KR101755239B1 - Laminate, method for anodizing isolated metal patterns and method of organic thin-film transistor circuits using same - Google Patents
Laminate, method for anodizing isolated metal patterns and method of organic thin-film transistor circuits using same Download PDFInfo
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- KR101755239B1 KR101755239B1 KR1020150131724A KR20150131724A KR101755239B1 KR 101755239 B1 KR101755239 B1 KR 101755239B1 KR 1020150131724 A KR1020150131724 A KR 1020150131724A KR 20150131724 A KR20150131724 A KR 20150131724A KR 101755239 B1 KR101755239 B1 KR 101755239B1
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- H01L51/0508—
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- H01L51/102—
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/1307—Organic Field-Effect Transistor [OFET]
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Abstract
The present invention relates to an insulating film; A conductive film on the insulating film; A substrate on the conductive film; And a plurality of metal patterns formed on the substrate; Wherein the substrate includes a plurality of via holes and a plurality of conductive buried portions filled with a conductive material in the plurality of via holes, wherein the plurality of metal patterns are electrically connected to the conductive film and the conductive buried portion Thereby providing a connected laminate. The method of anodic oxidation using the stacked body is a method in which a plurality of isolated metal patterns formed on a substrate are electrically connected through a conductive thin film electrically or partially connecting a plurality of metal patterns to a surface of the substrate opposite to the surface on which the metal pattern is formed An oxide film can be formed on the metal pattern in a simple manner at a time by temporarily oxidizing the metal by electrical connection.
Description
The present invention relates to an anodizing method and a method of manufacturing an organic thin film transistor circuit using the method, and more particularly, to an anodizing method capable of easily forming a metal oxide film on an isolated metal gate pattern, To a method of manufacturing an organic thin film transistor circuit using the method.
Anodic oxidation has been widely used since the past for the purpose of metal painting and corrosion prevention. When a metal such as aluminum, tantalum, or chromium is connected to an anode of a constant voltage and placed in an electrolyte solution, the surface of the metal is oxidized with oxygen ions to form an oxide film. Since the anodic oxidation process is performed at room temperature, it shows a possibility of a bent semiconductor process which is difficult to withstand a high temperature process. An oxide film obtained by anodizing aluminum or tantalum gate metal electrodes shows good characteristics for use as an oxide layer of a thin film transistor.
Because semiconductors are the basic units that constitute circuits, a large number of devices must be integrated in order to be used in various places, and complex metal patterns are required for this. However, in order to form a metal pattern using the anodic oxidation process, all of the metal patterns must be electrically connected, making it difficult to form a complicated pattern, and there is a problem that an isolated metal pattern that is not electrically connected can not be oxidized .
SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a method of manufacturing a semiconductor device, which comprises forming an oxide film on a plurality of isolated metal patterns formed on a substrate, So that they can be anodically oxidized at one time by electrically connecting all of them.
It is another object of the present invention to provide a method of manufacturing a thin film transistor circuit after electrically separating a conductive thin film which is temporarily electrically connected to a plurality of metal patterns after using the anodic oxidation method .
It is still another object of the present invention to fabricate a flexible organic thin film transistor using the anodic oxidation method and to apply it to various electronic products such as a computer, a mobile device, and various display devices.
According to an aspect of the present invention, there is provided an insulating film comprising: A conductive film on the insulating film; A substrate on the conductive film; And a plurality of metal patterns formed on the substrate; Wherein the substrate includes a plurality of via holes and a plurality of conductive buried portions filled with a conductive material in the plurality of via holes, wherein a part or the whole of the plurality of metal patterns is electrically connected to the conductive film and the conductive buried portion, A laminate is provided which is electrically connected by a conductive film.
The substrate may include at least one selected from the group consisting of polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polycarbonate (PC), polyimide (PI), and polydimethylsiloxane (PDMS).
Wherein the insulating film contains at least one selected from the group consisting of polyvinyl chloride, polyvinylidene chloride, polyvinylidene fluoride, polystyrene, polycarbazole, polyvinyl acetate, polycarbonate, polyetherimide, polyether sulfonate, and polybutadiene can do.
The conductive film may include at least one selected from aluminum, tantalum, and chromium.
