KR100775078B1 - Flip Chip Emitting Diode with dilectic reflector - Google Patents

Flip Chip Emitting Diode with dilectic reflector Download PDF

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KR100775078B1
KR100775078B1 KR1020060025342A KR20060025342A KR100775078B1 KR 100775078 B1 KR100775078 B1 KR 100775078B1 KR 1020060025342 A KR1020060025342 A KR 1020060025342A KR 20060025342 A KR20060025342 A KR 20060025342A KR 100775078 B1 KR100775078 B1 KR 100775078B1
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light emitting
flip chip
emitting device
reflective film
insulator
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KR20070095089A (en
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김상묵
이상헌
전성란
김광철
이승재
김윤석
백종협
유영문
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한국광기술원
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    • E—FIXED CONSTRUCTIONS
    • E01—CONSTRUCTION OF ROADS, RAILWAYS, OR BRIDGES
    • E01D—CONSTRUCTION OF BRIDGES, ELEVATED ROADWAYS OR VIADUCTS; ASSEMBLY OF BRIDGES
    • E01D19/00—Structural or constructional details of bridges
    • E01D19/04—Bearings; Hinges
    • E01D19/041—Elastomeric bearings
    • E—FIXED CONSTRUCTIONS
    • E01—CONSTRUCTION OF ROADS, RAILWAYS, OR BRIDGES
    • E01D—CONSTRUCTION OF BRIDGES, ELEVATED ROADWAYS OR VIADUCTS; ASSEMBLY OF BRIDGES
    • E01D22/00—Methods or apparatus for repairing or strengthening existing bridges ; Methods or apparatus for dismantling bridges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

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Abstract

본 발명은 플립칩 발광소자에 대한 것으로 특히 고반사층을 형성하여 발광손실을 최소화하는 동시에 우수한 정전기방전(ESD) 특성을 갖는 플립칩형 질화물 반도체 발광소자에 대한 것이다. 본 발명의 플립칩 구조를 형성하는 발광소자는 활성층에서 방출되는 빛을 상부면으로 모두 반사시키기 위하여 도핑층 하부에 절연체 반사막을 포함하는 것을 특징으로 한다. 본 발명에 따르면, 절연체 반사막을 사용함으로써 원하지 않는 방향으로 손실되는 광을 줄여 발광 효율을 높일 수 있으며 절연의 특성을 이용하여 보호막으로도 사용이 가능하다. BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a flip chip light emitting device, and in particular, to a flip chip nitride semiconductor light emitting device having a high reflection layer to minimize light emission loss and having excellent electrostatic discharge (ESD) characteristics. The light emitting device forming the flip chip structure of the present invention is characterized by including an insulator reflective film under the doping layer to reflect all the light emitted from the active layer to the upper surface. According to the present invention, by using the insulator reflecting film can reduce the light lost in the undesired direction to increase the luminous efficiency and can also be used as a protective film using the characteristics of the insulation.

플립칩, 발광소자, 질화물 Flip chip, light emitting element, nitride

Description

절연체 반사면을 구비하는 플립칩 발광소자{Flip Chip Emitting Diode with dilectic reflector}Flip chip light emitting device having an insulator reflecting surface {Flip Chip Emitting Diode with dilectic reflector}

도 1은 일반적인 플립칩형 질화물계 발광다이오드 구조를 개략적으로 나타낸 도면1 is a schematic view showing a typical flip chip type nitride-based light emitting diode structure

도 2는 본 발명의 실시예에 따른 질화물계 반도체 발광 소자의 구조를 개략적으로 나타낸 도면2 is a view schematically showing the structure of a nitride-based semiconductor light emitting device according to an embodiment of the present invention

도 3은 본 발명의 실시예중 범프를 이용하여 형성된 플립칩형 질화물계 반도체 발광 소자를 나타낸 도면3 is a view showing a flip chip type nitride-based semiconductor light emitting device formed using bumps according to an embodiment of the present invention.

