KR100790634B1 - 액침노광장치, 액침노광방법 및 디바이스 제조방법 - Google Patents

액침노광장치, 액침노광방법 및 디바이스 제조방법 Download PDF

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Publication number
KR100790634B1
KR100790634B1 KR1020060024582A KR20060024582A KR100790634B1 KR 100790634 B1 KR100790634 B1 KR 100790634B1 KR 1020060024582 A KR1020060024582 A KR 1020060024582A KR 20060024582 A KR20060024582 A KR 20060024582A KR 100790634 B1 KR100790634 B1 KR 100790634B1
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KR
South Korea
Prior art keywords
liquid
temperature
liquid immersion
exposure apparatus
immersion exposure
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Expired - Fee Related
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KR1020060024582A
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English (en)
Korean (ko)
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KR20060101326A (ko
Inventor
요시노리 마키타
카오루 오기노
Original Assignee
캐논 가부시끼가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020060024582A 2005-03-18 2006-03-17 액침노광장치, 액침노광방법 및 디바이스 제조방법 Expired - Fee Related KR100790634B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005080588A JP2006261607A (ja) 2005-03-18 2005-03-18 液浸露光装置、液浸露光方法及びデバイス製造方法。
JPJP-P-2005-00080588 2005-03-18

Publications (2)

Publication Number Publication Date
KR20060101326A KR20060101326A (ko) 2006-09-22
KR100790634B1 true KR100790634B1 (ko) 2008-01-02

Family

ID=36588973

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020060024582A Expired - Fee Related KR100790634B1 (ko) 2005-03-18 2006-03-17 액침노광장치, 액침노광방법 및 디바이스 제조방법

Country Status (4)

Country Link
US (1) US20060209280A1 (https=)
EP (1) EP1703329A1 (https=)
JP (1) JP2006261607A (https=)
KR (1) KR100790634B1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004107417A1 (ja) 2003-05-28 2004-12-09 Nikon Corporation 露光方法及び露光装置、並びにデバイス製造方法
WO2006115268A1 (ja) * 2005-04-26 2006-11-02 Mitsui Chemicals, Inc. 液浸式露光用液体、液浸式露光用液体の精製方法および液浸式露光方法
US8045134B2 (en) 2006-03-13 2011-10-25 Asml Netherlands B.V. Lithographic apparatus, control system and device manufacturing method
US8004651B2 (en) 2007-01-23 2011-08-23 Nikon Corporation Liquid recovery system, immersion exposure apparatus, immersion exposing method, and device fabricating method
US7755740B2 (en) 2007-02-07 2010-07-13 Canon Kabushiki Kaisha Exposure apparatus
NL1035970A1 (nl) 2007-09-28 2009-04-03 Asml Holding Nv Lithographic Apparatus and Device Manufacturing Method.
JP2009094255A (ja) * 2007-10-05 2009-04-30 Canon Inc 液浸露光装置およびデバイス製造方法
JP2009094254A (ja) * 2007-10-05 2009-04-30 Canon Inc 液浸露光装置およびデバイス製造方法
JP2009253090A (ja) 2008-04-08 2009-10-29 Canon Inc 位置決めステージ装置、露光装置およびデバイス製造方法
JP6035105B2 (ja) * 2012-10-05 2016-11-30 株式会社Ｓｃｒｅｅｎホールディングス 画像記録装置および画像記録方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004053955A1 (ja) 2002-12-10 2004-06-24 Nikon Corporation 露光装置及びデバイス製造方法
WO2004107417A1 (ja) 2003-05-28 2004-12-09 Nikon Corporation 露光方法及び露光装置、並びにデバイス製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4346164A (en) * 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004053955A1 (ja) 2002-12-10 2004-06-24 Nikon Corporation 露光装置及びデバイス製造方法
WO2004107417A1 (ja) 2003-05-28 2004-12-09 Nikon Corporation 露光方法及び露光装置、並びにデバイス製造方法

Also Published As

Publication number Publication date
JP2006261607A (ja) 2006-09-28
KR20060101326A (ko) 2006-09-22
EP1703329A1 (en) 2006-09-20
US20060209280A1 (en) 2006-09-21

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