JP5756605B2 - Thin film transistor - Google Patents

Description

  The present invention provides a thin film transistor provided with a primer layer using a curable composition having excellent transparency and chemical resistance and formed on a planarized film.

  In recent years, application studies of heat-resistant transparent film materials such as PEN, PES, and PET have been actively conducted as transparent substrate materials for flexible displays, and are described in Patent Documents 1 to 3 and the like. However, when a TFT circuit is formed on a transparent resin film for driving a display, the manufacturing method is limited because the film surface irregularities, film heat resistance, and process resistance such as etching and sputtering are limited. There is a problem that the characteristics do not appear.

  In particular, the flatness of the film, which is formed on the film, greatly affects the electrical characteristics and the defect rate of the transistor, and is essential for forming an excellent device. However, at present, in order to form a flat film having good process resistance, heating at a high temperature such as 200 ° C. or more is necessary, and when using a film substrate, it is not suitable from the viewpoint of dimensional stability. Therefore, it is essential to develop a primer material that can provide satisfactory characteristics under mild conditions such as 150 ° C. or lower.

JP 2001-221987 JP 2008-147410 A JP 7-64038 A

  In view of the above circumstances, an object of the present invention is to provide a thin film transistor formed on a transparent film using a curable composition excellent in flatness, heat resistance and chemical resistance as a primer layer of the film.

In view of the above circumstances, as a result of intensive studies by the present inventors, it has been found that the above problems can be solved by using a resin composition having the following features, and the present invention has been completed. That is, the present invention has the following configuration.

  1). A thin film transistor formed on a resin film provided with a primer layer coated with a curable composition.

  2). 1. The thin film transistor according to 1), wherein the resin film provided with the primer layer has a light transmittance at 500 nm of 80% or more.

  3). The thin film transistor according to 1) or 2), wherein the curable composition is a polysiloxane compound.

  4). The thin film transistor according to any one of 1) to 3), wherein the curable composition is cured by a hydrosilylation reaction.

  5). The curable composition has the following general formula (I)

(Wherein R ¹ represents a hydrogen atom or a monovalent organic group having 1 to 50 carbon atoms, and each R ¹ may be different or the same) and is a compound containing a structure represented by The thin film transistor according to any one of 1) to 4).

  6). The thin film transistor according to any one of 1) to 5), wherein the curable composition has a photopolymerizable functional group.

  7). The thin film transistor according to 6), wherein the photopolymerizable functional group is at least one selected from the group consisting of an epoxy group, a crosslinkable silicon group, and a (meth) acryloyl group.

  8). 6. The thin film transistor according to 6), wherein the photopolymerizable functional group is an alicyclic epoxy group.

  9). 6. The thin film transistor according to 6), wherein the photopolymerizable functional group is an alkoxylyl group.

  10). The thin film transistor according to any one of 1) to 9), wherein the resin film is a polyester material.

  11). The thin film transistor according to any one of 1) to 10), wherein the semiconductor layer is formed using an organic semiconductor.

  12). The thin film transistor according to any one of 1) to 11), wherein the curable composition according to any one of 1) to 9) is further applied as a gate insulating film.

According to the present invention, a thin film transistor having good characteristics can be provided on a transparent film using a curable composition excellent in flatness, heat resistance, and chemical resistance as a primer layer of the film.

It is sectional drawing in the one aspect | mode of the thin-film transistor concerning this invention.

The details of the invention will be described.
In this invention, the thin-film transistor formed on the transparent film which provided the primer layer using the curable composition excellent in planarization property, heat resistance, and chemical resistance can be given.

(Configuration of transistor)
The thin film transistor obtained by the present invention refers to a field effect transistor (FET), which is a three-terminal transistor formed from a source, a drain, and a gate electrode, and a four-terminal transistor including a back gate. A thin film transistor in which a current between a source and a drain is controlled by a channel electric field generated by applying a voltage to is shown.

  As for the thin film transistor structure, there are various combinations and arrangements depending on the display device structure to be applied, such as bottom gate type, top gate type, and source / drain electrode arrangement with respect to the arrangement of the gate electrode, such as bottom contact type and top contact type. Design is possible.

  Various types of semiconductor layer types of thin film transistors, for example, silicon-based semiconductors such as amorphous silicon (aSi), polysilicon (pSi), and microcrystalline silicon (μ-cSi), oxide-based semiconductors such as ZnO and InGaZnO, Typical examples include organic semiconductors using compounds such as pentacene, oligothiophene, and phthalocyanine, and carbon-based semiconductors using carbon nanotubes, graphene, fullerenes, and the like. Among these, those using an organic semiconductor are preferable from the viewpoint of being a low-temperature process and being easily formed on a plastic film.

  As for the method for forming the semiconductor layer, various methods such as CVD, sputtering, vapor deposition, and coating can be used. It is preferable that it can be formed by sputtering, vapor deposition, or coating method from the viewpoint of easy formation on a plastic film in a low temperature process, and it is formed by coating method from the viewpoint of cost merit because it can be mass-produced using a simple process such as a printing process. What can be done is preferred.

  Regarding the electrode material, it can be used without any particular limitation, but it can be easily obtained, such as Au, Al, Pt, Mo, Ti, Cr, Ni, Cu, ITO, PEDOT / PSS, etc., conductive polymer, conductive paste Metal ink or the like is preferably used. Al, Mo, Ti, Cr, Ni, Cu and the like are preferable because of low resistance and high conductivity, and ITO and PEDOT / PSS are preferable from the viewpoint of being applicable to places where transparency is required. Au and Pt are preferable from the viewpoint that the surface is hardly oxidized and excellent in stability, and conductive polymers such as PEDOT / PSS, conductive paste, and metal ink are preferably used because they can be formed by a printing process.

Further, various materials such as metal oxides such as SiO ₂ and TiO ₂ , SiN films, and resin compositions can be applied to insulating film materials such as gate insulating films and passivation films, and the formation method is also CVD, sputtering, Various methods such as vapor deposition and coating have been proposed. However, for development to a flexible display or the like by a printing process, those that can be easily formed by coating and printing are preferred, as with semiconductor materials, and the curable compositions described below can also be suitably used.

(Transistor characteristics)
Thin film transistors are widely used as pixel transistors in active matrix flat panel displays. In order to drive the display stably, the transistor characteristics include threshold voltage, hysteresis, and ON / OFF ratio as important characteristics.

