KR100770583B1 - The Light Emitting Device using the Free-Standing Semiconductor Substrate and Manufacturing of the same - Google Patents

Abstract

According to the present invention, a light emitting device is manufactured using a nitride semiconductor substrate instead of a sapphire substrate which is not easy to emit heat and static electricity, thereby improving reliability and manufacturing a light emitting device having high light output even in a single device because of high reliability. do. In the provision of the nitride semiconductor substrate, the nitride semiconductor is grown using a sapphire substrate of the back-polished double-sided substrate as a growth substrate, and then the sapphire substrate is removed by a combination including at least one of dry etching and wet etching. In addition, the sapphire substrate can be removed in an easier process than the prior art while reducing damage to the nitride semiconductor.

Vertical Electrode Light Emitting Device, Nitride Semiconductor Substrate, Wet Etch

Description

Vertical electrode type light emitting device using nitride semiconductor substrate and manufacturing method thereof {The Light Emitting Device using the Free-Standing Semiconductor Substrate and Manufacturing of the same}

1 shows a cross section and a plane of a planar electrode light emitting device.

2 is a cross-sectional view of a vertical light emitting device and a cross section of a light emitting device further including a plane and a transparent electrode or a tunneling layer.

3 illustrates a method of growing a nitride semiconductor of a nitride semiconductor substrate.

FIG. 4 is a graph illustrating etching rates of sapphire and nitride semiconductor (GaN) according to ICP and RIE power in ICP / RIE dry etching.

FIG. 5 is a graph showing the etching rate of sapphire and nitride semiconductor (GaN) versus the temperature of the etchant in wet etching using a mixed solution of sulfuric acid (H ₂ SO ₄ ) and phosphoric acid (H ₃ PO ₄ ) as an etchant. to be.

6 is a photograph of the surface of the nitride semiconductor exposed due to the removal of the sapphire substrate after the removal of the sapphire substrate from the nitride semiconductor through a wet etching method.

7 sequentially shows a first embodiment of the present invention.

8 sequentially illustrates a second embodiment of the present invention.

9 sequentially shows a third embodiment of the present invention.

10 sequentially shows a fourth embodiment of the present invention.

11 sequentially shows a fifth embodiment of the present invention.

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device composed of a nitride semiconductor and emitting light when a current flows, wherein the vertical electrode type light emitting device has grown a nitride semiconductor layer using a conductive nitride semiconductor substrate instead of a sapphire substrate used to grow the nitride semiconductor. A device and a method of manufacturing the same.

If the lattice constant of the thin film grown on the base substrate (or the growth substrate) and the base substrate is different, crystal defects are caused by the lattice constant difference between the base substrate and the thin film, which deteriorates the semiconductor thin film. The base substrate is determined according to the type of thin film to be grown. Therefore, AlGaP, GaP / AlP heterojunction structures grow on GaP substrates, InP grows on InP substrates, and GaAs, GaAlAs, InGaP grow on InGaAs and GaAs substrates.

In particular, in the case of GaN (nitride semiconductor), a sapphire substrate having a lattice constant similar to that of a nitride semiconductor is used to reduce lattice defects. However, unlike the GaP, InP, GaAs, and Si substrates, the sapphire substrate cannot make a conductive substrate by addition of impurities. Therefore, it is difficult to manufacture the vertical electrode light emitting device, and as shown in FIG. 1, only the flat electrode light emitting device in which both the first electrode and the second electrode are formed on the growth surface side of the epitaxial layer can be manufactured.

Since the flat electrode light emitting device has two electrodes formed on the same surface, an area of two electrodes required for wire bonding on one surface must be secured. Therefore, the chip area of the light emitting device must also be larger than a certain size, and accordingly, there is a limit to the increase in the chip production per wafer. In addition, since the sapphire substrate is an insulator substrate, it is difficult to discharge static electricity flowing from the outside, and there is a disadvantage in that the frequency of generating a light emitting device having poor performance due to the static electricity increases. This lowers the reliability of the device and comes with various restrictions such as the need to add a zener diode in the packaging process. In addition, since the sapphire substrate has a low thermal conductivity, it is difficult to dissipate heat generated during driving of the light emitting device to the outside. Accordingly, there is a restriction in applying a high current for high output of the light emitting device.

In addition, in order to obtain a laser oscillation gain, it is important for a laser diode, which is one of the light emitting devices, to obtain a surface of a resonator having excellent reflection characteristics. However, since the sapphire substrate is hard, it is not easy to process and it is difficult to form cleaved surfaces, which makes it difficult to manufacture laser diodes having excellent performance. Therefore, although the industrial value of the sapphire substrate was recognized, the manufacturing cost is high when the nitride semiconductor laser diode is manufactured using the sapphire substrate. Therefore, the sapphire substrate has not been widely used to manufacture the nitride semiconductor laser diode. In particular, high value-added electronic devices such as Hetero Bipolar Transistors (HBTs) should be manufactured in the form of vertical electrodes, which are known to be almost impossible to manufacture due to their inability to process sapphire substrates.

In order to solve the above-mentioned problems, a nitride semiconductor must be grown on a nitride semiconductor substrate which is easy to process instead of a sapphire substrate, but it is not easy to manufacture the nitride semiconductor substrate. Conventionally, in order to manufacture the nitride semiconductor substrate, a method of separating a sapphire base substrate using a laser lift-off method has been used. However, since the laser lift-off method requires the use of expensive equipment equipped with a high power excimer laser, the manufacturing cost is high and the method has a complicated lighting problem. There are various problems such as surface damage.

Therefore, a light emitting device in which a nitride semiconductor is grown on a nitride semiconductor substrate having a lattice constant such as a nitride semiconductor manufactured by an easier method and a method of manufacturing the light emitting device have been studied.

The present invention provides a nitride semiconductor substrate in which a nitride semiconductor layer is grown on a nitride semiconductor substrate formed by growing a nitride semiconductor substrate using the sapphire substrate as a growth substrate and removing the sapphire substrate. An object of the present invention is to propose a vertical electrode type light emitting device and a method of manufacturing the same.

In addition, the present invention, in forming the nitride semiconductor substrate, using a sapphire substrate polished on both sides as a growth substrate for growing the nitride semiconductor of the nitride semiconductor substrate, performed by any one of wet etching, dry etching or a combination of two The object of the present invention is to propose a vertical electrode type light emitting device using a nitride semiconductor substrate from which the sapphire substrate is removed, and a manufacturing method thereof.

In addition, by growing a nitride semiconductor layer on the nitride semiconductor substrate, it is made of a vertical electrode type can reduce the chip area than the conventional light emitting device, and thus a vertical electrode type light emitting device using a nitride semiconductor substrate with improved chip yield per wafer and its It is an object of the present invention to propose a manufacturing method.

In addition, it is an object of the present invention to propose a vertical electrode type light emitting device using a nitride semiconductor substrate, which includes a conductive nitride semiconductor substrate, thereby facilitating the discharge of static electricity and heat emission, thereby improving the reliability of the device.

