KR100769958B1 - 헤테로 접합 바이폴라 트랜지스터 및 그것을 구비하는 증폭기 - Google Patents
헤테로 접합 바이폴라 트랜지스터 및 그것을 구비하는 증폭기 Download PDFInfo
- Publication number
- KR100769958B1 KR100769958B1 KR1020060036085A KR20060036085A KR100769958B1 KR 100769958 B1 KR100769958 B1 KR 100769958B1 KR 1020060036085 A KR1020060036085 A KR 1020060036085A KR 20060036085 A KR20060036085 A KR 20060036085A KR 100769958 B1 KR100769958 B1 KR 100769958B1
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- collector
- type
- voltage
- conductive
- Prior art date
Links
- 239000012535 impurity Substances 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 24
- 230000005684 electric field Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
- H01L29/7371—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Abstract
Description
Claims (6)
- 제1도전형 콜렉터층, 제1도전형 이미터층 및 상기 제1도전형 콜렉터층과 상기 제1도전형 이미터층 사이에 개재하는 제2도전형 베이스층을 구비하는 헤테로 접합 바이폴라 트랜지스터로서,상기 제1도전형 콜렉터층은,상기 제2도전형 베이스층에 접하는 제1도전형 제1콜렉터층과,상기 제1도전형 제1콜렉터층에 접하는 제1도전형 제2콜렉터층을 갖고,상기 제1도전형 제1콜렉터층은, 사용시 상정되는 가장 낮은 콜렉터 전압으로서, 최저 전압보다 높고 최고 전압보다 낮은 표준 콜렉터 전압보다 낮은 최저 콜렉터 전압을 공급했을 경우에 모든 영역이 공핍화하고,상기 제1도전형 제2콜렉터층은, 사용시 상정되는 가장 높은 콜렉터 전압으로서, 상기 표준 콜렉터 전압보다 높은 최고 콜렉터 전압에 근거하는 공간 전하 농도보다 낮은 캐리어 농도를 갖고, 상기 최고 콜렉터 전압을 공급했을 경우에 모든 영역이 공핍화 하고,상기 제1도전형 제2콜렉터층은, 상기 표준 콜렉터 전압에 근거하는 공간 전하 농도보다 높은 캐리어 농도를 갖고, 상기 표준 콜렉터 전압을 공급했을 경우에 형성되는 공핍층 두께의 비율이 상기 제1도전형 콜렉터층 전체에 형성되는 공핍층 두께의 20% 이하인 것을 특징으로 하는 헤테로 접합 바이폴라 트랜지스터.
- 삭제
- 제 1항에 있어서,상기 제1도전형 제2콜렉터층에 접하는 제1도전형 고캐리어 농도 콜렉터 콘택층과,상기 제1도전형 제2콜렉터층-상기 제1도전형 고캐리어 농도 콜렉터 콘택층 사이에 개재하고, 상기 제1도전형 제2콜렉터층보다 높고 상기 제1도전형 고캐리어 농도 콜렉터 콘택층보다 낮은 불순물 농도를 가지는 제1도전형 전계 완화층을 더 구비하는 것을 특징으로 하는 헤테로 접합 바이폴라 트랜지스터.
- 제 1항에 기재된 헤테로 접합 바이폴라 트랜지스터를 증폭 소자로서 구비하는 것을 특징으로 하는 증폭기.
- 삭제
- 제 3항에 기재된 헤테로 접합 바이폴라 트랜지스터를 증폭 소자로서 구비하는 것을 특징으로 하는 증폭기.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005123525A JP2006303222A (ja) | 2005-04-21 | 2005-04-21 | ヘテロ接合バイポーラトランジスタおよびそれを備える増幅器 |
JPJP-P-2005-00123525 | 2005-04-21 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20060110837A KR20060110837A (ko) | 2006-10-25 |
KR100769958B1 true KR100769958B1 (ko) | 2007-10-25 |
Family
ID=37185947
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020060036085A KR100769958B1 (ko) | 2005-04-21 | 2006-04-21 | 헤테로 접합 바이폴라 트랜지스터 및 그것을 구비하는 증폭기 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20060237747A1 (ko) |
JP (1) | JP2006303222A (ko) |
KR (1) | KR100769958B1 (ko) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005197405A (ja) * | 2004-01-06 | 2005-07-21 | Toshiba Corp | 半導体装置とその製造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03105925A (ja) * | 1989-09-19 | 1991-05-02 | Fujitsu Ltd | 半導体装置 |
US5329145A (en) | 1991-10-15 | 1994-07-12 | Matsushita Electric Industrial Co., Ltd. | Heterojunction bipolar transistor and its integration method |
KR20020065888A (ko) * | 2000-10-26 | 2002-08-14 | 마츠시다 덴코 가부시키가이샤 | 전계방사형 전자원 |
KR20030063075A (ko) * | 2002-01-18 | 2003-07-28 | 엔이씨 가꼬오부쯔 디바이스 가부시끼가이샤 | 헤테로접합 바이폴라트랜지스터 및 이를 이용한반도체집적회로장치 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2587826B2 (ja) * | 1987-03-27 | 1997-03-05 | 日本電信電話株式会社 | バイポ−ラトランジスタとその製造方法 |
US4821082A (en) * | 1987-10-30 | 1989-04-11 | International Business Machines Corporation | Heterojunction bipolar transistor with substantially aligned energy levels |
JPH02291135A (ja) * | 1989-05-01 | 1990-11-30 | Sumitomo Electric Ind Ltd | ヘテロ接合バイポーラトランジスタ |
US5171697A (en) * | 1991-06-28 | 1992-12-15 | Texas Instruments Incorporated | Method of forming multiple layer collector structure for bipolar transistors |
JPH0541388A (ja) * | 1991-08-05 | 1993-02-19 | Nippon Telegr & Teleph Corp <Ntt> | ヘテロバイポ−ラトランジスタ |
