KR100784914B1 - 다단계 변형이 가능한 이상분리 비정질 합금 - Google Patents
다단계 변형이 가능한 이상분리 비정질 합금 Download PDFInfo
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- KR100784914B1 KR100784914B1 KR1020060039293A KR20060039293A KR100784914B1 KR 100784914 B1 KR100784914 B1 KR 100784914B1 KR 1020060039293 A KR1020060039293 A KR 1020060039293A KR 20060039293 A KR20060039293 A KR 20060039293A KR 100784914 B1 KR100784914 B1 KR 100784914B1
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- 239000000956 alloy Substances 0.000 title abstract description 61
- 229910045601 alloy Inorganic materials 0.000 title abstract description 60
- 239000005300 metallic glass Substances 0.000 title description 2
- 229910000808 amorphous metal alloy Inorganic materials 0.000 claims abstract description 47
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 16
- 229910052688 Gadolinium Inorganic materials 0.000 claims abstract description 15
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 14
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 11
- 229910052790 beryllium Inorganic materials 0.000 claims abstract description 8
- 229910052796 boron Inorganic materials 0.000 claims abstract 11
- 238000000034 method Methods 0.000 claims description 15
- 229910052727 yttrium Inorganic materials 0.000 claims description 11
- 238000005191 phase separation Methods 0.000 claims description 10
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 229910052718 tin Inorganic materials 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 230000002051 biphasic effect Effects 0.000 claims description 3
- 239000010949 copper Substances 0.000 abstract description 71
- 238000002425 crystallisation Methods 0.000 abstract description 45
- 230000008025 crystallization Effects 0.000 abstract description 45
- 239000013526 supercooled liquid Substances 0.000 abstract description 19
- 238000000926 separation method Methods 0.000 abstract description 18
- 230000002159 abnormal effect Effects 0.000 abstract description 17
- 229910052802 copper Inorganic materials 0.000 abstract description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 13
- 238000007711 solidification Methods 0.000 abstract description 7
- 230000008023 solidification Effects 0.000 abstract description 7
- 239000000470 constituent Substances 0.000 abstract description 4
- 230000006399 behavior Effects 0.000 description 41
- 239000012071 phase Substances 0.000 description 27
- 230000000052 comparative effect Effects 0.000 description 25
- 239000000203 mixture Substances 0.000 description 22
- 239000000463 material Substances 0.000 description 15
- 238000004455 differential thermal analysis Methods 0.000 description 13
- 238000010438 heat treatment Methods 0.000 description 12
- 239000007788 liquid Substances 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 9
- 238000002156 mixing Methods 0.000 description 9
- 239000002114 nanocomposite Substances 0.000 description 9
- 238000007709 nanocrystallization Methods 0.000 description 8
- 230000008859 change Effects 0.000 description 7
- 238000001816 cooling Methods 0.000 description 7
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 239000011159 matrix material Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 229910000952 Be alloy Inorganic materials 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 6
- 238000005266 casting Methods 0.000 description 6
- 230000009477 glass transition Effects 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- 239000000523 sample Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000005280 amorphization Methods 0.000 description 4
- 239000012300 argon atmosphere Substances 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- 238000002074 melt spinning Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 229910017985 Cu—Zr Inorganic materials 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000005345 coagulation Methods 0.000 description 3
- 230000015271 coagulation Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000004627 transmission electron microscopy Methods 0.000 description 3
- 229910018138 Al-Y Inorganic materials 0.000 description 2