And the substrate and the separable film may be further included between the substrate and the conductive film.
The plurality of metal patterns may include at least one selected from aluminum, tantalum, and chromium.
Wherein the conductive material is at least one selected from the group consisting of PEDOT: PSS (poly (3,4-ethylenedioxythiophene) polystyrene sulfonate), PPy (polypyrrole), PANi (polyaniline), silver nanoparticles, silver nanowires, gold nanoparticles and gold nanowires .
The substrate may have a thickness of 1 to 200 mu m.
The via hole may have a diameter of 0.5 to 200 mu m.
According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: (a) forming a plurality of via holes in a substrate; (b) filling the plurality of via holes with a conductive material to manufacture a substrate including a plurality of conductive buried portions; (c) fabricating a metal pattern / substrate including a plurality of metal patterns electrically separated from each other by forming a metal pattern on one surface of the substrate so as to be electrically connected to each of the plurality of conductive buried portions; (d) laminating a conductive film on the other surface of the substrate to produce a metal pattern / substrate / conductive film electrically connected to a part or the whole of the plurality of metal patterns through the conductive film; (e) laminating an insulating film on the conductive film to produce a metal pattern / substrate / conductive film / insulating film; And (f) connecting a positive electrode to the conductive film of the metal pattern / substrate / conductive film / insulating film and applying a voltage to form a metal oxide film on the metal pattern by an anodic oxidation method to form a metal oxide film / metal pattern / substrate / conductive film / Insulating film laminate of a metal pattern is provided.
The metal oxide film may have a thickness of 5 to 20 nm.
In the step (a), the via hole may be formed by a laser processing machine or a drilling machine.
Step (b) can fill the conductive material by inkjet printing, chemical vapor deposition, dispensing, and pipetting.
The plurality of metal patterns in step (c) may be formed by depositing a metal on the entire one surface of the substrate, and then photoetching a predetermined pattern.
In the anodization of step (f), the voltage may be applied between 5 and 20 volts.
According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising the steps of: (1) fabricating a metal oxide film / metal pattern / substrate / conductive film / insulating film laminate according to the method; (2) preparing a metal oxide film / metal pattern / substrate by removing the conductive film / insulating film from the metal oxide film / metal pattern / substrate / conductive film / insulating film laminate; (3) forming an organic semiconductor layer on the metal oxide layer; And (4) forming a source electrode and a drain electrode electrically connected to each other by the organic semiconductor layer on the metal oxide film.
The laminate further comprises a separable film between the substrate and the conductive film, and step (2) removes the conductive film / insulating film by separating the separable film from the substrate to form a metal oxide film / metal pattern / Can be a manufacturing step.
After step (2), a step of forming a self-assembled monolayer on the metal oxide film may be further included.
The source electrode and the drain electrode may be formed of a material selected from the group consisting of Au, Al, Ag, Be, Bi, Co, Cu, Cr, Hf, In, Mn, Mo, Mg, Ni, Nb, Pb, Pd, Ru, Sb, Ta, Te, Ti, V, W, Zr, and Zn.
Wherein the organic semiconductor layer is at least one selected from the group consisting of pentacene, poly (3-hexylthiophene) (P3HT), poly (3,3'-didodecylquaterthiophene), poly (3-butylthiophene) (MEH-PPV), and poly (3,4-ethylenedioxythiophene) (PEDOT), which are selected from the group consisting of 2-methoxy-5- Or more species.
The organic thin film transistor circuit may be a flexible organic thin film transistor circuit.
The flexible organic thin film transistor can operate at 1.0 to 5.0 V
The method of the present invention includes a step of temporarily removing a plurality of isolated metal patterns formed on a substrate through a conductive thin film which electrically or partially connects a plurality of metal patterns on a surface of the substrate opposite to the surface on which the metal pattern is formed An oxide film can be formed on the metal pattern by an easy method at a time by electrically connecting the metal to oxidize the metal.
Further, after using the anodic oxidation method of the present invention, a thin film transistor circuit can be manufactured after electrically separating a conductive thin film which is temporarily electrically connected to a plurality of metal patterns, and then electrically separated.
In addition, the flexible organic thin film transistor using the anodic oxidation treatment method of the present invention can be manufactured and applied to various electronic products such as a computer, a mobile device, and various display devices.
