JP5396734B2 - Organic semiconductor device, organic semiconductor device manufacturing method, and display device - Google Patents

Description

  The present invention relates to an organic semiconductor element using an organic transistor, a manufacturing method thereof, and the like.

  In recent years, semiconductor transistors typified by TFTs tend to expand their applications with the development of display devices. Such a semiconductor transistor functions as a switching element when electrodes are connected via a semiconductor material.

Conventionally, as a semiconductor material used for the semiconductor transistor, an inorganic semiconductor material such as silicon (Si), gallium arsenide (GaAs), or indium gallium arsenide (InGaAs) has been used. A semiconductor transistor using such an inorganic semiconductor material is also used for a display TFT array substrate of a display element.
On the other hand, as the semiconductor material, an organic semiconductor material made of an organic compound is also known. Such an organic semiconductor material has an advantage that it can be enlarged at a lower cost than the inorganic semiconductor material, can be formed on a flexible plastic substrate, and is stable against mechanical impact. Researches assuming application to display devices such as flexible displays typified by electronic paper have been actively conducted.

  Here, as illustrated in FIG. 7, in a semiconductor element 100 using a conventional organic semiconductor material, an organic transistor 102 using an organic semiconductor material is formed on an arbitrary substrate 101. In general, the display electrode 103 is formed on the surface on which the organic transistor is formed.

  By the way, in recent display devices, technological development represented by the adoption of an active matrix driving system for displaying higher-density image data and improving moving image display quality has been advanced. For this reason, a semiconductor element used in the display device is also required to have a higher aperture ratio and transistors arranged with high density and high accuracy. For this reason, the conventional semiconductor device having the structure illustrated in FIG. 7 has been problematic in that it is no longer possible to meet such requirements.

In this regard, Patent Document 1 discloses that a substrate, an organic transistor formed on the substrate, an insulating layer formed to cover the organic transistor, and the organic transistor on the insulating layer are energized. A semiconductor device having a formed display electrode is disclosed. The semiconductor element having such a structure has an advantage that a semiconductor element having a higher aperture ratio can be manufactured because the organic transistor and the display electrode are formed on different planes. ing.
However, various problems have been pointed out in the semiconductor element having such a structure. First, since a new configuration called an insulating layer has to be adopted, there is a problem that the manufacturing process becomes complicated. In addition, it is essential that the insulating layer is formed so as to cover the organic transistor. However, since the organic semiconductor material used in the organic transistor is easily eroded by an organic solvent or the like, the insulating layer is formed. At this time, the organic transistor is damaged, and there is a problem that the performance of the manufactured semiconductor element is significantly lowered. Further, in the semiconductor element having the above structure, the display electrode is formed on the insulating layer, but the presence of the organic transistor and the through-hole formed in the insulating layer in order to energize the display electrode and the organic transistor Due to the presence or the like, irregularities are formed on the surface of the insulating layer, which makes it difficult to form a display electrode having a flat surface.

JP 2004-281623 A

  The present invention has been made in view of such problems, and is an organic semiconductor element in which an organic transistor is used. The organic semiconductor element can be manufactured by a simple process and has high definition when used in a display device. An object of the present invention is to provide an organic semiconductor element capable of displaying an image with excellent quality.

  In order to solve the above problems, the present invention comprises an insulating film made of an insulating material and having a through hole, an organic transistor formed on the insulating film, and the organic transistor of the insulating film. A display electrode formed on a surface opposite to the opposite surface, wherein the display electrode and the organic transistor are connected so as to be energized through a through hole of the insulating film. An organic semiconductor device is provided.

According to the organic semiconductor element of the present invention, the organic transistor and the display electrode are formed on the surfaces of the insulating film opposite to each other, thereby adopting a new configuration such as an insulating layer separately. The organic transistor and the display electrode can be formed on different surfaces with a simpler configuration. Therefore, according to the present invention, an organic semiconductor element having a high aperture ratio can be manufactured with a simple configuration.
In addition, according to the present invention, since it is not necessary to form an insulating layer or the like on the organic transistor, it is less likely that the characteristics of the organic transistor are deteriorated in the manufacturing process. Further, since the insulating film is present between the organic transistor and the display electrode, even if the organic transistor and the display electrode are formed at a higher density than before in order to increase the aperture ratio, both of them are short-circuited. This can be physically prevented. Therefore, according to the present invention, an organic semiconductor element having a higher aperture ratio and more excellent transistor characteristics can be obtained.
Furthermore, according to the present invention, since the display electrode is formed on the surface of a flat insulating film without unevenness, the surface of the display electrode can be made flat without unevenness. Therefore, according to the present invention, an organic semiconductor element capable of achieving excellent display quality when used in a display device can be obtained.
Thus, according to the present invention, an organic semiconductor element using an organic transistor, which can be manufactured by a simple process, and has a high-definition image with excellent quality when used in a display device. An organic semiconductor element that can be displayed can be provided.

  In the organic semiconductor element of the present invention, the position where the organic transistor is formed on the insulating film and the position where the display electrode is formed on the insulating film are the thickness of the insulating film. It is preferable to overlap in the direction. This is because the aperture ratio of the organic semiconductor element of the present invention can be further improved.

  Moreover, this invention uses the board | substrate for organic semiconductor elements which has the insulating film which consists of an insulating material, and the electrode layer formed on the said insulating film, The said insulating film side of the said board | substrate for organic semiconductor elements An insulating film penetrating step for forming a through hole in the insulating film, and a through hole formed in the insulating film so as to penetrate the through hole and conductively connect to the electrode layer. An energization part forming step of forming an energization part made of a conductive material, and an organic transistor formation process of forming an organic transistor on the insulating film of the substrate for an organic semiconductor element and connected to the energization part And providing a method for producing an organic semiconductor element.

According to the method for producing an organic semiconductor element of the present invention, in the organic transistor formation step, the organic transistor and the electrode layer are formed by forming an organic transistor on the insulating film of the organic semiconductor element substrate. The insulating film is formed on the opposite surfaces. Therefore, according to the present invention, an organic semiconductor element having a high aperture ratio can be manufactured by a simple process without forming a new structure such as an insulating layer.
According to the present invention, the organic transistor and the display electrode are formed on the opposite surfaces of the insulating film, so that the organic transistor has a higher density than the conventional one in order to increase the aperture ratio. Even if the display electrode is formed, it is possible to physically prevent the organic transistor and the display electrode from being short-circuited during the manufacturing process. Therefore, according to the present invention, an organic semiconductor element having a higher aperture ratio and more excellent transistor characteristics can be obtained.
Furthermore, according to this invention, the surface of an electrode can be made flat without an unevenness | corrugation by using the board | substrate for organic-semiconductor elements which has the structure by which the insulating film and the electrode layer were laminated | stacked previously. For this reason, according to the present invention, when used in a display device, an organic semiconductor element capable of achieving excellent display quality can be manufactured.
Thus, according to the present invention, an organic semiconductor element using an organic transistor, which can display a high-definition image with excellent quality when used in a display device. Can be manufactured by a simple process.