The threshold voltage mentioned here indicates a voltage value at which a transistor starts to be turned on and a current starts to flow through the semiconductor layer. In the current transfer characteristics of the transistor, the current Id flowing between the source / drain and the gate applied voltage Vg (Id) ) It is calculated from the intersection of the extension line of the linear portion and the Vg axis in the graph between ^1/2 and Vg. From the viewpoint of reducing power consumption for driving the transistor, the threshold voltage is preferably -5 to 5 V, more preferably -3 to 3 V, and particularly preferably -1.5 to 1.5 V. .

  Hysteresis indicates the reproducibility of current transfer characteristics with respect to repeated transistor operation, and is represented by the difference in threshold voltage during repeated operation. For stable driving when used as a display, the hysteresis is preferably 5 V or less, more preferably 3 V or less, and particularly preferably 1.5 V or less.

The ON / OFF current ratio is expressed as a ratio (Ion / Ioff) of the maximum current value and the minimum current value of the current Id flowing between the source and the drain in the current transfer characteristic of the transistor. It is preferably 10 ⁴ or more, and more preferably 10 ⁵ or more, because it shows excellent performance and enables driving of a system that requires a large current for driving.

  The voltage Vg applied between the source / drain electrodes Vd and the gate electrode is not particularly limited, but may be appropriately selected and applied depending on the semiconductor material used in the range of −50 to 50 V and the driving method. From the viewpoint that power consumption as a transistor can be suppressed, it is preferably −50 to 50 V, and more preferably a transistor driven in the range of 0 to 20 V.

(About resin film)
In order to develop a flexible display or the like, the thin film transistor needs to be provided on a flexible substrate. Examples of the material having flexibility include a metal thin film and a resin film. The resin film is excellent from the viewpoint of the processability, handling and transparency of the substrate. The resin film that can be used is not particularly limited, and examples thereof include polyester, polysulfone, polyolefin, cycloolefin, polyacryl, polycarbonate, polyarylate, polystyrene, polyimide, and polyaramid. It is done.

  Of these, polyesters, polyimides, polyaramids, cycloolefins, polyarylates are preferred from the viewpoint of excellent heat resistance, and polyesters and cycloolefins are more preferred from the viewpoint of excellent transparency. From the viewpoint of low gas permeability such as oxygen and water vapor, a polyester type is preferred.

  Polyester-based PET, PEN, polysulfone-based PES, PSF, PPS, polyolefin-based PP, PE, cycloolefin-based ZEONEX (manufactured by Nippon Zeon), Arton (manufactured by JSR), polyacrylic An example of the system is PMMA.

  When a thin film transistor is formed on a resin film, an electrode layer, a semiconductor layer, and an insulating film layer are laminated as a thin film. However, in some cases, the transistor does not exhibit satisfactory characteristics. The invention of the present application has found that transistor characteristics can be expressed by providing a primer layer using a curable composition on a resin film.

  The flatness Ra of the primer layer is preferably 30 nm or less, more preferably 10 nm or less, and particularly preferably 5 nm or less. By providing the primer layer of the present invention, a transistor formed thereon can exhibit good characteristics without impairing chemical resistance, heat resistance, transparency, and the like. The flatness Ra is preferably as small as possible, but practically 0.05 or more, more preferably 0.1 or more, and particularly preferably 1 or more.

  In addition, in order to apply to a display that uses light from a backlight such as a liquid crystal, the substrate film is preferably highly transparent from the viewpoint of power saving, and the primer using the curable composition of the present invention. The light transmittance at 500 nm of the film provided with the layer is preferably 80% or more, more preferably 85% or more, and further preferably 90% or more. From the viewpoint of color reproducibility, the substrate film is preferably less colored (colorless).

(Method for forming primer layer)
The thickness of the primer layer of the present invention is not particularly limited as long as the surface flatness of the film can be ensured. However, when the film on which the primer layer is formed is bent, the film has followability and hardly generates cracks. In view of the above, it is preferably as thin as possible, preferably 10 μm or less, and more preferably 5 μm or less.

  The layering method using the curable composition is not particularly limited, and spin coating, dip coating, roll coating, screen coating, spray coating, spin casting, flow coating, screen printing, ink jet or drop casting, etc. The film can be formed by the method. Further, viscosity adjustment with a solvent and surface tension adjustment with a surfactant may be appropriately performed in accordance with the state of the substrate on which the film is formed.

  This primer layer is preferably used after being layered with a curable composition and then cured. The curing method is not particularly limited, such as heat curing, light curing, moisture curing and the like. In the heat curing, the heating temperature is not particularly limited, but is preferably 180 ° C. or less from the viewpoint that the influence on a low heat-resistant member around the transistor, for example, the substrate material is small, and the dimensional stability of the resin substrate Considering heat resistance, the temperature is preferably 150 ° C. or lower. Moreover, what has photocurability is preferable from a viewpoint that it can be formed at low temperature and can be manufactured in a short time.

(About curable composition)
The curable composition of the present invention will be described.
The curable composition can be layered in a solution state and is not particularly limited as long as it exhibits high flatness, chemical resistance, heat resistance, and transparency. Examples include compounds, phenolic compounds, benzoxazole compounds, imide compounds, cyanate compounds, fluorine compounds, and polysiloxane compounds.

  The thin film to be formed is preferably a polysiloxane compound from the viewpoint of high heat resistance and excellent withstand voltage. The polysiloxane compound contained in the curable composition is a compound or polymer containing a siloxane unit (Si—O—Si), and is not particularly limited in terms of structure.

Among the siloxane units in these compounds, the cured product obtained with a higher content of T unit (X ₃ SiO _3/2 ) or Q unit (SiO _4/2 ) in the constituent component has higher hardness and more heat resistance reliability. In addition, the higher the content of M units (X ₃ SiO _1/2 ) or D units (X ₂ SiO _2/2 ), the more cured and the lower the stress is obtained.
In the resin structure, the following general formula (I)

(In the formula, R ¹ represents a hydrogen atom or a monovalent organic group having 1 to 50 carbon atoms, and each R ¹ may be different or the same). It is preferable from the viewpoint that it can be a dense primer layer with excellent chemical resistance and heat resistance.

  Although it does not specifically limit as a method of introduce | transducing the structure of general formula (I) into a curable composition, The method of adding a general purpose isocyanuric ring containing compound is mentioned. Examples of the isocyanuric ring-containing compound include triallyl isocyanurate, diallyl isocyanurate, monoallyl isocyanurate, triglycidyl isocyanurate, diallyl monoglycidyl isocyanurate, monoallyl diglycidyl isocyanurate, tris (2- (meth) acryloyloxyethyl) Examples include isocyanurate and tri (3-mercaptopropionyloxyethyl) isocyanurate, which can be appropriately selected according to the crosslinking reaction of the resin composition.