1 is a side sectional view of a laminate of the present invention.
2 is a front view and a rear view of the laminate of the present invention.
3 is a perspective view showing a laminated structure of the laminate according to the present invention partially separated
4 is a flowchart sequentially showing an anodic oxidation treatment method of the metal pattern of the present invention.
5 is a side cross-sectional view of an organic thin film transistor element included in an organic thin film transistor circuit using the anodizing method of the present invention.
6 is a schematic process diagram including the manufacture of a laminate for the anodization of an isolated aluminum pattern according to Example 1. Fig.
7 is a schematic view of the anodizing treatment included in Example 1. Fig.
8 is a graph illustrating characteristics of the organic thin film transistor circuit manufactured according to the first embodiment of the present invention.
9 is a graph illustrating characteristics of the organic thin film transistor circuit manufactured according to the first embodiment of the present invention.
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily carry out the present invention.
The invention is capable of various modifications and may have various embodiments, and particular embodiments are exemplified and will be described in detail in the detailed description. It is to be understood, however, that the invention is not to be limited to the specific embodiments, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
Also, when an element is referred to as being "formed" or "laminated" on another element, it may be directly attached or laminated to the front surface or one surface of the other element, It will be appreciated that other components may be present in the < / RTI >
The singular expressions include plural expressions unless the context clearly dictates otherwise. In the present application, the terms "comprises" or "having" and the like are used to specify that there is a feature, a number, a step, an operation, an element, a component or a combination thereof described in the specification, But do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.
Fig. 1 is a side sectional view of the laminate of the present invention, Fig. 2 is a front view and rear view of the laminate of the present invention, and Fig. 3 is a perspective view partially showing the laminate structure of the laminate of the present invention.
Hereinafter, the laminate for the anodizing treatment of the present invention will be described with reference to Figs.
The laminate of the present invention comprises an insulating film from the bottom; Conductive film; Board; And a metal pattern, wherein the substrate includes a plurality of via holes, and a plurality of conductive buried portions filled with a conductive material in the plurality of via holes, wherein the plurality of metal patterns are located on a front surface of the substrate, Film is located on the rear surface of the substrate, and a part or all of the plurality of metal patterns and the conductive film are electrically connected by a conductive buried portion filled in a via hole of the substrate.
The substrate may be made of polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polycarbonate (PC), polyimide (PI), polydimethylsiloxane (PDMS) Do not.
The insulating film may be made of polyvinyl chloride, polyvinylidene chloride, polyvinylidene fluoride, polystyrene, polycarbazole, polyvinyl acetate, polycarbonate, polyetherimide, polyether sulfonate, polybutadiene and the like.
The conductive film may use aluminum, tantalum, chromium, or the like, but the scope of the present invention is not limited thereto.
And a separable film between the substrate and the conductive film. The separable film is a constitution necessary for separating the conductive film from the substrate.
The plurality of metal patterns may be aluminum, tantalum, chromium, or the like, but the scope of the present invention is not limited thereto, and conductive metals may be all applied.
The conductive material may be PEDOT: PSS (poly (3,4-ethylenedioxythiophene) polystyrene sulfonate), PPy (polypyrrole), PANi (polyaniline), silver nanoparticles, silver nanowires, gold nanoparticles and gold nanowires.
The thickness of the substrate is preferably 1 to 200 mu m, more preferably 50 to 150 mu m.
The diameter of the via hole may be approximately equal to or slightly smaller than the thickness of the substrate, preferably 0.5 to 200 mu m, and more preferably 30 to 150 mu m.
4 is a flowchart sequentially showing an anodic oxidation treatment method of the metal pattern of the present invention. Hereinafter, a method of anodizing the metal pattern of the present invention of the present invention will be described with reference to FIG.
First, a plurality of via holes are formed in the substrate (step a).
Since the substrate is the same as that described in the above-described laminate, the detailed contents will be referred to.
The via hole is formed by a laser processing machine or a drill mechanism, and the number of the via holes, the formation interval, and the like can be determined according to the metal pattern to be manufactured, the shape and the interval. The diameter of the via hole is preferably about the same as or slightly smaller than the thickness of the substrate.