  Furthermore, the present invention provides a display device using the organic semiconductor element according to the present invention. The display device of the present invention can display a high-definition image with excellent quality by using the organic semiconductor element according to the present invention.

  The organic semiconductor element of the present invention can be manufactured by a simple process, and when used in a display device, has an effect that a high-definition image can be displayed with excellent quality. Moreover, the manufacturing method of the organic-semiconductor element of this invention has an effect that such an organic-semiconductor element can be manufactured in a simple process.

  The present invention relates to an organic semiconductor element, a method for manufacturing an organic semiconductor element, and an invention of a display device. Hereinafter, these inventions will be described in order.

A. Organic Semiconductor Element First, the organic semiconductor element of the present invention will be described. As described above, the organic semiconductor element of the present invention is made of an insulating material, formed of an insulating film having a through hole, an organic transistor formed on the insulating film, and the organic transistor of the insulating film. A display electrode formed on a surface opposite to the formed surface, wherein the display electrode and the organic transistor are connected to be energized through a through hole of the insulating film. It is what.

Such an organic semiconductor element of the present invention will be described with reference to the drawings. FIG. 1 is a schematic sectional view showing an example of the organic semiconductor element of the present invention. As illustrated in FIG. 1, an organic semiconductor element 10 of the present invention has an insulating film 1 made of an insulating material, an organic transistor 2 and a display electrode 3 formed on the insulating film 1.
In such an example, the organic semiconductor element 10 of the present invention includes the organic transistor 2 and the display electrode 3 formed on opposite surfaces of the insulating film 1, and the organic transistor 2. The display electrode 3 is connected so as to be energized through a through-hole formed in the insulating film 1.
In FIG. 1, the organic transistor 2 and the display electrode 3 are connected through a current-carrying portion 5 formed in one through hole of the insulating film.

According to the organic semiconductor element of the present invention, the organic transistor and the display electrode are formed on the surfaces of the insulating film opposite to each other, thereby adopting a new configuration such as an insulating layer separately. The organic transistor and the display electrode can be formed on different surfaces with a simpler configuration. Therefore, according to the present invention, an organic semiconductor element having a high aperture ratio can be manufactured with a simple configuration.
In addition, according to the present invention, since it is not necessary to form an insulating layer or the like on the organic transistor, it is less likely that the characteristics of the organic transistor are deteriorated in the manufacturing process. Further, since the insulating film is present between the organic transistor and the display electrode, even if the organic transistor and the display electrode are formed at a higher density than before in order to increase the aperture ratio, both of them are short-circuited. This can be physically prevented. Therefore, according to the present invention, an organic semiconductor element having a higher aperture ratio and more excellent transistor characteristics can be obtained.
Furthermore, according to the present invention, since the display electrode is formed on the surface of a flat insulating film without unevenness, the surface of the display electrode can be made flat without unevenness. Therefore, according to the present invention, an organic semiconductor element capable of achieving excellent display quality when used in a display device can be obtained.
Thus, according to the present invention, an organic semiconductor element using an organic transistor, which can be manufactured by a simple process, and has a high-definition image with excellent quality when used in a display device. An organic semiconductor element that can be displayed can be provided.

The organic semiconductor element of the present invention has at least an insulating film, an organic transistor, and a display electrode, and may have any other configuration as necessary.
Hereafter, each structure used for this invention is demonstrated in order.

1. Insulating film First, the insulating film used in the present invention will be described. The insulating film used for this invention consists of an insulating material, and the through-hole which can be connected so that it may energize the organic transistor and display electrode which are mentioned later is formed.
Hereinafter, such an insulating film will be described.

The insulating film used for this invention consists of an insulating material which has insulation, and will not be specifically limited if desired insulation is shown.
Here, the insulating film used in the present invention means a film having a form, and a film formed as a film having no self-supporting property is made of an insulating material. Even if it exists, it shall not correspond to the insulating film in this invention. For this reason, both surfaces of the insulating film used in the present invention are flat, and the organic transistor and the display electrode described later are formed on the flat surface.

The insulating film used in the present invention is not particularly limited as long as it has an insulation property that can prevent a short circuit between an organic transistor and a display electrode, which will be described later, in a portion other than the through hole. Among them, the insulating film used in the present invention has a volume resistivity of preferably 10 ¹⁰ Ω · cm or more, and more preferably 10 ¹⁴ Ω · cm or more. Here, the volume resistivity can be measured by a four-probe method, a four-terminal method, a double ring electrode method, or the like.

  Further, the insulating material constituting the insulating film is not particularly limited as long as the insulating film having the desired insulating properties as described above can be obtained. Examples of such insulating materials include polyimide, polyethylene naphthalate, polyethylene terephthalate, polyethersulfone, polycarbonate, polyetherimide, polyetheretherketone, polyetherketone, polyphenylene sulfide, liquid crystal polymer, epoxy resin, and silicone. Examples thereof include resins and finol resins. In the present invention, any of these insulating materials can be suitably used. In particular, in the present invention, polyimide, polyethylene naphthalate, polyethylene terephthalate, polyethersulfone, and polyetherimide are used as the insulating material in consideration of heat resistance, impact resistance, dimensional stability, surface smoothness, and the like. It is preferable.

  In addition, the insulating material used for this invention may be only one type, or may be two or more types.

  The thickness of the insulating film used in the present invention is within a range in which a desired insulating property can be imparted to the insulating film according to the type of the insulating material and the like and through holes can be formed. If it is, it will not specifically limit. In other words, the thickness of the insulating film can be appropriately determined so as to have a desired insulating property within a range in which a through hole can be formed. Among these, the thickness of the insulating film used in the present invention is preferably in the range of 10 μm to 200 μm, preferably 15 μm to 150 μm, from the viewpoint that both the insulating properties of the film and the flexibility of the film can be achieved. More preferably, it is in the range, more preferably in the range of 25 μm to 100 μm.

