice of the present invention, the thickness of the aluminum foil is preferably made of 1 to 100 ㎛, preferably 10 to 80 ㎛, more preferably 15 to 50 ㎛ so that the aluminum layer can be maintained even when worn. .

In the present invention, since the aluminum foil has a root mean square (RMS) roughness (Rq) of roughly about 10 nm, polishing is required in order to exhibit proper voltage driving characteristics. In general, in order for the transistor to have proper voltage driving characteristics, it is preferable that the surface of the polished aluminum foil gate electrode on which the insulating layer is formed is kept within 2.0 nm so that the RMS rougness (Rq) value of the insulating layer is maintained at 1.00 nm or less. Do.

In the present invention, the polishing of the aluminum foil is preferably electrolytic polishing. In one embodiment of the present invention, the electropolishing may use a mixed solution of perchloric acid and ethanol. In the practice of the present invention, the aluminum foil during electrolytic polishing is etched to reduce the thickness before polishing. The degree of etching by the polishing can be adjusted as needed, usually 5-10 ㎛ can be etched.

In the present invention, the insulating film may be formed of an inorganic insulating layer. In the present invention, the inorganic insulating layer may be formed by anodizing the electrolytic polishing aluminum foil. In the practice of the present invention, the anodization may be carried out using a barrier electrolyte, for example, boric acid, citric acid, ammonium titrate, or the like.

In the present invention, an organic insulating layer, preferably a polymer insulating layer, may be further formed on the inorganic insulating layer so as to lower the roughness of the surface and improve compatibility with the organic active layer. In the practice of the present invention, the polymer insulating layer is, for example, polymethylmethacrylate (PMMA), poly (α-methylstylene) (PAMS), polystyrene (PS), polypropylene (PP), polyvinylalcohol (PVA), polyvinylphenol (PVP). At least one of polyvinylchloride (PVC), polyvinylidenfluoride (PVDF), and polyethylene terephthalate (PET) may be used.

In the practice of the present invention, the polymer insulating layer may be formed using a spin-coating method of the polymer solution.

In the present invention, the polymer insulating layer and the inorganic insulating layer is preferably formed to have a capacitance of 70 nF / ㎠ or more to enable low voltage driving through a high capacitance (capacitance). In the practice of the present invention, the thickness of the gate insulating layer is preferably thin so that low voltage driving is possible through high capacitance. In the practice of the invention, the thickness of the inorganic insulating layer is preferably 10-30 nm, and the thickness of the polymer insulating layer is preferably 20-40 nm.

In a preferred embodiment of the present invention, the thickness of the inorganic insulating layer produced through anodization is generally proportional to the anodizing voltage, and the thickness of the polymer insulating layer produced through spin coating is proportional to the concentration of the polymer solution and the spin coater ( Since the spin-coater is inversely proportional to the rpm, the anodization voltage should be maintained at 10-20V, the concentration of the polymer solution at 0.5-1.0wt%, and the spin coater at 4000-6000rpm. .

In forming the organic active layer according to the present invention, the organic active layer may be selected from, for example, at least one organic low molecule such as pentacene or oligothiophene, or an organic polymer such as polythiophene. As a method of forming the organic active layer, a deposition method, a spin coating method, a casting method, an ink-jet printing method, or the like can be used. In the practice of the invention, the patterning of the organic active layer may be, for example, a lithography method, a shadow mask method, an inkjet printing method, or the like.

In the present invention, the drain electrode and the source electrode is a metal having a large work function such as gold (Au), platinum (Pt), copper (Cu), silver (Ag) or a conductive polymer such as PEDOT / PSS. It can be formed using, the thickness can be formed, for example, 50-300 nm thickness.

In the practice of the present invention, the method for forming the source electrode and the drain electrode is to form a patterned electrode using a deposition method and a shadow mask method in the case of a metal and to form a patterned electrode in the case of a conductive polymer using an inkjet printing method can do.

In one aspect, the present invention relates to the use of a metal foil, preferably aluminum or an aluminum alloy foil, used as a gate electrode of an organic thin film transistor. The aluminum or aluminum alloy foil is a polished aluminum or aluminum alloy foil having a low surface roughness to satisfy the use of the gate electrode of the thin film transistor. More preferably electropolished aluminum or aluminum alloy foils provide use as thin film transistors as gate electrodes.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a cross-sectional view schematically showing the structure of an organic thin film transistor according to an embodiment of the present invention.

