KR100733650B1 - Edge bead remover - Google Patents
Edge bead remover Download PDFInfo
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- KR100733650B1 KR100733650B1 KR1020000082464A KR20000082464A KR100733650B1 KR 100733650 B1 KR100733650 B1 KR 100733650B1 KR 1020000082464 A KR1020000082464 A KR 1020000082464A KR 20000082464 A KR20000082464 A KR 20000082464A KR 100733650 B1 KR100733650 B1 KR 100733650B1
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- ether
- bead remover
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/34—Imagewise removal by selective transfer, e.g. peeling away
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- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
본 발명의 엣지비드 리무버는, α-히드록시이소부티르산메틸과 하기 일반식 (Ⅰ) :The edge bead remover of this invention is alpha-hydroxyisobutyrate methyl, and the following general formula (I):
(R는 수소 또는 아세틸기, R1은 수소 또는 메틸기, R2는 탄소수 1∼4의 알킬기, n은 0∼3의 정수를 나타낸다. 단 R이 수소일 때 n은 1∼3의 정수이다)로 표시되는 화합물을 포함하는 용매조성물이다.(R is hydrogen or acetyl group, R 1 is hydrogen or methyl group, R 2 is an alkyl group having 1 to 4 carbon atoms, n is an integer of 0 to 3. However, when R is hydrogen, n is an integer of 1 to 3) It is a solvent composition containing the compound represented by.
이 엣지비드 리무버는 레지스트 용해능력이 높고, 소량의 사용량 또한 단시간의 세정시간으로 불요 레지스트를 충분히 제거할 수가 있다.This edge bead remover has a high resist dissolving ability, and a small amount of use can sufficiently remove the unnecessary resist with a short cleaning time.
또 상기 엣지비드 리무버는 인체에 대한 안전성이 높고, 유기용매에 있을 수 있는 불쾌한 냄새가 대단히 적고 작업성도 우수하다.In addition, the edge bead remover has high safety for the human body, very little unpleasant odor that may be present in the organic solvent and excellent workability.
Description
본 발명은 신규의 엣지비드 리무버(edge bead remover) 및 이 엣지비드 리무버를 사용해서 레지스트-형성 조성물(resist-forming composition) 도포시 혹은 도포후의 전자부품용 기판으로부터 불필요한 레지스트를 제거하는 방법에 관한 것이다.The present invention relates to a novel edge bead remover and a method for removing unnecessary resist from an electronic component substrate during or after applying a resist-forming composition using the edge bead remover. .
레지스트-형성 조성물의 도포에는 스핀 도포, 롤 도포, 리버스 롤 도포, 캐스트 도포(cast-coating), 독터 도포(doctor-coating), 딥 도포(dip-coating), 랜드 도포(land-coating) 등의 각종의 방법이 채용되고 있고, 집적회로소자의 제조에 있어서는, 스핀 도포가 선택된다.Application of the resist-forming composition includes spin coating, roll coating, reverse roll coating, cast-coating, doctor-coating, dip-coating, land-coating, and the like. Various methods are employed, and spin coating is selected in the manufacture of integrated circuit devices.
스핀 도포법에서는 기판상에 적하된 소정 부피의 레지스트-형성 액체 조성물이 기판의 회전에 의해 기판 외부 원주방향으로 퍼져나가고, 과잉의 레지스트-형성 액체 조성물은 기판 엣지에서 비산 제거(spun off)됨으로써 기판 중심부에 원하는 두께를 갖는 레지스트막이 형성된다.In the spin coating method, a predetermined volume of the resist-forming liquid composition deposited on the substrate is spread out in the circumferential direction outside the substrate by the rotation of the substrate, and the excess resist-forming liquid composition is spun off at the substrate edge so that the substrate A resist film having a desired thickness is formed in the center portion.
그러나 스핀 도포법은, 레지스트-형성 조성물의 일부가 기판의 엣지 주변에 퍼져서 기판의 배면에까지 도달하거나 혹은 기판의 외부 원주둘레 부분에 도포된 레지스트-형성 조성물이 기판의 다른 부분보다 두껍게 되는 엣지비드가 형성된다는 결점이 있다.However, spin coating methods involve an edge bead in which a portion of the resist-forming composition spreads around the edge of the substrate to reach the back side of the substrate or the resist-forming composition applied to the outer circumferential portion of the substrate becomes thicker than other portions of the substrate. There is a drawback that it is formed.