  Moreover, as a structure of the insulating film used for this invention, the structure which consists of a single layer comprised with an insulating material may be sufficient, or the structure by which the several layer was laminated | stacked may be sufficient. Here, in the case where the insulating film used in the present invention has a configuration in which a plurality of layers are laminated, only the outermost layer is made of an insulating material, so that a desired insulating property is imparted. There may be.

  The insulating film used in the present invention is formed with a through hole that can be connected so that an organic transistor and a display electrode, which will be described later, are energized, but as an aspect in which the through hole is formed Is not particularly limited as long as the organic transistor and the display electrode can be connected so as to be energized through the through hole. Especially in this invention, it is preferable that a through-hole is normally formed in parallel with the thickness direction of an insulating film.

  In addition, the opening shape of the through-hole when the surface of the insulating film is viewed is the use of the organic semiconductor element of the present invention, the structure of the organic transistor formed on the insulating film, and further, the organic transistor is insulative. It can be appropriately determined according to the mode of arrangement on the film, and is not particularly limited. Accordingly, the opening shape may be any of a circular shape, an elliptical shape, a polygonal shape, a rectangular shape, and the like. Moreover, the said opening shape may be the same in the front and back of an insulating film, and may differ.

  When the opening shape is circular, the diameter of the through hole is not particularly limited as long as it is within a range in which the organic transistor and the display electrode can be connected to each other through the through hole. In particular, in the present invention, it is preferably in the range of 10 μm to 500 μm, more preferably in the range of 30 μm to 100 μm, and further preferably in the range of 50 μm to 80 μm. This is because if the diameter of the through hole is larger than the above range, the aperture ratio of the organic semiconductor element of the present invention may not be increased to a desired level. Moreover, if the diameter is smaller than the above range, it may be substantially difficult to form a through hole in the insulating film in the process of manufacturing the organic semiconductor element of the present invention.

  However, the size of the through hole depends on the thickness of the insulating film. More specifically, the size of the through-hole that can be formed in the insulating film is substantially the same as the thickness of the insulating film, so the smaller the thickness of the insulating film, The size can be reduced, and the size of the through-hole that can be formed can be increased as the thickness increases.

2. Display electrode Next, the display electrode used for this invention is demonstrated. The display electrode used in the present invention is formed on the above-described insulating film and on the surface opposite to the surface on which the organic transistor described later is formed. Moreover, the display electrode used for this invention is formed so that it may energize with the organic transistor mentioned later through the through-hole with which the said insulating film is provided.
Hereinafter, such display electrodes will be described.

  The display electrode used in the present invention is not particularly limited as long as it is made of a conductive material. Depending on the use of the organic semiconductor element of the present invention, a transparent conductive material and an opaque conductive material are used. Any display electrode made of any material can be used.

  The conductive material used for the display electrode is not particularly limited as long as a display electrode having desired conductivity can be formed. Examples of such a conductive material include metal materials such as gold, copper, silver, aluminum, chromium, nickel, and tin, conductive polymer materials such as polyaniline and polyethylenedioxythiophene, and oxides such as ITO and IZO. Can be mentioned. In the present invention, any of these conductive materials can be suitably used, but in particular, when gold, silver, copper, aluminum, polyaniline, and polyethylenedioxythiophene are formed on a film substrate. However, it is preferable because breakage such as cracks and breakage is unlikely to occur.

  The display electrode used in the present invention is usually formed in a pattern corresponding to an organic transistor described later. Here, the pattern in which the display electrode is formed and the shape and size of each display electrode are not particularly limited, and can be appropriately determined according to the use of the organic semiconductor element of the present invention. .

  Further, the thickness of the display electrode used in the present invention is not particularly limited as long as it is within a range in which desired conductivity can be imparted to the display electrode according to the kind of the conductive material. However, as a method for producing the organic semiconductor element of the present invention, an insulating material is used as a method for forming a through-hole in the insulating film, as will be described later in the section “B. Method for producing an organic semiconductor element”. Using a substrate for an organic semiconductor element having an insulating film and a display electrode formed on the insulating film, a through-hole is formed in the insulating film from the insulating film side of the organic semiconductor element substrate In the case of using this method, if the thickness of the display electrode is too thin, the through-hole may be formed in the display electrode when the through-hole is formed in the insulating film. Considering this, the thickness of the display electrode used in the present invention is preferably in the range of 100 nm to 100 μm, more preferably in the range of 100 nm to 50 μm, and in the range of 100 nm to 10 μm. More preferably it is.

Furthermore, the display electrode in the present invention preferably has a surface with a flat surface. Thereby, in the display device using the organic semiconductor element of the present invention, it is possible to suppress a decrease in display quality due to the unevenness of the surface of the display electrode.
In addition, since the display electrode in the present invention is formed on an insulating film having a flat surface, there is an advantage that a display electrode having a flat surface can be easily formed without using a special technique. Have.

3. Next, the organic transistor used in the present invention will be described. The organic transistor used in the present invention is formed on the surface of the insulating film opposite to the surface on which the display electrode is formed. Moreover, the organic transistor used for this invention is formed so that it may energize with the said display electrode through the through-hole with which the said insulating film is provided.
Hereinafter, such an organic transistor will be described in detail.

  The organic transistor used in the present invention is not particularly limited as long as an organic semiconductor layer made of an organic semiconductor material is used and functions as a transistor. As such an organic transistor, one composed of at least an organic semiconductor layer made of an organic semiconductor material, a gate electrode, a gate insulating layer, a source electrode and a drain electrode is usually used. Moreover, in this invention, it forms so that either one of the said drain electrode or the said source electrode may be connected with a display electrode through the through-hole of an insulating film.

  The organic transistor used in the present invention will be described with reference to the drawings. FIG. 2 is a schematic cross-sectional view showing an example of an organic transistor used in the present invention. As illustrated in FIG. 2A, the organic transistor 2 used in the present invention includes a gate electrode 2a formed on the insulating film 1 and a gate insulating layer 2b formed so as to cover the gate electrode 2a. A source electrode 2c and a drain electrode 2d formed on the gate insulating layer 2b so as to form a channel region, and an organic semiconductor layer 2e formed on the channel region and made of an organic semiconductor material. There may be. In such an example, the organic transistor 2 and the display electrode 3 are energized by connecting the drain electrode 2d and the display electrode 3 to the energizing portion 5 formed in the through hole of the insulating film 1. It is in a state.