In order to achieve the above object, the present invention provides a. Growing a nitride semiconductor (In _x (Ga _y Al _1-y ) N (1≥x≥0, 1≥y≥0, x + y> 0)) doped with any one of Si, B and Mg on the sapphire substrate And removing at least a portion of the sapphire substrate used as the growth substrate of the nitride semiconductor to provide a nitride semiconductor substrate; b. Forming a nitride semiconductor layer including a first conductive layer, a light emitting layer, and a second conductive layer on the nitride semiconductor substrate; c. Forming a second electrode on the bottom surface of the nitride semiconductor substrate; and d. Forming a first electrode on an upper surface of the second conductivity type contact layer; We propose a method of manufacturing a vertical electrode type light emitting device using a nitride semiconductor substrate comprising a.

The nitride semiconductor constituting the nitride semiconductor substrate is preferably doped at a concentration of 10 ¹⁵ / cm 3 to 10 ²¹ / cm 3.

The growth of the nitride semiconductor layer in step a is vapor phase epitaxy (VPE), hydride vapor phase epitaxy (HVPE), metal organic vapor phase epitaxy (MOVPE), metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), It is preferably carried out by a method by any one or combination of low pressure chemical vapor deposition (LPCVD), liquid phase epitaxy (LPE).

Preferably, the sapphire substrate used as the growth substrate of the nitride semiconductor substrate is a back-polished double-sided substrate. In step a, the removal of the sapphire substrate used as the growth substrate of the nitride semiconductor layer is performed during wet etching or dry etching. It is more preferable to carry out in a combination including at least any one or more.

The wet etching is hydrochloric acid (HCl), nitric acid (HNO ₃ ), potassium hydroxide (KOH), sodium hydroxide (NaOH), sulfuric acid (H ₂ SO ₄ ), phosphoric acid (H ₃ PO ₄ ), chromium oxide (CrO ₃ ) and More preferably, it is performed using a mixed solution of any one of aluene (4H ₃ PO ₄ + 4CH ₃ COOH + HNO ₃ + H ₂ O) or a combination thereof as an etchant. The dry etching is more preferably performed by ICP / RIE or RIE method using at least one of BCL ₃ , Cl ₂ , HBr, Ar as an etching gas.

In step a, in order to prevent the nitride semiconductor layer from being damaged by wet etching, a nitride semiconductor (In _x (Ga _y Al _1-y ) N) is formed on a portion of the surface of the sapphire substrate before growing the nitride semiconductor on the sapphire substrate. (1≥x≥0, 1≥y≥0, x + y> 0), and deposit an etch stop layer comprising any one of a silicon oxide cluster (SiO ₂ cluster) or a silicon nitride cluster (SiN _x cluster). It is preferable to further include the step, and before performing the step c, it is more preferable to further include the step of etching using the etch stop layer fluoride (Buffer Oxide Etchant) as an etchant.

The nitride semiconductor layer including the first conductive layer, the light emitting layer, and the second conductive layer in step b may have In _x (Ga _y Al _1-y ) N (1≥x≥0, 1≥y≥0, x + y> It is preferable to have a composition of 0),

In the step b, growing the nitride semiconductor layer on the nitride semiconductor substrate is preferably performed by any one or a combination of metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE).

The first electrode in step c is formed of a metal layer containing any one or more of Ti, Al, Ni, Au, and Pt, and the second electrode in step d is Ti, Al, Ni, Au, Pt. It is preferably formed of a metal layer containing any one or more of them. Any one of indium tin oxide (ITO), zinc oxide (ZnO), tin oxide (SnO ₂ ), and Al doped ZnO (AZO) to substantially cover an entire surface of the nitride semiconductor substrate before the first electrode is formed. More preferably, further comprising forming a.

In addition, the present invention a. A nitride semiconductor (In _x (Ga _y Al _1-y ) N (1≥x≥0, 1≥y≥0, x doped with any one of Si, B, and Mg, which constitutes a nitride semiconductor substrate on a sapphire base substrate) + y>0)); b. Forming a nitride semiconductor layer including a first conductive layer, a light emitting layer, and a second conductive layer on the nitride semiconductor substrate; c. Etching the sapphire base substrate used as the growth substrate of the nitride semiconductor to remove at least a portion thereof; d. Forming a first electrode under the nitride semiconductor substrate; and e. Forming a second electrode on the second conductivity type contact layer; We propose a method of manufacturing a vertical electrode type light emitting device using a nitride semiconductor substrate comprising a.

The nitride semiconductor constituting the nitride semiconductor substrate is preferably doped at a concentration of 10 ¹⁵ / cm 3 to 10 ²¹ / cm 3, and an n-type nitride semiconductor or p-type nitride having a resistivity of 10 ⁻² cm 3 or less. It is more preferable that it is either of semiconductors.

In the step a, the growth of the nitride semiconductor of the nitride semiconductor substrate is performed by vapor phase epitaxy (VPE), hydride vapor phase epitaxy (HVPE), metal organic vapor phase epitaxy (MOVPE), metal organic chemical vapor deposition (MOCVD), and molecular beam (MBE). epitaxy, low pressure chemical vapor deposition (LPCVD), liquid phase epitaxy (LPE), or a combination thereof.

The nitride semiconductor layer including the first conductive layer, the light emitting layer, and the second conductive layer in step b may have In _x (Ga _y Al _1-y ) N (1≥x≥0, 1≥y≥0, x + y> It is preferable to have a composition of 0), the growth of the nitride semiconductor layer in step b is more preferably carried out by any one method or a combination of metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE) Do.

Preferably, the sapphire substrate used for growing the nitride semiconductor of the nitride semiconductor substrate is a back-polished double-sided substrate. In step c, the sapphire substrate used as the growth substrate of the nitride semiconductor layer is wet-etched or dry. More preferably, the etching is performed in a combination including at least one or more of them.

In addition, the wet etching is hydrochloric acid (HCl), nitric acid (HNO ₃ ), potassium hydroxide (KOH), sodium hydroxide (NaOH), sulfuric acid (H ₂ SO ₄ ), phosphoric acid (H ₃ PO ₄ ), chromium oxide (CrO ₃ ) And it is more preferably carried out using a mixed solution of any one or a combination of aluene (4H ₃ PO ₄ + 4CH ₃ COOH + HNO ₃ + H ₂ O) as an etchant, the dry etching is BCL ₃ More preferably, it is performed by ICP / RIE or RIE method using at least one of, Cl ₂ , HBr and Ar as an etching gas.

In step a, in order to prevent the nitride semiconductor layer from being damaged by wet etching, a nitride semiconductor (In _x (Ga _y Al _1-y ) N) is formed on a portion of the surface of the sapphire substrate before growing the nitride semiconductor on the sapphire substrate. (1≥x≥0, 1≥y≥0, x + y> 0), and deposit an etch stop layer comprising any one of a silicon oxide cluster (SiO ₂ cluster) or a silicon nitride cluster (SiN _x cluster). It is preferable to further include the step, and before performing the step c, it is more preferable to further include the step of etching using the etch stop layer fluoride (Buffer Oxide Etchant) as an etchant.

The first electrode in step d is formed of a metal layer containing any one or more of Ti, Al, Ni, Au, and Pt, and the second electrode in step e is Ti, Al, Ni, Au, Pt. It is preferably formed of a metal layer containing any one or more of them. In addition, any one of indium tin oxide (ITO), zinc oxide (ZnO), tin oxide (SnO ₂ ), and Al doped ZnO (AZO) is formed to substantially cover the entire surface of the nitride semiconductor substrate before the first electrode is formed. More preferably, it further comprises the step of forming one.