이와 같은 엣지비드와 불필요한 레지스트는 다음 공정의 열처리에 의해 물러져서 기판의 운송 중에 작은 비늘 조각상으로 박리되고, 이것이 장치의 오염을 일으킨다. 박리된 레지스트는 기판상의 레지스트 표면에 부착하여 고품질의 반도체 소자를 제조하는데 심각한 문제를 일으킨다.Such edge beads and unnecessary resist are removed by heat treatment in the next process and peeled into small scale pieces during transportation of the substrate, which causes contamination of the device. The exfoliated resist is attached to the resist surface on the substrate and causes serious problems in manufacturing high quality semiconductor devices.
그러므로 기판으로부터 불필요한 엣지비드를 제거하고 기판 측면 혹은 배면으로부터 불필요한 레지스트를 제거할 필요가 있다.Therefore, it is necessary to remove unnecessary edge beads from the substrate and to remove unnecessary resist from the side or back side of the substrate.
스핀 도포법과 마찬가지로, 다른 도포법도 불필요한 레지스트가 부착되는 것과 관련된 문제가 있다.As with the spin coating method, other coating methods have a problem associated with deposition of unnecessary resist.
이러한 불필요한 엣지비드 및 레지스트의 제거에 사용되는 용매를 「엣지비드 리무버」라 한다.The solvent used for removing such unnecessary edge beads and resist is referred to as "edge bead remover".
미국특허 제5,814,433호에 기재되어 있는 바와 같이, 엣지비드 리무버는 패턴(imagewise) 노광 전의 레지스트 제거에 사용되고, 레지스트 박리제와는 사용 시기뿐 아니라 요구되는 특성에 있어서도 현저히 다른데, 이는 레지스트 박리제는 에칭 공정 종료후 쓰이지 않는 레지스트 패턴을 제거하는데 사용되기 때문이다.As described in US Pat. No. 5,814,433, edge bead removers are used to remove resist prior to imagewise exposure and are significantly different from the resist release agent in terms of the required properties as well as the timing of use, which is the end of the etching process. This is because it is used to remove an unused resist pattern.
엣지비드 리무버에 사용되고 있는 용매로서 일본국 특개소 63-69563호 공보에서는 1-메틸-2-피롤리돈, 아세톤 및 크실렌을 제안한다. 일본국 특개평 7-146562호 공보에서는, 종래에 알려진 용매와 함께 레지스트 제거용 세정 용매로서 에틸렌글리콜모노알킬에테르, 에틸렌글리콜 모노알킬에테르 아세테이트, 프로필렌글리콜 모노알킬에테르 및 프로필렌글리콜 모노알킬아세테이트 등의 에테르나 아세테이트류; 아세톤, 메틸에틸케톤, 메틸이소부틸케톤 및 시클로헥사논 등의 케톤류; 락트산메틸, 락트산에틸, 아세트산메틸, 아세트산에틸, 아세트산부틸, 3-메톡시프로피온산메틸, 3-에톡시프로피온산메틸 및 3-에톡시프로피온산에틸 등의 에스테르류 및 알콕시카르복실레이트 혹은 이들의 혼합물 등이 기술되어 있다.Japanese Unexamined Patent Publication No. 63-69563 proposes 1-methyl-2-pyrrolidone, acetone and xylene as a solvent used in edge bead removers. Japanese Patent Application Laid-Open No. 7-146562 discloses an ether such as ethylene glycol monoalkyl ether, ethylene glycol monoalkyl ether acetate, propylene glycol monoalkyl ether, and propylene glycol monoalkyl acetate as a cleaning solvent for removing a resist together with a conventionally known solvent. B acetates; Ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone and cyclohexanone; Esters such as methyl lactate, ethyl lactate, methyl acetate, ethyl acetate, butyl acetate, methyl 3-methoxypropionate, methyl 3-ethoxypropionate and ethyl 3-ethoxypropionate and alkoxycarboxylates or mixtures thereof Described.