  Further, as illustrated in FIG. 2B, the organic transistor 2 used in the present invention is formed on the insulating film 1 and includes an organic semiconductor layer 2e made of an organic semiconductor material and the organic semiconductor layer 2e. A source electrode 2c and a drain electrode 2d formed so as to constitute a channel region, a gate insulating layer 2b formed on the channel region, and a gate electrode 2a formed on the gate insulating layer 2b It may be. Even in such an example, the organic transistor 2 and the display electrode 3 are connected by the drain electrode 2d and the display electrode 3 being connected to the energizing portion 5 formed in the through hole of the insulating film 1. The power is on.

  Here, the organic transistor illustrated in FIG. 2A has a bottom-gate structure, and the organic transistor illustrated in FIG. 2B has a top-gate structure. The structure of the organic transistor used in is not limited to the structure illustrated in FIG. 2, and an organic transistor having an arbitrary structure can be used.

  In FIG. 2, the example in which the organic transistor and the display electrode are energized by connecting the drain electrode and the display electrode is shown. However, as an aspect in which the organic transistor is used in the present invention, For example, the organic transistor and the display electrode may be energized by connecting the source electrode and the display electrode.

  As described above, the organic transistor used in the present invention has an organic semiconductor layer made of an organic semiconductor material. As the organic semiconductor material, depending on the use of the organic semiconductor element of the present invention, etc. The material is not particularly limited as long as it is a material capable of forming an organic semiconductor layer having semiconductor characteristics, and organic semiconductor materials generally used for organic transistors can be used. Examples of such organic semiconductor materials include π-electron conjugated aromatic compounds, chain compounds, organic pigments, and organosilicon compounds. More specifically, low molecular organic semiconductor materials such as pentacene, and polypyrroles such as polypyrrole, poly (N-substituted pyrrole), poly (3-substituted pyrrole), and poly (3,4-disubstituted pyrrole). , Polythiophene, poly (3-substituted thiophene), poly (3,4-disubstituted thiophene), polythiophenes such as polybenzothiophene, polyisothianaphthenes such as polyisothianaphthene, and polychess such as polychenylene vinylene Nylene vinylenes, poly (p-phenylene vinylenes) such as poly (p-phenylene vinylene), polyanilines such as polyaniline and poly (N-substituted aniline), polyacetylenes such as polyacetylene, and polyazulenes such as polydiacetylene and polyazulene High molecular organic semiconductor materials such as Of these, pentacene or polythiophenes can be preferably used in the present invention.

  In addition, the thickness of the organic semiconductor layer used in the present invention is not particularly limited as long as the desired semiconductor characteristics can be expressed according to the type of the organic semiconductor material. In particular, the thickness of the organic semiconductor layer used in the present invention is preferably 1000 nm or less, more preferably in the range of 5 nm to 300 nm, and particularly preferably in the range of 20 nm to 100 nm.

  In addition, as described above, the organic transistor used in the present invention usually includes a gate electrode, a gate insulating layer, a source electrode and a drain electrode in addition to the organic semiconductor layer. In addition, since it is the same as that used for the organic transistor, detailed description is omitted here.

5. Organic semiconductor element The organic semiconductor element of the present invention is such that an organic transistor and a display electrode are formed on different surfaces of an insulating film, and the organic transistor and the display electrode are energized through a through-hole formed in the insulating film. As an aspect in which the organic transistor and the display electrode are connected through the through-hole, the organic transistor and the display electrode are electrically connected. There is no particular limitation as long as it is present. In particular, in the present invention, a current-carrying part is formed in the through-hole formed in the insulating film so as to penetrate the through-hole, and an organic transistor and a display electrode are connected to the current-carrying part, whereby organic It is preferable that the transistor and the display electrode are connected so as to be energized (see FIGS. 1 and 2).

  The energization part used in the present invention is not particularly limited as long as it is made of a conductive material so that the organic transistor and the display electrode can be energized. As such a current-carrying part, for example, one formed so as to close the through-hole of the insulating film, and formed only on the inner surface of the through-hole without closing the through-hole. Can be mentioned.

  Such an energizing unit will be described with reference to the drawings. In the organic-semiconductor element of this invention, it is a schematic sectional drawing which shows an example of the aspect in which the said electricity supply part is formed. As illustrated in FIG. 3A, the energizing portion 5 in the present invention may be formed so as to close the through hole of the insulating film 1, or illustrated in FIG. 3B. Thus, it may be formed only on the inner surface of the through hole without closing the through hole formed in the insulating film 1.

In this invention, even if it is the electricity supply part formed in said aspect, it can be used suitably.
In addition, when using what was formed only on the inner surface of the said through-hole without obstruct | occluding the through-hole provided in the insulating film as said electricity supply part, it forms on the inner surface in the said through-hole. The thickness of the current-carrying part is not particularly limited, but from the viewpoint of connecting the organic transistor and the display electrode with lower electrical resistance, it is preferably in the range of 100 nm to 10 μm, and preferably in the range of 200 nm to 5 μm. More preferably, it is further in the range of 500 nm to 5 μm.

  The conductive material used for the energization part is not particularly limited as long as an energization part capable of energizing the organic transistor and the display electrode can be formed. Examples of such a conductive material include metal materials such as gold, copper, silver, aluminum, chromium, nickel, and tin, and conductive polymer materials such as polyaniline and polyethylenedioxythiophene. In the present invention, any of these conductive materials can be suitably used. However, when using a material formed so as to close the through-hole of the insulating film as the current-carrying portion, copper or the like is used. It is preferable to use a plated metal or the like. On the other hand, when using what was formed only on the surface inside the said through-hole without obstruct | occluding the through-hole formed in the insulating film as said electricity supply part, gold | metal | money, silver, etc. It is preferable to use a conductive paste such as copper.

  In addition, the conductive material used for this invention may be only one type, or may be two or more types.

  The organic semiconductor element of the present invention is characterized in that the organic transistor and the display electrode are formed on different surfaces of the insulating film, and the position where the organic transistor is formed, The relationship with the position where the display electrode is formed is not particularly limited. Therefore, in the organic semiconductor element of the present invention, the position where the organic transistor is formed on the insulating film and the position where the display electrode is formed on the insulating film are the insulating film. May overlap in the thickness direction, or the positions of both may not overlap.

  FIG. 4 is a schematic cross-sectional view showing an example of the positional relationship where the organic transistor and the display electrode are formed in the organic semiconductor element of the present invention. As illustrated in FIG. 4, in the organic semiconductor element 10 of the present invention, the position where the organic transistor 2 is formed on the insulating film 1, and the display electrode 3 is formed on the insulating film 1. As illustrated in FIG. 4 (a), the relationship between the positions of the insulating films may overlap with each other in the thickness direction of the insulating film, or the positions of both may be as illustrated in FIG. 4 (b). It may be an aspect in which the two do not overlap.