In addition, the substrate on which the via hole is formed can be surface-modified by oxygen (O 2 ) plasma treatment. Thus, the interfacial bonding force of the substrate can be improved.
Next, a plurality of via holes are filled with a conductive material to prepare a substrate including a plurality of conductive buried portions (step b).
The filling of the conductive material may be performed by a method such as inkjet printing, chemical vapor deposition, dispensing, pipetting, or the like.
Thereafter, a plurality of metal patterns are formed on one surface of the substrate so as to be electrically connected to each of the plurality of conductive buried portions, thereby fabricating a metal pattern / substrate including a plurality of electrically isolated metal patterns c).
The plurality of metal patterns may be formed by depositing a metal on the entire surface of the substrate, and then photoetching a predetermined pattern.
Next, a conductive film is laminated on the other surface of the substrate to produce a metal pattern / substrate / conductive film electrically connected to a part or the whole of the plurality of metal patterns through the conductive buried portion (step d) .
The lamination of the conductive film may be performed by a method of depositing a conductive metal, or a method of preparing a conductive film in advance and then attaching the conductive film. However, the scope of the present invention is not limited thereto, The film can be laminated.
Thereafter, an insulating film is laminated on the conductive film to produce a metal pattern / substrate / conductive film / insulating film (step e).
The insulating film may be formed by previously attaching an insulating material in the form of a film to the conductive film, or an insulating material may be deposited on the conductive film to form an insulating film.
Finally, a cathode is connected to the conductive film of the metal pattern / substrate / conductive film / insulating film, and a voltage is applied to form a metal oxide film on the metal pattern by an anodic oxidation method to form a metal oxide film / metal pattern / substrate / conductive film / To prepare an insulating film laminate (step f).
The thickness of the metal oxide film is preferably 5 to 20 nm.
The anodic oxidation method can be performed according to a known method, which is a known technique, and a detailed description thereof will be omitted.
As the negative electrode of the power source voltage, any metal having a lower ionization tendency than the metal included in the metal pattern can be used, but it is more preferable to use platinum with a very low ionization tendency.
The electrolyte may be citric acid, sulfuric acid, or the like.
5 is a side cross-sectional view of an organic thin film transistor element included in an organic thin film transistor circuit using the anodizing method of the present invention. A method of manufacturing the organic thin film transistor circuit of the present invention will be described with reference to FIG.
First, a metal oxide film / metal pattern / substrate / conductive film / insulating film laminate is manufactured according to the above-described anodizing method of the present invention (step 1).
As described above, in some cases, the laminate may further include a separable film such as a silicone tape between the substrate and the conductive film.
Next, a metal oxide film / metal pattern / substrate is prepared by removing the conductive film / insulating film from the metal oxide film / metal pattern / substrate / conductive film / insulating film laminate (step 2).
At this time, in the case where the metal oxide film / metal pattern / substrate / separable film / conductive film / insulating film laminate, which further comprises a separable film between the substrate and the conductive film in step 1, By separating from the substrate, the conductive film / insulating film can be easily separated together.
After step (2), a self-assembled monolayer may be formed on the metal oxide film / metal pattern / substrate metal oxide film, if necessary. As the self-assembled monolayer is formed, the morphology of the organic semiconductor layer to be formed thereon may be controlled to improve the charge mobility.
Thereafter, an organic semiconductor layer is formed on the metal oxide layer (step 3).
The organic semiconductor layer may be at least one selected from the group consisting of pentacene, poly (3-hexylthiophene) (P3HT), poly (3,3''-didodecylquaterthiophene), poly (MEH-PPV), poly (3,4-ethylenedioxythiophene) (PEDOT), and the like However, the scope of the present invention is not limited thereto, and any known organic semiconductor material which can be used as an active layer of an organic thin film transistor can be applied.
Next, a source electrode and a drain electrode electrically connected to each other by the organic semiconductor layer are formed on the metal oxide layer (step 4).
The source electrode and the drain electrode may be formed of one selected from the group consisting of Au, Al, Ag, Be, Bi, Co, Cu, Cr, Hf, In, Mn, Mo, Mg, Ni, Nb, Pb, Pd, Pt, Rh, , Ta, Te, Ti, V, W, Zr, Zn and the like.