그러나 종래의 세정제는 어떤 것은 레지스트에 대한 용해능력이 충분하지 않아서, 세정시에 잔류물이나 석출물이 생기기 쉽고, 충분한 세정을 행하기 위해서는 오랜 시간 또는 다량의 세정제가 필요하게 된다.However, some conventional cleaning agents do not have sufficient dissolving ability to resist, and residues or precipitates are liable to be generated at the time of cleaning, and a long time or a large amount of cleaning agents are required to perform sufficient cleaning.
휘발성이 적은 세정제는 건조하는데 오랜 시간이 필요하여 실제 사용하는데 불리하다. 역으로 대부분의 케톤류 및 에스테르류는 증기압이 높아 작업성이 나빠진다.Less volatile cleaning agents require a long time to dry and are disadvantageous for practical use. On the contrary, most ketones and esters have high vapor pressure, resulting in poor workability.
더욱이 용해력이 높은 에틸렌글리콜계 용매를 포함하는 많은 용매는 어느 정도 독성을 가지며 불쾌한 냄새가 난다. 그러므로 우수한 용해성과, 인체에 대한 보다 우수한 안전성을 동시에 만족시키는 세정제가 요구되고 있다.Moreover, many solvents, including highly soluble ethylene glycol solvents, are somewhat toxic and have an unpleasant odor. Therefore, there is a need for a detergent that simultaneously satisfies excellent solubility and better safety for the human body.
이러한 요구는 집적회로소자의 제조에 한정되지 않고, 컬러필터, 액정표시소자 등의 제조 분야에서도 나타난다.This demand is not limited to the manufacture of integrated circuit devices, but also appears in the manufacturing field of color filters, liquid crystal display devices and the like.
본 발명은 소량의 사용량으로 단시간에 불필요한 레지스트를 충분히 제거할 수 있는, 고용해성을 가짐과 동시에 인체에 대해서 안전성이 높고, 작업성도 우수한 엣지비드 리무버를 제공하는 것을 목적으로 한다.An object of the present invention is to provide an edge bead remover that has high solubility and good workability and excellent workability, which can sufficiently remove unnecessary resist in a short amount of time in a short time.
본 발명자 등은 예의 연구한 결과, α-히드록시이소부티르산메틸과, 하기 일반식 (Ⅰ) :
MEANS TO SOLVE THE PROBLEM As a result of earnestly research, the present inventors have shown that (alpha) -hydroxyisobutyrate and general formula (I):
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(R는 수소 또는 아세틸기, R1은 수소 또는 메틸기, R2는 탄소수 1∼4의 알킬기, n은 0∼3의 정수를 나타낸다. 단 R이 수소일 때 n은 1∼3의 정수이다)로 표시되는 화합물을 포함하는 균질용매 조성물이 소량의 사용량으로 단시간에 불필요한 레지스트를 충분히 제거할 수 있는 높은 용해성을 갖고, 인체에 대해서 안전성이 크며 유기용매에 있을 수 있는 불쾌한 냄새가 거의 없고, 작업성이 우수한 엣지비드 리무버로서 역할을 하는 것을 발견하였다. 본 발명자들은 이러한 발견에 기초하여 본 발명을 달성하였다.(R is hydrogen or acetyl group, R 1 is hydrogen or methyl group, R 2 is an alkyl group having 1 to 4 carbon atoms, n is an integer of 0 to 3. However, when R is hydrogen, n is an integer of 1 to 3) The homogeneous solvent composition comprising the compound represented by the formula has a high solubility that can sufficiently remove unnecessary resist in a short amount of time with a small amount of use, has high safety for the human body, almost no unpleasant odor that may be present in the organic solvent, and workability It has been found to act as an excellent edge bead remover. We have accomplished the present invention based on this finding.
그러므로 본 발명은 α-히드록시이소부티르산메틸과, 하기식 (Ⅰ) :
Therefore, the present invention provides α-hydroxyisobutyrate methyl and the following formula (I):
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(R는 수소 또는 아세틸기, R1은 수소 또는 메틸기, R2는 탄소수 1∼4의 알킬기, n은 0∼3의 정수를 나타낸다. 단 R이 수소일 때 n은 1∼3의 정수이다)로 표시되는 화합물의 혼합물을 포함하는 엣지비드 리무버에 관한 것이다. 본 발명은 또한 인체에 대한 안전성을 확보하고, 유기용매에 있을 수 있는 불쾌한 냄새를 가능한 한 낮게 억제하면서, 레지스트-형성 조성물의 도포시 혹은 도포 후의 전자부품용 기판으로부터 불필요한 레지스트를, 상기 엣지비드 리무버를 소량 사용하여 단시간에 제거하는 방법에 관한 것이다. (R is hydrogen or acetyl group, R 1 is hydrogen or methyl group, R 2 is an alkyl group having 1 to 4 carbon atoms, n is an integer of 0 to 3. However, when R is hydrogen, n is an integer of 1 to 3) It relates to an edge bead remover comprising a mixture of compounds represented by. The present invention also secures the safety to the human body and suppresses the unpleasant odor that may be present in the organic solvent as low as possible, while removing the unnecessary resist from the substrate for an electronic component during or after application of the resist-forming composition. A method of removing in a short time using a small amount.