The present invention also proposes a vertical electrode type light emitting device using a nitride semiconductor substrate manufactured by the method of manufacturing a vertical electrode type light emitting device using the nitride semiconductor substrate.

Hereinafter, with reference to the accompanying drawings will be described in detail the present invention.

1 shows a cross-sectional view (Fig. 1 (a)) and a plan view (Fig. 1 (b)) of a light emitting device (light emitting diode) including a sapphire substrate used as a growth substrate.

The light emitting element including the sapphire substrate includes a sapphire substrate that is difficult to process with conductivity, and has a planar electrode structure in which both the first electrode and the second electrode are formed on the epitaxial surface. Since the planar electrode-like structure forms both the first electrode and the second electrode on the same surface, the area required for wire bonding should be secured with respect to the two electrodes, so that the chip area of the light emitting device should also be larger than a predetermined size. This impedes improvement in chip yield per wafer. In addition, since the sapphire substrate is an insulator, it is difficult to discharge static electricity flowing from the outside, thereby increasing the possibility that a device having poor performance due to static electricity may be caused. In addition, since the sapphire substrate has low thermal conductivity, it is difficult to dissipate heat generated during the driving of the light emitting device to the outside, and there is a limitation in applying a large current required for high output of the light emitting device. As described above, the light emitting device including the sapphire substrate has various problems due to the sapphire substrate.

Therefore, if a nitride semiconductor substrate having a lattice constant such as a nitride semiconductor layer is used as a growth substrate instead of the sapphire substrate, it is obvious that the problems caused by the sapphire substrate can be solved.

2 (a) to 2 (b) show a sectional view (Fig. 2 (a)) and a plan view (Fig. 2 (b)) of a vertical electrode type light emitting element (light emitting diode) using a nitride semiconductor substrate.

In the vertical electrode type light emitting device using the nitride semiconductor substrate proposed in the present invention, as shown in FIG. 2, a nitride semiconductor (In _x (Ga _y Al _1-y ) N (1) doped with any one of Si, B, and Mg is used. ≥x≥0, 1≥y≥0, x + y> 0)), the nitride semiconductor substrate 11, the first conductive layer 12, the light emitting layer 13, the second conductive layer 14, and the first The electrode 21 and the second electrode 22 are included.

The nitride semiconductor substrate 11 includes a nitride semiconductor to which an impurity composed of any one of Si, B, and Mg is added, and the nitride semiconductor of the nitride semiconductor substrate is grown using a sapphire substrate as a growth substrate. After growing the nitride semiconductor or growing a nitride semiconductor layer including a first conductive layer, a light emitting layer, and a second conductive layer, which are components of a light emitting device grown on the nitride semiconductor, the nitride semiconductor is used as a growth substrate of the nitride semiconductor. The sapphire substrate is removed by a method of either wet etching, dry etching or a combination of the two.

The first conductive layer, the light emitting layer, and the second conductive layer are formed of a nitride semiconductor (In _x (Ga _y Al _1-y ) N (1≥x≥0, 1≥y≥0, x + y> 0)). The first conductive layer and the second conductive layer are doped with Si or Mg to form an n-type nitride semiconductor (Si doped) or a p-type nitride semiconductor (Mg doped). Preferably, the first conductive layer may be composed of an n-type nitride semiconductor, and the second conductive layer may be composed of a p-type nitride semiconductor.

The first electrode is configured on the second conductive layer. Since the light generated in the nitride semiconductor layer exits through the first electrode, the light transmittance of the first electrode is very important. Therefore, since the first electrode is preferably formed of a thin metal having excellent light transmittance, the first electrode is formed of a single layer or a composite layer of a metal including at least one of Ti, Al, Ni, Au, and Pt. Alternatively, the first electrode may be formed of indium tin oxide (ITO), zinc oxide (ZnO), tin oxide (SnO ₂ ), or Al doped ZnO (AZO) having excellent light transmittance. It can be formed after forming either. As illustrated, a first electrode pad 31 is formed on the first electrode. In order to easily perform wire bonding, the first electrode pad 31 preferably has a thick Au layer.

In addition, like the first electrode, the second electrode 22 is formed of a single layer or a composite layer of metal including any one or more of Ti, Al, Ni, Au, and Pt.

The nitride semiconductor substrate 11 includes a nitride semiconductor grown on a sapphire substrate, wherein the sapphire substrate is formed separately from the nitride semiconductor. It is preferable that the sapphire substrate is a double-sided substrate that is back-polished before growing the nitride semiconductor. After growing the nitride semiconductor, the sapphire substrate is separated from the nitride semiconductor by performing a method comprising at least one of wet etching and dry etching. The thickness of the sapphire substrate used as the growth substrate is preferably 10㎛ to 500㎛. In addition, the crystal growth surface of the sapphire may be made of any one of the C, M, A, R surface. In addition, in order to reduce crystal defects that may occur when the nitride semiconductor is grown, a pattern may be formed in at least one of the x or y directions or the two directions.

The nitride semiconductor of the nitride semiconductor substrate has a composition of In _x (Ga _y Al _1-y ) N, where ₁ ≧ x ≧ 0, 1 ≧ x ≧ 0, and x + y> 0.

The thicker the thickness of the nitride semiconductor 11 of the nitride semiconductor substrate is, when the growth process of the nitride semiconductors 12, 13, 14 constituting the light emitting element described later and the manufacturing process of the light emitting element are performed, The nitride semiconductor substrate can be more easily handled. If the thickness of the nitride semiconductor is too thin, a stress may be generated due to lattice difference between the sapphire substrate and the nitride semiconductor used to grow the nitride semiconductor of the nitride semiconductor substrate, which may cause the nitride semiconductor substrate to bend. In addition, there is a risk that the problem of cracking during the growth of the nitride semiconductor of the nitride semiconductor substrate. Therefore, the nitride semiconductor 11 of the nitride semiconductor substrate grown on the sapphire substrate is preferably grown to a thickness of 10㎛ to 500㎛.

In addition, the nitride semiconductor of the nitride semiconductor substrate is preferably added with an impurity containing any one of Si, B, Mg in order to form conductivity. If Si or B is added as an impurity, the nitride semiconductor substrate is composed of an n-type nitride semiconductor, and when the Mg is added, the nitride semiconductor substrate is composed of a p-type nitride semiconductor. The concentration (doping concentration) of adding the impurity depends on the type of light emitting device to be manufactured using the nitride semiconductor substrate, and is preferably 10 ¹⁵ / cm 3 to 10 ²¹ / cm 3. In addition, the nitride semiconductor of the nitride semiconductor substrate may be grown in a single layer or a plurality of layers depending on the type of light emitting device to be manufactured using the nitride semiconductor substrate.

The nitride semiconductor of the nitride semiconductor substrate may include vapor phase epitaxy (VPE), hydride vapor phase epitaxy (HVPE), metal organic vapor phase epitaxy (MOVPE), metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), and LPCVD. (low pressure chemical vapor deposition), LPE (liquid phase epitaxy) is preferably grown by the method by any one or a combination thereof.