  In the present invention, the position where the organic transistor is formed on the insulating film and the position where the display electrode is formed on the insulating film overlap in the thickness direction of the insulating film. Preferably, any of the embodiments in which the position where the organic transistor is formed on the insulating film and the position where the display electrode is formed on the insulating film do not overlap with each other is preferable. Can be used. The former aspect has an advantage that a higher aperture ratio can be realized particularly in the organic semiconductor element of the present invention, and the latter aspect particularly displays the organic semiconductor element of the present invention using transmitted light from a liquid crystal display device or the like. It has the advantage that it can also be used in devices.

  Although the organic semiconductor element of this invention has an insulating film, an organic transistor, and a display electrode at least, other arbitrary structures may be used as needed. As such an arbitrary configuration, a material capable of imparting a desired function to the organic semiconductor element of the present invention can be appropriately selected and used depending on the application of the organic semiconductor element of the present invention. Among these, a preferable thing used in the present invention as the above-mentioned arbitrary configuration is, for example, a passivation layer formed so as to cover the organic transistor. By using such a passivation layer, it is possible to prevent deterioration of the organic transistor with time, and thus there is an advantage that the organic semiconductor element of the present invention can be made more durable.

  FIG. 5 is a schematic cross-sectional view showing an example where a passivation layer is used in the organic semiconductor element of the present invention. As illustrated in FIG. 5, the organic semiconductor element 10 of the present invention may have a passivation layer 4 formed so as to cover the organic transistor 2.

Here, in the organic semiconductor element of the present invention, since the organic transistor and the display electrode are formed on different surfaces of the insulating film, a display having a high aperture ratio with respect to the organic semiconductor material used for the organic transistor. There is an advantage that it is possible to employ an optimum passivation layer while maintaining the electrode.
For example, when the performance of a semiconductor device manufactured by forming an insulating layer on the organic semiconductor layer is significantly deteriorated because the organic semiconductor material used in the organic transistor is easily eroded by an organic solvent or the like, sealing is performed. A method can be selected in which a material is applied around the organic transistor or around the base material on which the organic transistor is formed, and a polymer film or glass having a gas barrier property is bonded in an inert gas atmosphere. In other words, when an organic semiconductor element array in which organic semiconductor elements are integrated is sealed using the above-described passivation layer, the organic transistor and the display electrode are formed on different surfaces of the insulating film. Therefore, an organic semiconductor device having a display electrode with a high aperture ratio can be manufactured without separately processing a polymer film or glass having gas barrier properties used for bonding for forming the display electrode.

  Examples of the passivation layer used in the present invention include those made of fluororesins such as fluoroethylene, polyvinylidene fluoride (PVDF), and polyvinyl fluoride (PVD), and acrylics such as polymethyl methacrylate (PMMA). Examples thereof include resins, epoxy resins, cardo resins, silicone resins, and organic-inorganic hybrid materials.

6). Manufacturing Method of Organic Semiconductor Element The organic semiconductor element of the present invention can be manufactured by appropriately selecting and using a known method as a method for manufacturing an organic semiconductor element in which an organic transistor is generally used. However, the organic semiconductor element of the present invention can be manufactured in a simpler process by using the method for manufacturing an organic semiconductor element described in detail in the section “B. Method for Manufacturing an Organic Semiconductor Element” described later. is there.

B. Next, a method for manufacturing an organic semiconductor element of the present invention will be described. As described above, the organic semiconductor element manufacturing method of the present invention uses the organic semiconductor element substrate having an insulating film made of an insulating material and an electrode layer formed on the insulating film. An insulating film penetrating step of forming a through hole in the insulating film from the insulating film side of the element substrate, and a through hole formed in the insulating film so as to penetrate the through hole. A current-carrying part forming step of forming a current-carrying part made of a conductive material so as to be connected to the electrode layer; and on the insulating film of the organic semiconductor element substrate and to be connected to the current-carrying part. And an organic transistor forming step of forming an organic transistor.

  Such a method for producing an organic semiconductor element of the present invention will be described with reference to the drawings. FIG. 6 is a schematic view showing an example of the method for producing an organic semiconductor element of the present invention. As illustrated in FIG. 6, the method for producing an organic semiconductor element of the present invention includes an insulating film 1 made of an insulating material and an electrode layer 3 ′ formed on the insulating film 1. An insulating film penetrating step of forming a through hole in the insulating film 1 from the insulating film 1 side of the organic semiconductor element substrate 11 (FIG. 6 (a)). b)) Energization for forming a current-carrying portion 5 made of a conductive material so as to penetrate the through-hole in the through-hole formed in the insulating film 1 and to be connected to the electrode layer 3 ′. Part forming step (FIG. 6C), an organic transistor forming step for forming the organic transistor 2 on the insulating film 1 and connected to the current-carrying part 5 (FIG. 6D) The electrode layer 3 ' An electrode layer patterning step (FIG. 6E), an insulating film 1 having a through hole, an organic transistor 2 formed on the insulating film 1, and the insulating film 1 An organic semiconductor element 10 having a configuration in which a display electrode 3 formed on a surface opposite to the surface on which the organic transistor 2 is formed is connected to be energized through the energization unit 5 is manufactured. (FIG. 6 (e)).

According to the method for producing an organic semiconductor element of the present invention, in the organic transistor formation step, the organic transistor and the electrode layer are formed by forming an organic transistor on the insulating film of the organic semiconductor element substrate. The insulating film is formed on the opposite surfaces. Therefore, according to the present invention, an organic semiconductor element having a high aperture ratio can be manufactured by a simple process without forming a new structure such as an insulating layer.
According to the present invention, the organic transistor and the display electrode are formed on the opposite surfaces of the insulating film, so that the organic transistor has a higher density than the conventional one in order to increase the aperture ratio. Even if the display electrode is formed, it is possible to physically prevent the organic transistor and the display electrode from being short-circuited during the manufacturing process. Therefore, according to the present invention, an organic semiconductor element having a higher aperture ratio and more excellent transistor characteristics can be obtained.
Furthermore, according to this invention, the surface of an electrode can be made flat without an unevenness | corrugation by using the board | substrate for organic-semiconductor elements which has the structure by which the insulating film and the electrode layer were laminated | stacked previously. For this reason, according to the present invention, when used in a display device, an organic semiconductor element capable of achieving excellent display quality can be manufactured.
Therefore, according to the present invention, an organic semiconductor element using an organic transistor, which can display a high-definition image with excellent quality when used in a display device. Can be manufactured by a simple process.