KR20040030942A (ko) * | 2001-08-07 | 2004-04-09 | 코닌클리즈케 필립스 일렉트로닉스 엔.브이. | 바이폴라 트랜지스터 및 바이폴라 트랜지스터 제조 방법 |
US6809400B2 (en) * | 2003-03-14 | 2004-10-26 | Eric Harmon | Composite pinin collector structure for heterojunction bipolar transistors |
JP2005197440A (ja) * | 2004-01-07 | 2005-07-21 | Matsushita Electric Ind Co Ltd | 半導体装置 |
-
2005
- 2005-04-21 JP JP2005123525A patent/JP2006303222A/ja active Pending
-
2006
- 2006-03-30 US US11/392,572 patent/US20060237747A1/en not_active Abandoned
- 2006-04-21 KR KR1020060036085A patent/KR100769958B1/ko active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03105925A (ja) * | 1989-09-19 | 1991-05-02 | Fujitsu Ltd | 半導体装置 |
US5329145A (en) | 1991-10-15 | 1994-07-12 | Matsushita Electric Industrial Co., Ltd. | Heterojunction bipolar transistor and its integration method |
KR20020065888A (ko) * | 2000-10-26 | 2002-08-14 | 마츠시다 덴코 가부시키가이샤 | 전계방사형 전자원 |
KR20030063075A (ko) * | 2002-01-18 | 2003-07-28 | 엔이씨 가꼬오부쯔 디바이스 가부시끼가이샤 | 헤테로접합 바이폴라트랜지스터 및 이를 이용한반도체집적회로장치 |
Also Published As
Publication number | Publication date |
---|---|
KR20060110837A (ko) | 2006-10-25 |
US20060237747A1 (en) | 2006-10-26 |
JP2006303222A (ja) | 2006-11-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100508894B1 (ko) | 헤테로접합 바이폴라트랜지스터 및 이를 이용한반도체집적회로장치 | |
US20070023783A1 (en) | Semiconductor device | |
TWI643337B (zh) | 具有能隙漸變的電洞阻隔層之異質接面雙極性電晶體結構 | |
JP2003533887A (ja) | 電荷キャリヤ抽出トランジスタ | |
US9019028B2 (en) | Integrated epitaxial structure for compound semiconductor devices | |
US6563145B1 (en) | Methods and apparatus for a composite collector double heterojunction bipolar transistor | |
US7304333B2 (en) | Semiconductor device | |
US7821037B2 (en) | Heterojunction bipolar transistor | |
CN115188805A (zh) | 异质结双极晶体管 | |
KR100769958B1 (ko) | 헤테로 접합 바이폴라 트랜지스터 및 그것을 구비하는 증폭기 | |
US6809400B2 (en) | Composite pinin collector structure for heterojunction bipolar transistors | |
US6459103B1 (en) | Negative-differential-resistance heterojunction bipolar transistor with topee-shaped current-voltage characteristics | |
JP4789489B2 (ja) | マイクロ波モノリシック集積回路 | |
US7573080B1 (en) | Transient suppression semiconductor device | |
CA2407364C (en) | Bipolar transistor | |
WO1987000692A1 (en) | Semiconductor device | |
US8921213B2 (en) | Method of making less electric current dependence of electric current gain of semiconductor device | |
CN103489859B (zh) | 化合物半导体组件晶圆整合结构 | |
US10818781B2 (en) | Heterojunction bipolar transistor structure with a bandgap graded hole barrier layer | |
Tsai et al. | Investigation of AlInAs/GaInAs heterostructure-emitter-confinement bipolar transistors | |
JP2004022818A (ja) | ダブルへテロ接合バイポーラトランジスタ | |
JP2010287603A (ja) | 化合物半導体素子及びその製造方法 | |
Tsai et al. | Investigation of InP/InGaAs superlattice-emitter resonant tunneling bipolar transistor at room temperature | |
US9018685B2 (en) | Semiconductor structure for an electronic interruptor power switch | |
Tsai | High performances of InP/InGaAs heterojunction bipolar transistors with a δ-doped sheet between two spacer layers |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
G170 | Re-publication after modification of scope of protection [patent] | ||
FPAY | Annual fee payment |
Payment date: 20120924 Year of fee payment: 6 |
|
FPAY | Annual fee payment |
Payment date: 20130924 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20141001 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20150917 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20160921 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20170920 Year of fee payment: 11 |