KR100756139B1 - 노광장치 및 그것을 이용한 디바이스의 제조방법 - Google Patents

노광장치 및 그것을 이용한 디바이스의 제조방법 Download PDF

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Publication number
KR100756139B1
KR100756139B1 KR1020060036492A KR20060036492A KR100756139B1 KR 100756139 B1 KR100756139 B1 KR 100756139B1 KR 1020060036492 A KR1020060036492 A KR 1020060036492A KR 20060036492 A KR20060036492 A KR 20060036492A KR 100756139 B1 KR100756139 B1 KR 100756139B1
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KR
South Korea
Prior art keywords
mask
optical system
mirror
light
projection optical
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Expired - Fee Related
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KR1020060036492A
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English (en)
Korean (ko)
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KR20060112612A (ko
Inventor
아키히로 나카우치
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캐논 가부시끼가이샤
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Publication of KR20060112612A publication Critical patent/KR20060112612A/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Lenses (AREA)
KR1020060036492A 2005-04-25 2006-04-24 노광장치 및 그것을 이용한 디바이스의 제조방법 Expired - Fee Related KR100756139B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005126391A JP2006303370A (ja) 2005-04-25 2005-04-25 露光装置及びそれを用いたデバイス製造方法
JPJP-P-2005-00126391 2005-04-25

Publications (2)

Publication Number Publication Date
KR20060112612A KR20060112612A (ko) 2006-11-01
KR100756139B1 true KR100756139B1 (ko) 2007-09-05

Family

ID=36754269

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020060036492A Expired - Fee Related KR100756139B1 (ko) 2005-04-25 2006-04-24 노광장치 및 그것을 이용한 디바이스의 제조방법

Country Status (4)

Country Link
US (1) US7602473B2 (enExample)
EP (1) EP1717639A3 (enExample)
JP (1) JP2006303370A (enExample)
KR (1) KR100756139B1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8189172B2 (en) * 2007-06-14 2012-05-29 Asml Netherlands B.V. Lithographic apparatus and method
US8692974B2 (en) * 2007-06-14 2014-04-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method using pupil filling by telecentricity control
JP2009253214A (ja) * 2008-04-10 2009-10-29 Canon Inc 露光装置及びデバイス製造方法
KR101484937B1 (ko) * 2008-07-02 2015-01-21 삼성전자주식회사 위상반전 마스크의 위상 측정 방법 및 이를 수행하기 위한장치
DE102012218221A1 (de) 2012-10-05 2014-04-10 Carl Zeiss Smt Gmbh Monitorsystem zum Bestimmen von Orientierungen von Spiegelelementen und EUV-Lithographiesystem
CN103324036A (zh) * 2013-07-04 2013-09-25 中国科学院光电技术研究所 一种投影物镜倍率及畸变的检测装置及方法
NL2018989A (en) 2016-06-03 2017-12-05 Asml Netherlands Bv Patterning device
DE102016212477A1 (de) * 2016-07-08 2018-01-11 Carl Zeiss Smt Gmbh Messverfahren und Messsystem zur interferometrischen Vermessung der Abbildungsqualität eines optischen Abbildungssystems
JP6924235B2 (ja) * 2019-09-19 2021-08-25 キヤノン株式会社 露光方法、露光装置、物品製造方法、および半導体デバイスの製造方法
DE102024202926A1 (de) * 2024-03-27 2025-03-06 Carl Zeiss Smt Gmbh Verfahren zur Wellenfrontvermessung eines Projektionssystems

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030010568A (ko) * 2001-07-27 2003-02-05 캐논 가부시끼가이샤 조명계, 투영노광장치 및 디바이스의 제조방법
KR20050028793A (ko) * 2003-09-17 2005-03-23 캐논 가부시끼가이샤 조명광학계 및 노광장치

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US5719704A (en) * 1991-09-11 1998-02-17 Nikon Corporation Projection exposure apparatus
JP3313932B2 (ja) 1995-04-27 2002-08-12 キヤノン株式会社 投影露光装置
US5835217A (en) * 1997-02-28 1998-11-10 The Regents Of The University Of California Phase-shifting point diffraction interferometer
JP4238390B2 (ja) * 1998-02-27 2009-03-18 株式会社ニコン 照明装置、該照明装置を備えた露光装置および該露光装置を用いて半導体デバイスを製造する方法
US6833904B1 (en) * 1998-02-27 2004-12-21 Nikon Corporation Exposure apparatus and method of fabricating a micro-device using the exposure apparatus
JP2000097622A (ja) 1998-09-22 2000-04-07 Nikon Corp 干渉計
JP2001227909A (ja) * 2000-02-17 2001-08-24 Nikon Corp 点回折干渉計、反射鏡の製造方法及び投影露光装置
TW550377B (en) * 2000-02-23 2003-09-01 Zeiss Stiftung Apparatus for wave-front detection
US6859263B2 (en) * 2001-08-30 2005-02-22 Euv Llc Apparatus for generating partially coherent radiation
JP2003302205A (ja) 2002-02-07 2003-10-24 Nikon Corp シアリング干渉測定方法及びシアリング干渉計、投影光学系の製造方法、投影光学系、及び投影露光装置
JP3720788B2 (ja) * 2002-04-15 2005-11-30 キヤノン株式会社 投影露光装置及びデバイス製造方法
EP1387220A3 (en) * 2002-07-29 2007-01-03 Canon Kabushiki Kaisha Adjustment method and apparatus of optical system, and exposure apparatus
JP4266673B2 (ja) * 2003-03-05 2009-05-20 キヤノン株式会社 収差測定装置
JP4464166B2 (ja) * 2004-02-27 2010-05-19 キヤノン株式会社 測定装置を搭載した露光装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030010568A (ko) * 2001-07-27 2003-02-05 캐논 가부시끼가이샤 조명계, 투영노광장치 및 디바이스의 제조방법
KR20050002699A (ko) * 2001-07-27 2005-01-10 캐논 가부시끼가이샤 조명계, 투영노광장치 및 디바이스의 제조방법
KR20050028793A (ko) * 2003-09-17 2005-03-23 캐논 가부시끼가이샤 조명광학계 및 노광장치

Also Published As

Publication number Publication date
JP2006303370A (ja) 2006-11-02
EP1717639A3 (en) 2009-07-08
US7602473B2 (en) 2009-10-13
KR20060112612A (ko) 2006-11-01
EP1717639A2 (en) 2006-11-02
US20060238737A1 (en) 2006-10-26

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