상기한 일반식 (Ⅰ)의 화합물은 R이 수소인 경우에는 글리콜모노알킬에테르를, R이 아세틸기이며, n이 1∼3의 정수인 경우에는 글리콜모노알킬에테르아세테이트를, R이 아세틸기이며, n이 영(0)인 경우에는 아세트산에스테르를 나타낸다.The compound of the general formula (I) is a glycol monoalkyl ether when R is hydrogen, R is an acetyl group, when n is an integer of 1 to 3, glycol monoalkyl ether acetate, R is an acetyl group, When n is zero, an acetate ester is shown.
상기한 일반식 (Ⅰ)로 표시되는 글리콜모노알킬에테르로서는 예를 들면, 디에틸렌글리콜 모노메틸에테르, 디에틸렌글리콜 모노에틸에테르, 디에틸렌글리콜 모노부틸에테르, 트리에틸렌글리콜 모노메틸에테르, 트리에틸렌글리콜 모노에틸에테르, 트리에틸렌글리콜 모노부틸에테르, 프로필렌글리콜 모노메틸에테르, 프로필렌글리콜 모노에틸에테르, 프로필렌글리콜 모노부틸에테르, 디프로필렌글리콜 모노메틸에테르, 디프로필렌글리콜 모노에틸에테르 및 디프로필렌글리콜 모노부틸에테르를 포함할 수 있다. 특히 바람직하게는 프로필렌글리콜 모노메틸에테르이다. As glycol monoalkyl ether represented by said general formula (I), for example, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, triethylene glycol monomethyl ether, triethylene glycol Monoethyl ether, triethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monobutyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether and dipropylene glycol monobutyl ether It may include. Especially preferably, it is propylene glycol monomethyl ether.
상기한 일반식 (Ⅰ)로 표시되는 글리콜모노알킬에테르 아세테이트로서는 예를 들면, 디에틸렌글리콜 모노메틸에테르아세테이트, 디에틸렌글리콜 모노에틸에테르 아세테이트, 디에틸렌글리콜 모노부틸에테르아세테이트, 프로필렌글리콜 모노메틸에테르아세테이트, 프로필렌글리콜 모노에틸에테르아세테이트 및 프로필렌글리콜 모노부틸에테르아세테이트를 포함할 수 있다. 특히 바람직하게는 프로필렌글리콜 모노메틸에테르아세테이트이다.As glycol monoalkyl ether acetate represented by said general formula (I), for example, diethylene glycol monomethyl ether acetate, diethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, propylene glycol monomethyl ether acetate , Propylene glycol monoethyl ether acetate and propylene glycol monobutyl ether acetate. Especially preferably, it is propylene glycol monomethyl ether acetate.
상기한 일반식 (Ⅰ)로 표시되는 아세트산에스테르로서는 예를 들면, 아세트산메틸, 아세트산에틸 및 아세트산부틸 등을 들 수 있다. 특히 바람직하게는 아세트산부틸이다.As acetate acetate represented by said general formula (I), methyl acetate, ethyl acetate, butyl acetate, etc. are mentioned, for example. Especially preferably, it is butyl acetate.
상기한 글리콜모노알킬에테르, 글리콜모노알킬에테르 아세테이트 및 아세트산에스테르는 단독으로 사용해도 되고 또 2종 이상을 조합해서 사용할 수도 있다.Said glycol monoalkyl ether, glycol monoalkyl ether acetate, and acetate ester may be used independently, or may be used in combination of 2 or more type.