{도면의 주요 부분의 부호에 대한 설명}{Description of Signs of Major Parts of Drawings}

101 : 기판 102 : 솔더101: substrate 102: solder

105 : P형 도핑층 106 : 활성층105: P type doping layer 106: active layer

107 : N형 도핑층 108 : 투명기판107: N-type doping layer 108: transparent substrate

201 : 전류 확산층 202 : 절연체 반사막201: current diffusion layer 202: insulator reflective film

301 : 언더범프금속301: Under bump metal

본 발명은 플립칩 발광소자에 대한 것으로 특히 고반사층을 형성하여 발광손실을 최소화하는 동시에 우수한 정전기방전(ESD) 특성을 갖는 플립칩형 질화물 반도체 발광소자에 대한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a flip chip light emitting device, and in particular, to a flip chip nitride semiconductor light emitting device having a high reflection layer to minimize light emission loss and having excellent electrostatic discharge (ESD) characteristics.

도 1은 종래 플립칩형 발광소자의 단면도를 나타낸 것이다.1 is a cross-sectional view of a conventional flip chip type light emitting device.

상기 플립칩형 발광소자는 기판(101), 솔더(102), 금속(103), 금속 반사막(104), P형 도핑층(105), 활성층(106), N형 도핑층(107) 및 투명기판(108)을 포함한다.The flip chip type light emitting device includes a substrate 101, a solder 102, a metal 103, a metal reflective film 104, a P-type doped layer 105, an active layer 106, an N-type doped layer 107, and a transparent substrate. 108.

도 1을 참조하면, 종래의 플립칩형 질화물계 발광소자의 경우는 금속(104) 반사막을 사용한다. 일반적으로 리플렉트 금속으로 사용되는 Ag는 p형 질화물 반도체층과 밀착력이 매우 낮아 리플렉트 금속이 떨어지는 불량이 발생하고 열적 불안정성으로 인해 안정적인 접촉저항을 확보하기 어려운 문제점이 있다. Ag 이외에 사용할 수 있는 다른 금속으로는 Al, Ni, Ti, Pt등이 있으나 이는 Ag에 비해 반사 효율이 떨어진다. Referring to FIG. 1, in the case of a conventional flip chip type nitride light emitting device, a metal 104 reflecting film is used. In general, Ag used as a reflecting metal has a very low adhesion force with a p-type nitride semiconductor layer, which causes a problem in which the reflecting metal falls, and it is difficult to secure stable contact resistance due to thermal instability. Other metals that can be used in addition to Ag include Al, Ni, Ti, Pt, etc., but the reflection efficiency is lower than that of Ag.

본 발명은 상기한 종래 기술의 문제점을 해결하기 위한 것으로, 그 목적은 절연체 반사막의 고반사율 특성을 이용하여 발광 손실을 최소화할 뿐만 아니라, 그 절연 특성으로 ESD 특성이 크게 개선된 질화물 반도체 발광 소자를 제공하는 데 있다.The present invention is to solve the above problems of the prior art, the object of which is to minimize the light emission loss by using the high reflectance characteristics of the insulator reflective film, as well as to provide a nitride semiconductor light emitting device that greatly improved the ESD characteristics by the insulating properties To provide.

상기와 같은 목적을 달성하기 위하여 본 발명의 플립칩 구조를 형성하는 발광소자는 활성층에서 방출되는 빛을 상부면으로 모두 반사시키기 위하여 도핑층 하부에 절연체 반사막을 포함하는 것을 특징으로 한다.In order to achieve the above object, the light emitting device forming the flip chip structure of the present invention is characterized by including an insulator reflective film under the doping layer to reflect all the light emitted from the active layer to the upper surface.

본 발명에서 상기 절연체 반사막은 n형 또는 p형 도핑층 하부에 형성되는 것이 바람직하다.In the present invention, the insulator reflective film is preferably formed below the n-type or p-type doping layer.

본 발명에서 상기 절연체 반사막은 SiOx, SixNy, HfO2, ZrO2 중에서 적어도 하나 이상을 포함하는 것이 바람직하다.In the present invention, the insulator reflective film preferably contains at least one of SiO x , Si x N y , HfO 2 , ZrO 2 .