The method for producing an organic semiconductor element of the present invention includes at least an insulating film penetration step, a current-carrying portion forming step, and an organic transistor forming step, and may include other optional steps as necessary. Is.
Hereafter, each process used for this invention is demonstrated in order.

1. Insulating Film Penetration Step First, the insulating film penetration step used in the present invention will be described. This step uses an organic semiconductor element substrate having an insulating film made of an insulating material and an electrode layer formed on the insulating film, from the insulating film side of the organic semiconductor element substrate. It is a step of forming a through hole in the insulating film.
Hereinafter, such an insulating film penetration step will be described.

(1) Substrate for organic semiconductor element First, the substrate for organic semiconductor element used in this step will be described. The substrate for an organic semiconductor element used in this step has an insulating film made of an insulating material and an electrode layer formed on the insulating film.
Here, the said electrode layer is used as a display electrode in the organic-semiconductor element manufactured by this invention.

The insulating film is not particularly limited as long as the insulating film is made of an insulating material having an insulating property and exhibits a desired insulating property.
Here, since the insulating film used in the present invention is the same as that described in the section “A. Organic semiconductor element”, description thereof is omitted here.

Moreover, the electrode layer used for this invention is used as a display electrode in the organic-semiconductor element manufactured by this invention. For this reason, the electrode layer used for this invention will not be specifically limited if it has the electroconductivity which can be utilized as a display electrode. Further, the electrode layer used in the present invention may be formed on the entire surface of the insulating film or may be formed in a pattern.
Here, the electrode layer used in the present invention is the same as the display electrode described in the section “A. Organic semiconductor element” except that the electrode layer may be formed on the entire surface of the insulating film. Therefore, detailed description here is omitted.

  In addition, when the electrode layer in this invention is formed in the whole surface of the said insulating film surface, the electrode layer patterning process of patterning the said electrode layer later will be used (refer FIG. 6).

(2) Method for forming a through hole Next, a method for forming a through hole in the insulating film in this step will be described. In this step, the method of forming a through hole in the insulating film is not particularly limited as long as the method can form a through hole in the insulating film from the insulating film side of the organic semiconductor element substrate. is not. Therefore, this step may be a case where through holes are formed in the insulating film and no holes are formed in the electrode layer, or through holes are formed in the insulating film, and the electrode layer is formed. Also, a hole that does not pass through may be formed.

  The method for forming the through hole in this step is not particularly limited as long as it can form a through hole of a desired size at a predetermined position. As such a method, a method of irradiating only the position where the through hole is formed with a laser beam or the like capable of decomposing the insulating film, or a mask in which only the position where the through hole is formed is an opening. A method of irradiating the surface of the insulating film with an energy beam capable of decomposing the insulating film, a dry film having a pattern in which only positions where through holes are formed on the insulating film are openings And a method of chemically etching the insulating film in the opening, and a pattern in which only the position where the through hole is formed on the insulating film is an opening is formed by a metal mask or the like, and an appropriate gas is formed. And a method of performing plasma etching. Any of these methods can be suitably used in this step, but among them, a processing method by laser or chemical etching is preferable from the viewpoint of forming fine through holes and an inexpensive processing method. Further, when a laser is used, a wavelength in the ultraviolet region having an ablation action that directly cuts the molecular bond of the polymer film is particularly preferable in order to form a hole with less burr.

2. Next, the energization part used in the present invention will be described. In this step, the current-carrying portion made of a conductive material is formed in the through-hole formed in the insulating film in the insulating film penetration step so as to penetrate the through-hole and connected to the electrode layer. It is a process of forming.

  In this step, the method for forming the energization part in the through hole formed in the insulating film is not particularly limited as long as the energization part can be formed so as to penetrate the through hole. As such a method, a method of forming a current-carrying part so as to close the through hole with a conductive material, and a conductive material only on the inner surface of the through hole without closing the through hole. And a method of forming a current-carrying part. As the former method, for example, a via fill method in which a plated metal is preferentially deposited inside the through hole can be cited. Examples of the latter method include a screen printing method using a conductive paste, an ink jet method using a conductive solution, a sputtering method, and a plating method. Any of these methods can be preferably used in this step, but the thickness of the current-carrying part in the through-hole is described in “2. Display electrode” above for the reliability of the current-carrying part. A plating method and a screen printing method that can be formed to a thickness of 10 mm are preferable.

  The conductive material used for forming the energization portion in this step is the same as that described in the above section “A. Organic semiconductor element”, and thus the description thereof is omitted here.

3. Organic Transistor Forming Step Next, the organic transistor forming step used in the present invention will be described. This step is a step of forming an organic transistor on the insulating film of the substrate for an organic semiconductor element and connected to the energization part formed in the energization part forming step.

The method for producing the organic transistor in this step is not particularly limited as long as the organic transistor can be formed so as to be connected to the energization part formed in the energization part forming step. In particular, in this step, an organic transistor having a structure including at least a gate electrode, a gate insulating layer, an organic semiconductor layer, a source electrode, and a drain electrode is formed so that the source electrode or the drain electrode is connected to the current-carrying portion. Preferably the method is used.
Here, as a method for forming the organic transistor used in this step, since a known method can be generally used as a method for forming the organic transistor, the description thereof is omitted here.

  Further, the structure of the organic transistor formed in this step is not particularly limited. Therefore, an organic transistor having a top gate structure may be formed, or an organic transistor having a bottom gate structure may be formed.

4). Other Steps The method for producing an organic semiconductor element of the present invention includes at least the insulating film penetration step, the current-carrying portion forming step, and the organic transistor forming step, but has other optional steps as necessary. You may do it. As such other processes, processes necessary for producing an organic semiconductor element having a desired function can be appropriately selected and used depending on the use of the organic semiconductor element produced by the present invention. Among these, as an optional step preferably used in the present invention, a passivation layer forming step is carried out after forming the organic transistor, and a passivation layer is formed so as to cover the organic transistor, and an electrode layer of the substrate for an organic semiconductor element is used. The electrode layer patterning process etc. which form a display electrode by patterning can be mentioned.

The method for forming the passivation layer in the passivation layer forming step is not particularly limited as long as the method can form a passivation layer made of a desired material. For forming a passivation layer in which a predetermined material is dissolved in a solvent. A method of applying a coating liquid so as to cover the organic transistor, a method of applying a dry film made of a predetermined material so as to cover the organic transistor, and applying a sealing material around the organic transistor, Examples thereof include a method of laminating a polymer film or glass having gas barrier properties in an inert gas atmosphere.
The material used to form the passivation layer is the same as that described in the above section “A. Organic semiconductor element”, and thus the description thereof is omitted here.