  In a curable composition having a hydrosilylation reaction as a curing reaction, triallyl isocyanurate having an alkenyl group, diallyl isocyanurate, monoallyl isocyanurate, diallyl monoglycidyl isocyanurate, monoallyl diglycidyl isocyanurate, tris (2- ( (Meth) acryloyloxyethyl) isocyanurate is preferred, and in a curable composition having a cationic polymerization reaction as a curing reaction, triglycidyl isocyanurate, diallyl monoglycidyl isocyanurate, monoallyl diglycidyl isocyanurate, tris (trimethoxysilyl) Propyl) isocyanurate is preferred, and in curable compositions having a radical polymerization reaction as a curing reaction, triallyl isocyanurate, diallyl isocyanurate, monoallyl isocyanurate Diallyl monoglycidyl isocyanurate, monoallyl diglycidyl isocyanurate, tris (2- (meth) acryloyloxyethyl) isocyanurate, tri (3-mercapto-propionyl b oxyethyl) isocyanurate are preferred.

  Furthermore, a compound obtained by partially reacting the general-purpose isocyanuric ring-containing compound and other compounds in advance can also be applied. When introduced into a polysiloxane compound, a compound obtained by hydrosilylation of a polysiloxane compound having an SiH group and an isocyanuric ring compound having an alkenyl group in advance, an isocyanuric ring-containing compound having an alkoxysilyl group, or an epoxy group It is possible to use a compound obtained by reacting an isocyanuric ring-containing compound having a polysiloxane and a polysiloxane compound having an alkoxysilyl group in advance by hydrolysis condensation, which is preferable from the viewpoint of compatibility, and the chemical resistance and heat resistance of the resulting cured product. From the viewpoint of excellent properties, those using a compound that has been hydrosilylated in advance are preferred.

  In addition, although the curable composition used for this invention is used as a primer layer which planarizes the surface of a resin film, after providing a primer layer and providing a gate electrode etc., the curable composition used for this invention It can be used as a gate insulating film by applying an object to form a thin film transistor.

(About curing reaction)
When the curable composition is provided in a layer form and post-cured, it may be cross-linked by applying heat or light energy from the outside to exhibit high chemical resistance and heat resistance. The curing reaction is not particularly limited, but examples include a cationic polymerization reaction, a radical polymerization reaction, a hydrosilylation reaction, a polycondensation reaction, and the like, and a viewpoint that the curing reaction can proceed efficiently with small energy. More preferred are cationic polymerization reaction, radical polymerization reaction, and hydrosilylation reaction, and those using hydrosilylation reaction are preferred from the viewpoint that unreacted sites are not easily generated.

  The curable composition capable of hydrosilylation reaction is not particularly limited as long as it is a composition containing an alkenyl group, a SiH group and a hydrosilylation catalyst. The compound having an alkenyl group can be used without particular limitation regardless of a polysiloxane compound or an organic compound.

  Specific examples of linear polysiloxanes having alkenyl groups include poly or oligosiloxanes whose ends are blocked with dimethylvinylsilyl groups, poly or oligosiloxanes having vinyl groups in the side chains, tetramethyldivinyldisiloxane, hexa Examples of methyltrivinyltrisiloxane and the above cyclic siloxane containing SiH groups include those in which SiH groups are substituted with alkenyl groups such as vinyl groups and allyl groups.

  Examples of the alkenyl group-containing organic compound do not include a siloxane unit (Si—O—Si) such as a polysiloxane-organic block copolymer or a polysiloxane-organic graft copolymer, and C, H, N, Particularly, if it is a compound composed of atoms selected from the group consisting of O, S and halogen, and is an organic compound having one or more carbon-carbon double bonds having reactivity with SiH group in one molecule It is not limited. Further, the bonding position of the carbon-carbon double bond having reactivity with the SiH group is not particularly limited, and may be present anywhere in the molecule.

  The organic compounds can be classified into organic polymer compounds and organic monomer compounds. Examples of the organic polymer compounds include polyether-based, polyester-based, polyarylate-based, polycarbonate-based, saturated hydrocarbon-based, unsaturated hydrocarbon-based compounds. Hydrogen-based, polyacrylic acid ester-based, polyamide-based, phenol-formaldehyde-based (phenolic resin-based), and polyimide-based compounds can be used. Examples of organic monomer compounds include aromatic hydrocarbons such as phenols, bisphenols, benzene and naphthalene: aliphatic hydrocarbons such as linear and alicyclic: heterocyclic compounds and their A mixture etc. are mentioned.

  Specific examples of organic monomer compounds include diallyl phthalate, triallyl trimellitate, diethylene glycol bisallyl carbonate, trimethylolpropane diallyl ether, trimethylolpropane triallyl ether, pentaerythritol triallyl ether, pentaerythritol tetraallyl. Ether, 1,1,2,2-tetraallyloxyethane, diarylidenepentaerythritol, triallyl cyanurate, triallyl isocyanurate, diallyl monobenzyl isocyanurate, 1,2,4-trivinylcyclohexane, 1, 4-butanediol divinyl ether, nonanediol divinyl ether, 1,4-cyclohexane dimethanol divinyl ether, triethylene glycol divinyl ether, trimethyl Propane trivinyl ether, pentaerythritol tetravinyl ether, diallyl ether of bisphenol S, divinylbenzene, divinylbiphenyl, 1,3-diisopropenylbenzene, 1,4-diisopropenylbenzene, 1,3-bis (allyloxy) adamantane 1,3-bis (vinyloxy) adamantane, 1,3,5-tris (allyloxy) adamantane, 1,3,5-tris (vinyloxy) adamantane, dicyclopentadiene, vinylcyclohexene, 1,5-hexadiene, 1, , 9-decadiene, diallyl ether, bisphenol A diallyl ether, 2,5-diallylphenol allyl ether, and oligomers thereof, 1,2-polybutadiene (1,2 ratio of 10 to 100%, preferably The 1,2 Ratio 50-100% of those), allyl ether of novolak phenol, and the like allylated polyphenylene oxide is.

  Examples of the compound having an SiH group include poly or oligosiloxanes whose ends are blocked with dimethylhydrosilyl groups, and cyclic or chain poly or oligosiloxanes having SiH groups in the side chains.