본 발명에서 상기 절연체 반사막은 2개 이상의 층이 적층되는 것이 바람직하다.In the present invention, it is preferable that two or more layers are laminated in the insulator reflective film.

본 발명에서 상기 절연체 반사막과 상기 도핑층 사이에는 상기 도핑층 전면에 전류를 공급하기 위한 전류확산층을 포함하는 것이 바람직하다.In the present invention, it is preferable that a current spreading layer is provided between the insulator reflective film and the doped layer to supply current to the entire surface of the doped layer.

본 발명에서 상기 절연체 반사막 사이사이에는 상기 도핑층 전면에 전류를 공급하기 위한 복수개의 범프가 형성되는 것이 바람직하다.In the present invention, it is preferable that a plurality of bumps are formed between the insulator reflective films to supply current to the entire surface of the doped layer.

본 발명에서 상기 절연체 반사막은 측면에도 형성되어 측면에 발산되는 빛을 반사하는 것이 바람직하다.In the present invention, the insulator reflective film is also formed on the side surface to reflect the light emitted from the side surface.

이하, 본 발명의 바람직한 실시예를 첨부한 도면을 참조하여 설명하기로 한다. 하기의 각 도면의 구성 요소들에 참조 부호를 부가함에 있어서, 동일한 구성 요소들에 한해서는 비록 다른 도면상에 표시되더라도 가능한 한 동일한 부호를 가지도록 하며, 본 발명의 요지를 불필요하게 흐릴 수 있다고 판단되는 공지 기능 및 구성에 대한 상세한 설명은 생략한다.Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. In adding reference numerals to components of the following drawings, it is determined that the same components have the same reference numerals as much as possible even if displayed on different drawings, and it is determined that they may unnecessarily obscure the subject matter of the present invention. Detailed descriptions of well-known functions and configurations will be omitted.

도 2는 본 발명의 일 실시예에 따른 질화물계 반도체 발광소자의 단면도이다.2 is a cross-sectional view of a nitride-based semiconductor light emitting device according to an embodiment of the present invention.

상기 실시예에서, 질화물계 반도체 발광소자는 기판(101), 범프(102), 금속(103), P형 도핑층(105), 활성층(106), N형 도핑층(107), 투명기판(108), 전류확산층(201) 및 절연체 반사막(202)을 포함한다.In the above embodiment, the nitride-based semiconductor light emitting device includes a substrate 101, a bump 102, a metal 103, a P-type doped layer 105, an active layer 106, an N-type doped layer 107, a transparent substrate ( 108, a current spreading layer 201, and an insulator reflective film 202.

상기 실시예는, 질화물계 반도체 발광소자에 전류확산층(201) 및 절연체 반사막(202)이 형성되는 위치를 개략적으로 나타낸 것이다.In the above embodiment, the current diffusion layer 201 and the insulator reflective film 202 are formed in the nitride semiconductor light emitting device.

도 2를 참조하면, 기판(101) 상부에 범프(102)가 형성되고, 상기 범프(102) 각각에는 전류의 공급을 위한 P-금속(우측 103) 및 N-금속(좌측 103)이 형성된다. 상기 P-금속(우측 103) 상부에는 P형 도핑층(105)이 형성되고, 상기 N-금속(좌측 103) 상부에는 N형 도핑층(107)이 형성된다. 상기 P형 도핑층(105) 및 N형 도핑층(107)의 사이에는 활성층(106)이 형성된다. Referring to FIG. 2, bumps 102 are formed on the substrate 101, and P-metals (right 103) and N-metals (left 103) are formed on each of the bumps 102 to supply current. . The P-type doping layer 105 is formed on the P-metal (right 103), and the N-type doping layer 107 is formed on the N-metal (left 103). An active layer 106 is formed between the P-type doping layer 105 and the N-type doping layer 107.

상기 N형 도핑층(107)의 일측은 길게 뻗어 나와 상기 N-금속(좌측 103)과 연 결된다. 상기 N형 도핑층(107) 상부에는 투명기판(108)이 적층된다. One side of the N-type doped layer 107 extends long and is connected to the N-metal (left 103). The transparent substrate 108 is stacked on the N-type doped layer 107.