  In addition, the method for patterning the electrode layer in the electrode layer patterning step is particularly limited as long as it is a method capable of patterning the electrode layer into a desired shape according to the use of the organic semiconductor element produced by the present invention. is not. Examples of such a method include a photolithography method, a screen printing method using a conductive paste, a dispensing method, an ink jet method using a conductive solution, a dip coating method, a beat coating method, and a die coating method. it can.

5. Organic Semiconductor Element An organic semiconductor element manufactured by the method for manufacturing an organic semiconductor element of the present invention includes an insulating film having a through hole, an organic transistor formed on the insulating film, and the organic film of the insulating film. A display electrode formed on a surface opposite to the surface on which the transistor is formed has a configuration in which the display electrode is connected so as to be energized through the energization portion. Such an organic semiconductor element is the same as the organic semiconductor element according to the present invention described in the above section “A. Organic semiconductor element”, and thus the description thereof is omitted here.

C. Display Device Next, the display device of the present invention will be described. The display device of the present invention is characterized by using the organic semiconductor element of the present invention.

As the display device according to the present invention, the organic semiconductor element according to the present invention is used, and each pixel that contributes to image display is configured to be switched by each organic transistor included in the organic semiconductor element. It is not limited. Examples of the display device having such a configuration include a liquid crystal display device, an electrophoretic display device, and an organic EL display device.
The organic semiconductor element of the present invention can realize a high aperture ratio because the organic transistor and the display electrode are formed on different surfaces of the insulating film. Therefore, it is preferable that the display device of the present invention adopts an active matrix.

  The display device of the present invention is generally the same as the known device except that the organic semiconductor element of the present invention is used in place of the conventional TFT array, and detailed description thereof is omitted here. .

  The present invention is not limited to the above embodiment. The above-described embodiment is an exemplification, and the present invention has substantially the same configuration as the technical idea described in the claims of the present invention, and any device that exhibits the same function and effect is the present invention. It is included in the technical scope of the invention.

  Hereinafter, the present invention will be specifically described with reference to examples.

[Example]
1. Through-hole forming process A 150 mm × 150 mm single-sided copper foil polyimide (Cu thickness: polyimide thickness = 9 μm: 25 μm) is used as a substrate for an organic semiconductor element, YAG laser is irradiated from the polyimide side, and a 50 μmφ through-hole is only polyimide Formed.

2. Next, a current-carrying portion was formed in the through-hole by depositing and growing copper from copper on the bottom surface of the through-hole by copper electrolytic plating. At this time, the copper that had been grown by growth grew so as to close the through-hole, and according to the measurement result of the contact-type step gauge, the copper had grown to a height of 23 μm from the copper foil surface at the bottom of the through-hole.

3. Electrode Layer Patterning Step Next, a photoresist was spin coated on the copper foil surface. Thereafter, the substrate was dried at 100 ° C. for 1 minute, and then subjected to pattern exposure at 50 mJ / cm ² . Next, a developing step was performed to remove the photoresist other than the portion to be the display electrode, and then the copper exposed in the developing step was removed in the etching step. Subsequently, the resist on the display electrode formed in the development process and the etching process was stripped with a resist stripping solution to form a 450 μm square display electrode.

4). Organic transistor formation process (gate electrode formation process)
Next, aluminum was formed into a film on the polyimide surface opposite to the display electrode by a sputtering method to form an aluminum layer having a thickness of 150 nm. Next, a photoresist was spin-coated on the aluminum layer. Then, after making it dry at 100 degreeC for 1 minute, pattern exposure was carried out at 50 mJ / cm < ² >. Next, a developing step was performed to remove the photoresist other than the portion to be the gate electrode, and then the aluminum exposed in the developing step was removed in the etching step. Next, the resist on the gate electrode pattern formed in the development process and the etching process was stripped with a resist stripping solution to form a gate electrode.

(Gate insulation layer formation process)
Next, a photoresist (acrylic negative resist) was spin-coated as a gate insulating layer on the polyimide surface of the organic semiconductor element substrate. Then, after drying at 120 ° C. for 2 minutes, pattern exposure was performed at 350 mJ / cm ² . Next, a development process was performed to remove portions other than the gate electrode, and then the film was dried in an oven at 150 ° C. for 30 minutes to form a gate insulating layer having a thickness of 1.1 μm.

(Source / drain electrode formation process and conduction process between the current-carrying part in the through hole and the drain electrode)
After forming the gate insulating layer, on the surface on which the gate insulating layer is formed, screen printing of Ag nano paste (manufactured by Fujikura Kasei Co., Ltd.) is performed using a screen mask having source / drain electrode-shaped openings. Formed. Since the opening of the drain electrode of the screen mask used at this time has an opening to the region of the through-hole formed in the polyimide film in the through-hole forming step, the inside of the through-hole is simultaneously formed with the source / drain electrode formation. The energization part and the drain electrode were made conductive. At this time, a screen plate having a 500 mesh and 1 μm emulsion was used. The printing conditions were a printing pressure of 0.185 MPa, a clearance of 2.6 mm, and a squeegee speed of 200 mm / sec. Thereafter, the organic semiconductor element substrate was baked at 150 ° C. for 30 minutes. When the formed source electrode and drain electrode were observed with a reflection optical microscope, the distance between the source electrode and the drain electrode (channel length) was 70 μm. The film thickness of the source / drain electrodes was 2 μm.

(Organic semiconductor layer formation process)
Next, an organic semiconductor layer was formed by discharging a thiophene-based polymer organic semiconductor between channels of the source electrode and the drain electrode using an inkjet method on the organic semiconductor element substrate on which the source electrode and the drain electrode were formed. . As the polymer organic semiconductor, a solution containing a solid content of 0.5 wt% and a solvent decahydronaphthalene was used. Thereafter, the organic semiconductor element substrate was gradually heated to 160 ° C. at a rate of 20 ° C./min, held at 160 ° C. for 10 min, and then gradually cooled to room temperature at a rate of 6 ° C./min. The thickness of the organic semiconductor layer was about 100 nm.

5. Passivation Layer Formation Step Next, a photoresist (acrylic negative resist) was spin coated as a passivation layer so as to cover the formed organic semiconductor layer. Thereafter, the substrate was dried at 120 ° C. for 2 minutes and then exposed at 350 mJ / cm ² . Thereafter, it was dried in an oven at 150 ° C. for 30 minutes to form a passivation layer having a thickness of 8 μm.