The organic thin film transistor of the present invention includes a double-sided adhesive film 102, an electropolished aluminum foil gate electrode 105, a gate insulating layer having a double layer structure (inorganic insulating layer 106 + polymer insulating layer 108). ), An organic active layer 110, and a source 112 / drain 114 electrode are provided on the flexible substrate 100. The stacking order of the organic active layer 110 and the source 112 / drain 114 electrode may be changed.

2 (a)-(g) are diagrams schematically showing a method for manufacturing an organic thin film transistor according to a preferred embodiment of the present invention.

In the embodiment (test body) of the present invention, polyethylene naphthalate (PEN) was used as the substrate 100.

First, as shown in FIG. 2A, a double-faced adhesive film 102 is adhered onto a substrate 100 using a roll-to-roll laminator. The double-sided adhesive film 102 is a PET film having double-sided adhesiveness having a thickness of 10 μm. Subsequently, as shown in FIG. 2B, the aluminum foil 104 is similarly bonded with a roll-to-roll laminator to form the base 104 of the gate electrode. The aluminum foil 104 is 50 μm thick.

In order to reduce the surface roughness of the gate insulating layers 106 and 108 in the present invention, the polymer is electropolishing the aluminum foil 104 used as the base 104 of the gate electrode and spin-coated on the inorganic insulating layer 106. The insulating layer 108 was formed. In order to confirm this, (a)-(c) of FIG. 3 photographed the surface roughness three-dimensionally using atomic force microscopy (AFM) (5 μm × 5 μm). As shown in (a) of FIG. 3, the roughness of the surface of the aluminum foil 104 exhibited a considerably larger roughness of about 9.91 nm as the root mean square (RMS) roughness (Rq). 3 (b) shows that the surface roughness of the electropolished aluminum foil 105 is significantly reduced compared to the aluminum foil 104 before electropolishing (FIG. 3 (a)), and the RMS rougness (Rq). The value shows 1.66 nm. FIG. 3C is a diagram showing surface roughnesses of the final gate insulating layers 105 and 106 in which the inorganic insulating layer 106 and the polymer insulating layer 108 are formed on the electropolished aluminum foil 105. It has been found that the RMS roughness (Rq) value has a smooth surface with a rough reduction in the roughness of the aluminum foil 104 at about 0.85 nm.

In electrolytic polishing, a mixed solution of perchloric acid (60 wt%) and ethanol 1: 4 volume ratio is carried out at a temperature of 10 ° C. or below for 20 V for 10 minutes. As shown in FIG. 2C, the aluminum foil 105 after the electropolishing treatment is etched to reduce the thickness of the aluminum foil 105 before the treatment 104. In the embodiment (test body) of the present invention, it was confirmed that the thickness of about 8 μm was reduced by etching after the electropolishing treatment through an Alpha-step surface profiler.

As shown in Fig. 2D, the inorganic insulating layers 106 and Al2O3 are formed by anodizing the aluminum foil 105 which has been electropolished.

Anodic oxidation is achieved by using a barrier type electrolyte (eg boric acid, citric acid, am-monium tartrate, ammonium borate) at a concentration of 0.1-0.5M, pH 5-7, room temperature, and anodizing voltage. voltage 10-20V, current density 0.3-0.5 mA / cm 2.

The thickness of the inorganic insulating layer 106 is 10-30 nm, for example.

In the example (test body) of the present invention, an ammonium pentaborate electrolyte of 0.1 M, pH 7, and room temperature was used under anodization voltage of 20 V and current density of 0.32 mA / cm 2.

Next, in order to lower the roughness of the surfaces of the gate insulating layers 106 and 108 and to improve compatibility with the organic active layer 110, the polymer insulating layer 108 is formed as shown in FIG. .

The polymer insulating layer 108 is formed by spin-coating after preparing one of the above-described polymers and dissolving it in a solvent to prepare a polymer solution (eg, PMMA-toluene 1wt% solution). Let's do it.

The thickness of the polymer insulating layer 108 is, for example, 20-40 nm.

The thickness of the inorganic insulating layer 106 produced through anodization is generally proportional to the anodization voltage, and the thickness of the polymer insulating layer 108 produced through spin coating is proportional to the concentration of the polymer solution and is spin-coated. Since the gate insulating layers 106 and 108 need to be thin in order to operate at low voltage through high capacitance, the anodization voltage is 10-20 V, and the solution of the polymer solution is inversely proportional to the rpm of the coater. The concentration is 0.5-1.0wt%, and the spin coater's rotational speed per minute is 4000-6000rpm.

In the embodiment (test body) of the present invention, the bipolar gate insulating layers 106 and 108 were formed by spin coating anodic oxidation voltage of 20V and PAMS-toluene 1.0wt% polymer solution at 6000rpm, and the capacitance of 76.1nF / ㎠ The value is shown.