  Among these, cyclic siloxane is preferable from the viewpoint of obtaining a thin film having excellent process resistance, and specific examples include 1,3,5,7-tetrahydrogen-1,3,5,7-tetramethylcyclotetrasiloxane, 1- Methyl-3,5,7-trihydrogen-1,3,5,7-tetramethylcyclotetrasiloxane, 1,3-dimethyl-5,7-dihydrogen-1,3,5,7-tetramethylcyclotetra Siloxane, 1-propyl-3,5,7-trihydrogen-1,3,5,7-tetramethylcyclotetrasiloxane, 1,3-dipropyl-5,7-dihydrogen-1,3,5 7-tetramethylcyclotetrasiloxane, 1,3,5-trihydrogen-7-hexyl-1,3,5,7-tetramethylcyclotetrasiloxy 1,5-dihydrogen-3,7-dihexyl-1,3,5,7-tetramethylcyclotetrasiloxane, 1,3,5-trihydrogen-trimethylcyclosiloxane, 1,3,5, 7,9-pentahydrogen-1,3,5,7,9-pentamethylcyclosiloxane, 1,3,5,7,9,11-hexahydrogen-1,3,5,7,9,11 -Hexamethylcyclosiloxane and the like are exemplified.

  In particular, 1,3,5,7-tetrahydrogen-1,3,5,7-tetramethylcyclotetrasiloxane is preferable from the viewpoint of availability.

  Further, from the viewpoint of obtaining a tough thin film, it is also preferable to use an oligomer in which a polysiloxane compound or an organic compound and a polysiloxane compound are partially crosslinked in advance. The partial cross-linking reaction is not particularly limited, but forms an electrically and thermally stable C—Si bond after the reaction as compared with hydrolysis condensation, and the reaction control is easy. It is preferable to apply a hydrosilylation reaction from the viewpoint that a crosslinking group hardly remains.

  The monomer for partial crosslinking is not particularly limited, and the siloxane compound having an SiH group and the siloxane compound or organic compound having an alkenyl group can be used in appropriate combination.

  A catalyst is preferably used for the hydrosilylation reaction, and a known hydrosilylation catalyst may be used as the catalyst. From the viewpoint of catalytic activity, chloroplatinic acid, platinum-olefin complexes, platinum-vinylsiloxane complexes and the like are preferable. Moreover, these catalysts may be used independently and may be used together 2 or more types.

  As the curable composition capable of cationic polymerization, a curable composition containing a compound having a cationic polymerizable functional group is particularly shown. Examples of the cationic polymerizable functional group include an epoxy group, an oxetanyl group, a hydrolyzable silicon group, and a vinyl ether group. From the viewpoint of high cationic polymerizability, an alicyclic epoxy group, an oxetanyl group, an alkoxysilyl group, SiH, and the like. Group is preferable, an epoxy group is more preferable from the viewpoint of availability, and an alicyclic epoxy group is preferable from the viewpoint of excellent reactivity.

  Further, as the curable composition capable of radical polymerization, a curable composition containing a compound having a radical polymerizable functional group is particularly shown. Examples of the radical polymerizable functional group include an acryloyl group, a methacryloyl group, a vinyl group, and an allyl group. From the viewpoint of reactivity, an acryloyl group and a methacryloyl group are preferable.

  In particular, from the viewpoint of high heat resistance and excellent dielectric strength, polysiloxane compounds into which the cationic polymerizable functional groups and radical polymerizable functional groups exemplified above are introduced are preferable. The method to be introduced is not particularly limited. From the viewpoint of forming an electrically and thermally stable C—Si bond after the reaction, and easy control of the reaction and hardly leaving an uncrosslinked group, a hydrosilylation reaction is used. The method of introduction is preferred.

  The compound used for introducing the functional group is not particularly limited, and the polysiloxane compound having the SiH group described above, the alkenyl group having hydrosilylation reactivity and the cationic polymerizable functional group or radical polymerizable functional group on the same molecule. These compounds can be used in appropriate combination.

(solvent)
When the curable composition is provided uniformly in a layered form, a solvent may be used. Solvents that can be used are not particularly limited, and specific examples include hydrocarbon solvents such as benzene, toluene, hexane, and heptane, tetrahydrofuran, 1,4-dioxane, 1,3-dioxolane, diethyl ether, and the like. Ether solvents, acetone solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, glycol solvents such as propylene glycol-1-monomethyl ether-2-acetate (PGMEA), ethylene glycol diethyl ether, chloroform, methylene chloride, , 2-dichloroethane and other halogen-based solvents can be suitably used.

  In particular, toluene, tetrahydrofuran, propylene glycol-1-monomethyl ether-2-acetate, methyl isobutyl ketone, chloroform, and the like are preferable from the viewpoint of easily forming a layer film with little thickness unevenness.

The amount of the solvent to be used can be appropriately set, but it is 1 to 1000 parts by weight per 100 parts by weight of the curable composition, more preferably 10 to 1000 parts by weight, and particularly 50 to 500 parts by weight. Is possible.
If the amount used is small, it is difficult to obtain the effect of using a solvent such as viscosity reduction, and if the amount used is large, the solvent tends to remain in the material, causing problems such as thermal cracks, and also in terms of cost. It is disadvantageous and the industrial utility value decreases. These solvents may be used alone or as a mixed solvent of two or more.

(Photopolymerization initiator)
In the curable composition of this invention, when it has photocurability, a radical photopolymerization initiator and a photocationic polymerization initiator can be suitably used without particular limitation.

Photocationic polymerization initiators include metal fluoroboron complex salts and boron trifluoride complex compounds, bis (perfluoroalkylsulfonyl) methane metal salts, bis (perfluoroalkylsulfonyl) methane metal salts, aryldiazonium compounds, group VIa Aromatic onium salts of elements, aromatic onium salts of group Va elements, dicarbonyl chelates of group IIIa to Va elements, thiopyrylium salts, VIa elements in the form of MF6 ^- anions, arylsulfonium complex salts, aromatic iodonium complex salts and aromatics Sulfonium complex salt, bis [4- (diphenylsulfonio) phenyl] sulfide-bishexafluorometal salt (for example, phosphate, arsenate, antimonate, etc.), fragrance whose anion is B (C ₆ F ₅ ) ₄ ^— One or more of an aromatic iodonium complex salt and an aromatic sulfonium complex salt are included. The

  Preferred cationic active energy ray cationic polymerization initiators include arylsulfonium complex salts, aromatic sulfonium or iodonium salts of halogen-containing complex ions, and aromatic onium salts of Group II, Group V and Group VI elements. Some of these salts are FX-512 (3M), UVR-6990 and UVR-6974 (Union Carbide), UVE-1014 and UVE-1016 (General Electric), KI-85 (Degussa) ), SP-152 and SP-172 (Asahi Denka Co., Ltd.), Sun-Aid SI-60L, SI-80L and SI-100L (Sanshin Chemical Industry Co., Ltd.), WPI113 and WPI116 (Wako Pure Chemical Industries, Ltd.), RHODORSIL PI2074 (Rhodia) As a product.

