KR100733547B1 - 조명기에서의 광의 각 분포를 필드 위치 함수로서변경함으로써 리소그래피 장치의 선 폭 제어를 개선하는시스템 및 방법 - Google Patents

조명기에서의 광의 각 분포를 필드 위치 함수로서변경함으로써 리소그래피 장치의 선 폭 제어를 개선하는시스템 및 방법 Download PDF

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KR100733547B1
KR100733547B1 KR1020030025335A KR20030025335A KR100733547B1 KR 100733547 B1 KR100733547 B1 KR 100733547B1 KR 1020030025335 A KR1020030025335 A KR 1020030025335A KR 20030025335 A KR20030025335 A KR 20030025335A KR 100733547 B1 KR100733547 B1 KR 100733547B1
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opening
electromagnetic energy
shape
illumination
conversion element
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KR20030084658A (ko
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트사고에네스제임스지.
코스톤스코트디.
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에이에스엠엘 유에스, 인크.
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020030025335A 2002-04-23 2003-04-22 조명기에서의 광의 각 분포를 필드 위치 함수로서변경함으로써 리소그래피 장치의 선 폭 제어를 개선하는시스템 및 방법 Expired - Fee Related KR100733547B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/127,505 US6888615B2 (en) 2002-04-23 2002-04-23 System and method for improving linewidth control in a lithography device by varying the angular distribution of light in an illuminator as a function of field position
US10/127,505 2002-04-23

Publications (2)

Publication Number Publication Date
KR20030084658A KR20030084658A (ko) 2003-11-01
KR100733547B1 true KR100733547B1 (ko) 2007-06-28

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020030025335A Expired - Fee Related KR100733547B1 (ko) 2002-04-23 2003-04-22 조명기에서의 광의 각 분포를 필드 위치 함수로서변경함으로써 리소그래피 장치의 선 폭 제어를 개선하는시스템 및 방법

Country Status (7)

Country Link
US (1) US6888615B2 (enExample)
EP (1) EP1357430A3 (enExample)
JP (1) JP2003338459A (enExample)
KR (1) KR100733547B1 (enExample)
CN (1) CN1288505C (enExample)
SG (1) SG105575A1 (enExample)
TW (1) TWI278725B (enExample)

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* Cited by examiner, † Cited by third party
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US6842223B2 (en) 2003-04-11 2005-01-11 Nikon Precision Inc. Enhanced illuminator for use in photolithographic systems
US7292315B2 (en) * 2003-12-19 2007-11-06 Asml Masktools B.V. Optimized polarization illumination
US7206652B2 (en) * 2004-08-20 2007-04-17 International Business Machines Corporation Method and system for intelligent automated reticle management
CN100353508C (zh) * 2004-12-08 2007-12-05 上海华虹Nec电子有限公司 一种精确控制铝线宽的方法
EP1866700A1 (en) 2005-03-15 2007-12-19 Carl Zeiss SMT AG Projection exposure method and projection exposure system therefor
US7525645B2 (en) * 2005-06-29 2009-04-28 Samsung Electronics Co., Ltd. Exposure apparatus and method, and mask stage therefor
KR100780863B1 (ko) 2005-06-29 2007-11-29 삼성전자주식회사 노광 장치 및 방법, 그리고 이에 사용되는 마스크 스테이지
US7934172B2 (en) 2005-08-08 2011-04-26 Micronic Laser Systems Ab SLM lithography: printing to below K1=.30 without previous OPC processing
WO2007018464A2 (en) * 2005-08-08 2007-02-15 Micronic Laser Systems Ab Method and apparatus for projection printing
US7382438B2 (en) * 2005-08-23 2008-06-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20070109520A1 (en) * 2005-11-17 2007-05-17 Whitney Theodore R Modular illuminator for a scanning printer
WO2008156367A1 (en) * 2007-06-21 2008-12-24 Asml Netherlands B.V. Method of loading a substrate on a substrate table, device manufacturing method, computer program, data carrier and apparatus
US10761430B2 (en) * 2018-09-13 2020-09-01 Applied Materials, Inc. Method to enhance the resolution of maskless lithography while maintaining a high image contrast