6). Next, the electronic paper was sandwiched between the display electrode and the ITO electrode formed on the entire surface of the PET film and bonded together.

7). Evaluation As a result of measuring the transistor characteristics of the organic semiconductor transistor of the organic semiconductor element through contact with the display electrode made on the opposite side of the transistor through the film, the transistor is driven as a transistor through the current-carrying part in the through hole. I understood. At this time, the mobility of the organic semiconductor transistor was estimated to be 2.0 × 10 ⁻² cm ² / Vs, the ON / OFF ratio was 6 digits, and the threshold voltage was −2V. The measurement conditions were that the gate voltage was applied in increments of -2V from 50V to -80V. Next, the source-drain voltage was fixed at −80 V, and the current value flowing between the source and drain was measured. Further, in any transistor evaluation, measurement was performed in the air under light shielding.
Moreover, since the through-hole was formed only in the film with respect to the single-sided copper foil polyimide, a step in the through-hole region on the display electrode was not recognized according to the contact type step meter. Furthermore, when the contrast ratio of the bonded electronic paper was measured, it was 9: 1.

[Comparative example]
Using a polyimide film with a thickness of 25 μm as a base material, an organic transistor was produced on the base material by the same method from the gate electrode formation step to the organic semiconductor layer formation step of the example.
Thereafter, a passivation layer was formed in the same manner except that pattern exposure was performed in the passivation layer forming step. Next, the display electrode was formed in the position which overlaps with the position of an organic-semiconductor element in the thickness direction of a film. Details of the passivation layer forming step and the display electrode forming step are shown below.

(Passivation layer formation process)
A photoresist (acrylic negative resist) was spin-coated as a passivation layer so as to cover the organic semiconductor element formed on the polyimide film. Then, after drying a base material for 2 minutes at 120 degreeC, pattern exposure was performed at 350 mJ / cm < ² > using the mask which shielded a part of drain electrode area | region of an organic-semiconductor element. Next, the resist that was shielded from light at the time of exposure in the developing process was removed, and a through hole that exposed a part of the drain electrode of the organic semiconductor element was formed in the passivation layer. Thereafter, it was dried in an oven at 150 ° C. for 30 minutes to form a passivation layer having a thickness of 8 μm.

(Display electrode formation process)
After the passivation layer was formed, Ag nanopaste (manufactured by Fujikura Kasei Co., Ltd.) was screen-printed using a screen mask having a display electrode shape as an opening to form a 450 μm square display electrode. The display electrode formed at this time was printed so that the drain electrode exposed in the passivation process was positioned in the display electrode pattern, and the drain electrode and the display electrode were made conductive. The screen plate used was 500 mesh and 1 μm emulsion. The printing conditions were a printing pressure of 0.185 MPa, a clearance of 2.6 mm, and a squeegee speed of 200 mm / sec. Thereafter, the substrate was baked at 150 ° C. for 30 minutes. The film thickness of the display electrode was 2 μm.

(Electronic paper bonding process)
Next, the electronic paper was sandwiched between the display electrode and the ITO electrode formed on the entire surface of the PET film and bonded together.

(Evaluation)
A measurement terminal was brought into contact with the display electrode formed on the passivation layer, and the transistor characteristics of the organic semiconductor transistor of the organic semiconductor element were measured. At this time, the mobility of the organic semiconductor transistor was estimated to be 2.0 × 10 ⁻² cm ² / Vs, the ON / OFF ratio was 6 digits, and the threshold voltage was −2V. The measurement conditions were that the gate voltage was applied in increments of -2V from 50V to -80V. Next, the source-drain voltage was fixed at −80 V, and the current value flowing between the source and drain was measured. Further, in any transistor evaluation, measurement was performed in the air under light shielding.
Further, in the passivation layer forming step, a through hole exposing a part of the drain of the organic semiconductor element is formed in the passivation layer, and then the display electrode is formed by the screen printing method, so there is a step in the through hole region. A display electrode was formed. According to the contact level difference meter, a level difference of 8 μm corresponding to the thickness of the passivation layer was recognized. Further, since the display electrode is formed on the formed organic semiconductor element through the passivation layer, a gentle step of 1 μm was observed in the region other than the through-hole region of the display electrode. And when the contrast ratio of the bonded electronic paper was measured, it was 7: 1.

  From the above, when a through-hole is formed in a single-sided copper foil polyimide, there is no step in the display electrode, and a uniform voltage is applied to the electronic paper between the ITO electrode facing the display electrode, so a higher contrast ratio It is thought that I was able to get.

It is a schematic sectional drawing which shows an example of the organic-semiconductor element of this invention. It is a schematic sectional drawing which shows the other example of the organic-semiconductor element of this invention. It is a schematic sectional drawing which shows the other example of the organic-semiconductor element of this invention. It is a schematic sectional drawing which shows the other example of the organic-semiconductor element of this invention. It is a schematic sectional drawing which shows the other example of the organic-semiconductor element of this invention. It is the schematic which shows an example of the manufacturing method of the organic-semiconductor element of this invention. It is a schematic sectional drawing which shows an example of the conventional organic semiconductor element.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Insulating film 2 ... Organic transistor 2a ... Gate electrode 2b ... Gate insulating layer 2c ... Source electrode 2d ... Drain electrode 2e ... Organic-semiconductor layer 3 ... Display electrode 3 '... Electrode layer 4 ... Passivation layer 5 ... Current supply part 10 ... Organic semiconductor element 11 ... Substrate for organic semiconductor element

Claims (1)

Using an organic semiconductor element substrate having an insulating film made of an insulating material and an electrode layer formed on only one surface of the insulating film and having a film thickness in the range of 100 nm to 10 μm,
Insulating film penetration step of forming a through-hole having a diameter in the range of 30 μm to 100 μm so that the insulating film penetrates from the organic semiconductor element substrate and the electrode layer does not penetrate from the insulating film side. When,
In the through-hole formed in the insulating film, it is formed only on the inner surface of the through-hole so as not to block the through-hole so as to penetrate the through-hole, and conductive to connect to the electrode layer. An energization part forming step for forming an energization part made of a conductive material;
Forming an organic transistor on the insulating film of the substrate for an organic semiconductor element and forming an organic transistor so as to be connected to the current-carrying part, and
The organic semiconductor element, wherein the insulating film penetration step is a method of irradiating only a position where the through hole is formed with a laser beam having a wavelength in an ultraviolet region capable of decomposing the insulating film. Manufacturing method.

Images