KR100782939B1 - 노광용 마스크의 세정기 및 마스크 불량제거방법 - Google Patents
노광용 마스크의 세정기 및 마스크 불량제거방법 Download PDFInfo
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- KR100782939B1 KR100782939B1 KR1020010088579A KR20010088579A KR100782939B1 KR 100782939 B1 KR100782939 B1 KR 100782939B1 KR 1020010088579 A KR1020010088579 A KR 1020010088579A KR 20010088579 A KR20010088579 A KR 20010088579A KR 100782939 B1 KR100782939 B1 KR 100782939B1
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- Prior art keywords
- mask
- gas
- ionizer
- cleaner
- defect
- Prior art date
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- 230000007547 defect Effects 0.000 title claims abstract description 32
- 238000000034 method Methods 0.000 title claims abstract description 30
- 238000004140 cleaning Methods 0.000 claims abstract description 8
- 238000007689 inspection Methods 0.000 claims abstract description 5
- 230000002950 deficient Effects 0.000 claims abstract description 4
- 239000007789 gas Substances 0.000 claims description 31
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 2
- 230000008569 process Effects 0.000 description 11
- 239000000758 substrate Substances 0.000 description 7
- 239000010419 fine particle Substances 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000005611 electricity Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Cleaning In General (AREA)
Abstract
Description
Claims (11)
- 기체공급부와;상기 기체공급부에서 공급된 기체를 가압하는 가압용 펌프와;상기 가압용 펌프를 통한 기체가 통과하는 이오나이저(ionizer)와;상기 이오나이저를 통한 기체가 마스크로 분사되는 분출구를 포함하는 마스크세정기
- 제 1항에 있어서,상기 가압용펌프가 특정시각으로부터 일정시간후에 작동되도록 상기 가압용펌프의 작동을 제어하기 위한 타이머를 더욱 포함하는 마스크세정기
- 제 2 항에 있어서,상기 특정시각은 마스크가 마스크카세트로부터 언로딩되는 시각이고, 일정시간은 13 내지 15 초인 마스크세정기
- 제 1 항에 있어서,상기 분출구의 위치에 마스크의 존재여부를 감지하여 가압펌프에 신호를 전달하여 작동을 멈출 수 있는 센서를 더욱 포함하는 마스크세정기.
- 제 2 항에 있어서,상기 기체공급부에서 공급되는 기체는 질소인 마스크세정기
- 제 1 항에 있어서,상기 가압펌프의 전 또는 후에 공급기체의 불순물을 제거하기 위한 필터를 더욱 포함하는 마스크 세정기.
- 제 1 항에 있어서,상기 분출구의 분출방향이 상기 마스크의 표면과 이루는 각도는 45도 내지 60도인 마스크세정기
- 마스크를 마스크카세트에서 언로딩하여 이송하는 단계와;상기 이송된 마스크에 이오나이저를 통과한 가압기체를 분출하여 세정하는 단계와;상기 세정된 마스크를 이용하여 노광하는 단계;상기 노광된 상태를 검사하여 마스크불량여부를 판단하는 단계;상기 마스크에 불량이 있는 경우, 마스크검사대에 로딩하여 마스크불량을 제거하는 단계를 포함하는 마스크 불량제거방법
- 제 8 항에 있어서,상기 마스크에 가압된 기체를 분출하는 시각은 상기 마스크카세트로부터 언로딩시각으로부터 13 내지 15초 후인 마스크 불량제거방법
- 제 8 항에 있어서,상기 가압되어 분출되는 기체는 질소인 마스크 불량제거방법
- 제 8 항에 있어서,상기 마스크에 가압기체를 분출하는 각도는 상기 마스크의 이송방향에 대하여 45 내지 60도인 마스크 불량제거방법
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KR1020010088579A KR100782939B1 (ko) | 2001-12-29 | 2001-12-29 | 노광용 마스크의 세정기 및 마스크 불량제거방법 |
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KR1020010088579A KR100782939B1 (ko) | 2001-12-29 | 2001-12-29 | 노광용 마스크의 세정기 및 마스크 불량제거방법 |
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KR20030058187A KR20030058187A (ko) | 2003-07-07 |
KR100782939B1 true KR100782939B1 (ko) | 2007-12-07 |
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KR1020010088579A KR100782939B1 (ko) | 2001-12-29 | 2001-12-29 | 노광용 마스크의 세정기 및 마스크 불량제거방법 |
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Families Citing this family (1)
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CN111158219A (zh) * | 2020-01-16 | 2020-05-15 | 上海御微半导体技术有限公司 | 一种掩膜板缺陷检测和颗粒去除的装置及方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56110940A (en) * | 1980-01-25 | 1981-09-02 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Method for developing and rinsing photoresist |
JPH02278262A (ja) * | 1989-04-20 | 1990-11-14 | Matsushita Electron Corp | フォトマスクの洗浄装置 |
KR19990058733A (ko) * | 1997-12-30 | 1999-07-15 | 구본준 | 노광장비의 레티클 세정장치 |
KR20000016003U (ko) * | 1999-01-21 | 2000-08-16 | 김영환 | 레티클 체인저의 레티클용 이물제거장치 |
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2001
- 2001-12-29 KR KR1020010088579A patent/KR100782939B1/ko active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56110940A (en) * | 1980-01-25 | 1981-09-02 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Method for developing and rinsing photoresist |
JPH02278262A (ja) * | 1989-04-20 | 1990-11-14 | Matsushita Electron Corp | フォトマスクの洗浄装置 |
KR19990058733A (ko) * | 1997-12-30 | 1999-07-15 | 구본준 | 노광장비의 레티클 세정장치 |
KR20000016003U (ko) * | 1999-01-21 | 2000-08-16 | 김영환 | 레티클 체인저의 레티클용 이물제거장치 |
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