3 illustrates various methods of growing a nitride semiconductor of a nitride semiconductor substrate.

As it is shown in Figure 3a, first and then the prepared sapphire substrate having a thickness of 430㎛, liquid vapor deposition on the sapphire substrate: a nitride semiconductor (In _x having a thickness of 200㎛ by using a (hydrogen vapor phase epitaxy HVPE) (Ga _y Al _1-y ) N ( ₁ ≧ x ≧ 0, 1 ≧ x ≧ 0, x + y> 0) is grown. As described above, the nitride semiconductor may include metal organic chemical vapor deposition, liquid phase epitaxy, molecular beam epitaxy, and metalorganic vapor phase epitaxy. It is also possible to grow using.

When the nitride semiconductor is grown using the HVPE process, the film quality of the nitride semiconductor is worse than that of the nitride semiconductor grown using the metal organic chemical vapor deposition (MOCVD) process, but the growth rate of the nitride semiconductor is increased. Since it is possible to more than 100㎛ / hr per hour, there is an advantage that the mass production is easy and the manufacturing cost can be reduced. Therefore, the nitride semiconductor 11 of the nitride semiconductor substrate is preferably grown using the HVPE method.

The nitride semiconductor of the nitride semiconductor substrate was grown by HVPE method using trimethyl gallium (trimethyl gallium), trimethyl aluminum at a temperature of 900 ℃. In addition, in order to make the nitride semiconductor substrate conductive, a nitride semiconductor to which an impurity containing any one of Si, B, and Mg is added is formed. Preferably, in order to easily crystal-grow the nitride semiconductor layer of the light emitting device to be grown on the nitride semiconductor substrate, a nitride semiconductor substrate composed of an n-type nitride semiconductor containing Si as an impurity is provided. The concentration (doping concentration) of adding the impurity varies depending on the type of light emitting device to be manufactured using the nitride semiconductor substrate, and may be preferably 10 ¹⁵ / cm 3 to 10 ²¹ / cm 3.

Alternatively, as shown in FIG. 3B, a nitride semiconductor (In _x (Ga _y Al _1-y ) N (1) having a thickness of 200 µm is formed on a 500 µm thick sapphire substrate 10 using a hydrogen vapor phase epitaxy (HVPE) method. ≥x≥0, 1≥x≥0, x + y> 0)), and then the nitride semiconductor (In _x (Ga _y Al) by using the MOCVD method on the nitride semiconductor having a thickness of 200 µm grown using the HVPE method _1-y ) N ( ₁ ≧ x ≧ 0, 1 ≧ x ≧ 0, x + y> 0) is regrown. In the nitride semiconductor substrate in which the nitride semiconductor layer is grown by using the HVPE method and the MOCVD method, as in the nitride semiconductor substrate formed by growing the nitride semiconductor layer only by the HVPE method, in order to make the nitride semiconductor be conductive, Si or An impurity of any one of Mg is added to form a nitride semiconductor substrate composed of an n-type nitride semiconductor (Si addition) or a p-type nitride semiconductor (Mg addition). In this case, the concentration (doping concentration) of adding impurities varies according to the type of light emitting device to be manufactured using the nitride semiconductor substrate, and preferably has a doping concentration of 10 ¹⁵ / cm 3 to 10 ²¹ / cm 3. In addition, the nitride semiconductor layer of the nitride semiconductor substrate may be grown in a single layer or a plurality of layers depending on the type of light emitting device to be manufactured using the nitride semiconductor substrate.

As shown in FIG. 3C, in order to reduce crystal defects between the nitride semiconductor of the nitride semiconductor substrate and the sapphire substrate used as the growth substrate, SiO ₂ , SiN on the sapphire substrate before the growth of the nitride semiconductor to a thickness of 10 Å or less. The fine structure may be formed by any one of SiC, or a combination of the two. After forming the microstructure, as mentioned above, the nitride semiconductor (In _x (Ga _y Al _1-y ) N (1 ≧ x ≧ 0, 1 ≧ x) may be formed using the HVPE process or the combination of the HVPE process and the MOCVD process. ≧ 0, x + y> 0)). The microstructure composed of any one or a combination of SiO ₂ and SiN minimizes the stress between the sapphire substrate 10 and the nitride semiconductor, thereby improving the film quality of the nitride semiconductor of the nitride semiconductor substrate. In addition, the microstructure may be used as a wet layer stop layer for protecting the nitride semiconductor layer when performing wet etching to remove the sapphire substrate to be performed after the nitride semiconductor is grown to provide the nitride semiconductor substrate. Can be. When the microstructure is formed on the sapphire substrate, it is most preferable that the wafer coverage covering the sapphire substrate is 95% or less. The reason is that when the area ratio of the microstructure covering the sapphire substrate is 100%, the sapphire from which the nitride semiconductor can grow is not exposed and the nitride semiconductor is not grown. The SiC microstructure may be formed on the entire surface of the sapphire substrate because a nitride semiconductor is grown thereon.

As shown in FIG. 3D, before the nitride semiconductor is grown, a pattern may be formed on at least one of the x or y directions or in the two directions on the surface of the sapphire substrate used as the growth substrate. By the pattern formed on the surface of the sapphire substrate, crystal defects of the nitride semiconductor and sapphire can be canceled in advance.

In order to provide the nitride semiconductor substrate, the sapphire substrate used for growing the nitride semiconductor of the nitride semiconductor substrate should be removed. In order to remove the sapphire substrate, it may be performed by a method including a combination including any one or more of mechanical polishing, dry etching, and wet etching.

First, in order to prevent the surface of the nitride semiconductor from being damaged during the etching process performed to remove the sapphire substrate, a protective film such as spin-on-glass (SOG), SiN _x , and SiO ₂ may be deposited about 1 μm.

In order to remove the sapphire substrate 10 from the nitride semiconductor of the nitride semiconductor substrate, the sapphire substrate 10 μm to 500 μm thick is wrapped and polished until it becomes 1 μm to 300 μm thick, and the surface of the wrapped surface Mirror polishing is carried out so that this roughness is 20 micrometers or less. The reason for mirror-polishing the surface of the wrapped surface is that the roughness of the surface of the sapphire substrate 10 is transferred to the nitride semiconductor grown by etching as it may damage the nitride semiconductor structure.

Wrapping of the sapphire substrate 11 may be performed by any one or a combination of chemical mechanical polishing (CMP), mechanical polishing, RIE dry etching, ICP / RIE dry etching, and wet etching. The mechanical polishing is preferably using a diamond slurry or alumina (Al ₂ O ₃ ) powder. In addition, the wet etching is hydrochloric acid (HCl), nitric acid (HNO ₃ ), potassium hydroxide (KOH), sodium hydroxide (NaOH), sulfuric acid (H ₂ SO ₄ ), phosphoric acid (H ₃ PO ₄ ), chromium oxide (CrO ₃ ) , Using a mixed solution of any one or a combination of potassium hydroxide (KOH), potassium hydrogen sulfate (KHSO ₄ ) and aluene (4H ₃ PO ₄ + 4CH ₃ COOH + HNO ₃ + H ₂ O) as an etching solution It is preferable. In addition, as an etching gas of ICP / RIE or RIE dry etching, it is preferable to use any one of BCL ₃ , Cl ₂ , HBr, Ar, or a mixed gas thereof.