- 229910000748 Gd alloy Inorganic materials 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 239000012770 industrial material Substances 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000007712 rapid solidification Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- 229910018185 Al—Co Inorganic materials 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910017532 Cu-Be Inorganic materials 0.000 description 1
- 229910002482 Cu–Ni Inorganic materials 0.000 description 1
- 229910017770 Cu—Ag Inorganic materials 0.000 description 1
- 229910017945 Cu—Ti Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910000946 Y alloy Inorganic materials 0.000 description 1
- RZJQYRCNDBMIAG-UHFFFAOYSA-N [Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Zn].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn] Chemical class [Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Zn].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn] RZJQYRCNDBMIAG-UHFFFAOYSA-N 0.000 description 1
- 230000001594 aberrant effect Effects 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 230000002547 anomalous effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007496 glass forming Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000003303 reheating Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004781 supercooling Methods 0.000 description 1
- 238000002076 thermal analysis method Methods 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C45/00—Amorphous alloys
- C22C45/001—Amorphous alloys with Cu as the major constituent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C30/00—Alloys containing less than 50% by weight of each constituent
- C22C30/02—Alloys containing less than 50% by weight of each constituent containing copper
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C30/00—Alloys containing less than 50% by weight of each constituent
- C22C30/04—Alloys containing less than 50% by weight of each constituent containing tin or lead
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Continuous Casting (AREA)
Abstract
Description
구분 | 합금조성(at%) | Tg1 | Tx1 | Tg2 | Tx2 | 제조/형태 |
실시예 1 | Cu46Zr22Al7Y25 | 565 | 587 | 710 | 738 | M/DA |
실시예 2 | Cu46Zr27Al7Gd20 | 505 | 536 | 679 | 737 | M/DA |
실시예 3 | Cu50Hf22.5Al7.5Y20 | 585 | 610 | 779 | 824 | M/DA |
실시예 4 | Cu50Hf17.5Al7.5Gd25 | 533 | 563 | 723 | 756 | M/DA |
실시예 5 | Cu50Zr20Ag10Gd20 | 592 | 607 | 665 | 719 | M/DA |
실시예 6 | Cu50Zr20Be10Y20 | 549 | 561 | 656 | 705 | M/DA |
실시예 7 | Cu50Hf12.5Ti15Y12.5 | 658 | 683 | 830 | 862 | M/DA |
실시예 8 | Cu50Hf12.5Ti15Gd12.5 | 615 | 649 | 858 | 895 | M/DA |
실시예 9 | Cu55Hf22.5Y22.5 | 521 | 544 | 657 | 702 | M/DA |
실시예 10 | Cu50Zr25Y25 | 528 | 548 | 621 | 645 | M/DA |
실시예 11 | Cu47.5Zr40Be12.5 | 698 | 756 | 826 | 878 | I/DA |
실시예 12 | Cu47Ti34Y11Ni8 | 598 | 631 | 739 | 764 | M/DA |
실시예 13 | Cu47Ti33Y11Ni6Sn2Si1 | 657 | 691 | 776 | 798 | I/DA |
실시예 14 | Cu40Ti25Y25Zr5Ni5 | 508 | 538 | 720 | 748 | M/DA |
비교예 1 | Cu50Zr50 | - | - | 677 | 721 | M/SA |
비교예 2 | Cu46Zr47Al7 | - | - | 715 | 771 | M/SA |
비교예 3 | Cu50Hf40Al7.5Y2.5 | 523 | 553 | - | - | M/SA |
비교예 4 | Cu10Zr65Ag7.5Al7.5Ni10 | - | - | 664 | 713 | M/SA |
비교예 5 | Cu50Gd42.5Al7.5 | - | - | 760 | 855 | M/SA |
비교예 6 | Cu20Zr10Y65Al5 | 621 | 645 | - | - | M/SA |
비교예 7 | Cu46Zr25Al7Ce22 | - | - | - | 670 | M/Comp. |
비교예 8 | Cu55Hf22.5Ce22.5 | - | - | - | 684 | M/Comp. |
비교예 9 | Cu60Hf20Nd20 | - | - | 750 | 785 | M/SA |
비교예 10 | Cu47Ti34Zr11Ni8 | - | - | 682 | 731 | M/SA |
비교예 11 | Cu40Zr15Y15Sn30 | - | - | - | - | M/Cryst. |
Claims (10)
- 일반식 Cu100-a-b(A)a(B)b 으로 표현되며,여기서, 상기 A는 Zr, Hf 및 Ti 중 적어도 1종이고, 상기 B는 Be, Ag, Y 및 Gd 중 적어도 1종이며, a와 b는 원자량 %로 각각 10≤a≤60, 10≤b≤60, a+b≤70의 조건을 만족하는 것을 특징으로 하는 다단계 변형이 가능한 이상분리 비정질 합금.
- 일반식 Cu100-a-b(A)a(B)b(C)c 으로 표현되며,여기서, 상기 A는 Zr, Hf 및 Ti 중 적어도 1종이고, 상기 B는 Y 및 Gd 중 적어도 1종이며, 상기 C는 Al, Ni, Si 및 Sn 중 적어도 1종이며, a, b 및 c는 원자량 %로 각각 10≤a≤60, 10≤b≤60, 0<c≤20, a+b+c≤70의 조건을 만족하는 것을 특징으로 하는 다단계 변형이 가능한 이상분리 비정질 합금.
- 제1항에 있어서, 상기 A는 Zr이고, 상기 B는 Be인 것을 특징으로 하는 다단계 변형이 가능한 이상분리 비정질 합금.
- 제1항 또는 제2항에 있어서, 상기 A는 Zr이고, 상기 B는 Y인 것을 특징으로 하는 다단계 변형이 가능한 이상분리 비정질 합금.
- 제1항 또는 제2항에 있어서, 상기 A는 Hf이고, 상기 B는 Y인 것을 특징으로 하는 다단계 변형이 가능한 이상분리 비정질 합금.
- 제2항에 있어서, 상기 A는 Zr이고, 상기 B는 Y이며, 상기 C는 Al인 것을 특징으로 하는 다단계 변형이 가능한 이상분리 비정질 합금.
- 제2항에 있어서, 상기 A는 Hf이고, 상기 B는 Y이며, 상기 C는 Al인 것을 특징으로 하는 다단계 변형이 가능한 이상분리 비정질 합금.
- 제2항에 있어서, 상기 A는 Zr이고, 상기 B는 Gd이며, 상기 C는 Al인 것을 특징으로 하는 다단계 변형이 가능한 이상분리 비정질 합금.