The organic thin film transistor circuit manufactured according to such a manufacturing method may be a flexible organic thin film transistor circuit having a flexible property. Flexible organic thin film transistor circuits can be applied to various electronic products requiring flexible properties.
The flexible organic thin film transistor can operate at a low voltage of 1.0 to 5.0V.
[Example]
Hereinafter, preferred embodiments of the present invention will be described. However, this is for illustrative purposes only, and thus the scope of the present invention is not limited thereto.
Example 1: Anodic oxidation of isolated aluminum pattern
6 is a schematic process diagram including the manufacture of a laminate for the anodic oxidation of an isolated aluminum pattern according to Example 1, and Fig. 7 is a schematic view of the anodizing treatment included in Example 1. Fig. The first embodiment will be described with reference to Figs. 6 and 7. Fig.
The substrate was laminated in a two-layered structure, and a silicone tape having a thickness of 20 탆 was adhered to the back surface of a 125 탆 thick PET substrate (a). Then, a hole was formed at a position where a gate pattern would be formed by a short-pulse laser, and the diameter of the hole was formed to be approximately equal to or slightly smaller than the thickness of the substrate (b). A plurality of conductive buried portions corresponding to the holes were formed by filling a PEDOT: PSS solution, which is a high electrically conductive material, in the holes by inkjet printing. (C) Aluminum was deposited to form an isolated aluminum gate pattern to be electrically connected to each of the conductive buried portions. Next, aluminum is deposited on the back surface of the substrate on which the silicon tape is adhered to form an aluminum thin film so as to be electrically connected to all gate patterns through the holes (e). Thereafter, a silicon material tape was stuck on the aluminum thin film to produce a laminate.
Thereafter, the aluminum pattern of the laminate was anodized. Specifically, a positive electrode of a voltage power source was connected to the aluminum thin film portion at the edge, and a platinum electrode was used as a negative electrode of the power source voltage. The laminate connected to the anode and the platinum electrode connected to the cathode were placed in a neutralized citric acid electrolyte at pH 7, and a voltage of 10 V was applied thereto. After 10 minutes, the laminate having the aluminum oxide film formed on the aluminum pattern was washed with clean water I got it. At this time, an aluminum oxide film was formed with a thickness of about 10 nm in the aluminum pattern.
Device Example 1: Fabrication of thin film transistor circuit
A laminate having an aluminum oxide film formed on the aluminum pattern produced according to Example 1 was prepared. The aluminum tape and the insulating film were removed together by separating the silicon tape from the laminate having the aluminum oxide film formed thereon.
Next, an aluminum oxide film formed on a plurality of aluminum patterns is subjected to an ODTS (octadecyltrichlorosilane) SAM (Self-Aligned Monolayer) surface treatment to form a poly (3-hexyl) thiophene organic semiconductor layer, A source electrode and a drain electrode were formed to fabricate an organic thin film transistor circuit driven at a voltage of 1.5V.
[Test Example]
Test Example One:
FIGS. 8 and 9 are graphs showing characteristics of the organic thin film transistor circuit manufactured according to the first embodiment of the present invention.
Referring to FIGS. 8 and 9, when a voltage of 1.5 V is applied to the semiconductor terminal, it can be seen that it operates with a driving current of 5 × 10 -5 A and a threshold voltage of about -0.4 V, ) Characteristics can be observed.
The scope of the present invention is defined by the appended claims rather than the detailed description and all changes or modifications derived from the meaning and scope of the claims and their equivalents are to be construed as being included within the scope of the present invention do.
Claims (20)
A conductive film on the insulating film;
A substrate on the conductive film; And
A plurality of metal patterns formed on the substrate; / RTI >
Wherein the substrate includes a plurality of via holes and a plurality of conductive buried portions filled with a conductive material in the plurality of via holes,
Wherein the conductive material is one selected from among PEDOT: PSS (poly (3,4-ethylenedioxythiophene) polystyrene sulfonate), PPy (polypyrrole), PANi (Polyaniline), silver nanoparticles, silver nanowires, gold nanoparticles, and gold nanowires ≪ / RTI >
And a part or all of the plurality of metal patterns are electrically connected by the conductive film and the conductive buried portion.