Next, as shown in FIG. 2F, the organic active layer 110 is formed.

In an embodiment (test body) of the present invention, pentacene was formed into an organic active layer 110 by organic molecular beam deposition (OMBD). During growth, the degree of vacuum was 10 ⁻⁷ torr, the deposition rate was 0.3 Å / s, the substrate temperature was 25 ° C. and patterned by using a shadow mask method.

Next, as shown in FIG. 2G, the source electrode 112 and the drain electrode 114 are formed.

The material of the source electrode 112 and the drain electrode 114 is a metal having a large work function such as gold (Au), platinum (Pt), copper (Cu), silver (Ag) or a material such as PEDOT / PSS. Conductive polymers can be used.

The thickness of the source electrode 112 and the drain electrode 114 is, for example, 50-300 nm.

In the embodiment (test body) of the present invention, the source electrode 112 and the drain electrode 114 patterned with gold (Au) by using a deposition method and a shadow mask method were formed.

However, the stacking order of the organic active layer 110 and the source 112 / drain 114 electrode may be changed.

Figure 4 shows a bent picture of the test body of the flexible organic thin film transistor according to the embodiment of the present invention, it can be seen that it can be applied to a flexible display such as an electronic newspaper, electronic paper.

Meanwhile, the transmission characteristic curve of the current is measured by using a KEITHLEY semiconductor characterization system (2400, 236 source / measure unit) with the manufactured test specimens, and the results are shown in FIGS. Calculated as

Charge mobility to get to a saturation region _{^{(saturation regime) I D 1/}} 2 and a graph of V _G as a parameter (FIG. 5) from the current type is obtained from the slope:

Where I _D is the source-drain current, μ is the charge mobility, Ci is the capacitance of the gate insulation layer, W is the channel width, L is the channel length, V _G is the gate voltage, and V _{T is} Is the threshold voltage.

Threshold voltage (threshold voltage, VT) was determined from the intersection of the I _D ^1/2 and the extension of the linear portion in the graph (Fig. 5) between the V _G and V _G axis. The threshold voltage consumes less power when the absolute value is close to zero.

The method of calculating the I _on / I _off current ratio is obtained by the ratio of the maximum current value in the on state and the minimum current value in the off state.

The method of calculating the subthreshold swing is obtained from the graph between log (I _D ) and V _G (FIG. 5) as the inverse of the slope maximum in the subthreshold regime. Smaller subthreshold swings mean faster switching speeds.

From this, the electrical characteristics of the flexible organic thin film transistor test specimens were calculated: charge mobility of 0.524 ± 0.027㎠ / Vs, threshold voltage of -2.76V, I _on / I _off current ratio of 10 ⁵ , and subthreshold swing of 0.317V / decade As shown in FIG. 5, the gate voltage V _G was forward sweeped from 0.5V to -5V while the drain voltage V _D was constant at -5V, as shown in FIG. The electrical characteristics of the reverse sweep at 0.5V at sig- nal show little hysteresis.

FIG. 6 is a graph showing output characteristics of the flexible organic thin film transistor test body according to the embodiment of the present invention, and shows the relationship between the drain voltage VD and the drain current I _D. 6, it can be seen that the electrical characteristics of the test specimen saturation of the drain current I _D occurs well in the saturation regime, and it operates normally at a low voltage of -5V or less.

Although the above embodiments have been described in detail, it should be noted that the above examples should not be construed as limiting the scope of the present invention, but merely to illustrate the invention.

According to the present invention, an organic thin film transistor having a gate electrode formed therein, which can be driven at a low voltage and can be produced in an economical production technique, is provided. In addition, according to the present invention, a method of manufacturing an organic thin film transistor which enables the formation of a gate electrode in an economical roll-to-roll manner by using a metal thin film is provided. A method of polishing the surface of the gate electrode is provided so that the surface roughness of the organic thin film transistor can be driven at a low voltage.