In the case of a sapphire substrate having a double-sided mirror surface polished on the back surface, the lapping process of the sapphire substrate can be omitted. When a thick nitride semiconductor is grown on the sapphire substrate, the substrate is bent, and lapping cannot be performed with a uniform thickness, and the substrate may be broken when the lapping process is performed. It is more preferable to omit the lapping process of the sapphire substrate by using the sapphire substrate having the sapphire substrate and to remove the sapphire substrate by any of wet etching or dry etching, or a combination thereof.

The wet etching is performed in the following manner.

Hydrochloric acid (HCl), nitric acid (HNO ₃ ), potassium hydroxide (KOH), sodium hydroxide (NaOH), sulfuric acid (H ₂ SO ₄ ), phosphoric acid (H ₃ PO ₄ ), chromium oxide with a temperature of 100 ° C to 500 ° C Wet etching using an etching solution consisting of a mixed solution containing any one or more of (CrO ₃ ), potassium hydrogen sulfate (KHSO ₄ ) and aluene (4H ₃ PO ₄ + 4CH ₃ COOH + HNO ₃ + H ₂ O) Measure the sapphire's etch rate at. By the etching rate of the sapphire, the sapphire substrate is immersed in the etching solution for a time required for etching the thickness of the sapphire substrate 10 plus the thickness of about 5 μm.

The hydrochloric acid (HCl), nitric acid (HNO ₃ ), potassium hydroxide (KOH), sodium hydroxide (NaOH), sulfuric acid (H ₂ SO ₄ ), phosphoric acid (H ₃ PO ₄ ), chromium oxide (CrO ₃ ), potassium hydrogen sulfate Rate and sapphire substrate when etching a nitride semiconductor with an etching solution composed of a mixed solution containing at least one of (KHSO ₄ ) and aluene (4H ₃ PO ₄ + 4CH ₃ COOH + HNO ₃ + H ₂ O) The speed of etching is about 1/10 or less. In other words, the etching selectivity of the nitride semiconductor 11 with respect to the sapphire substrate 10 is 10 or more. Therefore, even if the etching process is performed for a longer time than the time required to completely etch the sapphire substrate 10, since the etching speed of the nitride semiconductor is low, the risk of damage to the nitride semiconductor is small.

On the other hand, when performing the wet etching, in order to shorten the etching time, the temperature of the etching solution is preferably maintained at 100 ℃ or more. In order to maintain the temperature of the etching solution above 100 ° C, the solution may be heated by the direct heating method or the indirect heating method using light absorption to put the solution on the heater or directly contact the heater.

In order to remove the sapphire substrate 10, only wet etching may be performed as described above, or ICP / RIE dry etching may be used, or the wet etching and ICP / RIE dry etching may be mixed.

In more detail, the sapphire substrate can be removed from the nitride semiconductor by wet etching the sapphire substrate at a high speed until the thickness is about 10 μm, and then dry etching the sapphire substrate having the thickness of about 10 μm. Dry etching the relatively thin thickness of the sapphire substrate remaining after performing the wet etching is more preferable because the surface of the nitride semiconductor exposed by the etching of the sapphire substrate can be mirrored. The rough surface can also be smoothed by lapping. The lapping may be performed by mechanical polishing or chemical mechanical polishing (CMP).

In performing the dry etching, it is advantageous to etch the sapphire substrate 10 at a high speed as much as possible to increase the ICP and RIE power as much as possible, but it is not necessary to control the ICP and RIE power because it may damage the epi layer. Need attention

4 is a graph illustrating etching rates of sapphire and nitride semiconductor (GaN) by ICP / RIE dry etching.

As can be seen in Figure 4, the sapphire and nitride semiconductor (GaN) is increasing the etching rate as the ICP and RIE power increases, it can be seen that the etching ratio between the sapphire and nitride semiconductor is decreasing. These results indicate that when sapphire substrates are etched by dry etching, ICP / RIE technology, it is difficult to stop etching in nitride semiconductors made of nitride semiconductors.In order to stop etching in nitride semiconductors, techniques such as optical analysis method or residual gas analysis method are used. Should be used.

FIG. 5 is a graph showing the etching rate of sapphire and nitride semiconductor (GaN) versus the temperature of the etchant in wet etching using a mixed solution of sulfuric acid (H ₂ SO ₄ ) and phosphoric acid (H ₃ PO ₄ ) as an etchant. to be. The etching selectivity of the nitride semiconductor and sapphire by wet etching using a mixture of sulfuric acid and phosphoric acid as an etchant was 20 or more at a specific temperature, and in the wet etching, the nitride selectivity of the nitride semiconductor and sapphire was It can be seen that the semiconductor can be effectively used as an etch stop layer of the sapphire substrate. In addition, the etching selectivity of the nitride semiconductor and sapphire was 20 or more even at a high temperature of 100 ° C. In particular, as shown in Figure 5, since the etching rate of sapphire is more than 1um / min at 320 ℃ temperature, considering the production cost, productivity, process stabilization, the method of removing sapphire through the wet etching is conventionally used It is more advantageous for mass production than the former method.

One of the important parts of the etching is to remove only the part to be etched and not to damage the part not to be etched. In addition, when applied to mass production, process conditions should be ensured that the nitride semiconductor is not damaged even if it is sufficiently immersed in the etching solution to completely remove the sapphire substrate.

In order to prevent damage to the nitride semiconductor during etching of the sapphire substrate, an etch stop layer may be separately formed by locally forming a SiC and SiO ₂ protective film on the sapphire substrate before growing the nitride semiconductor.

However, it is desirable to simplify the process by using the nitride semiconductor as an etch stop layer by increasing the etch selectivity between the nitride semiconductor and the sapphire substrate without adding the process of separately forming the etch stop layer. . A nitride semiconductor that can be used as the etch stop layer includes an In _x (Ga _y Al _1-y ) N (1≥x≥0, 1≥y≥0) series, and more preferably, the composition of the nitride semiconductor Increasing the composition ratio of Al included, and additionally doping Mg is effective in increasing the etching selectivity of the nitride semiconductor and sapphire.

6 is a photograph of the surface of the nitride semiconductor exposed due to the removal of the sapphire substrate after the removal of the sapphire substrate from the nitride semiconductor through a wet etching method. As can be seen in Figure 6, even after the sapphire substrate is removed, it is hard to find cracks or damage of the thin film due to the stress, it can be seen that the surface of the nitride semiconductor is also very clean.

Hereinafter, an embodiment of a method of manufacturing a vertical electrode type light emitting device using the nitride semiconductor substrate will be described with reference to the accompanying drawings.

First embodiment

7 shows a first embodiment of the present invention.

According to the first embodiment of the present invention, after the nitride semiconductor of the nitride semiconductor substrate is grown, the sapphire substrate used as the growth substrate of the nitride semiconductor is removed to prepare the nitride semiconductor substrate, and then the first conductive material becomes a constituent part of the light emitting device. A nitride semiconductor layer including a layer, a light emitting layer, and a second conductive layer is grown on the nitride semiconductor substrate.

In order to manufacture a vertical electrode light emitting device, a nitride semiconductor substrate used as a base substrate of the vertical electrode light emitting device is prepared.