본 발명의 엣지비드 리무버는 α-히드록시이소부티르산메틸, 일반식 (Ⅰ)로 표시되는 화합물 및 레지스트 제거에 허용되는 선택적인 첨가물과의 균질 혼합물이 얻어지는 것이라면 어떠한 방법으로 제조해도 된다.The edge bead remover of the present invention may be prepared by any method as long as a homogeneous mixture with α-hydroxyisobutyrate, a compound represented by the general formula (I), and an optional additive acceptable for removing the resist is obtained.
예를 들면, 실온 부근의 온도에서 α-히드록시이소부티르산메틸, 일반식 (Ⅰ)로 표시되는 화합물 및 선택적인 첨가물을 균질한 혼합물이 얻어질 때까지 교반하에 기계적으로 혼합한다.For example, at a temperature near room temperature, methyl α-hydroxyisobutyrate, the compound represented by the general formula (I), and optional additives are mechanically mixed under stirring until a homogeneous mixture is obtained.
α-히드록시이소부티르산메틸과 일반식 (Ⅰ)로 표시되는 화합물의 중량혼합비는 9 : 1∼1 : 9, 바람직하게는 7 : 3∼5 : 5이다.The weight mixing ratio of the α-hydroxyisobutyrate and the compound represented by the general formula (I) is 9: 1 to 1: 9, preferably 7: 3 to 5: 5.
본 발명의 엣지비드 리무버는 필요에 따라 다른 용매를 더 함유할 수 있다.The edge bead remover of the present invention may further contain other solvents as necessary.
이러한 용매는 에테르류, 에스테르류, 케톤류, 케토에테르류, 케톨류, 알코올류, 알콕시카르복실산의 에스테르류, 디케톤류, 아미드류 및 방향족 탄화수소 중에서 선택될 수 있다. 이러한 추가 용매는 단독으로 또는 2종 이상을 조합해서 사용할 수 있다.Such solvents may be selected from ethers, esters, ketones, ketoethers, ketols, alcohols, esters of alkoxycarboxylic acids, diketones, amides and aromatic hydrocarbons. These additional solvents can be used alone or in combination of two or more thereof.
본 발명의 엣지비드 리무버는 공지의 포지티브형 레지스트 또는 네거티브형 레지스트의 어느 것에도 적용할 수 있다.The edge bead remover of the present invention can be applied to any of a known positive resist or a negative resist.
본 발명의 엣지비드 리무버가 적용될 수 있는 포지티브형 레지스트의 대표적인 예로는 퀴논디아지드계 감광성 화합물과 알칼리-가용성 수지를 기재로 한 레지스트 조성물 또는 화학증폭형 레지스트를 들 수 있다. 네거티브형 레지스트의 대표적인 예로는 폴리계피산비닐(polyvinyl cinnamate) 등의 감광성기를 갖는 고분자 화합물을 함유하는 레지스트; 방향족 아지드계 화합물을 함유하는 레지스트; 고리화 고무와 비스디아지드 화합물로부터 제조된 아지드 화합물을 함유하는 레지스트; 디아지드 수지를 함유하는 레지스트; 부가중합성 불포화 화합물을 함유하는 광중합성 조성물; 및 화학증폭형 네거티브형 레지스트 등을 들 수 있다.Representative examples of the positive resist to which the edge bead remover of the present invention can be applied include a resist composition or a chemically amplified resist based on a quinonediazide-based photosensitive compound and an alkali-soluble resin. Representative examples of the negative resist include a resist containing a high molecular compound having a photosensitive group such as polyvinyl cinnamate; A resist containing an aromatic azide compound; Resists containing azide compounds prepared from cyclized rubbers and bisdiazide compounds; Resists containing diazide resins; Photopolymerizable compositions containing addition polymerizable unsaturated compounds; And chemically amplified negative resists.
화학증폭형 네거티브 레지스트의 표면에는 선택적으로 반사방지막을 형성할 수 있다. 이때 반사방지막이 유기용매에 가용성인 것이면 레지스트의 불필요한 부분과 함께 반사방지막의 불필요한 부분도 제거할 수가 있다.An antireflection film may be selectively formed on the surface of the chemically amplified negative resist. At this time, if the antireflection film is soluble in the organic solvent, unnecessary parts of the antireflection film can be removed together with unnecessary parts of the resist.