  In the case of photo radical initiators, acetophenone compounds, benzophenone compounds, acylphosphine oxide compounds, oxime ester compounds, benzoin compounds, biimidazole compounds, α-diketone compounds, titanocene compounds, polynuclear compounds Quinone compounds, xanthone compounds, thioxanthone compounds, triazine compounds, ketal compounds, azo compounds, peroxides, 2,3-dialkyldione compounds, disulfide compounds, thiuram compounds, fluoroamine compounds, etc. Can be used.

  Specific examples of acetophenone compounds include 1- (4-dodecylphenyl) -2-hydroxy-2-methylpropan-1-one, 2,2-dimethoxy-2-phenylacetophenone, 2-hydroxy-2-methyl- 1-phenylpropan-1-one, 1- (4′-i-propylphenyl) -2-hydroxy-2-methylpropan-1-one, 4- (2′-hydroxyethoxy) phenyl (2-hydroxy-2) -Propyl) ketone, 2,2-dimethoxyacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1- (4'-methylthiophenyl) -2-morpholinopropan-1-one, 2-benzyl-2- Dimethylamino-1- (4′-morpholinophenyl) butan-1-one, 1-hydroxycyclohexyl phenyl ketone, 2,2 -Dimethoxy-1,2-diphenylethane-1-one, 2-hydroxy-1- [4- [4- (2-hydroxy-2-methyl-propionyl) -benzyl] phenyl] -2-methyl-propane-1 -ON etc. are mentioned.

  Specific examples of the acylphosphine oxide compound include 2,4,6-trimethylbenzoyl-diphenylphosphine oxide, bis (2,4,6-trimethylbenzoyl) -phenylphosphine oxide, and the like.

  Specific examples of oxime ester compounds include 1,2-octanedione 1- [4- (phenylthio) -2- (O-benzoyloxime)], ethanone 1- [9-ethyl-6- (2-methylbenzoyl) ) -9H-carbazol-3-yl] -1- (O-acetyloxime) and the like.

  Specific examples of the benzoin compound include benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, methyl 2-benzoylbenzoate and the like.

  Specific examples of the benzophenone compounds include benzyl dimethyl ketone, benzophenone, 4,4′-bis (dimethylamino) benzophenone, 4,4′-bis (diethylamino) benzophenone, and the like.

  Specific examples of the α-diketone compound include diacetyl, dibenzoyl, methylbenzoylformate, and the like.

  Specific examples of the biimidazole compound include 2,2′-bis (2-chlorophenyl) -4,4 ′, 5,5′-tetrakis (4-ethoxycarbonylphenyl) -1,2′-biimidazole, 2 , 2'-bis (2,4-dichlorophenyl) -4,4 ', 5,5'-tetrakis (4-ethoxycarbonylphenyl) -1,2'-biimidazole, 2,2'-bis (2,4 , 6-trichlorophenyl) -4,4 ′, 5,5′-tetrakis (4-ethoxycarbonylphenyl) -1,2′-biimidazole, 2,2′-bis (2-bromophenyl) -4,4 ', 5,5'-tetrakis (4-ethoxycarbonylphenyl) -1,2'-biimidazole, 2,2'-bis (2,4-dibromophenyl) -4,4', 5,5'-tetrakis (4-ethoxycarbonylphenyl) -1, 2'-biimidazole, 2,2'-bis (2,4,6-tribromophenyl) -4,4 ', 5,5'-tetrakis (4-ethoxycarbonylphenyl) -1,2'-biimidazole 2,2′-bis (2-chlorophenyl) -4,4 ′, 5,5′-tetraphenyl-1,2′-biimidazole, 2,2′-bis (2,4-dichlorophenyl) -4, 4 ', 5,5'-tetraphenyl-1,2'-biimidazole, 2,2'-bis (2,4,6-trichlorophenyl) -4,4', 5,5'-tetraphenyl-1 , 2′-biimidazole, 2,2′-bis (2-bromophenyl) -4,4 ′, 5,5′-tetraphenyl-1,2′-biimidazole, 2,2′-bis (2, 4-dibromophenyl) -4,4 ′, 5,5′-tetraphenyl-1,2′-biimidazole, 2,2′-bi (2,4,6-bromophenyl) -4,4 ', 5,5'-tetraphenyl-1,2'-biimidazole.

  Specific examples of the polynuclear quinone compound include anthraquinone, 2-ethylanthraquinone, 2-t-butylanthraquinone, 1,4-naphthoquinone and the like.

  Specific examples of the xanthone compound include xanthone, thioxanthone, 2-chlorothioxanthone, 2,5-diethyldioxanthone and the like.

  Specific examples of the triazine compound include 1,3,5-tris (trichloromethyl) -s-triazine, 1,3-bis (trichloromethyl) -5- (2′-chlorophenyl) -s-triazine, 1, 3-bis (trichloromethyl) -5- (4′-chlorophenyl) -s-triazine, 1,3-bis (trichloromethyl) -5- (2′-methoxyphenyl) -s-triazine, 1,3-bis (Trichloromethyl) -5- (4′-methoxyphenyl) -s-triazine, 2- (2′-furylethylidene) -4,6-bis (trichloromethyl) -s-triazine, 2- (4′-methoxy) Styryl) -4,6-bis (trichloromethyl) -s-triazine, 2- (3 ′, 4′-dimethoxystyryl) -4,6-bis (trichloromethyl) -s-triazine, 2- ( '-Methoxynaphthyl) -4,6-bis (trichloromethyl) -s-triazine, 2- (2'-bromo-4'-methylphenyl) -4,6-bis (trichloromethyl) -s-triazine, 2 -(2'-thiophenylethylidene) -4,6-bis (trichloromethyl) -s-triazine and the like.