In the method of providing the nitride semiconductor substrate, after preparing a sapphire substrate to be used as a growth substrate of the nitride semiconductor constituting the nitride semiconductor substrate (FIG. 7 (a)), the nitride semiconductor of the nitride semiconductor substrate is grown on the sapphire substrate ( 7 (b)). As described above, a method of growing a nitride semiconductor substrate on the sapphire substrate may include vapor phase epitaxy (VPE), hydride vapor phase epitaxy (HVPE), metal organic vapor phase epitaxy (MOVPE), and metal organic chemical vapor deposition (MOCVD). , Molecular beam epitaxy (MBE), low pressure chemical vapor deposition (LPCVD), liquid phase epitaxy (LPE), or a combination thereof. Preferably, there may be a method of growing only by the HVPE method, or a method of regrowing on the nitride semiconductor grown by the HVPE method by the MOCVD method.

Thereafter, as shown in FIG. 7C, the sapphire substrate used as the growth substrate of the nitride semiconductor is removed. As described above, the method of removing the sapphire substrate is preferably performed in a combination including any one or more of mechanical polishing, dry etching and wet etching. More preferably, by using a sapphire substrate having a double-sided mirror surface, the lapping process may be omitted, and may be performed by a method of wet etching or dry etching, or a combination of the two.

Also hydrochloric acid (HCl), nitric acid (HNO ₃ ), potassium hydroxide (KOH), sodium hydroxide (NaOH), sulfuric acid (H ₂ SO ₄ ), phosphoric acid (H ₃ PO ₄ ), chromium oxide (CrO ₃ ), potassium hydrogen sulfate More preferably, the sapphire substrate is removed only by wet etching using (KHSO ₄ ) and aluene (4H ₃ PO ₄ + 4CH ₃ COOH + HNO ₃ + H ₂ O) as an etchant.

After the sapphire substrate is wrapped to a certain thickness, the surface of the sapphire substrate is mirror-polished so that the roughness of the sapphire substrate is not transferred to the nitride semiconductor by etching, and a wet solution using a mixed solution of sulfuric acid and phosphoric acid as an etching solution is used. Etching can be performed. In addition, in order to mirror the surface of the nitride semiconductor exposed by etching for removing the sapphire substrate, the sapphire is rapidly etched by wet etching to have a thickness of about 10 μm or less, and then the thickness of about 10 μm or less is increased. It is possible to dry etch sapphire having. At this time, it is important to properly adjust the ICP and RIE power so as not to damage the epi layer.

A nitride semiconductor layer including a first conductive layer, a light emitting layer, and a second conductive layer is grown on the nitride semiconductor substrate prepared by the above method. (FIG. 7 (d)) The first conductive layer, the light emitting layer, and the second conductive layer. When growing a nitride semiconductor layer comprising a nitride semiconductor layer on the nitride semiconductor substrate, similar to the method of growing a nitride semiconductor of the nitride semiconductor substrate, VPE (vapor phase epitaxy), HVPE (hydride vapor phase epitaxy), MOVPE (metal organic vapor phase) epitaxy), metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), low pressure chemical vapor deposition (LPCVD), liquid phase epitaxy (LPE), or a combination thereof.

More preferably, the nitride semiconductor layer may be grown through any one or a combination of metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) for better film quality of the nitride semiconductor layer.

Thereafter, a first electrode is formed on a surface of the grown second conductive layer 14, and a second electrode is formed on a lower surface of the nitride semiconductor substrate. The first electrode and the second electrode are formed of a metal layer including any one or more of Ti, Al, Ni, Au, and Pt (Fig. 7 (d)).

A first electrode pad 31 for wire bonding is formed on the first electrode (FIG. 7E).

Second embodiment

8 shows a second embodiment of the present invention.

A second embodiment of the present invention is a sapphire substrate used as the growth substrate after growing a nitride semiconductor which is a constituent part of the nitride semiconductor substrate and a nitride semiconductor layer including a first conductive layer, a light emitting layer and a second conductive layer on the sapphire substrate This is different from that of the first embodiment.

In the first embodiment, the sapphire substrate was removed before the nitride semiconductor layer including the first conductive layer, the light emitting layer, and the second conductive layer was grown. In the second embodiment, the nitride semiconductor and the first conductive layer of the nitride semiconductor substrate, After growing the nitride semiconductor layer including the light emitting layer and the second conductive layer, sapphire is removed before forming the electrode.

In the second embodiment, a sapphire substrate is prepared (Fig. 8 (a)), a nitride semiconductor of a nitride semiconductor substrate is grown on the prepared sapphire substrate (Fig. 8 (b)), and a first conductive layer is formed on the nitride semiconductor substrate. The nitride semiconductor layer including the light emitting layer and the second conductive layer is grown (Fig. 8 (c)). Thereafter, the sapphire substrate used as the growth substrate of the nitride semiconductor is removed from the nitride semiconductor (Fig. 8 (d)). The method of growing a nitride semiconductor of the nitride semiconductor substrate, the method of growing a nitride semiconductor layer including a first conductive layer, a light emitting layer, and a second conductive layer on the nitride semiconductor substrate, and a method of removing a sapphire substrate are carried out in the first embodiment. Same as the example.

Thereafter, as in the first embodiment, a first electrode is formed on the second conductive layer, and a second electrode is formed on the lower surface of the nitride semiconductor substrate (FIG. 8E). Subsequently, as shown in FIG. 8 (f), a first electrode pad 31 is formed on the first electrode for wire bonding.

Third embodiment

In a third embodiment of the present invention, the first and second embodiments further include a tunneling layer in a nitride semiconductor layer including the first conductive layer, the light emitting layer, and the second conductive layer. .

The tunneling layer is formed to prevent the device from being damaged by the leakage current generated when the current flows in the reverse direction to the electrostatic discharge (ESD) and the nitride semiconductor light emitting device.

FIG. 2C shows a cross section of the vertical electrode type nitride semiconductor light emitting device including the tunneling layer 15. The tunneling layer is formed on the second conductive layer and is formed to have different characteristics from the second conductive layer. For example, if the second conductive layer is a p-type nitride semiconductor having Mg as a dopant, the tunneling layer is preferably an n-type nitride semiconductor having Si as a dopant. In addition, it is preferable to form a thin in order to facilitate light transmittance and current diffusion. Therefore, in order to reduce the contact resistance between the semiconductor and the metal and to minimize the carrier depletion region between the second conductive layer 14 and the tunneling layer 15, the doping concentration of the second conductive layer and the tunneling layer is to a 1x10 ¹⁹ / ㎤ or more is preferred.

9 sequentially shows a manufacturing method for additionally including a tunneling layer in the first embodiment.

First, the nitride semiconductor is grown by using a sapphire substrate as a growth substrate, and then the nitride semiconductor substrate is prepared by removing the sapphire substrate, as in the first embodiment.

As shown in Fig. 9 (d), a nitride semiconductor layer including the first conductive layer, the light emitting layer, and the second conductive layer and further including a tunneling layer is grown on the nitride semiconductor substrate.

Thereafter, a first electrode is formed on the tunneling layer, a second electrode is formed on a lower surface of the nitride semiconductor substrate, and a first electrode pad for wire bonding is formed on the first electrode as in the first embodiment. same.