상기 P형 도핑층(105) 하부에는 전류확산층(201)이 형성되고, 상기 전류확산층(201) 하부에는 절연체 반사막(202)이 형성된다. 상기 절연체 반사막(202)은 상기 범프(102)가 형성된 부분을 제외한 모든 면을 감싸는 형태로 형성되는 것이 바람직하다. 절연체 반사막(202)을 발광영역 전면에 형성해 반사막 효과를 보고자 하는 경우로, 소자의 전류확산 효과를 높이기 위하여 절연체 반사막(202) 아래에 얇은 전류 확산층(201)을 사용하는 것이 바람직하다.A current diffusion layer 201 is formed below the P-type doping layer 105, and an insulator reflective film 202 is formed below the current diffusion layer 201. The insulator reflective film 202 may be formed to surround all surfaces except the portion where the bump 102 is formed. In the case where the insulator reflecting film 202 is formed on the entire light emitting area to see the reflecting film effect, it is preferable to use a thin current spreading layer 201 under the insulator reflecting film 202 to increase the current diffusion effect of the device.

상기 절연체 반사막(202)은 제1굴절율을 갖는 제1절연체막과 제1굴절률보다 큰 제2굴절률을 갖는 제2절연체막이 교대로 적층되어 이루어지는 것이 바람직하다.The insulator reflective film 202 is preferably formed by alternately stacking a first insulator film having a first refractive index and a second insulator film having a second refractive index larger than the first refractive index.

상기 절연체 반사막(202)은 Si, Zr, Hf, Ti 및 Al로 구성된 그룹으로부터 선택되는 1개 이상의 층으로 형성된다. 또한, 본 발명에 따른 발광소자에서는 높은 반사율을 갖는 절연체 반사막(202)을 발광부의 밑 부분뿐만 아니라 소자 측면에까지 형성시킴으로써, 원하는 방향으로 향하지 않아 실질적으로 소멸되는 광을 최소화하여 발광효율을 극대화할 수 있으며 절연체 반사막(202)에 의하여 소자의 측면이 보호되므로 ESD 특성을 향상시켜 높은 소자의 신뢰성을 기대할 수 있다.The insulator reflective film 202 is formed of one or more layers selected from the group consisting of Si, Zr, Hf, Ti, and Al. In addition, in the light emitting device according to the present invention, the insulator reflective film 202 having a high reflectance is formed not only at the bottom of the light emitting part but also at the side of the device, thereby maximizing the light emission efficiency by minimizing the light that does not go in a desired direction. In addition, since the side surface of the device is protected by the insulator reflective film 202, it is possible to expect high reliability of the device by improving ESD characteristics.

도 3은 본 발명의 다른 실시예에 따른 질화물계 반도체 발광소자의 단면도이다.3 is a cross-sectional view of a nitride-based semiconductor light emitting device according to another embodiment of the present invention.

상기 실시예에서, 질화물계 반도체 발광소자는 기판(101), 범프(102), P형 도핑층(105), 활성층(106), N형 도핑층(107), 투명기판(108) 및 절연체 반사막(202)을 포함한다.In the above embodiment, the nitride-based semiconductor light emitting device includes a substrate 101, a bump 102, a P-type doped layer 105, an active layer 106, an N-type doped layer 107, a transparent substrate 108, and an insulator reflective film. 202.

상기 실시예는, 다수의 범프(102)를 구비한 반도체 발광소자를 개략적으로 나타낸다.The above embodiment schematically shows a semiconductor light emitting device having a plurality of bumps 102.

