KR100757128B1 - 플래시 메모리를 이용한 메모리 카드 및 그 제어 방법 - Google Patents

플래시 메모리를 이용한 메모리 카드 및 그 제어 방법 Download PDF

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Publication number
KR100757128B1
KR100757128B1 KR1020060060629A KR20060060629A KR100757128B1 KR 100757128 B1 KR100757128 B1 KR 100757128B1 KR 1020060060629 A KR1020060060629 A KR 1020060060629A KR 20060060629 A KR20060060629 A KR 20060060629A KR 100757128 B1 KR100757128 B1 KR 100757128B1
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South Korea
Prior art keywords
block
memory
centralized management
blocks
management information
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English (en)
Korean (ko)
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KR20070003673A (ko
Inventor
다까시 오시마
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가부시끼가이샤 도시바
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Publication of KR20070003673A publication Critical patent/KR20070003673A/ko
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/14—Error detection or correction of the data by redundancy in operation
    • G06F11/1402—Saving, restoring, recovering or retrying
    • G06F11/1415—Saving, restoring, recovering or retrying at system level
    • G06F11/1417—Boot up procedures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/20—Initialising; Data preset; Chip identification
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
  • Debugging And Monitoring (AREA)
KR1020060060629A 2005-07-01 2006-06-30 플래시 메모리를 이용한 메모리 카드 및 그 제어 방법 Expired - Fee Related KR100757128B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2005-00193958 2005-07-01
JP2005193958A JP2007011872A (ja) 2005-07-01 2005-07-01 メモリカードとその制御方法

Publications (2)

Publication Number Publication Date
KR20070003673A KR20070003673A (ko) 2007-01-05
KR100757128B1 true KR100757128B1 (ko) 2007-09-10

Family

ID=37591158

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020060060629A Expired - Fee Related KR100757128B1 (ko) 2005-07-01 2006-06-30 플래시 메모리를 이용한 메모리 카드 및 그 제어 방법

Country Status (4)

Country Link
US (1) US7519876B2 (enExample)
JP (1) JP2007011872A (enExample)
KR (1) KR100757128B1 (enExample)
TW (1) TW200715195A (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4460967B2 (ja) 2004-07-23 2010-05-12 株式会社東芝 メモリカード、不揮発性半導体メモリ、及び半導体メモリの制御方法
JP2007011872A (ja) 2005-07-01 2007-01-18 Toshiba Corp メモリカードとその制御方法
KR100780963B1 (ko) * 2006-11-03 2007-12-03 삼성전자주식회사 메모리 카드 및 메모리 카드의 구동 방법
US7861139B2 (en) 2007-01-26 2010-12-28 Micron Technology, Inc. Programming management data for NAND memories
JP5142685B2 (ja) * 2007-11-29 2013-02-13 株式会社東芝 メモリシステム
KR101492116B1 (ko) * 2008-01-24 2015-02-09 삼성디스플레이 주식회사 커넥터 및 이를 갖는 표시장치
TWI467579B (zh) * 2011-01-14 2015-01-01 Mstar Semiconductor Inc 電子裝置及其記憶體控制方法以及相關電腦可讀取儲存媒體
JP7143735B2 (ja) * 2018-11-15 2022-09-29 Tdk株式会社 メモリコントローラ、及びメモリシステム

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR940026970A (ko) * 1993-05-18 1994-12-10 김광호 전기적으로 소거가능한 불휘발성 메모리의 제어방법 및 그 장치
KR20030000590A (ko) * 2001-06-26 2003-01-06 삼성전자 주식회사 시프트 리던던시 회로를 갖는 반도체 메모리 장치
JP2003140980A (ja) 2001-10-31 2003-05-16 Hitachi Ltd 記録装置
JP2004103032A (ja) 2003-10-14 2004-04-02 Sony Corp データ管理装置、データ管理方法、不揮発性メモリ、不揮発性メモリを有する記憶装置及びデータ処理システム
KR20040038262A (ko) * 2002-10-31 2004-05-08 주식회사 현대시스콤 플래시 디스크를 이용한 멀티 부팅 방법

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69421103T2 (de) * 1993-01-22 2000-06-08 Matsushita Electric Industrial Co., Ltd. Programmgesteuertes Prozessor
JP3472008B2 (ja) 1996-01-16 2003-12-02 株式会社東芝 フラッシュメモリ管理方法
US6330028B1 (en) * 1996-02-15 2001-12-11 Casio Computer Co., Ltd. Electronic image pickup device which is operable even when management information related to recording/reproducing image data is not readable
JP3718578B2 (ja) * 1997-06-25 2005-11-24 ソニー株式会社 メモリ管理方法及びメモリ管理装置
JPH11185459A (ja) * 1997-12-24 1999-07-09 Sony Corp 記録システム、記録装置
KR100429179B1 (ko) * 1998-07-01 2004-06-16 엘지전자 주식회사 광기록매체의결함영역관리장치및그방법
US6407949B1 (en) 1999-12-17 2002-06-18 Qualcomm, Incorporated Mobile communication device having integrated embedded flash and SRAM memory
IT1318979B1 (it) * 2000-10-06 2003-09-19 St Microelectronics Srl Architettura di memoria a semiconduttore
JP4323707B2 (ja) * 2000-10-25 2009-09-02 富士通マイクロエレクトロニクス株式会社 フラッシュメモリの欠陥管理方法
TW539950B (en) 2000-12-28 2003-07-01 Sony Corp Data recording device and data write method for flash memory
US6707749B2 (en) 2002-08-14 2004-03-16 Intel Corporation Enabling an interim density for top boot flash memories
US7330409B2 (en) * 2003-01-13 2008-02-12 Samsung Electronics Co., Ltd. Disc with temporary defect management area, and disc defect management method and apparatus therefor
JP4460967B2 (ja) 2004-07-23 2010-05-12 株式会社東芝 メモリカード、不揮発性半導体メモリ、及び半導体メモリの制御方法
JP2007011872A (ja) 2005-07-01 2007-01-18 Toshiba Corp メモリカードとその制御方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR940026970A (ko) * 1993-05-18 1994-12-10 김광호 전기적으로 소거가능한 불휘발성 메모리의 제어방법 및 그 장치
KR20030000590A (ko) * 2001-06-26 2003-01-06 삼성전자 주식회사 시프트 리던던시 회로를 갖는 반도체 메모리 장치
JP2003140980A (ja) 2001-10-31 2003-05-16 Hitachi Ltd 記録装置
KR20040038262A (ko) * 2002-10-31 2004-05-08 주식회사 현대시스콤 플래시 디스크를 이용한 멀티 부팅 방법
JP2004103032A (ja) 2003-10-14 2004-04-02 Sony Corp データ管理装置、データ管理方法、不揮発性メモリ、不揮発性メモリを有する記憶装置及びデータ処理システム

Also Published As

Publication number Publication date
US7519876B2 (en) 2009-04-14
KR20070003673A (ko) 2007-01-05
US20070005875A1 (en) 2007-01-04
JP2007011872A (ja) 2007-01-18
TWI317099B (enExample) 2009-11-11
TW200715195A (en) 2007-04-16

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