Also in the second embodiment, the nitride semiconductor layer including the first conductive layer, the light emitting layer, and the second conductive layer may further include a tunneling layer.

Fourth embodiment

According to a fourth embodiment of the present invention, in the first, second and third embodiments, the vertical electrode type nitride semiconductor light-emitting includes forming an additional transparent electrode before forming the first electrode. It is a manufacturing method of an element.

The transparent electrode is formed to improve the light extraction efficiency of the nitride semiconductor light emitting device, any one of ITO (Indium-Tin-Oxide), ZnO (Zinc Oxide), SnO ₂ (Tin Oxide) or AZO (Al doped ZnO) Is preferably.

2 (d) shows a cross section of a vertical electrode type nitride semiconductor light emitting device further including a transparent electrode. As shown in Fig. 2 (d), the transparent electrode is formed between the second conductive layer and the first electrode.

In addition, in the second embodiment, FIG. 10 sequentially illustrates a method of manufacturing a vertical electrode type nitride semiconductor light emitting device including a transparent electrode. As shown in FIG. 10 (d), after the transparent electrode is formed on the second conductive layer, a first electrode is formed on the transparent electrode. In addition, a second electrode is formed on the lower surface of the nitride semiconductor substrate. Thereafter, a first electrode pad for wire bonding is formed on the first electrode (FIG. 10 (e)).

Although additionally including the transparent electrode is shown only for the second embodiment, the transparent electrode may be additionally included for the first and third embodiments.

Fifth Embodiment

In a fifth embodiment of the present invention, in the first, second, third, and fourth embodiments, the nitride semiconductor and the first semiconductor of the nitride semiconductor substrate may be formed through the etching before etching the sapphire substrate. And forming a protective film to prevent the nitride semiconductor layer including the conductive layer, the light emitting layer, and the second conductive layer from being damaged.

The protective film is preferably any one of spin-on-glass (SOG), SiN _x or SiO ₂ .

11 is a sequential diagram for the fifth embodiment of the present invention. As shown in Fig. 11 (d), a protective film is formed to prevent the nitride semiconductor from being damaged before the sapphire substrate is removed. The protective film is preferably deposited to a thickness of about 1㎛ or less.

Thereafter, the sapphire substrate is removed (FIG. 11 (e)), and the protective film is removed by a buffer oxide etchant (BOE) (FIG. 11 (f)).

Thereafter, a first electrode is formed on the second conductive layer, and a second electrode is formed on the lower surface of the nitride semiconductor substrate (FIG. 11 (g)), and then a first electrode pad for wire bonding is formed on the first electrode ( Figure 11 (h).

According to the present invention, a light emitting device may be manufactured using a nitride semiconductor substrate having conductivity by doping with either Si or Mg, thereby manufacturing the light emitting device as a vertical electrode structure. The light emitting device having the vertical electrode type structure has an advantage of reducing the size of the chip compared to the device having the planar electrode type structure, thereby increasing the chip yield per wafer.

In addition, the light extraction efficiency may be improved by additionally including a transparent electrode, and the influence of leakage current may be reduced by additionally including a tunneling layer.

In addition, the present invention facilitates the removal of the sapphire substrate on which the nitride semiconductor is grown, making it easier to manufacture vertical electrode devices at a lower cost, improving the reliability and brightness of the device, reducing the size of the device, and improving the productivity and device performance. It will be a key technology in the LED lighting field that enables high brightness / high performance nitride semiconductor light emitting devices to be manufactured, and it will be possible to manufacture electronic devices such as HBT (hetero bipolar transistor) which has been considered impossible. It is expected that this will be possible, and further development of technology will be made in this field in the future.

Although the present invention has been described with reference to the embodiments shown in the accompanying drawings, it is merely exemplary, and those skilled in the art will understand that various modifications and equivalent other embodiments are possible. Could be. Therefore, the true scope of protection of the present invention should be defined only by the claims.

As described above, the present invention has an advantage of manufacturing a vertical electrode type light emitting device using a nitride semiconductor substrate. In addition, in removing the sapphire substrate used as a growth substrate to provide the nitride semiconductor substrate, the laser is performed by a combination including at least one of mechanical polishing, dry etching, and wet etching, not a laser lift-off method. There is an advantage of preventing damage to the epi layer by heat generated while performing the lift off method. In addition, by using a high etching selectivity between the sapphire substrate and the nitride semiconductor, etching is improved and reformation of the process is improved, and since a standardized process is possible, there is an advantage in mass production.

In addition, since the vertical electrode type light emitting device can be manufactured, the chip area is reduced and the chip yield per wafer is improved, and since the heat emission and static discharge are efficiently manufactured, the reliability of the device is improved. In addition, since the vertical electrode type light emitting device flows evenly through the entire area of the chip, the vertical electrode light emitting device can be driven even at a large current, and high light output can be obtained from a single device.

Claims (30)