  In particular, from the viewpoint of excellent thin film curability, 2,4,6-trimethylbenzoyl-diphenylphosphine oxide, bis (2,4,6-trimethylbenzoyl) -phenylphosphine oxide, 2-hydroxy-1- [4- [4- (2-Hydroxy-2-methyl-propionyl) -benzyl] phenyl] -2-methyl-propan-1-one, 1,2-octanedione 1- [4- (phenylthio) -2- (O-benzoyl) Oxime)], ethanone 1- [9-ethyl-6- (2-methylbenzoyl) -9H-carbazol-3-yl] -1- (O-acetyloxime) is preferred.

  In particular, from the viewpoint that the cured product is excellent in transparency, 1-hydroxycyclohexyl phenyl ketone, 2,2-dimethoxy-2-phenylacetophenone, 2-hydroxy-2-methyl-1-phenylpropan-1-one, 1- ( 4′-i-propylphenyl) -2-hydroxy-2-methylpropan-1-one, 4- (2′-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, 2,2-dimethoxyacetophenone preferable.

  These polymerization initiators may be used alone or in combination of two or more.

  The amount of the photopolymerization initiator used is preferably 0.1 to 10 parts by weight, more preferably 0.5 to 5 parts by weight with respect to 100 parts by weight of the curable composition. When the amount of the photopolymerization initiator is small, curing is insufficient, which is not preferable. When the amount of the initiator is large, storage stability in a liquid state is not preferable.

(Sensitizer)
In the curable composition of the present invention, when cured with light energy, the sensitivity of light is improved, and high wavelengths such as g-line (436 nm), h-line (405 nm), and i-line (365 nm) are called. In order to give sensitivity to light, a sensitizer can be appropriately added. These sensitizers can be used in combination with the above cationic polymerization initiator and / or radical polymerization initiator to adjust the curability. Examples of the compound to be added include anthracene compounds and thioxanthone compounds.

  Specific examples of the anthracene compound include anthracene, 2-ethyl-9,10-dimethoxyanthracene, 9,10-dimethylanthracene, 9,10-dibutoxyanthracene, 9,10-dipropoxyanthracene, and 9,10-di. Ethoxyanthracene, 1,4-dimethoxyanthracene, 9-methylanthracene, 2-ethylanthracene, 2-tert-butylanthracene, 2,6-di-tert-butylanthracene, 9,10-diphenyl-2,6-di- tert-butylanthracene and the like are mentioned. From the viewpoint of availability, anthracene, 9,10-dimethylanthracene, 9,10-dibutoxyanthracene, 9,10-dipropoxyanthracene, 9,10-diethoxyanthracene, etc. preferable.

  Anthracene is preferable from the viewpoint of excellent transparency of the cured product, and 9,10-dibutoxyanthracene, 9,10-dipropoxyanthracene, and 9,10-diethoxy from the viewpoint of excellent compatibility with the curable composition. Anthracene and the like are preferable. Specific examples of the thioxanthone series include thioxanthone, 2-chlorothioxanthone, 2,5-diethyldioxanthone and the like. These sensitizers may be used alone or in combination of two or more.

(Reactive diluent)
A reactive diluent can be appropriately added to the curable composition of the present invention in order to adjust workability, reactivity, adhesiveness, and strength of the cured product. The compound to be added can be selected according to the curing reaction mode and used without any particular limitation, and a compound having a polymerization group such as an epoxy compound, an oxetane compound, an alkoxysilane compound, or a (meth) acrylate compound is used.

  Specific examples of epoxy compounds and oxetane compounds include novolak phenol type epoxy resins, biphenyl type epoxy resins, dicyclopentadiene type epoxy resins, cyclohexyl epoxy group-containing polyorganosiloxanes (cyclic and chain), glycidyl group-containing polyorganosiloxanes ( Cyclic, chain), bisphenol F diglycidyl ether, bisphenol A diglycidyl ether, 2,2′-bis (4-glycidyloxycyclohexyl) propane, 3,4-epoxycyclohexylmethyl-3,4-epoxycyclohexanecarboxylate Vinylcyclohexene dioxide, 2- (3,4-epoxycyclohexyl) -5,5-spiro- (3,4-epoxycyclohexane) -1,3-dioxane, bis (3,4-epoxysilane) Rohexyl) adipate, 1,2-cyclopropanedicarboxylic acid bisglycidyl ester, triglycidyl isocyanurate, monoallyl diglycidyl isocyanurate, diallyl monoglycidyl isocyanurate, 1,4-bis {(3-ethyl-3-oxetanyl) methoxy } Methyl} benzene, bis {1-ethyl (3-oxetanyl)} methyl ether, 3-ethyl-3- (phenoxymethyl) oxetane, 3-ethyl-3- (2-ethylhexyloxymethyl) oxetane, etc. be able to.

  Specific examples of the alkoxysilane compound include tetramethoxy (ethoxy) silane and its condensate, methyltrimethoxy (ethoxy) silane and its condensate, dimethyldimethoxy (ethoxy) silane and its condensate.

  Specific examples of (meth) acrylate compounds include allyl (meth) acrylate, vinyl (meth) acrylate, dicyclopentenyl (meth) acrylate, dicyclopentenyloxyethyl (meth) acrylate, and (meth) acrylic acid. Modified allyl glycidyl ether (manufactured by Nagase ChemteX, trade name: Denacol acrylate DA111), urethane (meth) acrylates, epoxy (meth) acrylates, trimethylolpropane tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, Ditrimethylolpropane (meth) tetraacrylate, dipentaerythritol hexa (meth) acrylate, butanediol di (meth) acrylate, nonanediol di (meth) acrylate, polypropylene glycol System (meth) acrylate, bisphenol A di (meth) acrylate, tris (2- (meth) acryloyloxyethyl) isocyanurate, and (meth) acrylate group-containing polyorganosiloxane.

  Although various addition amounts of the reactive diluent can be set, the preferred addition amount is 1 to 50 parts by weight, and more preferably 3 to 25 parts by weight with respect to 100 parts by weight of the curable composition. If the addition amount is small, the addition effect does not appear, and if the addition amount is large, the physical properties of the cured product may be adversely affected. In addition, in order to advance the photocrosslinking reaction of these reactive diluents, when adding an epoxy or alkoxylane compound, respectively, a photocationic polymerization initiator represented by an onium salt is used, and when an acrylate compound is added. In addition, a radical photopolymerization initiator such as an acetophenone compound, a benzophenone compound, or an acyl phosphine oxide compound may be added.