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JPH11312639A (ja) * 1998-01-30 1999-11-09 Canon Inc 照明光学装置及び投影露光装置
KR20010085644A (ko) * 2000-02-29 2001-09-07 시마무라 기로 노광방법, 농도필터의 제조방법 및 노광장치
KR20020016496A (ko) * 2000-08-25 2002-03-04 다니구찌 이찌로오, 기타오카 다카시 반도체 장치의 패턴 형성 방법, 포토마스크의 패턴 설계방법, 포토마스크의 제조 방법 및 포토마스크

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JPS6461716A (en) 1987-08-31 1989-03-08 Canon Kk Illuminator
JPH05217855A (ja) 1992-02-01 1993-08-27 Nikon Corp 露光用照明装置
JP3278896B2 (ja) 1992-03-31 2002-04-30 キヤノン株式会社 照明装置及びそれを用いた投影露光装置
US5329336A (en) 1992-07-06 1994-07-12 Nikon Corporation Exposure method and apparatus
JP2917704B2 (ja) 1992-10-01 1999-07-12 日本電気株式会社 露光装置
US5724122A (en) * 1995-05-24 1998-03-03 Svg Lithography Systems, Inc. Illumination system having spatially separate vertical and horizontal image planes for use in photolithography
US5631721A (en) * 1995-05-24 1997-05-20 Svg Lithography Systems, Inc. Hybrid illumination system for use in photolithography
US6628370B1 (en) * 1996-11-25 2003-09-30 Mccullough Andrew W. Illumination system with spatially controllable partial coherence compensating for line width variances in a photolithographic system
US6259513B1 (en) * 1996-11-25 2001-07-10 Svg Lithography Systems, Inc. Illumination system with spatially controllable partial coherence
US5896188A (en) * 1996-11-25 1999-04-20 Svg Lithography Systems, Inc. Reduction of pattern noise in scanning lithographic system illuminators
US6013401A (en) * 1997-03-31 2000-01-11 Svg Lithography Systems, Inc. Method of controlling illumination field to reduce line width variation
US5966202A (en) 1997-03-31 1999-10-12 Svg Lithography Systems, Inc. Adjustable slit
DE69931690T2 (de) * 1998-04-08 2007-06-14 Asml Netherlands B.V. Lithographischer Apparat
US6072852A (en) 1998-06-09 2000-06-06 The Regents Of The University Of California High numerical aperture projection system for extreme ultraviolet projection lithography
AU3754800A (en) * 1999-03-17 2000-10-04 Rochester Institute Of Technology Mofification of a projection imaging system with a non-circular aperture and a method thereof
JP4545874B2 (ja) * 2000-04-03 2010-09-15 キヤノン株式会社 照明光学系、および該照明光学系を備えた露光装置と該露光装置によるデバイスの製造方法
JP2002043214A (ja) 2000-07-26 2002-02-08 Toshiba Corp 走査型露光方法
US6573975B2 (en) 2001-04-04 2003-06-03 Pradeep K. Govil DUV scanner linewidth control by mask error factor compensation
US6784976B2 (en) * 2002-04-23 2004-08-31 Asml Holding N.V. System and method for improving line width control in a lithography device using an illumination system having pre-numerical aperture control

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11312639A (ja) * 1998-01-30 1999-11-09 Canon Inc 照明光学装置及び投影露光装置
KR20010085644A (ko) * 2000-02-29 2001-09-07 시마무라 기로 노광방법, 농도필터의 제조방법 및 노광장치
KR20020016496A (ko) * 2000-08-25 2002-03-04 다니구찌 이찌로오, 기타오카 다카시 반도체 장치의 패턴 형성 방법, 포토마스크의 패턴 설계방법, 포토마스크의 제조 방법 및 포토마스크

Also Published As

Publication number Publication date
CN1453644A (zh) 2003-11-05
US6888615B2 (en) 2005-05-03
EP1357430A2 (en) 2003-10-29
KR20030084658A (ko) 2003-11-01
TWI278725B (en) 2007-04-11
TW200306466A (en) 2003-11-16
SG105575A1 (en) 2004-08-27
CN1288505C (zh) 2006-12-06
US20030197842A1 (en) 2003-10-23
JP2003338459A (ja) 2003-11-28
EP1357430A3 (en) 2005-09-07

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