도 3에 도시된 반도체 발광소자는 도 2에 도시된 반도체 발광소자의 구조와 유사하나 전류 확산층이 존재하지 않고, P형 도핑층의 전체에 전류를 공급하기 위하여 다수의 범프(102)가 절연체 반사막 하부에 형성된다. 상기 다수의 범프(102) 각각에는 언더범프금속(301)(Under bump metallogy, 'UBM')을 증착하는 것도 바람직하다. 이 경우에는 솔더나 은(Ag) 범프를 사용할 수 있다. 상기와 같은 실시예는 전류확산층이 필요 없으며 다스의 범프를 통하여 열 방출등에서 유리한 점을 가진다.The semiconductor light emitting device shown in FIG. 3 is similar to the structure of the semiconductor light emitting device shown in FIG. 2, but there is no current diffusion layer, and a plurality of bumps 102 are insulator reflective films to supply current to the entire P-type doping layer. It is formed at the bottom. Under bump metal 301 (UBM ') may be deposited on each of the plurality of bumps 102. In this case, solder or silver (Ag) bumps can be used. Such an embodiment does not require a current spreading layer and has advantages in heat dissipation and the like through a dozen bumps.

상기와 같이, 본 발명의 바람직한 실시예를 참조하여 설명하였지만 해당 기술 분야의 숙련된 당업자라면 하기의 특허청구범위에 기재된 본 발명의 사상 및 영역으로부터 벗어나지 않는 범위 내에서 본 발명을 다양하게 수정 및 변경시킬 수 있음을 이해할 수 있을 것이다.As described above, it has been described with reference to the preferred embodiment of the present invention, but those skilled in the art various modifications and changes of the present invention without departing from the spirit and scope of the present invention described in the claims below I can understand that you can.

상술한 바와 같이 본 발명에 따르면, 절연체 반사막을 사용함으로써 원하지 않는 방향으로 손실되는 광을 줄여 발광 효율을 높일 수 있으며 절연의 특성을 이용하여 보호막으로도 사용이 가능하다. As described above, according to the present invention, by using the insulator reflective film, light loss can be improved by reducing light lost in an undesired direction, and it can be used as a protective film by using the characteristics of insulation.

또한, 스크라이브 공정을 거친 후에 칩의 옆면에까지 절연체 반사막을 형성 할 경우에는 소자의 ESD 특성 향상도 기대할 수 있다.In addition, when the insulator reflective film is formed on the side of the chip after the scribing process, the ESD characteristics of the device can be improved.

Claims (7)

플립칩 구조를 형성하는 발광소자에 있어서,In the light emitting device forming a flip chip structure, 활성층에서 방출되는 빛을 상부면으로 모두 반사시키기 위하여 도핑층 하부에 형성되는 HfO2 또는 ZrO2로 이루어진 절연체 반사막;An insulator reflective film made of HfO 2 or ZrO 2 formed under the doped layer to reflect all the light emitted from the active layer to the upper surface; 상기 절연체 반사막 하부에 형성되어 도핑층 전면에 전류를 공급하는 복수개의 범프; 및A plurality of bumps formed under the insulator reflective film to supply current to the entire surface of the doped layer; And 상기 절연체 반사막과 상기 복수 개의 범프 사이에 각각 형성되는 언더범프금속을 포함하는 것을 특징으로 하는 플립칩 발광소자.And an under bump metal formed between the insulator reflective film and the plurality of bumps, respectively. 제 1항에 있어서, 상기 절연체 반사막은 n형 또는 p형 도핑층 하부에 형성되는 것을 특징으로 하는 플립칩 발광소자.The flip chip light emitting device of claim 1, wherein the insulator reflective film is formed under an n-type or p-type doped layer. 삭제delete 제 1항에 있어서, 상기 절연체 반사막은 2개 이상의 층이 적층되는 것을 특징으로 하는 플립칩 발광소자.The flip chip light emitting device of claim 1, wherein two or more layers of the insulator reflective film are stacked. 제 1항에 있어서, 상기 절연체 반사막과 상기 도핑층 사이에는 상기 도핑층 전면에 전류를 공급하기 위한 전류확산층을 포함하는 것을 특징으로 하는 플립칩 발광소자.The flip chip light emitting device of claim 1, further comprising a current diffusion layer between the insulator reflective film and the doped layer to supply current to the entire surface of the doped layer. 삭제delete 제 1항에 있어서, 상기 절연체 반사막은 측면에도 형성되어 측면에 발산되는 빛을 반사하는 것을 특징으로 하는 플립칩 발광소자.The flip chip light emitting device of claim 1, wherein the insulator reflective film is formed on a side surface to reflect light emitted from the side surface.
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