본 발명에 효과적인 막-형성 물질로서는 페놀, 크레졸 또는 크실레놀과 알데히드류를 반응시켜 얻어지는 노볼락 수지; 아크릴 수지; 스티렌과 아크릴산의 공중합체; 히드록시스티렌 중합체; 폴리비닐히드록시벤조에이트; 및 폴리비닐히드록시벤잘과 같은 알칼리-가용성 수지를 들 수 있다.Examples of the film-forming substance effective for the present invention include novolak resins obtained by reacting phenol, cresol or xylenol with aldehydes; Acrylic resins; Copolymers of styrene and acrylic acid; Hydroxystyrene polymers; Polyvinylhydroxybenzoate; And alkali-soluble resins such as polyvinylhydroxybenzal.
또 레지스트-형성 조성물에는 필요에 따라 쿠마린계 염료 및 아조 염료와 같은 상용성 있는 염료를 첨가할 수 있다. 또한, 다른 첨가물로서, 용해 억제제 등과 같이 주된 수지를 개질시키는 부가적 수지, 가소제, 안정제 및 현상해서 얻어지는 패턴을 더욱 가시화하기 위한 착색제(coloring agent) 또는 콘트라스트 향상제(contrast sharpener)와 같이 업계에서 관용되는 것을 첨가할 수도 있다.In addition, to the resist-forming composition, compatible dyes such as coumarin-based dyes and azo dyes may be added as necessary. In addition, as other additives, conventional resins such as dissolution inhibitors, additive resins, plasticizers, stabilizers, and coloring agents or contrast sharpeners for further visualizing the pattern obtained by developing are commonly used in the industry. You may add it.
엣지비드 제거는 하기와 같이 수행한다. 레지스트-형성 용액은 스핀 도포법 공정 같은 종래의 도포법에 의해 필요에 따라 전처리된 실리콘 기판, 유리 기판 등에 도포된다.Edge bead removal is performed as follows. The resist-forming solution is applied to a silicon substrate, a glass substrate, or the like which has been pretreated as necessary by a conventional coating method such as a spin coating method.
스핀 도포 공정으로 도포되는 경우에, 레지스트-형성 용액은 보통 기판의 주변부 막의 두께가 중앙부 막의 두께보다도 큰 막으로 퍼지고, 이에 따라 엣지비드가 형성된다. 또한, 레지스트-형성 조성물의 일부는 엣지 주변에 퍼져서 기판의 엣지측이나 배면측까지 도달한다.When applied in a spin application process, the resist-forming solution usually spreads into a film in which the thickness of the peripheral film of the substrate is larger than that of the central film, whereby edge beads are formed. In addition, a portion of the resist-forming composition spreads around the edges to reach the edge side or the back side of the substrate.
본 발명의 엣지비드 리무버를 회전하는 기판상의 엣지비드에 스프레이나 백린스(back rinse) 등의 방법에 의해 도포함으로써 비드의 유동을 촉진시켜 엣지비드를 제거하고 기판상에 실질적으로 균일한 두께를 갖는 레지스트막을 남겨둘 수 있다.The edge bead remover of the present invention is applied to the edge bead on the rotating substrate by a method such as spraying or back rinse to promote the flow of beads to remove the edge bead and have a substantially uniform thickness on the substrate. The resist film can be left.
또 기판의 엣지측 및 배면 상에 존재하는 레지스트는 엣지비드 리무버를 스프레이 하여 제거할 수 있다.In addition, the resist present on the edge side and the back of the substrate can be removed by spraying the edge bead remover.
본 발명의 엣지비드 리무버는 통상 실온 부근의 온도에서 엣지비드 및/또는 다른 불필요한 레지스트를 충분히 제거하는데 유효한 양으로 도포된다.Edge bead removers of the present invention are typically applied in an amount effective to sufficiently remove edge beads and / or other unnecessary resist at temperatures near room temperature.
제거에 유효한 양은 엣지비드 리무버 및 레지스트의 화학 조성, 레지스트 막 두께 등 많은 인자에 의존하지만 최적의 양을 결정하는 것은 당업자의 기량의 범위내이다.The amount effective for removal depends on many factors such as edge bead remover and resist chemical composition, resist film thickness, but determining the optimal amount is within the skill of one of ordinary skill in the art.