a. Growing a nitride semiconductor (In _x (Ga _y Al _1-y ) N (1≥x≥0, 1≥y≥0, x + y> 0)) doped with any one of Si, B and Mg on the sapphire substrate And removing at least a portion of the sapphire substrate used as the growth substrate of the nitride semiconductor to provide a nitride semiconductor substrate; b. A nitride semiconductor layer (In _x (Ga _y Al _1-y ) N (1≥x≥0, 1≥y≥0, x + y) including a first conductive layer, a light emitting layer, and a second conductive layer on the nitride semiconductor substrate ≫0)); c. Forming a second electrode on a lower surface of the nitride semiconductor substrate, the second electrode being formed of a metal layer including at least one of Ti, Al, Ni, Au, and Pt; and d. Forming a first electrode on a top surface of the second conductive contact layer, the first electrode being formed of a metal layer including at least one of Ti, Al, Ni, Au, and Pt; Method of manufacturing a vertical electrode type light emitting device using a nitride semiconductor substrate comprising a. The method of claim 1, The nitride semiconductor constituting the nitride semiconductor substrate is doped at a concentration of 10 ¹⁵ / cm 3 to 10 ²¹ / cm 3 The manufacturing method of the vertical electrode type light emitting device using the nitride semiconductor substrate. The method of claim 1, The growth of the nitride semiconductor layer in step a is vapor phase epitaxy (VPE), hydride vapor phase epitaxy (HVPE), metal organic vapor phase epitaxy (MOVPE), metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), A method of manufacturing a vertical electrode type light emitting device using a nitride semiconductor substrate, characterized in that it is carried out by a method by any one or a combination of low pressure chemical vapor deposition (LPCVD), liquid phase epitaxy (LPE).  The method of claim 1, The sapphire substrate used as the growth substrate of the nitride semiconductor substrate is a back-polished double-sided substrate manufacturing method of a vertical electrode type light emitting device using a nitride semiconductor substrate. The method of claim 4, wherein In the step a, the removal of the sapphire substrate used as the growth substrate of the nitride semiconductor layer, the vertical electrode type using a nitride semiconductor substrate, characterized in that the combination comprising at least one of wet etching or dry etching Method of manufacturing a light emitting device. The method of claim 5, The wet etching is hydrochloric acid (HCl), nitric acid (HNO ₃ ), potassium hydroxide (KOH), sodium hydroxide (NaOH), sulfuric acid (H ₂ SO ₄ ), phosphoric acid (H ₃ PO ₄ ), chromium oxide (CrO ₃ ) and Vertical electrode type using a nitride semiconductor substrate, characterized in that it is carried out using a mixed solution of any one or a combination thereof (4H ₃ PO ₄ + 4CH ₃ COOH + HNO ₃ + H ₂ O) as an etching solution Method of manufacturing a light emitting device. The method of claim 5, The dry etching is a method of manufacturing a vertical electrode type light emitting device using a nitride semiconductor substrate, characterized in that performed by the ICP / RIE or RIE method using at least one of BCL ₃ , Cl ₂ , HBr, Ar as an etching gas. The method of claim 6, In step a, in order to prevent the nitride semiconductor layer from being damaged by wet etching, a nitride semiconductor (In _x (Ga _y Al _1-y ) N) is formed on a portion of the surface of the sapphire substrate before growing the nitride semiconductor on the sapphire substrate. (1≥x≥0, 1≥y≥0, x + y> 0), and deposit an etch stop layer comprising any one of a silicon oxide cluster (SiO ₂ cluster) or a silicon nitride cluster (SiN _x cluster). A method of manufacturing a vertical electrode type light emitting device using a nitride semiconductor substrate, characterized in that it further comprises a step. The method of claim 8, Before the step c, the etching stop layer using a hydrofluoric acid (Buffer Oxide Etchant) as an etching solution further comprising the step of etching the vertical electrode type light emitting device using a nitride semiconductor substrate. delete The method of claim 1, In the step b, growing the nitride semiconductor layer on the nitride semiconductor substrate is nitride, characterized in that performed by any one or a combination of metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE) A manufacturing method of a vertical electrode light emitting device using a semiconductor substrate. delete delete The method of claim 1, Before forming the first electrode, any one of ITO (Indium Tin Oxide), ZnO (Zinc Oxide), SnO ₂ (Tin Oxide), and AZO (Al doped ZnO) is formed to cover the entire surface of the nitride semiconductor substrate. A method of manufacturing a vertical electrode type light emitting device using a nitride semiconductor substrate, characterized in that it further comprises forming. a. A nitride semiconductor (In _x (Ga _y Al _1-y ) N (1≥x≥0, 1≥y≥0, x doped with any one of Si, B, and Mg, which constitutes a nitride semiconductor substrate on a sapphire base substrate) + y>0)); b. A nitride semiconductor layer (In _x (Ga _y Al _1-y ) N (1≥x≥0, 1≥y≥0, x + y) including a first conductive layer, a light emitting layer, and a second conductive layer on the nitride semiconductor substrate ≫0)); c. Etching the sapphire base substrate used as the growth substrate of the nitride semiconductor to remove at least a portion thereof; d. Forming a first electrode formed of a metal layer including at least one of Ti, Al, Ni, Au, and Pt under the nitride semiconductor substrate; and e. Forming a second electrode on the second conductive contact layer formed of a metal layer including at least one of Ti, Al, Ni, Au, and Pt; Method of manufacturing a vertical electrode type light emitting device using a nitride semiconductor substrate comprising a. The method of claim 15, The nitride semiconductor constituting the nitride semiconductor substrate is doped at a concentration of 10 ¹⁵ / cm 3 to 10 ²¹ / cm 3 The manufacturing method of the vertical electrode type light emitting device using the nitride semiconductor substrate. The method of claim 16, The nitride semiconductor constituting the nitride semiconductor substrate is any one of an n-type nitride semiconductor and a p-type nitride semiconductor having a resistivity of 10 ⁻² Ωcm or less. Manufacturing method. The method of claim 15, In the step a, the growth of the nitride semiconductor of the nitride semiconductor substrate is performed by vapor phase epitaxy (VPE), hydride vapor phase epitaxy (HVPE), metal organic vapor phase epitaxy (MOVPE), metal organic chemical vapor deposition (MOCVD), and molecular beam (MBE). A method for manufacturing a vertical electrode type light emitting device using a nitride semiconductor substrate, characterized in that it is carried out by any one or a combination of epitaxy (LPCVD), low pressure chemical vapor deposition (LPCVD), liquid phase epitaxy (LPE). delete The method of claim 15, In the step b, the growth of the nitride semiconductor layer is performed using a method of any one or a combination of metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), or the like, and a vertical electrode type using a nitride semiconductor substrate. Method of manufacturing a light emitting device. The method of claim 15, The sapphire substrate used to grow the nitride semiconductor of the nitride semiconductor substrate is a back-polished double-sided substrate manufacturing method of a vertical electrode type light emitting device using a nitride semiconductor substrate. The method of claim 21, In the step c, the removal of the sapphire substrate used as the growth substrate of the nitride semiconductor layer is performed in a combination comprising at least one of wet etching or dry etching, vertical electrode type light emitting using a nitride semiconductor substrate Method of manufacturing the device. The method of claim 22, The wet etching is hydrochloric acid (HCl), nitric acid (HNO ₃ ), potassium hydroxide (KOH), sodium hydroxide (NaOH), sulfuric acid (H ₂ SO ₄ ), phosphoric acid (H ₃ PO ₄ ), chromium oxide (CrO ₃ ) and Vertical electrode type using a nitride semiconductor substrate, characterized in that it is carried out using a mixed solution of any one or a combination thereof (4H ₃ PO ₄ + 4CH ₃ COOH + HNO ₃ + H ₂ O) as an etching solution Method of manufacturing a light emitting device. The method of claim 22, The dry etching is a method of manufacturing a vertical electrode type light emitting device using a nitride semiconductor substrate, characterized in that performed by the ICP / RIE or RIE method using at least one of BCL ₃ , Cl ₂ , HBr, Ar as an etching gas. The method of claim 23, wherein In step a, in order to prevent the nitride semiconductor layer from being damaged by wet etching, a nitride semiconductor (In _x (Ga _y Al _1-y ) N) is formed on a portion of the surface of the sapphire substrate before growing the nitride semiconductor on the sapphire substrate. (1≥x≥0, 1≥y≥0, x + y> 0), and deposit an etch stop layer comprising any one of a silicon oxide cluster (SiO ₂ cluster) or a silicon nitride cluster (SiN _x cluster). A method of manufacturing a vertical electrode type light emitting device using a nitride semiconductor substrate, characterized in that it further comprises a step. The method of claim 25, Before the step c, the etching stop layer using a hydrofluoric acid (Buffer Oxide Etchant) as an etching solution further comprising the step of etching the vertical electrode type light emitting device using a nitride semiconductor substrate. delete delete The method of claim 15, Before forming the first electrode, any one of ITO (Indium Tin Oxide), ZnO (Zinc Oxide), SnO ₂ (Tin Oxide), and AZO (Al doped ZnO) is formed to cover the entire surface of the nitride semiconductor substrate. A method of manufacturing a vertical electrode type light emitting device using a nitride semiconductor substrate, characterized in that it further comprises forming. The method according to any one of claims 1 to 9, 11, 14 to 18, 20 to 26, 29, A vertical electrode type light emitting device using a nitride semiconductor substrate manufactured by the method of manufacturing a vertical electrode type light emitting device using the nitride semiconductor substrate.

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