Characterized in that the substrate comprises at least one selected from the group consisting of polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polycarbonate (PC), polyimide (PI), and polydimethylsiloxane (PDMS) .
Wherein the insulating film contains at least one selected from polyvinyl chloride, polyvinylidene chloride, polyvinylidene fluoride, polystyrene, polycarbazole, polyvinyl acetate, polycarbonate, polyetherimide, polyether sulfonate, and polybutadiene .
Wherein the conductive film comprises at least one selected from the group consisting of aluminum, tantalum, and chromium.
And a separable film between the substrate and the conductive film.
Wherein the plurality of metal patterns comprise at least one selected from the group consisting of aluminum, tantalum, and chromium.
Wherein the substrate has a thickness of 1 to 200 mu m.
Wherein the via hole has a diameter of 0.5 to 200 占 퐉.
(b) filling the plurality of via holes with a conductive material to manufacture a substrate including a plurality of conductive buried portions;
(c) fabricating a metal pattern / substrate including a plurality of metal patterns electrically separated from each other by forming a metal pattern on one surface of the substrate so as to be electrically connected to each of the plurality of conductive buried portions;
(d) laminating a conductive film on the other surface of the substrate to produce a metal pattern / substrate / conductive film electrically connected to a part or the whole of the plurality of metal patterns through the conductive film;
(e) laminating an insulating film on the conductive film to produce a metal pattern / substrate / conductive film / insulating film; And
(f) connecting a positive electrode to the conductive film of the metal pattern / substrate / conductive film / insulating film and applying a voltage to form a metal oxide film on the metal pattern by an anodic oxidation method to form a metal oxide film / metal pattern / substrate / conductive film / Preparing an insulating film laminate;
Wherein the metal pattern is anodized.
Wherein the metal oxide film has a thickness of 5 to 20 nm.
Wherein the via hole is formed by a laser processing machine or a drill mechanism in step (a).
Wherein the step (b) comprises filling the conductive material by any one method selected from ink jet printing, chemical vapor deposition, dispensing, and pipetting.
Wherein the plurality of metal patterns in step (c) are formed by depositing a metal on the entire one surface of the substrate, and then forming a predetermined pattern by photoetching.
Wherein the voltage is applied at 5 to 20 V in the anodic oxidation of step (f).
(2) preparing a metal oxide film / metal pattern / substrate by removing the conductive film / insulating film from the metal oxide film / metal pattern / substrate / conductive film / insulating film laminate;
(3) forming an organic semiconductor layer on the metal oxide layer; And
(4) forming a source electrode and a drain electrode electrically connected to each other by the organic semiconductor layer on the metal oxide film;
Wherein the organic thin film transistor circuit is formed on the substrate.
The laminate further comprises a separable film between the substrate and the conductive film, and step (2) removes the conductive film / insulating film by separating the separable film from the substrate to form a metal oxide film / metal pattern / Wherein the step of fabricating the organic thin film transistor circuit comprises the steps of:
Further comprising, after step (2), forming a self-assembled monolayer on the metal oxide layer.
Wherein the organic thin film transistor circuit is a flexible organic thin film transistor circuit.
Wherein the flexible organic thin film transistor operates at 1.0 to 5.0V.
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|---|---|---|---|---|
| KR20200006791A (en) * | 2018-07-11 | 2020-01-21 | 울산과학기술원 | Hetero junction tandem solar cell and manufacturing method |
| KR20220145498A (en) | 2021-04-22 | 2022-10-31 | 주식회사 디에이피 | Laser via hole processing apparatus and method using the same |
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| KR960011127A (en) | 1994-09-13 | 1996-04-20 | 우산춘 | Sea water continued natural drop |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR20200006791A (en) * | 2018-07-11 | 2020-01-21 | 울산과학기술원 | Hetero junction tandem solar cell and manufacturing method |
| KR102100105B1 (en) * | 2018-07-11 | 2020-04-13 | 울산과학기술원 | Hetero junction tandem solar cell and manufacturing method |
| KR20220145498A (en) | 2021-04-22 | 2022-10-31 | 주식회사 디에이피 | Laser via hole processing apparatus and method using the same |
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