본 발명의 엣지비드 리무버에 의한 레지스트 제거는 기판 상에 도포된 레지스트 막을 20∼200℃에서 0.1∼120분간 예열(prebaking)한 후에 행해도 된다.The resist removal by the edge bead remover of the present invention may be performed after the resist film applied on the substrate is prebaked at 20 to 200 ° C. for 0.1 to 120 minutes.
엣지비드 제거에 덧붙여, 본 발명의 엣지비드 리무버는 레지스트에 대하여 극히 용해성이 우수하기 때문에 스피너 컵(spinner cup) 등에 부착해서 고착된 레지스트의 세정제거에도 유효하게 이용된다.In addition to the edge bead removal, the edge bead remover of the present invention is extremely excellent in solubility with respect to the resist, and thus is effectively used for cleaning and removing the resist adhered to a spinner cup or the like.
다음에 본 발명을 실시예 및 비교예에 의해 더욱 상세히 설명하지만 본 발명은 이들 실시예에 의해 한정되는 것은 아니다.Next, the present invention will be described in more detail with reference to Examples and Comparative Examples, but the present invention is not limited to these Examples.
실시예 1∼9 및 비교예 1∼5Examples 1-9 and Comparative Examples 1-5
실리콘 웨이퍼 상에 시판되는 포지티브형 포토레지스트(도쿄오카사제, TFR-790)를 스피너를 이용하여 건조막 두께가 16000Å이 되는 양으로 도포한 후 건조 오븐에서 120℃로 30분간 예열하여 레지스트막을 형성했다.A commercially available positive photoresist (TFR-790, manufactured by Tokyo Corporation) was applied onto the silicon wafer in an amount such that the dry film thickness was 16000 kPa using a spinner, and then preheated at 120 ° C. for 30 minutes in a drying oven to form a resist film. .
이어서 표에 나타내는 조성의 각 용매 100ml를 비커에 넣고, 상기에서 건조한 웨이퍼를 10초간 용매에 침지시켰다. 용매에서 꺼내자마자 바로 공기 분사(air blowing)에 의해 건조시켰다. 각 웨이퍼 상의 막 두께(Å)를 막 두께 측정계(나노메트릭재팬사제, 나노스펙M 5000)로 측정하여 용해속도(Å/sec)를 구했다.Next, 100 ml of each solvent of the composition shown in the table was put into the beaker, and the wafer dried above was immersed in the solvent for 10 seconds. Immediately after removal from the solvent it was dried by air blowing. The film thickness on each wafer was measured by the film thickness meter (Nanometric Japan, Nano Spec M 5000), and the dissolution rate (Å / sec) was calculated | required.
실시예 및 비교예의 결과를 표 1에 나타낸다.Table 1 shows the results of Examples and Comparative Examples.
또한, 비교예 1∼3 및 5에서 사용된 용매는 실제로 엣지비드 리무버로서 사용되고 있는 것이다.Incidentally, the solvents used in Comparative Examples 1 to 3 and 5 are actually used as edge bead removers.
표 1Table 1
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본 발명의 엣지비드 리무버는, 레지스트에 대한 용해속도가 높고 독성이 극히 낮으며, 생분해성이 있기 때문에 자연계에 축적되지 않아 환경보전에 바람직하다.The edge bead remover of the present invention has high dissolution rate to resist, extremely low toxicity, and biodegradability, and therefore is not accumulated in nature and thus is preferable for environmental conservation.
또한, 상기 엣지비드 리무버는 적당한 휘발성을 가져 양호한 건조성을 가지면서 인화점이 비교적 높고, 불쾌한 냄새도 거의 없기 때문에 작업성이나 안전성이 높은 이점이 있다.In addition, since the edge bead remover has a moderate volatility and has good drying properties, a flash point is relatively high, and there is almost no unpleasant smell, so there is an advantage in that workability and safety are high.