(Adhesion improver)
An adhesion improver can also be added to the curable composition of the present invention. In addition to commonly used adhesives as adhesion improvers, for example, various coupling agents, epoxy compounds, oxetane compounds, phenol resins, coumarone-indene resins, rosin ester resins, terpene-phenol resins, α-methylstyrene -Vinyl toluene copolymer, polyethyl methyl styrene, aromatic polyisocyanate, etc. can be mentioned.

  An example of the coupling agent is a silane coupling agent. The silane coupling agent is not particularly limited as long as it is a compound having at least one functional group reactive with an organic group and one hydrolyzable silicon group in the molecule. The group reactive with the organic group is preferably at least one functional group selected from an epoxy group, a methacryl group, an acrylic group, an isocyanate group, an isocyanurate group, a vinyl group, and a carbamate group from the viewpoint of handling. From the viewpoints of adhesion and adhesiveness, an epoxy group, a methacryl group, and an acrylic group are particularly preferable. As the hydrolyzable silicon group, an alkoxysilyl group is preferable from the viewpoint of handleability, and a methoxysilyl group and an ethoxysilyl group are particularly preferable from the viewpoint of reactivity.

  Preferred silane coupling agents include 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropyltriethoxysilane, 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, 2- (3,4- Epoxycyclohexyl) alkoxysilanes having an epoxy functional group such as ethyltriethoxysilane: 3-methacryloxypropyltrimethoxysilane, 3-methacryloxypropyltriethoxysilane, 3-acryloxypropyltrimethoxysilane, 3-acryloxypropyl Methacrylic or acrylic groups such as triethoxysilane, methacryloxymethyltrimethoxysilane, methacryloxymethyltriethoxysilane, acryloxymethyltrimethoxysilane, acryloxymethyltriethoxysilane Alkoxysilanes which can be exemplified.

  The addition amount of the silane coupling agent can be variously set, but is preferably 0.1 to 20 parts by weight, more preferably 0.3 to 10 parts by weight, and still more preferably 0 to 100 parts by weight of the curable composition. 0.5 to 5 parts by weight. When the addition amount is small, the effect of improving the adhesiveness does not appear, and when the addition amount is large, the curability and the physical properties of the cured product may be adversely affected. Moreover, these adhesive improvement agents may be used independently and may be used together 2 or more types.

(Thermoplastic resin)
Various thermoplastic resins may be added to the curable composition for the purpose of modifying the properties. Various thermoplastic resins can be used. For example, a homopolymer of methyl methacrylate or a polymethyl methacrylate resin such as a random, block or graft polymer of methyl methacrylate and other monomers (for example, Hitachi Chemical) Optretz, etc.), acrylic resins represented by polybutyl acrylate resins such as butyl acrylate homopolymers or random, block or graft polymers of butyl acrylate and other monomers, bisphenol A, 3, A polycarbonate resin such as a polycarbonate resin containing 3,5-trimethylcyclohexylidenebisphenol or the like as a monomer structure (for example, APEC manufactured by Teijin Limited), a norbornene derivative, a vinyl monomer, or the like is copolymerized alone or copolymerized. Cycloolefin resins such as fat, norbornene derivative ring-opening metathesis polymer, or hydrogenated products thereof (for example, APEL manufactured by Mitsui Chemicals, ZEONOR, ZEONEX manufactured by Nippon Zeon, ARTON manufactured by JSR, etc.), ethylene and Olefin-maleimide resins such as maleimide copolymers (eg TI-PAS manufactured by Tosoh Corporation), bisphenols such as bisphenol A and bis (4- (2-hydroxyethoxy) phenyl) fluorene, and diols such as diethylene glycol Polyester resins such as polyester obtained by polycondensation of phthalic acids and aliphatic dicarboxylic acids such as terephthalic acid and isophthalic acid (eg O-PET manufactured by Kanebo Co., Ltd.), polyethersulfone resins, polyarylate resins, polyvinyl acetal resins, Polyethylene resin Polypropylene resins, polystyrene resins, polyamide resins, silicone resins, other like fluorine resin, not natural rubber, but the rubber-like resin is exemplified such EPDM is not limited thereto.

  The thermoplastic resin may have a crosslinkable group. Examples of the crosslinkable group in this case include an epoxy group, an amino group, a radical polymerizable unsaturated group, a carboxyl group, an isocyanate group, a hydroxyl group, and an alkoxysilyl group. From the viewpoint that the heat resistance of the obtained cured product tends to be high, it is preferable to have one or more crosslinkable groups in one molecule on average.

  Although there is no limitation in particular as a compounding quantity of a thermoplastic resin, the range of the preferable usage-amount is 5 to 50 weight% of the whole curable composition, More preferably, it is 10 to 30 weight%. If the amount added is small, the resulting cured product tends to be brittle. If the amount added is large, the heat resistance (elastic modulus at high temperature) tends to be low. A single thermoplastic resin may be used, or a plurality of thermoplastic resins may be used in combination.

(Anti-aging agent)
An aging inhibitor may be added to the curable composition of the present invention. Examples of the anti-aging agent include citric acid, phosphoric acid, sulfur-based anti-aging agent and the like in addition to the anti-aging agents generally used such as hindered phenol type. As the hindered phenol-based anti-aging agent, various types such as Irganox 1010 available from Ciba Specialty Chemicals are used. Sulfur-based antioxidants include mercaptans, mercaptan salts, sulfide carboxylic acid esters, sulfides including hindered phenol sulfides, polysulfides, dithiocarboxylates, thioureas, thiophosphates, sulfonium Examples thereof include compounds, thioaldehydes, thioketones, mercaptals, mercaptols, monothioacids, polythioacids, thioamides, and sulfoxides. Moreover, these anti-aging agents may be used independently and may be used together 2 or more types.

(UV absorber)
An ultraviolet absorber may be added to the curable composition of the present invention. Examples of the ultraviolet absorber include 2 (2′-hydroxy-3 ′, 5′-di-t-butylphenyl) benzotriazole, bis (2,2,6,6-tetramethyl-4-piperidine) sebacate and the like. Can be mentioned. Moreover, these ultraviolet absorbers may be used independently and may be used together 2 or more types.

(Other additives)
The curable composition of the present invention includes other flame retardants, flame retardant aids, surfactants, antifoaming agents, emulsifiers, leveling agents, anti-fogging agents, ion trapping agents such as antimony-bismuth, and thixotropic agents. , Storage stability improver, ozone degradation inhibitor, light stabilizer, thickener, plasticizer, reactive diluent, antioxidant, thermal stabilizer, antistatic agent, radiation blocker, nucleating agent, phosphorus-based excess An oxide decomposing agent, a lubricant, a metal deactivator, a thermal conductivity imparting agent, a physical property adjusting agent and the like can be added within a range not impairing the object and effect of the present invention.