Claims (39)

A gate electrode comprising a laminated metal layer, And the laminated metal layer is a polished metal layer. The organic thin film transistor of claim 1, wherein the metal layer is selected from the group consisting of tantalum, tungsten, titanium, molybdenum, aluminum, gold, copper, yttrium, zinc, hafnium, zirconium, or an alloy thereof. The organic thin film transistor of claim 1, wherein the laminated metal layer is a foil of aluminum or an aluminum alloy. delete The organic thin film transistor of claim 1, wherein the polished metal layer is an electropolished metal layer. The organic thin film transistor according to claim 1 or 2, wherein the laminated metal layer is 1-100 microns thick. The organic thin film transistor according to claim 1 or 2, wherein the laminated metal layer is laminated on an adhesive layer on a substrate. Board; A gate electrode made of a polished metal laminate layer; An insulating layer formed on the gate electrode; An organic active layer formed on the insulating layer; And Drain and source electrodes formed on the organic thin film active layer Organic thin film transistor comprising a. The organic thin film transistor of claim 8, wherein the substrate is a flexible substrate. The organic thin film transistor of claim 8, wherein an adhesive layer is further formed between the substrate and the metal laminate layer. The organic thin film transistor of claim 10, wherein the adhesive layer is a double-sided adhesive film. The organic thin film transistor of claim 11, wherein the double-sided adhesive film is a PP or PET film having a thickness of 10-30 μm. The organic thin film transistor of claim 8, wherein the metal laminate layer is selected from the group consisting of tantalum, tungsten, titanium, molybdenum, aluminum, gold, copper, yttrium, zinc, hafnium, zirconium, or alloys thereof. The organic thin film transistor of claim 8, wherein the polished metal laminate layer is an electropolished metal laminate layer. 15. The organic thin film transistor of claim 14, wherein the electropolished metal laminate layer is electropolished aluminum or aluminum alloy foil. The organic thin film transistor of claim 8, wherein the polished metal laminate layer is 1-100 microns thick. The organic thin film transistor of claim 8, wherein the insulating layer comprises an inorganic insulating layer and a polymer insulating layer. The organic thin film transistor of claim 17, wherein the inorganic insulating layer is formed through anodization of a metal film. Forming a gate electrode using the polished metal laminate layer on the substrate; Forming an insulating film on the gate electrode; and Forming an organic active layer, a drain electrode, and a source electrode on the insulating film; Organic thin film transistor manufacturing method comprising a. The method of claim 19, wherein forming the gate electrode Forming a metal laminate layer; and An organic thin film transistor manufacturing method comprising the step of polishing a metal laminate layer. The method of claim 20, wherein forming the metal laminate layer is Forming an adhesive layer on the substrate; And Forming a metal thin film on the adhesive layer Organic thin film transistor manufacturing method consisting of. The method of claim 21, wherein the adhesive layer is a double-sided adhesive film layer. The method of claim 22, wherein the double-sided adhesive film is formed in a roll-to-roll manner. The method of claim 21, wherein forming the metal thin film Forming a metal thin film on the adhesive layer in a roll-to-roll manner. The metal foil of claim 24, wherein the metal thin film is made of a metal selected from the group consisting of tantalum, tungsten, titanium, molybdenum, aluminum, gold, copper, yttrium, zinc, hafnium, zirconium, or alloys thereof. Phosphorus organic thin film transistor manufacturing method. Forming an adhesive layer on the substrate; Attaching an aluminum foil layer to the adhesive layer; Polishing the aluminum foil layer to form a gate electrode; Forming an insulating film on the gate electrode; and Forming an organic active layer, a drain electrode, and a source electrode on the insulating film; Organic thin film transistor manufacturing method comprising a. 27. The method of claim 26, wherein the aluminum foil layer is electropolished. 27. The method of claim 26, wherein the insulating film is formed by sequentially forming an inorganic insulating film and a polymer insulating film. 29. The method of claim 28, wherein the inorganic insulating film is formed by anodization of polished aluminum foil. 29. The method of claim 28, wherein the polymer insulating film is formed by spin coating. Laminating and polishing the aluminum or aluminum alloy foil on a substrate to form a gate electrode for a thin film transistor. 32. The method of claim 31, wherein the foil is laminated in a roll-to-roll manner on an adhesive film formed on a substrate. 32. The method of claim 31, wherein the foil is electropolished. 34. The method of claim 33, wherein the electropolishing is performed using a mixed solution of perchloric acid and ethanol. 34. The method of claim 33, wherein the foil is etched by electropolishing. Board; A gate electrode made of polished aluminum or aluminum alloy foil; Inorganic insulating layer formed on the gate electrode A polymer insulating layer formed on the inorganic insulating layer; An organic active layer formed on the polymer insulating layer; And Drain and source electrodes formed on the organic thin film active layer Low voltage driving organic thin film transistor comprising a. The low voltage driving organic thin film transistor of claim 36, wherein the inorganic insulating layer has a thickness of 10-30 nm. The low voltage driving organic thin film transistor of claim 36, wherein the polymer insulating layer has a thickness of 20-40 nm. The low voltage driving organic thin film transistor of claim 36, wherein the polished gate electrode has a surface roughness of Rq of 2.00 nm or less.

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