Claims (10)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11-372831 | 1999-12-28 | ||
JP37283299A JP2001188359A (en) | 1999-12-28 | 1999-12-28 | Edge bead remover |
JP37283199A JP2001188358A (en) | 1999-12-28 | 1999-12-28 | Edge bead remover |
JP11-372833 | 1999-12-28 | ||
JP11-372832 | 1999-12-28 | ||
JP37283399A JP2001188360A (en) | 1999-12-28 | 1999-12-28 | Edge bead remover |
Publications (2)
Publication Number | Publication Date |
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KR20010057590A KR20010057590A (en) | 2001-07-04 |
KR100733650B1 true KR100733650B1 (en) | 2007-06-28 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020000082464A KR100733650B1 (en) | 1999-12-28 | 2000-12-27 | Edge bead remover |
Country Status (3)
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KR (1) | KR100733650B1 (en) |
SG (1) | SG84619A1 (en) |
TW (1) | TW527528B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107239006A (en) * | 2016-03-28 | 2017-10-10 | 东友精细化工有限公司 | Anticorrosive additive stripping liquid controlling composition, flat board and its manufacture method and display device |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7433024B2 (en) | 2006-02-27 | 2008-10-07 | Prime Sense Ltd. | Range mapping using speckle decorrelation |
CN101957994B (en) | 2006-03-14 | 2014-03-19 | 普莱姆传感有限公司 | Depth-varying light fields for three dimensional sensing |
US8150142B2 (en) | 2007-04-02 | 2012-04-03 | Prime Sense Ltd. | Depth mapping using projected patterns |
KR102465602B1 (en) * | 2018-08-31 | 2022-11-11 | 주식회사 이엔에프테크놀로지 | Thinner composition |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06340895A (en) * | 1993-04-08 | 1994-12-13 | Nitto Chem Ind Co Ltd | Flux-cleaning agent |
JPH08231990A (en) * | 1995-02-27 | 1996-09-10 | Nitto Chem Ind Co Ltd | Detergent for wax and cleaning method |
JPH0925469A (en) * | 1995-07-07 | 1997-01-28 | Nagoya Yuka Kk | Thermosetting resin composition, curing method, woody material and molded article |
JPH10183191A (en) * | 1996-02-16 | 1998-07-14 | Nitto Chem Ind Co Ltd | Cleaning of remains attached on industrial apparatus |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61232091A (en) * | 1985-04-09 | 1986-10-16 | Sony Corp | Flux for soldering |
US4806458A (en) * | 1985-10-28 | 1989-02-21 | Hoechst Celanese Corporation | Composition containing a mixture of hexa-alkyl disilazane and propylene glycol alkyl ether and/or propylene glycol alkyl ether acetate |
JPH06184595A (en) * | 1992-12-18 | 1994-07-05 | Nitto Chem Ind Co Ltd | Detergent for resist removing step |
JP3248780B2 (en) * | 1993-06-28 | 2002-01-21 | 東京応化工業株式会社 | Solvent for removing and cleaning resist and method for producing base material for producing electronic parts using this solvent |
US5814433A (en) * | 1996-05-17 | 1998-09-29 | Clariant Finance (Bvi) Limited | Use of mixtures of ethyl lactate and N-methyl pyrollidone as an edge bead remover for photoresists |
-
2000
- 2000-12-05 SG SG200007139A patent/SG84619A1/en unknown
- 2000-12-26 TW TW089127836A patent/TW527528B/en not_active IP Right Cessation
- 2000-12-27 KR KR1020000082464A patent/KR100733650B1/en active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06340895A (en) * | 1993-04-08 | 1994-12-13 | Nitto Chem Ind Co Ltd | Flux-cleaning agent |
JPH08231990A (en) * | 1995-02-27 | 1996-09-10 | Nitto Chem Ind Co Ltd | Detergent for wax and cleaning method |
JPH0925469A (en) * | 1995-07-07 | 1997-01-28 | Nagoya Yuka Kk | Thermosetting resin composition, curing method, woody material and molded article |
JPH10183191A (en) * | 1996-02-16 | 1998-07-14 | Nitto Chem Ind Co Ltd | Cleaning of remains attached on industrial apparatus |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107239006A (en) * | 2016-03-28 | 2017-10-10 | 东友精细化工有限公司 | Anticorrosive additive stripping liquid controlling composition, flat board and its manufacture method and display device |
CN107239006B (en) * | 2016-03-28 | 2020-09-01 | 东友精细化工有限公司 | Resist stripping liquid composition, flat plate, method for manufacturing flat plate, and display device |
Also Published As
Publication number | Publication date |
---|---|
TW527528B (en) | 2003-04-11 |
SG84619A1 (en) | 2001-11-20 |
KR20010057590A (en) | 2001-07-04 |
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