For the thin film transistors created in the following examples and comparative examples using the method of the present invention, the electric characteristics were determined from the current transfer characteristics obtained by measuring the current transfer characteristics using a semiconductor parameter analyzer (Agilent 4156) by the following method. The calculated results are shown in Table 1.

  As can be seen from this result, it can be seen that a thin film transistor having good characteristics is obtained on the planarized resin film according to the present invention.

(Flatness)
The average surface roughness (Ra) of the film surface used when providing the thin film transistor was measured and evaluated using a laser interferometer (trade name: Zygo, manufactured by Canon).

(transparency)
The resin films obtained in Examples and Comparative Examples were measured for light transmittance (T%) at 500 nm using a spectrophotometer (manufactured by JASCO), and used as an index of transparency.

(Current transfer characteristics)
In the manufactured transistor, a source / drain current amount (Id) when a voltage of −40 V was applied to the gate electrode in a state where a voltage of −40 V was applied between the source and the drain was plotted to obtain transfer characteristics.

(Threshold voltage)
In the current transfer characteristic curve, the current Id flowing between the source / drain and the gate applied voltage Vg were calculated from the intersection between the extended line of the linear region and the Vg axis from the curve between (Id) ^1/2 and Vg.

(Hysteresis)
During the transistor repetitive operation, the threshold voltage difference was calculated as hysteresis.

(ON / OFF current ratio)
The on-state current Ion is the maximum current value in the saturation region in the current transfer characteristic curve, and the off-state current Ioff is obtained from the off-state minimum current. The ON / OFF current ratio Ion / Ioff was calculated from the ratio between the maximum current value in the on state and the minimum current value in the off state.

(Production Example 1)
A 300 mL four-necked flask was charged with 72.4 g of toluene and 72.4 g of 1,3,5,7-tetramethylcyclotetrasiloxane, and the gas phase was purged with nitrogen. The internal temperature was 105 ° C., and 10 g of triallyl isocyanurate was added. Then, a mixed solution of 10 g of toluene and 0.0063 g of a xylene solution of platinum vinylsiloxane complex (containing 3 wt% as platinum) was added dropwise. It was confirmed by ¹ H-NMR that the allyl group had disappeared, and the reaction was terminated by cooling. Solvent toluene was distilled off under reduced pressure to obtain polysiloxane compound A. ^{From the 1} H-NMR measurement, a peak derived from the SiH group is confirmed from the obtained polysiloxane compound A, and it can be seen that the polysiloxane compound has a SiH group.

  1 g of the obtained polysiloxane compound A, 0.73 g of triallyl isocyanurate, 0.0019 g of xylene solution of platinum vinylsiloxane complex (containing 3 wt% as platinum), 0.0017 g of 1-ethynylcyclohexanol, propylene glycol monomethyl ether acetate ( Solvent, PGMEA) 4.0 g was mixed to obtain curable composition 1.

(Production Reference Example 2)
A 200 mL four-necked flask was charged with 10 g of the polysiloxane compound A obtained in Synthesis Example 1 and 20 g of toluene. After the gas phase was replaced with nitrogen, the internal temperature was 105 ° C., 3.81 g of toluene, 3.81 g of vinylcyclohexene oxide. Was added dropwise. It was confirmed by ¹ H-NMR that the vinyl group had disappeared, and the reaction was terminated by cooling. Solvent toluene was distilled off under reduced pressure to obtain polysiloxane compound B. ^{From the 1} H-NMR measurement, a peak derived from an epoxy group is confirmed from the obtained polysiloxane compound B, which indicates that the polysiloxane compound has an epoxy group.

  The resulting polysiloxane compound B1 g, iodonium salt cationic polymerization initiator (BBI-102, manufactured by Midori Chemical) 0.04 g, and propylene glycol monomethyl ether acetate (solvent, PGMEA) 4.0 g were mixed to obtain a curable composition. 2.

Example 1
The curable composition 1 of Production Example 1 was applied to a 50 μm PEN film substrate 1 (Teonex, manufactured by Teijin) by spin coating under the conditions of 2000 rpm and 20 sec, and post-baked at 150 ° C. for 1 h to form a primer layer 2. A gate electrode 3 having a thickness of 500 mm aluminum (Al) is formed by a vacuum deposition film forming apparatus, and the curable composition 1 of Production Example 1 is applied thereon by spin coating under the conditions of 2000 rpm and 20 sec, at 150 ° C., The gate insulating film 4 was formed by post-baking for 1 h. Further, a pentacene organic semiconductor layer 5 is formed to a thickness of 500 mm by vapor deposition, and source / drain Au electrodes 6 and 7 having a thickness of 300 mm are formed thereon by vapor deposition using a mask having a channel length of 100 μm and a channel width of 5 mm. A thin film transistor was manufactured.

( Reference Example 2)
The thin film transistor was fabricated in the same manner as in Example 1 except that the curable composition used was changed to the curable composition 2 of Production Reference Example 2 and that a step of exposing the UV light to 150 mJ / cm ² before post-baking after coating was added. Produced.

(Comparative Example 1)
A thin film transistor was produced in the same manner as in Example 1 except that the primer layer 2 was not provided.

DESCRIPTION OF SYMBOLS 1 PEN film substrate 2 Primer layer 3 Gate electrode 4 Gate insulating film 5 Organic-semiconductor layer 6 Source electrode 7 Drain electrode

Claims (5)

The primer layer coated with curable compositions that cure by a hydrosilylation reaction is formed on the resin film, a thin film transistor which is characterized in that the curable composition is cured further applied as a gate insulating film by a hydrosilylation reaction ,
A thin transistor in which a light transmittance at 500 nm is 80% or more and a threshold voltage is −5 to 5 V in a resin film provided with a primer layer. The thin film transistor according to claim 1, wherein the curable composition is a polysiloxane compound. The curable composition has the following general formula (I)
(Wherein R ¹ represents a hydrogen atom or a monovalent organic group having 1 to 50 carbon atoms, and each R ¹ may be different or the same) and is a compound containing a structure represented by the thin film transistor according to claim 1 or 2, characterized in that. The thin film transistor according to any one of claims 1 to 3, the resin film is characterized in that it is a polyester-based material. Thin film transistor according to any one of claims 1-4, characterized by being formed using an organic semiconductor as a semiconductor layer.