- 제2항에 있어서, 상기 A는 Hf이고, 상기 B는 Gd이며, 상기 C는 Al인 것을 특징으로 하는 다단계 변형이 가능한 이상분리 비정질 합금.
- 제2항에 있어서, 상기 A는 Ti이고, 상기 B는 Y이며, 상기 C는 Ni, Sn 및 Si 중 적어도 1종인 것을 특징으로 하는 다단계 변형이 가능한 이상분리 비정질 합금.
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KR1020060039293A KR100784914B1 (ko) | 2006-05-01 | 2006-05-01 | 다단계 변형이 가능한 이상분리 비정질 합금 |
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KR1020060039293A KR100784914B1 (ko) | 2006-05-01 | 2006-05-01 | 다단계 변형이 가능한 이상분리 비정질 합금 |
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KR20070106887A KR20070106887A (ko) | 2007-11-06 |
KR100784914B1 true KR100784914B1 (ko) | 2007-12-11 |
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Families Citing this family (13)
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JP4102280B2 (ja) | 2002-10-14 | 2008-06-18 | 三星電子株式会社 | スピン分極電子を用いた磁性媒体及び磁性媒体への情報記録装置及び記録方法 |
US9984787B2 (en) | 2009-11-11 | 2018-05-29 | Samsung Electronics Co., Ltd. | Conductive paste and solar cell |
US9947809B2 (en) | 2009-11-11 | 2018-04-17 | Samsung Electronics Co., Ltd. | Conductive paste and electronic device and solar cell including an electrode formed using the conductive paste |
KR101741683B1 (ko) | 2010-08-05 | 2017-05-31 | 삼성전자주식회사 | 도전성 페이스트, 상기 도전성 페이스트를 사용하여 형성된 전극을 포함하는 전자 소자 및 태양 전지 |
US8668847B2 (en) | 2010-08-13 | 2014-03-11 | Samsung Electronics Co., Ltd. | Conductive paste and electronic device and solar cell including an electrode formed using the conductive paste |
US8987586B2 (en) | 2010-08-13 | 2015-03-24 | Samsung Electronics Co., Ltd. | Conductive paste and electronic device and solar cell including an electrode formed using the conductive paste |
US8974703B2 (en) | 2010-10-27 | 2015-03-10 | Samsung Electronics Co., Ltd. | Conductive paste and electronic device and solar cell including an electrode formed using the same |
KR101960464B1 (ko) * | 2011-01-12 | 2019-03-21 | 삼성전자주식회사 | 도전성 페이스트, 상기 도전성 페이스트를 사용하여 형성된 전극을 포함하는 전자 소자 및 태양 전지 |
US9105370B2 (en) | 2011-01-12 | 2015-08-11 | Samsung Electronics Co., Ltd. | Conductive paste, and electronic device and solar cell including an electrode formed using the same |
US8940195B2 (en) | 2011-01-13 | 2015-01-27 | Samsung Electronics Co., Ltd. | Conductive paste, and electronic device and solar cell including an electrode formed using the same |
KR101814014B1 (ko) | 2011-03-25 | 2018-01-03 | 삼성전자주식회사 | 도전성 페이스트, 상기 도전성 페이스트를 사용하여 형성된 전극을 포함하는 전자 소자 및 태양 전지 |
KR101985929B1 (ko) | 2011-12-09 | 2019-06-05 | 삼성전자주식회사 | 도전성 페이스트, 상기 도전성 페이스트를 사용하여 형성된 전극을 포함하는 전자 소자 및 태양 전지 |
CN113061778B (zh) * | 2021-02-07 | 2022-08-09 | 中国科学院金属研究所 | 一种原位内生非晶颗粒增强铜合金材料 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0920968A (ja) * | 1995-06-30 | 1997-01-21 | Res Inst Electric Magnetic Alloys | Cu基非磁性金属ガラス合金およびその製造法ならびに弾性作動体 |
JP2002256401A (ja) | 2000-12-27 | 2002-09-11 | Japan Science & Technology Corp | Cu基非晶質合金 |
KR20050000246A (ko) * | 2003-06-23 | 2005-01-03 | 학교법인연세대학교 | 구리계 비정질 합금 조성물 |
KR20050096258A (ko) * | 2004-03-29 | 2005-10-05 | 한국과학기술연구원 | 구리계 비정질 합금 조성물 |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0920968A (ja) * | 1995-06-30 | 1997-01-21 | Res Inst Electric Magnetic Alloys | Cu基非磁性金属ガラス合金およびその製造法ならびに弾性作動体 |
JP2002256401A (ja) | 2000-12-27 | 2002-09-11 | Japan Science & Technology Corp | Cu基非晶質合金 |
KR20050000246A (ko) * | 2003-06-23 | 2005-01-03 | 학교법인연세대학교 | 구리계 비정질 합금 조성물 |
KR20050096258A (ko) * | 2004-03-29 | 2005-10-05 | 한국과학기술연구원 | 구리계 비정질 합금 조성물 |
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